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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Having Insulated Electrode (e.g., Mosfet, Mos Diode) > Insulated Gate Capacitor Or Insulated Gate Transistor Combined With Capacitor (e.g., Dynamic Memory Cell) > With High Dielectric Constant Insulator (e.g., Ta 2 O 5 ) With High Dielectric Constant Insulator (e.g., Ta 2 O 5 )With High Dielectric Constant Insulator (e.g., Ta 2 O 5 ) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.11/01/07 - 20070252187 - Top electrode barrier for on-chip die de-coupling capacitor and method of making same An improvement in the method of fabricating on chip decoupling capacitors which help prevent L di/dt voltage droop on the power grid for high surge current conditions is disclosed. The inclusion of a hybrid metal/metal nitride top electrode/barrier provides for a low cost and higher performance option to strapping decoupling ... 10/04/07 - 20070228442 - Thin film capacitor, method for forming same, and computer readable recording medium In a thin film capacitor, reducing a leak current by suppressing concentration of an electric filed. Forming a zirconium oxide layer (26A) on a lower electrode (22) made of a conductive material. Forming a buffer layer (28) made of an amorphous material on the first zirconium oxide layer (26A). Forming ... 08/30/07 - 20070200160 - Semiconductor device and method of fabricating the same A semiconductor device includes a semiconductor substrate comprising an active area where a first conductive channel is formed, a gate electrode formed on the active area formed on the semiconductor substrate and a gate dielectric layer interposed between the active area and the gate electrode. The semiconductor device further includes ... 08/09/07 - 20070181931 - Hafnium tantalum oxide dielectrics A dielectric layer containing a hafnium tantalum oxide film and a method of fabricating such a dielectric layer produce a dielectric layer for use in a variety of electronic devices. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing a hafnium tantalum oxide film ... 06/28/07 - 20070145453 - Dielectric layer for electronic devices A dielectric layer for electronic devices is disclosed herein. The dielectric layer comprises inorganic nanoparticles dispersed in a polymer selected from the group consisting of polysiloxane, polysilsesquioxane, and mixtures thereof. The layer improves the carrier mobility and current on/off ratio of an electronic device incorporating it, especially a thin film ... 06/07/07 - 20070126045 - Memory devices including dielectric thin film and method of manufacturing the same A memory device including a dielectric thin film having a plurality of dielectric layers and a method of manufacturing the same are provided. The memory device includes: a bottom electrode; at least one dielectric thin film disposed on the bottom electrode and having a plurality of dielectric layers with different ... 05/03/07 - 20070096192 - Capacitor of semiconductor device and method of fabricating the same Disclosed are a capacitor of a semiconductor device and a method of fabricating the same. The capacitor includes a capacitor top electrode, a capacitor bottom electrode aligned with a bottom surface and three lateral sides of the capacitor top electrode, and a capacitor insulating layer between the capacitor top electrode ... 04/26/07 - 20070090441 - Titanium aluminum oxide films A dielectric layer containing an insulating metal oxide film having multiple metal components and a method of fabricating such a dielectric layer produce a reliable dielectric layer for use in a variety of electronic devices. Embodiments include a titanium aluminum oxide film structured as one or more monolayers. Embodiments also ... 04/26/07 - 20070090440 - Lanthanum aluminum oxynitride dielectric films Electronic apparatus and methods of forming the electronic apparatus include a lanthanum aluminum oxynitride film on a substrate for use in a variety of electronic systems. The lanthanum aluminum oxynitride film may be structured as one or more monolayers. ... 04/26/07 - 20070090439 - Hafnium titanium oxide films Embodiments of a dielectric layer containing a hafnium titanium oxide film structured as one or more monolayers include the dielectric layer disposed in an integrated circuit. Embodiments of methods of fabricating such a dielectric layer provide a dielectric layer for use in a variety of electronic devices. ... 04/19/07 - 20070085127 - Semiconductor device and method of manufacturing the same A fin type MOSFET and a method of manufacturing the fin type MOSFET are disclosed. Gate structures in the fin type MOSFET are formed by a damascene process without a photolithography process. Impurities used to form a channel region are selectively implanted into portions of a semiconductor substrate adjacent to ... 03/29/07 - 20070069272 - Semiconductor device comprising a plurality of semiconductor constructs A semiconductor device includes a first semiconductor construct provided on a base plate and having a semiconductor substrate and external connection electrodes. An insulating layer is provided on the base plate around the first semiconductor construct. An upper layer insulating film is provided on the first semiconductor construct and insulating ... 03/15/07 - 20070057306 - Semiconductor storage device and method for manufacturing the same A semiconductor storage device is manufactured by the following steps. A cylindrical hole is formed in an interlayer insulating film. Then, a multilayer conductive layer including a first sublayer and a second sublayer is formed over the entire surface of the insulating interlayer including the internal surface of the hole. ... 03/08/07 - 20070051999 - Ferroelectric capacitor having three-dimensional structure, nonvolatile memory device having the same and method of fabricating the same A ferroelectric capacitor having a three-dimensional structure, a nonvolatile memory device having the same, and a method of fabricating the same are provided. The ferroelectric capacitor may include a trench-type lower electrode, at least one layer formed around the lower electrode, a ferroelectric layer (PZT layer) formed on the lower ... 03/08/07 - 20070051998 - Semiconductor memory device with dielectric structure and method for fabricating the same A semiconductor memory device with a dielectric structure and a method for fabricating the same are provided. The dielectric structure includes: a first dielectric layer having a dielectric constant of approximately 25 or higher; a second dielectric layer including a material having a crystallization rate lower than the first dielectric ... 02/22/07 - 20070040207 - Electronic devices including dielectric layers with different densities of titanium Methods of forming an electronic device include providing a fist electrode, providing a dielectric oxide layer on the first electrode, and providing a second electrode on the dielectric oxide layer so that the dielectric oxide layer is between the first and second electrodes. More particularly, a first portion of the ... 02/22/07 - 20070040206 - High dielectric material composed of sintered body of rare earth sulfide A high-dielectric material which is especially useful as a material for a high-capacitance capacitor and which has a high dielectric constant is provided. The high-dielectric material is composed of a sintered body of a rare-earth sulfide, the high-dielectric material having a crystal structure of tetragonal β type, a chemical composition ... 12/28/06 - 20060289921 - Method of manufacturing a capacitor for semiconductor device A capacitor for use in a semiconductor device, a method of fabricating the capacitor, and an electronic device adopting the capacitor, wherein the capacitor includes upper and lower electrodes, each formed of a platinum group metal; a thin dielectric layer disposed between the upper and lower electrodes; and a buffer ... 12/28/06 - 20060289920 - Composite gate structure in an integrated circuit An integrated circuit having composite gate structures and a method of forming the same are provided. The integrated circuit includes a first MOS device, a second MOS device and a third MOS device. The gate stack of the first MOS device includes a high-k gate dielectric and a first metal ... 12/21/06 - 20060284233 - Acceptor doped barium titanate based thin film capacitors on metal foils and methods of making thereof The present invention is directed to a dielectric thin film composition comprising: (1) one or more barium/titanium-containing additives selected from (a) barium titanate, (b) any composition that can form barium titanate during firing, and (c) mixtures thereof; dissolved in (2) organic medium; and wherein said thin film composition is doped ... 11/30/06 - 20060267066 - High dielectric constant transition metal oxide materials A transition metal oxide dielectric material is doped with a non-metal in order to enhance the electrical properties of the metal oxide. In a preferred embodiment, a transition metal oxide is deposited over a bottom electrode and implanted with a dopant. In a preferred embodiment, the metal oxide is hafnium ... 11/23/06 - 20060261397 - Lanthanide oxide/hafnium oxide dielectric layers Dielectric layers are provided configured with a layer of lanthanide oxide and a layer of hafnium oxide, where the layer of hafnium oxide is structured as one of more monolayers of hafnium oxide. In an embodiment, a dielectric layer may be arranged as a nanolaminate of hafnium oxide and a ... 11/16/06 - 20060255392 - Transistor including metal-insulator transition material and method of manufacturing the same A transistor including a metal-insulation transition material and a method of manufacturing the same. The transistor including a metal-insulator transition material may include a substrate, a insulation layer formed on the substrate, a source region and a drain region separately formed from each other on the insulation layer, a tunneling ... 11/09/06 - 20060249778 - Constructions comprising hafnium oxide The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and orientation over the substrate. Subsequently, second reaction conditions are utilized to ... 11/02/06 - 20060244034 - Low-dielectric films, and manufacturion method thereof, and electronic component using it While a fine porous diamond particle film has been known as a high heat resistant and low dielectric constant film and also has high mechanical strength and heat conductivity, and is expected as an insulating film for multi-layered wirings in semiconductor integrated circuit devices, it is insufficient in current-voltage characteristic ... 10/26/06 - 20060237764 - Lanthanide doped tiox dielectric films A dielectric film containing lanthanide doped TiOx and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The lanthanide doped TiOx dielectric layer is arranged as a layered structure of one or more monolayers of the ... 10/19/06 - 20060231882 - Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and cmos device applications A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate insulator includes room temperature deposited high-K materials so as to allow said thin film transistor to operate at ... 10/05/06 - 20060220092 - Titanium oxide extended gate field effect transistor A titanium oxide extended gate field effect transistor (EGFET) device and fabricating method thereof. Titanium oxide is formed on an EGFET by sputtering, coating a detection membrane therefor. Current-voltage relationships at different pH values are also measured via a current measuring system. Sensitivity parameter of the titanium oxide EGFET is ... 10/05/06 - 20060220091 - Semiconductor device and method for fabricating the same A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least one common type of atoms for allowing the ... 10/05/06 - 20060220090 - Semiconductor device with a high-k gate dielectric and a metal gate electrode A semiconductor device is described. That semiconductor device comprises a high-k gate dielectric layer that is formed over a channel that is positioned within a substrate, and a metal gate electrode that is formed on the high-k gate dielectric layer. The high-k gate dielectric layer has off-state leakage characteristics that ... 09/28/06 - 20060214213 - Thin-film capacitor element and semiconductor device A thin-film capacitor element has at least a lower electrode, a ferroelectric layer, and an upper electrode. The upper electrode adds a compressive stress of 10 MPa to 5 GPa to the ferroelectric layer. The upper electrode includes at least one oxide selected from PtOx, IrOx, RuOx, SrRuOy, and LaNiOy. ... 08/17/06 - 20060180844 - Integrated circuitry and method of forming a capacitor The invention comprises integrated circuitry and to methods of forming capacitors. In one implementation, integrated circuitry includes a capacitor having a first capacitor electrode, a second capacitor electrode and a high K capacitor dielectric region received therebetween. The high K capacitor dielectric region has a high K substantially amorphous material ... 07/13/06 - 20060151823 - High dielectric constant materials A capacitor (10) includes a substrate (12) and two metal electrodes (14, 18). A dielectric layer (16) is formed between the electrodes. Preferably, the dielectric layer has a dielectric constant greater than 25 and an adequate conduction band offset with silicon. Exemplary embodiments proposed use the following material systems: HfuTivTawOxNy, ... 06/29/06 - 20060138518 - Semiconductor device with silicon-germanium gate electrode and method for manufacturing thereof A semiconductor includes a gate electrode having a SiGe film on a a gate dielectric film that is on a silicon substrate. The gate dielectric film includes an underlying interfacial layer on the substrate and a high-k dielectric film having higher dielectric constant than the underlying interfacial layer. The gate ... 06/15/06 - 20060124987 - Capacitor of semiconductor device and method for manufacturing the same Provided is a capacitor of a semiconductor device. The capacitor includes a capacitor lower electrode disposed on a semiconductor substrate. A first dielectric layer comprising aluminum oxide (Al2O3) is disposed on the capacitor lower electrode. A second dielectric layer comprising a material having a higher dielectric constant than that of ... 06/15/06 - 20060124986 - Cmos image sensor and manufacturing method thereof A gate insulation layer with a high dielectric constant for a CMOS image sensor formed by a damascene process. A silicide layer on a gate electrode layer is formed in both a pixel region and a peripheral circuit region, and a silicide layer on a source/drain region is formed only ... 05/25/06 - 20060108625 - Methods of programming non-volatile memory devices including transition metal oxide layer as data storage material layer and devices so operated A method of programming a non-volatile memory device including a transition metal oxide layer includes applying a first electric pulse to the transition metal oxide layer for a first period to reduce a resistance of the transition metal oxide layer and applying a second electric pulse to the transition metal ... 05/25/06 - 20060108624 - Semiconductor device A semiconductor device comprises a capacitor including a bottom electrode, a top electrode, and a dielectric film, the bottom electrode comprising a first conductive film containing iridium, a second conductive film provided between the dielectric film and the first conductive film and formed of a noble metal film, a third ... 05/11/06 - 20060097305 - Capacitor with zirconium oxide and method for fabricating the same A capacitor with zirconium oxide and a method for fabricating the same are provided. The method includes: forming a storage node; forming a multi-layered dielectric structure on the storage node, the multi-layered dielectric structure including a zirconium oxide (ZrO2) layer and an aluminum oxide (Al2O3) layer; and forming a plate ... 04/20/06 - 20060081905 - Dielectric multilayer of microelectronic device and method of fabricating the same A dielectric multilayer suitable for improving a performance of a microelectronic device and a method of fabricating the dielectric multilayer are provided. The dielectric multilayer of the microelectronic device comprises a composite layer which is formed of oxides of two or more different elements and in which a laminar structure ... 03/23/06 - 20060060909 - Memory cell Disclosed herein is a DRAM memory cell featuring a reduced size, increased retention time, and compatibility with standard logic manufacturing processes, making it well-suited for use as embedded DRAM. The memory cell disclosed herein includes a pass-gate transistor and a storage region. The transistor includes a gate and a drain. ... 03/16/06 - 20060054961 - Semiconductor device and method for manufacturing the same A semiconductor device includes a silicon substrate; an insulation layer formed on the silicon substrate, the insulation layer containing an oxide of an element of at least one kind selected from at least Hf, Zr, Ti and Ta; an electrode formed on the insulation layer; and a metal oxide layer ... 03/02/06 - 20060043453 - Semiconductor devices The invention includes semiconductor devices. In one implementation, semiconductor device includes a first conductive material. A first layer of a dielectric material is over the first conductive material. A second layer of the dielectric material is on the first layer. A second conductive material is over the second layer of ... 03/02/06 - 20060043452 - Ferroelectric memory and its manufacturing method A ferroelectric memory includes a base member, a dielectric layer formed above the base member, a contact hole that penetrates the dielectric layer, a plug formed inside the contact hole, a barrier layer formed above the plug, and including a first portion with a portion formed in the contact hole ... 01/26/06 - 20060017091 - Method and apparatus for nonvolatile memory Method and apparatus on charges injection using piezo-ballistic-charges injection mechanism are provided for nonvolatile memory device. The device has a strain source, an injection filter, a tunneling gate, a ballistic gate, a charge storage region, a source, and a drain with a channel defined between the source and drain. The ... 01/12/06 - 20060006450 - Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen The invention comprises capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen. In one embodiment, a capacitor includes first and second conductive electrodes having a high k capacitor dielectric region positioned therebetween. The high k capacitor dielectric region includes a layer of ... 01/12/06 - 20060006449 - Semiconductor integrated circuit devices having a hybrid dielectric layer and methods of fabricating the same In semiconductor integrated circuit devices having a hybrid dielectric layer and methods of fabricating the same, the hybrid dielectric layer includes a lower dielectric layer, an intermediate dielectric layer and an upper dielectric layer which are sequentially stacked. The lower dielectric layer contains hafnium (Hf) or zirconium (Zr). The upper ... 01/05/06 - 20060001072 - Methods of forming a gated device This invention includes gated field effect devices, and methods of forming gated field effect devices. In one implementation, a gated field effect device includes a pair of source/drain regions having a channel region therebetween. A gate is received proximate the channel region between the source/drain regions. The gate has a ... 01/05/06 - 20060001071 - Forming high-k dielectric layers on smooth substrates A buffer layer and a high-k metal oxide dielectric may be formed over a smooth silicon substrate. The substrate smoothness may reduce column growth of the high-k metal oxide gate dielectric. The surface of the substrate may be saturated with hydroxyl terminations prior to deposition. ... 12/22/05 - 20050280067 - Atomic layer deposited zirconium titanium oxide films Dielectric layers having an atomic layer deposited oxide containing titanium and zirconium and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Pulsing a titanium-containing precursor onto a substrate, and pulsing a zirconium-containing precursor to form ... 12/22/05 - 20050280066 - Capacitor in semiconductor device having dual dielectric film structure and method for fabricating the same A capacitor in a semiconductor device having a dual dielectric film structure and a fabrication method therefor are disclosed. The capacitor comprises: a lower electrode formed on a semiconductor substrate, a dielectric film of a dual dielectric film structure composed of an Si3N4 chloride-free thin film and a Ta2O5 thin ... 12/22/05 - 20050280065 - Semiconductor storage device, manufacturing method therefor and portable electronic equipment A semiconductor storage device has a single gate electrode formed on a semiconductor substrate through a gate insulation film. First and second memory function bodies formed on both sides of the gate electrode. A P-type channel region is formed in a surface of the substrate on the side of the ... 11/17/05 - 20050253181 - Semiconductor device The semiconductor device 100 comprises a silicon substrate 102, an N-type MOSFET 118 including a first high dielectric constant film 111 and a polycrystalline silicon film 114 formed on the silicon substrate 102, and a P-type MOSFET 120 including a second high dielectric constant film 112 and a polycrystalline silicon ... 10/13/05 - 20050224857 - Mos transistor In P-channel MOS transistor comprising a gate insulating film composed of a high dielectric constant material and the gate electrode composed of polycrystalline silicon, a technology for preventing Fermi level pinning and providing a stable reduction of the threshold voltage is provided. The MOS transistor functions as a buried channel ... 10/06/05 - 20050218443 - Ferroelectric memory element and its manufacturing method A ferroelectric capacitor is covered with a hydrogen barrier film, and an inner wall of a contact hole provided above an upper electrode of the ferroelectric capacitor is also covered with a hydrogen barrier film, thereby preventing hydrogen from infiltrating in the ferroelectric capacitor through a contact hole. ... 09/29/05 - 20050212031 - Semiconductor device and method for manufacturing same A semiconductor device is provided which has a capacitor insulating film made up of zirconium aliminate being an amorphous film obtained by having crystalline dielectric contain amorphous aluminum oxide and having its composition of AlXZr(1-X)OY (0.05≦x≦0.3), hereby being capable of preventing, in a process of forming a capacitor of MIM ... 09/29/05 - 20050212030 - Semiconductor capacitor and mosfet fitted therewith In accordance with the invention the semiconductor capacitor includes a first capacitor electrode 1, a second capacitor electrode 3 and a capacitor dielectric 5 which is arranged between the two capacitor electrodes and which includes praseodymium oxide. It is distinguished in that the second capacitor electrode 3 includes praseodymium silicide. ... 09/22/05 - 20050205920 - Sonos type memory device A SONOS type memory includes a semiconductor substrate, first and second impurity regions in the semiconductor substrate doped with impurity ions of a predetermined conductivity, separated a predetermined distance from each other, a channel region between the first and second impurity regions, and a data storage type stack on the ... 09/15/05 - 20050199935 - Mixed noble metal/noble metal oxide bottom electrode for enhanced pgo c-axis nucleation and growth A method is provided for forming a single-phase c-axis PGO film overlying a Pt metal electrode. Although the method is summarized in the context of a Pt bottom electrode, it has a broader application to other noble metals. The method comprises: forming a bottom electrode mixture of Pt and Pt3O4; ... 08/04/05 - 20050167727 - Capacitors, methods of forming capacitors, and methods of forming capacitor dielectric layers A method of forming a capacitor includes forming first and second capacitor electrodes over a substrate. A capacitor dielectric region is formed intermediate the first and second capacitor electrodes, and includes forming a silicon nitride comprising layer over the first capacitor electrode. A silicon oxide comprising layer is formed over ... 08/04/05 - 20050167726 - Novel high-k dielectric materials and processes for manufacturing them High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides. The resulting film is useful as a capacitative cell ... 07/28/05 - 20050161728 - Molecular memory and method for making same A molecular memory including a substrate made of silicon; a set of condensers, each condenser including two conductive layers constituting armatures of the condensers and between which is placed a dielectric layer; and a connector to provide electric contacts with external circuits, wherein the dielectric layer comprises at least partially ... ### FreshPatents.com Support |