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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Having Insulated Electrode (e.g., Mosfet, Mos Diode) > Insulated Gate Capacitor Or Insulated Gate Transistor Combined With Capacitor (e.g., Dynamic Memory Cell) > Stacked Capacitor Stacked CapacitorStacked Capacitor patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/03/08 - 20080001201 - Storage capacitor and method of manufacturing a storage capacitor An integrated circuit including a storage capacitor suitable for use in a DRAM cell, as well as to a method of manufacturing such a storage capacitor is disclosed. The storage capacitor is formed at least partially above a semiconductor substrate surface. The invention also includes a memory array employing the ... 11/08/07 - 20070257294 - Dram (dynamic random access memory) cells A DRAM cell with a self-aligned gradient P-well and a method for forming the same. The DRAM cell includes (a) a semiconductor substrate; (b) an electrically conducting region including a first portion, a second portion, and a third portion; (c) a first doped semiconductor region wrapping around the first portion, ... 10/11/07 - 20070235789 - Hybrid electrical contact Techniques for manufacturing an electronic device. In certain embodiments, a substrate includes a lower patterned layer that has a target conductor. A hybrid-vertical contact may be disposed directly on the target conductor. The hybrid vertical contact may include a lower-vertical contact directly on the target conductor and an upper-vertical contact ... 09/27/07 - 20070221978 - Semiconductor device The semiconductor device comprises a substrate, a semiconductor element mounted on the substrate, a heat diffusion member mounted on the substrate while covering the semiconductor element, and a resin seal for covering the semiconductor element. An integrated capacitor is mounted on the heat diffusion member in an opposed relationship to ... 09/20/07 - 20070215928 - Fringe capacitor using bootstrapped non-metal layer Capacitors configured in a switched-capacitor circuit on a semiconductor device may comprise very accurately matched, high capacitance density metal-to-metal capacitors, using top-plate-to-bottom-plate fringe-capacitance for obtaining the desired capacitance values. A polysilicon plate may be inserted below the bottom metal layer as a shield, and bootstrapped to the top plate of ... 09/13/07 - 20070210367 - Storage capacitor and method for producing such a storage capacitor A storage capacitor includes a first electrode layer, second electrode layer and a dielectric interlayer arranged between the first electrode layer and the second electrode layer. The dielectric interlayer contains a high-k dielectric and at least one silicon-containing component. ... 09/06/07 - 20070205452 - Method for forming a metal oxide film A method for forming a capacitor insulation film includes the step of depositing a monoatomic film made of a metal by supplying a metal source including the metal and no oxygen, and depositing a metal oxide film including the metal by using a CVD technique. The method provides the metal ... 08/16/07 - 20070187741 - Thin film transistor substrate, method of manufacturing the same and display apparatus having the same In a thin film transistor substrate, a method of manufacturing the same, and a display apparatus having the same, a thin film transistor, a gate member, and a storage member are formed on an insulating substrate. The gate member has a gate line and a gate electrode electrically connected to ... 08/16/07 - 20070187740 - Capacitance cell, semiconductor device, and capacitance element arranging method A capacitance cell 21 is wired while using adjacent wiring layers Ma and Mb as a pair of electrode layers T1 and T2 orthogonally to opposed lateral end faces out of lateral end faces X1, X2, Y1, and Y2 that section the cell in a plane direction. Contact surfaces of ... 08/09/07 - 20070181929 - Semiconductor constructions, memory cells, dram arrays, electronic systems; methods of forming semiconductor constructions; and methods of forming dram arrays The invention includes a semiconductor construction including rows of contact plugs, and rows of parallel bottom plates. The plug pitch is approximately double the plate pitch. The invention includes a method of forming a semiconductor construction. A plurality of conductive layers is formed over the substrate, the plurality of layers ... 08/09/07 - 20070181928 - Capacitor and manufacturing method thereof A capacitor having a high quality and a manufacturing method of the same are provided. A capacitor has a lower electrode formed on an oxide film, a dielectric layer formed on the lower electrode, an upper electrode formed so as to face the lower electrode with the dielectric layer between, ... 07/26/07 - 20070170486 - Semiconductor device having self-aligned contact and method of fabricating the same A semiconductor device includes a conductive pattern disposed on a substrate, a first interlayer dielectric layer disposed on the substrate and the conductive pattern, a first dummy pattern disposed on the first interlayer dielectric layer and partially overlapping the conductive pattern, a second interlayer dielectric layer disposed on the first ... 07/12/07 - 20070158729 - Thin film transistor array panel and method of manufacture A TFT array panel for a display has a gate insulating layer with substantially the same dielectric constant as the passivation layer and may be thicker than the passivation layer, while the storage capacitor includes a pixel electrode and a storage electrode overlapping each other along with the passivation layer ... 07/05/07 - 20070152256 - Method for fabricating a metal insulator-metal (mim) capacitor having capacitor dielectric layer formed by atomic layer deposition (ald) A semiconductor device having a logic section and a memory section that are formed on the same semiconductor chip, including: a first transistor formed in the logic section and having gate electrodes and source and drain regions, and a second transistor formed in the memory section having gate electrodes, source ... 06/28/07 - 20070145452 - Integrated circuit devices including a capacitor Integrated circuit devices include an integrated circuit substrate and a conductive lower electrode layer of a capacitor on the integrated circuit substrate. A dielectric layer is on the lower electrode layer and a conductive upper electrode layer of the capacitor is on the dielectric layer. A first intermetal dielectric layer ... 06/21/07 - 20070138532 - Semiconductor device with a line and method of fabrication thereof A semiconductor device includes an interlayer insulation film, an underlying line provided in the interlayer insulation film, a liner film overlying the interlayer insulation film, an interlayer insulation film overlying the liner film. The underlying line has a lower hole and the liner film and the interlayer insulation film have ... 06/07/07 - 20070126044 - Circuit device having capacitor and field effect transistor, and display apparatus therewith In a circuit device having a field effect transistor and a capacitor, the capacitor is connected to at least one of a gate electrode, a source electrode and a drain electrode of a field effect transistor, the field effect transistor has a channel comprised of a first nano-wire, and the ... 05/24/07 - 20070114590 - Semiconductor device and method of manufacturing the same There are contained first and second conductive plugs formed in first insulating layer, an island-like oxygen-barrier metal layer for covering the first conductive plug, an oxidation-preventing insulating layer formed on the first insulating layer to cover side surfaces of the oxygen-barrier metal layer, a capacitor having a lower electrode formed ... 05/24/07 - 20070114589 - Semiconductor integrated circuit device and method for fabricating the same A semiconductor integrated circuit device includes: a semiconductor layer having a principal surface on which a source electrode, a drain electrode and a gate electrode are formed and having a first through hole; an insulating film formed in contact with the semiconductor layer and having a second through hole; a ... 05/03/07 - 20070096190 - Interconnect line selectively isolated from an underlying contact plug The present invention relates to selectively electrically connecting an electrical interconnect line, such as a bit line of a memory cell, with an associated contact stud and electrically isolating the interconnect line from other partially underlying contact studs for other electrical features, such as capacitor bottom electrodes. The interconnect line ... 05/03/07 - 20070096189 - Semiconductor device In order to supply a semiconductor device having high-reliability, there are used a first capacitor electrode, a capacitor insulating film formed in contact with the first capacitor electrode and mainly composed of titanium oxide, and a second capacitor electrode formed in contact with the capacitor insulating film, and there is ... 05/03/07 - 20070096188 - Method of manufacturing semiconductor device Method of forming a high-reliability contact plug which prevents a short circuit between the plug and a bit line by applying a material having an etching rate ratio of 100 or more with respect to a silicon nitride film which forms a self-aligned contact plug. After the formation of a ... 04/19/07 - 20070085126 - Circuit board structure and dielectric layer structure thereof A circuit board structure and a dielectric layer structure thereof are proposed. The dielectric layer structure has a dielectric layer and a plurality of bonding particles dispersed in the dielectric layer. The bonding particle is a metal powder particle coated with an insulating film. There is an additional circuit structure ... 04/12/07 - 20070080388 - Capacitor assembly A capacitor assembly includes a semiconductor substrate having an interlayer insulation film on a first main surface of the semiconductor substrate, and a conductive barrier layer formed on the interlayer insulation film. The capacitor assembly also includes a contact plug electrically connected to the conductive barrier layer through the interlayer ... 03/29/07 - 20070069270 - Top electrode in a strongly oxidizing environment An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit. The CIC sandwich further comprises a first insulating layer deposited over the first conducting layer in ... 03/01/07 - 20070045702 - Insulation layer to improve capacitor breakdown voltage A metal-insulator-metal (MIM) capacitor and a method for forming the same are provided. The MIM capacitor includes an insulator on a bottom metal plate, a top metal plate on the insulator, a dielectric layer on the top metal plate and on at least sidewalls of the top metal plate and ... 02/22/07 - 20070040205 - Stud capacitor device and fabrication method The present teachings relate to a method of forming a container capacitor structure on a substrate. In one embodiment, the method comprises etching a recess in the substrate, depositing a first conductive layer on the substrate so as to overlie the substrate and the recess, depositing a filler layer so ... 01/25/07 - 20070018225 - Integrated stacked capacitor and method of fabricating same An integrated stacked capacitor comprises a first capacitor film (46) of polycrystalline silicide (poly), a second capacitor film (48) and a first dielectric (26) sandwiched between the first capacitor film (46) and second capacitor film (48). A second dielectric (34) and a third capacitor film (50) are provided. The second ... 01/25/07 - 20070018224 - Devices and methods for preventing capacitor leakage Devices and methods for preventing capacitor leakage caused by sharp tip. The formation of sharp tip is avoided by a thicker bottom electrode which fully fills a micro-trench that induces formation of the sharp tip. Alternatively, formation of the sharp tip can be avoided by recessing the contact plug to ... 01/18/07 - 20070012986 - Phase-change memory device including nanowires and method of manufacturing the same a phase-change random access memory (PRAM) device including a plurality of nanowires and a method of manufacturing the same include: a lower structure including a plurality of contact plugs; the nanowires extending into the contact plugs from surfaces defining a respective terminal end of the contact plugs; and a phase-change ... 01/11/07 - 20070007572 - Capacitor fabrication methods and capacitor constructions A capacitor fabrication method may include atomic layer depositing a conductive barrier layer to oxygen diffusion over the first electrode. A method may instead include chemisorbing a layer of a first precursor at least one monolayer thick over the first electrode and chemisorbing a layer of a second precursor at ... 01/11/07 - 20070007571 - Semiconductor device with a buried gate and method of forming the same An embodiment of the invention provides a semiconductor fabrication method. The method comprises forming an isolation region between a first and a second region in a substrate, forming a recess in the substrate surface, and lining the recess with a uniform oxide. Embodiments further include doping a channel region under ... 01/04/07 - 20070001209 - Method of forming a storage electrode of a semiconductor device In a storage electrode of a semiconductor device, and a method of forming the same, the storage electrode includes an outer cylinder including a first outer cylindrical portion having a first outer diameter, and a second outer cylindrical portion that is formed on the first outer cylindrical portion and having ... 01/04/07 - 20070001208 - Dram having carbon stack capacitor A DRAM stack capacitor and a fabrication method thereof is disclosed. The DRAM stack capacitor is formed with a first capacitor electrode comprising a conductive carbon layer, a capacitor dielectric layer and a second capacitor electrode. ... 12/21/06 - 20060284232 - Semiconductor device having a capacitor and a fabrication method thereof In a semiconductor device having a capacitor and a method of fabricating the same, the semiconductor device comprises a semiconductor substrate having a memory cell array region and a peripheral region, a plurality of capacitors in the memory cell array region each having a storage electrode, a dielectric layer on ... 12/21/06 - 20060284231 - Dielectric memory and method for manufacturing the same A method for manufacturing a dielectric memory including the steps of: forming a second insulating film which covers wires formed above first contact plugs connected to impurity diffusion layers; forming a third insulating film on the second insulating film; forming a first hydrogen barrier film on the third insulating film; ... 12/21/06 - 20060284230 - Vertical organic field effect transistor A vertical organic field effect transistor that includes an active cell and a capacitor that share a common source electrode. The active cell includes a semiconductor layer that is sandwiched between a drain electrode and the common source electrode. The capacitor includes a dielectric layer that is sandwiched between a ... 11/30/06 - 20060267065 - Semiconductor device using a conductive film and method of manufacturing the same A semiconductor device has a capacitive element including a first conductive film formed on the bottom and wall surfaces of an opening formed in an insulating film on a substrate, a dielectric film formed on the first conductive film, and a second conductive film formed on the dielectric film. The ... 11/23/06 - 20060261396 - Multiple stacked capacitors formed within an opening with thick capacitor dielectric For forming stacked capacitors, an opening is formed through at least one semiconductor material. A lower electrode material is patterned within the opening to form a plurality of lower electrodes within the opening. The stacked capacitors are formed with the lower electrodes within the opening by depositing a capacitor dielectric ... 11/23/06 - 20060261395 - Semiconductor fabrication using a collar In one embodiment, a method includes selectively depositing a collar material between a number of memory containers. The collar material along a side of a first memory container of the number of memory containers is in contact with the collar material along a side of a second memory container. An ... 11/09/06 - 20060249775 - Semiconductor device with contact and method of fabricating the same A semiconductor device having a contact includes a semiconductor substrate having a core region, a first interlayer insulating layer disposed on the semiconductor substrate, a first interconnect line disposed on the first interlayer insulating layer, the first interconnect line extending in a first direction, and a conductive stud covering a ... 11/02/06 - 20060244033 - Capacitor, semiconductor device having the same, and method of manufacturing the semiconductor device A semiconductor device with a stack type capacitor having a lower electrode formed of an aluminum-doped metal, and a manufacturing method thereof are provided. The semiconductor device includes: a semiconductor substrate having a gate structure and an active region; an interlayer dielectric film formed on the active region; a lower ... 11/02/06 - 20060244032 - Semiconductor process for removing defects due to edge chips of a semiconductor wafer and semiconductor device fabricated thereby A method for removing defects due to edge chips of a semiconductor wafer is disclosed. This method includes forming a molding layer over a semiconductor wafer. The molding layer is patterned to form a plurality of storage node holes, where the plurality of storage node holes include at least one ... 11/02/06 - 20060244031 - Memory cell structure and semiconductor memory device A memory cell structure comprises a first memory capacitor that is arranged in a first local area, and includes a first lower electrode, a first upper electrode, and a first dielectric oxide film interposed between the first lower electrode and the first upper electrode; a second memory capacitor that is ... 10/26/06 - 20060237763 - Electronic systems The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the first semiconductor layer. Subsequently, a third semiconductor layer is formed over the second semiconductor layer, and semiconductor-containing seeds are formed over ... 10/26/06 - 20060237762 - Semiconductor device and method of manufacturing the semiconductor device A semiconductor device has a stabilizing member that encloses an upper portion of a storage electrode to improve structural stability. A dielectric layer and a plate electrode are successively formed on the storage electrode including a stabilizing member. Since the stabilizing member includes a protruding portion to support the storage ... 10/26/06 - 20060237761 - Non-volatile memory, fabrication method thereof and operation method thereof A method of fabrication a non-volatile memory is provided. A stacked structure is formed on a substrate, the stacked structure including a gate dielectric layer and a control gate. Then, a first dielectric layer, a second dielectric layer and a third dielectric layer are respectively formed on the top and ... 10/19/06 - 20060231880 - Semiconductor device and method of fabricating the same According to an aspect of the invention, there is provided a semiconductor device including a semiconductor substrate, and a capacitor formed above the semiconductor substrate by sandwiching a dielectric film between a lower electrode and upper electrode, wherein the upper electrode has a stacked structure including a first MOx type ... 09/21/06 - 20060208299 - Semiconductor device having stacked decoupling capacitors A semiconductor device having transistors formed on different layers of a stack structure includes a stacked capacitor cluster, wherein a stacked capacitor of the stacked capacitor cluster includes an insulation layer of a transistor of the semiconductor device, and at least a first conduction layer and a second conduction layer ... 09/14/06 - 20060202250 - Storage capacitor, array of storage capacitors and memory cell array A storage capacitor, suitable for use in a DRAM cell, is at least partially formed above a substrate surface and includes: a storage electrode at least partially formed above the substrate surface, a dielectric layer formed adjacent the storage electrode, and a counter electrode formed adjacent the dielectric layer, the ... 09/07/06 - 20060197135 - Semiconductor device having a cylindrical capacitor element A semiconductor device includes a cylindrical capacitor having a bottom electrode, a capacitor insulator film and a top electrode. The top electrode includes first and second electrode portions insulated from each other and opposing the inner surface and outer surface, respectively, of the bottom electrode. The second electrode portion is ... 09/07/06 - 20060197134 - Method of manufacturing a metal-insulator-metal capacitor using an etchback process The present invention provides a method for manufacturing a metal-insulator-metal (MIM) capacitor, a method for manufacturing an integrated circuit having a metal-insulator-metal (MIM) capacitor, and an integrated circuit having a metal-insulator-metal (MIM) capacitor. The method for manufacturing the metal-insulator-metal (MIM) capacitor, among other steps and without limitation, includes providing a ... 08/24/06 - 20060186451 - Memory device for storing electric charge, and method for fabricating it The present device relates to memory devices for storing electric charge having memory cells and transistors arranged spatially next to them, and relates in particular to memory devices having memory cells with a high capacitance. In the memory cells which form a memory device to which the invention relates, there ... 08/24/06 - 20060186450 - Integrated high voltage capacitor and a method of manufacture therefor The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over ... 08/03/06 - 20060170025 - Planarization of metal container structures A conductive material is provided in an opening formed in an insulative material. The process involves first forming a conductive material over at least a portion of the opening and over at least a portion of the insulative material which is outside of the opening. Next, a metal-containing fill material ... 07/27/06 - 20060163640 - Method of fabricating metal-insulator-metal capacitor and metal-insulator-metal capacitor manufactured by the method In a method of fabricating a metal-insulator-metal (MIM) capacitor and a metal-insulator-metal (MIM) capacitor fabricated according to the method, the method comprises: forming an insulating-layer pattern on a semiconductor substrate, the insulating-layer pattern having a plurality of openings that respectively define areas where capacitor cells are to be formed; forming ... 07/27/06 - 20060163639 - Semiconductor memory device and method for fabricating the same A semiconductor memory device includes a memory cell and a dummy cell. The amount of leakage current per unit area in a capacitor in the dummy cell is larger than that in a capacitor in the memory cell. ... 07/27/06 - 20060163638 - Semiconductor device and method for fabricating the same A semiconductor device includes a first insulating film formed on a semiconductor substrate; a second insulating film formed on the first insulating film and having a recess corresponding to a capacitor region; a lower electrode formed in the recess; a capacitor dielectric film formed on the lower electrode; and an ... 07/20/06 - 20060157771 - Integrated circuit memory devices and capacitors having carbon nanotube electrodes and methods of forming same An integrated circuit capacitor includes first and second electrodes and at least one dielectric layer extending between the first and second electrodes. The first electrode includes at least one carbon nanotube. The capacitor further includes an electrically conductive catalyst material. This catalyst material may be selected from the group consisting ... 07/06/06 - 20060145233 - Method of fabricating a semiconductor device capacitor having a dielectric barrier layer and a semiconductor device capacitor having the same A method of forming a capacitor of a semiconductor device is provided. In the method, a capacitor lower electrode is deposited on a semiconductor substrate and then a dielectric layer is deposited on the lower electrode. A dielectric barrier layer is deposited on an upper part of the dielectric layer. ... 07/06/06 - 20060145232 - Method for manufacturing semiconductor device including mim capacitor A semiconductor device including a metal-insulator-metal (MIM) capacitor is manufactured such that a via for connecting upper and lower conductive layers is formed through an insulating interlayer after a silicon nitride layer is deposited as a thick layer on the insulating interlayer. This protects an edge of a MIM structure ... 07/06/06 - 20060145231 - Distributed capacitor array A capacitor structure in an integrated circuit includes a capacitor region defined within the boundaries thereof with an active circuit layer formed on the surface of the semiconductor substrate. A planarization layer is disposed over the active circuit layer and electrically isolated therefrom in at least the capacitor region. A ... 06/29/06 - 20060138516 - Method of forming dram device having capacitor and dram device so formed In a method of forming a DRAM device having a capacitor and a DRAM device so formed, an interlayer dielectric having at least one layer is formed on a semiconductor substrate. The interlayer dielectric layer and a predetermined portion of the semiconductor substrate are sequentially etched to form a storage ... 06/29/06 - 20060138515 - Semiconductor device and fabricating method of the same Openings are formed by lithography and subsequent dry etching at the portions of a first protective film which correspond to connecting holes of second plugs which will be described later, namely at the portions thereof which align with first plugs, wherein the openings have a diameter greater than that of ... 06/29/06 - 20060138514 - Capacitor for a semiconductor device and manufacturing method thereof Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; a yttrium oxynitride film formed over the aluminum oxynitride film and having ... 06/15/06 - 20060124984 - Method for fabricating capacitor of semiconductor device The present invention relates to a method for fabricating a capacitor of a semiconductor device. The semiconductor device includes: a bit line structure formed on a substrate and including stacked layers of a bit line, a hard mask and a spacer, the spacer formed along a profile containing the bit ... 06/15/06 - 20060124983 - Semiconductor device and method for fabricating the same A semiconductor device has contact plugs each for electrically connecting a capacitor element to the source/drain region of a transistor, conductive layers formed on the contact plugs and made of titanium nitride which is a nitride only of a refractory metal, and polycrystalline conductive oxygen barrier layers each composed of ... 06/01/06 - 20060113581 - Semiconductor memory device A semiconductor memory device having a memory cell array in which plural memory transistors and plural memory call capacitors, which are components of memory cells, are arranged, comprises a first wiring layer formed on the memory cell array, and a second wiring layer formed above the first wiring layer, wherein ... 06/01/06 - 20060113580 - Capacitor for a semiconductor device and method of forming the same In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surface ... 05/18/06 - 20060102947 - Integration of silicon carbide into dram cell to improve retention characteristics A DRAM memory cell and a method of making a DRAM memory cell are provided. The DRAM memory cell includes a semiconductor substrate, including a trench formed therein and a buried plate region, at least a first doped region and a second doped region provided on a sidewall of the ... 04/27/06 - 20060086964 - Capacitor device and method of manufacturing the same A method of manufacturing a capacitor device of the present invention, includes the steps of, forming an insulating layer on a substrate, forming a recess portion in the insulating layer by an imprinting process, forming a lower electrode by filling a metal layer in the recess portion in the insulating ... 04/27/06 - 20060086963 - Stacked capacitor and method for preparing the same The present invention discloses a stacked capacitor having interdigital electrodes and method for preparing the same. The stacked capacitor comprises a first interdigital electrode, a second interdigital electrode and a dielectric material sandwiched between the first interdigital electrode and the second interdigital electrode. The first and the second interdigital electrodes ... 04/27/06 - 20060086962 - Stacked capacitor and method for preparing the same The present invention discloses a stacked capacitor having interdigital electrodes and method for preparing the same. The stacked capacitor comprises a first interdigital electrode, a second interdigital electrode and a dielectric material sandwiched between the first interdigital electrode and the second interdigital electrode. The first and the second interdigital electrodes ... 04/06/06 - 20060071263 - Dielectric thin film, dielectric thin film device, and method of production thereof To provide a dielectric thin with a high dielectric constant, a low leakage current, and stable physical properties and electrical properties and to provide a thin film capacitor or other thin film dielectric device with a high capacitance and high reliability and a method of production of the same, a ... 03/23/06 - 20060060908 - Semiconductor device and method for manufacturing the same A method for manufacturing a semiconductor device includes the steps of forming a conductive layer over a first insulating layer formed on a substrate, and over a plurality of contact plugs formed in the first insulating layer; forming a plurality of capacitor element lower electrodes by patterning the conductive layer; ... 03/16/06 - 20060054960 - Semiconductor device and method for fabricating the same A semiconductor device has a MIM capacitor including a first insulating film formed on a semiconductor substrate, a lower electrode composed of a first metal film formed on the first insulating film, a capacitor insulating film formed on the lower electrode, and an upper electrode composed of a second metal ... 03/09/06 - 20060049446 - Method for manufacturing a semiconductor device A semiconductor device includes a semiconductor substrate, a lower conductive layer formed over the semiconductor substrate, an intermediate insulating layer formed over the lower conductive layer and an upper conductive layer formed over the intermediate insulating layer. The upper conductive layer crosses the lower conductive layer. The semiconductor device also ... 02/23/06 - 20060038217 - Dielectric memory device and method for fabricating the same A method for fabricating a dielectric memory device is carried out in the following manner. A first lower electrode is formed above a substrate, and then a first insulating film is formed on the first lower electrode. Through the first insulating film, a hole is formed which reaches an upper ... 02/09/06 - 20060027852 - Bitline of semiconductor device having stud type capping layer and method for fabricating the same A semiconductor device with a bitline structure has a stud type capping layer. A method of fabricating the same achieves sufficient process margins and reduces parasitic capacitance. The device may include an insulating film formed on a semiconductor substrate and having a bitline contact and a groove-shaped bitline pattern, a ... 02/02/06 - 20060022250 - Semiconductor device which includes a capacitor and an interconnection film coupled to each other and a manufacturing method thereof A semiconductor device includes a semiconductor substrate and a capacitor which is disposed on a principal surface of the semiconductor substrate. The capacitor includes a lower electrode film disposed on the principal surface of the semiconductor substrate, a dielectric film disposed on the lower electrode and an upper electrode film ... 02/02/06 - 20060022249 - Memory device and method for fabricating the same Disclosed are a memory device and a method for fabricating the same. The memory device includes: a substrate provided with a trench; a bit line contact junction formed beneath the trench; a plurality of storage node contact junctions formed outside the trench; and a plurality of gate structures each being ... 01/26/06 - 20060017089 - Method and apparatus for providing capacitor feedthrough A capacitor feedthrough assembly with a cavity, comprising a capacitor stack, including one or more substantially flat anode layers and one or more substantially flat cathode layers in a case with a cover, the case having a first opening sized for passage of the capacitor stack and a second opening ... 01/19/06 - 20060011964 - Semiconductor device and method for fabricating the same In a semiconductor device of the present invention, capacitors are formed on a part of an interlayer dielectric (26) located in a memory cell area, and another interlayer dielectric (39) is formed on a part of still another interlayer dielectric (30) located in a peripheral circuit area AreaB. Furthermore, a ... 01/19/06 - 20060011963 - Method and apparatus for interconnecting electrodes with partial titanium coating The present subject matter includes a capacitor stack having a plurality of anode layers, and a plurality of cathodic metal substrates partially coated in a titanium coating. Cathode portions lacking titanium enable weld interconnections which are substantially free of titanium, improving capacitor properties. In some embodiments, anodes are interspersed among ... 01/05/06 - 20060001069 - Composition for forming dielectric layer, mim capacitor and process for its production To provide a composition for forming a dielectric layer excellent in dielectric constant and withstand voltage properties, a MIM capacitor and a process for its production. A composition for forming a dielectric layer, which comprises fine particles of perovskite type dielectric crystal, glass frit, and a hydrolysable silicon compound or ... 01/05/06 - 20060001068 - Multi-layer capacitor using dielectric layers having differing compositions The present disclosure describes an embodiment of an apparatus comprising a first dielectric layer having a first variation of capacitance with temperature, a second dielectric layer having a second variation of capacitance with temperature, the second variation of capacitance with temperature being different than the first variation of capacitance with ... 12/15/05 - 20050275007 - Capacitor and method for manufacturing the same The capacitor of the present invention comprises: an opening part formed in an interlayer insulating film on a semiconductor substrate; a lower electrode made of a polycrystalline silicon with an uneven surface part; a chemical oxide film formed on the uneven surface part of the lower electrode; an silicon oxynitride ... 12/01/05 - 20050263814 - Bottom electrode of capacitor of semiconductor device and method of forming the same To form a bottom electrode of a capacitor of a semiconductor device, a first insulation layer pattern having a first contact hole is formed on a substrate, and a contact plug for the bottom electrode is formed in the contact hole. A second insulation layer is formed on the first ... 11/24/05 - 20050258466 - Capacitor and light emitting display using the same A capacitor comprising a polysilicon layer doped with impurities to be conductive, a first dielectric layer formed on the polysilicon layer, a first conductive layer formed on the first dielectric layer, a second dielectric layer formed on the first conductive layer, and a second conductive layer formed on the first ... 11/10/05 - 20050247968 - Integrated circuit devices including a capacitor Integrated circuit devices include an integrated circuit substrate and a conductive lower electrode layer of a capacitor on the integrated circuit substrate. A dielectric layer is on the lower electrode layer and a conductive upper electrode layer of the capacitor is on the dielectric layer. A first intermetal dielectric layer ... 11/03/05 - 20050242386 - Memory cell and method of fabricating the same A memory cell and a method of fabricating the same. A first conductive layer on a substrate is provided and a first type doped semiconductor layer is then formed on the first conductive layer. The first type doped semiconductor layer and the first conductive layer are patterned into a first ... 10/27/05 - 20050236658 - Semiconductor device and production method therefor A semiconductor device includes a lower electrode provided over a semiconductor substrate, a capacitor film provided on a surface of the lower electrode and having substantially the same pattern as the lower electrode, and an upper electrode provided on the capacitor film. The upper electrode is disposed in a predetermined ... 10/20/05 - 20050230734 - Field effect transistors having trench-based gate electrodes and methods of forming same Embodiments of the invention include dynamic random access memory (DRAM) devices that utilize field effect transistors with trench-based gate electrodes. In these devices, a semiconductor substrate is provided having an isolation trench therein. This isolation trench is formed in a first portion of the semiconductor substrate. An electrically insulating liner ... 10/06/05 - 20050218442 - Semiconductor device and method of manufacturing the same A semiconductor device includes a substrate including a semiconductor and a trench, and an electrically rewritable semiconductor memory cell on the substrate, the semiconductor memory cell comprising a charge storage layer including an upper surface and a lower surface, an area of the lower surface being smaller than an area ... 09/29/05 - 20050212029 - Semiconductor device and method for manufacturing same A semiconductor device is provided which has a capacitor insulating film made up of zirconium aliminate being an amorphous film obtained by having crystalline dielectric contain amorphous aluminum oxide and having its composition of AlXZr(1-X)OY (0.05≦X≦0.3), hereby being capable of preventing, in a process of forming a capacitor of MIM ... 09/29/05 - 20050212028 - Semiconductor device There is disclosed a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate, and including a bottom electrode, a dielectric film formed on the bottom electrode, and a top electrode formed on the dielectric film and having a plurality of hole patterns. ... 09/22/05 - 20050205919 - Ferro-electric memory device and method of manufacturing the same A ferro-electric memory device includes a first ferro-electric capacitor which is selectively formed on a first insulating film and has a first lower electrode, a first ferro-electric film, and a first upper electrode, a first hydrogen barrier film which has first to third portions, the first portion being formed on ... 09/15/05 - 20050199934 - Electronic component having an integrated passive electronic component and associated production method An electronic component and method of production thereof is presented. The electronic component includes a first insulation layer, an upper metal layer on the first insulation layer, an electrically conductive structure integrated into the first insulation layer and formed as a capacitor with a first metal strip sequence, and a ... 09/15/05 - 20050199933 - Capacitor and method for fabricating the same, and semiconductor device and method for fabricating the same The semiconductor device comprises a device isolation region 14 formed in a semiconductor substrate 10, a lower electrode 16 formed in a device region 12 defined by the device isolation region and formed of an impurity diffused layer, a dielectric film 18 of a thermal oxide film formed on the ... 09/01/05 - 20050189578 - Flat panel display with high capacitance and method of manufacturing the same A flat panel display device having a high capacitance and a high aperture ratio. A thin film transistor and a capacitor are formed on an insulating substrate. The thin film transistor includes a semiconductor layer, a gate electrode and source and drain electrodes. The capacitor has first and second capacitor ... 08/25/05 - 20050184328 - Semiconductor device and its manufacturing method In a semiconductor device in which a thin film containing a metal oxide is formed on a semiconductor element, the thin film is an aggregate of crystal particles formed of the metal oxide, and the crystal particles are bonded to each other at a part of its surface. ... 08/18/05 - 20050179077 - Monolithic integrated soi circuit with capacitor A monolithic integrated circuit of SOI construction that is provided with an SOI substrate comprising an insulating layer, and a silicon semiconductor layer having monocrystalline domains, and with a capacitor that comprises a bottom electrode that is formed from a monocrystalline domain of the silicon semiconductor layer and a layer ... 08/04/05 - 20050167723 - Capacitor structures The invention includes a method of forming a capacitor structure. A first electrical node is formed, and a layer of metallic aluminum is formed over the first electrical node. Subsequently, an entirety of the metallic aluminum within the layer is transformed into one or more of AlN, AlON, and AlO, ... 07/28/05 - 20050161726 - Capacitor of a semiconductor device, memory device including the same and method of munufacturing the same In a capacitor, a memory device including the capacitor, and a method of manufacturing the capacitor, the capacitor includes a lower electrode comprising a single layer of one selected from the group including a noble metal alloy and an oxide thereof, a dielectric film formed on the lower electrode, and ... 07/28/05 - 20050161725 - Semiconductor component comprising an integrated latticed capacitance structure An insulating layer which is produced on a semiconductor substrate has a capacitance structure produced in it. The capacitance structure has at least one first substructure which has a metal latticed region and electrically conductive regions which are arranged in the cutouts in the metal latticed region, the metal latticed ... 07/21/05 - 20050156221 - Semiconductor device and method of manufacturing same A semiconductor device comprises a semiconductor substrate, and a capacitor provided above the semiconductor substrate, the capacitor comprises a lower electrode containing metal, a first dielectric film provided above the lower electrode and containing tantalum oxide or niobium oxide, a top surface of the first dielectric film including a projecting ... 07/07/05 - 20050145918 - Methods of forming capacitors and electronic devices A method of forming a capacitor includes forming a first conductive capacitor electrode layer over a substrate. The first electrode layer has an outer surface comprising a noble metal in at least one of elemental and alloy forms. A gaseous mixture comprising a metallorganic deposition precursor and an organic solvent ... 07/07/05 - 20050145917 - Semiconductor memory device and method of producing the same A semiconductor memory device has access transistors with a gate and a pair of impurity diffusion layers formed on a semiconductor substrate and memory capacitors with a storage node electrode and a cell plate electrode. The electrodes are connected to each other via a capacitive insulating layer made of a ... 06/30/05 - 20050139891 - Iii-nitride device with improved layout geometry A III-nitride power device for controlling high currents as an interdigitated electrode pattern for increasing device rating while decreasing device dimensions. Fingers of the interdigitated electrode pattern have tips with smaller dimensions than the remainder of the fingers. The tapered finger design balances current flow in the electrode fingers to ... 06/16/05 - 20050127425 - Semiconductor device and method for fabricating the same A semiconductor device includes a lower electrode having a bend in its cross-section, a capacitor dielectric film of a ferroelectric deposited on the top face of the lower electrode and an upper electrode deposited on the top face of the capacitor dielectric film. The upper electrode is deposited by chemical ... 06/02/05 - 20050116277 - Capacitor assembly and method for producing the same A capacitor assembly has a substrate, a first conductive auxiliary layer on the substrate, a capacitor dielectric, a second conductive auxiliary layer and a contact electrode. Thereby the first conductive auxiliary layer is connected to the capacitor dielectric within a first boundary area and the second conductive auxiliary layer is ... 06/02/05 - 20050116276 - Metal-insulator-metal (mim) capacitor and fabrication method for making the same A metal-insulator-metal (MIM) capacitor includes a first metal plate; a first capacitor dielectric layer disposed on the first metal plate and a second metal plate stacked on the first capacitor dielectric layer. The first metal plate, the first capacitor dielectric layer, and the second metal plate constitute a lower capacitor. ... ### FreshPatents.com Support |