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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Having Insulated Electrode (e.g., Mosfet, Mos Diode) > With Ferroelectric Material Layer With Ferroelectric Material LayerWith Ferroelectric Material Layer patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/24/08 - 20080017902 - Semiconductor device and method of manufacturing the same A semiconductor device comprises an inter-layer insulation film 30 formed on a semiconductor substrate 10, and a dielectric capacitor including a lower electrode 38 formed on the inter-layer insulation film 30 including a conduction film 36 of a noble metal or noble metal oxide, a dielectric film 42 formed on ... 01/17/08 - 20080012054 - Epitaxial oxide film, piezoelectric film, piezoelectric film element, liquid discharge head using the piezoelectric film element, and liquid discharge apparatus Provided are a piezoelectric film, a piezoelectric film element, a liquid discharge head using the piezoelectric film element, and a liquid discharge apparatus. A piezoelectric film element that can be suitably used for a discharge pressure-generating element of a liquid discharge head is obtained by using an epitaxial oxide film ... 01/10/08 - 20080006861 - Semiconductor device and manufacturing method thereof A semiconductor device is provided with a semiconductor substrate, a ferroelectric capacitor formed above the semiconductor substrate, and a film formed on the back face of the semiconductor substrate. In a method for manufacturing a semiconductor device, a ferroelectric capacitor is formed above a semiconductor substrate, and then the back ... 01/10/08 - 20080006860 - Magnetoresistive effect element and magnetic memory device Write characteristics and read characteristics can be improved at the same time by applying novel materials to ferromagnetic layers. In a magneto resistive effect element having a pair of ferromagnetic layers being opposed to each other through an intermediate layer to cause a current to flow in the direction perpendicular ... 01/03/08 - 20080001194 - Semiconductor nonvolatile storage element and method of fabricating the same To provide a semiconductor nonvolatile storage device capable of applying distributed voltage efficiently to a ferroelectric capacitor in a semiconductor nonvolatile storage device having an MFMIS structure without enlarging a memory cell area and a method of fabricating the same, a ferroelectric nonvolatile storage element is constructed by a structure ... 12/27/07 - 20070296007 - Shared ground contact isolation structure for high-density magneto-resistive ram A buried ground contact that connects the ground electrodes of transistors in adjacent memory cells that are separated by an isolation region is described. In some embodiments, the buried ground contact passes beneath the isolation region that separates cells to electrically connect the drain regions of transistors in adjacent cells. ... 12/13/07 - 20070284637 - Ferroelectric memory and its manufacturing method To securely prevent hydrogen from entering a ferroelectric layer of a ferroelectric memory. A first hydrogen barrier layer 5 is formed on the lower side of ferroelectric capacitors 7. Upper surfaces and side surfaces of the ferroelectric capacitors 7 are covered by a second hydrogen barrier layer. All upper electrodes ... 11/29/07 - 20070272960 - Ferroelectric memory transistor with conductive oxide gate structure The present invention discloses a ferroelectric transistor having a conductive oxide in the place of the gate dielectric. The conductive oxide gate ferroelectric transistor can have a three-layer metal/ferroelectric/metal or a two-layer metal/ferroelectric on top of the conductive oxide gate. By replacing the gate dielectric with a conductive oxide, the ... 11/08/07 - 20070257288 - Alignment mark for semiconductor device, and semiconductor device An alignment mark for a semiconductor device is provided. The alignment mark defines a plane pattern and includes a conductive layer embedded in a recessed section provided in an insulation layer, and an oxidation barrier layer provided on the conductive layer, wherein an area occupancy ratio of the recessed section ... 11/08/07 - 20070257287 - Assemblies comprising magnetic elements and magnetic barrier or shielding at least partially around the magnetic elements The invention includes a method of forming a semiconductor construction, such as an MRAM construction. A block is formed over a semiconductor substrate. First and second layers are formed over the block, and over a region of the substrate proximate the block. The first and second layers are removed from ... 11/01/07 - 20070252186 - Mtj read head with sidewall spacers Following CMP, a magnetic tunnel junction stack may protrude through the oxide that surrounds it, making it susceptible to possible shorting to its sidewalls. The present invention overcomes this problem by depositing silicon nitride spacers on these sidewalls prior to oxide deposition and CMP. So, even though the stack may ... 11/01/07 - 20070252185 - Integrated circuit and manufacturing method thereof An integrated circuit and a manufacturing method thereof are provided. A chip size can be reduced by forming a memory device in which a ferroelectric capacitor region is laminated on a DRAM. The integrated circuit includes a cell array region having a capacitor, a peripheral circuit region, and a ferroelectric ... 10/25/07 - 20070246761 - Electrical lapping guides made from tunneling magnetoresistive (tmr) material Tunneling magnetoresistive (TMR) electrical lapping guides (ELG) are disclosed for use in wafer fabrication of magnetic sensing devices, such as magnetic recording heads using TMR read elements. A TMR ELG includes a TMR stack comprising a first conductive layer, a barrier layer, and a second conductive layer of TMR material. ... 10/18/07 - 20070241379 - Compositions for thin-film capacitance device, high-dielectric constant insulating film, thin-film capacitance device and thin-film multilayer capacitor A thin-film capacitor (2) in which a lower electrode (6), a dielectric thin-film (8), and an upper electrode (10) are formed in order on a substrate (4). The dielectric thin-film (8) is made of a composition for thin-film capacitance devices. The composition includes a bismuth layer-structured compound whose c-axis is ... 10/18/07 - 20070241378 - Method for forming bit line contacts and bit lines during the formation of a semiconductor device, and devices and systems including the bit lines and bit line contacts A method for forming a semiconductor device comprises forming first and second bit lines at different levels. Forming the bit lines at different levels increases processing latitude, particularly the spacing between the bit lines which, with conventional processes, may strain photolithographic limits. A semiconductor device formed using the method, and ... 10/11/07 - 20070235782 - Ferroelectric memory and its manufacturing method To securely prevent hydrogen from entering a ferroelectric layer of a ferroelectric memory. A first hydrogen barrier layer 5 is formed on the lower side of ferroelectric capacitors 7. Upper surfaces and side surfaces of the ferroelectric capacitors 7 are covered by a second hydrogen barrier layer. All upper electrodes ... 10/04/07 - 20070228432 - Semiconductor element, semiconductor storage device using the same, data writing method thereof, data reading method thereof, and manufacturing method of those The invention relates to a semiconductor element used for a nonvolatile semiconductor storage device or the like, a semiconductor storage device using the same, a data writing method thereof, a data reading method thereof and a manufacturing method of those, and has an object to provide a semiconductor element in ... 09/27/07 - 20070221975 - Bipolar switching pcmo capacitor A multi-layer PrxCa1-xMnO3 (PCMO) thin film capacitor and associated deposition method are provided for forming a bipolar switching thin film. The method comprises: forming a bottom electrode; depositing a nanocrystalline PCMO layer; depositing a polycrystalline PCMO layer; forming a multi-layer PCMO film with bipolar switching properties; and forming top electrode ... 09/27/07 - 20070221974 - Method for forming ferroelectric memory capacitor A ferroelectric memory capacitor is formed by forming a barrier layer, a first metal layer, a ferroelectric layer, a second metal layer, and a hard mask layer, on dielectric layer (70). Using the patterned hard mask layer (255), the layers are etched to form an etched barrier layer (205), and ... 09/13/07 - 20070210362 - Non-volatile memory and the fabrication method A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and ... 09/06/07 - 20070205448 - Ferroelectric tunneling element and memory applications which utilize the tunneling element A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when ... 08/16/07 - 20070187735 - Method of manufacturing semiconductor device, and semiconductor device A first hydrogen barrier film and an intermediate layer are formed on an interlayer dielectric film. A ferroelectric capacitor is formed on the intermediate layer, and a second hydrogen barrier film is formed over the entire surface including on the upper surface and side surfaces of the ferroelectric capacitor and ... 08/02/07 - 20070176218 - Dual-gate non-volatile ferroelectric memory A dual-gate non-volatile memory cell includes a first dielectric layer extending over a first gate, a semiconductor region extending over the first dielectric layer, a second dielectric layer comprising tunnel oxide extending over the semiconductor region, a ferroelectric layer extending over the second dielectric layer, and a second gate extending ... 08/02/07 - 20070176217 - Ferroelectric varactors suitable for capacitive shunt switching A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode ... 07/26/07 - 20070170481 - Nonvolatile ferroelectric memory device A nonvolatile ferroelectric memory device is provided so as to control read/write operations of a nonvolatile memory cell using a channel resistance of the memory cell which is differentiated by polarity states of a ferroelectric material. In the memory device, an insulating layer is formed on a bottom word line, ... 07/26/07 - 20070170480 - Nonvolatile ferroelectric memory device A nonvolatile ferroelectric memory device is provided so as to control read/write operations of a nonvolatile memory cell using a channel resistance of the memory cell which is differentiated by polarity states of a ferroelectric material. In the memory device, an insulating layer is formed on a bottom word line, ... 07/19/07 - 20070164338 - Method of forming nano-sized mtj cell without contact hole Provided is a method of manufacturing a nano-sized MTJ cell in which a contact in the MTJ cell is formed without forming a contact hole. The method of forming the MTJ cell includes forming an MTJ layer on a substrate, forming an MTJ cell region by patterning the MTJ layer, ... 07/19/07 - 20070164337 - Flip feram cell and method to form same A method of forming an integrated ferroelectric/CMOS structure which effectively separates incompatible high temperature deposition and annealing processes is provided. The method of the present invention includes separately forming a CMOS structure and a ferroelectric delivery wafer. These separate structures are then brought into contact with each and the ferroelectric ... 07/12/07 - 20070158716 - Conductive memory stack with sidewall A conductive memory stack is provided. The memory stack includes a bottom electrode, a top electrode and a multi-resistive state element. The multi-resistive state element is sandwiched between the electrodes such that the top face of the bottom electrode is in contact with the multi-resistive state element's bottom face and ... 07/12/07 - 20070158714 - One-mask high-k metal-insulator-metal capacitor integration in copper back-end-of-line processing A MIM capacitor technique is described wherein bottom plates (electrodes) are composed of gate conductor material, and are formed in the same layer, in the same way, using the same masking and processing steps as transistor gates. The top plates (electrodes) are formed using a simple single-mask, single-damascene process. Electrical ... 07/05/07 - 20070152254 - Magnetic transistor structure A magnetic transistor includes a first magnetic section, a second magnetic section, a conductive section, a first metal terminal, and a second metal terminal. The conductive section is disposed between and is in direct contact with both the first and second magnetic section. The first metal terminal is disposed on ... 07/05/07 - 20070152253 - Ferroelectric oxide artificial lattice, method for fabricating the same and ferroelectric storage medium for ultrahigh density data storage device The present invention is related to a ferroelectric storage medium for ultrahigh density data storage device and a method for fabricating the same. A supercell having high anisotropy is formed by controlling crystal structure and symmetry of unit structure (supercell) of artificial lattice by using an ordered alignment of predetermined ... 07/05/07 - 20070152252 - Reducing aluminum dissolution in high ph solutions A method for reducing the dissolution of aluminum gate electrodes in a high pH clean chemistry comprises modifying the high pH clean chemistry to include a silanol-based chemical. The silanol-based chemical causes a protective layer to form on a top surface of the aluminum gate electrode. The protective layer substantially ... 06/28/07 - 20070145449 - Capacitor to be incorporated in wiring substrate, method for manufacturing the capacitor, and wiring substrate A wiring substrate in which a capacitor is provided, the capacitor comprising a capacitor body including a plurality of dielectric layers and internal electrode layers provided between the different dielectric layers, wherein said capacitor body has, in at least one side face of said capacitor body, recesses extending in a ... 06/28/07 - 20070145448 - Nonvolatile semiconductor memory device and method of manufacturing the same A nonvolatile semiconductor memory device includes: a first semiconductor region having first conductivity; a channel formation region in which a channel inversion layer having second conductivity is formed; a second semiconductor region having the second conductivity; a third semiconductor region having the second conductivity; a laminated insulating film formed on ... 06/21/07 - 20070138522 - Memory device A memory device including: a lower electrode; a ferroelectric layer formed above the lower electrode; a charge compensation layer formed above the ferroelectric layer and including an oxide having a composition differing from a composition of the ferroelectric layer; and upper electrodes formed above the charge compensation layer. The upper ... 06/21/07 - 20070138521 - Ferroelectric capacitor and semiconductor device A ferroelectric capacitor includes: a base substrate; a first electrode provided above the base substrate; a ferroelectric layer provided above the first electrode; a conductive film provided on the ferroelectric layer; a sacrificial layer composed of dielectric material provided above the conductive film; and a second electrode provided above the ... 06/21/07 - 20070138520 - Ferroelectric passive memory cell, device and method of manufacture thereof A first passive ferroelectric memory element comprising a first electrode system and a second electrode system, wherein said first electrode system is at least partly insulated from said second electrode system by an element system comprising at least one ferroelectric element, wherein said first electrode system is a conductive surface, ... 06/21/07 - 20070138519 - Production process for a semiconductor component with a praseodymium oxide dielectric The invention concerns a semiconductor component and an associated production process having a silicon-bearing layer, a praseodymium oxide layer and a mixed oxide layer arranged between the silicon-bearing layer and the praseodymium oxide layer and containing silicon, praseodymium and oxygen. It is possible because of the mixed oxide layer on ... 06/14/07 - 20070131994 - Ferroelectric memory and method for manufacturing ferroelectric memory A ferroelectric memory includes a ferroelectric capacitor formed from a lower electrode, an upper electrode and a ferroelectric layer interposed between the lower electrode and the upper electrode; and a metal wiring provided in an interlayer dielectric film, wherein a portion of the metal wiring that may otherwise come in ... 06/07/07 - 20070126042 - Transistor type ferroelectric memory and method of manufacturing the same A transistor type ferroelectric memory including: a substrate; a gate electrode formed above the substrate; a ferroelectric layer formed above the substrate to cover the gate electrode; a source electrode formed above the ferroelectric layer; a drain electrode formed above the ferroelectric layer and apart from the source electrode; and ... 06/07/07 - 20070126041 - Dielectric film capacitor and method of manufacturing the same A dielectric film capacitor includes a lower electrode having an opening and formed of a material including platinum, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film. The planar area of the lower ... 06/07/07 - 20070126040 - Vacuum cell thermal isolation for a phase change memory device A memory device with improved thermal isolation. The memory cell includes a first electrode element, having an upper surface; an insulator stack formed on the first electrode element, including first, second and third insulating members, all generally planar in form and having a central cavity formed therein and extending therethrough, ... 05/31/07 - 20070120164 - Film forming method and oxide thin film element The invention provides a method of forming, on a substrate, a thin film of a perovskite type oxide in which at least either of a site A and a site B is constituted of plural elements and the plural elements in at least either site include elements different in valence ... 05/17/07 - 20070108489 - Semiconductor device and method for fabricating the same The semiconductor device according to the present invention comprises: a ferroelectric capacitor 42 formed above a semiconductor substrate 10 and including a lower electrode 36, a ferroelectric film 38 formed on the lower electrode 36 and an upper electrode 40 formed on the ferroelectric film 38; a silicon oxide film ... 05/17/07 - 20070108488 - Storage node, phase change memory device and methods of operating and fabricating the same A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper ... 05/10/07 - 20070102743 - Switchable memory diode - a new memory device Systems and methodologies are provided for forming a diode component integral with a memory cell to facilitate programming arrays of memory cells created therefrom. Such a diode component can be part of a PN junction of memory cell having a passive and active layer with asymmetric semiconducting properties. Such an ... 05/10/07 - 20070102742 - Capacitor and method for fabricating the same A capacitor includes a lower electrode, a dielectric structure over the lower electrode, the dielectric structure including at least one crystallized zirconium oxide (ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer, and an upper electrode formed over the dielectric structure. A method for fabricating a capacitor includes ... 05/10/07 - 20070102741 - Thin film capacitor-embedded printed circuit board and method of manufacturing the same Disclosed herein is a printed circuit board with an embedded thin-film capacitor, and a method of manufacturing the same. Specifically, the present invention relates to a printed circuit board with an embedded thin-film capacitor, comprising a lower electrode formed on an insulating substrate; an amorphous paraelectric film formed on the ... 05/03/07 - 20070096180 - Semiconductor device and method for manufacturing the same A semiconductor device includes a semiconductor substrate, and a ferroelectric capacitor provided on the semiconductor substrate, the ferroelectric capacitor comprising a lower electrode, a first ferroelectric film provided on the lower electrode including Pb(ZrxTi1-x)O3 and having a tetragonal crystal system whose crystal direction is oriented in a <111> direction, a ... 04/26/07 - 20070090427 - Semiconductor device and method of manufacturing same A method of manufacturing a semiconductor device, comprises: forming a high dielectric gate insulating film in an nMIS formation region and a pMIS formation region of a semiconductor substrate; forming a first metal film on the high dielectric gate insulating film, the first metal film; removing the first metal film ... 04/26/07 - 20070090426 - Ferroelectric capacitor A ferroelectric capacitor includes a bottom electrode formed on a substrate, a ferroelectric material film formed on the bottom electrode and a top electrode formed on the ferroelectric material film. The ferroelectric material film is predominantly made of a compound represented by the general formula of SrxBiyTa2-zNbzO9 (wherein 0.69≦x≦0.81, 2.09≦y≦2.31 ... 04/26/07 - 20070090425 - Memory cell comprising switchable semiconductor memory element with trimmable resistance A nonvolatile memory cell comprising doped semiconductor material and a diode can store memory states by changing the resistance of the doped semiconductor material by application of a set pulse (decreasing resistance) or a reset pulse (increasing resistance.) Set pulses are of short duration and above a threshold voltage, while ... 04/19/07 - 20070085121 - Ferrite material and ceramic substrate A low-temperature firable ceramic substrate having formed in its inside a ferrite layer with a coil embedded therein is provided. The ferrite layer has a composition of 63 to 73% by mass of Fe2O3, 5 to 10% by mass of CuO, 5 to 12% by mass of NiO, and 10 ... 04/12/07 - 20070080384 - Phase change memory devices using magnetic resistance effect, methods of operating and methods of fabricating the same A phase change memory device includes a substrate, a switching element formed in the substrate and a storage node connected to the switching element. The storage node may include a lower electrode connected to the switching element, a first phase change layer formed on the lower electrode, a magnetic resistance ... 04/12/07 - 20070080383 - Semiconductor device A semiconductor device according to an embodiment of the present invention includes a semiconductor substrate; a ferroelectric capacitor arranged above the semiconductor substrate; an insulating protecting film covering a side surface of the ferroelectric capacitor; and a side wall film formed on a side surface of the ferroelectric capacitor through ... 04/12/07 - 20070080382 - Semiconductor device A silicide film is formed between a ferroelectric capacitor structure, which is formed by sandwiching a ferroelectric film between a lower electrode and an upper electrode, and a conductive plug (the conductive material constituting the plug is tungsten (W) for example). Here, an example is shown in which a base ... 04/12/07 - 20070080381 - Robust protective layer for mtj devices MTJ devices commonly degrade when subjected to the heat treatments required by subsequent further processing. This problem has been overcome by protecting the MTJ's sidewalls with a two layer laminate. The first layer is laid down under oxygen-free conditions, no attempt being made to replace any oxygen that is lost ... 04/05/07 - 20070075345 - Platinum stuffed with silicon oxide as a diffusion oxygen barrier for semiconductor devices The present invention provides techniques to fabricate high dielectric MIM storage cell capacitors. In one embodiment, this is accomplished by forming a silicon contact is then formed to electrically connect the formed bottom electrode layer in the container with the at least one associated transistor device. A titanium nitride barrier ... 03/29/07 - 20070069264 - Ferroelectric varactors suitable for capacitive shunt switching and wireless sensing A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode ... 03/29/07 - 20070069263 - Electric switch and memory device using the same An electric switch includes a ferroelectric substrate to which metal is added, a pair of electrodes provided on the ferroelectric substrate, and an electric field applying portion for changing the direction of polarization in part of the ferroelectric substrate. ... 03/22/07 - 20070063239 - Semiconductor device A semiconductor device includes: a substrate; a first insulating layer formed on the substrate; a groove formed in the first insulating layer; a barrier layer formed on at least a side surface and a bottom surface of the groove; a second insulating layer formed on the barrier layer; a first ... 03/22/07 - 20070063238 - Semiconductor memory and driving method for the same A semiconductor memory includes a conducting film formed on a substrate; a ferroelectric film formed above or below the conducting film; a source electrode and a drain electrode disposed in positions opposing the conducting film with the ferroelectric film sandwiched therebetween and spaced from each other; and an insulating film ... 03/22/07 - 20070063237 - Magnetic device having multilayered free ferromagnetic layer Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low ... 03/22/07 - 20070063236 - Magnetic device having stabilized free ferromagnetic layer Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low ... 03/15/07 - 20070057300 - Semiconductor device A semiconductor device includes a substrate, a first electrode provided above the substrate, a ferroelectric layer provided above the first electrode, a second electrode provided above the ferroelectric layer, and a dielectric side spacer that is provided above the first electrode and on a side surface of at least the ... 03/01/07 - 20070045692 - Nonvolatile memory devices and methods of manufacturing the same Nonvolatile memory devices and methods of manufacturing the same are provided. The nonvolatile memory devices may include an oxide layer formed of a resistance conversion material, a lower electrode, a nano-wire layer formed of a transition metal on the lower electrode, and an upper electrode formed on the oxide layer. ... 03/01/07 - 20070045691 - Nano-elastic memory device and method of manufacturing the same A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that ... 03/01/07 - 20070045690 - Ferroelectric memory and its manufacturing method A ferroelectric memory includes a substrate, an interlayer dielectric layer composed of at least one layer formed above the substrate, a plurality of ferroelectric capacitors formed above the interlayer dielectric layer, a coating layer that covers the plurality of ferroelectric capacitors, a first opening section provided between the plurality of ... 03/01/07 - 20070045689 - Ferroelectric structures including multilayer lower electrodes and multilayer upper electrodes, and methods of manufacturing same In a ferroelectric structure after a first lower electrode film is formed using a first metal nitride, a second lower electrode film is formed on the first lower electrode film using a first metal, a second metal oxide and/or a first alloy. After a ferroelectric layer is formed on the ... 03/01/07 - 20070045688 - Ferroelectric memory device and fabrication process thereof, fabrication process of a semiconductor device A ferroelectric memory device includes a field effect transistor formed on a semiconductor substrate, an interlayer insulation film formed on the semiconductor substrate so as to cover the field effect transistor, a conductive plug formed in the interlayer insulation film in contact with the first diffusion region, and a ferroelectric ... 03/01/07 - 20070045687 - Semiconductor device A semiconductor device comprising a ferroelectric capacitor having improved reliability is disclosed. According to one aspect of the present invention, it is provided a semiconductor device comprising a transistor formed on a semiconductor substrate, a ferroelectric capacitor formed above the transistor and comprising a lower electrode, a ferroelectric film and ... 03/01/07 - 20070045686 - Ferromagnetic memory cell and methods of making and using the same In a first aspect, a first apparatus is provided. The first apparatus is a memory cell that includes (1) a semiconductor fin enclosure formed on an insulating layer of a substrate; and (2) a ferromagnetic material within the semiconductor fin enclosure. A top surface of the ferromagnetic material is below ... 02/22/07 - 20070040196 - Semiconductor device and manufacturing method thereof, and thin film device A manufacturing method of a semiconductor device is disclosed. The manufacturing method includes the steps of forming a contact plug in an insulation film so as to be connected to an element on a semiconductor substrate, applying PLA pretreatment to the insulation film in an NH3 atmosphere, forming a Ti ... 02/22/07 - 20070040195 - Monolithic integrated passive and active electronic devices with biocompatible coatings A bio-compatible electrical element including a high-dielectric amorphous TixAl1-xOy oxide alloy wherein a TiO2 layer is between the bio-compatible electrical element and a biological such as human environment. A continuous and substantially pinhole free dielectric amorphous TixAl1-xOy oxide alloy wherein x is in the range of from about 0.5 to ... 02/15/07 - 20070034920 - Semiconductor memory cell and corresponding method of producing same A semiconductor memory cell and production method provides a storage capacitor connected to a selection transistor. The storage capacitor is formed as a contact hole capacitor in at least one contact hole for a source or drain region. Such a semiconductor memory cell can be produced cost-effectively and allows a ... 02/15/07 - 20070034919 - Mram with super-paramagnetic sensing layer An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external ... 02/15/07 - 20070034918 - Ferroelectric film, semiconductor device, ferroelectric film manufacturing method, and ferroelectric film manufacturing apparatus An object of the present invention is, while decreasing a relative dielectric constant of a ferroelectric film of Sr2(Ta1-xNbx)O7 (0≦x≦1), to increase an coercive electric field thereof. The present invention is a ferroelectric film manufacturing method, which includes a film forming step of, in a processing chamber at least an ... 02/08/07 - 20070029595 - Semiconductor device and manufacturing method therefor A bottom electrode (52) made of Ir, an initial layer (53), a core layer (54) and a termination layer (55) of a PZT film, and a top electrode (56) made of IrO2, are formed on an underlining film (51). The initial layer (53) is formed in a low oxygen partial ... 02/08/07 - 20070029594 - Ferroelectric capacitor and its manufacturing method and ferroelectric memory device A method for manufacturing a ferroelectric capacitor includes steps of: (a) forming a first crystalline barrier layer; (b) forming a second crystalline barrier layer composed of nitride by nitriding the first crystalline barrier layer; (c) forming a first electrode above the second crystalline barrier layer; (d) forming a ferroelectric film ... 02/08/07 - 20070029593 - Bismuth ferrite films and devices grown on silicon A functional perovskite cell formed on a silicon substrate layer and including a functional layer of bismuth ferrite (BiFeO3 or BFO) sandwiched between two electrode layers. An optional intermediate template layer, for example, of strontium titanate allows the bismuth ferrite layer to be crystallographically aligned with the silicon substrate layer. ... 02/08/07 - 20070029592 - Oriented bismuth ferrite films grown on silicon and devices formed thereby A functional perovskite cell formed on a silicon substrate layer and including a functional layer of bismuth ferrite (BiFeO3 or BFO) sandwiched between two electrode layers. An intermediate template layer, for example, of strontium titanate allows the bismuth ferrite layer to be crystallographically aligned with the silicon substrate layer. Other ... 02/01/07 - 20070023807 - Magnetic memory In a magnetic memory 1, a magneto-resistivity effect element 4 is disposed adjacently to a wire 5 for producing a writing magnetic field and further a ferromagnetic body 20 is disposed so as to cover at least part of the wire 5 and consequently orient the state X of magnetization ... 02/01/07 - 20070023806 - Method and structure for forming slot via bitline for mram devices A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via ... 02/01/07 - 20070023805 - Reverse construction memory cell A method of fabricating a memory cell comprises forming a plurality of doped semiconductor layers on a carrier substrate. The method further comprises forming a plurality of digit lines separated by an insulating material. The digit lines are arrayed over the doped semiconductor layers. The method further comprises etching a ... 01/25/07 - 20070018214 - Magnesium titanium oxide films Embodiments of a magnesium titanium oxide structure on a substrate provide a dielectric for use in a variety of electronic devices. Embodiments of methods of fabricating such a dielectric include forming the magnesium titanium oxide structure by atomic layer deposition. ... 01/18/07 - 20070012978 - Junction-isolated depletion mode ferroelectric memory devices and systems Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells for memory devices and electronic systems. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb. ... 01/18/07 - 20070012977 - Semiconductor device and method for forming the same A semiconductor device includes a MOS transistor having a capacitor-forming surface; and a ferroelectric capacitor formed on the capacitor-forming surface of the MOS transistor and including upper and lower electrode layers of Pt and a dielectric layer sandwiched between the upper and lower electrode layers. The ferroelectric capacitor has a ... 01/18/07 - 20070012976 - Semiconductor device and manufacturing method of the same A seal ring (102) is formed in a manner to surround each ferroelectric capacitor (101). Additionally, a seal ring (103) is formed in a manner to surround a plurality of ferroelectric capacitors (101). Further, a seal ring (104) is formed in a manner to surround all of the ferroelectric capacitors ... 01/18/07 - 20070012975 - Coated conductors Articles are provided including a base substrate having a layer of an IBAD oriented material thereon, and, a layer of barium-containing material selected from the group consisting of barium zirconate, barium hafnate, barium titanate, barium strontium titanate, barium dysprosium zirconate, barium neodymium zirconate and barium samarium zirconate, or a cubic ... 01/18/07 - 20070012974 - Method for manufacturing material layer, method for manufacturing ferroelectric capacitor using the same, ferroelectric capacitor manufactured by the same method, semiconductor memory device having ferroelectric capacitor and manufacturing method thereof Provided is a method for manufacturing a material layer capable of increasing the deposition rate of a noble metal layer on a ferroelectric layer, a method for manufacturing a ferroelectric capacitor using the same, a ferroelectric capacitor manufactured by the same method, and a semiconductor memory device having the ferroelectric ... 01/18/07 - 20070012973 - Semiconductor device having mim capacitor and manufacturing method thereof A semiconductor device includes a capacitor which includes a capacitor insulating film at least including a first insulating film and a ferroelectric film formed in contact with the first insulating film, containing a compound of a preset metal element and a constituent element of the first insulating film as a ... 01/18/07 - 20070012972 - Magnetic memory device A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and generates a magnetic field for recording data in the magnetoresistive element. ... 01/11/07 - 20070007569 - Semiconductor memory device comprising magneto resistive element and its manufacturing method A semiconductor memory device including a memory cell having a first ferromagnetic film, a tunnel barrier film formed on the first ferromagnetic film, and a second ferromagnetic film formed on the tunnel barrier film, the tunnel barrier film having a larger film thickness in its in-surface edge portion than in ... 01/11/07 - 20070007568 - Field-effect transistor The field-effect transistor includes: a ferromagnetic layer, having a film thickness of 50 nm or less, which is made of a Ba—Mn oxide showing ferromagnetism at 0° C. or higher; a dielectric layer made of a dielectric material or a ferroelectric material, and the ferromagnetic layer and the dielectric layer ... 01/11/07 - 20070007567 - Semiconductor substrate and production process thereof A semiconductor substrate includes a wafer, a first stepped structure formed of plural stepped parts formed on a surface of the wafer with a first area occupation ratio, a second stepped structure formed of plural stepped parts formed on the surface of the wafer with a second, different area occupation ... 01/11/07 - 20070007566 - Semiconductor device having silicide film and method of manufacturing the same A semiconductor device having a semiconductor substrate, a SRAM area formed in the semiconductor substrate, the SRAM area having first transistors, the first transistor having a metallic compound film formed on each of a source and a drain regions of the first transistor, and a logic circuit area formed in ... 01/11/07 - 20070007565 - Integration of capacitive elements in the form of perovskite ceramic The use of a conductive bidimensional perovskite as an interface between a silicon, metal, or amorphous oxide substrate and an insulating perovskite deposited by epitaxy, as well as an integrated circuit and its manufacturing process comprising a layer of an insulating perovskite deposited by epitaxy to form the dielectric of ... 01/11/07 - 20070007564 - Semiconductor device and method for fabricating the same A semiconductor device includes: an n-transistor including a first gate insulating film made of a high-dielectric-constant material and a first gate electrode fully silicided with a metal, the first gate insulating film and the first gate electrode being formed in this order over a semiconductor region; and a p-transistor including ... 01/04/07 - 20070001201 - Capacitor with nano-composite dielectric layer and method for fabricating the same A capacitor with a nano-composite dielectric layer and a method for fabricating the same are provided. A dielectric layer of a capacitor includes a nano-composite layer formed by mixing X number of different sub-layers, X being a positive integer greater than approximately 1. A method for forming a dielectric layer ... 12/28/06 - 20060289913 - Pattern definition of mram device using chemical mechanical polishing The present invention provides a method of forming an MRAM cell which minimizes the occurrence of electrical shorts during fabrication. A first conductor is provided in a trench in an insulating layer and an upper surface of the insulating layer and the first conductor is planarized. Then, a first dielectric ... 12/21/06 - 20060284224 - Ferroelectric memory device and method of manufacturing the same A ferroelectric memory device, which includes a vertical ferroelectric capacitor having an electrode distance smaller than a minimum feature size of lithography technology being used and suitable for the miniaturization, and a method of manufacturing the same are disclosed. According to one aspect of the present invention, it is provided ... 12/14/06 - 20060278908 - Write line design in mram A magnetic random access memory device (MRAM) and the method for forming the same are disclosed. The MRAM has a magnetic tunnel junction (MTJ) device, a first write line, and a second write line orthogonal to the first write line, wherein at least one of the first and second write ... 12/14/06 - 20060278907 - Semiconductor element, semiconductor sensor and semiconductor memory element A semiconductor element, a semiconductor sensor, and a semiconductor memory element are provided, in which an MFMIS structure having a lower electrode and an integrated circuit can be integrated. An epitaxially grown γ-Al2O3 single crystal film (2) is disposed on a semiconductor single crystal substrate (1), and an epitaxial single ... 12/07/06 - 20060273367 - Semiconductor device and manufacturing method therefor A ferroelectric capacitor having a bottom electrode (9a), a ferroelectric film (10a) and a top electrode (11a) is formed above a semiconductor substrate (1). The ferroelectric film (10a) is constituted of CSPZT with 0.1-5 mol % of La and 0.1-5 mol % of Nb. ... 12/07/06 - 20060273366 - Methods of manufacturing ferroelectric capacitors and semiconductor devices In a method of manufacturing a ferroelectric capacitor, a lower electrode layer is formed on a substrate. The lower electrode layer includes at least one lower electrode film. A ferroelectric layer is formed on the lower electrode layer, and then an upper electrode layer is formed on the ferroelectric layer. ... 12/07/06 - 20060273365 - Semiconductor device and its manufacture method, and measurement fixture for the semiconductor device A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate. ... 11/30/06 - 20060267058 - Magnetic storage element storing data by magnetoresistive effect In a ferromagnetic tunnel junction element, a recording layer is in a circular shape, which can suppress an increase in magnetization switching field due to miniaturization of the element. Further, the recording layer includes a first ferromagnetic layer, a first non-magnetic layer, a second ferromagnetic layer, a second non-magnetic layer, ... 11/30/06 - 20060267057 - Ferroelectric memory device and manufacturing method thereof A ferroelectric memory device includes a semiconductor substrate, a first insulating film, a plurality of first and second plugs which extend through the first insulating film, conductive hydrogen barrier films, ferroelectric capacitor structural bodies, a first insulating hydrogen barrier film provided so as to cover the ferroelectric capacitor structural bodies, ... 11/30/06 - 20060267056 - Magnetic random access memory with stacked toggle memory cells having oppositely-directed easy-axis biasing A “toggling” type of magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate with each memory stack having a plurality of toggle memory cells stacked along the Z axis. Each stack is located at an intersection region between the two orthogonal write ... 11/30/06 - 20060267055 - Ferroelectric polymer memory device having pyramidal electrode layer and method of forming same A ferroelectric polymer memory device and a method of providing an electrode layer of the device. The device comprises: a substrate; a plurality of electrode layers including a first electrode layer disposed on the substrate and a second electrode layer extending at an angle with respect to the first electrode ... 11/23/06 - 20060261389 - Systems and methods for forming zirconium and/or hafnium-containing layers A method of forming (and apparatus for forming) a zirconium and/or hafnium-containing layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more silicon precursor compounds of the formula Si(OR)4 with one or more zirconium and/or hafnium precursor compounds of the ... 11/23/06 - 20060261388 - Method for manufacturing ferroelectric capacitor A ferroelectric capacitor and a method for manufacturing the same includes a lower electrode, a dielectric layer, and an upper electrode layer, which are sequentially stacked, wherein the dielectric layer has a multi-layer structure including a plurality of sequentially stacked ferroelectric films, and wherein two adjacent ferroelectric films have either ... 11/23/06 - 20060261387 - Semiconductor device and manufacturing method thereof A semiconductor device is disclosed. The semiconductor device includes a ferroelectric capacitor formed on a substrate and a wiring structure formed on the ferroelectric capacitor. The wiring structure includes a dielectric inter layer and a Cu wiring section formed in the dielectric inter layer. In addition, an etching stopper layer ... 11/16/06 - 20060255383 - Spin-polarization devices using rare earth-transition metal alloys A tunnel barrier in proximity with a layer of a rare earth element-transition metal (RE-TM) alloy forms a device that passes negatively spin-polarized current. The rare earth element includes at least one element selected from the group consisting of Gd, Tb, Dy, Ho, Er, Tm, and Yb. The RE and ... 11/09/06 - 20060249768 - Semiconductor device and method of manufacturing the same After forming an interlayer insulating film (14) covering a ferroelectric capacitor, a hydrogen diffusion preventing film (18), an etching stopper (19) and an interlayer insulating film (20) are formed. Then, a wiring having a tantalum nitride (TaN) film (21) (barrier metal film) and a copper (Cu) film (22) is formed ... 11/02/06 - 20060244023 - Ferroelectric memory device and method of manufacturing the same A ferroelectric memory device includes a top electrode, a bottom electrode, a ferroelectric film which is sandwiched between the top and bottom electrodes, includes a first portion having a side surface flushed with a side surface of the top electrode and a second portion having a side surface flushed with ... 11/02/06 - 20060244022 - Semiconductor device and method of manufacturing the same According to an aspect of the present invention, there is provided a semiconductor device comprising a semiconductor substrate, a capacitor which is disposed above the semiconductor substrate and in which a dielectric film is held between lower and upper electrodes, an oxide film formed in such a manner as to ... 11/02/06 - 20060244021 - Adiabatic rotational switching memory element including a ferromagnetic decoupling layer A magnetoresistive memory element includes a stacked structure with a ferromagnetic reference region including a fixed magnetization; a ferromagnetic free region including a free magnetization that is free to be switched between oppositely aligned directions with respect to an easy axis thereof; and a tunneling barrier made of a non-magnetic ... 10/19/06 - 20060231876 - Semiconductor device and mask pattern A semiconductor device according to an aspect of the invention comprises a semiconductor substrate, and a capacitor that is provided above the semiconductor substrate and is configured such that a dielectric film is sandwiched between a lower electrode and an upper electrode, the dielectric film being formed of an ABO3 ... 10/12/06 - 20060226458 - Magnetic memory having synthetic antiferromagnetic pinned layer A magnetic memory element includes a sense structure, a tunnel barrier adjacent the sense structure, and a synthetic antiferromagnet (SAF) adjacent the tunnel barrier on a side opposite the sense structure. The SAF includes an antiferromagnetic structure adjacent a ferromagnetic seed layer. The ferromagnetic seed layer provides a texture so ... 10/12/06 - 20060226457 - Ferroelectric memory device and method of manufacture of same A ferroelectric memory device has a lower insulating film (first insulating film) formed on a semiconductor substrate. A ferroelectric capacitor structure is formed on the lower insulating film. The ferroelectric capacitor structure is created by layering in order a lower electrode, ferroelectric layer and upper electrode. The ferroelectric memory device ... 10/05/06 - 20060220083 - Semiconductor device A semiconductor device includes a semiconductor substrate, a first electrode that is formed over said semiconductor substrate, a capacitive insulating film that is formed on the first electrode and is made of a metal oxide ferroelectric, a second electrode that is formed on the capacitive insulating film, an insulating film ... 10/05/06 - 20060220082 - Semiconductor device and manufacturing method of the same After a ferroelectric capacitor is formed, a cap film made of Ti or Ir is formed on a top electrode of the ferroelectric capacitor. Thereafter, an alumina film which covers the ferroelectric capacitor is formed as a protective film. Further, a SiO2 film which covers the ferroelectric capacitor with the ... 10/05/06 - 20060220081 - Semiconductor device and manufacturing method of the same After a ferroelectric capacitor is formed, an Al wiring (conductive pad) connected to the ferroelectric capacitor is formed. Then, a silicon oxide film and a silicon nitride film are formed around the Al wiring. Thereafter, as a penetration inhibiting film which inhibits penetration of moisture into the silicon oxide film, ... 10/05/06 - 20060220080 - Polymer memory and method of its fabrication An embodiment mitigates one or more of the limiting factors of fabricating polymer ferroelectric memory devices. For example, an embodiment reduces the degradation of the ferroelectric polymer due to the polymer's reaction with, and migration or diffusion of, adjacent metal electrode material. Further, the ferroelectric polymer is exposed to fewer ... 09/28/06 - 20060214208 - Method of manufacturing semiconductor device A Pt film (24), a PLZT film (25), and a top electrode film (26) are formed above a semiconductor substrate (11). Next, the top electrode film (26) is patterned. Then, a PLZT film (27) covering an exposed portion of the PLZT film (25) is formed as an evaporation preventing film. ... 09/28/06 - 20060214207 - Semiconductor device and manufacturing method thereof Threshold voltage of a CMOS transistor which uses a gate insulator made of a hafnium-based high-k material is optimized. A gate insulator of nMOS and pMOS transistors includes a HfOx film and a HfAlOx film formed thereon. At this time, silicon atoms in a n type polycrystalline silicon film which ... 09/28/06 - 20060214206 - Ferroelectric memory device and method of manufacturing the same There is disclosed a ferroelectric memory device comprising an MIS transistor formed on a substrate, a ferroelectric film which is formed above the MIS transistor through an interlayer insulating film, and which has a width substantially equal to a channel length of the MIS transistor, and a same wiring layer ... 09/28/06 - 20060214205 - Thin-film capacitor element and semiconductor device To provide a thin-film capacitor and a semiconductor device capable of preventing a reduction in the dielectric constant due to a residual tensile stress in a ferroelectric layer in a thin-film capacitor using the ferroelectric substance, and increasing the dielectric constant and increasing an electric capacity. In a thin-film capacitor ... 09/28/06 - 20060214204 - Ferroelectric structures and devices including upper/lower electrodes of different metals and methods of forming the same A ferroelectric capacitor structure can include a ferroelectric layer on a lower electrode and an upper electrode on the ferroelectric layer, the upper electrode including a metal oxide and a metal. ... 09/21/06 - 20060208297 - Polymer memory having a ferroelectric polymer memory material with cell sizes that are asymmetric A polymer memory and its method of manufacture are provided. One multi-layer construction of the polymer memory has two sets of word lines and a set of bit lines between the word lines. The word lines of each set of word lines have center lines that are spaced by a ... 09/21/06 - 20060208296 - Novel structure and method to fabricate high performance mtj devices for mram applications A high performance MTJ in an MRAM array is disclosed in which the bottom conductor has an amorphous Ta capping layer. A key feature is a surfactant layer comprised of oxygen that is formed on the Ta surface. The resulting smooth and flat Ta capping layer promotes a smooth and ... 09/21/06 - 20060208295 - Ferroelectric memory device The present invention provides a ferroelectric memory device (101) having plural memory cells each composed of a memory cell transistor and a memory cell capacitor, in which the respective memory cell capacitor (101a) comprises a lower electrode (2) that is independent for each of the memory cell capacitors, a ferroelectric ... 09/14/06 - 20060202244 - Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing A magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate, with each memory stack having two memory cells stacked along the Z axis and each memory cell having an associated biasing layer. Each biasing layer reduces the switching field of its associated ... 09/07/06 - 20060197128 - Ferromagnetic-semiconductor spin polarizer of electrons in nonmagnetic semiconductors An efficient spin polarizer in nonmagnetic semiconductors is provided. Previous spin injection devices suffered from very low efficiency (less than 35%) into semiconductors. An efficient spin polarizer is provided which is based on ferromagnetic-semiconductor heterostructures and ensures spin polarization of electrons in nonmagnetic semiconductors close to 100% near the ferromagnetic-semiconductor ... 08/31/06 - 20060192235 - System and method for reducing shorting in memory cells An MRAM device includes an array of magnetic memory cells having an upper conductive layer and a lower conductive layer separated by a barrier layer. To reduce the likelihood of electrical shorting across the barrier layers of the memory cells, spacers can be formed around the upper conductive layer and, ... 08/24/06 - 20060186445 - Bias-adjusted giant magnetoresistive (gmr) devices for magnetic random access memory (mram) applications A bias-adjusted giant magnetoresistive (GMR) device includes a ferromagnetic reference layer, which has a magnetization that remains relatively fixed when a range of magnetic fields is applied, and a ferromagnetic switching layer, which has a magnetization that can be changed by applying a relatively small magnetic field. In MRAM applications, ... 08/24/06 - 20060186444 - Spin polarization amplifying transistor An embodiment of the invention is a transistor formed in part by a ferromagnetic semiconductor with a sufficiently high ferromagnetic transition temperature to coherently amplify spin polarization of a current. For example, an injected non-polarized control current creates ferromagnetic conditions within the transistor base, enabling a small spin-polarized signal current ... 08/24/06 - 20060186443 - Magnetic memory A TMR element has a free first magnetic layer, a second magnetic layer with a magnetization direction B fixed, a nonmagnetic insulating layer provided between the first magnetic layer and the second magnetic layer, a third magnetic layer provided above a surface of the first magnetic layer and having a ... 08/17/06 - 20060180839 - Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same A layered ferromagnetic structure is composed of a first ferromagnetic layer positioned over a substrate; a second ferromagnetic layer positioned over the first ferromagnetic layer; and a first non-magnetic layer placed between the first and second ferromagnetic layers. The top surface of the first ferromagnetic layer is in contact with ... 08/17/06 - 20060180838 - Amorphous high-k thin film and manufacturing method thereof An amorphous high-k thin film for a semiconductor device and a manufacturing method thereof are provided. The amorphous high-k thin film includes Bi, Ti, Al, and O. Since a BTAO based amorphous dielectric thin film is used as a dielectric material of a DRAM capacitor, a dielectric constant is more ... 08/10/06 - 20060175645 - Semiconductor device and its manufacturing method A semiconductor device includes a switching element formed on a semiconductor substrate, a first interconnect layer formed on the semiconductor substrate and having a first wiring connected to one terminal of the switching element, a ferroelectric capacitor formed on the first interconnect layer and having a first electrode connected to ... 08/10/06 - 20060175644 - Ferroelectric recording medium and writing method for the same A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases ... 08/10/06 - 20060175643 - Ferroelectric element and method of manufacturing ferroelectric element Additional elements of Ca, Sr, and Ir are added to a single layer lead lanthanum zirconate titanate (PLZT), thereby decreasing a c/a ratio to within a range from 1.00 to 1.008 smaller than a general c/a of a range from about 1.01 to 1.03 generally used in a lead lanthanum ... 08/10/06 - 20060175642 - Semiconductor device and method of manufacturing the same In a ferroelectric capacitor structure 30 in which a lower electrode and an upper electrode are coupled capacitively with each other through a ferroelectric film, when the upper electrode is formed into a two-layer structure in which a conductive oxide film and an oxidation-resistant metal film are stacked, a protective ... 08/03/06 - 20060170021 - Ferroelectric capacitor A ferroelectric capacitor including a lower electrode, a ferroelectric layer and an upper electrode. A part of at least any one of the lower and upper electrodes is formed of a material selected from the group consisting of TiOx, TaOx, ReOx, WOx, IrO2, PtO2, RuOx, PdOx, and OsOx. ... 08/03/06 - 20060170020 - Semiconductor memory device and method for fabricating the same A semiconductor memory device includes: an insulating layer formed on a semiconductor substrate; a first plug formed inside a first hole formed in the insulating layer; an insulative first hydrogen barrier layer formed on the insulating layer and having a second hole communicating with the first hole; a second plug ... 08/03/06 - 20060170019 - Semiconductor storage device and manufacturing method for the same There is provided a semiconductor storage device comprising a ferroelectric capacitor superior in barrier capability against penetration of hydrogen from all directions including a transverse direction. The device comprises a transistor formed on a semiconductor substrate, the ferroelectric capacitor formed above the transistor and including a lower electrode, a ferroelectric ... 07/27/06 - 20060163630 - Tic as a thermally stable p-metal carbide on high k sio2 gate stacks A compound metal comprising TiC which is a p-type metal having a workfunction of about 4.75 to about 5.3, preferably about 5, eV that is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer is provided as well as a method of fabricating the ... 07/27/06 - 20060163629 - Rf field heated diodes for providing thermally assisted switching to magnetic memory elements An exemplary array of thermally-assisted magnetic memory structures includes a plurality of magnetic memory elements, each magnetic memory element being near a diode. A diode near a selected magnetic memory element can be heated by absorbing energy from a radio frequency electromagnetic field. The heated diode can be used to ... 07/20/06 - 20060157765 - Magnetic random access memory designs with controlled magnetic switching mechanism An MRAM array is formed of MTJ cells shaped so as to have their narrowest dimension at the middle of the cell. A preferred embodiment forms the cell into the shape of a kidney or a peanut. Such a shape provides each cell with an artificial nucleation site at the ... 07/20/06 - 20060157764 - Methods and apparatuses for producing a polymer memory device Embodiments of the invention provide a method for producing ferroelectric polymer devices (FPMDs) employing conditions that avoid or reduce detrimental impact on the ferroelectric polymer film. For one embodiment, a damascene patterning metallization technique is used. For one embodiment a first metal layer is deposited on a substrate to form ... 07/20/06 - 20060157763 - Feram device and method for manufacturing the same An embodiment of the FeRAM includes a ferroelectric capacitor including a bottom electrode, a ferroelectric layer, and a top electrode. Strontium ruthenium oxide is formed between the bottom electrode and the ferroelectric layer and between the ferroelectric layer and the top electrode. A diffusion barrier layer including strontium ruthenium oxide ... 07/20/06 - 20060157762 - Semiconductor device having ferroelectric capacitor and its manufacture method A semiconductor device includes: a semiconductor substrate; a MOS transistor formed in the semiconductor substrate and having an insulated gate and source/drain regions on both sides of the insulated gate; a ferroelectric capacitor formed above the semiconductor substrate and having a lower electrode, a ferroelectric layer and an upper electrode; ... 07/13/06 - 20060151819 - Self-aligned v0-contact for cell size reduction An FeRAM comprising includes a ferroelectric material sandwiched between a top electrode and a bottom electrode. A V0-contact provides an electrical connection with an underlying CS-contact. The V0-contact is aligned using the bottom electrode. A liner layer covers a sidewall of the bottom electrode and provides a stop to an ... 07/06/06 - 20060145226 - Magnetic ram A memory element for a magnetic RAM, having a first magnetic portion in a first recess of a first insulating layer; and a non-magnetic portion and a second magnetic portion in a second recess of a second insulating layer covering the first insulating layer, the second recess exposing the first ... 07/06/06 - 20060145225 - Fast remanent resistive ferroelectric memory The invention relates to a memory element comprised of an electrode (2), of a ferroelectric layer (3), which is adjacent thereto, of a layer (4), which is made of a non-ferroelectric material and which is adjacent to said ferroelectric layer (3), and of an electrode (5), which is made of ... 06/29/06 - 20060138508 - Insulating film and electronic device An insulating film comprising: a first barrier layer;a well layer provided; and a second barrier layer is proposed. The first barrier layer consists of a material having a first bandgap and a first relative permittivity. The well layer is provided on the first. barrier layer, and consists of a material ... 06/29/06 - 20060138507 - Ferroelectric film, method of manufacturing ferroelectric film, ferroelectric capacitor, and ferroelectric memory A ferroelectric film having a ferroelectric shown by a general formula (Pb1-dBid)(B1-aXa)O3, B including at least one of Zr and Ti, X including at least one of Nb and Ta, “a” being in a range of “0.05≦a≦0.4”, and “d” being in a range of “0<d<1”. ... 06/29/06 - 20060138506 - Semiconductor memory device and method for manufacturing the same A semiconductor memory device includes a substrate having a semiconductor element formed thereon, an interlayer dielectric layer formed above the substrate, a plug formed in the interlayer dielectric layer, an adhesion layer formed in a region including a region above the plug, and a ferroelectric capacitor formed above the adhesion ... 06/29/06 - 20060138505 - Tunneling magnetoresistance device with high magnetoimpedance (mi) effect A tunneling magnetoresistance device with high magnetoimpedance effect, comprising: a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer which is located between the first ferromagnetic layer and the second ferromagnetic layer. Wherein an alternating current is applied to the tunneling magnetoresistance device, the tunneling magnetoresistance device ... 06/29/06 - 20060138504 - Nonvolatile ferroelectric memory device A nonvolatile ferroelectric memory device is provided so as to control read/write operations of a nonvolatile memory cell using a channel resistance of the memory cell which is differentiated by polarity states of a ferroelectric material. In the memory device, an insulating layer is formed on a bottom word line, ... 06/29/06 - 20060138503 - Ferroelectric memory A ferroelectric memory comprises a first transistor connected between N1 and N2 nodes, a second transistor connected between the N2 node and an N3 node, a first transistor connected between P1 and P2 nodes, a second transistor connected between the P2 node and a P3 node, a first wiring formed ... 06/29/06 - 20060138502 - Field-effect transistor with spin-dependent transmission characteristics and non-volatile memory using same When a gate voltage VGS is applied, the Schottky barrier width due to the metallic spin band in the ferromagnetic source is decreased, and up-spin electrons from the metallic spin band are tunnel-injected into the channel region. However, down-spin electrons from the nonmagnetic contact (3b) are not injected because of ... 06/29/06 - 20060138501 - Semi-conductor dielectric component with a praseodymium oxide dielectric A semiconductor component having a silicon-bearing layer and a praseodymium oxide layer, wherein arranged between the silicon-bearing layer and the praseodymium oxide layer is a mixed oxide layer containing silicon, praseodymium and oxygen. The layer is of a thickness of a maximum of 5 nanometers. A production process for such ... 06/22/06 - 20060131629 - Magnetic random access memory having magnetoresistive element with nonmagnetic metal layer A magnetic random access memory in which a plurality of magnetoresistive elements are laid out in an array, the magnetoresistive element includes a lower ferromagnetic layer, an upper ferromagnetic layer which has a planar shape smaller than a planar shape of the lower ferromagnetic layer, a first nonmagnetic insulating layer ... 06/22/06 - 20060131628 - Nonvolatile memory and fabrication method thereof A nonvolatile memory and a fabrication method thereof. The nonvolatile memory includes a substrate, a bottom electrode deposited on the substrate, a resistor layer deposited on the bottom electrode, and a top electrode on the resistor layer. The bottom electrode includes LaNiO3 and the resistor layer includes doped SrZrO3. ... 06/22/06 - 20060131627 - Ferroelectric material, its manufacture method and ferroelectric memory BiFeO3 precursor solution is coated on the surface of an underlying member. Teat treatment is performed after the coating to form a dielectric film. The dielectric film is heated in a non-oxidizing atmosphere to crystallize the dielectric film. With this method, a ferroelectric material can be obtained which contains constituent ... 06/15/06 - 20060124978 - Spin valve transistor with stabilization and method for producing the same A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a non-magnetic layer adjacent the bias layer, and a ferromagnetic layer over the non-magnetic layer, wherein the insulating layer and ... 06/08/06 - 20060118845 - Techniques for coupling in semiconductor devices Techniques for exchange coupling of magnetic layers in semiconductor devices are provided. In one aspect, a semiconductor device is provided. The device comprises at least two magnetic layers, and a spacer layer formed between the magnetic layers, the spacer layer being configured to provide ferromagnetic exchange coupling between the layers, ... 06/08/06 - 20060118844 - Transistor type ferroelectric memory and method of manufacturing the same A transistor type ferroelectric memory includes a group-IV semiconductor layer, an oxide semiconductor layer formed over the group-IV semiconductor layer, a ferroelectric layer formed over the oxide semiconductor layer, a gate electrode formed over the ferroelectric layer, and a source region and a drain region formed in the group-IV semiconductor ... 06/08/06 - 20060118843 - Ferroelectric/paraelectric multilayer thin film, method of forming the same, and high frequency variable device using the same A ferroelectric/paraelectric multilayer thin film having a high tuning rate of a dielectric constant and small dielectric loss to overcome limitations of a tuning rate of a dielectric constant and dielectric loss of a ferroelectric thin film, a method of forming the same, and a high frequency variable device having ... 06/08/06 - 20060118842 - Magnetic random access memory A magnetic random access memory according to an example of the present invention comprises a magnetoresistive element, a write line for use in generation of a magnetic field for data writing with respect to the magnetoresistive element, and a strained layer which is disposed so as to correspond to the ... 06/08/06 - 20060118841 - Ferroelectric capacitor with parallel resistance for ferroelectric memory Ferroelectric memory cells (3) are presented, in which a cell resistor (R) is integrated into the cell capacitor (C) to inhibit charge accumulation or charge loss at the cell storage node (SN) when the cell (3) is not being accessed while avoiding significant disruption of memory cell access operations. Methods ... 06/08/06 - 20060118840 - Plt/pzt ferroelectric structure An electrically stable PbLa0.5TiO3/PbZr0.52Ti0.48O3 (PLT/PZT) ferroelectric structure may fabricated using precursor solutions formed using a simple sol-gel process. The PLT/PZT ferroelectric structure may be extended to a PLT/PZT/PLT ferroelectric capacitor structure. In terms of device application, better ferroelectric properties with reliable fatigue characteristics are desirable to render satisfactory performance and ... 06/08/06 - 20060118839 - Tunnel transistor having spin-dependent transfer characteristics and nonvolatile memory using same A MISFET the channel region of which is a ferromagnetic semi-conductor has a feature that the drain current can be controlled by the gate voltage and a feature that the transfer conductance can be controlled by the relative directions of magnetization in the ferromagnetic channel region and the ferromagnetic source ... 05/25/06 - 20060108623 - Oxidative top electrode deposition process, and microelectronic device structure A method of preventing oxygen deficiency in a ferroelectric or high ε film material having a top electrode layer deposited thereon. Process conditions are employed that either enable the top electrode layer to be formed without oxygen abstraction from the ferroelectric or high ε film material in the vicinity and ... 05/25/06 - 20060108622 - Ferroelectric integrated circuit devices having an oxygen penetration path and methods for manufacturing the same Ferroelectric integrated circuit devices, such as memory devices, are formed on an integrated circuit substrate. Ferroelectric capacitor(s) are on the integrated circuit substrate and a further structure on the integrated circuit substrate overlies at least a part of the ferroelectric capacitor(s). The further structure includes at least one layer providing ... 05/25/06 - 20060108621 - Capacitor insulating film, method for fabricating the same, capacitor element, method for fabricating the same, semiconductor memory device, and method for fabricating the same A capacitor insulating film is composed of a ferroelectric film formed on a substrate and containing an element functioning as a crystal nucleus which allows the growth of a crystal in a random crystal orientation. ... 05/25/06 - 20060108620 - Reduced power magnetoresistive random access memory elements Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free SAF structure. The array has a finite ... 05/25/06 - 20060108619 - Ferromagnetic iv group based semiconductor, ferromagnetic iii-v group based compound semiconductor, or ferromagnetic ii-iv group based compound semiconductor, and method for adjusting their ferromagnetic characteristics Disclosed is a ferromagnetic group IV-based semiconductor or a ferromagnetic group III-V-based or group II-VI-based compound semiconductor, comprising a group IV-based semiconductor or a group III-V-based or group II-VI-based compound semiconductor, which contains at least one rare-earth metal element selected from the group consisting of Ce, Pr, Nd, Pm, Sm, ... 05/18/06 - 20060102944 - Ferroelectric capacitor and method of manufacturing the same A ferroelectric capacitor and a method of manufacturing the same are provided, wherein the ferroelectric capacitor of a semiconductor device, which sequentially includes a lower electrode, a ferroelectric layer, and an upper electrode on a conductive layer connected to a transistor formed on a semiconductor substrate, includes an oxidation preventing ... 05/18/06 - 20060102943 - Structure and manufacturing method of semiconductor memory device A semiconductor memory device having a cross point structure includes a plurality of upper electrodes arranged to extend in one direction, and a plurality of lower electrodes arranged to extend in another direction at a right angle to the one direction of the upper electrodes. Memory materials are provided between ... 05/18/06 - 20060102942 - Ferroelectric memory and method for manufacturing the same The ferroelectric memory includes a ferroelectric capacitor structure having a ferroelectric layer and formed on a first insulating film, a first barrier film formed to cover the ferroelectric capacitor structure and the first insulating film, a second insulating film formed on the first barrier film, a first buried contact formed ... 05/18/06 - 20060102941 - Semiconductor device Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor provided above the semiconductor substrate and including a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode, the bottom electrode comprising a first conductive film containing iridium, a second conductive ... 05/11/06 - 20060097299 - Semiconductor device including capacitor and method of fabricating same A semiconductor device includes a capacitor having a bottom electrode, a dielectric layer formed on the bottom electrode, a top electrode formed on the dielectric layer, and a contact plug having a metal that is connected with the top electrode, wherein the top electrode includes a doped poly-Si1-xGex layer and ... 05/11/06 - 20060097298 - Magnetic random access memory with reduced currents in a bit line and manufacturing method thereof A magnetic random access memory with reduced currents in a bit line and a manufacturing method thereof. In one embodiment, the memory includes a bottom electrode, a first dielectric layer on the bottom electrode, a via in the first dielectric layer, a magnetic tunnel junction (MTJ) element that is aligned ... 05/04/06 - 20060091438 - Semiconductor device and manufacturing method thereof A ferroelectric capacitor including a bottom electrode (15), a ferroelectric film (16) and a top electrode (17) is covered with an interlayer insulating film (18). One end of the bottom electrode (15) is formed like comb teeth. To match with the remaining portion of that end, a plurality of contact ... 05/04/06 - 20060091437 - Resistive memory device having array of probes and method of manufacturing the resistive memory device Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on ... 05/04/06 - 20060091436 - Methods of forming field effect transistors having metal silicide gate electrodes Methods of forming field effect transistors according to embodiments of the invention include forming a conductive gate electrode (e.g., polysilicon gate electrode) on a semiconductor substrate and forming a first metal layer on the conductive gate electrode. This first metal layer may include a material selected from a group consisting ... 05/04/06 - 20060091435 - Organic electronic circuit and method for making the same In an organic electronic circuit (C), particularly a memory circuit with an organic ferroelectric or electret material (2) the active material comprises fluorine atoms and consists of various organic materials. The active material is located between first and second electrode sets constituting respectively bottom and top electrodes (1a;1b) of the ... 05/04/06 - 20060091434 - Strain-engineered ferroelectric thin films A strained thin film structure includes a substrate layer formed of a crystalline scandate material having a top surface, and a strained layer of crystalline ferroelectric epitaxially grown with respect to the crystalline substrate layer so as to be in a strained state and at a thickness below which dislocations ... 04/20/06 - 20060081902 - Ferroelectric memory and method of manufacturing the same A method of manufacturing a ferroelectric memory includes: (a) stacking a lower electrode layer, a ferroelectric layer, and an upper electrode layer on a base in that order to form a ferroelectric laminate; (b) patterning the ferroelectric laminate to form a ferroelectric capacitor; (c) forming a first barrier film which ... 04/20/06 - 20060081901 - Ferroelectric memory, multivalent data recording method and multivalent data reading method A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in the vicinity of the first ... 04/13/06 - 20060076593 - Method to sputter deposit metal on a ferroelectric polymer Methods of depositing various metal layers adjacent to a ferroelectric polymer layer are disclosed. In one embodiment, a collimator may be used during a sputtering process to filter out charged particles from the material that may be deposited as a metal layer. In various embodiments, a metal layer may contain ... 04/13/06 - 20060076592 - Integratable polarization rotator Embodiments of the invention provide a polarization rotator. The polarization rotator may be integrated with a waveguide on a substrate, and may include a ferromagnetic semiconductor layer on the substrate, a first doped layer on the ferromagnetic semiconductor layer, and a second doped layer on the first doped layer. ... 04/06/06 - 20060071257 - Gate layer diode method and apparatus Method, apparatus, and article of manufacture for a diode defined by a |