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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Having Insulated Electrode (e.g., Mosfet, Mos Diode) > Light Responsive Or Combined With Light Responsive Device > Imaging Array > With Shield, Filter, Or Lens With Shield, Filter, Or LensWith Shield, Filter, Or Lens patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/31/08 - 20080023739 - Method of manufacturing a semiconductor wafer comprising an integrated optical filter A method manufactures semiconductor chips each comprising a component implanted in the semiconductor. The method includes collectively implanting components onto a front face of a semiconductor wafer and fixing a plate of a transparent material onto the front face of the wafer. Fixing the plate of transparent material is preceded ... 01/10/08 - 20080006859 - Method for manufacturing lenses, in particular for an imager comprising a diaphragm A method for manufacturing a lens of a polymer material, comprises producing in the core of the lens or on the surface of the latter at least one opaque zone having an optical function, by locally degrading the molecular structure of the polymer material using a beam of laser light. ... 12/20/07 - 20070290246 - Image sensor and image sensor integrated type active matrix type display device To fabricate an active matrix type display device integrated with an image sensor at a low cost and without complicating process, an image sensor laminated with TFT and a light receiving unit is formed on a light receiving matrix, a display matrix is arranged with TFT and pixel electrodes on ... 12/20/07 - 20070290245 - Solid-state imaging device A pixel area, which is composed of a plurality of unit pixels each including a photoelectric conversion unit and a signal scanning circuit, is formed on a semiconductor substrate. An optical black pixel region, in which a plurality of optical black pixels for setting a dark-time level are formed, is ... 12/20/07 - 20070290244 - Method for processing a scratched surface, particularly a glass plate of a semiconductor wafer A method for processing a scratched surface of a material that is transparent to electromagnetic radiation includes a step of depositing onto the scratched surface at least one layer of a polymer material having substantially the same optical index as the material having the scratched surface, so as to fill ... 10/25/07 - 20070246760 - Semiconductor device A semiconductor device includes a semiconductor element that is set up on a semiconductor layer, a light shielding wall that is set up around the semiconductor element, a hole that is set up on the light shielding wall, and a wiring layer that is electrically connected to the semiconductor element ... 10/25/07 - 20070246759 - Semiconductor device A semiconductor device includes a semiconductor element that is set up on a semiconductor layer, a light shielding wall that is set up around the semiconductor element, a hole that is set up on the light shielding wall, and a wiring layer that is electrically connected to the semiconductor element ... 10/25/07 - 20070246758 - Semiconductor device A semiconductor device includes a semiconductor element that is set up on a semiconductor layer, a light shielding wall that is set up around the semiconductor element, a hole that is set up on the light shielding wall, and a wiring layer that is electrically connected to the semiconductor element ... 08/09/07 - 20070181923 - Solid-state image sensor comprising plural lenses A solid-state image sensor includes pixels and lenses. Each of the pixels on a semiconductor substrate includes a photodetecting section which photoelectrically converts incident light. Each of the lenses condenses the incident light on the photodetecting section. The lenses have a fixed curvature on an incident surface for the incident ... 07/19/07 - 20070164335 - Pixel cells in a honeycomb arrangement The present invention, in the various exemplary embodiments, provides a RGB color filter array. The red, green and blue pixel cells are arranged in a honeycomb pattern. The honeycomb layout provides the space to vary the size of pixel cells of an individual color so that, for example, the photosensor ... 07/19/07 - 20070164334 - Solid-state imaging device, production method and drive method thereof, and camera A solid-state imaging device capable of reducing an eclipse (blocking) of an incident light at a circumferential portion of a light receiving portion and realizing a larger angle of view and high-speed driving. A single-layer transfer electrode configuration of forming first transfer electrodes and second transfer electrodes by one polysilicon ... 07/05/07 - 20070152251 - Image sensor and manufacturing method for the same An image sensor including a first region where a pad is to be formed, and a second region where a light-receiving element is to be formed. A pad is formed over a substrate of the first region. A passivation layer is formed over the substrate of the first and second ... 05/31/07 - 20070120163 - Complementary metal oxide semiconductor image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same is disclosed, to enhance the image-sensing efficiency by forming a concave lens area for improving the light-condensing efficiency in a planarization layer formed before a micro-lens array, in which the CMOS image sensor includes a plurality of photosensitive devices ... 05/31/07 - 20070120162 - Method and apparatus for blocking light to peripheral circuitry of an imager device Methods and apparatuses are disclosed which provide imager devices having a light blocking material layer formed over peripheral circuitry outside a pixel cell array. ... 04/19/07 - 20070085120 - Optical color sensor system An optical color sensor system is provided including providing a substrate having an optical sensor therein and forming a passivation layer over the substrate. The passivation layer is planarized and color filters are formed over the passivation layer. A planar transparent layer is formed over the color filters and microlenses ... 03/08/07 - 20070051992 - Cmos image sensor and method of fabricating the same Provided are a CMOS image sensor and a fabricating method thereof. The CMOS image sensor includes a device isolation layer, a plurality of photodiode regions, an interlayer insulating layer, a refracting layer, a planarizing layer, a color filter layer, and a plurality of microlenses. The refracting layer, with a higher ... 03/08/07 - 20070051991 - Cmos image sensor and method for fabricating the same Provided are a CMOS image sensor and a method for fabricating the same. The CMOS image sensor including: a metal pad formed on a pad region of a substrate; an insulation layer formed on the entire surface of the substrate, and having a metal pad opening part to expose a ... 03/01/07 - 20070045685 - Method and apparatus providing integrated color pixel with buried sub-wavelength gratings in solid state imagers Imaging devices utilizing sub-wavelength gratings to separate the spectral components of the natural white light are disclosed. This disclosed method and apparatus redirects the light to be collected onto separate photosensors for different wavelengths to provide improved quantum efficiency. ... 12/14/06 - 20060278906 - Image sensor An image sensor includes a substrate, transparent layers covering the substrate and delimiting an exposition surface exposed to light, separate photosensitive areas at the substrate level and, for each photosensitive area, a first optical means capable of deviating towards the photosensitive area light reaching a central region of a portion ... 12/07/06 - 20060273364 - Identical/symmetrical metal shielding An image sensor includes a unit cell having a plurality of pixels; the unit cell having a plurality of photodetectors having two or more subsets in which each subset has a physical shape which is different than the other subset; and light-shielding layers that create an aperture associated with each ... 09/28/06 - 20060214203 - Formation of micro lens by using flowable oxide deposition A method of forming a microlens employing relatively few processing steps and with a controlled microlens radii using a processes including a flowable oxide is disclosed. A lens form having recesses therein is produced and a flowable oxide material is deposited in recesses. Surface tension of the flowable oxide material ... 09/28/06 - 20060214202 - Apparatus and methods for shielding integrated circuitry Systems and methods are provided for shielding integrated circuits from electromagnetic or electrostatic fields by locating an active device layer between two conductors that are electrically coupled together. In certain embodiments, a sensor comprises a conductive substrate that provides structural support and shielding to circuit elements in a semiconductor device ... 09/21/06 - 20060208294 - Method of manufacturing magnetic random access memory including middle oxide layer In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer ... 09/21/06 - 20060208293 - Color filter substrate for liquid crystal display device and method for fabricating the same A method for fabricating a color filter substrate for a liquid crystal display device having a RGBW pixel structure, wherein a white sub-color filter layer is formed during a process of forming a planarization layer with a step, and a spacer pattern is formed on the white sub-color filter layer ... 07/13/06 - 20060151818 - Solid state imaging device and production method therefor The present invention relates to a CMOS-type solid-state imaging device and a method for manufacturing thereof, and provides a solid-state imaging device capable of optimally condensing light by a single intra-layer lens and a manufacturing method capable of forming an intra-layer lens with high precision. The solid-state imaging device according ... 07/06/06 - 20060145224 - Cmos image sensor and method for fabricating the same Provided are a CMOS image sensor in which microlenses are formed in a remaining space in a patterned light shielding layer to improve image sensor characteristics and to protect the microlenses during packaging, and a method of fabricating the same. The CMOS image sensor may include: a semiconductor substrate; at ... 07/06/06 - 20060145223 - Image sensor capable of adjusting focusing length for individual color and fabrication method thereof An image sensor and a fabrication method thereof are provided. The image sensor includes: a first photodiode formed in a substrate and receiving a first color; a second photodiode formed in the substrate apart from the first photodiode and receiving a second color with a wavelength longer than that of ... 07/06/06 - 20060145222 - Cmos image sensor and method for manufacturing the same A CMOS image sensor includes a photodiode in a semiconductor substrate; an insulating interlayer over the semiconductor substrate including the photodiode; a passivation layer pattern on the insulating interlayer corresponding to the photodiode; a first light-shielding layer pattern on the insulating interlayer between each passivation layer pattern; a second light-shielding ... 07/06/06 - 20060145221 - Cmos image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same can ensure isolation characteristics using a shallow trench isolation (STI) process and a selective epitaxy method. The CMOS image sensor and method for fabricating the same can also reduce pixel size. The CMOS image sensor includes a semiconductor substrate, ... 07/06/06 - 20060145220 - Cmos image sensor and method for fabricating the same Provided are a CMOS image sensor which has an infrared ray cut-off filter formed therein such that the size of a camera module of a portable telephone can be reduced and manufacturing yield can be improved and a method of manufacturing the same. The CMOS image sensor includes a color ... 07/06/06 - 20060145219 - Cmos image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same are disclosed, in which light that transmits through a microlens is prevented from being beyond a photodiode region to minimize loss of incident light and to improve low illumination characteristics of the CMOS image sensor. The CMOS image sensor ... 07/06/06 - 20060145218 - Microlens of cmos image sensor and method of manufacturing the same A method of a microlens of a CMOS image sensor eliminates a flattened gap between the curvatures of adjacent microlenses. A plurality of color filter layers is formed on a semiconductor substrate on which a photodiode region, a gate electrode, an interlayer insulating layer, and a metal interconnection are formed. ... 07/06/06 - 20060145217 - Cmos image sensor and method for manufacturing the same A CMOS image sensor and a method for manufacturing the same improves photosensitivity and prevent loss of light by forming a photo-sensing unit under a color filter. The CMOS image sensor may include a plurality of transistors formed on a semiconductor substrate, a metal line formed over the plurality of ... 07/06/06 - 20060145216 - Cmos image sensor and fabricating method thereof A CMOS image sensor and fabricating method thereof enable enhanced photo-response characteristics and protect a microlens in packaging by embedding the microlens in a passivation layer pattern. The image sensor may include a semiconductor substrate, a photodiode, a metal line, an insulating layer, a passivation layer pattern, and a microlens ... 06/29/06 - 20060138500 - Cmos image sensor and method for fabricating the same A CMOS image sensor and method for fabricating the same improve image characteristics by eliminating the thickness of a planarization layer. The CMOS image sensor includes a semiconductor substrate; a plurality of active devices, provided in a predetermined surface of the semiconductor substrate, for generating electrical charges according to an ... 06/29/06 - 20060138499 - Solid-state image sensor, method of manufacturing the same, and camera A solid-state image sensor of the present invention is a solid-state image sensor in which pixel cells are arranged on a semiconductor substrate, wherein each of the pixel cells includes: a photoelectric conversion unit that performs photoelectric conversion of incident light; and a microlens formed above the photoelectric conversion unit, ... 06/29/06 - 20060138498 - Cmos image sensor and method for manufacturing the same Disclosed are a CMOS image sensor capable of improving the focusing capability of light and a method for manufacturing the same. The CMOS image sensor includes a plurality of first micro-lenses formed in the upper part of the planarization layer, each of the first micro-lenses arranged over a corresponding photodiode, ... 06/29/06 - 20060138497 - Cmos image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same are disclosed, in which double microlenses are formed using materials having different refractive indexes to improve concentration efficiency of light, thereby improving the characteristics of the image sensor. ... 06/29/06 - 20060138496 - Semiconductor device A semiconductor device comprising: a first light shielded region including a first semiconductor element, the first light shielded region being defined by a first light shielding wall provided in the periphery thereof; a second light shielded region including a second semiconductor element, the second light shielded region being defined by ... 06/22/06 - 20060131626 - Semiconductor device A semiconductor device includes a semiconductor element that is set up on a semiconductor layer, a light shielding wall that is set up around the semiconductor element, a hole that is set up on the light shielding wall, and a wiring layer that is electrically connected to the semiconductor element ... 06/08/06 - 20060118838 - Photo mask and semiconductor device fabricated using the same A photo mask and a semiconductor device fabricated using the same is disclosed. The photo mask to form a mask pattern defining a STAR gate region includes a transparent substrate, and a light-shielding pattern defining a zigzag W-STAR gate region, wherein a waved portion of the light-shielding pattern partially overlaps ... 05/18/06 - 20060102940 - Semiconductor device having a photodetector and method for fabricating the same The present invention is directed to a semiconductor device having a photodetector and a method of fabricating the same. The photodetector includes a visible ray absorbing pattern disposed on a top and/or bottom surface of an interconnection formed at a light shielding area between adjacent photodetectors, which prevents obliquely incident ... 04/13/06 - 20060076591 - Solid state image pickup element and method of manufacturing solid state image pickup element Provided is a solid state image pickup element which can exponentially reduce the in-plane photoelectric conversion portion characteristic distribution that is created in forming color filters by a common photolithography technique and which, when color filters are formed by split exposure, can reduce image non-uniformity between exposure regions in a ... 04/13/06 - 20060076590 - Structure for implementation of back-illuminated cmos or ccd imagers A structure for implementation of back-illuminated CMOS or CCD imagers. An epitaxial silicon layer is connected with a passivation layer, acting as a junction anode. The epitaxial silicon layer converts light passing through the passivation layer and collected by the imaging structure to photoelectrons. A semiconductor well is also provided, ... 03/23/06 - 20060060899 - Image sensor and method of manufacturing same An image sensor includes a photodiode formed in substrate, an insulating interlayer structure formed on the substrate, a metal structure formed in the insulating interlayer structure, a dummy pattern formed on the insulating interlayer structure, and a light-shielding layer pattern enclosing the dummy pattern. The dummy pattern is at least ... 02/23/06 - 20060038209 - Photoelectric conversion device and manufacturing method thereof A photoelectric conversion device is provided which is capable of improving the light condensation efficiency without substantially decreasing the sensitivity. The photoelectric conversion device has a first pattern provided above an element isolation region formed between adjacent two photoelectric conversion elements, a second pattern provided above the element isolation region ... 02/02/06 - 20060022235 - Solid-state imaging device, production method and drive method thereof, and camera A solid-state imaging device capable of reducing an eclipse (blocking) of an incident light at a circumferential portion of a light receiving portion and realizing a larger angle of view and high-speed driving. A single-layer transfer electrode configuration of forming first transfer electrodes and second transfer electrodes by one polysilicon ... 01/12/06 - 20060006438 - Solid state imaging device and production method therefor Since a main light beam a launches on pixels in a screen peripheral part at an angle of incidence θ, a microlens (260), color filter (250), wires (220, 230 and 240), photodiode (110) and so on are disposed along the direction of incidence in accordance with the angle of incidence ... 12/22/05 - 20050280057 - Semiconductor constructions The invention includes a semiconductor construction having a pair of channel regions that have sub-regions doped with indium and surrounded by boron. A pair of transistor constructions are located over the channel regions and are separated by an isolation region. The transistors have gates that are wider than the underlying ... 12/01/05 - 20050263806 - Die for forming an optical element, and production method as well as regeneration method of the same A die for forming an optical element, comprising: (i) a base member having a base surface which comprises a foundation area including a die surface to form an optical surface of the optical element and a peripheral area provided around the foundation area; (ii) a first layer covering both of ... 11/10/05 - 20050247963 - Image sensor device and manufacturing method thereof An image sensor and a manufacturing method thereof are provided. The image sensor includes a plurality of sensors, an inter-layer dielectric layer formed over the sensors, a first inter-metal dielectric layer formed over the inter-layer dielectric layer, and a plurality of first via walls formed in the first inter-metal dielectric ... 10/27/05 - 20050236653 - Image sensor having notch filter and method for fabricating the same Disclosed are an image sensor and a method for fabricating the same. The method includes the steps of: forming a plurality of photodiodes on a substrate; forming an insulation layer on the plurality of photodiodes; alternatively depositing an oxide layer and a nitride layer plural times on the insulation layer; ... 07/28/05 - 20050161714 - Solid-state imaging device A solid-state imaging device comprises: photoelectric converting regions, wherein each of the photoelectric converting regions includes first photoelectric converting regions and second photoelectric converting regions arranged in row and column directions; and microlenses each of which being formed above and covering each of the first photoelectric converting regions, wherein each ... ### FreshPatents.com Support |