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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Having Insulated Electrode (e.g., Mosfet, Mos Diode) > Light Responsive Or Combined With Light Responsive Device > Imaging Array > Photodiodes Accessed By Fets Photodiodes Accessed By FetsPhotodiodes Accessed By Fets patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/31/08 - 20080023737 - Image sensor and method for manufacturing the same An image sensor and a method for manufacturing the same are provided. In the method, a photoresist is formed on a substrate including a photodiode region and a gate electrode opposite to the photodiode region on the basis of the gate electrode. An oxide layer is formed to a specific ... 01/24/08 - 20080017901 - Solid-state imaging device and control system A solid-state imaging device is provided. The solid-state imaging device includes an imaging region having a plurality of pixels arranged on a semiconductor substrate, in which each of the pixels includes a photoelectric converting portion and a charge converting portion for converting a charge generated by photoelectric conversion into a ... 01/10/08 - 20080006857 - Photodiode with self-aligned implants for high quantum efficiency and method of formation A pinned photodiode with a pinned surface layer formed by a self-aligned angled implant is disclosed. The angle of the implant may be tailored to provide an adequate offset between the pinned surface layer and an electrically active area of a transfer gate of the pixel sensor cell. The pinned ... 01/03/08 - 20080001193 - Image-sensing apparatus In a solid-state image-sensing device, when image sensing is performed, in each pixel, MOS transistors T1 and T5 are turned on and a MOS transistor T6 is turned off so that a MOS transistor T2 operates in a subthreshold region. When resetting is preformed, in each pixel, the MOS transistors ... 12/27/07 - 20070296006 - Structure for pixel sensor cell that collects electrons and holes The present invention relates to a design structure for a pixel sensor cell. The pixel sensor cell approximately doubles the available signal for a given quanta of light. A design structure for a pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of ... 12/27/07 - 20070296005 - Edge illuminated photodiodes This invention comprises plurality of edge illuminated photodiodes. More specifically, the photodiodes of the present invention comprise novel structures designed to minimize reductions in responsivity due to edge surface recombination and improve quantum efficiency. The novel structures include, but are not limited to, angled facets, textured surface regions, and appropriately ... 12/20/07 - 20070290243 - Ultrashallow photodiode using indium The invention provides an imager having a p-n-p photodiode with an ultrashallow junction depth. A p+ junction layer of the photodiode is doped with indium to decrease transient enhanced diffusion effects, minimize fixed pattern noise and fill factor loss. ... 12/06/07 - 20070278544 - Solid state image pickup device inducing an amplifying mos transistor having particular conductivity type semiconductor layers, and camera using the same device To provide an amplification type solid state image pickup device enabling lower noise, higher gain, and higher sensitivity than any conventional amplification type solid state image pickup device. A solid state image pickup device according to the present invention includes an arrangement of a plurality of unit pixels each of ... 11/15/07 - 20070262367 - Image pickup device and camera An object is to provide a solid state image pickup device and a camera which do not worsen a sensor performance in terms of an optical property, a saturated charge amount and the like. A solid state image sensor including a pixel region having a plurality of pixels includes at ... 11/15/07 - 20070262366 - Cmos image sensor and method of manufacturing same Disclosed are a complementary metal oxide semiconductor (CMOS) image sensor and a method of forming the same. The CMOS image sensor comprises a semiconductor substrate having a photodiode region and a transistor region. An optical path is formed between a micro lens on the photodiode region and a photodiode formed ... 11/08/07 - 20070257285 - Silicon-rich-oxide white light photodiode A white light photodiode has a film layer and an ultraviolet (UV) photodiode. The film layer is made of an oxide rich in silicon; and is formed through a chemical vapor deposition. A white light can be generated by exciting the film layer with a UV light from the UV ... 11/01/07 - 20070252184 - Imaging device and manufacturing method thereof Disclosed is an imaging device including a photodiode and floating diffusion region formed to be spaced from each other on a surface layer of a pixel region of a silicon (semiconductor) substrate, and a transfer gate having one of a concave and convex portions toward the floating diffusion region, the ... 11/01/07 - 20070252183 - Ccd type solid-state imaging device and method for manufacturing the same A CCD type solid-state imaging device is provided and includes: photodiodes (PD) in a light receiving area of a semiconductor substrate; vertical charge transfer paths; a horizontal charge transfer path; channel stops including linear high density impurity regions for separating mutually adjoining sets from each other, each set including a ... 11/01/07 - 20070252182 - Buried-gated photodiode device and method for configuring and operating same A 3-T buried-gated photodiode device that is suitable for use in a windowed array. The 3-T buried-gated photodiode device is configured such that the floating diffusion (FD) node of the device is held low when the device is not being specifically addressed, which ensures that the device cannot drive the ... 10/25/07 - 20070246757 - Cmos image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same is disclosed, to improve reliability of a driving part transistor and to improve an output voltage of a photodiode, which includes a semiconductor substrate defined as a photodiode transistor region and a driving part transistor region; a first gate ... 10/25/07 - 20070246756 - Image sensor with soi substrate An imager pixel utilizing a silicon-on-insulator substrate, a photodiode in said substrate below the buried oxide, and a dual contact to said photodiode and methods of forming said imager pixel. The photodiode has an increased fill factor due to its increased size relative to the pixel. ... 10/11/07 - 20070235781 - Solid state image pickup device P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the ... 09/13/07 - 20070210360 - Cmos imager with selectively silicided gate The invention also relates to an apparatus and method for selectively providing a silicide coating over the transistor gates of a CMOS imager to improve the speed of the transistor gates. The method further includes an apparatus and method for forming a self aligned photo shield over the CMOS imager. ... 09/06/07 - 20070205447 - Active pixel sensor with a diagonal active area An imaging device formed as a CMOS semiconductor integrated circuit having two adjacent pixels in a row connected to a common column line. By having adjacent pixels of a row share column lines, the CMOS imager circuit eliminates half the column lines of a traditional imager allowing the fabrication of ... 08/30/07 - 20070200152 - Image sensor with inter-pixel isolation An image sensor with a plurality of photodiodes that each have a first region constructed from a first type of material and a second region constructed from a second type of material. Located adjacent to the first region and between second regions of adjacent photodiodes is a barrier region. The ... 08/23/07 - 20070194357 - Photodiode and method for fabricating same A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film ... 08/16/07 - 20070187732 - Solid-state image sensor using junction gate type field-effect transistor as pixel A source region and drain region are formed in a surface region of a first semiconductor region. Moreover, a second semiconductor region connected to the drain region is formed in the surface region of the first semiconductor region. A third semiconductor region is formed in the first semiconductor region under ... 08/09/07 - 20070181922 - Cmos image sensor A complementary metal oxide semiconductor (CMOS) image sensing device includes a semiconductor substrate; a photodiode defined on the substrate; a gate dielectric layer provided over the photodiode and the substrate; a polysilicon interconnect contacting a given area of the photodiode via an opening in the gate dielectric layer; a reset ... 07/26/07 - 20070170476 - Lateral photodetectors with transparent electrodes A photodetector includes a substrate and a layer of Ge formed on the substrate. A plurality of n-type doped regions and a plurality of p-type doped regions are formed in Ge region. These doped regions formed an alternating pattern. Electrodes are formed on n-type doped regions and on the p-type ... 07/19/07 - 20070164333 - Integrated mis photosensitive device using continuous films An integrated photosensitive device with a metal-insulator-semiconductor (MIS) photodiode constructed with one or more substantially continuous layers of semiconductor material and with a substantially continuous layer of dielectric material. ... 07/12/07 - 20070158713 - Cmos imaging device A CMOS imaging device formed of plural CMOS photosensors arranged in a row and column formation, wherein a first CMOS photosensor and a second CMOS photosensor adjacent with each other in a column direction are formed in a single, continuous device region defined on a semiconductor substrate by a device ... 07/12/07 - 20070158712 - Process for fabricating an integrated circuit comprising a photodiode, and corresponding integrated circuit An integrated circuit includes at least one photodiode associated with a transfer transistor. The photodiode is formed with an upper pn junction. The transfer transistor includes a lateral spacer located on a side facing the photodiode. An upper layer of the upper pn junction includes a lateral surface extension lying ... 07/12/07 - 20070158711 - Cmos sensors having charge pushing regions Structures and method for forming the same. The semiconductor structure comprises a photo diode that includes a first semiconductor region and a second semiconductor region. The first and second semiconductor regions are doped with a first and second doping polarities, respectively, and the first and second doping polarities are opposite. ... 07/05/07 - 20070152250 - Cmos image sensor with backside illumination and method for manufacturing the same A CMOS image sensor includes a plurality of pixel regions formed under a front surface of a substrate, and having photodiodes separated from each other by a field oxide, a multi-layered metal interconnection formed over the pixel regions of the front of the substrate, a bump connected to an uppermost ... 06/28/07 - 20070145447 - Pixel and cmos image sensor including the same A pixel which may prevent the voltage of a floating diffusion region of the pixel from being outside a desired or predetermined driving voltage range by adjusting the equivalent capacitance of the floating diffusion region may be provided. The pixel may include a photodiode which may convert light energy into ... 06/28/07 - 20070145446 - Cmos image sensor A CMOS image sensor includes a photodiode, and a plurality of transistors for transferring charges accumulated at the photodiode to one column line, wherein at least one transistor among the plurality of transistors has a source region wider than a drain region, for increasing a driving current. ... 06/28/07 - 20070145445 - Cmos image sensor and method for manufacturing the same A method for manufacturing a CMOS image sensor is provided. The method includes: forming a photodiode on a semiconductor sustrate; forming a color filter layer on the photodiode; forming a planar layer on the color filter layer; forming a first microlens on the planar layer; and forming a second microlens ... 06/14/07 - 20070131993 - Imaging device Adjacent pixels in a pixel circuit of an imaging device use a primary capacitance, an amplifying transistor, a reset switch and a selection switch in common. Each pixel has a photodiode and a transfer switch having first and second gates provided on the photodiode side and the primary capacitance side, ... 06/14/07 - 20070131992 - Multiple photosensor pixel image sensor A color multiple sensor pixel image sensor includes multiple photo-sensing devices, a combined photosensing and charge storage device, and multiple triggering switches. Each of the multiple photo-sensing devices is structured for conversion of photons of one differentiated color component to photoelectrons. The combined photosensing and charge storage device is structured ... 06/14/07 - 20070131991 - Solid-state imaging device, line sensor and optical sensor and method of operating solid-state imaging device A solid-state imaging device, a line sensor and an optical sensor for enhancing a wide dynamic range while keeping high sensitivity with a high S/N ratio, and a method of operating a solid-state imaging device for enhancing a wide dynamic range while keeping high sensitivity with a high S/N ratio ... 05/31/07 - 20070120161 - Method and structure to reduce optical crosstalk in a solid state imager Methods and structures to reduce optical crosstalk in solid state imager arrays. Sections of pixel material layers that previously would have been etched away and disposed of as waste during fabrication are left as conserved sections. These conserved sections are used to amend the properties and performance of the imager ... 05/31/07 - 20070120160 - Semiconductor device having enhanced photo sensitivity and method for manufacture thereof Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is ... 05/24/07 - 20070114585 - Active photosensitive structure with buried depletion layer An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes depending on the level of accumulated charge in the accumulation region. During an integration period, incident light causes electrons to be accumulated ... 05/24/07 - 20070114584 - Active photosensitive structure with buried depletion layer An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes depending on the level of accumulated charge in the accumulation region. During an integration period, incident light causes electrons to be accumulated ... 05/24/07 - 20070114583 - Complementary metal-oxide-silicon (cmos) image sensor and method of forming the same A complementary metal-oxide silicon (CMOS) image sensor includes a semiconductor layer of a first conductivity type, a plurality of pixels located in the semiconductor layer, a photoelectric converter located in each of the plurality of pixels in the semiconductor layer and includes a region doped with impurities of a second ... 05/24/07 - 20070114582 - Polydiode structure for photo diode An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, ... 05/17/07 - 20070108487 - Cmos (complementary metal oxide semiconductor) type solid-state image pickup device using n/p+ substrate in which n-type semiconductor layer is laminated on p+ type substrate main body A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor ... 05/10/07 - 20070102740 - Deep trench contact and isolation of buried photodetectors The invention provides vertically-stacked photodiodes buried in a semiconductor material that are isolated and selectively contacted by deep trenches. One embodiment of the invention provides a pixel sensor comprising: a plurality of photosensitive elements formed in a substrate, each photosensitive element being adapted to generate photocharges in response to electromagnetic ... 05/10/07 - 20070102739 - Cmos image sensor A CMOS image sensor includes a semiconductor substrate; a pinned photodiode formed in a light-sensing region of the semiconductor substrate, the pinned photodiode comprising a charge-accumulating diffusion region and a surface pinning diffusion region overlying the charge-accumulating diffusion region; a transfer transistor, wherein the transfer transistor has a transfer gate ... 05/10/07 - 20070102738 - Light shield for cmos imager The present invention provides a light shield for shielding the floating diffusion of a complementary metal-oxide semiconductor (CMOS) imager. In accordance with an embodiment of the present invention, there is provided a pixel sensor cell including: a device region formed on a substrate; and a first layer of material forming ... 05/03/07 - 20070096179 - Cmos image sensor and method for manufacturing the same Provided is a CMOS image sensor and method for manufacturing the same. The CMOS image sensor includes a semiconductor substrate, a gate electrode formed on the semiconductor substrate, a conductive diffusion region formed in a photodiode area of the semiconductor substrate, a floating diffusion region formed in a transistor region ... 05/03/07 - 20070096178 - Rear-illuminated -type photodiode array A rear-illuminated-type photodiode array has (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode that is placed at the rear side of the semiconductor substrate and has openings arranged one- or two-dimensionally, (c) an antireflective coating provided at each of the openings of the first-electroconductive-type electrode, (d) a first-electroconductive-type absorption ... 05/03/07 - 20070096177 - Semiconductor chip having a photodiode, semiconductor device and manufacturing method thereof A semiconductor chip that has a photodiode formed on it, a semiconductor device including the semiconductor chip, and manufacturing methods thereof. A second semiconductor region 11 is formed in light-receiving region R of first semiconductor region 10. First bumps 12 are formed outside light-receiving region R. Second bump 13 is ... 04/26/07 - 20070090424 - Cmos image sensor and method of manufacturing the same Disclosed herein are a CMOS image sensor and a method of manufacturing the same, which can reduce current leakage through a plug connecting a photodiode and a transfer transistor to each other, and thereby provide low dark current levels. The CMOS image sensor includes a first epitaxial layer on or ... 04/26/07 - 20070090423 - Cmos image sensor A complementary metal-oxide semiconductor (CMOS) image sensor includes a photodiode, a gate pattern of a transfer transistor contacting one side of the photodiode, a gate pattern of a drive transistor disposed to have a predetermined spacing distance from the gate pattern of the transfer transistor, and a floating diffusion node ... 04/19/07 - 20070085119 - Cmos image sensor and method for manufacturing the same Disclosed are a CMOS image sensor and a method for manufacturing the same, for reducing or preventing damage to a photodiode and improving a pixel design margin to achieve scale down of a pixel. The CMOS image sensor includes an isolation layer in a semiconductor substrate, a gate electrode crossing ... 03/29/07 - 20070069262 - Multi-layer interconnect with isolation layer An integrated circuit interconnect is fabricated by using a mask to form a via in an insulating layer for a conductive plug. After the plug is formed in the via, a thin (e.g., <100 nm) isolation layer is deposited over the resulting structure. An opening is created in the isolation ... 03/29/07 - 20070069261 - Cmos image sensor and a method for manufacturing the same A CIS and a method for manufacturing the same are provided. The CIS includes a photodiode formed on a substrate; an interlayer insulation layer formed on an entire surface of the substrate including the photodiode; a color filter layer formed on the interlayer insulation layer to pass light in a ... 03/29/07 - 20070069260 - Photodetector structure for improved collection efficiency An image sensor with an image area having a plurality of photodetectors of a first conductivity type includes a substrate of the second conductivity type; a first layer of the first conductivity type substantially spanning an area of each photodetector; wherein the first layer abuts each photodetector and is between ... 03/22/07 - 20070063235 - Cmos image sensor and method of manufacturing the same In a CMOS image sensor manufacturing process, heavily doped p type impurity ions (for example, B) are implanted in a dummy moat region when the heavily doped p type impurity ions is implanted in a PMOS transistor region, so that metal ion contamination is removed. Accordingly, a CMOS image sensor ... 03/15/07 - 20070057298 - Pixel with strained silicon layer for improving carrier mobility and blue response in imagers An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in imaging devices. ... 03/08/07 - 20070051990 - Cmos image sensor and method for fabricating the same A CMOS image sensor and a method of fabricating the same are provided. The CMOS image sensor includes: a semi conductor substrate of a first conductivity type having a photodiode region and a transistor region defined therein; a gate electrode formed above the transistor region of the semiconductor substrate with ... 03/01/07 - 20070045684 - Image sensor and method for fabricating the same An image sensor includes a trench formed by a shallow trench isolation (STI) process, a channel stop layer formed over a substrate in the trench, an isolation structure filled in the trench, and a photodiode formed in the substrate adjacent to a sidewall of the trench. In more detail of ... 03/01/07 - 20070045683 - Light reflectivity controlled photodiode cell, and method of manufacturing the same The photodiode cell (1) includes at least one photosensitive area (3), made in a silicon semiconductor substrate (2), for receiving light, particularly coherent light, and a passivation layer and a dielectric layer (4). The passivation layer is composed of at least a first silicon oxide layer (5) and a second ... 03/01/07 - 20070045682 - Imager with gradient doped epi layer A pixel cell including a substrate of a first conductivity type over an epitaxial layer of a second conductivity type. The epitaxial layer has a dopant gradient, wherein the dopant concentration decreases from a surface of the epitaxial layer adjacent the substrate to the surface of the epitaxial layer opposite ... 03/01/07 - 20070045681 - Efficient charge transferring in cmos imagers Methods for operating a pixel cell include efficient transferring of photo-charges using multiple pulses to a transistor transfer gate during a charge integration period for an associated photosensor. The pixel cell can be operated with efficient transfer characteristics in either normal or high dynamic range (HDR) mode. The high dynamic ... 02/15/07 - 20070034917 - Dual capacitor structure for imagers CMOS and CCD imaging devices comprising different in-pixel capacitors and peripheral capacitors and methods of formation are disclosed. The capacitors used in periphery circuits have different requirements from the capacitors used in the pixel itself. Dual stack capacitors comprising two dielectric layers may be provided to achieve low leakage and ... 02/15/07 - 20070034916 - Cmos image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same are provided. A CMOS image sensor includes: a plurality of photodiodes a predetermined distance apart on a semiconductor substrate; an insulation layer on an entire surface of the semiconductor substrate; a passivation layer on the insulation layer; a plurality ... 02/08/07 - 20070029591 - Photodiode array and production method thereof, and radiation detector A photodiode array 1 is provided with an n-type silicon substrate 3. A plurality of photodiodes 4 are formed in array on the opposite surface side to an incidence surface of light L to be detected, in the n-type silicon substrate 3. Spacers 6 having a predetermined height are provided ... 02/01/07 - 20070023804 - Double pinned photodiode for cmos aps and method of formation A pinned photodiode, which is a double pinned photodiode having increased electron capacitance, and a method for forming the same are disclosed. The invention provides a pinned photodiode structure comprising a substrate base over which is a first layer of semiconductor material. There is a base layer of a first ... 02/01/07 - 20070023803 - Cmos image sensor and method of fabricating the same A CMOS image sensor and a method of fabricating the same are provided. The CMOS image sensor includes a photodiode region and a transistor region that have a first concentration and are formed on an active region of a first conductive type semiconductor substrate. Additionally, the CMOS image sensor includes ... 02/01/07 - 20070023802 - Cmos image sensor and method of fabricating the same In a CMOS image sensor and method of fabricating the same, the CMOS image sensor is comprised of a pixel array generating image signals and a peripheral circuit processing the image signals. In the method, a substrate is provided having a pixel region and a peripheral circuit region. A photo-receiving ... 02/01/07 - 20070023801 - Stacked pixel for high resolution cmos image sensor Provided is a solid-state CMOS image sensor, specifically a CMOS image sensor pixel that has stacked photo-sites, high sensitivity, and low dark current. In an image sensor including an array of pixels, each pixel includes: a standard photo-sensing and charge storage region formed in a first region under a surface ... 02/01/07 - 20070023800 - Semiconductor imaging device and fabrication process thereof A semiconductor imaging device includes a photodetection region formed of a diffusion region of a first conductivity type formed in an active region of a silicon substrate at a first side of a gate electrode such that a top part thereof is separated from a surface of the silicon substrate ... 02/01/07 - 20070023799 - Structure and method for building a light tunnel for use with imaging devices A pixel cell and imager device, and method of forming the same, where the pixel cell has a plurality of metallization and via layers formed over a photosensitive region. The metallization and via layers form a step-like light tunnel structure that augments the photosensitive region's ability to capture light impinging ... 01/25/07 - 20070018213 - Cmos image sensor and method of fabricating the same A complementary metal-oxide semiconductor (CMOS) image sensor and a method of fabricating the same arc disclosed. In a complementary metal-oxide semiconductor (CMOS) image sensor including a photodiode receiving irradiated light and generating electric charges, a plurality of conductive circuits each formed in different layers, a plurality of interlayer dielectrics insulating ... 01/25/07 - 20070018212 - Photodiode array and production method thereof, and radiation detector A photodiode array 1 is provided with an n-type silicon substrate 3. A plurality of photodiodes 4 are formed in array on the opposites surface side to an incident surface of light L to be detected, in the n-type silicon substrate 3. A depression 6 with a predetermined depth more ... 01/18/07 - 20070012971 - Cmos image sensor and manufacturing method thereof Provided is a CMOS image sensor and a manufacturing method thereof. The CMOS image sensor includes a gate electrode, a photodiode, a transistor region, and a light blocking material. The gate electrode is formed on a semiconductor substrate with an intervening gate insulating layer. The photodiode region is formed on ... 01/18/07 - 20070012970 - Image sensor with soi substrate An imager pixel utilizing a silicon-on-insulator substrate, a photodiode in said substrate below the buried oxide, and a dual contact to said photodiode and methods of forming said imager pixel. The photodiode has an increased fill factor due to its increased size relative to the pixel. ... 01/11/07 - 20070007563 - Silicon-based resonant cavity photodiode for image sensors An imager with pixels having a resonant-cavity photodiode. The resonant cavity photodiode increases absorption of light having long wavelengths. A trench is formed for the photodiode and reflective film is grown on the bottom of the trench. The reflective film reflects light that is not initially absorbed back to the ... 01/11/07 - 20070007562 - Image sensor and method for fabricating the same An image sensor includes a first conductivity type substrate with a trench formed in a predetermined portion thereof, a second conductivity type impurity region formed in the first conductivity type substrate below the trench and being a part of a photodiode, a second conductivity type first epitaxial layer filling the ... 01/11/07 - 20070007561 - Discharge circuit for a word-erasable flash memory device A non-volatile memory device is proposed. The memory device includes a plurality of blocks of memory cells, each block having a common biasing node for all the memory cells of the block, biasing means for providing a biasing voltage, and selection means for selectively applying the biasing voltage to the ... 12/28/06 - 20060289912 - Cmos image sensor and manufacturing method thereof Provided are a CMOS image sensor and a manufacturing method thereof. The CMOS image sensor incorporates an interlayer insulating layer, a color filter layer, a first planarizing layer, and at least one microlens. The interlayer insulating layer is formed on a semiconductor substrate having at least one photodiode. The color ... 12/28/06 - 20060289911 - Cmos image sensor Disclosed is a CMOS image sensor, comprising a photodiode formed in a substrate, a floating diffusion region formed in the substrate in a manner such that it is distanced from the photodiode surrounds the photodiode and a transfer gate formed in a manner such that it is distanced from the ... 12/28/06 - 20060289910 - Image sensor and method for fabricating the same A complementary metal oxide semiconductor (CMOS) image sensor capable of improving photosensitivity and a signal to noise ratio and a method for fabricating the same are provided. An image sensor for embodying the colors of red, green and blue includes: a plurality of photodiodes formed on a substrate and collecting ... 12/21/06 - 20060284223 - Cmos image sensor and manufacturing method thereof Disclosed are a CMOS image sensor and manufacturing method thereof. The method includes the steps of forming a lower insulating layer and an upper insulating layer on an entire surface of a semiconductor substrate in successive order, the substrate having an isolation layer defining an active region comprising a photodiode ... 12/21/06 - 20060284222 - Wide dynamic range sensor having a pinned diode with multiple pinned voltages A pixel cell has controlled photosensor anti-blooming leakage by having dual pinned voltage regions, one of which is used to set the anti-blooming characteristics of the photosensor. Additional exemplary embodiments also employ an anti-blooming transistor in conjunction with the dual pinned photosensor. Other exemplary embodiments provide a pixel with two ... 12/14/06 - 20060278905 - Cmos pixel with dual gate pmos A pixel circuit with a dual gate PMOS is formed by forming two P+ regions in an N− well. The N− well is in a P+ type substrate. The two P+ regions form the source and drain of a PMOS transistor. The PMOS transistors formed within the N− well will ... 12/07/06 - 20060273363 - Method for fabricating cmos image sensor A method for fabricating a CMOS image sensor is provided. The method includes: forming a gate electrode with a gate insulating layer interposed on a transistor region of a semiconductor substrate having an active region defined by a photo diode and a transistor region; forming a first impurity region of ... 12/07/06 - 20060273362 - Photoelectric conversion layer, photoelectric conversion device and imaging device, and method for applying electric field thereto wherein R11 to R14 each independently represents a hydrogen atom or a substituent; X11 and X12 each independently represents a substituted or unsubstituted carbon atom, a substituted or unsubstituted nitrogen atom, an oxygen atom, or a sulfur atom; and Y11 to Y14 each independently represents a substituted or unsubstituted carbon ... 12/07/06 - 20060273361 - Solid state imaging device and solid state imaging element Each of three light receiving sections has a P-type well having a P+-type layer and an N-type layer formed therein. The P+-type layer is diffused from substrate surface to depth d1. A PN junction forming portion of the N-type layer is diffused from depth d1 to depth d2 which is ... 11/23/06 - 20060261386 - Solid-state imaging device and manufacturing method of the same An inversion layer is formed in a part as a boundary between (a) a defect control layer formed along a trench surface for isolating pixel calls and (a) a photo diode. The defect control layer is a P-type, and the photo diode and the inversion layer are N-type. Here, an ... 11/23/06 - 20060261385 - Phase shift transparent structures for imaging devices An imaging device having a pixel cell with a transparent structure capable of shifting the phase of a wavelength above pixel circuitry, thereby reducing noise within a pixel cell, and also reducing the amount of cross-talk between pixel cells. ... 11/16/06 - 20060255382 - Pinned photodiode structure and method of formation An imager having a photodiode with a shallow doping profile with respect to the top surface of a substrate is disclosed. An imager with a graded pinned surface layer, self-aligned to a gate stack is provided. A photodiode with a shallow doping profile with respect to the top surface of ... 11/16/06 - 20060255381 - Pixel with gate contacts over active region and method of forming same The invention relates to a pixel and imager device, and method of forming the same, where the contacts to the gates of the transistors of the pixel are located over the active region of the pixel, e.g., the channel regions of the transistor gates. The location of the transistor gate ... 11/09/06 - 20060249767 - Pinned photodiode structure and method of formation An imager having a photodiode with a shallow doping profile with respect to the top surface of a substrate is disclosed. An imager with a graded pinned surface layer, self-aligned to a gate stack is provided. A photodiode with a shallow doping profile with respect to the top surface of ... 11/09/06 - 20060249766 - Pinned photodiode structure and method of formation An imager having a photodiode with a shallow doping profile with respect to the top surface of a substrate is disclosed. An imager with a graded pinned surface layer, self-aligned to a gate stack is provided. A photodiode with a shallow doping profile with respect to the top surface of ... 11/09/06 - 20060249765 - Mos or cmos sensor with micro-lens array A MOS or CMOS sensor with a multi-layer photodiode layer covering an array of active pixel circuits. The multi-layer photodiode layer of each pixel is fabricated as continuous layers of charge generating material on top of the MOS and/or CMOS pixel circuits so that extremely small pixels are possible with ... 10/19/06 - 20060231875 - Dual conversion gain pixel using schottky and ohmic contacts to the floating diffusion region and methods of fabrication and operation The exemplary embodiments provide an imager with dual conversion gain charge storage and thus, improved dynamic range. A dual conversion gain element (e.g., Schottky diode) is coupled between a floating diffusion region and a respective capacitor. The dual conversion gain element switches in the capacitance of the capacitor, in response ... 10/05/06 - 20060220079 - Semiconductor light receiving device and method of manufacturing the same A semiconductor light receiving device includes a plurality of photodiode units, each of which is configured to convert a received light into an electric signal; and a separating unit configured to electrically separates the plurality of photodiode units from each other. The impurity concentration of a surface portion of the ... 10/05/06 - 20060220078 - Photodiode with controlled current leakage The present invention is directed towards radiation detectors and methods of detecting incident radiation. In particular the present invention is directed towards photodiodes with controlled current leakage detector structures and a method of manufacturing photodiodes with controlled current leakage detector structures. The photodiodes of the present invention are advantageous in ... 09/28/06 - 20060214201 - Method and apparatus for reducing imager floating diffusion leakage An imager having reduced floating diffusion leakage and a mechanism for improving the storing of collected charge is described. A polysilicon contact is provided between a floating diffusion region and a gate of a source follower output transistor, with the contact also electrically connected to a storage capacitor. The storage ... 09/28/06 - 20060214200 - Junction semiconductor device and method for manufacturing the same A junction semiconductor device having a drain region comprising a low-resistance layer of a first conductive type formed on one surface of a semiconductor crystal, a source region comprising a low-resistance layer of a first conductive type formed on the other surface of the semiconductor crystal, a gate region of ... 09/28/06 - 20060214199 - Solid-state image sensing device A solid-state image sensing device provided with photoelectric conversion films stacked above a semiconductor substrate, comprising: first impurity regions as defined herein; second impurity regions as defined herein; signal charge reading regions as defined herein; and third impurity regions as defined herein. ... 09/21/06 - 20060208292 - Image pickup device and camera with expanded dynamic range The image pickup device of the invention has a path deeper in a semiconductor substrate, than a region wherein a channel is formed, upon turning on a first MOS transistor, under a gate thereof. The path is arranged by forming a P-type layer for forming a potential barrier, within a ... 09/21/06 - 20060208291 - Solid state image pickup device and camera A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a ... 09/21/06 - 20060208290 - Semiconductor light emitting devices and methods A method for producing an optical output, including the following steps: providing first and second electrical signals; providing a bipolar light-emitting transistor device that includes collector, base, and emitter regions; providing a collector electrode coupled with the collector region and an emitter electrode coupled with the emitter region, and coupling ... 09/07/06 - 20060197127 - Semiconductor device An object is to increase the amount of substrate noise absorbed in a guard ring, and to prevent a malfunction caused by the substrate noise in a semiconductor device including an SOI substrate provided with the guard ring. Then, there is provided a semiconductor device, including: an SOI substrate in ... 08/31/06 - 20060192234 - Solid-state imaging device Pixels have a photodiode 1, a transfer gate electrode 2 for transferring charges accumulated in the photodiode 1, a floating diffusion section 3 for accumulating the charge transferred by the transfer gate electrode 2, an amplification transistor 15 in which a gate electrode is connected to the floating diffusion section ... 08/31/06 - 20060192233 - Body potential imager cell An imaging circuit, an imaging sensor, and a method of imaging. The imaging cell circuit including one or more imaging cell circuits, each imaging cell circuit comprising: a transistor having a floating body for holding charge generated in the floating body in response to exposure of the floating body to ... 08/24/06 - 20060186442 - Image sensor and method for fabricating the same An image sensor and a method for fabricating the image sensor are provided. The image sensor includes a doped layer of a first conductivity type formed in a photodiode region defined in a semiconductor substrate, a first epitaxial layer of a second conductivity type and a second epitaxial layer of ... 08/10/06 - 20060175641 - Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels An image pixel cell with a doped, hydrogenated amorphous silicon photosensor, raised above the surface of a substrate is provided. Methods of forming the raised photosensor are also disclosed. Raising the photosensor increases the fill factor and the quantum efficiency of the pixel cell. Utilizing hydrogenated amorphous silicon decreases the ... 07/20/06 - 20060157759 - Image pickup device, its control method, and camera An image pickup device, wherein a part of the carriers overflowing from the photoelectric conversion unit for a period of photoelectrically generating and accumulating the carriers may be flowed into the floating diffusion region, and a pixel signal generating unit generating a pixel signal according to the carriers stored in ... 07/20/06 - 20060157758 - Image sensor and pixel having an optimized floating diffusion An active pixel includes a a photosensitive element formed in a semiconductor substrate. A transfer transistor is formed between the photosensitive element and a floating diffusion and selectively operative to transfer a signal from the photosensitive element to the floating diffusion. The floating diffusion is formed from an n-type implant ... 07/06/06 - 20060145213 - Cmos image sensor and method for manufacturing the same A CMOS image sensor and a method for manufacturing the same improve light-receiving efficiency and maintain a margin in the design of a metal line. The CMOS image sensor includes a transparent substrate including an active area having a photodiode region and a transistor region and a field area for ... 07/06/06 - 20060145212 - Cmos image sensor and method for fabricating the same A CMOS image sensor and fabricating method can reduce leakage current of a photodiode reduced by configuring a triangular shape of a photodiode area to minimize an interface contacting the STI or performing deuterium annealing to remove dangling bonds from an interface contacting with oxide. The CMOS image sensor includes ... 07/06/06 - 20060145211 - Cmos image sensor and method for manufacturing the same A CMOS image sensor and a method for manufacturing the same are provided, in which a nitride layer for passivation is used as a microlens to reduce topology. The CMOS image sensor includes an upper metal layer partially deposited on a dielectric layer; a first nitride layer deposited on the ... 07/06/06 - 20060145210 - Cmos image sensor A CMOS image sensor includes a photo-transistor capable of performing photo-sensing and active amplification. The photo-transistor is installed to improve low illustration characteristics while maintaining an existing pixel operation. The CMOS image sensor also includes a reset transistor connected to the photo-transistor and adapted to perform a reset function, a ... 07/06/06 - 20060145209 - Photodiode of cmos image sensor and method for manufacturing the same A photodiode of a CMOS image sensor and a method for manufacturing the same are provided, in which ions implanted in the vicinity of a device isolation film are prevented from being diffused into a photodiode region to reduce a dark current. The photodiode of a CMOS image sensor includes ... 07/06/06 - 20060145208 - Photodiode in cmos image sensor and method of manufacturing the same A CMOS image sensor is provided in which a P-type impurity containing layer is formed in a blue photodiode region and a P-type diffusion region is formed by diffusion such that a junction depth is reduced and blue light is efficiently received to improve image quality. A method of manufacturing ... 07/06/06 - 20060145207 - Image sensor capable of increasing photosensitivity and method for fabricating the same An image sensor capable of overcoming a decrease in photo sensitivity resulted from using a single crystal silicon substrate, and a method for fabricating the same are provided. An image sensor includes a single crystal silicon substrate, an amorphous silicon layer formed inside the substrate, a photodiode formed in the ... 07/06/06 - 20060145206 - Cmos image sensor and method for fabricating the same A CMOS image sensor having a transistor and a method for fabricating the same is provided. The CMOS image sensor includes a semiconductor substrate; a gate electrode of the transistor formed on the semiconductor substrate; and an ion-implantation blocking layer formed as part of the gate electrode. The CMOS image ... 06/29/06 - 20060138495 - Method and apparatus for collecting photons in a solid state imaging sensor A photon collector has a reflecting metal layer to increase photon collection efficiency in a solid state imaging sensor. The reflecting metal layer reflects incident light internally to a photosensor. A plurality of photon collectors is formed in a wafer substrate over an array of photosensors. The photon collector is ... 06/29/06 - 20060138494 - Photodiode in cmos image sensor and fabricating method thereof A photodiode in a CMOS image sensor and fabricating method thereof are disclosed, by which the charge accumulation capacity is enhanced by enlarging a size of a photodiode area. The sensor includes a first epitaxial layer on a semiconductor substrate, a first photodiode area in the first epitaxial layer, a ... 06/29/06 - 20060138493 - Cmos image sensor and method for fabricating the same A CMOS image sensor includes a first conductive type semiconductor substrate defined by a photodiode area and a transistor area, a trench formed in the semiconductor substrate corresponding to a transfer transistor of the transistor area, a gate electrode of the transfer transistor, formed in the trench, a second conductive ... 06/29/06 - 20060138492 - Cmos image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same are disclosed, in which an impurity ion area is formed in a semiconductor substrate to form a transfer path for optical charges. Dead zone and dark current characteristics are thereby simultaneously improved. The CMOS image sensor includes a first ... 06/29/06 - 20060138491 - Method for fabricating cmos image sensor A CMOS image sensor and a method for fabricating the same are disclosed, in which transfer characteristics are improved. The method includes forming a photodiode region and a second conductive type ion region on a surface of a first conductive type substrate by implanting a second conductive type impurity ion ... 06/29/06 - 20060138490 - Cmos image sensor and method for fabricating the same A method for fabricating a CMOS image sensor includes forming a photodiode region, a gate electrode, an interlayer dielectric layer, a metal line, and a passivation layer on a semiconductor substrate having a pixel array region and a peripheral circuit region, forming a color filter layer having a plurality of ... 06/29/06 - 20060138489 - Active pixel sensor with coupled gate transfer transistor A complementary metal-oxide semiconductor (CMOS) active pixel sensor includes a photodiode, a transfer transistor with a coupled gate, a reset transistor and a signal transfer circuit, where the photodiode generates electric charges in response to incident light, the transfer transistor transfers the electric charges integrated in the photodiode to a ... 06/29/06 - 20060138488 - Image sensor test patterns for evaluating light-accumulating characteristics of image sensors and methods of testing same An image sensor test pattern provides time efficient optical testing of CMOS image senors at a single luminous intensity. These test patterns include at least first and second arrays of pixels having different light-accumulating characteristics. The different light-accumulating characteristics may be achieved multiple different ways. In some cases, the photodiodes ... 06/29/06 - 20060138487 - Cmos image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same are disclosed, in which color filter layers are formed after microlenses are formed, to simplify process steps and maximize transmission efficiency of light, thereby improving performance of the image sensor. The CMOS image sensor includes a plurality of photodiodes ... 06/29/06 - 20060138486 - Cmos image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same forms a trench-shaped transfer gate that serves to better transfer electrons generated by light incident on photodiodes, thus obtaining improved transfer characteristics. The CMOS image sensor includes a semiconductor substrate having at least one active region defined by a ... 06/29/06 - 20060138485 - Cmos image sensor and method for fabricating the same A CMOS image sensor that includes a semiconductor substrate with a plurality of photodiodes arranged at fixed intervals on the semiconductor substrate. A light-shielding layer partially overlaping the plurality of photodiodes and an insulating interlayer are formed on an entire surface of the semiconductor substrate including the plurality of photodiodes. ... 06/22/06 - 20060131625 - Cmos image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same in which color balance is enhanced by forming photodiodes to have a depth varied according to the wavelength of incident light to be received through a color filter layer. The predetermined depth varies, from shallow to deep, as the ... 06/22/06 - 20060131624 - Solid-state imaging device Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the ... 06/15/06 - 20060124977 - Solid-state image sensing device and camera system using the same A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor ... 06/15/06 - 20060124976 - Recessed gate for an image sensor A novel image sensor cell structure and method of manufacture. The imaging sensor comprises a substrate, a gate comprising a dielectric layer and gate conductor formed on the dielectric layer, a collection well layer of a first conductivity type formed below a surface of the substrate adjacent a first side ... 06/08/06 - 20060118837 - Active pixel sensor having honeycomb structure An active pixel sensor of the present invention includes photo diodes with at least five side such as six sides arranged in a honeycomb structure with sharing of a floating diffusion (FD) region for increased fill factor. In addition, with sharing of transistor devices by multiple photo diodes, the fill ... 06/08/06 - 20060118836 - Image sensor pixel having photodiode with indium pinning layer An active pixel using a pinned photodiode with a pinning layer formed from indium is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N− region formed within a P-type region. A pinning layer formed from indium is then formed at the surface of ... 06/08/06 - 20060118835 - Predoped transfer gate for an image sensor A novel Active Pixel Sensor (APS) cell structure and method of manufacture. Particularly, an image sensor APS cell having a predoped transfer gate is formed that avoids the variations of Vt as a result of subsequent manufacturing steps. According to the preferred embodiment of the invention, the image sensor APS ... 05/25/06 - 20060108618 - Cmos image sensor having buried channel mos transistors A CMOS image sensor having buried channel MOS transistors is disclosed. The CMOS image sensor includes a photo converting device and a source follower transistor. The photo converting device generates a current signal and changes a voltage of a floating node in response to energy of an incident light. The ... 05/18/06 - 20060102938 - Cmos image sensor providing uniform pixel exposure and method of fabricating same An CMOS image sensor includes a photodiode region generating electrical charges in response to incident light received thereat. In one example, the CMOS image sensor further includes first and second transfer gates adapted to prevent or substantially prevent the electrical charges from overflowing into a floating diffusion region or a ... 05/11/06 - 20060097297 - Cmos image sensor and method for fabricating the same A CMOS image sensor and fabricating method thereof enhances a light-receiving capability of an image sensor by preventing poor light-refraction characteristics at the peripheral part of a microlens. The CMOS image sensor includes at least one microlens formed by anistropic etching to have a focusing centerline, a central lens portion, ... 05/11/06 - 20060097296 - Cmos image sensor and method of operating the same A complementary metal oxide semiconductor (CMOS) image sensor and a method for operating the same are provided. The CMOS image sensor includes a pixel array unit having a matrix of pixels, wherein each pixel comprises a charge transfer element for transferring charge collected in a photoelectric conversion element to a ... 05/11/06 - 20060097295 - Cmos image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same are disclosed, in which the fabrication costs are reduced by reducing the number of photolithographic processes and yield is improved by obviating an alignment problem between color filter layers and microlenses. In one embodiment, the CMOS image sensor includes ... 04/27/06 - 20060086957 - Cmos image sensor using reflection grating and method for manufacturing the same A CMOS image sensor having a reflection grating adapted to reflect and refract light not parallel to an optical axis is disclosed. The CMOS image sensor includes at least one photodiode, a photo-shielding film, a first interlayer insulation film, a color filter, a second interlayer insulation film, and at least ... 04/20/06 - 20060081900 - Pixel cell having a grated interface A pixel cell having a photosensor within a silicon substrate; and an oxide layer provided over the photosensor, the oxide layer having a grated interface with said silicon substrate, and a method of fabricating the pixel cell having a grated interface. ... 04/13/06 - 20060076589 - Pin photodiode structure and fabrication process for reducing dielectric delamination A PIN photodiode, and a method of manufacturing a PIN photodiode that reduces dielectric delamination and increases device reliability. The process proceeds by forming an first type electrode layer on the substrate; forming an intrinsic layer of the first type electrode layer; forming a second type electrode layer on the ... 04/13/06 - 20060076588 - Image sensor and pixel having a non-convex photodiode In a photodiode used in a pixel of an image sensor, the area of interface between an N-type region and a P-type region is increased, such as through the use of an interstitial P+-type region or an interstitial P-type region. By increasing the interface area, greater well capacity can be ... 04/06/06 - 20060071254 - High dynamic range image sensor A pixel cell with controlled leakage is formed by modifying the location and gate profile of a high dynamic range (HDR) transistor. The HDR transistor may have a dual purpose, acting as both a leaking transistor and either a transfer gate or a reset gate. Alternatively, the HDR transistor may ... 03/30/06 - 20060065915 - Sold-state imaging devices A solid-state imaging device includes: a substrate; a photoelectric transducer that is provided within the substrate and generates light-generated charge in accordance with incident light; a floating diffusion that retains the light-generated charge generated from the photoelectric transducer; a transfer and retention unit that is provided between the photoelectric transducer ... 03/23/06 - 20060060898 - Cmos image sensor and a method for fabricating the same A CMOS image sensor and method for fabricating the same is disclosed that reconditions, repairs and/or protects a surface of a photodiode area and improves characteristics of the image sensor. The method includes forming a photodiode area and a plurality of transistors, implanting a predetermined ion into a surface of ... 03/23/06 - 20060060897 - Solid state imaging system and driving method thereof A solid state imaging system having, in a substrate, a plurality of accumulation wells for accumulating photogenerated charge generated on a photoelectric conversion area according to an incident light, the plural photoelectric conversion areas being aligned on the substrate in a two-dimensional matrix, the solid state imaging system including: a ... 03/16/06 - 20060054946 - Cmos image sensor and method of manufacturing same Disclosed are a complementary metal oxide semiconductor (CMOS) image sensor and a method of forming the same. The CMOS image sensor comprises a semiconductor substrate having a photodiode region and a transistor region. An optical path is formed between a micro lens on the photodiode region and a photodiode formed ... 03/09/06 - 20060049439 - Image device and method of fabricating the same An image device includes a substrate in which a light receiving element is formed, an interlayer dielectric structure which is formed on the substrate and has a cavity over the light receiving element, a transparent dielectric layer which fills the cavity and has a lens-shaped portion protruding beyond an upper ... 03/09/06 - 20060049438 - Active pixel array with matching analog-to-digital converters for image processing An imaging device includes a plurality of photo-diodes arranged in a plurality of columns on a single Complementary Metal Oxide Semiconductor (CMOS) substrate. A plurality of analog-to-digital converters (ADCs) corresponding to the plurality of columns of photo-diodes are arranged on the substrate, with each ADC having an input coupled to ... 03/09/06 - 20060049437 - Cmos image sensors and methods for fabricating the same Complementary metal-oxide semiconductor (CMOS) image sensors and methods of fabricating the same are disclosed. In one example, the method includes forming at least a first pad layer and a second pad layer on a p-type semiconductor substrate having an active area and a device dividing area defined thereon, removing the ... 03/02/06 - 20060043442 - Photoelectric conversion device, method for manufacturing the same and image pickup system An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion ... 03/02/06 - 20060043441 - Device for subtracting or adding charge in a charge-coupled device The present invention provides an apparatus for adding or subtracting an amount charge to or from a charge packet in a CCD as the packet traverses the CCD. The apparatus uses a “wire transfer” device structure to perform the addition or subtraction of charge during the charge packets traversal across ... 02/23/06 - 20060038208 - Apparatus and method of image processing to avoid image saturation An imaging device includes a plurality of photo-diodes that operate as optical pixels arranged in a plurality of columns on a single CMOS substrate. The outputs of the multiple pixel sensors, or photo-diodes, are examined to determine if a one pixel, or a region of pixels are in saturation. If ... 02/23/06 - 20060038207 - Wide dynamic range sensor having a pinned diode with multiple pinned voltages A pixel cell has controlled photosensor anti-blooming leakage by having dual pinned voltage regions, one of which is used to set the anti-blooming characteristics of the photosensor. Additional exemplary embodiments also employ an anti-blooming transistor in conjunction with the dual pinned photosensor. Other exemplary embodiments provide a pixel with two ... 02/16/06 - 20060033132 - Low dark current image sensors with epitaxial sic and/or carbonated channels for array transistors A pixel cell having a substrate with a isolation channel formed of higher carbon concentrate such as SiC or carbonated silicon. The channel comprising SiC or carbonated silicon is provided over the substrate of the pixel cell to reduce the dark current leakage. ... 02/16/06 - 20060033131 - Complementary metal oxide semiconductor image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same is disclosed, to enhance the image-sensing efficiency by forming a concave lens area for improving the light-condensing efficiency in a planarization layer formed before a micro-lens array, in which the CMOS image sensor includes a plurality of photosensitive devices ... 02/02/06 - 20060022234 - Reduced area imaging device incorporated within wireless endoscopic devices A reduced area imaging device is provided for use in medical or dental instruments such as an endoscope. In a first embodiment of the endoscope, connections between imaging device elements and between a video display is achieved by hard-wired connections. In a second embodiment of the endoscope, wireless transmission is ... 02/02/06 - 20060022233 - Cmos imager with selectively silicided gates The invention also relates to an apparatus and method for selectively providing a silicide coating over the transistor gates of a CMOS imager to improve the speed of the transistor gates. The method further includes an apparatus and method for forming a self aligned photo shield over the CMOS imager. ... 01/19/06 - 20060011957 - Information detecting device for photo film A photo film scanner for photo film having an image frame has plural light sources, which apply illuminating light to the photo film, and include a multi-chip LED packages having plural chips for emitting the illuminating light at wavelengths different from one another. Plural photo receptors receive light from the ... 01/19/06 - 20060011956 - Solid-state image sensor The solid-state image sensor includes a pixel part 10, an analog circuit part 12, a digital circuit part 14 and an input/output circuit part 16. The digital circuit part 14 includes a first well 42c of a second conduction type formed in a second region of a semiconductor substrate 20 ... 01/19/06 - 20060011955 - Pixel cell having a grated interface A pixel cell having a photosensor within a silicon substrate; and an oxide layer provided over the photosensor, the oxide layer having a grated interface with said silicon substrate, and a method of fabricating the pixel cell having a grated interface. ... 01/05/06 - 20060001062 - Method for fabricating cmos image sensor A method for fabricating a CMOS image sensor is disclosed, to minimize the leakage current and to improve the yield, which includes the steps of preparing a semiconductor substrate including a peripheral circuit and a pixel array, wherein the pixel array is comprised of a photodiode and a readout circuit; ... 01/05/06 - 20060001061 - Solid-state image-sensing device and camera provided therewith By feeding an appropriate voltage as a signal φTX to a transfer gate TG, a MOS transistor T1 , is operated in a threshold region. A potential linearly or natural logarithmically converted by a buried photodiode PD is transferred to an N-type floating diffusion layer FD so as to be ... 01/05/06 - 20060001060 - Pixel cell with a controlled output signal knee characteristic response A pixel cell with controlled leakage is formed by modifying the location and gate profile of a high dynamic range (HDR) transistor. The HDR transistor may have the gate profile of a transfer gate or a reset gate. The HDR transistor may be located on a side of the photodiode ... 01/05/06 - 20060001059 - Transparent conductor based pinned photodiode A pinned photodiode with improved short wavelength light response. In exemplary embodiments of the invention, a gate oxide is formed over a doped, buried region in a semiconductor substrate. A conductor is formed on top of the gate oxide. The gate conductor is transparent, and in one embodiment is a ... 12/29/05 - 20050285167 - Photodiode with self-aligned implants for high quantum efficiency and method of formation A pinned photodiode with a pinned surface layer formed by a self-aligned angled implant is disclosed. The angle of the implant may be tailored to provide an adequate offset between the pinned surface layer and an electrically active area of a transfer gate of the pixel sensor cell. The pinned ... 12/29/05 - 20050285166 - Monitoring patterns for an imaging device and method of monitoring a process using the monitoring patterns Monitoring patterns for an imaging device and a method of monitoring processing using the monitoring patterns are disclosed. Processing errors in the imaging device are detected and estimated by measuring resistances between main impurity regions and associated sub impurity regions in the monitoring patterns. Monitoring patterns corresponding to mis-aligned regions ... 12/29/05 - 20050285165 - Threshold voltage modulation image sensor An image sensor has a plurality of pixels each with a photoelectric conversion element and a detection transistor the threshold voltage of which fluctuates in accordance with electrical charge generated in the photoelectric conversion element. The image sensor includes a second conductivity type shield region and a first conductivity type ... 12/22/05 - 20050280056 - Image-sensing apparatus In a solid-state image-sensing device, when image sensing is performed, in each pixel, MOS transistors T1 and T5 are turned on and a MOS transistor T6 is turned off so that a MOS transistor T2 operates in a subthreshold region. When resetting is preformed, in each pixel, the MOS transistors ... 12/15/05 - 20050274996 - Solid-state imaging device and method for manufacturing the same A solid-state imaging device is provided, including: a semiconductor substrate; a photoelectric conversion portion formed in the semiconductor substrate; a gate insulation film formed on the semiconductor substrate so as to cover the photoelectric conversion portion; and a plurality of transfer gate electrodes that transfer charges generated at the photoelectric ... 12/08/05 - 20050269610 - Image pickup apparatus There is provided an image pickup apparatus comprising a plurality of pixels each including a photoelectric conversion unit which converts incident light into an electrical signal and accumulates the electrical signal, an amplifier transistor which amplifies and outputs the signal from the photoelectric conversion unit, a transfer transistor which transfers ... 12/08/05 - 20050269609 - Solid state image sensors A pinned-photodiode image sensor using shared output amplifiers, for example output amplifiers in the 2.5T arrangement has transfer gate control lines alternating or cross-coupled between successive columns or adjacent rows. This assists in removing row-row mismatches. In preferred embodiments, the approach is applied to Bayer pattern RGB sensors, and allows ... 12/08/05 - 20050269608 - Active pixel sensor with improved signal to noise ratio An active pixel sensor (APS) is disclosed which amplifies an electrical charge generated by a light-receiving unit using a charge amplification unit and thereafter processes an output current or voltage corresponding to an amplified version of the electrical charge. The light-receiving unit receives a light signal and generates holes and ... 12/08/05 - 20050269607 - Image sensor for mobile use and associated methods The image sensor includes an array of pixels. Each pixel has a pinned photodiode which transfers charge via a transfer gate to a floating diffusion, from which output is provided by a source follower. Each column has a voltage supply line and a signal line. Each row has a transfer ... 12/08/05 - 20050269606 - Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels An image pixel cell with a doped, hydrogenated amorphous silicon photosensor, raised above the surface of a substrate is provided. Methods of forming the raised photosensor are also disclosed. Raising the photosensor increases the fill factor and the quantum efficiency of the pixel cell. Utilizing hydrogenated amorphous silicon decreases the ... 12/01/05 - 20050263805 - Silicon-based resonant cavity photodiode for image sensors An imager with pixels having a resonant-cavity photodiode. The resonant cavity photodiode increases absorption of light having long wavelengths. A trench is formed for the photodiode and reflective film is grown on the bottom of the trench. The reflective film reflects light that is not initially absorbed back to the ... 11/24/05 - 20050258462 - Cmos image sensor Disclosed is a CMOS image sensor, which can minimize a reflectance of light at an interface between a photodiode and an insulating film, thereby enhancing image sensitivity. Such a CMOS image sensor includes a substrate provided with a photodiode consisting of Si, an insulating film consisting of SiO2 and formed ... 11/17/05 - 20050253177 - Two-transistor pixel with buried reset channel and method of formation A two-transistor pixel of an imager has a reset region formed adjacent a charge collection region of a photodiode and in electrical communication with a gate of a source follower transistor. The reset region is connected to one terminal of a capacitor which integrates collected charge of the photodiode. The ... 11/17/05 - 20050253176 - Chip scale image sensor and method for fabricating the same Disclosed are a chip scale image sensor and its fabricating method. Such a chip scale image sensor includes a first substrate on which a peripheral circuit is formed, a second substrate which is stacked on the first substrate and on which a pixel array is formed, and global interconnections for ... 11/03/05 - 20050242380 - Two dimensional image production method and system using solid-state image sensing device A two dimensional image production method by using a solid-state image sensing device, wherein the solid-state sensing device comprises a picture element producing part where electric charges generated by way of photo-electric conversion when receiving exposure is stored as charge signals, and a dark current measuring part where a dark ... 10/20/05 - 20050230721 - Cmos imager with enhanced transfer of charge and low voltage operation and method of formation A dopant gradient region of a first conductivity type and a corresponding channel impurity gradient below a transfer gate and adjacent a charge collection region of a CMOS imager photodiode are disclosed. The channel impurity gradient in the transfer gate provides a complete charge transfer between the charge collection region ... 10/20/05 - 20050230720 - Solid-state image sensor A solid-state image sensor of the present invention includes a semiconductor substrate 1 having a plurality of pixels, and each of the pixels comprises an impurity layer 2, a photoelectric converting layer 4, a read out region 5, and a gate electrode 7. The impurity layer 2 includes an adjoining ... 10/06/05 - 20050218436 - Solid-state image sensing device and cellphone having image processing function A solid-state image sensing device including an image sensing region in which a matrix of unit pixels, each including a photodiode in a surface portion of a semiconductor substrate, is provided; a read transistor connected between a respective photodiode and a detection node; an amplifying transistor connected to the detection ... 09/22/05 - 20050205905 - Method for forming a low leakage contact in a cmos imager An imaging device formed as a CMOS semiconductor integrated circuit includes a doped polysilicon contact line between the floating diffusion region and the gate of a source follower output transistor. The doped polysilicon contact line in the CMOS imager decreases leakage from the diffusion region into the substrate which may ... 09/15/05 - 20050199923 - Solid-state imaging device A solid-state imaging device having, in each of unit pixels, an on-chip microlens composed of plural convex lens parts for each of photoelectric conversion elements provided on a semiconductor chip is disclosed. A floating diffusion part and a signal-charge read gate for taking out a signal charge from the photoelectric ... 09/15/05 - 20050199922 - Cmos image device with polysilicon contact studs A CMOS image device comprises a pixel array region including a photo diode region, a floating diffusion region, and at least one MOS transistor having a gate and a junction region, a CMOS logic region disposed around the pixel array region, the CMOS logic region including a plurality of nMOS ... 09/08/05 - 20050194624 - Photoelectric conversion device and method of driving the same To read stable image information by making small in a short time the amount of change in potential at the time the potential of signal wires or sensor bias wires drops a moment, the device is, in the refresh mode of photoelectric conversion pixels, so driven that the timing at ... 09/01/05 - 20050189573 - Self masking contact using an angled implant A method of implanting, for example, a phosphorous plug over a charge collection region and a method of forming a contact over the phosphorous plug implant and charge collection region. The method allows implantation of phosphorous or other materials without contamination of other contact regions. The method further allows implantation ... 08/25/05 - 20050184322 - Solid-state image pick-up device and imaging system using the same The present invention provides a solid-state image pick-up device without shading in the dark state, and capable of making a dynamic range and a S/N high. Reference numeral 505 denotes an N-type cathode of a photodiode, 506 denoting a surface P-type region for forming the photodiode into an embedded structure, ... 08/25/05 - 20050184321 - Low dark current cmos image sensor pixel having a photodiode isolated from field oxide A low dark current CMOS image sensor pixel comprises a photodiode that is isolated from the field oxide by forming a relatively small photodiode within a relatively large active area such that the field oxide is substantially separated from the photodiode. The active area should be large enough such that ... 08/11/05 - 20050173742 - Solid state image sensing device and method of manufacturing the same A solid state image sensing device comprises a first semiconductor region of first conductivity type, a second semiconductor region of second conductivity type provided in the first semiconductor region, a third semiconductor region of second conductivity type provided in the first semiconductor region with a space from the second semiconductor ... 08/04/05 - 20050167711 - Photodiode with ultra-shallow junction for high quantum efficiency cmos image sensor and method of formation A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface layer has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5×1017 atoms per cm3 to about 1×1019 ... 08/04/05 - 20050167710 - Photoelectric conversion device, and image sensor and image input system making use of the same In a photoelectric conversion device comprising a first-conductivity type first semiconductor region located in a pixel region, a second-conductivity type second semiconductor region provided in the first semiconductor region, and a wiring for electrically connecting the second semiconductor region to a circuit element located outside the pixel region, a shield ... 08/04/05 - 20050167709 - Light-sensing device A method of fabricating light-sensing devices including photodiodes monolithically integrated with CMOS devices. Several types of photodiode devices (PIN, HIP) are epitaxially grown in one single step on active areas implanted in a common semiconductor substrate, the active areas having defined polarities. The epitaxially grown layers for the photodiode devices ... 07/28/05 - 20050161713 - Imager floating diffusion region and process for forming same The present invention provides an imager device with a floating diffusion region resistant to charge leakage. The floating diffusion region is formed having a first doped region and a second doped region which has a higher concentration of dopants than the first doped region. The floating diffusion region is resistant ... 07/28/05 - 20050161712 - Amplification type solid-state image pickup device and driving method therefor A plurality of pixel groups X(n) each comprising a plurality of pixels are set, and switched capacitor amplification parts are provided in correspondence to the pixel groups, respectively. Each of the switched capacitor amplification parts has a charge detection node to which output terminals of the transfer transistors of a ... 07/21/05 - 20050156214 - Cmos pixel with dual gate pmos A pixel circuit with a dual gate PMOS is formed by forming two P+ regions in an N− well. The N− well is in a P− type substrate. The two P+ regions form the source and drain of a PMOS transistor. The PMOS transistors formed within the N− well will ... 07/21/05 - 20050156213 - Cmos image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same are disclosed, in which the boundary between an active region and a field region is not damaged by ion implantation. The method for fabricating a CMOS image sensor includes forming a trench in a first conductive type semiconductor substrate, ... 07/14/05 - 20050151175 - Image sensor and image sensor module An image sensor is provided that can be made compact, low power consuming, and operative at high speed without degrading image quality and read-out speed. The image sensor includes a pixel cell having a photo diode 31 and a reset transistor 32 connected to a power supply, a detection transistor ... 07/07/05 - 20050145906 - Dual capacitor structure for imagers and method of formation CMOS and CCD imaging devices comprising different in-pixel capacitors and peripheral capacitors and methods of formation are disclosed. The capacitors used in periphery circuits have different requirements from the capacitors used in the pixel itself. Dual stack capacitors comprising two dielectric layers may be provided to achieve low leakage and ... 07/07/05 - 20050145905 - Solid-state imaging device and production method of the same A solid-state imaging device is provided, which comprises unit pixel portions. Each unit pixel portion comprises a first conductivity type substrate, a second conductivity type semiconductor layer, a first conductivity type well region, a light receiving region for generating electric charges when irradiated with light, an electric charge accumulation region ... 07/07/05 - 20050145904 - Cmos image sensor and method for detecting color sensitivity thereof A CMOS image sensor and a method for detecting color sensitivity of red, green and blue light without using a color filter layer is disclosed, which includes a semiconductor substrate having an active region; a photodiode formed in the active region of the semiconductor substrate, and generating an optical electric ... 06/30/05 - 20050139878 - Cmos image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same are disclosed, in which a defect caused by impurity ion implantation at the boundary between an active region below a gate electrode of a transistor constituting a CMOS image sensor and a device isolation film can be minimized. The ... 06/30/05 - 20050139877 - Deep photodiode isolation process A barrier implanted region of a first conductivity type located below an isolation region of a pixel sensor cell and spaced from a doped region of a second conductivity type of a photodiode of the pixel sensor cell is disclosed. The barrier implanted region is formed by conducting a plurality ... 06/23/05 - 20050133838 - Photodiode and method of manufacturing the same A photodiode and a method of manufacturing the photodiode are provided. The method includes forming a diode junction structure including a light receiving unit and an electrode unit on a semiconductor substrate, forming a buffer oxide layer and |