REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Having Insulated Electrode (e.g., Mosfet, Mos Diode) > Light Responsive Or Combined With Light Responsive Device > Imaging Array Imaging ArrayImaging Array patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/31/08 - 20080023735 - Light sensing element, array substrate having the same and liquid crystal display apparatus having the same In a light sensing element having simplified structure, an array substrate having the light sensing element and an LCD apparatus having the light sensing element, the light sensing element includes a first electrode, a control electrode and a second electrode. An alternating bias voltage is applied to the first electrode. ... 01/03/08 - 20080001192 - Image sensor with embedded photodiode region and manufacturing method for same A CMOS image sensor with an effectively increased aperture ratio and moreover with improved optical sensitivity, and a method of manufacture of such a CMOS image sensor is provided a first aspect of the invention is an image sensor, has a pixel region 10 in which are formed a plurality ... 12/27/07 - 20070296004 - Suppression of dark current in a photosensor for imaging A pixel cell having a halogen-rich region localized between an oxide isolation region and a photosensor. The halogen-rich region prevents leakage from the isolation region into the photosensor, thereby suppressing dark current in imagers. ... 12/20/07 - 20070290240 - Semiconductor device and method of manufacturing the semiconductor device A semiconductor device comprises: an MOS transistor including: a semiconductor substrate; a source region, formed in the semiconductor substrate, that comprises an impurity of a first conductive type; a drain region, formed in the semiconductor substrate, that comprises an impurity of the first conductive type; and a gate electrode, formed ... 11/15/07 - 20070262365 - Solid-state imaging device and method of driving the same A charge transfer section includes first transfer electrodes for effecting the reading and transfer of electric charges and the transfer of signal charges and second transfer electrodes each provided between adjacent ones of the first transfer electrodes to effect the transfer of the signal charges along the charge transfer section. ... 11/08/07 - 20070257284 - An ultra-small cmos image sensor pixel using a photodiode potential technique An image sensor includes a photosensitive region that accumulates charge corresponding to received incident light; a transfer gate for transferring all or a portion of the charge from the photosensitive region; a voltage supply having an increasing voltage over time that is applied to the transfer gate; a floating diffusion ... 10/18/07 - 20070241376 - Solid-state imaging device A solid-state imaging device is provided and includes: a semiconductor substrate; a plurality of photoelectric conversion films stacked above the semiconductor layer and absorbing different wavelength regions of light; and a transmission-blocking film at least one between the plurality of photoelectric conversion films, the transmission-blocking film blocking a transmission of ... 10/18/07 - 20070241375 - Image sensor and method of forming the same An image sensor includes a semiconductor substrate, a photo receiving area in the semiconductor substrate, a gate electrode installed in a lateral side of the photo receiving area on the semiconductor substrate, and a patterned dielectric layer covering the gate electrode, the photo receiving area, and exposing a partial gate ... 07/19/07 - 20070164331 - Thin film transistor substrate for display device and fabricating method thereof A thin film transistor (TFT) substrate is fabricated in three mask processes. In a first mask process, a gate line and a gate electrode are formed. In a second mask process, a data line, a source electrode, a drain electrode, a semiconductor layer, and a first upper storage electrode overlapping ... 07/19/07 - 20070164329 - Light-collecting device and solid-state imaging apparatus The light-collecting device includes light-transmitting films 101 which form concentric circles wherein, in each area divided by a constant width 103 of the divided area in an in-plane direction, a sum of line widths of a width 103 in the divided area is different each other. In each divided area, ... 07/12/07 - 20070158710 - Low-noise image sensor and transistor for image sensor Provided are a low-noise image sensor capable of improving the efficiency of charge transfer from a photodiode to a diffusion node region and effectively suppressing the generation of dark current, and a transistor for the image sensor. The image sensor includes: a photosensitive pixel having a transfer transistor formed in ... 07/12/07 - 20070158709 - Image sensor with improved surface depletion An image sensor device having a pixel cell with a pinned photodiode, which utilizes the fixed charge of an high K dielectric layer over the n-type region for the pinning effect without implanting a p-type layer over the n-type region, and methods of forming such a device. ... 07/12/07 - 20070158708 - Photodiode array, method for manufacturing same, and radiation detector A theme is to prevent the generation of noise due to damage in a photodetecting portion in a mounting process in a photodiode array, a method of manufacturing the same, and a radiation detector. In a photodiode array, wherein a plurality of photodiodes (4) are formed in array form on ... 07/05/07 - 20070152247 - Cmos image sensor with wide dynamic range The present invention relates a CMOS (Complementary Metal Oxide Semiconductor) image sensor capable of improving dynamic range by using an additional driver transistor. The CMOS image sensor according to the present invention has a pixel array which has a plurality of unit pixels each of which includes a photodiode and ... 06/28/07 - 20070145442 - Cmos image sensor Embodiments relate to a vertical-type CMOS image sensor, a method of manufacturing the same, and a method of gettering the same, in which source and drain regions are expanded to improve grounding and gettering effects. In embodiments, the vertical-type CMOS image sensor may include a silicon substrate, a first photodiode ... 06/28/07 - 20070145441 - Cmos image sensor and method for manufacturing the same Provided is a CMOS image sensor. The CMOS image sensor can include a semiconductor substrate, a blue photodiode region, a red photodiode region, a green photodiode region, an overcoat layer, and microlenses. The substrate can have a first photodiode region, a second photodiode region, and a transistor region. The blue ... 06/28/07 - 20070145440 - Cmos image sensor and method for fabricating the same A CMOS image sensor and a method of fabricating the same are provided. The CMOS image sensor includes a semiconductor substrate having a photodiode region and a transistor region defined therein, first and second gate electrodes formed on the photodiode region of the semiconductor substrate with a gate insulating layer ... 06/28/07 - 20070145439 - Cmos image sensor and method for manufacturing the same A CMOS image sensor and method of manufacturing the same are provided. In one embodiment, the CMOS image sensor includes: an interlayer dielectric layer formed on a semiconductor substrate including a plurality of photodiodes and transistors; a plurality of color filter isolation layers formed on the interlayer dielectric layer; a ... 06/14/07 - 20070131990 - System for manufacturing flat panel display A system for manufacturing a flat panel display includes a substrate storage part for storing a plurality of substrates; a first chamber including a substrate loading part for loading the plurality of substrates; a substrate transfer part, disposed between the substrate storage part and the first chamber, including an end ... 06/14/07 - 20070131989 - Thin film transistor array substrate for reducing electrostatic discharge damage A thin film transistor (TFT) array substrate for reducing electrostatic discharge damage includes a substrate, a plurality of pixel units, scan lines and data lines. The substrate has a pixel area and a peripheral area adjacent to the pixel area. The pixel units are disposed in the pixel area. The ... 06/14/07 - 20070131988 - Cmos image sensor devices and fabrication method thereof CMOS image sensor devices and fabrication methods thereof. A CMOS image sensor device comprises an array of photo-sensing pixels in a first region of a substrate. Each photo-sensing pixel comprises a fully non-salicide transistor and a pinned photodiode. A logic circuit comprises a complementary metal oxide semiconductor (CMOS) transistor in ... 06/07/07 - 20070126039 - Solid state imaging apparatus A 3Tr-operated CMOS solid-state imaging apparatus comprises a plurality of pixels including adjacent first and second pixels 230 and 231 including photodiodes 201 for converting light into signal charges and transfer transistors for reading out the signal charges accumulated in the photodiodes, respectively. The first pixel 230 further includes a ... 05/31/07 - 20070120159 - Cmos image sensor having duble gate insulator therein and method for manufacturing the same A method for manufacturing a CMOS image sensor includes: preparing a semiconductor substrate incorporating therein a p-type epitaxial layer by epitaxially growing up an upper portion of the semiconductor substrate; forming a pixel array in one predetermined location of the semiconductor substrate, the pixel array having a plurality of transistors ... 05/31/07 - 20070120158 - High dynamic range image sensor A pixel cell with controlled leakage is formed by modifying the location and gate profile of a high dynamic range (HDR) transistor. The HDR transistor may have a dual purpose, acting as both a leaking transistor and either a transfer gate or a reset gate. Alternatively, the HDR transistor may ... 05/31/07 - 20070120157 - Organic light emitting display device Disclosed is an organic light emitting display, which includes a large quantity of a hydroscopic layer having a good hydroscopic ability by changing a mounting structure of the hydroscopic layer. An organic light emitting display includes a first substrate. An organic emission portion is formed at one surface of the ... 05/17/07 - 20070108486 - Image pickup element performing image detection of high resolution and high image quality and image pickup apparatus including the same In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an ... 05/17/07 - 20070108485 - Image sensor cells A structure (and method for forming the same) for an image sensor cell. The method includes providing a semiconductor substrate. Then, a charge collection well is formed in the semiconductor substrate, the charge collection well comprising dopants of a first doping polarity. Next, a surface pinning layer is formed in ... 05/10/07 - 20070102737 - Display unit, method of manufacturing same, organic light emitting unit, and method of manufacturing same A display unit capable of being simply designed and manufactured by using more simplified light emitting device structure while capable of high definition display and display with superior color reproducibility and a manufacturing method thereof are provided. The display unit is a display unit (1), wherein a plurality of organic ... 05/03/07 - 20070096176 - Pixel and imager device having high-k dielectrics in isolation structures An imager device that has an isolation structure such that pinned photodiode characteristics are maintained without increasing doping levels. The invention provides an isolation structure to maintain pinned photodiode characteristics without increasing doping levels around the photodiode. By creating a substrate region surrounding the charge-collection region of the photodiode, the ... 04/26/07 - 20070090422 - Thin-film transistor panel having structure that suppresses characteristic shifts and method for manufacturing the same A thin-film transistor panel includes a substrate, and a thin-film transistor formed on the substrate. The transistor includes a gate electrode, a gate insulating film, a semiconductor thin film, first and second ohmic contact layers formed on the semiconductor thin film, and source and drain electrodes which are respectively formed ... 04/26/07 - 20070090421 - Array substrate for liquid crystal display device and method of fabricating the same An array substrate for a liquid crystal display device includes: a gate line and a first storage electrode on a substrate; a gate insulating layer on the gate line and the first storage electrode; a data line over the gate insulating layer, the data line crossing the gate line to ... 04/26/07 - 20070090420 - Pixel array A pixel array formed on a substrate mainly including scan lines and data lines is provided. The scan lines and the data lines are essentially consisted of conductive patterns disposed at different layers and contact windows electrically connected with the conductive patterns disposed at the different layers. The scan lines ... 04/19/07 - 20070085118 - Liquid-crystal display device with thin-film transistors and method of fabricating the same A LCD device prevents corrosion of the transparent conductive layers and contact resistance increase without arising the step coverage degradation due to the thickness increase of the interconnection layer, the step coverage degradation due to the formation of undercut portions, and productivity reduction and fabrication cost increase. A first interconnection ... 04/19/07 - 20070085117 - Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main surface. The photodetector includes at least one conductive via formed ... 04/19/07 - 20070085116 - Array substrate for liquid crystal display device and manufacturing method of the same A substrate for a display device includes a plurality of first lines on the substrate in a display area of the display device, a plurality of link lines on the substrate in a link region, the link lines electrically connected to the first lines and the link region being in ... 04/19/07 - 20070085115 - Memory cell, pixel structure and manufacturing process of memory cell for display panels A memory cell, suitable for being disposed on a substrate, comprises a poly-Si island, a first dielectric layer, a trapping layer, a second dielectric layer and a control gate. The poly-Si island is disposed on the substrate and includes a source doped region, a drain doped region and a channel ... 04/05/07 - 20070075344 - Semiconductor photo-detection device and radiation detection apparatus On the front side of an n-type semiconductor substrate 5, p-type regions 7 are two-dimensionally arranged in an array. A high-concentration n-type region 9 and a p-type region 11 are disposed between the p-type regions 7 adjacent each other. The high-concentration n-type region 9 is formed by diffusing an n-type ... 03/29/07 - 20070069259 - Cmos image sensor and method of manufacturing the same A CMOS image sensor, and method for manufacturing the same is provided. The CMOS image sensor includes a device isolation film formed in a device isolation region of a semiconductor substrate to define an active region and a device isolation region, a gate insulation film formed on the semiconductor substrate. ... 03/22/07 - 20070063234 - Solid-state imaging device, production method thereof and camera A solid-state imaging device and the production method capable of effectively suppressing color mixture between sensor portions, and a camera provided with the solid-state imaging device are provided: wherein the solid-state imaging device includes a first conductivity type semiconductor substrate, a second conductivity type epitaxial layer formed on the first ... 03/22/07 - 20070063233 - Array substrate and display device having the same An array substrate includes a base substrate, a plurality of gate lines, a plurality of data lines and a pixel matrix. The plurality of gate lines and the plurality of data lines define pixel areas. The pixel matrix is formed on each pixel area, and includes a plurality of pixel ... 03/22/07 - 20070063232 - Solid-state imaging device An energy ray sensitive region 11 is divided in its horizontal direction into m columns with the vertical direction as the longitudinal direction, divided in its vertical direction into n rows with the horizontal direction as the longitudinal direction, and is thereby provided with m×n photoelectric conversion portions 13 that ... 03/15/07 - 20070057297 - Liquid crystal display and driving method thereof A liquid crystal display (“LCD”) includes a plurality of pixels, each including first and second liquid crystal capacitors, a first storage capacitor including a first terminal connected to the second liquid crystal capacitor and a second terminal applied with a first storage electrode signal, a second storage capacitor including a ... 03/15/07 - 20070057296 - Voltage-controlled amplifier for a signal processing system A voltage-controlled amplifier for a signal processing system includes an input voltage reception end, a first voltage-to-current converter, a reference current generator, a gain adjustment circuit, a first current mirror, and an output circuit. The voltage-controlled amplifier adjusts a gain according to a variable control voltage, so as to transfer ... 03/01/07 - 20070045680 - Pixel cell arrays having pixel cells with color specific characteristics Imager devices having an array of photosensors, each photosensor having at least two doped regions. The two doped regions are each independently tailored to a particular wavelength. ... 03/01/07 - 20070045679 - Implanted isolation region for imager pixels A pixel cell array architecture having ion implant regions as isolation regions between adjacent active areas of pixels in the array. In one exemplary embodiment, the invention provides an ion-doped p-well region separating n-type photosensitive areas of neighboring pixel cells. The pixel cells have increased fill factor without encountering the ... 03/01/07 - 20070045678 - Method and apparatus providing refractive index structure for a device capturing or displaying images A transient index stack having an intermediate transient index layer, for use in an imaging device or a display device, that reduces reflection between layers having different refractive indexes by making a gradual transition from one refractive index to another. Other embodiments include a pixel array in an imaging or ... 03/01/07 - 20070045677 - Method and apparatus for calibrating parallel readout paths in imagers An imaging device with readout chain circuitry that uses multiple analog-to-digital converters and amplifiers, which are similarly calibrated using a stitching technique, to readout each color of a column and mitigate the possibility of a boundary effect. ... 02/22/07 - 20070040194 - Solid state imaging device A CCD image sensor includes photodiodes, vertical transfer CCDs for transferal of signal charge of the photodiodes, and a light shielding layer for protection of the vertical transfer CCDs from light. The light shielding layer covers over recesses disposed above the photodiodes, and each of the recesses has an opening ... 02/15/07 - 20070034915 - Transparent double-injection field-effect transistor A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent anode and/or cathode. The transistor may also be formed on a substantially transparent substrate. Electrode contacts ... 02/15/07 - 20070034914 - Isolation trench geometry for image sensors A pixel cell including a substrate having a top surface. A photo-conversion device is at a surface of the substrate and a trench is in the substrate adjacent the photo-conversion device. The trench has sidewalls and a bottom. At least one sidewall is angled less than approximately 85 degrees from ... 02/08/07 - 20070029590 - Image sensor for reduced dark current A method and structure for reducing dark current in an image sensor includes preventing unwanted electrons from being collected in the photosensitive region of the image sensor. In one embodiment, dark current is reduced by providing a deep n-type region having an n-type peripheral sidewall formed in a p-type substrate ... 02/01/07 - 20070023798 - Dual conversion gain gate and capacitor combination A pixel cell array architecture having a dual conversion gain. A dual conversion gain element is coupled between a floating diffusion region and a respective storage capacitor. The dual conversion gain element having a control gate switches in the capacitance of the capacitor to change the conversion gain of the ... 02/01/07 - 20070023797 - Complementary metal oxide semiconductor image sensor layout structure A complementary metal oxide semiconductor (CMOS) image sensor layout structure is described. The CMOS image sensor layout structure includes a substrate, a plurality of light sensing devices, a plurality of transistors and a plurality of color-filtering film layers. The substrate has a pixel array region comprising a plurality of pixels. ... 01/25/07 - 20070018211 - High dielectric constant spacer for imagers An imager having gates with spacers formed of a high dielectric material. The high dielectric spacer provides larger fringing fields for charge transfer and improves image lag and charge transfer efficiency. ... 01/18/07 - 20070012969 - Transparent metal shielded isolation for image sensors An isolation region formed in a substrate and lined with a transparent metal layer. The isolation region provides isolation between adjacent active areas of an integrated circuit structure, for example the inventive region may provide isolation between pixels of a pixel array. Utilizing a transparent material maintains high quantum efficiency ... 01/18/07 - 20070012968 - Solid-state imaging device and camera A solid-state imaging device is formed on a silicon substrate for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device includes, for each pixel, an imaging region which includes a photodiode having a charge ... 01/18/07 - 20070012967 - Thin film transistor array panel and fabrication The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film ... 01/18/07 - 20070012966 - Image sensors and methods of fabricating same Image sensor devices are provided having reduced dark current generation characteristics. These image sensor devices include a semiconductor substrate and a photo-detector therein (e.g., P-N photodiode). The photo-detector includes a charge-generating region therein that is configured to convert photons received by the photo-detector into charge carriers. A first transistor, which ... 01/18/07 - 20070012965 - Photodetection system and module One photodetection system includes a wide bandgap photodetector array which is physically and electrically integrated on a flexible interconnect layer including electrical connections, which is packaged in a manner for being electrically integrated with processing electronics such that the packaging and the processing electronics are configured for obtaining and processing ... 01/18/07 - 20070012964 - Method and apparatus providing capacitor on an electrode of an imager photosensor An imaging device having a pixel array in which one plate of a storage capacitor is coupled to a storage node while another plate is formed by an electrode of a photo-conversion region. ... 12/14/06 - 20060278904 - Image pickup device An image pickup device includes a plurality of photoelectric transducers; and a diffusion-reflection layer provided in front of the plurality of photoelectric transducers, wherein a part of light incident on the diffusion-reflection layer is reflected and dispersed therefrom, and the remainder of the incident light is transmitted through the diffusion-reflection ... 12/07/06 - 20060273360 - Cmos image sensor and method for manufacturing the same A CMOS image sensor and manufacturing method thereof are disclosed. The present CMOS image sensor comprises: a semiconductor substrate including an active region having a photo diode region and a transistor region; a gate on the active region, comprising a gate insulating layer and a gate electrode thereon; a first ... 12/07/06 - 20060273359 - Solid state imaging device, camera, and method for fabricating solid state imaging device In a solid state imaging device which includes a photodiode in the upper part of a silicon substrate and a MOSFET active region separated from the photodiode by a device isolation region, the width of the device isolation region is smaller in its lower part than in its upper part. ... 11/30/06 - 20060267054 - Image sensor with microcrystalline germanium photodiode layer A microcrystalline germanium image sensor array. The array includes a number of pixel circuits fabricated in or on a substrate. Each pixel circuit comprises a charge collecting electrode for collecting electrical charges and a readout means for reading out the charges collected by the charge collecting electrode. A photodiode layer ... 11/30/06 - 20060267053 - Snapshot cmos image sensor with high shutter rejection ratio A pixel image sensor has an isolation barrier and diffusion well connected to a biasing voltage to prevent substrate charge leakage caused by photoelectrons generated in the substrate beneath a photon sensing area of the pixel image sensor from drifting to a storage node. An opaque metallic silicide layer is ... 11/16/06 - 20060255380 - Cmos image sensor A pixel of a complementary metal oxide semiconductor (CMOS) image sensor includes a plurality of photodiodes for sensing light to thereby generate photoelectric charges in different regions; a plurality of transfer transistors for transferring photoelectric charges of corresponding photodiodes in response to a first control signal; a floating diffusion region ... 11/09/06 - 20060249764 - Pinned photodiode sensor with gate-controlled silicon-controlled rectifier transfer switch and method of formation A pinned photodiode sensor with gate-controlled SCR switch includes a pinned photodiode and a gate-controlled SCR switch. The SCR switch includes a P-type substrate, an N− doped region, and an N+ doped region formed on the substrate; a P+ doped region formed on the N− doped region; an oxide layer ... 11/09/06 - 20060249763 - Radiation image pickup device In a radiation image pickup device including: a sensor element for converting radiation into an electrical signal; and a thin film transistor connected to the sensor element, an electrode of the sensor element connected to the thin film transistor is disposed above the thin film transistor, and that the thin ... 11/09/06 - 20060249762 - Optoelectronic component having a conductive contact structure The invention relates to an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photoelectric current. The component consists of includes one substrate which is formed especially according to CMOS technology. The substrate has an integrated semiconductor structure and an optically active thin layer structure which is situated upstream in ... 11/02/06 - 20060244020 - Cmos image sensors and methods of manufacturing the same A CMOS image sensor (CIS) includes an active unit pixel having an Indium-doped impurity layer located below a transfer gate which transfers charges between a photo-receiving element and a floating diffusion region of the active unit pixel. ... 10/26/06 - 20060237755 - Method for automated testing of the modulation transfer function in image sensors A method for automatically measuring the modulation transfer function of an imager is disclosed. A opaque mask is placed over selected columns and rows of the imager during fabrication. In the course of an automated process, photons are uniformly shone over the image sensor. The amount of the input signal ... 10/12/06 - 20060226456 - Pixel sensor cell having reduced pinning layer barrier potential and method thereof A pixel sensor cell structure and method of manufacture. The pixel cell comprises a doped layer formed adjacent to a first side of a transfer gate structure for coupling a collection well region and a channel region. Potential barrier interference to charge transfer caused by a pinning layer is reduced. ... 10/05/06 - 20060220077 - Display device with built-in sensor A drive circuit that can cover a possible dispersion in characteristics among optical sensors is constructed in order to obtain a stable sensor output. The device includes an optical sensor provided in each of pixels arranged in lines in vertical and horizontal directions, a circuit that instructs a timing of ... 09/21/06 - 20060208289 - Mos image sensor A semiconductor image sensor includes: a semiconductor substrate having a number of pixels disposed in a matrix shape, the semiconductor substrate comprising a first region including a charge accumulation region of a photodiode and a floating diffusion and a second region including transistors, each having a gate electrode and source/drain ... 09/14/06 - 20060202242 - Solid-state imaging device A MOS solid-state imaging device is provided in which withstand voltage and 1/f noise of a MOS transistor are improved. In the MOS solid-state imaging device whose unit pixel has at least a photoelectric converting portion and a plurality of field effect transistors, the thickness of gate insulating film in ... 08/17/06 - 20060180837 - Tft substrate for display device and manufacturing method of the same Disclosed is a TFT substrate for a display apparatus comprising a gate wiring including a gate electrode, a data wiring including a data line, a source electrode connected to the data line, and a drain electrode connected to a pixel electrode, and a semiconductor layer disposed between the gate wiring ... 08/03/06 - 20060170018 - Solid-state imaging device and manufacturing method for the same A solid-state imaging device includes a semiconductor substrate including: a plurality of light-receptive portions that are arranged one-dimensionally or two-dimensionally; a vertical transfer portion that transfers signal electric charge read out from the light-receptive portions in a vertical direction; a horizontal transfer portion that transfers the signal electric charge transferred ... 07/27/06 - 20060163628 - Solid state imaging apparatus and method for fabricating the same A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate ... 07/20/06 - 20060157757 - Image display device The present invention provides an image display device which can enhance the overlapping positional accuracy of both substrates and can exhibit a prolonged lifetime and a high quality display by suppressing the generation of sparks. A plurality of island-like electrodes are arranged on a back substrate, the island-like electrodes are ... 07/20/06 - 20060157756 - Solid-state imaging device and manufacturing method thereof An object of the present invention is to provide a solid-state imaging device which can increase the amount of signal charge accumulation in a photodiode, and a manufacturing method thereof. The solid-state imaging device according to the present invention includes: a gate electrode formed on a p-type semiconductor substrate; an ... 07/13/06 - 20060151817 - Cmos image sensor having test pattern therein and method for manufacturing the same The method for manufacturing a test pattern for use in a CMOS image sensor is employed to measure a sheet resistivity of each ion implantation region, respectively. The method includes steps of: forming an FOX area on a semiconductor substrate so as to define an active area; forming a first ... 07/06/06 - 20060145205 - Cmos image sensor and method for manufacturing the same A CMOS image sensor and a method for manufacturing the same improves signal efficiency by reducing a dark signal, and includes a substrate having a first conductive type comprising an image area and a circuit area, a STI isolation layer in the substrate for electrical isolation within the circuit area, ... 07/06/06 - 20060145204 - Cmos image sensor and method for fabricating the same A CMOS image sensor includes a passivation layer including an etch stop layer, the passivation layer having a color filter array pattern formed to a depth determined by the etch stop layer, the color filter array pattern including separately defined color filter regions; and a color filter array including a ... 07/06/06 - 20060145203 - Method and apparatus for controlling charge transfer in cmos sensors with an implant by the transfer gate An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit. ... 07/06/06 - 20060145202 - Image sensor and method for forming isolation structure for photodiode An image sensor provided with: a plurality of photodiodes arranged on a surface of a semiconductor substrate, the photodiodes each including a first region of a first conductivity type provided on the semiconductor substrate, a second region of a second conductivity type provided on the first region, the second conductivity ... 06/29/06 - 20060138484 - Cmos image sensor and method for fabricating the same A CMOS image sensor includes a first conductive type semiconductor substrate having an active region and a device isolation region, a device isolation film formed in the device isolation region of the semiconductor substrate, a second conductive type diffusion region formed in the active region of the semiconductor substrate, and ... 06/29/06 - 20060138483 - Cmos image sensor and method for manufacturing the same A CMOS image sensor includes a semiconductor substrate with a first conductive type including a photodiode region and a transistor region, a gate electrode formed on the transistor region of the substrate, a first impurity region with a second conductive type formed in a portion of the semiconductor substrate between ... 06/29/06 - 20060138482 - Cmos image sensor and method of fabricating the same A CMOS image sensor and method for fabricating the same, wherein the CMOS image sensor has minimized dark current at the boundary area between a photodiode and an isolation layer. The present invention includes a first-conductivity-type doping area formed in the device isolation area of the substrate, the first-conductivity-type doping ... 06/29/06 - 20060138481 - Solid-state imaging device and method for manufacturing the same A solid-state imaging device includes a semiconductor substrate (1) with a photodetector portion (15). The photodetector portion (15) includes a p-type first impurity region (surface inversion layer) (6) formed in the semiconductor substrate (1) and an n-type second impurity region (photoelectric conversion region) (4) formed below the surface inversion layer ... 06/29/06 - 20060138480 - A cmos imager with cu wiring and method of eliminating high reflectivity interfaces therefrom An image sensor and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a thinner interlevel dielectric stack to result in a pixel array exhibiting increased light sensitivity. The image sensor includes structures having a minimum thickness of barrier layer metal that traverses the ... 05/25/06 - 20060108617 - Solid-state image pickup device and manufacturing method for the same A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical register) for transferring the signal charge read by the reading ... 04/27/06 - 20060086956 - Solid-state imaging device A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoelectric conversion section, a multilayer film including an insulating film ... 04/20/06 - 20060081899 - Detection arrangement for modular use in a combined transmission/emission tomography unit A detection arrangement is for modular use for a combined transmission/emission tomography unit, for measuring transmission x-radiation and emission γ-radiation inside a detector. The detection arrangement includes at least three absorption layers of different thickness, arranged one above another in the radiation direction, for detecting absorption events in which case ... 04/20/06 - 20060081898 - Enhanced color image sensor device and method of making the same A semiconductor device including a substrate having a plurality of image sensing elements formed therein, a plurality of spaced apart color filters overlying the substrate and a light blocking material interposed between adjacent spaced apart color filters. ... 04/13/06 - 20060076587 - Solid-state image sensor A p+-type region 5 on a surface of a photodiode unit is formed over a region from a surface of the photodiode unit through a surface of a signal charge read-out unit 9 until reaching the charge transfer unit. Also, the following structure is adapted: the structure in which a ... 04/06/06 - 20060071253 - Photoelectric conversion device and imaging device A photoelectric conversion device comprises: at least two electrodes; and an organic photoelectric conversion film intervening between said at least two electrodes, the organic photoelectric conversion film comprising a positive hole transporting material containing an arylidene compound having a specific structure. ... 04/06/06 - 20060071252 - Solid-state imaging apparatus Disclosed herein is a solid-state imaging apparatus including: a pixel section having a plurality of pixels disposed two-dimensionally in rows and columns, each pixel containing a photoelectric conversion section and an amplifying section for amplifying output of the photoelectric conversion section to output pixel signals; a first scanning section for ... 04/06/06 - 20060071251 - Solid state image pickup apparatus and radiation image pickup apparatus In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and the thin film transistor ... 03/23/06 - 20060060896 - Solid-state imaging device and manufacturing method thereof The solid-state imaging device according to the present invention comprises: a plurality of light-sensitive elements 1 arranged in a matrix form at regular spacings in a photoreceiving region provided on a semiconductor substrate; a plurality of detecting electrodes provided on the semiconductor substrate corresponding to the plurality of the light-sensitive ... 03/02/06 - 20060043440 - Imaging device and imaging system An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes 101A and 101B, plural transfer MOSFETs 102A and 102B arranged corresponding to the plural photodiodes, respectively, and a common MOSFET 104 which amplifies and outputs signals ... 03/02/06 - 20060043439 - Image pickup device and camera An object is to provide a solid state image pickup device and a camera which do not worsen a sensor performance in terms of an optical property, a saturated charge amount and the like. A solid state image sensor including a pixel region having a plurality of pixels includes at ... 03/02/06 - 20060043438 - Integrated photoserver for cmos imagers An exemplary system and method for providing an integrated photosensing element suitably adapted for use in CMOS imaging applications is disclosed as comprising inter alia: a processed CMOS host wafer (460) bonded with a monocrystalline, optically active donor wafer (300); a photosensing element (390) integrated in said optically active donor ... 03/02/06 - 20060043437 - Transparent metal shielded isolation for image sensors An isolation region formed in a substrate and lined with a transparent metal layer. The isolation region provides isolation between adjacent active areas of an integrated circuit structure, for example the inventive region may provide isolation between pixels of a pixel array. Utilizing a transparent material maintains high quantum efficiency ... 02/16/06 - 20060033130 - Liquid crystal display device An object of the invention is to repair a drain signal line easily. Each region enclosed by two gate signal lines adjacent to each other and two drain signal lines adjacent to each other that are formed on the liquid-crystal-side surface of one of transparent substrates that are opposed to ... 02/16/06 - 20060033129 - Low dark current image sensors with epitaxial sic and/or carbonated channels for array transistors A pixel cell having a substrate with a isolation channel formed of higher carbon concentrate such as SiC or carbonated silicon. The channel comprising SiC or carbonated silicon is provided over the substrate of the pixel cell to reduce the dark current leakage. ... 02/09/06 - 20060027845 - Imaging cell that has a long integration period and method of operating the imaging cell The integration period of an imaging cell, or the time that an imaging cell is exposed to light energy, is substantially increased by utilizing a single-poly, electrically-programmable, read-only-memory (EPROM) structure to capture the light energy. Photogenerated electrons are formed in the channel region of the EPROM structure from the light ... 02/09/06 - 20060027844 - Image sensor and method of manufacturing the same An image sensor for minimizing a dark level defect is disclosed. The image sensor includes an isolation layer formed on a substrate. A field region and an active region are defined on the substrate by the isolation layer. A photodiode is formed in the image sensor in such a structure ... 02/09/06 - 20060027843 - Solid-state image pickup apparatus The invention is to suppress a leak current in a photodiode and an unevenness in the leak currents. In a photoelectric converting device including a channel stop area of a higher concentration than in an element isolating insulation film formed between a photodiode, having an n-type semiconductor area formed in ... 02/02/06 - 20060022232 - Image sensor with improved charge transfer efficiency and method for fabricating the same An image sensor includes: a gate structure on a semiconductor layer of a first conductive type; a first impurity region of the first conductive type aligned with one side of the gate structure and extending to a predetermined depth from a surface portion of the semiconductor layer; spacers formed on ... 02/02/06 - 20060022231 - Barrier regions for image sensors Embodiments of the invention provide an image sensor that includes a barrier region for isolating devices. The image sensor comprises a substrate and an array of pixel cells formed on the substrate. Each pixel cell comprises a photo-conversion device. The array comprises a first pixel cell having a first configuration, ... 02/02/06 - 20060022230 - Solid-state image sensing device and method for manufacturing the same In the solid-state image sensing device, a first N type semiconductor region and an N well of a PMOS region are formed in the same process, thereby making the first N type semiconductor region and the N well in the PMOS region substantially equal in N type impurity concentration-depth profile. ... 01/19/06 - 20060011954 - Semiconductor photodetecting device and method of manufacturing the same A semiconductor photodetecting device is provided for enabling a solid-state image sensor to meet the requirements of higher quality imaging and more reduction in cost. The photodetecting device of the present invention includes: a semiconductor substrate; and an epitaxial layer formed on the semiconductor substrate by epitaxial growth. The epitaxial ... 01/19/06 - 20060011953 - Solid state imaging device and method of manufacturing the same A solid-state imaging device including a photoelectric conversion portion and a charge transfer portion equipped with charge transfer electrodes to transfer the charge generated in the photoelectric conversion portion, wherein the charge transfer portion is provided with a charge transfer electrodes having a first electrode including a first layer electric ... 01/19/06 - 20060011952 - Solid-state image sensor and method for fabricating the same A solid-state image sensor comprises a semiconductor substrate of a first conductivity type having a color pixel region and a black pixel region; a first well of the first conductivity type formed in the color pixel region; a second well of the first conductivity type formed in the black pixel ... 12/22/05 - 20050280055 - Solid state imaging unit and endoscope A solid state image pickup device includes: a first area defined on a principal surface of a semiconductor substrate; a second area defined in an area adjacent to the first area along a first direction; and a third area defined in an area adjacent to the second area along the ... 12/15/05 - 20050274995 - Image sensor and method of forming the same An image sensor includes a photodiode formed in a substrate, a buffer oxide layer, a blocking layer, an upper oxide layer, and a transmission supplementary layer. The buffer oxide layer covers the photodiode, and the blocking layer is disposed on the buffer oxide layer to cover the photodiode. The upper ... 12/15/05 - 20050274994 - High dielectric constant spacer for imagers An imager having gates with spacers formed of a high dielectric material. The high dielectric spacer provides larger fringing fields for charge transfer and improves image lag and charge transfer efficiency. ... 12/08/05 - 20050269605 - Cmos image sensor device and method A photodiode device including a well located in a substrate, a floating node located in the well and shallow trench isolation (STI) regions located over and laterally opposing the floating node. A borderless contact buffer layer is located over at least the floating node, and an interlevel dielectric layer is ... 12/08/05 - 20050269604 - Image pickup device The present invention uses an image pickup device comprising a plurality of pixels respectively including a photoelectric conversion unit for converting incoming light into a signal charge, an amplifying unit for amplifying the signal charge generated by the photoelectric conversion unit and a transfer unit for transferring the signal charge ... 12/08/05 - 20050269603 - Flexible printed circuit film A flexible printed circuit film has a first wiring and a second wiring. The first wiring is formed on a layer other than where the second wiring is formed, and crosses the second wiring almost at right angle 90°. This structure of the flexible printed circuit film enables to make ... 12/01/05 - 20050263804 - Solid-state imaging device and method of manufacturing the same A solid-state imaging device includes a pixel formation region 4 and a peripheral circuit formation region 20 formed in the same semiconductor substrate; in the peripheral circuit formation region 20 a first element isolation portion is formed of an element isolation layer 21 in which an insulation layer is buried ... 10/20/05 - 20050230719 - Display apparatus A display apparatus according to the present invention is provided with a gate line 2 formed on an insulating substrate, a source line 13 intersecting with the gate line 2 with an insulating film in between, a source electrode 6 connected to the source line 13, a drain electrode 10 ... 09/22/05 - 20050205904 - Method of forming an elevated photodiode in an image sensor The invention provides an elevated photodiode for image sensors and methods of formation of the photodiode. Elevated photodiodes permit a decrease in size requirements for pixel sensor cells while reducing leakage, image lag and barrier problems typically associated with conventional photodiodes. ... 09/22/05 - 20050205903 - Photoelectric conversion film, photoelectric conversion element, imaging element, method of applying electric field thereto and electric field-applied element An imaging element having a photoelectric conversion film which has a laminated structure comprising a p-type semiconductor layer and an n-type semiconductor layer between a pair of electrodes, wherein at least one of the p-type semiconductor and the n-type semiconductor contains an organic compound with controlled orientation; a photoelectric conversion ... 09/22/05 - 20050205902 - Image pickup element performing image detection of high resolution and high image quality and image pickup apparatus including the same In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an ... 09/22/05 - 20050205901 - Photoelectric conversion film-stacked type solid-state imaging device To provide a solid-state imaging device in which the number of transistors for each signal readout circuit provided in a semiconductor substrate side is reduced and the number of image signal readout lines is reduced, solid-state imaging device a semiconductor substrate; a stacked photoelectric conversion films detecting different colors contained ... 09/08/05 - 20050194623 - Driven circuit of an emitter switching configuration to control the saturation level of a power transistor when used with highly variable collector currents A drive circuit for an emitter switching configuration of transistors having a cascode connection of a power bipolar transistor and of a power MOS transistor control the saturation level of the configuration in applications which provide highly variable collector currents. The drive circuit includes a circuit operable to apply a ... 08/18/05 - 20050179072 - Isolation region implant permitting improved photodiode structure The invention provides a photodiode with an increased charge collection area, laterally spaced from an adjacent isolation region. Dopant ions of a first conductivity type with a first impurity concentration form a region surrounding at least part of the isolation region. These dopant ions are further surrounded by dopant ions ... 08/18/05 - 20050179071 - Angled implant for trench isolation A trench isolation having a sidewall and bottom implanted region located within a substrate of a first conductivity type is disclosed. The sidewall and bottom implanted region is formed by an angled implant, a 90 degree implant, or a combination of an angled implant and a 90 degree implant, of ... 08/04/05 - 20050167708 - Optimized photodiode process for improved transfer gate leakage An image sensing circuit and method is disclosed, wherein a photodiode is formed in a substrate through a series of angled implants. The photodiode is formed by a first, second and third implant, wherein at least one of the implants are angled so as to allow the resulting photodiode to ... 08/04/05 - 20050167707 - Solid state image sensing device and manufacturing and driving methods thereof A solid state image sensing device is composed of a second conductive type well area 33, a photoelectric conversion area 40, a ring shaped gate electrode 35, a transfer gate electrode 41, a second conductive type drain area 38, a second conductive type source area 36, and a first conductive ... 07/21/05 - 20050156212 - Cmos pixel with dual gate pmos A pixel circuit with a dual gate PMOS is formed by forming two P+ regions in an N− well. The N− well is in a P− type substrate. The two P+ regions form the source and drain of a PMOS transistor. The PMOS transistors formed within the N− well will ... 07/07/05 - 20050145903 - Semiconductor device, radiation detection device, and radiation detection system By forming a redundant circuit of an extra wiring accompanied with no decrease in an aperture ratio for a photoelectric conversion element, the yield is prevented from being reduced due to wire breaking during a panel manufacturing process. A gate line Vg4 and a Vg redundant wiring are electrically insulated ... 07/07/05 - 20050145902 - Supression of dark current in a photosensor for imaging A pixel cell having a halogen-rich region localized between an oxide isolation region and a photosensor. The halogen-rich region prevents leakage from the isolation region into the photosensor, thereby suppressing dark current in imagers. ... 06/16/05 - 20050127414 - Active pixel sensor with reduced fixed pattern noise An image sensor includes pixels each of which is designed to transfer charge, accumulated in a photoactive region of the pixel during a first period, through a second active region of the pixel to a power supply node, and to transfer charge, accumulated in the photoactive region during a second ... 06/16/05 - 20050127413 - Solid-state imaging device and method for manufacturing the same A solid-state imaging device according to the present invention includes a semiconductor substrate; a photoelectric conversion portion formed on the semiconductor substrate; a gate insulating film formed on the semiconductor substrate and covering the photoelectric conversion portion; a vertical transfer portion for transferring a charge generated at the photoelectric conversion ... 06/02/05 - 20050116269 - Solid-state imaging apparatus and method thereof In the solid-state imaging apparatus according to the present invention, a plurality of pixel units are arranged, said pixel units including (i) the photoelectric conversion element formed above the semiconductor substrate and (ii) the color filter layer formed above the photoelectric conversion element. And, in each color filter layer, the ... ### FreshPatents.com Support |