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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Having Insulated Electrode (e.g., Mosfet, Mos Diode) > Light Responsive Or Combined With Light Responsive Device Light Responsive Or Combined With Light Responsive DeviceLight Responsive Or Combined With Light Responsive Device patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.11/22/07 - 20070267665 - Optical sensor device and electronic apparatus In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It leads to increase in cost and mounting space of the optical sensor device. ... 11/08/07 - 20070257283 - Color filter-embedded msm image sensor An image sensor device includes a semiconductor substrate having a light-sensing region, and a first and second electrode embedded within the substrate. The first and second electrode forms an array of slits, the array of slits is configured to allow a wavelength of light to pass through to the light-sensing ... 10/11/07 - 20070235780 - Body potential imager cell An imaging circuit, an imaging sensor, and a method of imaging. The imaging cell circuit including one or more imaging cell circuits, each imaging cell circuit comprising: a transistor having a floating body for holding charge generated in the floating body in response to exposure of the floating body to ... 09/20/07 - 20070215921 - Method for independently detecting signals in a double-junction filterless cmos color imager cell A double-junction complimentary metal-oxide-semiconductor (CMOS) filterless color imager cell is provided. The imager cell is fabricated from a silicon-on-insulator (SOI) substrate including a silicon (Si) substrate, a silicon dioxide insulator overlying the substrate, and a Si top layer overlying the insulator. A photodiode set is formed in the SOI substrate, ... 08/09/07 - 20070181921 - Display device and manufacturing method therefor A display device includes a first insulating substrate having thin film transistors; a second insulating substrate of plastic having a black matrix comprising a plurality of horizontal extending portions extending in one directions and a plurality of vertical portions extending at an irregular interval in a second direction perpendicular to ... 07/12/07 - 20070158707 - Image sensor and fabricating method thereof An image sensor including a substrate, a plurality of conductive sections, a first type doped layer, an intrinsic layer, and a transparent electrode layer is provided. Wherein, the conductive sections are disposed on the substrate, and the dielectric layer is disposed between two adjacent conductive sections. In addition, the first ... 07/12/07 - 20070158706 - Thin film transistor A thin film transistor for fabricating on a flexible substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a channel layer, a first conductive pattern, and a second conductive pattern. The gate and the gate insulating layer are disposed on the flexible substrate, and the ... 06/28/07 - 20070145438 - Pixel sensor cell having reduced pinning layer barrier potential and method thereof A pixel sensor cell structure and method of manufacture. The pixel cell comprises a doped layer formed adjacent to a first side of a transfer gate structure for coupling a collection well region and a channel region. Potential barrier interference to charge transfer caused by a pinning layer is reduced. ... 06/28/07 - 20070145437 - Image sensor and method of manufacturing the same An image sensor may include at least one of: a semiconductor substrate including a plurality of photodiodes and a pad section; a protective layer formed over a semiconductor substrate including a trench pattern; an interlayer dielectric layer formed over a cell area of a protective layer; a color filter layer ... 06/14/07 - 20070131987 - Vertical image sensor and method for manufacturing the same Disclosed are a vertical color filter detector group (image sensor) and a method for manufacturing the same, capable of simplifying a manufacturing process by reducing the number of ion implantations and masks for connecting a green sensitive layer and a red sensitive layer to a sensor on a surface of ... 05/17/07 - 20070108484 - Optical sensor An optical sensor is characterized by comprising a photoconductive material (1) which generates a carrier (4) inside when irradiated with a light or an electromagnetic wave (3), and carbon nanotube (2), and by sensing the carrier (4), which is generated within the photoconductive material (1) by irradiation of the light ... 05/10/07 - 20070102736 - Image sensor device and method for manufacturing the same The invention is directed to a method for manufacturing an image sensor device. The method comprises steps of forming a photodiode and a transistor on a substrate. A salicide block is formed over a photo-sensing region of the photodiode. An interconnects processes is performed several times to forming a plurality ... 04/26/07 - 20070090419 - Cmos image sensor and manufacturing method thereof A CMOS image sensor and a method for manufacturing the same are provided. The CMOS image sensor includes: a photo diode formed in a semiconductor substrate for generating an optical signal from incident light; a first micro lens formed on the semiconductor substrate above the photo diode; a plurality of ... 04/26/07 - 20070090418 - Method for fabricating a high performance pin focal plane structure using three handle wafers The present invention concerns, in part, a method for fabricating a silicon PIN detector component wherein three handle wafers are bonded to the wafer at varying points in the fabrication process. The utilization of three handle wafers during fabrication significantly ease handling concerns associated with what would otherwise be a ... 04/19/07 - 20070085114 - Photodetector having a near field concentration The major features of this structure (4) or this grating are that it comprises patterns or grooves having a first spatial frequency and a second spatial frequency, and also comprising a central defect. ... 04/05/07 - 20070075343 - Solid-state imaging device, solid-state imaging apparatus and methods for manufacturing the same To arrange diffusion-inhibitory films 5a, 5b, and 5c for inhibiting the diffusion of a wiring material absent in a region on or above a light receiving unit 2, the diffusion-inhibitory films 5a, 5b, and 5c formed on a region above the light receiving unit 2 are selectively removed. Alternatively, the ... 03/29/07 - 20070069258 - Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of pixels having substantially 100% fill-factor. The bottom patterned semiconductor layer contains transistors for detecting, resetting, amplifying and transmitting signals charges received from the photoelectric elements. The top and bottom ... 03/15/07 - 20070057295 - Substrate bonding method and apparatus A substrate bonding apparatus and a substrate bonding method apply pressure according to the size of upper and lower substrates when the upper and lower substrates are bonded. The apparatus includes: an upper pressing unit having an upper plate to press an upper substrate, and a first presser to drive ... 03/15/07 - 20070057294 - Current-scaling active thin film transistor circuit structure for pixel of display device An active TFT circuit structure with current scaling function is disclosed, which includes a current source, a data line, a scan line, a direct current voltage source, capacitors and four transistors, wherein the capacitors form a cascade structure. During the ON-state, the two of the transistors are turn-on based on ... 03/08/07 - 20070051989 - Trench photosensor for a cmos imager A trench photosensor for use in a CMOS imager having an improved charge capacity. The trench photosensor may be either a photogate or photodiode structure. The trench shape of the photosensor provides the photosensitive element with an increased surface area compared to a flat photosensor occupying a comparable area on ... 02/15/07 - 20070034913 - Semiconductor device and method of fabricating same There are disclosed TFTs that have excellent characteristics and can be fabricated with a high yield. The TFTs are fabricated, using an active layer crystallized by making use of nickel. Gate electrodes are comprising tantalum. Phosphorus is introduced into source/drain regions. Then, a heat treatment is performed to getter nickel ... 02/08/07 - 20070029589 - Reduced crosstalk cmos image sensors CMOS image sensor having high sensitivity and low crosstalk, particularly at far-red to infrared wavelengths, and a method for fabricating a CMOS image sensor. A CMOS image sensor has a substrate, an epitaxial layer above the substrate, and a plurality of pixels extending into the epitaxial layer for receiving light. ... 02/01/07 - 20070023796 - Pinning layer for pixel sensor cell and method thereof A novel pixel sensor cell structure and method of manufacture. The pixel sensor cell includes a collection well region of a first conductivity type and a pinning layer formed in a substrate. The pinning layer includes a first impurity region of a second conductivity type and a second impurity region ... 01/18/07 - 20070012963 - Cmos image sensor and manufacturing method thereof Disclosed are a CMOS image sensor and a manufacturing method thereof. The method includes the steps of: forming an isolation layer on a semiconductor substrate, defining an active region that includes a photo diode region and a transistor region; forming a gate in the transistor region, the gate including a ... 01/18/07 - 20070012962 - Method for making image sensor with reduced etching damage A method of forming a pixel of an image sensor with reduced etching damage is disclosed. The method first includes forming a light sensitive element in a substrate. Then, a transfer gate is formed atop the substrate and adjacent to the light sensitive element. A protective layer, such as an ... 12/07/06 - 20060273358 - Semiconductor device In a laser pickup photodetector of an optical disk playback device, the sensitivity to blue light is improved. On a main surface of a semiconductor substrate, a high resistivity epitaxial layer that becomes an i layer of a PIN photodiode (PIN-PD) is formed. On a surface of the epitaxial layer, ... 11/30/06 - 20060267052 - Split trunk pixel layout A pixel array architecture having multiple pixel cells arranged in a split trunk pixel layout and sharing common pixel cell components. The array architecture increases the fill factor, and in turn, the quantum efficiency of the pixel cells. The common pixel cell components may be shared by a number of ... 10/05/06 - 20060220076 - Semiconductor device and its manufacturing method The object of the invention is to provide a semiconductor device that can form photodiodes that do not short circuit, without damage that causes leakage, despite formation of the opening part, and its manufacturing method. The second semiconductor layer (12, 16) of the second conductivity type is formed on the ... 09/21/06 - 20060208288 - Imaging with gate controlled charge storage A pixel cell comprises a photo-conversion device for generating charge and a gate controlled charge storage region for storing photo-generated charge under control of a control gate. The charge storage region can be a single CCD stage having a buried channel to obtain efficient charge transfer and low charge loss. ... 07/27/06 - 20060163627 - Deuterated structures for image sensors and methods for forming the same A pixel cell with a photo-conversion device and at least one structure includes a deuterated material adjacent the photo-conversion device. ... 06/22/06 - 20060131623 - Semiconductor device A semiconductor device includes: a semiconductor element provided on a semiconductor layer; a light-blocking wall provided around the semiconductor element; and a wiring layer electrically coupled to the semiconductor element and extended from an aperture not having the light-blocking wall to an outside of the light-blocking wall; wherein the wiring ... 03/16/06 - 20060054945 - Isolation techniques for reducing dark current in cmos image sensors A structure for isolating areas in a semiconductor device is provided. The structure includes a trench having first and second portions formed in a substrate. The first portion has a first width, and the second portion has a second width and is below the first portion. The first width is ... 03/02/06 - 20060043436 - Contacts for cmos imagers and method of formation Low leakage contacts on leakage sensitive areas of a CMOS imager, such as a floating diffusion region or a photodiode, are disclosed. At least one low leakage polysilicon contact is provided over a leakage sensitive area of a CMOS imager. The polysilicon contact comprises a polysilicon region in direct contact ... 01/12/06 - 20060006437 - Image sensor and method of fabricating the same Image sensors and methods of fabricating the same are provided. The image sensor includes a blocking pattern disposed on photodiodes. The blocking pattern is formed of insulation material having a metal diffusion coefficient which is lower than a silicon oxide diffusion coefficient. Therefore, dark defects of the image sensor are ... 01/12/06 - 20060006436 - Deuterated structures for image sensors and methods for forming the same A pixel cell with a photo-conversion device and at least one structure includes a deuterated material adjacent the photo-conversion device. ... 12/29/05 - 20050285164 - Photodetector with polarization state sensor Embodiments of the present invention include an apparatus, method, and system for a photodetector with a polarization state sensor. ... 12/22/05 - 20050280054 - Image sensors for reducing dark current and methods of fabricating the same An image sensor includes a semiconductor substrate of a first conductivity type, a photodiode of a second conductivity type located in the substrate, a hole accumulated device (HAD) region of the first conductivity type located over the photodiode, a thin surface diffusion region formed on the surface of the HAD ... 12/15/05 - 20050274993 - Total internal reflection (tir) cmos imager The subject invention is directed to use of photoconductors as conductors of light to photo diodes in a CMOS chip, wherein said photoconductors are separated by at least one low refractive index material (i.e. air). The present invention offers advantages over previous CMOS imaging technology, including enhanced light transmission to ... 09/15/05 - 20050199921 - Hollow dielectric for image sensor A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least one first insulating layer. The ... 08/25/05 - 20050184320 - Photoconductor having an embedded contact electrode A photodetector device comprising a contact electrode embedded within a semiconductor material. ... 08/18/05 - 20050179070 - Junction-isolated depletion mode ferroelectric memory devices and systems Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells for memory devices and electronic systems. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb. ... 07/07/05 - 20050145901 - Cmos image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same is disclosed, to improve reliability of a driving part transistor and to improve an output voltage of a photodiode, which includes a semiconductor substrate defined as a photodiode transistor region and a driving part transistor region; a first gate ... 07/07/05 - 20050145900 - Charge sweep operation for reducing image lag A method and apparatus are disclosed for improving imager lag by using a charge sweep operation in which residual charge is swept out of the photodiode to reduce lag effects. The charge is swept out of the photodiode by activating the reset transistor a second time, substantially simultaneously with the ... 06/09/05 - 20050121707 - Solid-state image sensing apparatus and method of manufacturing the same A solid-state image sensing apparatus having a three-dimensional structure whose manufacturing process can be simplified is provided. A solid-state image sensing apparatus formed by bonding a first member (104) and a second member (108) is provided. The first member (104) has a first surface on the side of the bonding ... ### FreshPatents.com Support |