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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Junction Field Effect Transistor (unipolar Transistor) > With Multiple Channels Or Channel Segments Connected In Parallel, Or With Channel Much Wider Than Length Between Source And Drain (e.g., Power Jfet) With Multiple Channels Or Channel Segments Connected In Parallel, Or With Channel Much Wider Than Length Between Source And Drain (e.g., Power Jfet)With Multiple Channels Or Channel Segments Connected In Parallel, Or With Channel Much Wider Than Length Between Source And Drain (e.g., Power Jfet) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.09/13/07 - 20070210350 - Power semiconductor device, method for manufacturing same, and method for driving same A power semiconductor device includes: a semiconductor layer having a trench extending along a first direction in a stripe configuration; a gate electrode buried in the trench for controlling a current flowing in the semiconductor layer; and a gate plug made of a material having higher electrical conductivity than the ... 04/19/07 - 20070085111 - Termination structure A power semiconductor device having a termination structure that includes a polysilicon field plate, a metallic field plate, and a polysilicon equipotential ring. ... 04/05/07 - 20070075341 - Semiconductor decoupling capacitor A semiconductor capacitor that includes a plurality of overlapping conductive layers and a field-effect transistor. The plurality of conductive layers include a first and second conductive layers that are spaced apart to creating a capacitance between the plurality of layers. In the semiconductor capacitor, the FET has a source, a ... 02/08/07 - 20070029586 - Multi-channel transistor structure and method of making thereof A method of forming an electronic device includes, forming a first channel coupled to a first current electrode and a second current electrode and forming a second channel coupled to the first current electrode and the second current electrode. The method also includes the second channel being substantially parallel to ... 01/25/07 - 20070018204 - High-frequency device including high-frequency switching circuit A high-frequency device having a switching circuit includes a compound semiconductor substrate; a first high-frequency input/output terminal; a second high-frequency input/output terminal; a control signal input terminal; a power terminal; a ground terminal; an insulating portion disposed on one main surface of the compound semiconductor substrate; and a voltage-applying electrode ... 12/28/06 - 20060289903 - Method of forming metal/high-k gate stacks with high mobility The present invention provides a gate stack structure that has high mobilites and low interfacial charges as well as semiconductor devices, i.e., metal oxide semiconductor field effect transistors (MOSFETs) that include the same. In the semiconductor devices, the gate stack structure of the present invention is located between the substrate ... 09/21/06 - 20060208286 - Method for manufacturing semiconductor device and semiconductor device A method of forming a crystal grain for use in a semiconductor manufacturing process, the method including the steps of forming an oxide silicon film on a glass substrate, etching at least one hole at a predetermined location in the oxide silicon film, forming an amorphous silicon film over the ... 12/29/05 - 20050285158 - Single-chip common-drain jfet device and its applications A single-chip common-drain JFET device comprises a drain, two gates and two source arranged such that two common-drain JFETs are formed therewith. Due to the two JFETs merged within a single chip, no wire bonding connection is needed therebetween, thereby without parasitic inductance and resistance caused by bonding wire, and ... 12/29/05 - 20050285157 - Distributed high voltage jfet A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions ... 12/01/05 - 20050263800 - Power semiconductor device for suppressing substrate recirculation current and method of fabricating power semiconductor device A power semiconductor device has a first region in which a transistor is formed, a third region in which a control element is formed, and a second region for separating the first region and the third region. The power semiconductor device includes a substrate of a first conductive type and ... 09/08/05 - 20050194621 - Double diffused vertical jfet We disclose the structure of a JFET device, the method of making the device and the operation of the device. The device is built near the top of a substrate. It has a buried layer that is electrically communicable to a drain terminal. It has a body region above the ... 06/30/05 - 20050139871 - Micro-electromechanical systems A MEMS incorporating a sensing element and a JFET electrically connected to the sensing element is fabricated by the steps of: forming a first layer of electrically insulating barrier material on a surface of a substrate; patterning the first layer so as to expose a first region of the substrate; ... 06/09/05 - 20050121701 - Semiconductor device In a semiconductor device, risk of malfunction of a heat sensing diode on a main side of a vertical power semiconductor element is minimized by arranging the diode at the center of the element. Because the heat sensing diode is disposed at the center of the main side of the ... ### FreshPatents.com Support |