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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Junction Field Effect Transistor (unipolar Transistor) > With Schottky Gate With Schottky GateWith Schottky Gate patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/10/08 - 20080006853 - Schottky electrode of nitride semiconductor device and process for production thereof The present invention provides a Schottky electrode for a nitride semiconductor device having a high barrier height, a low leak current performance and a low resistance and being thermally stable, and a process for production thereof. The Schottky electrode for a nitride semiconductor has a layered structure that comprises a ... 08/23/07 - 20070194353 - Metal source/drain schottky barrier silicon-on-nothing mosfet device and method thereof A Schottky barrier MOSFET (SB-MOS) device and a method of manufacturing having a silicon-on-nothing (SON) architecture in a channel region is provided. More specifically, metal source/drain SB-MOS devices are provided in combination with a channel structure comprising a semiconductor channel region such as silicon isolated from a bulk substrate by ... 06/21/07 - 20070138515 - Dual field plate mesfet A dual field plate MESFET and method of forming a dual field plate MESFET are provided. The MESFET includes a gate electrode and a drain electrode, with the gate electrode and drain electrode formed on a substrate. The MESFET further includes a gate side field plate at the gate electrode ... 05/31/07 - 20070120153 - Rugged mesfet for power applications A rugged MESFET for power applications includes a drain region surrounded by a ring shaped gate. The gate is surrounded, in turn by a source region. This eliminates the high-field point between gate and drain along the device's etched mesa surface and results in improved avalanche capability. ... 11/16/06 - 20060255377 - Field effect transistor with novel field-plate structure A field effect transistor (FET) with novel field-plate structure relates to a Schottky gate FET structure with field plate thereon for increasing the operation voltage. The structure can eliminate surface damages of unpassivated region and degradation of the interface property of gate contacts during plasma etching of dielectric film for ... 10/26/06 - 20060237753 - Semiconductor device and method for manufacturing the same A field effect transistor according to the present invention includes a channel layer formed above a semi-insulating substrate, a Schottky layer formed above the channel layer, a gate electrode formed on the Schottky layer, Ohmic contact layers that are located above the Schottky layer with the gate electrode interposed therebetween ... 07/06/06 - 20060145201 - Semiconductor device and field-effect transistor A Schottky electrode including a WNx layer on an n-type GaN layer. A crystal plane of the n-type GaN layer is in contact with a crystal plane of the WNx layer. The crystal plane of the n-type GaN layer is a (0001)-plane, and the crystal plane of the WNx layer ... 06/22/06 - 20060131621 - Device using ambipolar transport in sb-mosfet and method for operating the same A device using an ambipolar transport of an SB-MOSFET and a method for operating the same are provided. The SB-MOSFET includes: a silicon channel region; a source and a drain contacted on both sides of the channel region and formed of material including metal layer; and a gate formed on ... 05/04/06 - 20060091430 - Metal-semiconductor field effect transistors (mesfets) having drains coupled to the substrate and methods of fabricating the same The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a MESFET having a source region, a drain region and a gate contact. The gate contact is disposed between the source region and the drain region. The drain region is ... 04/20/06 - 20060081893 - Semiconductor device and method of manufacturing the same A semiconductor device comprises an n-type MIS transistor comprising a first gate insulating film and a first gate electrode including an MSix film formed on the first gate insulating film, where M represents a metal element selected from tungsten and molybdenum and x is greater than 1, i.e., x>1; and ... 04/13/06 - 20060076585 - Semiconductor resistor and method for manufacturing the same An object of the present invention is to provide a semiconductor resistor that allows improvement in saturation voltage characteristics and a method for manufacturing the same. The semiconductor resistor of the present invention is formed on the substrate on which a GaAs FET is formed. The GaAs FET includes: a ... 03/23/06 - 20060060895 - Semiconductor device and method for fabricating the same In the structure of a semiconductor device of the present invention, a first source electrode is connected to a conductive substrate through a via hole, and a second source electrode is formed. Thus, even if a high reverse voltage is applied between a gate electrode and a drain electrode, electric ... 01/05/06 - 20060001057 - Schottky device and method of forming A conductive layer includes a first portion that forms a Schottky region with an underlying first region having a first conductivity type. A second region of a second conductivity type underlies the first region, where the second conductivity type is opposite the first conductivity type. A third region of the ... 11/24/05 - 20050258459 - Method for fabricating semiconductor devices having a substrate which includes group iii-nitride material A method for fabricating a device having a substrate comprising III-N material, such as gallium nitride or aluminum gallium nitride. A surface of the substrate comprising group III-N is oxidized to form an oxide layer comprising III-oxide or III-oxynitride. The layer is formed with a predetermined thickness. Portions of the ... 10/06/05 - 20050218433 - Dual metal schottky diode An embodiment of the invention is a Schottky diode 22 having a semiconductor substrate 3, a first metal 24, a barrier layer 26, and second metal 28. Another embodiment of the invention is a method of manufacturing a Schottky diode 22 that includes providing a semiconductor substrate 3, forming a ... 06/30/05 - 20050139870 - Field-effect transistor A field-effect transistor includes: a carrier supply layer supplying carriers; a Schottky contact layer forming a Schottky barrier; and an intermediate layer formed between the carrier supply layer and the Schottky contact layer. Here, the intermediate layer has an electron affinity which is higher than an electron affinity of the ... 06/23/05 - 20050133829 - High-frequency semiconductor device A high-frequency semiconductor device includes: a first cell which includes of gate electrodes on a surface of an epitaxial layer of a substrate, drain electrodes and source electrodes alternately located relative to the gate electrodes, a source electrode connection wiring striding over the gate electrodes and the drain electrodes and ... ### FreshPatents.com Support |