REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Junction Field Effect Transistor (unipolar Transistor) > Plural, Separately Connected, Gates Control Same Channel Region Plural, Separately Connected, Gates Control Same Channel RegionPlural, Separately Connected, Gates Control Same Channel Region patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.05/31/07 - 20070120152 - Gate-in-panel type liquid crystal display device and method of fabricating the same A liquid crystal display device comprises: a first substrate and a second substrate facing and spaced apart from each other, the first substrate and the second substrate including an active area, a signal input area and a pad area, the signal input area and the pad area being disposed at ... 03/01/07 - 20070045674 - Semiconductor device and method of fabricating same A semiconductor device includes: two MOSFETs each having a gate electrode formed on a substrate through a gate insulating film, a gate sidewall formed on both sides of the gate electrode, and a source/drain region formed in the substrate; a filled film filled between the adjacent gate sidewalls of the ... 02/08/07 - 20070029585 - Liquid crystal display and method for driving the same A liquid crystal display (LCD) and a method for driving the same include a timing control unit that outputs a first timing signal including a data signal and a load signal and a second timing signal including a gate selection signal and an output enable signal, a delay unit that ... 11/16/06 - 20060255375 - Anti-halo compensation An apparatus and method for controlling the net doping in the active region of a semiconductor device in accordance with a gate length is provided. A compensating dopant is chosen to be a type of dopant which will electrically neutralize dopant of the opposite type in the substrate. By implanting ... 09/14/06 - 20060202238 - Lateral junction field effect transistor and method of manufacturing the same A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer ... 07/06/06 - 20060145200 - Gate structure of a semiconductor device Disclosed herein is a method for forming a gate structure in a semiconductor device. The method comprises forming a SiGe film on a predetermined region of a silicon substrate corresponding to a bit-line node portion where a bit-line junction is formed, growing a silicon film over the silicon substrate having ... 05/25/06 - 20060108615 - Liquid crystal display apparatus and driving method thereof This invention relates to a liquid crystal display device that minimizes picture quality deterioration caused by signal distortion. The present invention selects an area within an image, which has a rapidly increasing or decreasing gamma voltage, identifies a border delineating two different intensity regions within the area, computes an average ... 04/06/06 - 20060071246 - Semiconductor device and sustaining circuit At least two switching devices each including a substrate formed of a wide bandgap semiconductor, source and gate electrodes formed in a principal surface side of the substrate, and a drain electrode formed on the back surface of the substrate are stacked so that respective upper surface sides of the ... ### FreshPatents.com Support |