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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Junction Field Effect Transistor (unipolar Transistor) Junction Field Effect Transistor (unipolar Transistor)Junction Field Effect Transistor (unipolar Transistor) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.11/29/07 - 20070272952 - Electronic devices including a semiconductor layer An electronic device can include a first semiconductor portion and a second semiconductor portion, wherein the compositions of the first and second semiconductor portions are different from each other. In one embodiment, the first and second semiconductor portions can have different stresses compared to each other. In one embodiment, the ... 09/20/07 - 20070215911 - Magnetic tunnel junction patterning using ta/tan as hard mask An MTJ MRAM cell is formed by using a reactive ion etch (RIE) to pattern an MTJ stack on which there has been formed a bilayer Ta/TaN hard mask. The hard mask is formed by patterning a masking layer that has been formed by depositing a layer of TaN over ... 07/19/07 - 20070164321 - Methods of fabricating transistors including supported gate electrodes and related devices Transistors are fabricated by forming a protective layer having an opening extending therethrough on a substrate, and forming a gate electrode in the opening. A first portion of the gate electrode laterally extends on surface portions of the protective layer outside the opening, and a second portion of the gate ... 05/24/07 - 20070114574 - Semiconductor device An object of the present invention is to achieve both the high withstand voltage and the low on-resistance in a polycrystalline Si embedded gate SiC junction FET. n+ —SiC is formed as a drain layer; and n− —SiC which contacts an n+ drain layer is formed as a drift layer. ... 05/03/07 - 20070096166 - Semiconductor device A semiconductor device has a semiconductor substrate having an upper main surface and a lower main surface. The semiconductor substrate includes a drain layer, a main base region, an underpad base region and a source region. The semiconductor device includes a first main electrode connected to the main base region ... 03/29/07 - 20070069250 - Integrated circuit with depletion mode jfet An integrated circuit having an n-channel MOSFET device and a JFET device. The integrated circuit includes a semiconductor layer having an upper surface, an MOS transistor device formed in a doped well of a first conductivity type extending from the semiconductor upper surface and a JFET device. The JFET device ... 01/18/07 - 20070012958 - Distributed high voltage jfet A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions ... 12/28/06 - 20060289901 - Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices A monolithic electronic device includes a first nitride epitaxial structure including a plurality of nitride epitaxial layers. The plurality of nitride epitaxial layers include at least one common nitride epitaxial layer. A second nitride epitaxial structure is on the common nitride epitaxial layer of the first nitride epitaxial structure. A ... 11/16/06 - 20060255374 - Manufacturing process and structure of power junction field effect transistor A manufacturing process and a power junction field-effect transistor (JFET) are provided. The basic concept of the present invention is to allow the current to flow vertically from the drain region on the bottom side to the source region on the topside of the device. By regulating the voltage applied ... 11/16/06 - 20060255373 - Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure The invention relates to a semiconductor structure for controlling a current (I), comprising a first n-conductive semiconductor region (2), a current path that runs within the first semiconductor region (2) and a channel region (22). The channel region (22) forms part of the first semiconductor region (2) and comprises a ... 10/05/06 - 20060220072 - Vertical junction field effect transistor having an epitaxial gate A vertical junction field effect transistor includes a trench formed in an epitaxial layer. The trench surrounds a channel region of the epitaxial layer. The channel region may have a graded or uniform dopant concentration profile. An epitaxial gate structure is formed within the trench by epitaxial regrowth. The epitaxial ... 07/20/06 - 20060157745 - Vertical unipolar component with a low leakage current A TMBS-type Schottky diode including main electrodes on active areas on the upper surface side and a main electrode on the lower surface side, including on the upper surface side conductive fingers penetrating between the active areas and biased, directly or indirectly, like the active areas. The fingers includes closer ... 06/08/06 - 20060118833 - Vertical unipolar component periphery A vertical unipolar component formed in a semiconductor substrate, comprising vertical fingers made of a conductive material surrounded with silicon oxide, portions of the substrate being present between the fingers and the assembly being coated with a conductive layer. The component periphery includes a succession of fingers arranged in concentric ... 06/01/06 - 20060113574 - Field effect transistor On an SiC single crystal substrate, an electric field relaxation layer and a p− type buffer layer are formed. The electric field relaxation layer is formed between the p− type buffer layer and the SiC single crystal substrate to contact SiC single crystal substrate. On the p− type buffer layer, ... 12/29/05 - 20050285156 - Organic compound crystal and field-effect transistor A field-effect transistor includes a channel-forming region composed of an organic compound crystal including π-electron conjugated molecules each containing chalcogen atoms as a constituent, wherein the distance between chalcogen atoms of adjacent π-electron conjugated molecules is short, and the organic compound crystal has a periodic structure in which π-electron conjugated ... ### FreshPatents.com Support |