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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > With Current Flow Along Specified Crystal Axis (e.g., Axis Of Maximum Carrier Mobility) With Current Flow Along Specified Crystal Axis (e.g., Axis Of Maximum Carrier Mobility)With Current Flow Along Specified Crystal Axis (e.g., Axis Of Maximum Carrier Mobility) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/10/08 - 20080006852 - Dense chevron finfet and method of manufacturing same A method, structure and alignment procedure, for forming a finFET. The method including, defining a first fin of the finFET with a first mask and defining a second fin of the finFET with a second mask. The structure including integral first and second fins of single-crystal semiconductor material and longitudinal ... 11/15/07 - 20070262361 - Structure and method for manufacturing strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels The present invention provides a strained Si directly on insulator (SSDOI) substrate having multiple crystallographic orientations and a method of forming thereof. Broadly, but in specific terms, the inventive SSDOI substrate includes a substrate; an insulating layer atop the substrate; and a semiconducting layer positioned atop and in direct contact ... 11/15/07 - 20070262360 - High mobility power metal-oxide semiconductor field-effect transistors High mobility P-channel power metal oxide semiconductor field effect transistors. In accordance with an embodiment of the present invention, a power MOSFET is fabricated such that the holes flow in an inversion/accumulation channel, which is along the (110) crystalline plane, or equivalents, and the current flow is in the [110] ... ### FreshPatents.com Support |