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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Charge Transfer Device > Non-electrical Input Responsive (e.g., Light Responsive Imager, Input Programmed By Size Of Storage Sites For Use As A Read-only Memory, Etc.) > Having Structure To Improve Output Signal (e.g., Exposure Control Structure) > Sensors Not Overlaid By Electrode (e.g., Photodiodes) Sensors Not Overlaid By Electrode (e.g., Photodiodes)Sensors Not Overlaid By Electrode (e.g., Photodiodes) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.11/15/07 - 20070262355 - Pixel with asymmetric transfer gate channel doping A pixel including a substrate of a first conductivity type and having a surface, a photodetector of a second conductivity type that is opposite the first conductivity type, a floating diffusion region of the second conductivity type, a transfer region between the photodetector and the floating diffusion, a gate positioned ... 10/25/07 - 20070246746 - Solid-state image pickup device A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion ... 10/18/07 - 20070241372 - Image sensor device and method of manufacturing the same A method of manufacturing image sensor devices, in which a dielectric protecting layer is formed on a photo-receiving region before a gate of a MOS is formed. Therefore, during the subsequent processes for forming the MOS component, damage to the surface of the photo-receiving region caused by plasma or etching ... 08/23/07 - 20070194352 - Cmos image sensor and method for manufacturing the same A CMOS image sensor and a manufacturing method thereof are disclosed. The gates of the transistors are formed in an active region of a unit pixel, and at the same time, a passivation layer is formed on an edge portion of the active region of a photodiode to have the ... 08/02/07 - 20070176212 - Integrated circuit having resistance temperature sensor An integrated circuit having a resistance temperature sensor composed of a first resistance structure formed within a trench, and a second resistance structure formed within a mesa region is disclosed. This embodiment makes it possible to suppress or reduce manufacturing-technological fluctuations of the width of the trenches to a resistance ... 07/12/07 - 20070158696 - Optical enhancement of integrated circuit photodetectors A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable through the ... 06/28/07 - 20070145425 - Cmos image sensor Embodiments relate to a complementary metal oxide semiconductor (CMOS) image sensor. According to embodiments, the CMOS image sensor may include a semiconductor substrate, an interlayer insulating layer, a color filter layer, an overcoat layer, and a plurality of microlenses. The semiconductor substrate may include a plurality of photodiodes and transistors ... 06/28/07 - 20070145424 - Image sensor, controlling method of the same, x-ray detector and x-ray ct apparatus The present invention provides always stably sampling a high quality image irrespective of the displacement of a subject, with a simpler arrangement. The image sensor in accordance with the present invention includes a plurality of photodiodes arranged in a two-dimensional array and a plurality of read out gate circuits for ... 06/28/07 - 20070145423 - Cmos image sensor and manufacturing method thereof A CMOS (complementary metal oxide semiconductor) image sensor and method of fabricating the same is provided. The CMOS image sensor can include: a semiconductor substrate in which an active region and a device isolation region are defined; a photodiode region including a first region and a second region extending from ... 06/14/07 - 20070131977 - Low dark current photodiode for imaging A photodiode and method of forming a photodiode has a substrate. An absorption layer is formed on the substrate to absorb lightwaves of a desired frequency range. A multiplication structure is formed on the absorption layer. The multiplication layer uses a low dark current avalanching material. The absorption layer and ... 05/03/07 - 20070096161 - Apparatus and method of image processing to avoid image saturation An imaging device includes a plurality of photo-diodes that operate as optical pixels arranged in a plurality of columns on a single CMOS substrate. The outputs of the multiple pixel sensors, or photo-diodes, are examined to determine if a one pixel, or a region of pixels are in saturation. If ... 04/19/07 - 20070085109 - Single element optical sensor The single element optical sensor of this invention is a two-terminal element and comprises a light absorbing semiconductor layer, potential barrier materials positioned in said light absorbing layer and two electrodes connected to said light absorbing layer. Positions and chemical compositions of the potential barriers are adjusted according to wavebands ... 03/01/07 - 20070045669 - Image sensor An image sensor according to an embodiment of the invention includes: a plurality of pixels arranged in line; a reading gate adjacent to the plurality of pixels; a plurality of memory gates formed adjacent to the reading gate and corresponding to the plurality of pixels; a plurality of memory control ... 02/22/07 - 20070040192 - Photodiode array and production method thereof, and radiation detector A photodiode array 1 is provided with an n-type silicon substrate 3. A plurality of photodiodes 4 are formed in array on the opposite surface side to an incident surface of light L to be detected, in the n-type silicon substrate 3. A resin film 6 for transmitting the light ... 02/08/07 - 20070029581 - Pixel sensor cell for collecting electrons and holes The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel ... 02/08/07 - 20070029580 - Image-processing unit An image-processing unit for an image sensor is provided. The image-processing unit comprises a plurality of photodiodes arranged inside the image sensor. The photodiodes have different sensing area according to its location. Typically, the sensing area of the photodiodes increases from the center toward the periphery. Therefore, the attenuation of ... 01/18/07 - 20070012955 - Organic and inorganic hybrid photoelectric conversion device A photoelectric conversion device comprising: an inorganic photoelectric conversion film; and an organic photoelectric conversion film, wherein an insulating film between the inorganic photoelectric conversion film and the organic photoelectric conversion film has a thickness of from 1 to 6 μm, wherein the organic photoelectric conversion film has a multilayer ... 10/05/06 - 20060220069 - Isolation structures for preventing photons and carriers from reaching active areas and methods of formation Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure prevents photons and electrons originating in peripheral circuitry from reaching ... 10/05/06 - 20060220068 - Solid-state image pick-up unit and method of manufacturing the same A solid-state image pick-up unit comprises: a semiconductor substrate comprising an area in which a photoelectric converting portion is formed; and an electric charge transfer portion that transfers an electric charge formed by the photoelectric converting portion, wherein the electric charge transfer portion comprises: an electric charge transfer electrode including ... 08/24/06 - 20060186439 - Semiconductor device, a manufacturing method thereof, and a camera A semiconductor device includes a transfer channel for transferring charge generated by photoelectric conversion, an insulating film formed on the transfer channel, and a transfer electrode for applying a transfer voltage to the transfer channel via the insulating film. The insulating film has a first thickness and a second thickness ... 06/29/06 - 20060138470 - Cmos image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same are disclosed, in which a dark current is prevented from being generated between a device isolation film and a photodiode region to improve characteristics of the image sensor. ... 05/25/06 - 20060108613 - Cmos image sensor Provided is a CMOS image sensor including a pinned photodiode and a transfer transistor. The CMOS image sensor includes: a substrate; a gate electrode disposed on the substrate and electrically isolated from the substrate by a gate insulating layer; a first floating region disposed in the substrate of one side ... 05/11/06 - 20060097290 - Semiconductor structure for imaging detectors There is disclosed a photo-detector array including a plurality of sub-arrays of photo-detectors, the photo-detectors of each sub-array being formed on a substrate with an active area of each photo-detector being formed on a surface of the substrate, there further being formed for each photo-detector a conductive via through the ... 04/20/06 - 20060081890 - Cmos image sensor and method of manufacturing the same An image sensor includes a substrate with an epitaxial layer deposited thereon, a plurality of photodiodes buried in the epitaxial layer, and a plurality of field oxide films interposed between the photodiodes for insulating the photodiodes. Each of the field oxide films includes a trench formed on the epitaxial layer, ... 02/16/06 - 20060033127 - Pinned photodiode integrated with trench isolation and fabrication method A photo sensor with pinned photodiode structure integrated with a trench isolation structure. The photo sensor includes a substrate of a first conductivity type, at least one trench in the substrate, at least one doped region of the first conductivity type, and at least one doped region of a second ... 02/09/06 - 20060027837 - Solid-state imaging device, method for driving the same, method for manufacturing the same, camera, and method for driving the same A solid-state imaging device includes a two-dimensional array of photosensor sections on a semiconductor substrate, and a vertical transfer section including two-layer vertical transfer electrodes. The photosensor sections store signal charges generated by photoelectric conversion. The vertical transfer section reads signal charges from the photosensor sections and vertically transfers the ... 02/02/06 - 20060022226 - Ge photodetectors A phototransistor includes an emitter and a base that comprises Ge. A collector comprises Si. The base, emitter, and collector form at least one Si/Ge heterojunction allowing the unpinning of Fermi energy level (EF) of the phototransistor. ... 10/13/05 - 20050224844 - Solid-state image sensing device A drain region 8 of a modulation transistor TM, which outputs a pixel signal in accordance with a photoelectric charge while a threshold voltage of a channel between a source region 7 and the drain region 8 is controlled by the photoelectric charge stored in a modulating well 5, is ... 10/13/05 - 20050224843 - High dynamic range pixel amplifier A pixel cell with increased dynamic range is formed by providing a floating diffusion region having a variable capacitance, controlled by at least one gate having source and drain regions commonly connected to the floating diffusion region. The gate has an intrinsic capacitance which, when the gate is activated, is ... 08/04/05 - 20050167704 - Solid-state image pickup device A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion ... ### FreshPatents.com Support |