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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Charge Transfer Device > Majority Signal Carrier (e.g., Buried Or Bulk Channel, Or Peristaltic) > Responsive To Non-electrical External Signal (e.g., Imager) Responsive To Non-electrical External Signal (e.g., Imager)Responsive To Non-electrical External Signal (e.g., Imager) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/17/08 - 20080012048 - Semiconductor device and method for manufacturing same In a semiconductor device 10 including a structure where transfer electrodes 2a to 2c are disposed on a semiconductor substrate 1 via an insulation layer 3, a first semiconductor region 4 of a first conductivity type, a second semiconductor region 5 of a conductivity type opposite to the first conductivity ... 09/13/07 - 20070210342 - Vertical charge transfer active pixel sensor An active pixel sensor and method of operating an active pixel sensor comprising an N well of n type silicon formed in a p type silicon substrate and a P well of p type silicon is formed in the N well. A deep N well is formed of n type ... 08/23/07 - 20070194351 - Radiation tolerant ccd structure A CCD structure (20) tolerant to the adverse formation of traps resulting from exposure to irradiation by particles such as protons and neutrons is described. The CCD comprises an image plane (22) having a number of parallel transfer channels. Path defining structures (24), such as barrier implants, define a principal ... 05/03/07 - 20070096159 - Solid-state imaging device and method of driving the same A solid-state imaging device includes an N-type semiconductor substrate, an N-type impurity region provided in the surficial portion of the N-type semiconductor substrate, a photo-electric conversion unit formed in the N-type impurity region, a charge accumulation unit formed in the N-type impurity region so as to contact with the photo-electric ... 04/05/07 - 20070075338 - Image sensor and fabrication method thereof An image sensor includes a substrate having an active pixel sensor region defined therein, a plurality of first conductivity type photodiodes formed in the active pixel sensor region and a first conductivity-type first deep well formed in the active pixel sensor region in a location which does not include the ... 02/08/07 - 20070029579 - Cmos image sensor and method for fabricating the same A CMOS image sensor includes a substrate including a sensing part and a peripheral driving part; a first insulating interlayer formed over an entire surface of the substrate; a first metal line formed on the first insulating interlayer in each of the sensing and peripheral driving parts; a second insulating ... 02/01/07 - 20070023786 - Cmos imager with wide dynamic range pixel In one aspect of the present invention, a light sensor is provided in the active pixel sensor cell for sensing incident radiation. The voltage corresponding to the photon-generated or other radiation-generated charge in the active pixel sensor cell is stored on a storage node via a sample-and-hold capacitor. Additional elements, ... 01/18/07 - 20070012954 - Solid state image pickup device and endoscope A solid state image pickup device includes: a semiconductor substrate; a well formed in a surface layer of the semiconductor substrate; a light reception region formed in the well and including a plurality of charge accumulation regions formed in a matrix shape and a plurality of vertical CCDs formed along ... 12/14/06 - 20060278897 - Multispectral energy/power meter for laser sources A device for measuring optical power simultaneously for two or more spectral regions. Two or more photodetectors, such as photodiodes, measure the pulse energy and/or power emitted by a laser having output in two or more spectral regions. The laser radiation is transmitted through a diffuser or beamsplitter, then filtered ... 09/28/06 - 20060214195 - Solid-state imaging device A solid-state imaging device has a substrate in which are formed a pixel array portion having a plurality of pixels, and a peripheral circuitry portion. The device is characterized in that a first multilevel metallization structure is formed over the peripheral circuitry portion, and a second multilevel metallization structure thinner ... 07/13/06 - 20060151812 - Solid-state imaging device and method of manufacturing the same A solid-state imaging device including: a semiconductor substrate on which an imaging region having a light receiving section is formed; and a predetermined layer formed on the semiconductor substrate by planarization processing using liquid containing a metal element, wherein at least a first diffusion protection film is formed between the ... 07/06/06 - 20060145198 - Magnetic ram A memory element for a magnetic RAM, contained in a recess of an insulating layer, the recess including a portion with slanted sides extending down to the bottom of the recess, the memory element including a first magnetic layer portion substantially conformally covering the bottom of the recess and the ... 07/06/06 - 20060145197 - Cmos image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same provides a microlens pattern profile with a rectangular shape to facilitate a reflow process of a microlens and improve its curvature, thereby improving concentration efficiency of light and improving characteristics of the image sensor. The CMOS image sensor includes ... 07/06/06 - 20060145196 - High-sensitivity image sensor and fabrication method thereof A method of fabricating a high-sensitivity image sensor is disclosed. The disclosed method comprises: etching a predetermined region of active silicon and a buried oxide layer by using a mask over an SOI substrate to expose an N-type silicon substrate; implanting P-type ions into the exposed N-type silicon substrate to ... 06/22/06 - 20060131615 - Structures and methods for enhancing capacitors in integrated circuits Systems, devices, structures, and methods are described that inhibit dielectric degradation at high temperatures. An enhanced capacitor is discussed. The enhanced capacitor includes a first electrode, a dielectric that includes ditantalum pentaoxide, and a second electrode having a compound. The compound includes a first substance and a second substance. The ... 06/22/06 - 20060131614 - Memory cell structure A memory structure that reduces soft-errors for us in CMOS devices is provided. The memory cell layout utilizes transistors oriented such that the source-to-drain axis is parallel a shorted side of the memory cell. The dimensions of the memory cell are such that it has a longer side and a ... 06/15/06 - 20060124972 - Cross-fill pattern for metal fill levels, power supply filtering, and analog circuit shielding A cross-fill metal fill pattern technique is provided such that portions of a metal fill pattern are patterned to accomplish a secondary function. For instance, in the exemplary embodiments, ever other trace or line of interdigitated fingers is routed to a ground, while the interceding traces or lines of interdigitated ... 06/15/06 - 20060124971 - Semiconductor structure, semiconductor device, and method and apparatus for manufacturing the same A semiconductor device includes a non-single-crystal semiconductor film, a support substrate that supports the non-single-crystal semiconductor film, and an active device having a part of the non-single-crystal semiconductor film as a channel region. In particular, the channel region has an oxygen concentration not higher than 1×1018 atoms/cm3 and a carbon ... 06/15/06 - 20060124970 - Device for data exchange between a transmitter and a receiver The inventive data exchange device comprises a transmitter (SA4) fed by a power supply (VDDA), an electric cable (C1) whose first conducting wire is connected to a fixed potential point (GNDA) of the transmitter and second conducting wire is connected to a variable potential point of the transmitter and a ... 06/08/06 - 20060118830 - Msd raised metal interface features Provided are partially etched dielectric films with raised conductive features. Also provided are methods for forming the raised conductive features in the dielectric films, which methods include partially etching the dielectric films. ... 06/01/06 - 20060113571 - Semiconductor structure for isolating integrated circuits of various operation voltages A semiconductor structure includes an isolation ring disposed on a semiconductor substrate, surrounding first and second circuit areas. A buried isolation layer is continuously extended through the first circuit area and the second circuit area, in the semiconductor substrate. The buried isolation layer interfaces with the isolation ring, thereby isolating ... 05/25/06 - 20060108612 - Packaging A packaging (10) containing a product (11). The product (11) may be a solar powered light device (110). The packaging (10) includes a switch (23) that is operable to activate the product (11) while the product (11) is still within the packaging (10) so that a user may observe operation ... 05/25/06 - 20060108611 - Image sensing device and method of A two-dimensional, temporally modulated electromagnetic wavefield, preferably in the ultraviolet, visible or infrared spectral range, can be locally detected and demodulated with one or more sensing elements. Each sensing element consists of a resistive, transparent electrode (E) on top of an insulated layer (O) that is produced over a semiconducting ... 03/23/06 - 20060060890 - Reflection-transmission type liquid crystal display device and method for manufacturing the same Disclosed are a liquid crystal display (LCD) device and a method for manufacturing the LCD device. The LCD device has a substrate including a display region and a pad region located in a periphery of the display region, the display region having a transparent electrode, the pad region having a ... 03/09/06 - 20060049431 - Solid-state image sensor A solid-state image sensor capable of improving detection sensitivity for an output signal is provided. This solid-state image sensor comprises a first gate electrode formed on a semiconductor substrate, a first impurity region formed on the semiconductor substrate at a first distance from the first gate electrode for receiving the ... 02/23/06 - 20060038202 - Heatsink apparatus and thermally-conductive intermediate material for dissipating heat in semiconductor packages A semiconductor package comprising a die adjacent a lead frame die pad, said lead frame die pad adapted to dissipate heat from the die. The package further comprises a thermally-conductive material abutting the die and a heatsink abutting the thermally-conductive material, said heatsink facing a direction opposite from the lead ... 02/02/06 - 20060022222 - Light-emitting device with a current blocking structure and method for making the same A light emitting device includes a substrate, an epitaxial structure positioned on the substrate, an ohmic contact electrode positioned on the epitaxial structure and a current blocking structure positioned in the epitaxial structure. The epitaxial structure includes a bottom cladding layer, an upper cladding layer, a light-emitting layer positioned between ... 02/02/06 - 20060022221 - Integrated circuit chip utilizing oriented carbon nanotube conductive layers A conductive layer in an integrated circuit is formed as a sandwich having multiple sublayers, including at least one sublayer of oriented carbon nanotubes. The conductive layer sandwich preferably contains two sublayers of carbon nanotubes, in which the carbon nanotube orientation in one sublayer is substantially perpendicular to that of ... 01/26/06 - 20060017073 - Semiconductor device and method of fabricating the same A first buffer layer is formed on a substrate at a lower temperature than a single-crystal-growth-temperature, one or more of a layer composed of a nitride containing neither Ga nor In, a layer which has two or more thin films having different moduli of elasticity cyclically laminated therein, and a ... 01/12/06 - 20060006425 - Thin film transistor substrate and its manufacture A semiconductor layer with a threshold voltage for n-channel is formed and patterned to TFT island areas. A gate insulating film is deposited. The first gate electrode layer is fomed and pattered to form an opening. Phosphorous ions are implanted into a p-channel TFT in the opening to set threshold ... 01/12/06 - 20060006424 - Light emitting apparatus and method for manufacturing the same The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic ... 01/12/06 - 20060006423 - Semiconductor wafer and manufacturing method thereof A semiconductor wafer and its manufacturing method are provided where the current driving capability of a MOS transistor can be sufficiently enhanced. An SOI layer wafer in which an SOI layer (32) is formed has a <100> crystal direction notch (32a) and a <110> crystal direction notch (32b). The SOI ... 01/12/06 - 20060006422 - Semiconductor package substrate having bonding pads with plated layer thereon and process of manufacturing the same A semiconductor package substrate is provided having a plurality of bonding pads on at least one surface thereof and covered by a conductive film. A photoresist layer formed over the conductive film has a plurality of first openings for exposing portions of the conductive film corresponding to the bonding pads. ... 12/22/05 - 20050280043 - Magnetoresistive element and magnetic memory There are provided a first reference layer, in which a direction of magnetization is fixed, and a storage layer including a main body, in which a length in an easy magnetization axis direction is longer than a length in a hard magnetization axis direction, and a projecting portion provided to ... 12/22/05 - 20050280042 - Wafer bonding method A method of coupling substrates together includes steps of providing first and second substrates. The second substrate includes a conductive bonding region positioned on its surface. Heat is provided to the conductive bonding region to reduce its number of defects. The surface of the conductive bonding region is bonded to ... 12/15/05 - 20050274987 - Inexpensive method of fabricating a higher performance capacitance density mimcap integrable into a copper interconnect scheme A method to integrate MIM capacitors into conductive interconnect levels, with low cost impact, and high yield, reliability and performance than existing integration methods is provided. This is accomplished by recessing a prior level dielectric for MIM capacitor level alignment followed by deposition and patterning of the MIM capacitor films. ... 11/24/05 - 20050258457 - Cmos imager pixel designs A charge storage capacitor which is connected to various light sensitive and/or electrical elements of a CMOS imager, as well as methods of formation, are disclosed. The charge storage capacitor may be formed entirely over a field oxide region of the CMOS imager, entirely over an active area of a ... 09/22/05 - 20050205898 - Electronic imaging device An electronic imaging device (10) comprises a base layer (20) containing electrical functional circuitry, the base layer (20) having a first side (22) for interconnection of the circuitry and a second side (24) which serves as a photo-detection side. The second side (24) has exposed photosensitive electrical elements arranged in ... 09/15/05 - 20050199916 - Method and device for a main board commonly associated with ddr2 or ddr1 A method and device for a main board commonly shared with DDR2 or DDR1 includes allowing the main board being associated with a voltage transducer and a DDR2 connector, the voltage transducer outputting a voltage suitable for DDR2 to the DDR2 connector via the output end thereof in case of ... 09/08/05 - 20050194618 - Insulated gate transistor Submitted herewith is a check in the amount of $650.00 to cover the additional fee for thirteen (13) claims in excess of twenty total. Should the check prove insufficient for any reason or should an additional fee be due, authorization is hereby given to charge any such deficiency or additional ... 09/08/05 - 20050194617 - Solid-state imaging device A solid-state imaging device having, in each of unit pixels, an on-chip microlens composed of plural convex lens parts for each of photoelectric conversion elements provided on a semiconductor chip is disclosed. A floating diffusion part and a signal-charge read gate for taking out a signal charge from the photoelectric ... 07/14/05 - 20050151170 - Protected switch and techniques to manufacture the same Briefly, micromechanical system (MEMS) switches that utilize protective layers to protect electrical contact points. ... 06/02/05 - 20050116260 - Focal plane arrays in type ii-superlattices The subject invention comprises a type-II superlattice photon detector and focal planes array and method for making. The device may be either a binary or tertiary system with a type-II band alignment. ... 06/02/05 - 20050116259 - Solid-state imaging device and method of driving the same The MOS type solid-state imaging device has plural pixels each of which comprises a photo-diode and a photo-detector on a substrate. The photo-diode has a charge generating region to generate photo-generated charges upon light illumination. The photo-detector has a well region with a hole pocket to accumulate the photo-generated charges ... 06/02/05 - 20050116258 - Two-modulus prescaler circuit In the dual modulus prescaler circuit, an output terminal of the first multi-input logic gate circuit is connected to a data input terminal of a first D flip-flop circuit; output terminals of the first to (n-2)th D flip-flop circuits are, respectively, connected to data input terminals of the second to ... ### FreshPatents.com Support |