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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Charge Transfer Device > Majority Signal Carrier (e.g., Buried Or Bulk Channel, Or Peristaltic) > High Resistivity Channel (e.g., Accumulation Mode) Or Surface Channel (e.g., Transfer Of Signal Charge Occurs At The Surface Of The Semiconductor) Or Minority Carriers At Input (i.e., Surface Channel Input) High Resistivity Channel (e.g., Accumulation Mode) Or Surface Channel (e.g., Transfer Of Signal Charge Occurs At The Surface Of The Semiconductor) Or Minority Carriers At Input (i.e., Surface Channel Input)High Resistivity Channel (e.g., Accumulation Mode) Or Surface Channel (e.g., Transfer Of Signal Charge Occurs At The Surface Of The Semiconductor) Or Minority Carriers At Input (i.e., Surface Channel Input) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/26/06 - 20060017072 - Cmos active pixel sensor with improved dark current and sensitivity An active pixel sensor which provides reduced dark current, improved sensitivity, and improved modulation transfer function. An N well, surrounded by a P well is formed in a P type epitaxial substrate. A P+ region is formed extending from within the P well into the substrate leaving a gap between ... ### FreshPatents.com Support |