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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Heterojunction Device > Heterojunction Formed Between Semiconductor Materials Which Differ In That They Belong To Different Periodic Table Groups (e.g., Ge (group Iv) - Gaas (group Iii-v) Or Inp (group Iii-v) - Cdte (group Ii-vi)) Heterojunction Formed Between Semiconductor Materials Which Differ In That They Belong To Different Periodic Table Groups (e.g., Ge (group Iv) - Gaas (group Iii-v) Or Inp (group Iii-v) - Cdte (group Ii-vi))Heterojunction Formed Between Semiconductor Materials Which Differ In That They Belong To Different Periodic Table Groups (e.g., Ge (group Iv) - Gaas (group Iii-v) Or Inp (group Iii-v) - Cdte (group Ii-vi)) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.09/13/07 - 20070210334 - Phase change memory device and method of fabricating the same Example embodiments relate to a semiconductor memory device and a method of fabricating the same. Other example embodiments relate to a phase change memory device and a method of fabricating the same. There are provided a phase change memory device and a method of fabricating the same for improving or ... 09/13/07 - 20070210333 - Hybrid semiconductor device A hybrid device including a silicon based MOSFET operatively connected with a GaN based device. ... 02/15/07 - 20070034902 - Semiconductor device and method for manufacturing the same It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain ... 01/25/07 - 20070018200 - Single frequency laser This invention relates to generally to semiconductor devices, for example lasers and more particularly to single frequency lasers and is directed at overcoming problems associated with the manufacture of these devices. In particular, a laser device is provided formed on a substrate having a plurality of layers (1,2,3,4,5), the laser ... 01/25/07 - 20070018199 - Nitride-based transistors and fabrication methods with an etch stop layer A III-Nitride field-effect transistor, specifically a HEMT, comprises a channel layer, a barrier layer on the channel layer, an etch stop layer on the cap layer, a dielectric layer on the etch stop layer, a gate recess that extends to the barrier layer, and a gate contact in the gate ... 10/05/06 - 20060220065 - Semiconductor device and fabrication method therefor A semiconductor device includes a substrate, a GaN-based semiconductor layer formed on the substrate, a gate electrode embedded in the GaN-based semiconductor layer, a source electrode and a drain electrode formed on both sides of the gate electrode, a first recess portion formed between the gate electrode and the source ... 09/07/06 - 20060197108 - Total ionizing dose suppression transistor architecture A total ionizing dose suppression architecture for a transistor and a transistor circuit uses an “end cap” metal structure that is connected to the lowest potential voltage to overcome the tendency of negative charge buildup during exposure to ionizing radiation. The suppression architecture uses the field established by coupling the ... 08/24/06 - 20060186438 - Device for thermal sensing The present invention provides a device for thermal sensing which uses a replaceable or disposable substrate comprising channels for receiving a sample to be measured. The device according to the invention is cost-effective as the replaceable or disposable substrate can be reused. ... 07/13/06 - 20060151809 - Optical semiconductor unit An optical semiconductor device includes an optical semiconductor chip, a light permeable member covering the chip, and a reflector formed with an accommodation space for accommodating the light permeable member. The light permeable member includes a convex lens for converging light emitted from the optical semiconductor chip. The reflector includes ... 06/15/06 - 20060124965 - Capacitor that includes high permittivity capacitor dielectric A decoupling capacitor is formed on a semiconductor substrate that includes a silicon surface layer. A substantially flat bottom electrode is formed in a portion of the semiconductor surface layer. A capacitor dielectric overlies the bottom electrode. The capacitor dielectric is formed from a high permittivity dielectric with a relative ... 05/25/06 - 20060108606 - Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. High electron mobility transistors are provided that include ... 05/18/06 - 20060102933 - Iii-v group compound semiconductor light emitting device and manufacturing method thereof A light emitting device including a III-V group compound semiconductor includes a first stacked body and a second stacked body. The first stacked body includes a III-V group compound semiconductor stacked body, and a reflection layer, a first diffusion suppressing layer and a first metal layer formed on one main ... 05/11/06 - 20060097283 - Group iii-nitride-based compound semiconductor device In a group III-nitride-based compound semiconductor device 100, an intermediate layer 108 is 5 provided between a p-AlGaN layer 107 and a p-GaN layer 109, to each of which an acceptor impurity is added. On this occasion, the intermediate layer 108 is doped with a donor impurity in a concentration, ... 05/04/06 - 20060091421 - Semiconductor laser device A semiconductor laser device according to the present invention comprises: an n-band discontinuity reduction layer (n-BDR layer) disposed on an n-GaAs substrate and the n-BDR layer including an AlGaAs layer whose concentration of Si doped as an n-type impurity is in a range from 0.2×1018 cm−3 to 1.4×1018 cm−3; an ... 04/20/06 - 20060081880 - Organic field effect transistor and method for producing the same wherein R1 and R3 each denotes a group for forming an aromatic ring or a heteroaromatic ring which may have a substituent, together with a group to be bonded to R1 or R3; R2 and R4 each denotes a hydrogen atom, an alkyl group, an alkoxy group, an ester group ... 04/13/06 - 20060076578 - Recycling a wafer comprising a buffer layer, after having separated a thin layer therefrom A donor wafer resulting from a method of recycling the wafer after detaching at least one useful layer. The donor wafer includes a substrate; a buffer structure on the substrate; a protective layer associated with the buffer structure; and a post detachment layer located above the buffer structure and presenting ... 04/06/06 - 20060071240 - Integrated circuit with at least one bump In an integrated circuit (1) having a substrate (3) and having a signal-processing circuit (4) which is produced at a surface (8) of the substrate (3), there is provided on the substrate surface (8) a protective layer (12) that has at least one aperture (13) through which a second contact ... 03/23/06 - 20060060888 - Growth of iii-nitride light emitting devices on textured substrates A III-nitride light emitting device is grown on a textured substrate, in order to reduce the amount of total internal reflection at the interface between the substrate and the III-nitride layers. In some embodiments, the device includes a first growth region substantially free of voids, and a second growth region ... 03/02/06 - 20060043419 - Semiconductor substrate and semiconductor device manufactured by epitaxial growth on the semiconductor substrate A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the surface from {0001} plane towards <1-100> direction lying in a ... 01/19/06 - 20060011945 - Photocatalyst and process for purifying gas effluent by photocatalytic oxidation The photocatalyst based on a composite WO3—SiC/TiO2 semiconductor and subjected to radiation whose wavelength is at least partly less than 400 nm gives photocatalytic oxidation of volatile organic compounds and leads to their total mineralisation into CO2 and H2O. The process for the photocatalytic purification of industrial, agricultural or domestic ... 01/12/06 - 20060006419 - Method of testing a memory module and hub of the memory module A method of testing a memory module comprising converting a hub of the memory module into a transparent mode, providing first data corresponding to a first address to the hub of the memory module, providing the first data of the hub of the memory module to a first address of ... 12/29/05 - 20050285145 - Web image transfer system using led based lighting systems A system for transmitting a color image over a network. The system has a light source, a first reference color chart exhibiting a first spectral response, a camera capturing an image of the first reference color chart for transmission to a receiver, and a receiver for displaying the image. The ... 12/22/05 - 20050280030 - Dual gate layout for thin film transistor A dual gate layout of a thin film transistor of liquid crystal display to alleviate dark current leakage is disclosed. The layout comprises (1) a polysilicon on a substrate having a L-shaped or a snake shaped from top-view, which has a heavily doped source region, a first lightly doped region, ... 12/08/05 - 20050269598 - Silicon barrier capacitor device structure The present invention disclosed a silicon barrier capacitor device structure. By applying CVD or PVD technologies to deposit poly-silicon layers as the dielectric of capacitor on the doping region of the wafer, then implant a high-density (1016˜1021/cm3) impurity of the group III or group V elements and oxygen ion or ... 12/01/05 - 20050263794 - Integrated circuitry Semiconductor processing methods include forming a plurality of patterned device outlines over a semiconductor substrate, forming electrically insulative partitions or spacers on at least a portion of the patterned device outlines, and forming a plurality of substantially identically shaped devices relative to the patterned device outlines. Individual formed devices are ... 12/01/05 - 20050263793 - Wire bonding method and apparatus for integrated circuit Wire bonding methods and apparatuses are described herein. In one aspect of the invention, an exemplary apparatus includes a plurality of electrically conductive contacts disposed on a surface of the IC device, the plurality of electrically conductive contacts being disposed in at least two rows, a plurality of first return ... 11/10/05 - 20050247958 - Twisted nematic micropolarizer and its method of manufacturing The invention is a method for creating a micropolarizer, including providing a first plate having a first and a second surface, providing a second plate having a first and a second surface. Then coating a polyimide on each of the first surface of the two plates followed by rubbing the ... 11/03/05 - 20050242374 - Semiconductor structure integrated under a pad An integrated semiconductor structure has a substrate, a semiconductor element located on the substrate, a pad metal, metal layers located between the pad metal and the substrate, and insulation layers that separate the metal layers from one another. The pad metal extends over at least -part of the semiconductor element. ... 10/27/05 - 20050236648 - Inspection method and inspection system using charged particle beam Secondary electrons and back scattered electrons generated by irradiating a wafer to be inspected such as a semiconductor wafer with a charged particle beam are detected by a detector. A signal proportional to the number of detected electrons is generated, and an inspection image is formed on the basis of ... 10/20/05 - 20050230708 - Sensor with at least one micromechanical structure, and method for producing it It is provided that in the sensor of the invention, the covering (13) comprises a first layer (32) (deposition layer) that is permeable to an etching medium and the reaction products, and a hermetically sealing second layer (34) (sealing layer) located above it, and that in the method of the ... 10/13/05 - 20050224840 - Dual-oxide transistors for the improvement of reliability and off-state leakage The invention provides a transistor having low leakage currents and methods of fabricating the transistor on a semiconductor substrate. The transistor has a gate and a nonuniform gate oxide under the gate. ... 09/01/05 - 20050189567 - Wire loop, semiconductor device having same, wire bonding method and wire bonding apparatus A wire loop comprises a wire connecting a first bonding point and a second bonding point therethrough, wherein the wire has a crushed part formed therein by crushing the part of the wire and a top of a ball bonded to the first bonding point with a capillary. The wire ... 09/01/05 - 20050189566 - Switching power-supply module A switching power-supply module includes circuit boards, power conversion circuit sections provided on the respective circuit boards, conductor land patterns provided with spacing therebetween along edges of the circuit boards, conductor terminals for interconnecting the conductor land patterns. The circuit boards are stacked with spacing therebetween with the corresponding conductor ... 08/25/05 - 20050184313 - Semiconductor device and method for mitigating electrostatic discharge (esd) A semiconductor device including a PCB including conductive patterns formed on at least one surface of the PCB, external connection terminals including at least one ground terminal and coupled to the conductive patterns, at least one semiconductor chip mounted on a surface of the PCB, and an ESD protection pattern ... 08/18/05 - 20050179057 - System semiconductor device and method of manufacturing the same A system semiconductor device includes a system LSI cell portion and a global wiring layer. The system LSI cell portion has a plurality of functional blocks for realizing specific functions on a semiconductor chip. The global wiring layer has a wiring layer on a semiconductor substrate. The system LSI cell ... 08/18/05 - 20050179056 - System for resonant circuit tuning The present invention provides a system for producing a tunable resonant circuit (200), where the resonant circuit utilizes both integrated semiconductor devices and discrete components. The system provides a driver circuit (208) instantiated within a first integrated semiconductor device (210), an inductive load (204), and a resistive element (202) intercoupled ... 08/11/05 - 20050173731 - Anisotropic conductive sheet and its manufacturing method An anisotropic conductive sheet interposed between a circuit board such as a substrate and various circuit parts to render them conductive and its manufacturing method. The anisotropic conductive sheet has a fine pitch required by the recent highly integrated circuit boards and electronic parts, and exhibits conductivity in only the ... 07/21/05 - 20050156197 - Organic semiconductor element By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved particularly in a photoelectronic device using an organic semiconductor. Between an ... 07/07/05 - 20050145885 - I/o architecture for integrated circuit package A circuit package may include an upper surface of first conductive elements and second conductive elements. The first conductive elements may receive input/output signals from respective conductive elements of an integrated circuit die, and the second conductive elements may receive a first plurality of the input/output signals from respective ones ... 06/30/05 - 20050139864 - Multi-layer substrate structure for reducing layout area The present invention provides a multi-layer substrate structure for reducing layout area, including a first core layer, a second core layer, and a set of coupled transmission line. The first core layer includes a first surface connected to a power supply layer and a second surface corresponding to the first ... 06/23/05 - 20050133824 - Method for manufacturing semiconductor device, adhesive sheet for use therein and semiconductor device A series of semiconductor devices includes: (i) a plurality of semiconductor elements having electrodes; (ii) a plurality of electrically conductive parts formed around and electrically connected to each of the semiconductor elements; and (iii) a sealing resin in which the plurality of semiconductor elements and the plurality of electrically conductive ... 06/23/05 - 20050133823 - Method and apparatus for forming a wiring, wiring board, and ink set A method for forming a wiring according to the present invention includes supplying to a substrate a first liquid containing a first component to form a first pattern and a second liquid containing a second component to form a second pattern to come into contact with each other, the second ... 06/23/05 - 20050133822 - Apparatus for pulse testing a mram device and method therefore Methods and apparatus are provided for testing a magnetoresistive random access memory (MRAM). A magnetoresistive tunnel junction (MTJ) has a first terminal, a second terminal, and a third terminal. A source measuring unit is coupled to a first terminal of a MTJ to provide DC biasing. A current preamp has ... 06/16/05 - 20050127403 - Rram circuit with temperature compensation A temperature compensated RRAM sensing circuit to improve the RRAM readability against temperature variations is disclosed. The circuit comprises a temperature dependent element to control the response of a temperature compensated circuit to generate a temperature dependent signal to compensate for the temperature variations of the resistance states of the ... 06/16/05 - 20050127402 - Configurable input/output terminals Configuring chip I/O terminals such that they may be input, output, or bi-directional terminals. Furthermore, the I/O terminals may be configured with different signal sources if they are output or bi-directional terminals. In addition, the terminals may be configured to be inverted when operating in either direction. A mechanism is ... 06/16/05 - 20050127401 - Silicon-based visible and near-infrared optoelectric devices In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the ... 06/09/05 - 20050121697 - Storage device A storage device includes a first electrode, a second electrode facing the first electrode, an inter-electrode material layer provided between the first electrode and the second electrode, and a voltage application unit applying a predetermined voltage to the first and the second electrodes. Furthermore, an oxidation-reduction active material changeable into ... 06/02/05 - 20050116256 - Molecular memory device A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of ... 06/02/05 - 20050116255 - Magnetic memory device A memory device is proposed which enables to guarantee the operation of MRAM elements being magnetically shielded against a large external magnetic fields without being affected by an internal leakage magnetic field. The MRAM elements 30 which are shielded by magnetic shield layers 33, 34 are placed at an intermediate ... ### FreshPatents.com Support |