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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Heterojunction Device > Field Effect Transistor > Doping On Side Of Heterojunction With Lower Carrier Affinity (e.g., High Electron Mobility Transistor (hemt))

Doping On Side Of Heterojunction With Lower Carrier Affinity (e.g., High Electron Mobility Transistor (hemt))

Doping On Side Of Heterojunction With Lower Carrier Affinity (e.g., High Electron Mobility Transistor (hemt)) patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

07/31/14 - 20140209979 - Metamorphic growth of iii-v semiconductor on silicon substrate by mocvd for high speed iii-v transistors
A III-V semiconductor device on a silicon substrate is constructed with a silicon (Si) substrate onto which gallium arsenide (GaAs) indium phosphide (InP) and aluminum indium arsenide (AlInAs) to form a structure of AlInAs over InP over GaAs over Si. The GaAs is applied in at least one layer over...

07/31/14 - 20140209980 - Semiconductor device and method for manufacturing the same
A method for manufacturing a semiconductor device includes forming a buffer layer made of a nitride semiconductor, forming a channel layer made of a nitride semiconductor over the buffer layer, forming a barrier layer made of a nitride semiconductor over the channel layer, forming a cap layer made of a...

07/24/14 - 20140203329 - Nitride electronic device and method for fabricating nitride electronic device
Provided is a nitride electronic device having a structure that allows the reduction of leakage by preventing the carrier concentration from increasing in a channel layer. An inclined surface and a primary surface of a semiconductor stack extend along first and second reference planes R1, R2, respectively. The primary surface...

07/17/14 - 20140197459 - Semiconductor device
Semiconductor device comprising a source electrode, a drain electrode and a semiconducting layer consisting of a single or double 2-dimensional layer(s) made from one of the following materials: MoS2, MoSe2, WS2, WSe2, MoTe2 or WTe2....

07/17/14 - 20140197460 - Semiconductor device, method for manufacturing the same, power supply device, and high-frequency amplifier
A semiconductor device includes: a compound semiconductor stack structure including a plurality of compound semiconductor layers stacked over a semiconductor substrate; and a first insulating film covering the surface of the compound semiconductor stack structure, the first insulating film being a silicon nitride film including, on the top side, a...

07/17/14 - 20140197461 - Semiconductor structure including a spatially confined dielectric region
There are disclosed herein various implementations of semiconductor structures including one or more spatially confined dielectric regions. In one exemplary implementation, such a semiconductor structure includes a III-Nitride field-effect transistor (FET) having a drain, a source, and a gate, fabricated over a substrate. A spatially confined dielectric region is formed...

07/17/14 - 20140197462 - Iii-nitride transistor with high resistivity substrate
There are disclosed herein various implementations of semiconductor structures including high resistivity substrates. In one exemplary implementation, such a semiconductor structure includes a substrate having a resistivity of greater than or approximately equal to one kiloohm-centimeter (1 kΩ-cm), and a III-N high electron mobility transistor (HEMT) having a drain, a...

07/10/14 - 20140191286 - Compressive strained iii-v complementary metal oxide semiconductor (cmos) device
A semiconductor device including a first lattice dimension III-V semiconductor layer present on a semiconductor substrate, and a second lattice dimension III-V semiconductor layer that present on the first lattice dimension III-V semiconductor layer, wherein the second lattice dimension III-V semiconductor layer has a greater lattice dimension than the first...

07/10/14 - 20140191287 - Compressive strained iii-v complementary metal oxide semiconductor (cmos) device
A semiconductor device including a first lattice dimension III-V semiconductor layer present on a semiconductor substrate, and a second lattice dimension III-V semiconductor layer that present on the first lattice dimension III-V semiconductor layer, wherein the second lattice dimension III-V semiconductor layer has a greater lattice dimension than the first...

07/10/14 - 20140191288 - Semiconductor device and method for manufacturing semiconductor device
A method for manufacturing a semiconductor device includes forming an electron transit layer on a semiconductor substrate, forming an electron supply layer on the electron transit layer, forming a cap layer on the electron supply layer, forming a protection layer on the cap layer, the protection layer having an opening...

06/26/14 - 20140175514 - Ring-shaped transistors providing reduced self-heating
A ring-shaped transistor includes a set of gates. Each gate of the set is disposed between a corresponding source and a corresponding drain. The set of gates are arranged such that all of the set of gates cannot be aligned with fewer than three imaginary straight lines drawn through the...

06/26/14 - 20140175515 - Nonplanar iii-n transistors with compositionally graded semiconductor channels
A III-N semiconductor channel is compositionally graded between a transition layer and a III-N polarization layer. In embodiments, a gate stack is deposited over sidewalls of a fin including the graded III-N semiconductor channel allowing for formation of a transport channel in the III-N semiconductor channel adjacent to at least...

06/26/14 - 20140175516 - Two-dimensional electron gas sensor and methods for making and using the sensor
The disclosed technology generally relates to a sensor and methods for making and using the same, and more particularly relates to a sensor configured to sense the presence of at least one fluidum. In one aspect, a sensor for sensing a fluidum in a space adjoining the sensor comprises a...

06/26/14 - 20140175517 - Field effect transistor
A field effect transistor (FET) disclosed herein comprising a substrate, a C-doped semiconductor layer disposed on the substrate, a channel layer disposed on the C-doped semiconductor layer, and an electron supply layer disposed on the channel layer. The FET further comprises a diffusion barrier layer disposed between the C-doped semiconductor...

06/26/14 - 20140175518 - Iii-v hemt devices
A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band...

06/19/14 - 20140167111 - Transistor and method of fabricating the same
A field effect transistor includes an active layer and a capping layer sequentially stacked on a substrate, and a gate electrode penetrating the capping layer and being adjacent to the active layer. The gate electrode includes a foot portion adjacent to the active layer and a head portion having a...

06/19/14 - 20140167112 - Cascode circuit integration of group iii-n and group iv devices
In an exemplary implementation, an integrated assembly includes a printed circuit board, and a depletion mode III-Nitride transistor die and a group IV transistor die coupled to the printed circuit board. The depletion mode III-Nitride transistor die is situated on one side of the printed circuit board and the group...

06/19/14 - 20140167113 - Gallium nitride based semiconductor devices and methods of manufacturing the same
Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heat dissipation substrate (that is, a thermal conductive substrate); a GaN-based multi-layer arranged on the heat dissipation substrate and having N-face polarity; and a heterostructure field effect transistor (HFET) or a...

06/19/14 - 20140167114 - Method for growing iii-v epitaxial layers
Disclosed are methods of growing III-V epitaxial layers on a substrate, semiconductor structures thus obtained, and devices comprising such semiconductor structures. An example semiconductor substrate includes a substrate and a buffer layer on top of the substrate, where a conductive path is present between the substrate and buffer layer. A...

06/12/14 - 20140159115 - Transistor and method of fabricating the same
A high electron mobility transistor includes a T-type gate electrode disposed on a substrate between source and drain electrodes and insulating layers disposed between the substrate and the T-type gate electrode. The insulating layers include first, second, and third insulating layers. The third insulating layer is disposed between the substrate...

06/12/14 - 20140159116 - Iii-nitride device having an enhanced field plate
In an exemplary implementation, a semiconductor device includes a III-nitride heterojunction including a III-nitride barrier layer situated over a III-nitride channel layer to form a conduction channel including a two-dimensional electron gas. The semiconductor device further includes a gate electrode coupled to a field plate. The field plate includes a...

06/12/14 - 20140159117 - Semiconductor device and method of manufacturing the semiconductor device
A semiconductor device includes a channel layer; and a high resistance layer that is provided on the channel layer, and is made of a semiconductor with high resistance which has a conduction band position higher than that of the semiconductor which forms the channel layer. The semiconductor device includes a...

06/12/14 - 20140159118 - Iii-nitride transistor with source-connected heat spreading plate
Disclosed are semiconductor devices and methods for manufacturing them. An example device may include a III-nitride stack having a front side surface and a back side surface. The III-nitride stack may be formed of at least a first layer and a second layer, between which a heterojunction may be formed,...

06/12/14 - 20140159119 - Method for growing iii-v epitaxial layers and semiconductor structure
Disclosed are methods of growing III-V epitaxial layers on a substrate, a semiconductor structure comprising a substrate, a device comprising such a semiconductor structure, and an electronic circuit. Group III-nitride devices, such as, for example, high-electron-mobility transistors, may include a two-dimensional electron gas (2DEG) between two active layers. For example,...

06/05/14 - 20140151747 - High electron mobility transistor including plurality of gate electrodes
According to example embodiments, a high electron mobility transistor includes: a channel layer including a first semiconductor material; a channel supply layer on the channel layer and configured to generate a 2-dimensional electron gas (2DEG) in the channel layer, the channel supply layer including a second semiconductor material; source and...

06/05/14 - 20140151748 - Compound semiconductor device and manufacturing method of the same
The compound semiconductor device includes a first-compound-semiconductor-layer, a second-compound-semiconductor-layer formed on an upper side of the first-compound-semiconductor-layer and having a band gap larger than the band gap of the first-compound-semiconductor-layer, a p-type third-compound-semiconductor-layer formed on an upper side of the second-compound-semiconductor-layer, an electrode formed on an upper side of the...

06/05/14 - 20140151749 - High electron mobility transistor and method of manufacturing the same
According to example embodiments, a high electron mobility transistor (HEMT) includes a channel layer; a channel supply layer on the channel layer; a source electrode and a drain electrode spaced apart from each other on one of the channel layer and the channel supply layer; a gate electrode on a...

05/29/14 - 20140145243 - Group iii-nitride-based transistor with gate dielectric including a fluoride - or chloride- based compound
Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer layer including gallium (Ga) and nitrogen (N) and a barrier layer disposed on the buffer layer, the barrier layer including...

05/22/14 - 20140138746 - Pseudomorphic high electron mobility transistor comprising doped low temperature buffer layer
A pseudomorphic high electron mobility transistor (PHEMT) comprises a substrate comprising a Group III-V semiconductor material, a buffer layer disposed over the substrate, wherein the buffer layer comprises microprecipitates of a Group V semiconductor element and is doped with an N-type dopant, and a channel layer disposed over the buffer...

05/22/14 - 20140138747 - Hetero junction field effect transistor and method for manufacturing the same
Hetero junction field effect transistors and methods of fabricating such transistors are disclosed wherein: a first compound semiconductor layer is provided on a substrate; a second compound semiconductor layer is provided on the first compound semiconductor layer; a gate insulating layer is provided on the second compound semiconductor layer; and...

05/15/14 - 20140131771 - Semiconductor structure including a semiconductor-on-insulator region and a bulk region, and method for the formation thereof
A structure comprises a semiconductor substrate, a semiconductor-on-insulator region and a bulk region. The semiconductor-on-insulator region comprises a first semiconductor region, a dielectric layer provided between the semiconductor substrate and the first semiconductor region, and a first transistor comprising an active region provided in the first semiconductor region. The dielectric...

05/08/14 - 20140124836 - Power semiconductor device
A power semiconductor device is disclosed. The power semiconductor device includes a substrate, a first semiconductor layer disposed on the substrate, a second semiconductor layer disposed on the first semiconductor layer, a third semiconductor layer disposed on the second semiconductor layer and exposing a portion of the second semiconductor layer,...

05/08/14 - 20140124837 - Nitride semiconductor device and method for manufacturing same
A nitride semiconductor device includes an undoped GaN layer (1) and an undoped AlGaN layer (2) that are formed on an Si substrate (10), and ohmic electrodes (a source electrode (11) and a drain electrode (12)) that are formed on the undoped GaN layer (1) and the undoped AlGaN layer...

05/01/14 - 20140117410 - Semiconductor device
A semiconductor device includes: a first semiconductor layer formed on a substrate and formed of a nitride-based semiconductor; a second semiconductor layer formed on a surface of the first semiconductor layer and formed of a nitride-based semiconductor having a wider band-gap than the first semiconductor layer; first and second electrodes...

04/24/14 - 20140110758 - Semiconductor device and method for producing same
The semiconductor device is formed in the form of a GaN-based stacked layer including an n-type drift layer 4, a p-type layer 6, and an n-type top layer 8. The semiconductor device includes a regrown layer 27 formed so as to cover a portion of the GaN-based stacked layer that...

04/24/14 - 20140110759 - Semiconductor device
A semiconductor device includes a first hetero-junction body in which a first channel layer and a first barrier layer are bonded together; a second hetero-junction body in which a second channel layer formed on the first hetero-junction body and a second barrier layer are bonded together; a gate electrode in...

04/17/14 - 20140103398 - Rf power hemt grown on a silicon or sic substrate with a front-side plug connection
A compound semiconductor device includes a plurality of high-resistance crystalline silicon epitaxial layers and a plurality of activated dopant regions disposed in a same region of at least some of the epitaxial layers so that the activated dopant regions are aligned in a vertical direction perpendicular to a main surface...

04/17/14 - 20140103399 - Gallium nitride power devices
Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face and nitride face devices formed as enhancement mode devices....

04/10/14 - 20140097469 - Hydrogen mitigation schemes in the passivation of advanced devices
Embodiments of a Silicon Nitride (SiN) passivation structure for a semiconductor device and methods of fabrication thereof are disclosed. In general, a semiconductor device includes a semiconductor body and a SiN passivation structure over a surface of the semiconductor body. In one embodiment, the SiN passivation structure includes one or...

04/10/14 - 20140097470 - High-electron mobility transistor and method of manufacturing the same
According to example embodiments, a HEMT includes a channel supply layer on a channel layer, a p-type semiconductor structure on the channel supply layer, a gate electrode on the p-type semiconductor structure, and source and drain electrodes spaced apart from two sides of the gate electrode respectively. The channel supply...

04/10/14 - 20140097471 - Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
In an exemplary implementation, a III-nitride semiconductor device includes a III-nitride heterojunction including a first III-nitride body situated over a second III-nitride body to form a two-dimensional electron gas. The III-nitride semiconductor device further includes a gate well formed in a dielectric body, the dielectric body situated over the III-nitride...

04/03/14 - 20140091363 - Normally-off high electron mobility transistor
According to example embodiments, a normally-off high electron mobility transistor (HEMT) includes: a channel layer having a first nitride semiconductor, a channel supply layer on the channel layer, a source electrode and a drain electrode at sides of the channel supply layer, a depletion-forming layer on the channel supply layer,...

04/03/14 - 20140091364 - Compound semiconductor device and method of manufacturing the same
An AlGaN/GaN HEMT includes: an electron transit layer; an electron supply layer formed above the electron transit layer; and a gate electrode formed above the electron supply layer, wherein a p-type semiconductor region is formed only at a site of the electron transit layer which is contained in a region...

04/03/14 - 20140091365 - Compound semiconductor device and method of manufacturing the same
A compound semiconductor device includes: a compound semiconductor layer; and a gate electrode formed above the compound semiconductor layer; and a source electrode and a drain electrode formed on both sides of the gate electrode, on the compound semiconductor layer, wherein the source electrode has a plurality of bottom surfaces...

03/27/14 - 20140084344 - Compound semiconductor device and method for manufacturing the same
A compound semiconductor device includes: an electron transit layer formed of a compound semiconductor; and an electrode formed so as to overlie the electron transit layer with an insulating film interposed between the electron transit layer and the electrode, wherein part of the electron transit layer below the electrode are...

03/27/14 - 20140084345 - Compound semiconductor device and method of manufacturing the same
A compound semiconductor device includes: a compound semiconductor stacked structure; a source electrode and a drain electrode formed separately from each other above the compound semiconductor stacked structure; a gate electrode formed between the source electrode and the drain electrode above the compound semiconductor stacked structure; and a passivation film...

03/27/14 - 20140084346 - Switching element
Provided is a switching element capable of effectively preventing a collapse phenomenon. A switching element (la) includes an electron running layer (12), an electron supplying layer (13) formed on an upper surface of the electron running layer (12), having a band gap larger than that of the electron running layer...

03/20/14 - 20140077266 - Heterostructure transistor with multiple gate dielectric layers
A heterostructure semiconductor device includes a first active layer and a second active layer disposed on the first active layer. A two-dimensional electron gas layer is formed between the first and second active layers. A first gate dielectric layer is disposed on the second active layer. A second gate dielectric...

03/20/14 - 20140077267 - High electron mobility transistor and method of manufacturing the same
According to example embodiments, a high electron mobility transistor (HEMT) includes a first semiconductor layer on a substrate and a second semiconductor layer on the first semiconductor layer. The first and second semiconductor layers define a recessed region. A semiconductor doped layer is in the recessed region of first and...

03/13/14 - 20140070278 - Active area shaping of iii-nitride devices utilizing multiple dielectric materials
In an exemplary implementation, a III-nitride semiconductor device includes a III-nitride heterojunction including a first III-nitride body situated over a second III-nitride body to form a two-dimensional electron gas. The III-nitride semiconductor device further includes a dielectric body situated over the III-nitride heterojunction and including a first dielectric layer of...

03/13/14 - 20140070279 - Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
In an exemplary implementation, a III-nitride semiconductor device includes a III-nitride heterojunction including a first III-nitride body situated over a second III-nitride body to form a two-dimensional electron gas. The III-nitride semiconductor device further includes a gate well formed in a dielectric body, the dielectric body situated over the III-nitride...

03/13/14 - 20140070280 - Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
In an exemplary implementation, a III-nitride semiconductor device includes a III-nitride heterojunction including a first III-nitride body situated over a second III-nitride body to form a two-dimensional electron gas. The III-nitride semiconductor device further includes a gate well formed in a dielectric body, the dielectric body situated over the III-nitride...