REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Heterojunction Device > Field Effect Transistor > Doping On Side Of Heterojunction With Lower Carrier Affinity (e.g., High Electron Mobility Transistor (hemt)) Doping On Side Of Heterojunction With Lower Carrier Affinity (e.g., High Electron Mobility Transistor (hemt))Doping On Side Of Heterojunction With Lower Carrier Affinity (e.g., High Electron Mobility Transistor (hemt)) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/31/08 - 20080023726 - Schottky gate metallization for semiconductor devices A method of forming a Schottky barrier contact to a semiconductor material, includes the following steps: depositing an iridium contact on a surface of the semiconductor material; and annealing the iridium contact to form a Schottky barrier contact to the semiconductor material. For an example of an iridium Schottky contact ... 01/03/08 - 20080001173 - Buried channel mosfet using iii-v compound semiconductors and high k gate dielectrics A semiconductor-containing heterostructure including, from bottom to top, a III-V compound semiconductor buffer layer, a III-V compound semiconductor channel layer, a III-V compound semiconductor barrier layer, and an optional, yet preferred, III-V compound semiconductor cap layer is provided. The barrier layer may be doped, or preferably undoped. The III-V compound ... 12/27/07 - 20070295993 - Low density drain hemts Methods and devices for fabricating AlGaN/GaN normally-off high electron mobility transistors (HEMTs). A fluorine-based (electronegative ions-based) plasma treatment or low-energy ion implantation is used to modify the drain-side surface field distribution without the use of a field plate electrode. The off-state breakdown voltage can be improved and current collapse can ... 12/13/07 - 20070284614 - Ohmic contacts for semiconductor devices A method for making a high electron mobility field-effect transistor device, including the following steps: providing a layered semiconductor structure that includes an InGaAs channel layer and at least two layers over the channel layer, the at least two layers including a layer of InAlAs, a portion of which has ... 11/22/07 - 20070267655 - Semiconductor device having mis structure and its manufacture method A channel layer (11) made of compound semiconductor and a barrier layer (12) made of compound semiconductor having a band gap wider than the channel layer are formed over a substrate. A gate insulating film (13) made of first insulating material is formed on the barrier layer over the channel ... 10/11/07 - 20070235761 - Wide bandgap transistor devices with field plates A transistor structure comprising an active semiconductor layer with metal source and drain contacts formed in electrical contact with the active layer. A gate contact is formed between the source and drain contacts for modulating electric fields within the active layer. A spacer layer is formed above the active layer ... 10/04/07 - 20070228418 - Aluminum alloys for low resistance, ohmic contacts to iii-nitride or compound semiconductor A low contact resistance ohmic contact for a III-Nitride or compound semiconductor wafer or die consists of 4 layers of Ti, AlSi, Ti and TiW. The AlSi has about 1% Si. The layers are sequentially deposited as by sputtering, are patterned and plasma etched and then annealed in a rapid ... 09/20/07 - 20070215905 - Compound semiconductor epitaxial substrate and process for producing the same Lm>Ls>Lc (2a) ... 08/23/07 - 20070194347 - Compound semiconductor device and method of fabricating the same In formation-by-growth of an AlGaN layer 3 as having a double-layered structure, a non-doped AlGaN layer (i-AlGaN layer) having an Al compositional ratio of approximately 15% is formed to a thickness of approximately 3 nm on an i-GaN layer, and further thereon, an AlGaN layer (n-AlGaN layer) doped with Si ... 07/19/07 - 20070164315 - Cap layers including aluminum nitride for nitride-based transistors and methods of fabricating same High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. High electron mobility transistors are provided that include ... 07/19/07 - 20070164314 - Nitrogen polar iii-nitride heterojunction jfet An N-polar III-nitride heterojunction JFET which includes a P-type III-nitride body under the gate electrode thereof. ... 06/21/07 - 20070138508 - Mobile-based delayed flip-flop circuit with nrz-mode output A monostable to bistable transition logic element (MOBILE)-based delayed flip-flop circuit with a non-return-to-zero (NRZ)-mode output is constructed by including a parallel connection structure of a resonant-tunneling-diode (RTD) and a HEMT (High-Electron-Mobility-Transistor) used as a data input terminal and a series connection structure of the RTD and the HEMT used ... 06/21/07 - 20070138507 - Method of fabricating reduced subthreshold leakage current submicron nfet's with high iii/v ratio material A method of fabricating an enhancement mode semiconductor device comprises providing a compound semiconductor substrate, epitaxially growing on the substrate a first portion of a buffer, the first portion including gallium arsenide (GaAs), growing a second portion of the buffer, the second portion including a high V/III ratio and high ... 06/14/07 - 20070131970 - Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of aigan/gan hemts This invention pertains to an electronic device and to a method for making it. The device is a heterojunction transistor, particularly a high electron mobility transistor, characterized by presence of a 2 DEG channel. Transistors of this invention contain an AlGaN barrier and a GaN buffer, with the channel disposed, ... 05/24/07 - 20070114569 - Robust transistors with fluorine treatment A semiconductor device, and particularly a high electron mobility transistor (HEMT), having a plurality of epitaxial layers and experiencing an operating (E) field. A negative ion region in the epitaxial layers to counter the operating (E) field. One method for fabricating a semiconductor device comprises providing a substrate and growing ... 05/10/07 - 20070102727 - Field-effect transistor A field-effect transistor in the present invention has a source, a first gate, a second gate and a drain, which are formed in this order at positions away from each other on a semiconductor layer along the surface of the semiconductor layer and each of which has a metal electrode. ... 05/10/07 - 20070102726 - Semiconductor device for improving channel mobility A semiconductor device includes a substrate, a gate electrode formed on the substrate, a source region and a drain region formed in the substrate, the source region and the drain region formed located on the both side of the gate electrode, a first insulating film formed on the substrate, the ... 04/12/07 - 20070080371 - Display device A display device which may include a first substrate and a second substrate facing each other to form a plurality of cells between the first and second substrates, a plurality of first electrodes and a plurality of second electrodes disposed between the first substrate and the second substrate, electron accelerating ... 03/08/07 - 20070051979 - Semiconductor device A semiconductor device includes a plurality of electrodes arranged on a compound semiconductor layer grown on a substrate, and a surface protection film that protects a surface of a semiconductor layer on the compound semiconductor layer between the electrodes. A refractive index of the surface protection film is controlled so ... 03/08/07 - 20070051978 - Ohmic electrode, method of manufacturing ohmic electrode, field effect transistor, method of manufacturing field effect transistor, and semiconductor device The contact resistance between an Ohmic electrode and an electron transit layer is reduced compared with a case in which the Ohmic electrode is provided to a depth less than the heterointerface. As a result, for an Ohmic electrode provided in a structure comprising an electron transit layer formed of ... 03/01/07 - 20070045663 - Field effect transistor A field effect transistor according to an embodiment of the invention includes: a semiconductor substrate; a channel layer of a first conductivity type formed on the semiconductor substrate; and a semiconductor layer of a second conductivity type that is buried in a recess structure formed in a semiconductor layer on ... 01/18/07 - 20070012950 - Production of electronic devices A method of producing a metal element of an electronic device on a substrate, including the steps of: forming a mixture of a material comprising metal atoms with a liquid, depositing the material from the liquid mixture onto a substrate, and then irradiating at least part of the deposited material ... 12/14/06 - 20060278892 - Gallium nitride based high-electron mobility devices A heterojunction device includes a first layer of p-type aluminum gallium nitride; a second layer of undoped gallium nitride on the first layer; a third layer of aluminum gallium nitride on the second layer; and an electron gas between the second and third layers. A heterojunction between the first and ... 11/23/06 - 20060261371 - Semiconductor device and manufacturing method thereof An object of the present invention is to provide a semiconductor device and a manufacturing method thereof which can realize a normally-off field-effect transistor made of a III group nitride semiconductor. The present invention includes: placing a sapphire substrate in a crystal growth chamber; forming a low-temperature GaN buffer layer ... 11/23/06 - 20060261370 - Gallium nitride high electron mobility transistor structure A semiconductor structure, comprising: a substrate; a first aluminum nitride (AlN) layer having an aluminum/reactive nitride (Al/N) flux ratio less than 1 disposed on the substrate; and a second AlN layer having an Al/reactive N flux ratio greater than 1 disposed on the first AlN layer. The substrate is a ... 11/16/06 - 20060255366 - Nitride-based transistors with a protective layer and a low-damage recess Transistors are fabricated by forming a nitride-based semiconductor barrier layer on a nitride-based semiconductor channel layer and forming a protective layer on a gate region of the nitride-based semiconductor barrier layer. Patterned ohmic contact metal regions are formed on the barrier layer and annealed to provide first and second ohmic ... 11/02/06 - 20060244011 - Binary group iii-nitride based high electron mobility transistors and methods of fabricating same Binary Group III-nitride high electron mobility transistors (HEMTs) and methods of fabricating binary Group III-nitride HEMTs are provided. In some embodiments, the binary Group III-nitride HEMTs include a first binary Group III-nitride barrier layer, a binary Group III-nitride channel layer on the first barrier layer; and a second binary Group ... 11/02/06 - 20060244010 - Aluminum free group iii-nitride based high electron mobility transistors and methods of fabricating same Aluminum free high electron mobility transistors (HEMTs) and methods of fabricating aluminum free HEMTs are provided. In some embodiments, the aluminum free HEMTs include an aluminum free Group III-nitride barrier layer, an aluminum free Group III-nitride channel layer on the barrier layer and an aluminum free Group III-nitride cap layer ... 11/02/06 - 20060244009 - High electron mobility transistor (hemt) structure with refractory gate metal An InP high electron mobility transistor (HEMT) structure in which a gate metal stack includes an additional thin layer of a refractory metal, such as molybdenum (Mo) or platinum (Pt) at a junction between the gate metal stack and a Schottky barrier layer in the HEMT structure. The refractory metal ... 10/05/06 - 20060220063 - Semiconductor device having gan-based semiconductor layer A semiconductor device includes a GaN-based semiconductor layer formed on a substrate, and an insulating film composed of any one of silicon nitride in which the composition ratio of silicon to nitrogen is 0.85 to 3.0, silicon oxide in which the composition ratio of silicon to oxygen is 0.6 to ... 10/05/06 - 20060220062 - Phemt with barrier optimized for low temperature operation In one embodiment, a semiconductor device (500) includes a buffer layer (504) formed over a substrate (502). An AlxGa1-xAs layer (506) is formed over the buffer layer (504) and has a first doped region (508) formed therein. An InxGa1-xAs channel layer (512) is formed over the AlxGa1-xAs layer (506). An ... 09/28/06 - 20060214188 - Semiconductor device having gan-based semiconductor layer A semiconductor device includes, an AlGaN electron supply layer having a [000-1] crystalline orientation in a thickness direction to a substrate plane, a GaN electron traveling layer formed on the AlGaN electron supply layer, a gate electrode formed above the GaN electron traveling layer, and a source electrode and a ... 09/28/06 - 20060214187 - Wafer for semiconductor device fabrication, method of manufacture of same, and field effect transistor A wafer for semiconductor device fabrication, from which large output power can be obtained by making the off-state breakdown voltage higher than in the prior art. The wafer for semiconductor device fabrication comprises a substrate, GaN electron transit layer formed on the side of the principal surface of the substrate, ... 09/21/06 - 20060208280 - Group iii nitride field effect transistors (fets) capable of withstanding high temperature reverse bias test conditions Group III Nitride based field effect transistor (FETS) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about 56 volts, a gate to source voltage (Vgs) of from about −8 to about −14 volts and a temperature of about ... 09/21/06 - 20060208279 - Multi-layer structure for use in the fabrication of integrated circuit devices and methods for fabrication of same A multi-layer structure for use in the fabrication of integrated circuit devices is adapted for the formation of enhancement mode high electron mobility transistors, depletion mode high electron mobility transistors, and power high electron mobility transistors. The structure has, on a substrate, a channel layer, spacer layer on the channel ... 09/07/06 - 20060197107 - Semiconductor device and production method thereof A semiconductor device formed from a III-V nitride family semiconductor is disclosed that has a reduced gate leakage current and good interface characteristics between the III-V nitride family semiconductor and a gate insulating film. The semiconductor device includes a semiconductor layer formed from the III-V nitride family semiconductor, a gate ... 07/20/06 - 20060157735 - Compound semiconductor device At a gate electrode formed on a compound semiconductor layer with a Schottky junction, a diffusion preventing layer made of TixW1−xN (0<x<1) for suppressing the metal of a low-resistance metal layer from diffusing to the compound semiconductor layer is provided between a Ni layer forming a Schottky barrier with the ... 07/06/06 - 20060145191 - Semiconductor device and method of manufacturing such a device The invention relates to a so-termed punchthrough diode (10) with a stack of, for example, n++, n−, p+, n++ regions (1,2,3,4). In the known diode, these semiconductor regions (1,2,3,4) are positioned in said order on a substrate (11). The diode is provided with connection conductors (5,6). Such a diode does ... 06/29/06 - 20060138457 - Nitride-based semiconductor device of reduced current leakage A high electron mobility transistor is disclosed which has a double-layered main semiconductor region formed on a silicon substrate via a multilayered buffer region. The multilayered buffer region is in the form of alternations of an aluminum nitride layer and a gallium nitride layer. The main semiconductor region, buffer region, ... 06/29/06 - 20060138456 - Insulating gate algan/gan hemt AlGaN/GaN HEMTs are disclosed having a thin AlGaN layer to reduce trapping and also having additional layers to reduce gate leakage and increase the maximum drive current. One HEMT according to the present invention comprises a high resistivity semiconductor layer with a barrier semiconductor layer on it. The barrier layer ... 06/29/06 - 20060138455 - Silicon carbide on diamond substrates and related devices and methods A high power, wide-bandgap device is disclosed that exhibits reduced junction temperature and higher power density during operation and improved reliability at a rated power density. The device includes a diamond substrate for providing a heat sink with a thermal conductivity greater than silicon carbide, a single crystal silicon carbide ... 06/15/06 - 20060124963 - Transistor of semiconductor device and method of fabricating the same Provided are a transistor of a semiconductor device and a method of fabricating the same. The transistor of a semiconductor device includes an epitaxial substrate having a buffer layer, a first silicon (Si) planar doped layer, a first conductive layer, a second Si planar doped layer having a different dopant ... 06/08/06 - 20060118824 - Semiconductor device with reduced leakage current, and method of fabrication A high electron mobility transistor is disclosed which has a triple-layered main semiconductor region formed on a silicon substrate via a multilayered buffer region. The multilayered buffer region is in the form of alternations of an aluminum nitride layer and a gallium nitride layer. Whilst the aluminum nitride layers are ... 06/08/06 - 20060118823 - Field effect transistors (fets) having multi-watt output power at millimeter-wave frequencies High electron mobility transistors (HEMT) are provided having an output power of greater than 3.0 Watts when operated at a frequency of at least 30 GHz. The HEMT has a power added efficiency (PAE) of at least about 20 percent and/or a gain of at least about 7.5 dB. The ... 05/25/06 - 20060108603 - Group iii nitride compound semiconductor light emitting device In a group III nitride compound semiconductor light emitting device comprising an n-type semiconductor layer, a p-type semiconductor layer having a superlattice structure in which a first layer comprising at least Al and a second layer having a different composition from that of the first layer are laminated repetitively, and ... 05/18/06 - 20060102932 - Field effect transistor A semiconductor structure a structure with an enhancement mode transistor device disposed in a first region and depletion mode transistor device disposed in a laterally displaced second region. The structure has a channel layer for the depletion mode and enhancement mode transistor devices. An enhancement mode transistor device InGaP etch ... 04/20/06 - 20060081877 - Semiconductor epitaxial wafer and field effect rtansistor A semiconductor epitaxial wafer has, on a sapphire substrate, an AlN buffer layer formed of undoped AlN, a GaN buffer layer formed of 2 μm-thick undoped GaN, and measurement electrodes formed thereon. ... 04/13/06 - 20060076577 - High electron mobility transistors with sb-based channels This invention pertains to an electronic device containing a semi-insulating substrate, a buffer layer of an antimony-based material disposed on said substrate, a channel layer of InAsySb1−y material disposed on said buffer layer, a barrier layer of an antimony-based disposed on said channel layer, and a cap layer of InAsySb1−y ... 03/30/06 - 20060065912 - Non-planar iii-nitride power device having a lateral conduction path A III-nitride power semiconductor device that includes a heterojunction body with a stepped profile. ... 03/16/06 - 20060054927 - Sensor using a gan transistor The present invention uses a GaN transistor grown over a Si substrate, which is obtained by etching through lithography or a plasma etching; and is used as a pressure sensor with great sensitivity by utilizing the characteristic of piezoelectric effect of GaN with the ability of magnifying signals and providing ... 03/16/06 - 20060054926 - High electron mobility transistor piezoelectric structures Piezoelectric semiconductor structures and methods for fabricating the same are described. In an embodiment, the piezoelectric semiconductor structure includes a support substrate, a channel layer arranged on one side of the support substrate, and a barrier layer formed on the channel layer. The barrier layer is made of alternating binary ... 03/09/06 - 20060049427 - Field effect type semiconductor device A field effect type semiconductor device is disclosed wherein a channel is easily depleted just under a gate electrode to implement an E-mode, but a channel is hard to be depleted just under a gate recess region so that the transconductance gm and the cutoff frequency fT can be set ... 03/09/06 - 20060049426 - Nitride based hetero-junction field effect transistor A nitride based hetero-junction field effect transistor comprises a high resistance nitride semiconductor layer formed on a substrate, an Al-doped GaN layer formed on the high resistance nitride semiconductor layer and having an Al content of 0.1˜1%, an undoped GaN layer formed on the Al-doped GaN layer, and an AlGaN ... 01/26/06 - 20060017064 - Nitride-based transistors having laterally grown active region and methods of fabricating same High electron mobility transistors and/or methods of fabricating high electron mobility transistors that include a first Group III-nitride layer having vertically grown regions, laterally grown regions and a coalescence region are provided. A Group III-nitride channel layer is provided on the first Group III-nitride layer and a Group III-nitride barrier ... 01/12/06 - 20060006415 - Wide bandgap hemts with source connected field plates A HEMT comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the plurality of active layers. A spacer layer is formed on at least a portion of a surface of said plurality of active layers and ... 12/29/05 - 20050285144 - Field effect transistor, compound semiconductor substrate and process for forming a recess therein A III-V field effect transistor comprising a semiconductor channel layer having an electrically conducting channel; an ohmic contact layer on the semiconductor channel layer, the ohmic contact layer having a recess structure disposed therethrough to the semiconductor channel layer; the bottom of the ohmic contact layer comprising an etch stop ... 12/01/05 - 20050263791 - Semiconductor device and a method of making the same A semiconductor device having nitride semiconductor layers has a buffer layer (2) in the form of alternations of a first sublayer (8) of AlN and a second layer (9) of GaN with interposition of a third layer (10) of p-type GaN therebetween. On this buffer layer there is grown a ... 12/01/05 - 20050263790 - Gan-based sensor nodes for in situ detection of gases A system for detecting chemical/biological substances and a detection method. The system comprises a plurality of sensing units or nodes and a radiofrequency link. Each unit has several sensors with different sensing curves. Each sensor is able to transmit information related to the sensed substance on a specific frequency. The ... 12/01/05 - 20050263789 - Field effect transistor A semiconductor structure a structure with an enhancement mode transistor device disposed in a first region and depletion mode transistor device disposed in a laterally displaced second region. The structure has a channel layer for the depletion mode and enhancement mode transistor devices. An enhancement mode transistor device InGaP etch ... 09/08/05 - 20050194613 - Field effect transistor In a field effect transistor having a quantum well is provided by a primary conduction channel, at least one secondary conduction channel immediately adjacent and in contact with the primary channel has an effect bandgap greater than the effective bandgap of the primary channel, and the modulus of the difference ... 08/11/05 - 20050173729 - Fabrication method for a semiconductor structure and corresponding semiconductor structure provision of a semiconductor substrate (1) with a gate dielectric (5); provision of a plurality of multilayered, elongate gate stacks (GS1; GS2) which essentially run parallel to one another on the gate dielectric (5), which gate stacks have a bottommost layer (10) made of silicon; provision of a first liner ... 08/04/05 - 20050167698 - Semiconductor device A semiconductor device includes a semiconductor substrate, a channel layer, a Schottky layer, a first layer having a narrower band gap than the Schottky layer, a second layer having band discontinuity with the Schottky layer, a gate electrode, an n+ layer, a source electrode, and a drain electrode. The first ... 08/04/05 - 20050167697 - High voltage switching devices and process for forming same The present invention relates to various switching device structures including Schottky diode (10), P-N diode, and P-I-N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (>2.5 um) GaN layers (16) of low dopant concentration (<1E16 cm−3) grown on a conductive GaN ... 07/28/05 - 20050161705 - Semiconductor device and method of fabricating semiconductor device To provide a semiconductor device which makes it possible to avoid deterioration in the step coverage property at a gate electrode provided on an operating region and decrease a leakage current between the operating region and the gate electrode. The semiconductor device arranged as a HEMT is made to include ... 07/07/05 - 20050145883 - Iii-nitride semiconductor device with trench structure A III-nitride trench device has a vertical conduction region with an interrupted conduction channel when the device is not on, providing an enhancement mode device. The trench structure may be used in a vertical conduction or horizontal conduction device. A gate dielectric provides improved performance for the device by being ... 06/16/05 - 20050127400 - Heterostructure resistor and method of forming the same A heterostructure resistor comprises a doped region formed in a portion of a semiconductor substrate, the substrate comprising a first semiconductor material having a first natural lattice constant. The doped region comprises a semiconductor layer overlying the semiconductor substrate. The semiconductor layer comprises a second semiconductor material with a second ... 06/16/05 - 20050127399 - Non-uniform gate pitch semiconductor devices Semiconductor devices having a plurality of unit cells connected in parallel are provided. The unit cells each have a gate finger with a gate pitch between adjacent ones of the gate fingers. The gate pitch is non-uniform in a predetermined pattern. ... 06/02/05 - 20050116253 - Semiconductor device The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode 17 is formed in an active region defined by an element separation portion 9 on a main surface of a substrate 1 comprising GaAs. The gate electrode 17 is ... 06/02/05 - 20050116252 - Semiconductor device and method of fabricating semiconductor device To provide a semiconductor device which makes it possible to avoid deterioration in the step coverage property at a gate electrode provided on an operating region and decrease a leakage current between the operating region and the gate electrode. The semiconductor device arranged as a HEMT is made to include ... ### FreshPatents.com Support |