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Doping On Side Of Heterojunction With Lower Carrier Affinity (e.g., High Electron Mobility Transistor (hemt))

Doping On Side Of Heterojunction With Lower Carrier Affinity (e.g., High Electron Mobility Transistor (hemt)) patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes)


Heterojunction Device > Field Effect Transistor > Doping On Side Of Heterojunction With Lower Carrier Affinity (e.g., High Electron Mobility Transistor (hemt))



Semiconductor device and method of manufacturing a semiconductor device
05/21/15 - 20150137184 - A method of manufacturing a semiconductor device includes laminating and forming an electron transit layer, an electron supplying layer, an etching stop layer, and a p-type film on a substrate sequentially, the p-type film being formed of a nitride semiconductor material that includes Al doped with an impurity element that...

Refractory metal barrier in semiconductor devices
05/07/15 - 20150123169 - Gate metallization structures and methods for semiconductor devices are disclosed, wherein a refractory metal barrier is implemented to provide performance improvements. Transistor devices are disclosed having a compound semiconductor substrate and an electron-beam evaporated gate structure including a layer of tantalum nitride (TaNx), a layer of titanium (Ti) and a...

Hemt-compatible lateral rectifier structure
05/07/15 - 20150123170 - The present disclosure relates to a high electron mobility transistor compatible power lateral field-effect rectifier (L-FER) device. In some embodiments, the rectifier device has an electron supply layer located over a layer of semiconductor material at a position between an anode terminal and a cathode terminal. A layer of doped...

Conductivity improvements for iii-v semiconductor devices
05/07/15 - 20150123171 - Conductivity improvements in III-V semiconductor devices are described. A first improvement includes a barrier layer that is not coextensively planar with a channel layer. A second improvement includes an anneal of a metal/Si, Ge or SiliconGermanium/III-V stack to form a metal-Silicon, metal-Germanium or metal-SiliconGermanium layer over a Si and/or Germanium...

Switching circuit
04/30/15 - 20150115324 - In an embodiment, a switching circuit includes input drain, source and gate nodes, a high voltage depletion mode transistor including a current path coupled in series with a current path of a low voltage enhancement mode transistor, and an overheating detection circuit for detecting overheating of the switching circuit....

Spacer supported lateral channel fet
04/30/15 - 20150115325 - A semiconductor device includes a semiconductor material and trenches extending into the semiconductor material from a first main surface of the semiconductor material to form mesas of semiconductor material between the trenches. The device also includes a field plate in the trenches, a body region in the mesas, a source...

Electronic device
04/30/15 - 20150115326 - In an embodiment, an electronic device includes a semiconductor layer having a surface, a gate and a first current electrode on the surface and a dielectric layer extending between the gate and the first current electrode and including charged ions having a predetermined charge profile....

Group iii-v device including a buffer termination body
04/30/15 - 20150115327 - There are disclosed herein various implementations of a III-Nitride device and method for its fabrication. The III-Nitride device includes a III-Nitride buffer layer situated over a substrate, the III-Nitride buffer layer having a first bandgap. In addition, the device includes a III-Nitride heterostructure situated over the III-Nitride buffer layer and...

Method of forming a semiconductor structure
04/30/15 - 20150115328 - A semiconductor structure comprises a first layer. The first layer comprises a first III-V semiconductor material. The semiconductor structure also comprises a second layer over the first layer. The second layer comprises a second III-V semiconductor material different from the first III-V semiconductor material. The semiconductor structure further comprises an...

High electron mobility transistor
04/23/15 - 20150108547 - According to example embodiments, a high electron mobility transistor (HEMT) includes a channel layer having a 2-dimensional electron gas (2DEG), a channel supply layer on the channel layer, a source electrode and a drain electrode spaced apart from each other on one of the channel layer and the channel supply...

High electron mobility transistors with minimized performance effects of microcracks in the channel layers
04/16/15 - 20150102387 - In HEMTs based on III-nitrides epitaxial films or GaAs, AlGaAs and InGaAs epitaxial films, unwanted microcracks are often formed in the composite epitaxial layers in the channel region during fabrication and operation. These microcracks are caused by strain or stresses due to lattice mismatch and thermal expansion coefficient differences between...

Semiconductor device with multiple space-charge control electrodes
04/16/15 - 20150102388 - A circuit including a semiconductor device having a set of space-charge control electrodes is provided. The set of space-charge control electrodes is located between a first terminal, such as a gate or a cathode, and a second terminal, such as a drain or an anode, of the device. The circuit...

Semiconductor device having high mobility channel
04/02/15 - 20150091060 - In a particular embodiment, a semiconductor device includes a high mobility channel between a source region and a drain region. The high mobility channel extends substantially a length of a gate. The semiconductor device also includes a doped region extending from the source region or the drain region toward the...

Passivation technique for wide bandgap semiconductor devices
04/02/15 - 20150091061 - A method of protecting a semiconductor structure from water and a semiconductor structure formed by the method. The semiconductor structure includes a wide-bandgap semiconductor material in which at least one semiconductor device is formed. The method includes heating the semiconductor structure in a vacuum to a temperature of at least...

Semiconductor element, semiconductor device, method for manufacturing semiconductor element, and method for manufacturing semiconductor device
04/02/15 - 20150091062 - According to one embodiment, a semiconductor element includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a control electrode, a pad unit, an insulating layer, and a conductor. The second semiconductor layer is provided on the first semiconductor layer. The first electrode is provided...

Nitride semiconductor device
03/19/15 - 20150076562 - A nitride semiconductor device is provide that can reduce contact resistance of an ohmic electrode and a nitride semiconductor layer. In a GaN HFET, recesses (106, 109) are formed in a nitride semiconductor multilayer body (20) composed of an undoped GaN layer (1) and an undoped AlGaN layer (2) formed...

Method of making a circuit structure having islands between source and drain and circuit formed
03/19/15 - 20150076563 - A method of making a circuit structure includes growing a bulk layer over a substrate, and growing a donor-supply layer over the bulk layer. The method further includes depositing a doped layer over the donor-supply layer, and patterning the doped layer to form a plurality of islands. The method further...

Semiconductor device
03/12/15 - 20150069468 - In one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type or an intrinsic type. The device further includes a second semiconductor layer of the first conductivity type or the intrinsic type disposed above the first semiconductor layer. The device further includes a third semiconductor...

Semiconductor device
03/12/15 - 20150069469 - According to one embodiment, a semiconductor device includes a nitride semiconductor layer, a first electrode provided on the layer, a second electrode provided on the layer, a insulating film provided on the layer, a first control electrode provided on the film, and a conductor provided on the film. The first...

Compound semiconductor device and method of manufacturing the same
03/05/15 - 20150060946 - A compound semiconductor device includes a channel layer of first arsenide semiconductor, an electron supply layer of second arsenide semiconductor over the channel layer, a gate electrode, a source electrode and a drain electrode over the channel layer, and a metal film between the gate electrode and the drain electrode,...

Transistor with diamond gate
03/05/15 - 20150060947 - A field effect transistor having a diamond gate electrode and a process for forming the same. In some embodiments, the device is an AlGaN/GaN high-electron-mobility transistor (HEMT). The diamond gate electrode is formed so that it directly contacts the barrier layer. In some embodiments, the diamond gate electrode is formed...

Semiconductor device
03/05/15 - 20150060948 - A field plate causes excessive gate capacitance that interferes with high-speed transistor switching. To suppress the excessive gate capacitance, an aperture includes a first side wall positioned on the side of a drain electrode, and a second side wall positioned on the side of a source electrode. A gate electrode...

Fet dielectric reliability enhancement
03/05/15 - 20150060949 - A semiconductor device may be formed by forming a silicon-containing gate dielectric layer over a semiconductor layer. A gate metal layer is formed over the gate dielectric layer; the gate metal layer includes 2 atomic percent to 10 atomic percent silicon during formation. The gate metal layer is patterned to...

High electron mobility transistor
02/26/15 - 20150054034 - A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region, and a plurality of first bridges electrically connecting the plurality of second electrodes....

High electron mobility transistor and method of manufacturing the same
02/26/15 - 20150054035 - According to example embodiments, a high electron mobility transistor (HEMT) includes a first semiconductor layer on a substrate and a second semiconductor layer on the first semiconductor layer. The first and second semiconductor layers define a recessed region. A semiconductor doped layer is in the recessed region of first and...

Integrated circuit with first and second switching devices, half bridge circuit and method of manufacturing
02/19/15 - 20150048420 - An integrated circuit includes a first switching device including a first semiconductor region in a first section of a semiconductor portion and a second switching device including a second semiconductor region in a second section of the semiconductor portion. The first and second sections as well as electrode structures of...

High electron mobility transistors, methods of manufacturing the same, and electronic devices including the same
02/19/15 - 20150048421 - Provided are high electron mobility transistors (HEMTs), methods of manufacturing the HEMTs, and electronic devices including the HEMTs. An HEMT may include an impurity containing layer, a partial region of which is selectively activated. The activated region of the impurity containing layer may be used as a depletion forming element....

Redistribution board, electronic component and module
02/12/15 - 20150041859 - A redistribution board includes a first conductive layer including a redistribution structure for low voltage signals, a second conductive layer including a redistribution structure for high voltage signals, and a non-conductive layer. The second conductive layer is spaced apart from the first conductive layer by the non-conductive layer. The redistribution...

Semiconductor device and manufacturing method thereof
02/12/15 - 20150041860 - A semiconductor device includes an electron transit layer configured to be formed on a substrate; an electron supply layer configured to be formed on the electron transit layer; an upper surface layer configured to be formed on the electron supply layer; a gate electrode configured to be formed on the...

Iii-n device structures and methods
02/12/15 - 20150041861 - A III-N device is described with a III-N layer, an electrode thereon, a passivation layer adjacent the III-N layer and electrode, a thick insulating layer adjacent the passivation layer and electrode, a high thermal conductivity carrier capable of transferring substantial heat away from the III-N device, and a bonding layer...

Semiconductor apparatus and manufacturing method of the semiconductor apparatus
02/05/15 - 20150035010 - Provided is a semiconductor apparatus including a channel layer, an upper barrier layer that is provided on the channel layer, a first barrier layer that constitutes a boundary layer on a side of the channel layer in the upper barrier layer, a second barrier layer that is provided in a...

Gan device with reduced output capacitance and process for making same
01/29/15 - 20150028390 - A GaN transistor with reduced output capacitance and a method form manufacturing the same. The GaN transistor device includes a substrate layer, one or more buffer layer disposed on a substrate layer, a barrier layer disposed on the buffer layers, and a two dimensional electron gas (2DEG) formed at an...

Transistor having back-barrier layer and method of making the same
01/22/15 - 20150021665 - A transistor includes a substrate, a channel layer over the substrate, a back-barrier layer over the channel layer, and an active layer over the back-barrier layer. The back-barrier layer has a band gap discontinuity with the channel layer. The band gap of the active layer is less than the band...

Transistor having partially or wholly replaced substrate and method of making the same
01/22/15 - 20150021666 - A transistor includes a substrate, a channel layer over the substrate, an active structure over the channel layer, a gate electrode over the channel layer, and a drain electrode over the channel layer. The active structure is configured to cause a two dimensional electron gas (2DEG) to be formed in...

High electron mobility transistor and method of forming the same
01/22/15 - 20150021667 - A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A carrier channel is located between the first III-V compound layer and the second III-V compound layer....

High electron mobility transistors and methods of fabricating the same
01/08/15 - 20150008485 - A High electron mobility transistor (HEMT) includes a source electrode, a gate electrode, a drain electrode, a channel forming layer in which a two-dimensional electron gas (2DEG) channel is induced, and a channel supplying layer for inducing the 2DEG channel in the channel forming layer. The source electrode and the...

Nitride semiconductor device
01/01/15 - 20150001586 - A nitride semiconductor device includes a substrate, a nitride semiconductor laminate, and an ohmic electrode of TiAl-based material. The nitride semiconductor laminate has a first nitride semiconductor layer on the substrate, and a second nitride semiconductor layer forming a heterointerface with the first nitride semiconductor layer. The nitride semiconductor device...

Normally-off-type heterojunction field-effect transistor
12/18/14 - 20140367742 - A normally-off-type HFET includes: an undoped AlwGa1-wN layer of t1 thickness, an undoped AlxGa1-xN layer of t2 thickness and an undoped GaN channel layer of tch thickness that are sequentially stacked; a source electrode and a drain electrode separated from each other and electrically connected to the channel layer; an...

Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor
12/18/14 - 20140367743 - In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a...

Cascode structures for gan hemts
12/11/14 - 20140361341 - A multi-stage transistor device is described. One embodiment of such a device is a dual-gate transistor, where the second stage gate is separated from a barrier layer by a thin spacer layer and is grounded through a connection to the source. In one embodiment the thin spacer layer and the...

Recessed field plate transistor structures
12/11/14 - 20140361342 - A transistor device including a field plate is described. One embodiment of such a device includes a field plate separated from a semiconductor layer by a thin spacer layer. In one embodiment, the thickness of spacer layer separating the field plate from the semiconductor layers is less than the thickness...

Cascode structures with gan cap layers
12/11/14 - 20140361343 - A transistor device including a cap layer is described. One embodiment of such a device includes cap layer between a gate and a semiconductor layer. In one embodiment, the thickness of the cap layer is between 5 nm and 100 nm. In another embodiment, the cap layer can be doped,...

High electron mobility bipolar transistor
12/11/14 - 20140361344 - The lattice during the process of epitaxy growth is stabilized and it is possible to prevent the dopants, the elements, the vacancies or the defects from diffusing into the neighboring layers, thereby improving the problem of mobility degradation and resistance increase, and sustaining the stability of the manufacturing process....

Graphene capped hemt device
12/04/14 - 20140353722 - A graphene capped HEMT device and a method of fabricating same are disclosed. The graphene capped HEMT device includes one or more graphene caps that enhance device performance and/or reliability of an exemplary AlGaN/GaN heterostructure transistor used in high-frequency, high-energy applications, e.g., wireless telecommunications. The HEMT device disclosed makes use...

High voltage durability iii-nitride device
12/04/14 - 20140353723 - A high voltage durability III-nitride semiconductor device comprises a support substrate including a first silicon body, an insulator body over the first silicon body, and a second silicon body over the insulator body. The high voltage durability III-nitride semiconductor device further comprises a III-nitride semiconductor body characterized by a majority...

Contact metallurgy for self-aligned high electron mobility transistor
11/27/14 - 20140346566 - A metallization scheme employing a first refractory metal barrier layer, a Group IIIA element layer, a second refractory metal barrier layer, and an oxidation-resistant metallic layer is employed to form a source region and a drain region that provide electrical contacts to a compound semiconductor material layer. The first and...

Elemental semiconductor material contactfor high electron mobility transistor
11/27/14 - 20140346567 - Portions of a top compound semiconductor layer are recessed employing a gate electrode as an etch mask to form a source trench and a drain trench. A low temperature epitaxy process is employed to deposit a semiconductor material including at least one elemental semiconductor material in the source trench and...

Low temperature ohmic contacts for iii-n power devices
11/27/14 - 20140346568 - The disclosure relates to a method for manufacturing an Au-free ohmic contact for an III-nitride (III-N) device on a semiconductor substrate and to a III-N device obtainable therefrom. The III-N device includes a buffer layer, a channel layer, a barrier layer, and a passivation layer. A 2DEG layer is formed...

Group iii-v device with a selectively reduced impurity concentration
11/20/14 - 20140339605 - There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body over the substrate, and a group III-V intermediate body having a bottom surface over the transition body. The semiconductor structure also includes a group III-V device layer over a...

Method and apparatus for reduced parasitics and improved multi-finger transistor thermal impedance
11/13/14 - 20140332853 - A transistor, a method and an apparatus for forming multiple connections to a transistor for reduced gate (FET/HEMT) or base (BJT/HBT) parasitics, and improved multi-finger transistor thermal impedance. Providing for a method and an apparatus that reduces a transistor's parasitics and reduces a transistor's thermal impedance, resulting in higher device...

Fet dielectric reliability enhancement
11/06/14 - 20140327047 - A semiconductor device may be formed by forming a silicon-containing gate dielectric layer over a semiconductor layer. A gate metal layer is formed over the gate dielectric layer; the gate metal layer includes 2 atomic percent to 10 atomic percent silicon during formation. The gate metal layer is patterned to...

Field-effect transistor
10/30/14 - 20140319582 - A field-effect transistor includes a channel layer in which a two-dimensional electron gas is formed, an electron supply layer located on the channel layer, a source electrode located on the electron supply layer, a drain electrode located on the electron supply layer, a gate electrode located on the electron supply...

High electron mobility transistor and method of forming the same
10/30/14 - 20140319583 - A High Electron Mobility Transistor (HEMT) includes a first III-V compound layer having a first band gap, and a second III-V compound layer having a second band gap over the first III-V compound layer. The second band gap is greater than the first band gap. A crystalline interfacial layer is...

Group iii nitride high electron mobility transistor (hemt) device
10/30/14 - 20140319584 - A group III nitride high electron mobility transistor (HEMT) device comprises a source electrode (112), a drain electrode (111), a main gate (116), a top gate (118), an insulating dielectric layer (117) and a heterostructure, wherein the source electrode (112) and the drain electrode (111) are electrically connected via two-dimensional...

Power device chip and method of manufacturing the power device chip
10/02/14 - 20140291728 - According to example embodiments, a power device chip includes a plurality of unit power devices classified into a plurality of sectors, a first pad and a second pad. At least one of the first and second pads is divided into a number of pad parts equal to a number of...

Method of forming a gate contact
09/18/14 - 20140264448 - A method is provided for forming a gate contact for a compound semiconductor device. The gate contact is formed from a gate contact portion and a top or wing contact portion. The method allows for the tunablity of the size of the wing contact portion, while retaining the size of...

Method of forming hemt semiconductor devices and structure therefor
09/18/14 - 20140264449 - In one embodiment, a HEMT semiconductor device includes an isolation region that may include oxygen wherein the isolation region may extend thorough an ALGaN and GaN layer into an underlying layer....

Semiconductor device and manufcturing method thereof
09/18/14 - 20140264450 - A semiconductor device including a substrate, a heterojunction body, a passivation layer, a source contact, a drain contact, and a gate contact. The heterojunction body disposed on or above the substrate includes a first semiconductor layer, a mask layer, a regrowth layer, and a second semiconductor layer. The first semiconductor...

Semiconductor device and method for producing the same, power supply device, and high-frequency amplifier
09/18/14 - 20140264451 - A semiconductor device includes: a nitride semiconductor multilayer; an insulating film disposed on the nitride semiconductor multilayer; and a gate electrode disposed on the insulating film, wherein the nitride semiconductor multilayer has a first oxidized region near an interface with a region of the insulating film below the gate electrode,...

Method of forming a hemt semiconductor device and structure therefor
09/18/14 - 20140264452 - In one embodiment, a method of forming a HEMT device may include plating a conductor or a plurality of conductors onto an insulator that overlies a plurality of current carrying electrodes of the HEMT device. The method may also include attaching a connector onto the conductor or attaching a plurality...

Method of forming a high electron mobility semiconductor device and structure therefor
09/18/14 - 20140264453 - In one embodiment, a method of forming a semiconductor device can comprise; forming a HEM device on a semiconductor substrate. The semiconductor substrate provides a current carrying electrode for the semiconductor device and one or more internal conductor structures provide a vertical current path between the semiconductor substrate and regions...

Ohmic contact structure for semiconductor device and method
09/18/14 - 20140264454 - In one embodiment, a high electron mobility device structure includes heterostructure with a Group III-nitride channel layer and a Group III-nitride barrier layer that forms a two-dimensional electron gas layer at an interface between the two layers. At least one current carrying electrode includes a recess-structured conductive contact adjoining and...

Carbon doping semiconductor devices
09/18/14 - 20140264455 - A method of fabricating a semiconductor device can include forming a III-N semiconductor layer in a reactor and injecting a hydrocarbon precursor into the reactor, thereby carbon doping the III-N semiconductor layer and causing the III-N semiconductor layer to be insulating or semi-insulating. A semiconductor device can include a substrate...

Method of forming a high electron mobility semiconductor device
09/18/14 - 20140264456 - In an embodiment, a semiconductor device is formed by a method that includes, providing a base substrate of a first semiconductor material, and forming a layer that is one of SiC or a III-V series material on the base substrate. In a different embodiment, the base substrate may be one...

High mobility, thin film transistors using semiconductor/insulator transition-metaldichalcogenide based interfaces
09/11/14 - 20140252415 - Electronic devices and methods of forming an electronic device are disclosed herein. An electronic device may include a first 2D atomic crystal layer; a second 2D atomic crystal layer disposed atop the first 2D atomic crystal layer; and an interface comprising van-der-Waals bonds between the first 2D atomic crystal layer...

Field effect transitor and semiconductor device using the same
09/11/14 - 20140252416 - An field effect transistor has a plurality of cells provided on a first straight line. Each cell has a plurality of multi-finger electrodes and is connected to a gate terminal electrode and a drain terminal electrode. The multi-finger electrode has at least two finger gate electrodes, a finger drain electrode,...

Semiconductor device and electronic apparatus
09/11/14 - 20140252417 - A semiconductor device includes: a device region having a semiconductor layer that includes a channel section; a device peripheral region adjoining the device region; a gate electrode provided within the device region, and having a boundary section that spans the device region and the device peripheral region; a conductive layer...

Tunnel junction field effect transistors having self-aligned source and gate electrodes and methods of forming the same
09/04/14 - 20140246699 - Methods of forming a transistor include providing a semiconductor epitaxial structure including a channel layer and barrier layer on the channel layer, forming a gate electrode on the barrier layer, etching the semiconductor epitaxial structure using the gate electrode as an etch mask to form a trench in the semiconductor...

Nitride semiconductor device and method for manufacturing same
09/04/14 - 20140246700 - According to one embodiment, a nitride semiconductor device includes a first semiconductor, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first electrode, a second electrode and a third electrode. The first, second and fourth semiconductor layers include a nitride semiconductor. The second semiconductor layer is...

Methods, devices, and systems related to forming semiconductor power devices with a handle substrate
08/28/14 - 20140239348 - Methods of manufacturing device assemblies, as well as associated semiconductor assemblies, devices, systems are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a semiconductor device assembly that includes a handle substrate, a semiconductor structure having a first side and a second side opposite...

Drain pad having a reduced termination electric field
08/28/14 - 20140239349 - In an exemplary implementation, a semiconductor device includes a drain pad on a semiconductor substrate, the drain pad being coupled to a plurality of drain fingers. The semiconductor device further includes a source pad on the semiconductor substrate, the source pad being coupled to a plurality of source fingers. The...