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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Heterojunction Device

Heterojunction Device

Heterojunction Device patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

06/26/14 - 20140175509 - Lattice mismatched hetero-epitaxial film
An embodiment concerns forming an EPI film on a substrate where the EPI film has a different lattice constant from the substrate. The EPI film and substrate may include different materials to collectively form a hetero-epitaxial device having, for example, a Si and/or SiGe substrate and a III-V or IV...

06/12/14 - 20140159111 - Semiconductor composite film with heterojunction and manufacturing method thereof
The present invention discloses a semiconductor composite film with a heterojunction and a manufacturing method thereof. The semiconductor composite film includes: a semiconductor substrate; and a semiconductor epitaxial layer, which is formed on the semiconductor substrate, and it has a first surface and a second surface opposite to each other,...

05/15/14 - 20140131768 - Bridge structure
A bridge structure for use in a semiconductor device includes a semiconductor substrate and a semiconductor structure layer. The semiconductor structure layer is formed on a surface of the semiconductor substrate and a lattice difference is formed between the semiconductor structure layer and the semiconductor substrate. The semiconductor structure layer...

04/24/14 - 20140110753 - Methods of making jfet devices with pin gate stacks
Devices and methods for providing JFET transistors with improved operating characteristics are provided. Specifically, one or more embodiments of the present invention relate to JFET transistors with a higher diode turn-on voltage. For example, one or more embodiments include a JFET with a PIN gate stack. One or more embodiments...

03/27/14 - 20140084338 - Semiconductor wafer, semiconductor device, and method for manufacturing nitride semiconductor layer
According to one embodiment, a semiconductor wafer includes a substrate, an AlN buffer layer, a foundation layer, a first high Ga composition layer, a high Al composition layer, a low Al composition layer, an intermediate unit and a second high Ga composition layer. The first layer is provided on the...

03/27/14 - 20140084339 - Compound semiconductor device and method of manufacturing the same
A compound semiconductor device includes as compound semiconductor layers: a first layer; a second layer larger in band gap than the first layer, formed above the first layer; a third layer having a p-type conductivity type, formed above the second layer; a gate electrode formed above the second layer via...

01/02/14 - 20140001513 - Layer system of a silicon-based support and a heterostructure applied directly onto the support
wherein i represents the respective dopant in the silicon substrate, Ndot represents the dopant concentration in cm−3 and EA represents an energy barrier of the dopant in eV, which energy barrier inhibits dislocation glide....

10/17/13 - 20130270606 - Semiconductor device with integrated breakdown protection
A device includes a semiconductor substrate having a first conductivity type, a device isolating region in the semiconductor substrate, defining an active area, and having a second conductivity type, a body region in the active area and having the first conductivity type, and a drain region in the active area...

08/08/13 - 20130200429 - Epitaxy level packaging
A method of growth and transfer of epitaxial structures from semiconductor crystalline substrate(s) to an assembly substrate. Using this method, the assembly substrate encloses one or more semiconductor materials and defines a wafer size that is equal to or larger than the semiconductor crystalline substrate for further wafer processing. The...

08/08/13 - 20130200430 - Electronic device with mircofilm antenna and related methods
An electronic device may include a first substrate, an electrically conductive feed line on the first substrate, an insulating layer on the first substrate and the electrically conductive feed line, a second substrate on the insulating layer, and an antenna on the second substrate and having nanofilm layers stacked on...

08/08/13 - 20130200431 - Selective area growth of germanium and silicon-germanium in silicon waveguides for on-chip optical interconnect applications
A robust fabrication process for selective area growth of semiconductors in growth windows is provided. Sidewall growth is eliminated by the presence of a spacer layer which covers the sidewalls. Undesirable exposure of the top corners of the growth windows is prevented by undercutting the growth window prior to deposition...

08/08/13 - 20130200432 - Semiconductor component, substrate and method for producing a semiconductor layer sequence
A semiconductor component includes a semiconductor body based on a nitride compound semiconductor material, and a substrate on which the semiconductor body is arranged, wherein impurities are formed in the substrate in a targeted manner....

08/01/13 - 20130193480 - Epitaxy technique for reducing threading dislocations in stressed semiconductor compounds
A solution for fabricating a semiconductor structure is provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown...

06/20/13 - 20130153960 - Anti-fuses on semiconductor fins
A device includes a substrate, isolation regions at a surface of the substrate, and a semiconductor region over a top surface of the isolation regions. A conductive feature is disposed over the top surface of the isolation regions, wherein the conductive feature is adjacent to the semiconductor region. A dielectric...

06/20/13 - 20130153961 - In-situ pre-clean prior to epitaxy
Methods for low temperature cleaning of a semiconductor surface prior to in-situ deposition have high throughput and consume very little of the thermal budget. GeH4 deposits Ge on the surface and converts any surface oxygen to GeOx. An etchant, such as Cl2 or HCl removes Ge and any GeOx and...

05/30/13 - 20130134480 - Formation of devices by epitaxial layer overgrowth
Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping and epitaxial layer overgrowth. A method includes forming an opening in a masking layer disposed over a substrate that includes a first semiconductor material. A...

05/02/13 - 20130105858 - Process for producing si(1-v-w-x)cwalxnv base material, process for producing epitaxial wafer, si(1-v-w-x)cwalxnv base material, and epitaxial wafer
A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si(1-v-w-x)CwAlxNv layer 12 (0<v<1, 0≦w<1, 0<x<1, and 0<v+w+x<1) is then grown on the Si substrate 11 by a pulsed laser deposition method....

04/04/13 - 20130082303 - High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate
A multilayered stack including alternating layers of sacrificial material layers and semiconductor material layers is formed on a base substrate. The thickness of each sacrificial material layer of the stack increases upwards from the sacrificial material layer that is formed nearest to the base substrate. Because of this difference in...

03/21/13 - 20130069110 - Low resistivity contact
Embodiments of a low resistivity contact to a semiconductor structure are disclosed. In one embodiment, a semiconductor structure includes a semiconductor layer, a semiconductor contact layer having a low bandgap on a surface of the semiconductor layer, and an electrode on a surface of the semiconductor contact layer opposite the...

03/07/13 - 20130056793 - Providing group v and group vi over pressure for thermal treatment of compound semiconductor thin films
Embodiments of the invention provide methods for forming high quality, low resistivity Group III-V or Group II-VI compounds. In one embodiment, the method includes growing a compound semiconductor layer having a n-type or p-type dopant over a substrate, the compound semiconductor layer comprising at least a first component and a...

02/07/13 - 20130032856 - Semiconductor apparatus
A semiconductor apparatus includes: a semiconductor apparatus includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a third semiconductor layer of the first conductivity type, wherein: the second semiconductor layer is formed between the first and third semiconductor layers,...

02/07/13 - 20130032857 - Silicon-germanium hydrides and methods for making and using same
The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds....

01/24/13 - 20130020611 - Semiconductor device and method of forming a structure in a target substrate for manufacturing a semiconductor device
A semiconductor device and a method of forming a structure in a target substrate for manufacturing a semiconductor device is provided. The method comprises the step of providing a masking layer on the target substrate and providing a stair-like profile in the masking layer such that the height of a...

01/03/13 - 20130001641 - Defect mitigation structures for semiconductor devices
A method and a semiconductor device for incorporating defect mitigation structures are provided. The semiconductor device comprises a substrate, a defect mitigation structure comprising a combination of layers of doped or undoped group IV alloys and metal or non-metal nitrides disposed over the substrate, and a device active layer disposed...

01/03/13 - 20130001642 - Method including producing a monocrystalline layer
A method including producing a monocrystalline layer is disclosed. A first lattice constant on a monocrystalline substrate has a second lattice constant at least in a near-surface region. The second lattice constant is different from the first lattice constant. Lattice matching atoms are implanted into the near-surface region. The near-surface...

12/27/12 - 20120326209 - Semiconductor device and method of producing the same
To provide a semiconductor device including a functional laminate having flatness and crystallinity improved by effectively passing on the crystallinity and flatness improved in a buffer to the functional laminate, and to provide a method of producing the semiconductor device; in the semiconductor device including the buffer and the functional...

12/06/12 - 20120305986 - Semiconductor structure and method for forming the same
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a wafer; a plurality of convex structures formed on the wafer, in which every two adjacent convex structures are separated by a cavity in a predetermined pattern and arranged in an array, and the...

11/29/12 - 20120299057 - Semiconductor device
A semiconductor device includes a p-type semiconductor layer and an n-type semiconductor layer that are joined by sandwiching a depletion layer with a thickness that allows transmission of a plurality of electrons and holes by direct-tunneling....

11/08/12 - 20120280273 - Methods and substrates for laser annealing
Methods and substrates for laser annealing are disclosed. The substrate includes a target region to be annealed and a plurality of reflective interfaces. The reflective interfaces cause energy received by the substrate to resonate within the target region. The method includes emitting energy toward the substrate with a laser, receiving...

11/08/12 - 20120280274 - Semiconductor structure and method for forming the same
A semiconductor structure is provided, comprising: a Si substrate; a porous structure layer formed on the Si substrate, in which the porous structure layer has a flat surface and comprises a Si1-xGex layer with low Ge content; and a Ge-containing layer formed on the porous structure layer, in which the...

11/08/12 - 20120280275 - Semiconductor wafer, electronic device, and method for producing semiconductor wafer
Provided is a semiconductor wafer including: a base wafer whose surface is made of a silicon crystal: a SixGe1-xC (0≦x<1) epitaxial crystal formed in a partial area of the silicon crystal; and a Group 3 nitride semiconductor crystal formed on the SixGe1-xC (0≦x<1) epitaxial crystal. In one example, the semiconductor...

10/04/12 - 20120248500 - Nitride semiconductor device and method of manufacturing nitride semiconductor device
A nitride semiconductor device in which contact resistance between an ohmic electrode and an ohmic recess portion is reduced and a method of manufacturing the nitride semiconductor device are provided. The nitride semiconductor device includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed...

07/12/12 - 20120175675 - Semiconductor device and method for manufacturing the same
A semiconductor device and a method for manufacturing the same are disclosed. The method comprises: forming at least one trench in a first semiconductor layer, wherein at least lower portions of respective sidewalls of the trench tilt toward outside of the trench; filling a dielectric material in the trench, thinning...

05/17/12 - 20120119258 - Vertical outgassing channels
InP epitaxial material is directly bonded onto a Silicon-On-Insulator (SOI) wafer having Vertical Outgassing Channels (VOCs) between the bonding surface and the insulator (buried oxide, or BOX) layer. H2O and other molecules near the bonding surface migrate to the closest VOC and are quenched in the buried oxide (BOX) layer...

03/22/12 - 20120068224 - Method of producing semiconductor wafer, and semiconductor wafer
A method of producing a semiconductor wafer suited to form types of devices such as HBT and FET on a single semiconductor wafer is provided. The method, by repeating steps including introducing, into a reaction chamber for forming a semiconductor by crystal growth, a first-impurity gas containing an element or...

03/15/12 - 20120061727 - Gallium nitride based semiconductor devices and methods of manufacturing the same
Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heterostructure field effect transistor (HFET) or a Schottky diode, arranged on a heat dissipation substrate. The HFET device may include a GaN-based multi-layer having a recess region; a gate arranged in...

12/29/11 - 20110316043 - Thin group iv semiconductor structures
Thin group IV semiconductor structures are provided comprising a thin Si substrate and a second region formed directly on the Si substrate, where the second region comprises either (i) a Ge1-xSnx layer; or (ii) a Ge layer having a threading dislocation density of less than about 105/cm2, and the effective...

11/10/11 - 20110272736 - Semiconductor devices and methods for fabricating the same
A semiconductor device includes a substrate including a first region and a second region each having an n-type region and a p-type region, wherein the n-type region in the first region includes a silicon channel, the p-type region in the first region includes a silicon germanium channel, and the n-type...

11/10/11 - 20110272737 - Transistor and transistor control system
A transistor includes a transistor body, and a stress application section applying stress to the transistor body. The transistor body includes a formation substrate, and a first semiconductor layer and a second semiconductor layer which are sequentially stacked on the formation substrate. The second semiconductor layer having a wider bandgap...

11/03/11 - 20110266594 - Method for obtaining a layer of aln having substantially vertical sides
the etching of the AlN layer....

09/22/11 - 20110227129 - Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate
A semiconductor wafer including: a base wafer; a seed crystal disposed on the base wafer; a compound semiconductor disposed above the seed crystal; and a high resistance layer disposed between the seed crystal and the compound semiconductor, the high resistance layer having a larger resistivity than the seed crystal, and...

09/22/11 - 20110227130 - Structures and methods of forming sige and sigec buried layer for soi/sige technology
Semiconductor structures and methods of forming semiconductor structures, and more particularly to structures and methods of forming SiGe and/or SiGeC buried layers for SOI/SiGe devices. An integrated structure includes discontinuous, buried layers having alternating Si and SiGe or SiGeC regions. The structure further includes isolation structures at an interface between...

09/15/11 - 20110220964 - Semiconductor device having field effect transistor and method for fabricating the same
A semiconductor device includes an epitaxial pattern that fills a depression region formed at a semiconductor substrate of one side of a gate pattern. The gate pattern is disposed on a body located at one side of the depression region. The sidewall of the depression region adjacent to the body...

03/10/11 - 20110057231 - Semiconductor device and method for manufacturing of the same
The present invention provides a semiconductor device including: a base substrate; a first semiconductor layer disposed on the base substrate; first ohmic electrodes disposed on a central region of the first semiconductor layer; a second ohmic electrode having a ring shape surrounding the first ohmic electrodes, on edge regions of...

01/13/11 - 20110006343 - Semiconductor wafer, method of manufacturing a semiconductor wafer, and electronic device
The objective is to improve capabilities such as high-speed switching of a compound semiconductor device. Provided is a semiconductor wafer comprising a silicon wafer; an insulating film that is formed on the silicon wafer and that has an open portion reaching the silicon wafer; a Ge crystal formed in the...

12/16/10 - 20100314661 - Semiconductor substrate, method of fabricating the same, semiconductor device, and method of fabricating the same
The present invention provides a fabrication method of a semiconductor substrate, by which a planar GaN substrate that is easily separated can be fabricated on a heterogeneous substrate, and a semiconductor device which is fabricated using the GaN substrate. The semiconductor substrate comprises a substrate, a first semiconductor layer arranged...

11/18/10 - 20100289060 - Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectronics
Microelectronic structures and devices, and method of fabricating a three-dimensional microelectronic structure is provided, comprising passing a first precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures...

11/04/10 - 20100276730 - Semiconductor device
Semiconductor devices having at least one barrier layer are disclosed. In some embodiments, a semiconductor device includes an active layer and one or more barrier layers disposed on either one side or both sides of the active layer. The active layer may be composed of a first compound semiconductor material,...

10/28/10 - 20100270588 - Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same
Formulations for voltage switchable dielectric materials include two or more different types of semiconductive materials uniformly dispersed within a dielectric matrix material. The semiconductive materials are selected to have different bandgap energies in order to provide the voltage switchable dielectric material with a stepped voltage response. The semiconductive materials can...

10/21/10 - 20100264458 - Method for manufacturing heterostructures
A method for manufacturing heterostructures for applications in the fields of electronics, optics or opto-electronics. This method includes providing a silicon oxide layer with a thickness of less than or equal to 25 nanometers on one of a donor substrate or a receiver substrate or on both substrates, heat treating...

06/10/10 - 20100140660 - Semiconductor heterostructure diodes
Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact is connected to...