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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Heterojunction Device Heterojunction DeviceHeterojunction Device patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.12/13/07 - 20070284611 - Structure of strained silicon on insulator and method of manufacturing the same Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiO2 layer formed on the insulating substrate, and a strained silicon layer formed on the SiO2 layer. ... 11/01/07 - 20070252171 - Semiconductor device and manufacturing method thereof As semiconductor regions in contact with a first main surface of a semiconductor base composed by forming an N− silicon carbide epitaxial layer on an N+ silicon carbide substrate connected to a cathode electrode, there are provided both of an N+ polycrystalline silicon layer of a same conduction type as ... 10/18/07 - 20070241366 - Field effect transistor with shifted gate A field effect transistor has a shifted gate such that the gate-source distance depends on the ratio of the threshold voltage to the drain voltage. In one embodiment, a switch may include two FETs: one FET in a series configuration and one FET in a shunt configuration. Providing a switch ... 10/04/07 - 20070228414 - Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride In the present invention a metal oxide or nitride compound which is a wide-band-gap semiconductor abuts a silicon, germanium, or alloy of silicon and/or germanium of the opposite conductivity type to form a p-n heterojunction. This p-n heterojunction can be used to advantage in various devices. In preferred embodiments, one ... 07/19/07 - 20070164311 - Ingaas/gaas lasers on-silicon produced by-lepecvd and mocvd formation of an active laser structure comprising a Gallium Arsenide waveguide layer (12) embedding a quantum well (11). ... 07/12/07 - 20070158683 - Semiconductor devices including implanted regions and protective layers and methods of forming the same Methods of forming a semiconductor device include forming a protective layer on a semiconductor layer, implanting ions having a first conductivity type through the protective layer into the semiconductor layer to form an implanted region of the semiconductor layer, and annealing the semiconductor layer and the protective layer to activate ... 07/05/07 - 20070152236 - Semiconductor nanocrystal heterostructures A semiconductor nanocrystal can have a barbell shape. The nanocrystal can include two semiconductor materials selected so that upon excitation, one charge carrier is substantially confined to the one semiconductor material and the other charge carrier is substantially confined to the other semiconductor material. ... 06/28/07 - 20070145412 - Heterojunction bipolar transistor and manufacturing method thereof The object of the present invention is to provide a heterojunction bipolar transistor with high breakdown tolerance which can be manufactured at a high reproducibility and a high yield, the heterojunction bipolar transistor includes: a sub-collector layer; a collector layer formed on the sub-collector layer; a base layer formed on ... 03/15/07 - 20070057286 - Solid-state imaging device and method for producing the same A method for producing a solid-state imaging device, which including: a photoelectric conversion section; a charge transfer section having a charge transfer electrode; and an antireflection film covering a light-receiving region in the photoelectric conversion section, wherein forming the antireflection film includes: forming a sidewall on a lateral wall of ... 03/15/07 - 20070057285 - Wurtzite thin film, laminate containing wurtzite crystalline layer and their manufacturing methods According to the present invention, a thin film made of a wurtzite structure compound is manufactured by a reactive sputtering using a metal material as a target, and a nitrogen gas or an oxygen gas as a reactive gas. By optimizing film-forming conditions when manufacturing the film, it is possible ... 03/08/07 - 20070051975 - Semiconductor heterostructure and method for forming same The invention relates to a method for forming a semiconductor heterostructure by providing a substrate with a first in-plane lattice parameter a1, providing a buffer layer with a second in-plane lattice parameter a2 and providing a top layer over the buffer layer. In order to improve the surface roughness of ... 03/01/07 - 20070045660 - Heterojunction structure of nitride semiconductor and nano-device or an array thereof comprising same A heterojunction structure composed of a nitride semiconductor thin film and nanostructures epitaxially grown thereon exhibits high luminescence efficiency property due to facilitated tunneling of electrons through the nano-sized junction, and thus can be advantageously used in light emitting devices. ... 01/25/07 - 20070018198 - High electron mobility electronic device structures comprising native substrates and methods for making the same An electronic device structure comprises a substrate layer of semi-insulating AlxGayInzN, a first layer comprising AlxGayInzN, a second layer comprising Alx′Gay′Inz′N, and at least one conductive terminal disposed in or on any of the foregoing layers, with the first and second layers being adapted to form a two dimensional electron ... 11/09/06 - 20060249748 - Gallium nitride material structures including substrates and methods associated with the same Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, such as strain-absorbing layers and/or transition layers, which also promote favorable stress conditions. The reduction in ... 10/26/06 - 20060237743 - Heterojunction bipolar transistor and method for fabricating the same On a high-concentration n-type first sub-collector layer, a high-concentration n-type second sub-collector layer made of a material having a small bandgap, an i-type or low-concentration n-type collector layer, a high-concentration p-type base layer, an n-type emitter layer made of a material having a large bandgap, a high-concentration n-type emitter cap ... 10/19/06 - 20060231859 - Heterojunction bipolar transistor An n-type InP sub collector layer 2 heavily doped with silicon (Si), an InP collector layer 3, a p-type GaAs(0.51)Sb(0.49) base layer 4 heavily doped with carbon (C), an n-type In(1-y)Al(y)P emitter layer 7 doped with Si, an n-type InP cap layer 8 heavily doped with Si, and an n-type ... 06/29/06 - 20060138453 - Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer An organic photosensitive optoelectronic device, having an anode, a cathode, and an organic blocking layer between the anode and the cathode is described, wherein the blocking layer comprises a phenanthroline derivative, and at least partially blocks at least one of excitons, electrons, and holes. ... 06/08/06 - 20060118818 - Semiconductor device An aspect of the present invention provides a semiconductor device that includes, a first semiconductor body of a first conductivity type, a first switching mechanism provided on the first semiconductor body, configured and arranged to switch on/off current flowing through the semiconductor device, and a first reverse-blocking heterojunction diode provided ... 06/08/06 - 20060118817 - Stress-free composite substrate and method of manufacturing such a composite substrate A stress free composite substrate is disclosed comprising a carrier (2) composed of a carrier material, a first layer (12) composed of a first material, and an intermediate layer composed of a second material being located between the carrier (2) and the first layer (12), wherein the first material has ... 04/27/06 - 20060086950 - Method for making a passivated semiconductor substrate The present invention is related to a method for making a passivated semiconductor substrate comprising the steps of providing a substrate surface comprising or consisting of mono-crystalline semiconductor material other than silicon and forming a silicon layer on the substrate surface, such that the silicon layer is substantially lattice matched ... 04/20/06 - 20060081873 - High temperature light-emitting diodes A heterostructure semiconductor device capable of emitting electromagnetic radiation and having a junction with opposite conductivity type materials on either side thereof supported on a substrate with an active layer therebetween comprising zinc oxide and having a band gap energy that is less than that of either of the opposite ... 03/23/06 - 20060060885 - Nanoparticle deposition process An apparatus composed of: (a) a substrate; and (b) a deposited composition comprising a liquid and a plurality of metal nanoparticles with a covalently bonded stabilizer. ... 02/09/06 - 20060027834 - Stacked organic photosensitive devices A device is provided having a first electrode, a second electrode, a first photoactive region having a characteristic absorption wavelength λ1 and a second photoactive region having a characteristic absorption wavelength λ2. The photoactive regions are disposed between the first and second electrodes, and further positioned on the same side ... 01/05/06 - 20060001043 - Cmos image sensor and fabricating method thereof A CMOS image sensor and fabricating method thereof are disclosed, by which a dark current can be reduced. The present invention includes a first conductive type semiconductor substrate divided into an active area and a field area, an STI layer formed in the field area to divide the first conductive ... 12/15/05 - 20050274975 - Iii-v group nitride system semiconductor self-standing substrate, method of making the same and iii-v group nitride system semiconductor wafer A III-V group nitride system semiconductor self-standing substrate has III-V group nitride system semiconductor single crystal with a hexagonal crystal system crystalline structure. The substrate is provided with a polished surface at every position of which crystal orientation perpendicular to the substrate surface is inclined 0.09 degrees or more from ... 12/08/05 - 20050269595 - Semiconductor device and method for manufacturing the same A semiconductor device includes a Si substrate, an insulating film formed on onepart of the Si substrate, a bulk Si region grown on other part of the Si substrate other than the insulating film, Si1-xGex (0<x≦1) thin film formed on the insulating film in direct contact with the insulating film, ... 12/08/05 - 20050269594 - Transistors amd methods for making the same Apparatus comprising: a first compound semiconductor composition layer doped to have a first charge carrier polarity; a second compound semiconductor composition layer doped to have a second charge carrier polarity and located on the first layer; a third compound semiconductor composition layer doped to have the first charge carrier polarity ... 10/27/05 - 20050236645 - Structure and method of forming bipolar transistor having a self-aligned raised extrinsic base using self-aligned etch stop layer A bipolar transistor structure and method of making the bipolar transistor are provided. The bipolar transistor includes a collector region, an intrinsic base layer overlying the collector region, and an emitter overlying the intrinsic base layer. An opened etch stop layer includes a layer of dielectric material overlying the intrinsic ... 08/18/05 - 20050179052 - Heterojunction structure of nitride semiconductor and nano-device or an array thereof comprising same A heterojunction structure composed of a nitride semiconductor thin film and nanostructures epitaxially grown thereon exhibits high luminescence efficiency property due to facilitated tunneling of electrons through the nano-sized junction, and thus can be advantageously used in light emitting devices. ... 07/28/05 - 20050161702 - Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors. Gallium nitride is grown on the non-gallium nitride posts, including on the non-gallium nitride tops. Preferably, gallium nitride pyramids are grown ... ### FreshPatents.com Support |