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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Regenerative Type Switching Device (e.g., Scr, Comfet, Thyristor) > Device Protection (e.g., From Overvoltage) Device Protection (e.g., From Overvoltage)Device Protection (e.g., From Overvoltage) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/17/08 - 20080012044 - On-chip structure for electrostatic discharge (esd) protection A complementary SCR-based structure enables a tunable holding voltage for robust and versatile ESD protection. The structureare n-channel high-holding-voltage low-voltage -trigger silicon controller rectifier (N-HHLVTSCR) device and p-channel high-holding-voltage low-voltage -trigger silicon controller rectifier (P-HHLVTSCR) device. The regions of the N-HHLVTSCR and P-HHLVTSCR devices are formed during normal processing steps ... 01/03/08 - 20080001168 - Triggered silicon controlled rectifier for rf esd protection An ESD protection circuit is formed at the input/output interface contact of an integrated circuit to protect the integrated circuit from damage caused by an ESD event. The ESD protection circuit has a polysilicon bounded SCR connected between a signal input/output interface contact of the integrated circuit and a power ... 12/06/07 - 20070278514 - Semiconductor component comprising a temporary field stopping area, and method for the production thereof The invention relates to a semiconductor component comprising a buried temporarily n-doped area (9), which is effective only in the event of turn-off from the conducting to the blocking state of the semiconductor component and prevents chopping of the tail current in order thus to improve the turn-off softness. Said ... 10/25/07 - 20070246740 - Transistor with increased esd robustness and related layout method thereof The invention relates to a layout method for a transistor with improved ESD robustness. The layout method includes defining a ring region from a first conductive type; defining a first and a second rectangular diffusion regions from a second conductive type, wherein the first and second rectangular diffusion regions are ... 10/04/07 - 20070228412 - Low voltage triggering silicon controlled rectifier and circuit thereof A low voltage triggering silicon controlled rectifier (LVTSCR) is disclosed. The LVTSCR utilizes an added resistor disposed in a second doped region between the anode of the LVTSCR and the emitter of the parasitical bipolar PNP transistor to increase the holding voltage thereof when the LVTSCR is triggered. The LVTSCR ... 07/12/07 - 20070158681 - Power integrated circuit device having embedded high-side power switch In one embodiment, a power integrated circuit device is provided. The power integrated circuit device includes a high-side power switch having a high voltage transistor and a low voltage transistor. The high voltage transistor has a gate, a source, and a drain, and is capable of withstanding a high voltage ... 06/28/07 - 20070145411 - Trench polysilicon diode Embodiments of the present invention include a method of manufacturing a trench polysilicon diode. The method includes forming a N− (P−) type epitaxial region on a N+ (P+) type substrate and forming a trench in the N− (P−) type epitaxial region. The method further includes forming a insulating layer in ... 06/14/07 - 20070131965 - Triple-well low-voltage-triggered esd protection device An ESD protection device with a silicon controlled rectifier (SCR) structure which is applied to a nano-device-based high-speed I/O interface circuit and semiconductor substrate operated by a low power voltage. The triple-well low-voltage-triggered ESD protection device includes: a deep n-type well formed on a p-type substrate; n- and p-type wells ... 06/07/07 - 20070126024 - Over charge protection device An over-voltage protection device includes a substrate including an upper surface and a lower surface; a first electrode provided on the upper surface of the substrate; a second electrode provided on the lower surface on the substrate; a first conductive layer overlying the lower surface of the substrate, the first ... 05/31/07 - 20070120146 - Differential input/output device including electro static discharge (esd) protection circuit A differential input/output device including an electro static discharge protection circuit is provided. The differential input/output device includes a P-type differential pair. The P-type differential pair includes two P-type transistors. The gate of each P-type transistor is coupled to an N-type transistor to protect the P-type transistor when CDM ESD ... 04/19/07 - 20070085108 - Liquid crystalline polymer and multilayer polymer-based passive signal processing components for rf/wireless multi-band applications The present invention provides all organic fully-packaged miniature bandpass filters, baluns, diplexers, multiplexers, couplers and a combination of the above manufactured using liquid crystalline polymer (LCP) and other multilayer polymer based substrates. These devices are manufactured using one or more LCP layers having integrated passive components formed thereon to provide ... 03/29/07 - 20070069237 - Systems for providing electrostatic discharge protection Systems for providing electrostatic discharge (ESD) protection. One of the Systems has a plurality of first-type thin film diode elements coupled to each other in series, and a plurality of second-type thin film diode elements coupled to each other in series. The first-type thin film elements are electrically connected to ... 03/22/07 - 20070063218 - Semiconductor device and electrostatic discharge protection device A semiconductor device is provided. The semiconductor device is suitable for an electrostatic discharge protection circuit. The semiconductor device includes a gate structure, an N-type source region, an N-type well region, an N-type drain region, and an N-doped region. Wherein, the gate structure comprises a gate and a gate oxide ... 02/15/07 - 20070034897 - Esd protecting circuit and manufacturing method thereof An ESP protecting circuit and a manufacturing method thereof are provided. The ESP protecting circuit includes a device isolation layer, first and second high-concentration impurity regions, a third high-concentration impurity region of a complementary type, first and second conductive wells, and a fourth conductive impurity region. The ESD protecting circuit ... 02/15/07 - 20070034896 - Silicon-controlled rectifier for electrostatic discharge protection circuits and structure thereof A Silicon-Controlled Rectifier (SCR) for Electrostatic Discharge (ESD) protection includes an isolation device. The isolation device isolates a main ground voltage line, connected to a first cathode, from a peripheral ground voltage line, connected to a second cathode. As result, even when noise occurs in the peripheral ground voltage line ... 02/01/07 - 20070023779 - Semiconductor device A semiconductor device includes a field effect transistor and a pn junction diode formed on a substrate. The field effect transistor has a source electrode, a drain electrode and a gate electrode formed on an element forming layer including a plurality of nitride semiconductor layers. The diode includes a p-type ... 06/22/06 - 20060131605 - Low capacitance two-terminal barrier controlled tvs diodes A two-terminal barrier controlled TVS diode has a depletion region barrier blocking majority carrier flow through the channel region at the vicinity of the cathode region at bias levels below the predetermined clamping voltage applied between the anode electrode and the cathode electrode, and may be arranged such that the ... 05/11/06 - 20060097280 - Semiconductor diode and method for the production thereof In a semiconductor system 20 made up of multiple sublayers, a sublayer over the largest part of a cross-sectional area BC in the interior of the semiconductor system borders immediately on the first sublayer, while bordering on a second sublayer only in a comparatively narrow edge region of the cross-sectional ... 04/27/06 - 20060086949 - Semiconductor structure and method of making same A semiconductor structure includes a substrate having a surface and being made of a material that provides atypical surface properties to the surface, a bonding layer on the surface of the substrate, and a further layer molecularly bonded to the bonding layer. A method for fabricating such a semiconductor structure ... 02/09/06 - 20060027833 - Silicon carbide semiconductor device and method of manufacturing the same A silicon carbide semiconductor device has a silicon carbide substrate, a gate electrode made of polycrystalline silicon, a three-layered gate insulating film made of a silicon oxide film, a silicon nitride film and a silicon nitride thermally-oxidized film, interposed between the silicon carbide substrate and the gate electrode, a polycrystalline ... 08/11/05 - 20050173727 - Triggered silicon controlled rectifier for rf esd protection An ESD protection circuit is formed at the input/output interface contact of an integrated circuit to protect the integrated circuit from damage caused by an ESD event. The ESD protection circuit has a polysilicon bounded SCR connected between a signal input/output interface contact of the integrated circuit and a power ... 07/14/05 - 20050151160 - On-chip structure for electrostatic discharge (esd) protection A complementary SCR-based structure enables a tunable holding voltage for robust and versatile ESD protection. The structure are n-channel high-holding-voltage low-voltage-trigger silicon controller rectifier (N-HHLVTSCR) device and p-channel high-holding-voltage low-voltage-trigger silicon controller rectifier (P-HHLVTSCR) device. The regions of the N-HHLVTSCR and P-HHLVTSCR devices are formed during normal processing steps in ... ### FreshPatents.com Support |