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With Extended Latchup Current Level (e.g., Comfet Device)

With Extended Latchup Current Level (e.g., Comfet Device) patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

Related Categories:

Active Solid-state Devices (e.g., Transistors, Solid-state Diodes)


Regenerative Type Switching Device (e.g., Scr, Comfet, Thyristor) > J-fet (junction Field Effect Transistor) > With Extended Latchup Current Level (e.g., Comfet Device)



Semiconductor device and insulated gate bipolar transistor with barrier regions
05/28/15 - 20150144988 - In a semiconductor device a barrier region is sandwiched between a drift region and a charge carrier transfer region. The barrier and charge carrier transfer regions form a pn junction. The barrier and drift regions form a homojunction. A mean impurity concentration in the barrier region is at least ten...

Power semiconductor device and method of manufacturing the same
05/28/15 - 20150144989 - A power semiconductor device may include: a first semiconductor region having a first conductivity type; a second semiconductor region having a second conductivity type and formed on the first semiconductor region; a third semiconductor region having the first conductivity type and formed in an upper portion of the second semiconductor...

Power semiconductor device and method of manufacturing the same
05/28/15 - 20150144990 - A power semiconductor device may include a first semiconductor region having a first conductivity type, a second semiconductor region having a second conductivity type formed on an upper portion of the first semiconductor region, a third semiconductor region having a first conductivity type formed in an inner portion of an...

Power module package and method of manufacturing the same
05/28/15 - 20150144991 - Disclosed herein are a power module package and a method of manufacturing the same. The power module package includes first and second semiconductor devices mounted on sides of first and second lead frames, ends of which are separated from each other, respectively, a support pin corresponding to a mounting position...

Power semiconductor device
05/28/15 - 20150144992 - A power semiconductor device may include: an active region having a current flowing through a channel formed therein at the time of a turn-on operation of the power semiconductor device; an termination region formed in the vicinity of the active region; a plurality of trenches formed in a length direction...

Power semiconductor device
05/28/15 - 20150144993 - A power semiconductor device may include: an active region having a current flowing through a channel formed therein at the time of a turn-on operation of the power semiconductor device; a termination region formed in the vicinity of the active region; a plurality of first trenches formed lengthwise in one...

Power semiconductor device
05/28/15 - 20150144994 - A power semiconductor device may include: a first semiconductor layer having a first conductivity type; a second semiconductor layer formed on the first semiconductor layer, having a concentration of impurities higher than that of the first semiconductor layer, and having the first conductivity type; a third semiconductor layer formed on...

Semiconductor device
05/28/15 - 20150144995 - In the reverse-conducting IGBT according to the present invention, an n-type buffer layer surrounds a p-type collector layer. A p-type separation layer surrounds an n-type cathode layer. The n-type buffer layer separates the p-type collector layer and the p-type separation layer from each other. The p-type separation layer separates the...

Charge reservoir igbt top structure
05/21/15 - 20150137175 - An IGBT device includes one or more trench gates disposed over a semiconductor substrate and a floating body region of the first conductivity type disposed between two neighboring trench gates and between a semiconductor substrate and a heavily doped top region of the second conductivity type. A body region of...

Semiconductor power device
05/21/15 - 20150137176 - A semiconductor power device is provided, comprising a substrate of a first conductive type, a buffering layer of a second conductive type formed on the substrate, a voltage supporting layer formed on the buffering layer, and alternating sections of different conductive types formed at the substrate. The voltage supporting layer...

Semiconductor device having polysilicon plugs with silicide crystallites
05/21/15 - 20150137177 - A semiconductor device includes a field effect transistor structure having source zones of a first conductivity type and body zones of a second conductivity type which is the opposite of the first conductivity type, the source zones adjoining a first surface of a semiconductor die comprising the source and the...

Semiconductor device
05/14/15 - 20150129927 - A semiconductor device includes a first conductivity-type drift layer, a second conductivity-type base layer formed in a front surface portion of the drift layer, a second conductivity-type collector layer formed in the drift layer and separated from the base layer, gate insulation layers formed on a surface of the base...

Packaged semiconductor device, a semiconductor device and a method of manufacturing a packaged semiconductor device
05/14/15 - 20150129928 - A packaged semiconductor device comprising a package and a semiconductor device is described. The semiconductor device comprises a first and a second GND-pad bonded to one or more GND-pins with a first and a second bond wire respectively, a first functional pad bonded to a first functional pin with a...

Power semiconductor device and method of fabricating the same
05/07/15 - 20150123164 - A power semiconductor device may include a first conductivity type first semiconductor region; a second conductivity type second semiconductor region formed on an upper portion of the first semiconductor region; a first conductivity type third semiconductor region formed in an upper inner side of the second semiconductor region; a trench...

High-voltage insulated gate type power semiconductor device and method of manufacturing the same
05/07/15 - 20150123165 - A high-voltage insulated gate type power semiconductor device includes a low-concentration first conductivity type base layer; a plurality of trenches selectively formed with large intervals and narrow intervals provided alternately, in a front surface of the low-concentration first conductivity type base layer; a gate insulating film formed on a surface...

Semiconductor device and manufacturing method of the same
04/30/15 - 20150115314 - In a semiconductor device, a trench includes a first trench that has an opening portion on a surface of a base layer, and a second trench that is communicated with the first trench and in which a distance between opposed side walls is greater than opposed side walls of the...

Fabrication method of semiconductor device and the semiconductor device
04/23/15 - 20150108539 - A fabrication method of a semiconductor device includes forming a mask insulating film having a specified thickness on the top surface of an n-type semiconductor substrate, forming an opening at a specified position in the mask insulating film, carrying out ion implantation with p-type impurity ions onto the top surface,...

Semiconductor device
04/23/15 - 20150108540 - A semiconductor device includes: a first semiconductor region; a second semiconductor region; a third semiconductor region; a fourth semiconductor region; an insulation film, which is arranged on an inner wall of a recess that extends from an upper surface of the fourth semiconductor region and reaches the second semiconductor region...

Semiconductor device
04/23/15 - 20150108541 - A semiconductor device in which short circuit capability can be improved while decline in overall current capability is suppressed. In the semiconductor device, a plurality of IGBTs (insulated gate bipolar transistors) arranged in a row in one direction over the main surface of a semiconductor substrate include an IGBT located...

Semiconductor device and method for forming a semiconductor device
04/02/15 - 20150091051 - A semiconductor device includes an insulated gate bipolar transistor (IGBT) arrangement. The IGBT arrangement includes a carrier confinement reduction region laterally arranged between a cell region and a sensitive region. The IGBT arrangement is configured or formed so that the cell region has a first average density of free charge...

Semiconductor device and method for forming a semiconductor device
04/02/15 - 20150091052 - A semiconductor device includes an insulated gate bipolar transistor (IGBT) arrangement. The IGBT arrangement includes a first configuration region of emitter-side insulated gate bipolar transistor structures and a second configuration region of emitter-side insulated gate bipolar transistor structures. The first configuration region and the second configuration region are arranged at...

Igbt with reduced feedback capacitance
04/02/15 - 20150091053 - An IGBT includes at least one first type transistor cell, including a base region, a first emitter region, a body region, and a second emitter region. The body region is arranged between the first emitter region and the base region. The base region is arranged between the body region and...

Semiconductor device
03/26/15 - 20150084093 - A semiconductor device includes: a first semiconductor region; a second semiconductor region; a third semiconductor region; a fourth semiconductor region; an insulation film, which is arranged on an inner wall of a recess extending from an upper surface to the second semiconductor region; a control electrode, which is arranged on...

Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturing
03/19/15 - 20150076554 - An IGBT includes a mesa section that extends between two cell trench structures from a first surface of a semiconductor portion to a layer section of the semiconductor portion. A source region, which is electrically connected to an emitter electrode, is formed in the mesa section. A doped region, which...

Semiconductor device and method of manufacturing the same
03/12/15 - 20150069459 - According to one embodiment, a semiconductor device includes a semiconductor substrate in which a recess is provided on a back surface thereof, and a shape of the recess is reflected on a surface of a metal film which is also provided on the back surface of the semiconductor substrate....

Semiconductor device
03/12/15 - 20150069460 - In one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type having first and second faces, and a second semiconductor layer of a second conductivity type disposed above the first face of the first semiconductor layer. The device further includes control electrodes facing the first...

Semiconductor device
03/12/15 - 20150069461 - This device includes a first base layer of a first conduction type. A second base-layer of a second conduction type is provided above the first base-layer. A first semiconductor layer of the first conduction type is above an opposite side of the second base-layer to the first base-layer. A second...

Semiconductor device and semiconductor device manufacturing method
03/12/15 - 20150069462 - First and second n-type field stop layers in an n− drift region come into contact with a p+ collector layer. The first n-type field stop layer has an impurity concentration reduced toward an n+ emitter region at a steep gradient. The second n-type field stop layer has an impurity concentration...

Substrate for mounting multiple power transistors thereon and power semiconductor module
03/12/15 - 20150069463 - Exemplary embodiments provide a substrate for mounting multiple power transistors. The substrate has a first metallization on which the power transistors are mountable with an associated collector or emitter, and which extends in at least one line on the substrate. A second metallization extends in an area next to the...

Process method and structure for high voltage mosfets
03/05/15 - 20150060936 - This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches formed at a top portion of the semiconductor substrate extending laterally across the semiconductor substrate along a longitudinal direction each having a nonlinear portion comprising a sidewall perpendicular to...

Semiconductor device
03/05/15 - 20150060937 - A semiconductor device includes: an FET structure that is formed next to a looped trench on a semiconductor substrate and that has an n+ emitter region and an n− drain region facing each other in the depth direction of the looped trench across a p-type base region; a p-type floating...

Semiconductor device and semiconductor device manufacturing method
03/05/15 - 20150060938 - An n− type drift region, an n-type field stop region, and an n− type FZ wafer are provided in an n− type wafer. An edge termination structure portion is provided in a chip outer peripheral portion of regions of the n− type wafer, surrounding an active region inside a chip...

Semiconductor device
02/26/15 - 20150054024 - A semiconductor device includes a semiconductor substrate including a semiconductor layer, a power device formed in the semiconductor substrate, a plurality of concentric guard rings formed in the semiconductor substrate and surrounding the power device, and voltage applying means for applying successively higher voltages respectively to the plurality of concentric...

Semiconductor device and semiconductor device manufacturing method
02/26/15 - 20150054025 - An n-type low lifetime adjustment region is provided in a portion inside an n− type drift region deeper than the bottom surface of a termination p-type base region or p-type guard ring from a substrate front surface, separated from the termination p-type base region and the p-type guard ring. The...

Inhomogeneous power semiconductor devices
02/26/15 - 20150054026 - A power semiconductor device includes a power transistor including a plurality of transistor cells on a semiconductor die. At least some of the transistor cells are inhomogeneous by design so that the number of current filaments in the transistor cells with reduced local current density increases and fewer transient avalanche...

Semiconductor device
02/19/15 - 20150048413 - A semiconductor device includes: a drift layer; a base layer arranged in a surface portion of the drift layer; multiple trenches penetrating the base layer and reaching the drift layer; and a gate electrode arranged on the gate insulation film in each trench. Each trench includes: a first trench having...

Igbt device with buried emitter regions
02/19/15 - 20150048414 - An embodiment of an IGBT device is integrated in a chip of semiconductor material including a substrate of a first type of conductivity, an active layer of a second type of conductivity formed on an inner surface of the substrate, a body region of the first type of conductivity extending...

Silicon-controlled rectification device with high efficiency
02/12/15 - 20150041848 - A silicon-controlled rectification device with high efficiency is disclosed, which comprises a P-type region surrounding an N-type region. A first P-type heavily doped area is arranged in the N-type region and connected with a high-voltage terminal. A plurality of second N-type heavily doped areas is arranged in the N-type region....

Super junction semiconductor device and manufacturing method
02/05/15 - 20150035002 - A method for manufacturing a super junction semiconductor device includes forming a trench in an n-doped semiconductor body and forming a first p-doped semiconductor layer lining sidewalls and a bottom side of the trench. The method further includes removing a part of the first p-doped semiconductor layer at the sidewalls...

Dual trench-gate igbt structure
02/05/15 - 20150035003 - Aspects of the present disclosure describe an IGBT device including a substrate including a bottom semiconductor layer of a first conductivity type and an upper semiconductor layer of a second conductivity type, at least one first gate formed in a corresponding first trench disposed over the substrate, and a second...

Semiconductor devices with graded dopant regions
02/05/15 - 20150035004 - Most semiconductor devices manufactured today, have uniform dopant concentration, either in the lateral or vertical device active (and isolation) regions. By grading the dopant concentration, the performance in various semiconductor devices can be significantly improved. Performance improvements can be obtained in application specific areas like increase in frequency of operation...

Insulated gate bipolar transistor with high emitter gate capacitance
01/29/15 - 20150028382 - An IGBT is disclosed with a high emitter-gate capacitance, wherein an active cell region can include plural emitter and gate regions. A termination edge region can include a varied lateral doping region VLD. Each gate polysilicon layer can be arranged at a surface of the semiconductor substrate in the gate...

Semiconductor device
01/22/15 - 20150021655 - A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type on the first semiconductor region, a third semiconductor region of the first conductivity type on the second semiconductor region, a control electrode disposed within and insulated from the...

Semiconductor device
01/22/15 - 20150021656 - According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a first control electrode, a first electrode, a second control electrode, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a first insulating...

Semiconductor device
01/22/15 - 20150021657 - According to one embodiment, a semiconductor device includes: first and second electrodes; a first semiconductor region being in ohmic contact with the first electrode; a second semiconductor region being in contact with the first semiconductor region and the first electrode, and the second semiconductor region having a lower impurity concentration...

Semiconductor device
01/15/15 - 20150014741 - A semiconductor device includes a semiconductor substrate in which an active region and an edge termination region are defined, a semiconductor element formed in the active region, and first to fourth P layers formed in a region spanning from an edge portion of the active region to the edge termination...

Semiconductor device and production method for semiconductor device
01/15/15 - 20150014742 - Depth of a termination p base region provided in a termination portion of an active region close to an edge termination structure portion is more than depth of a p-type base region provided inside the termination p base region. An n-type high-concentration region is provided from one main surface of...

Igbt having an emitter region with first and second doping regions
01/08/15 - 20150008477 - An IGBT includes a semiconductor substrate, a source metallization and an emitter metallization. The semiconductor substrate includes a source region of a first conductivity type, a body region of a second conductivity type, a drift region of the first conductivity type, and an emitter region of the second conductivity type....

Semiconductor device and manufacturing method of the same
01/08/15 - 20150008478 - A manufacturing method of a semiconductor device includes applying at least one of a particle ray and a radial ray to a surface of a semiconductor substrate on which a transistor including a gate insulation film and a gate electrode has been formed adjacent to the surface, and annealing the...

Igbt and igbt manufacturing method
01/08/15 - 20150008479 - An IGBT manufacturing method is provided. The IGBT has an n-type emitter region, a p-type top body region, an n-type intermediate region, a p-type bottom body region, an n-type drift region, a p-type collector region, trenches penetrating the emitter region, the top body region, the intermediate region and the bottom...

Semiconductor component
01/08/15 - 20150008480 - A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and at least one zone of a second conduction type in a rear side. A drift zone of the first conduction type in the cell...

Power semiconductor device and method of manufacturing the same
01/01/15 - 20150001578 - In a general aspect, a power semiconductor device can include a substrate having a first surface and a second surface. The substrate can include at least one uneven portion defined on the second surface. The device can include a gate electrode and an emitter electrode disposed on the first surface...

Semiconductor device
12/25/14 - 20140374791 - A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region having a second conductivity type, a first insulating layer on the first and second semiconductor regions, and field plate electrodes are provided in the first insulating layer at different distances from the first...

Method for manufacturing a vertical bipolar transistor compatible with cmos manufacturing methods
12/25/14 - 20140374792 - The present disclosure relates to a method for manufacturing a bipolar transistor, the method comprising steps of: forming a trench to isolate a first region from a second region in a semiconductor wafer, and to isolate these regions from the rest of the wafer, forming a first P-doped well, in...

Manufacturing method for semiconductor device
12/25/14 - 20140374793 - A p+ collector layer is provided in a rear surface of a semiconductor substrate which will be an n− drift layer and an n+ field stop layer is provided in a region which is deeper than the p+ collector layer formed on the rear surface side. A front surface element...

Power semiconductor with a si chip and a wideband chip having matched loss and area ratios
12/25/14 - 20140374794 - A power semiconductor apparatus which is provided with a first power semiconductor device using Si as a base substance and a second power semiconductor device using a semiconductor having an energy bandgap wider than the energy bandgap of Si as a base substance, and includes a first insulated metal substrate...

Semiconductor device and method of manufacturing semiconductor device
12/18/14 - 20140367737 - A semiconductor device includes a substrate of a first conductivity type, a first impurity region of a second conductivity type formed on a top surface side of the substrate, a second impurity region of the second conductivity type formed on the top surface side of the substrate and in contact...

Semiconductor device
11/27/14 - 20140346561 - In a semiconductor substrate of a semiconductor device, a drift layer, a body layer, an emitter layer, and a trench gate electrode are formed. When the semiconductor substrate is viewed in a plane manner, the semiconductor substrate is divided into a first region covered with a heat dissipation member, and...

Trench insulated-gate bipolar transistor and manufacture method thereof
11/27/14 - 20140346562 - A Trench Insulated Gate Bipolar Transistor (IGBT) and a manufacture method thereof are provided by the present invention, which belongs to the field of IGBT technical field. The manufacture method includes following steps: (1) preparing a semiconductor substrate; (2) forming an epitaxial layer grow on a first side of the...

Semiconductor device
11/20/14 - 20140339599 - A semiconductor device includes a first gate electrode that is provided on a first insulating film along one side wall of a first trench and is provided in a second trench, a shield electrode that is provided on a second insulating film along the other side wall of the first...

Semiconductor device
11/20/14 - 20140339600 - A trench gate MOS structure is provided on one main surface of a semiconductor substrate which will be an n− drift region. An n shell region is provided in the n− drift region so that it contacts a surface of a p base region close to the n− drift region...

A process method and structure for high voltage mosfets
11/13/14 - 20140332844 - This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches each having a trench endpoint with an endpoint sidewall perpendicular to a longitudinal direction of the trench and extends vertically downward from a top surface to a trench bottom...

Topside structures for an insulated gate bipolar transistor (igbt) device to achieve improved device perforemances
11/13/14 - 20140332845 - This invention discloses an insulated gate bipolar transistor (IGBT) device formed in a semiconductor substrate. The IGBT device has a split-shielded trench gate that includes an upper gate segment and a lower shield segment. The IGBT device may further include a dummy trench filled with a dielectric layer disposed at...

Transistor-type protection device, semiconductor integrated circuit, and manufacturing method of the same
11/13/14 - 20140332846 - A transistor-type protection device includes: a semiconductor substrate; a well including a first-conductivity-type semiconductor formed in the semiconductor substrate; a source region including a second-conductivity-type semiconductor formed in the well; a gate electrode formed above the well via a gate insulating film at one side of the source region; a...

Trench type power transistor device
11/06/14 - 20140327039 - The present invention provides a trench type power transistor device including a substrate, an epitaxial layer, a doped diffusion region, a doped source region, and a gate structure. The substrate, the doped diffusion region, and the doped source region have a first conductivity type, and the substrate has an active...

Power semiconductor device
11/06/14 - 20140327040 - Provided is a power semiconductor device including a semiconductor substrate, in which a current flows in a thickness direction of the semiconductor substrate. The semiconductor substrate includes a resistance control structure configured so that a resistance to the current becomes higher in a central portion of the semiconductor substrate than...

Semiconductor device
10/30/14 - 20140319577 - A semiconductor device disclosed in this specification includes a p+ contact region, an n+ source region, a p− base region, an n− drift region, a gate electrode, an insulator, a p+ electric field alleviating layer, and a p− positive hole extraction region. The electric field alleviating layer has same impurity...

Insulated gate bipolar transistor
10/30/14 - 20140319578 - A semiconductor body of an IGBT includes: a first base region of a second conductivity type; a source region of a first conductivity type different from the second conductivity type and forming a first pn-junction with the first base region; a drift region of the first conductivity type and forming...

Power device and method of manufacturing the same
10/23/14 - 20140312382 - Provided are a power device having an improved field stop layer and a method of manufacturing the same. The power device includes: a first field stop layer formed of a semiconductor substrate and of a first conductive type; a second field stop layer formed on the first field stop layer...

Power semiconductor device and method of manufacturing the same
10/23/14 - 20140312383 - A power semiconductor device may include: abase substrate including a first conductive type drift layer; a second conductive type semiconductor substrate disposed on the other surface of the base substrate; a first conductive type diffusion layer disposed in the base substrate and having an impurity concentration higher than that of...

Nanotube semiconductor devices
10/09/14 - 20140299914 - Semiconductor devices are formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. In one embodiment, a semiconductor device is formed in a second semiconductor layer disposed on a first semiconductor layer of opposite conductivity type and having trenches formed therein where the trenches extend from the...

Semiconductor device
10/09/14 - 20140299915 - In a semiconductor device having a vertical semiconductor element configured to pass an electric current between an upper electrode and a lower electrode, a field stop layer includes a phosphorus/arsenic layer doped with phosphorus or arsenic and a proton layer doped with proton. The phosphorus/arsenic layer is formed from a...