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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Regenerative Type Switching Device (e.g., Scr, Comfet, Thyristor) > J-fet (junction Field Effect Transistor) > With Extended Latchup Current Level (e.g., Comfet Device)

With Extended Latchup Current Level (e.g., Comfet Device)

With Extended Latchup Current Level (e.g., Comfet Device) patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

04/03/14 - 20140091358 - Mct device with base-width-determined latching and non-latching states
Methods and systems for a gate-controlled thyristor which switches between narrow-base operation in the ON state and wide-base operation in the OFF state, and which can only sustain latch-up in the narrow-base ON state....

03/27/14 - 20140084332 - Semiconductor device and method for fabricating the same
According to example embodiments of inventive concepts: a semiconductor device includes: first and second trench gates extending long in one direction in a substrate; third and fourth trench gates in the substrate, the third and fourth trench gates connecting the first and second trench gates with each other; a first...

03/27/14 - 20140084333 - Power semiconductor device
In general, according to one embodiment, a power semiconductor device includes a first, a second, a third, a fourth, and a fifth electrode, and a first, a second, a third, and a fourth semiconductor layer. The first electrode includes a first and a second face. The first semiconductor layer is...

03/27/14 - 20140084334 - Power semiconductor device
According to one embodiment, a power semiconductor device includes first and second electrodes, first, second, third, and fourth semiconductor layers, a first control electrode, and a first insulating film. The first semiconductor layer is provided on the first electrode. The second semiconductor layer is provided on the first semiconductor layer....

03/20/14 - 20140077253 - Semiconductor device and method of manufacturing the same
A semiconductor device includes a drift layer formed in a semiconductor substrate, and a body layer formed at an upper surface of the semiconductor substrate and located on an upper surface side of the drift layer. The drift layer includes a lifetime control region having a crystal defect density that...

03/20/14 - 20140077254 - Semiconductor device and method of manufacturing same
A semiconductor device includes an element region and an end region, the element region having a semiconductor element formed therein, and the end region surrounding the element region. The semiconductor device includes a semiconductor substrate, a trench, an insulating layer, and a field plate conductive layer. The trench is formed...

03/20/14 - 20140077255 - Semiconductor device
A semiconductor device has semiconducting layers forming a collector layer, a buffer layer, a drift layer, a base layer, and an emitter layer. The drift layer has alternating regions of n-type and p-type semiconductor material arrayed along a first direction. The drift layer further comprises two stacked layers, each stacked...

03/20/14 - 20140077256 - Semiconductor device
A semiconductor device includes a semiconductor layer, a plurality of gate trenches, a gate electrode in the plurality of gate trenches, an n+-type emitter region, a p-type base region, and an n−-type drift region disposed, lateral to each gate trench, a p+-type collector region, a plurality of emitter trenches formed...

03/20/14 - 20140077257 - Semiconductor device
In one embodiment, a semiconductor device includes a semiconductor substrate, a device portion disposed in the semiconductor substrate, and a junction terminal portion disposed in the semiconductor substrate and having an annular shape surrounding the device portion. The junction terminal portion includes first semiconductor regions of a first conductivity type...

03/20/14 - 20140077258 - Semiconductor device
In one embodiment, a semiconductor device includes a semiconductor substrate having first and second main surfaces, control electrodes disposed in trenches on the first main surface of the semiconductor substrate and extending in a first direction parallel to the first main surface, and control interconnects disposed on the first main...

03/20/14 - 20140077259 - Semiconductor device
A carrier is prevented from being stored in a guard ring region in a semiconductor device. The semiconductor device has an IGBT cell including a base region and an emitter region formed in an n− type drift layer, and a p type collector layer arranged under the drift layer with...

03/13/14 - 20140070265 - Fast switching igbt with embedded emitter shorting contacts and method for making same
Integrated circuits are presented having high voltage IGBTs with integral emitter shorts and fabrication processes using wafer bonding or gown epitaxial silicon for controlled drift region thickness and fast switching speed....

03/13/14 - 20140070266 - Power semiconductor device
A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a pair of conductive bodies, a third semiconductor layer of the second conductivity type, and a fourth semiconductor layer of the first conductivity type. The second semiconductor...

03/13/14 - 20140070267 - Power semiconductor device and fabrication method thereof
Provided is a power semiconductor device and a fabrication method thereof are provided. The power semiconductor device includes: a first epitaxial layer; a collector layer formed on one side of the first epitaxial layer; and a second epitaxial layer formed on another side of the first epitaxial layer, the first...

03/13/14 - 20140070268 - Semiconductor device and semiconductor device manufacturing method
In some aspects of the invention, an n-type field-stop layer can have a total impurity of such an extent that a depletion layer spreading in response to an application of a rated voltage stops inside the n-type field-stop layer together with the total impurity of an n− type drift layer....

03/06/14 - 20140061718 - Insulated gate bipolar transistor
There is provided an insulated gate bipolar transistor, including: an active region including a gate electrode, a first emitter metal layer, a first well region, and one portion of a third well region; a termination region including a second well region supporting diffusion of a depletion layer; and a connection...

03/06/14 - 20140061719 - Mos type semiconductor device
A MOS type semiconductor device wherein on voltage is low, the rate of rise of current at turn-on time is low, and it is possible to hold down the rate of rise of collector current at turn-on time, and reduce radiation noise. The device includes a stripe-shaped plan-view pattern of...

02/27/14 - 20140054644 - Semiconductor device
A semiconductor device of the present invention includes a semiconductor layer, a plurality of gate trenches formed in the semiconductor layer, a gate electrode filled via a gate insulating film in the plurality of gate trenches, an n+-type emitter region, a p-type base region, and an n−-type drift region disposed,...

02/27/14 - 20140054645 - Insulated-gate bipolar transistor
In an IGBT, a trench extending in a bent shape to have a corner is formed in an upper surface of a semiconductor substrate. The inside of the trench is covered with an insulating film. A gate is placed inside the trench. An emitter and a collector are formed on...

02/20/14 - 20140048844 - Trench gate type power semiconductor device
Disclosed herein is a trench gate type power semiconductor device including: a semiconductor substrate; a drift layer formed on the semiconductor substrate; a well layer formed on the drift layer; trenches formed to arrive at the drift layer while penetrating through the well layer in a thickness direction; first insulating...

02/20/14 - 20140048845 - Semiconductor device and method for manufacturing the same
Disclosed herein are a semiconductor device and a method for manufacturing the same, the semiconductor device including: trench gate electrodes formed in a semiconductor substrate; a gate insulating film covering an upper surface of the semiconductor substrate and lateral surfaces and lower surfaces of the trench gate electrodes; a base...

02/20/14 - 20140048846 - Self aligned trench mosfet with integrated diode
Transistor devices can be fabricated with an integrated diode using a self-alignment. The device includes a doped semiconductor substrate having one or more electrically insulated gate electrodes formed in trenches in the substrate. One or more body regions are formed in a top portion of the substrate proximate each gate...

02/13/14 - 20140042490 - Nanotube semiconductor devices
Semiconductor devices are formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. In one embodiment, a semiconductor device is formed in a first semiconductor layer having trenches and mesas formed thereon where the trenches extend from the top surface to the bottom surface of the first...

02/06/14 - 20140034997 - Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device
A method for manufacturing a bipolar punch-through semiconductor device is disclosed, which includes providing a wafer having a first and a second side, wherein on the first side a high-doped layer of the first conductivity type having constant high doping concentration is arranged; epitaxially growing a low-doped layer of the...

02/06/14 - 20140034998 - Semiconductor device with laterally varying doping concentrations
A semiconductor device includes a semiconductor body including a first surface having a normal direction defining a vertical direction, a first n-type semiconductor region arranged below the first surface and having a first maximum doping concentration and a second n-type semiconductor region arranged below the first n-type semiconductor region and...

01/30/14 - 20140027812 - Semiconductor device including a dielectric structure in a trench
A semiconductor device includes a trench extending into a drift zone of a semiconductor body from a first surface. The semiconductor device further includes a gate electrode in the trench and a body region adjoining a sidewall of the trench. The semiconductor device further includes a dielectric structure in the...

01/30/14 - 20140027813 - Method of forming a semiconductor device having a patterned gate dielectric and structure therefor
In one embodiment, a semiconductor device includes an isolated trench-electrode structure. The semiconductor device is formed using a modified photolithographic process to produce alternating regions of thick and thin dielectric layers that separate the trench electrode from regions of the semiconductor device. The thin dielectric layers can be configured to...

01/30/14 - 20140027814 - Power device and a reverse conducting power igbt
A semiconductor device is provided which includes a semiconductor body having a base region and a main horizontal surface, and a first electrode arranged on the main horizontal surface. The semiconductor body further includes a plurality of vertical trenches having gate electrodes in a vertical cross-section. A body region forms...

01/16/14 - 20140015003 - Semiconductor device and method for manufacturing semiconductor device
Disclosed herein are a semiconductor device, and a method for manufacturing the semiconductor device. The semiconductor device includes a semiconductor substrate, a base region formed on an upper region of an inside of the semiconductor substrate, at least one gate electrode that penetrates through the base region and has an...

01/16/14 - 20140015004 - Semiconductor device
On a main surface of a semiconductor substrate, an N− semiconductor layer is formed with a dielectric portion including relatively thin and thick portions interposed therebetween. In a predetermined region of the N− semiconductor layer, an N-type impurity region and a P-type impurity region are formed. A gate electrode is...

01/16/14 - 20140015005 - Single chip igniter and internal combustion engine ignition device
Aspects of the invention are directed to a single chip igniter such that it is possible to realize a reduction in operating voltage, an increase in noise tolerance, a reduction in size, and a reduction in cost. By reducing the gate threshold voltage of a MOS transistor, and reducing the...

01/16/14 - 20140015006 - Semiconductor device and method for manufacturing same
An N type well (NW) is formed over a prescribed depth from a main surface of a semiconductor substrate (SUB), and a P type well (PW) and an N type drain region (ND) are formed in the N type well (NW). An N type source region (NS), an N+ type...

12/26/13 - 20130341673 - Reverse conducting igbt
A semiconductor device includes a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the first conductivity type, and a drift region of the second conductivity type arranged in a semiconductor body. The first and second emitter regions are arranged...

12/19/13 - 20130334565 - Method of manufacturing a semiconductor device using an impurity source containing a metallic recombination element and semiconductor device
Source zones of a first conductivity type and body zones of a second conductivity type are formed in a semiconductor die. The source zones directly adjoin a first surface of the semiconductor die. A dielectric layer adjoins the first surface. Polysilicon plugs extend through the dielectric layer and are electrically...

12/19/13 - 20130334566 - Power semiconductor device and method for manufacturing such a power semiconductor device
An insulated gate bipolar device is disclosed which can include layers of different conductivity types between an emitter electrode on an emitter side and a collector electrode on a collector side in the following order: a source region of a first conductivity type, a base layer of a second conductivity...

12/12/13 - 20130328104 - Semiconductor device and manufacturing method thereof
A semiconductor device is disclosed which has a high voltage isolation structure that is a RESURF structure, wherein it is possible to reduce a displacement current generated by dV/dt noise, and a method of manufacturing the semiconductor device. It is possible to increase a lateral resistance without changing the total...

12/12/13 - 20130328105 - Narrow active cell ie type trench gate igbt and a method for manufacturing a narrow active cell ie type trench gate igbt
In an equal width active cell IE type IGBT, a wide active cell IE type IGBT, and the like, an active cell region is equal in trench width to an inactive cell region, or the trench width of the inactive cell region is narrower. Accordingly, it is relatively easy to...

11/21/13 - 20130307018 - Semiconductor device including first and second semiconductor materials
A semiconductor device includes a first semiconductor region including a first semiconductor material. The semiconductor device further includes a second semiconductor region adjoining the first semiconductor region. The second semiconductor region includes a second semiconductor material different from the first semiconductor material. The semiconductor device further includes a drift or...

11/07/13 - 20130292739 - Power semiconductor module
A power semiconductor module includes a base plate and at least one pair of substrates mounted on the base plate. Multiple power semiconductors are mounted on each substrate. The power semiconductors are arranged on each substrate with a different number of power semiconductors along opposite edges thereof. The at least...

10/24/13 - 20130277710 - Semiconductor component and method for producing it
A semiconductor component having differently structured cell regions, and a method for producing it. For this purpose, the semiconductor component includes a semiconductor body. A first electrode on the top side of the semiconductor body is electrically connected to a first zone near the surface of the semiconductor body. A...

10/03/13 - 20130256744 - Igbt with buried emitter electrode
There are disclosed herein various implementations of an insulated gate bipolar transistor (IGBT) with buried emitter electrodes. Such an IGBT may include a collector at a bottom surface of a semiconductor substrate, a drift region having a first conductivity type situated over the collector, and a base layer having a...

10/03/13 - 20130256745 - Deep gate trench igbt
There are disclosed herein various implementations of an insulated-gate bipolar transistor (IGBT) with buried depletion electrode. Such an IGBT may include a collector at a bottom surface of a semiconductor substrate, a drift region having a first conductivity type situated over the collector, and a base layer having a second...

09/26/13 - 20130248924 - Semiconductor device
A semiconductor device includes a reverse-conducting insulated gate bipolar transistor (IGBT), wherein the thickness of the semiconductor layer underlying the diode region of the device is thinner than the thickness of the semiconductor layer underlying the IGBT portion of the device. In one aspect, the semiconductor layer is a continuous...

09/26/13 - 20130248925 - Power semiconductor device
According to an embodiment, a power semiconductor device includes a semiconductor substrate, a base layer, a device portion, a guard ring, and an insulator. The semiconductor substrate includes a drift layer with a first conductive type. The base layer has a second conductive type and is selectively formed in a...

09/19/13 - 20130240947 - Semiconductor device
A semiconductor device formed on a substrate of a first conductivity type, including a base layer of a second conductivity disposed on a first face of the substrate, an anode layer with a higher dopant amount in a portion of the base layer, an IGBT region formed on the base...

09/12/13 - 20130234200 - Vertical trench igbt and method for manufacturing the same
A method for manufacturing a vertical trench IGBT includes: forming a body layer of a second conductivity type on a semiconductor substrate of a first conductivity type; forming a trench passing through the body layer; forming a trench gate in the trench via a gate insulating film; forming a polysilicon...

09/12/13 - 20130234201 - Field stop structure, reverse conducting igbt semiconductor device and methods for manufacturing the same
A field stop structure is disclosed. The field stop structure is divided into a three-dimensional structure by a plurality of trenches formed on a back side of a silicon substrate and hence obtains a greater formation depth in the substrate and can achieve a higher ion activation efficiency. Moreover, a...

08/29/13 - 20130221401 - Semiconductor device
According to one embodiment, a semiconductor device includes a first electrode, a first conductivity type cathode layer, a first conductivity type base layer, a second conductivity type anode layer, a second conductivity type semiconductor layer, a first conductivity type semiconductor layer, an buried body, and a second electrode. The first...

08/29/13 - 20130221402 - Insulated gate bipolar transistor
An insulated gate bipolar transistor includes a first semiconductor layer of a first conductivity type, a first base layer of a second conductivity type, a second base layer of the second conductivity type, a first emitter layer of the first conductivity type, and a second emitter layer of the first...

08/29/13 - 20130221403 - Semiconductor device and method of manufacturing semiconductor device
A semiconductor device and related method of manufacturing a semiconductor device that has an active region in the inner circumference of a chip with a thickness less than that of the outer circumference of the chip in which a termination structure is provided. An n field stop region, a p...

08/22/13 - 20130214327 - Semiconductor device and method for producing the same
A semiconductor device satisfies the condition Db≦(⅓)×Da, in which Da represents a distance between a top surface of a cathode segment and an end of an embedded gate segment facing an anode segment, and Db represents a distance between a highest-impurity concentration portion in the embedded gate segment and an...