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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Regenerative Type Switching Device (e.g., Scr, Comfet, Thyristor) > J-fet (junction Field Effect Transistor) > With Extended Latchup Current Level (e.g., Comfet Device)

With Extended Latchup Current Level (e.g., Comfet Device)

With Extended Latchup Current Level (e.g., Comfet Device) patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

10/09/14 - 20140299914 - Nanotube semiconductor devices
Semiconductor devices are formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. In one embodiment, a semiconductor device is formed in a second semiconductor layer disposed on a first semiconductor layer of opposite conductivity type and having trenches formed therein where the trenches extend from the...

10/09/14 - 20140299915 - Semiconductor device
In a semiconductor device having a vertical semiconductor element configured to pass an electric current between an upper electrode and a lower electrode, a field stop layer includes a phosphorus/arsenic layer doped with phosphorus or arsenic and a proton layer doped with proton. The phosphorus/arsenic layer is formed from a...

10/02/14 - 20140291722 - Power semiconductor device and method of fabricating the same
There is provided a power semiconductor device, including a plurality of trench gates formed to be spaced apart from each other by a predetermined distance, a current increasing part formed between the trench gates and including a first conductivity-type emitter layer and a gate oxide formed on a surface of...

10/02/14 - 20140291723 - Semiconductor device and method for producing the same
A method of producing a seminconductor device is disclosed in which, after proton implantation is performed, a hydrogen-induced donor is formed by a furnace annealing process to form an n-type field stop layer. A disorder generated in a proton passage region is reduced by a laser annealing process to form...

09/25/14 - 20140284655 - Semiconductor device
A semiconductor device of an embodiment is provided with a normally-off transistor having a first source connected to a source terminal, a first drain, and a first gate connected to a gate terminal and a normally-on transistor having a second source connected to the first drain, a second drain connected...

09/25/14 - 20140284656 - Mos semiconductor device
An MOS semiconductor device including an MOS gate structure is disclosed. The MOS semiconductor device includes a p-type well region selectively disposed on the surface layer of an n-type drift layer formed on a semiconductor substrate forming an n-type drain region; an n-type source region selectively disposed on the surface...

09/25/14 - 20140284657 - Semiconductor device and method for manufacturing semiconductor device
A p anode layer (2) is formed on one main surface of an n− drift layer (1). An n+ cathode layer (3) having an impurity concentration more than that of the n− drift layer (1) is formed on the other main surface of the n− drift layer (1). An anode...

09/18/14 - 20140264432 - Semiconductor device
A semiconductor device in a semiconductor substrate includes a first main surface and a transistor cell. The transistor cell includes a drift region of a first conductivity type, a body region of a second conductivity type between the drift region and the first main surface, an active trench in the...

09/18/14 - 20140264433 - Dual-gate trench igbt with buried floating p-type shield
A method of manufacturing an insulated gate bipolar transistor (IGBT) device comprising 1) preparing a semiconductor substrate with an epitaxial layer of a first conductivity type supported on the semiconductor substrate of a second conductivity type; 2) applying a gate trench mask to open a first trench and second trench...

09/11/14 - 20140252408 - Reverse conducting igbt
A reverse conducting IGBT that includes an insulated gate; a semiconductor layer having a first conductivity type drift region, a second conductivity type body region, a first conductivity type emitter region, and a second conductivity type intermediate region; and an emitter electrode provided on a surface of the semiconductor layer....

08/28/14 - 20140239344 - Power semiconductor device and method of fabricating the same
There is provided a power semiconductor device, including a first conductive type drift layer; a second conductive type body layer formed on the drift layer, a second conductive type collector layer formed below the drift layer; a first gate formed by penetrating through the body layer and a portion of...

08/21/14 - 20140231865 - Insulated gate semiconductor device and method for manufacturing the same
An insulated gate semiconductor device includes a region that is provided between trenches in which a gate electrode is filled through a gate insulating film in a surface layer of a substrate, includes a p base region and an n+ emitter region, and comes into conductive contact with an emitter...

08/21/14 - 20140231866 - Igbt and method of manufacturing the same
An IGBT has an emitter region, a top body region that is formed below the emitter region, a floating region that is formed below the top body region, a bottom body region that is formed below the floating region, a trench, a gate insulating film that covers an inner face...

08/14/14 - 20140225155 - Semiconductor device
A semiconductor device includes: a first semiconductor region; a second semiconductor region, which is arranged on the first semiconductor region; a third semiconductor region, which is arranged on the second semiconductor region; a plurality of fourth semiconductor regions, each of which is arranged with being spaced from each other on...

08/07/14 - 20140217463 - Bipolar semiconductor switch and a manufacturing method therefor
A bipolar semiconductor switch having a semiconductor body is provided. The semiconductor body includes a first p-type semiconductor region, a second p-type semiconductor region, and a first n-type semiconductor region forming a first pn-junction with the first p-type semiconductor region and a second pn-junction with the second p-type semiconductor region....

08/07/14 - 20140217464 - Semiconductor device
In a semiconductor device, a trench gate has a bottom portion in a drift layer and a communication portion extending from a surface of a base layer to communicate with the bottom portion. A distance between adjacent bottom portions is smaller than a distance between adjacent communication portions in a...

07/31/14 - 20140209970 - Semiconductor device including an edge area and method of manufacturing a semiconductor device
A semiconductor portion of a semiconductor device includes a semiconductor layer with a drift zone of a first conductivity type and at least one impurity zone of a second, opposite conductivity type. The impurity zone adjoins a first surface of the semiconductor portion in an element area. A connection layer...

07/31/14 - 20140209971 - Insulated gate bipolar transistor
Embodiments of the present invention provide an IGBT, which relates to the field of integrated circuit manufacturing, and may improve a problem of tail current when the IGBT is turned off. The IGBT includes a cell region on a front surface, a terminal region surrounding the cell region, an IGBT...

07/17/14 - 20140197451 - Semiconductor device
An insulated gate bipolar transistor having a gate electrode (7) and an emitter electrode (9) is provided in a transistor region. A termination region is arranged around the transistor region. A first N type buffer layer (18) is provided below an N type drift layer (1) in the transistor region....

07/17/14 - 20140197452 - Electronic device comprising conductive regions and dummy regions
A device includes an epitaxial region extending into a front surface of a chip. A portion of the chip adjacent the epitaxial region defines a collector. A gate is provided in a trench extending into the epitaxial region from the front surface. An emitter includes a body extending into the...

07/10/14 - 20140191281 - High voltage semiconductor device
An n well region and an n−region surrounding the n well region are provided in the surface layer of a p−silicon substrate. The n−region includes breakdown voltage regions in which high voltage MOSFETs are disposed. The n well region includes a logic circuit region in which a logic circuit is...

06/19/14 - 20140167103 - Semiconductor device and method of manufacturing the same
Disclosed herein is a semiconductor device including a semiconductor substrate, a collector layer formed under the semiconductor substrate, a base layer formed on the semiconductor substrate, an emitter layer formed on the base layer, one or more trench barriers vertically penetrating the base layer and the emitter layer, a first...

06/12/14 - 20140159103 - Partial soi on power device for breakdown voltage improvement
The present disclosure relates to a method and apparatus to increase breakdown voltage of a semiconductor power device. A bonded wafer is formed by bonding a device wafer to a handle wafer with an intermediate oxide layer. The device wafer is thinned substantially from its original thickness. A power device...

06/12/14 - 20140159104 - Semiconductor device
There is provided a semiconductor device including: a first semiconductor region having a first conductivity; a second semiconductor region having a second conductivity and formed on a surface of the first semiconductor region; a third semiconductor region having the first conductivity and formed on a surface of the second semiconductor...

06/12/14 - 20140159105 - Power semiconductor device
Disclosed herein is a power semiconductor device, including: a drift layer formed on the first surface of the semiconductor substrate, a well layer of a first conductive type, formed on the drift layer, a trench formed to reach the drift layer through the well layer, a first electrode formed in...

06/12/14 - 20140159106 - Power semiconductor device and method for manufacturing the same
There is provided a power semiconductor device, including: a first conductive type drift layer, a second conductive type termination layer formed on an upper portion of an edge of the drift layer, and a high concentration first conductive type channel stop layer formed on a side surface of the edge...

06/12/14 - 20140159107 - Semiconductor device
Some aspects of the invention include a trench gate structure including a p base layer, an n+ emitter region, a trench, a gate oxide film, and a doped polysilicon gate electrode is provided in an active region. A p-type extension region formed by extending the p base layer to an...

06/05/14 - 20140151743 - Electrostatic discharge protection device
An electrostatic discharge protection device may include a first conductivity type well, a second conductivity well; a first doping region and a second doping region which are formed in the first conductivity type well and have different conductivity types from each other; a third doping region and a fourth doping...

05/29/14 - 20140145239 - Semiconductor device and manufacturing method of same
A manufacturing method for a semiconductor device including a drift layer; a body layer contacting a front surface of the drift layer; an emitter layer provided on a portion of a front surface of the body layer and exposed on the front surface of the substrate; a buffer layer contacting...

05/29/14 - 20140145240 - Device architecture and method for precision enhancement of vertical semiconductor devices
Improvement of key electrical specifications of vertical semiconductor devices, usually found in the class of devices known as discrete semiconductors, has a direct impact on the performance achievement and power efficiency of the systems in which these devices are used. Imprecise vertical device specifications cause system builders to either screen...

05/22/14 - 20140138736 - Insulated gate bipolar transistor
There is provided an insulated gate bipolar transistor including: a first semiconductor area of a first conductivity type; a second semiconductor area of a second conductivity type formed on one surface of the first semiconductor area; third semiconductor areas of the first conductivity type continuously formed in a length direction...

05/15/14 - 20140131766 - Inhomogenous power semiconductor devices
A power semiconductor device is manufactured by forming a power transistor having a plurality of transistor cells on a semiconductor die, and purposely introducing inhomogeneity into the power transistor so that the number of current filaments in the transistor cells with reduced local current density increases and fewer transient avalanche...

05/08/14 - 20140124829 - Insulated gate bipolar transistor
An IGBT has layers between emitter and collector sides. The layers include a collector layer on the collector side, a drift layer, a base layer of a second conductivity type, a first source region arranged on the base layer towards the emitter side, a trench gate electrode arranged lateral to...

05/08/14 - 20140124830 - Insulated gate bipolar transistor
An IGBT has layers between emitter and collector sides, including a drift layer, a base layer electrically contacting an emitter electrode and completely separated from the drift layer, first and second source regions arranged on the base layer towards the emitter side and electrically contacting the emitter electrode, and first...

05/08/14 - 20140124831 - Insulated gate bipolar transistor
An IGBT has layers between emitter and collector sides. The layers include a drift layer, a base layer electrically contacting an emitter electrode and separated from the drift layer, a first source region arranged on the base layer towards the emitter side and electrically contacting the emitter electrode, and a...

05/01/14 - 20140117405 - Semiconductor device
There is provided a semiconductor device including: a first semiconductor region having a first conductivity type; a second semiconductor region having a second conductivity type and formed on one surface of the first semiconductor region; a third semiconductor region having a first conductivity type and formed on one surface of...

05/01/14 - 20140117406 - Reverse blocking mos semiconductor device and manufacturing method thereof
A reverse blocking IGBT is disclosed in which a lifetime control region formed by helium ion irradiation is selectively provided in a region within a range approximately corresponding to the planar pattern of a p-type base region in the direction along the principal surface of a silicon semiconductor substrate of...

05/01/14 - 20140117407 - Power semiconductor device and method of manufacturing the same
Disclosed herein is a power semiconductor device including: a base substrate having one surface and the other surface and formed of a first conductive type drift layer; a first conductive type diffusion layer formed on one surface of the base substrate and having a concentration higher than that of the...

04/03/14 - 20140091358 - Mct device with base-width-determined latching and non-latching states
Methods and systems for a gate-controlled thyristor which switches between narrow-base operation in the ON state and wide-base operation in the OFF state, and which can only sustain latch-up in the narrow-base ON state....

03/27/14 - 20140084332 - Semiconductor device and method for fabricating the same
According to example embodiments of inventive concepts: a semiconductor device includes: first and second trench gates extending long in one direction in a substrate; third and fourth trench gates in the substrate, the third and fourth trench gates connecting the first and second trench gates with each other; a first...

03/27/14 - 20140084333 - Power semiconductor device
In general, according to one embodiment, a power semiconductor device includes a first, a second, a third, a fourth, and a fifth electrode, and a first, a second, a third, and a fourth semiconductor layer. The first electrode includes a first and a second face. The first semiconductor layer is...

03/27/14 - 20140084334 - Power semiconductor device
According to one embodiment, a power semiconductor device includes first and second electrodes, first, second, third, and fourth semiconductor layers, a first control electrode, and a first insulating film. The first semiconductor layer is provided on the first electrode. The second semiconductor layer is provided on the first semiconductor layer....

03/20/14 - 20140077253 - Semiconductor device and method of manufacturing the same
A semiconductor device includes a drift layer formed in a semiconductor substrate, and a body layer formed at an upper surface of the semiconductor substrate and located on an upper surface side of the drift layer. The drift layer includes a lifetime control region having a crystal defect density that...

03/20/14 - 20140077254 - Semiconductor device and method of manufacturing same
A semiconductor device includes an element region and an end region, the element region having a semiconductor element formed therein, and the end region surrounding the element region. The semiconductor device includes a semiconductor substrate, a trench, an insulating layer, and a field plate conductive layer. The trench is formed...

03/20/14 - 20140077255 - Semiconductor device
A semiconductor device has semiconducting layers forming a collector layer, a buffer layer, a drift layer, a base layer, and an emitter layer. The drift layer has alternating regions of n-type and p-type semiconductor material arrayed along a first direction. The drift layer further comprises two stacked layers, each stacked...

03/20/14 - 20140077256 - Semiconductor device
A semiconductor device includes a semiconductor layer, a plurality of gate trenches, a gate electrode in the plurality of gate trenches, an n+-type emitter region, a p-type base region, and an n−-type drift region disposed, lateral to each gate trench, a p+-type collector region, a plurality of emitter trenches formed...

03/20/14 - 20140077257 - Semiconductor device
In one embodiment, a semiconductor device includes a semiconductor substrate, a device portion disposed in the semiconductor substrate, and a junction terminal portion disposed in the semiconductor substrate and having an annular shape surrounding the device portion. The junction terminal portion includes first semiconductor regions of a first conductivity type...

03/20/14 - 20140077258 - Semiconductor device
In one embodiment, a semiconductor device includes a semiconductor substrate having first and second main surfaces, control electrodes disposed in trenches on the first main surface of the semiconductor substrate and extending in a first direction parallel to the first main surface, and control interconnects disposed on the first main...

03/20/14 - 20140077259 - Semiconductor device
A carrier is prevented from being stored in a guard ring region in a semiconductor device. The semiconductor device has an IGBT cell including a base region and an emitter region formed in an n− type drift layer, and a p type collector layer arranged under the drift layer with...

03/13/14 - 20140070265 - Fast switching igbt with embedded emitter shorting contacts and method for making same
Integrated circuits are presented having high voltage IGBTs with integral emitter shorts and fabrication processes using wafer bonding or gown epitaxial silicon for controlled drift region thickness and fast switching speed....

03/13/14 - 20140070266 - Power semiconductor device
A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a pair of conductive bodies, a third semiconductor layer of the second conductivity type, and a fourth semiconductor layer of the first conductivity type. The second semiconductor...

03/13/14 - 20140070267 - Power semiconductor device and fabrication method thereof
Provided is a power semiconductor device and a fabrication method thereof are provided. The power semiconductor device includes: a first epitaxial layer; a collector layer formed on one side of the first epitaxial layer; and a second epitaxial layer formed on another side of the first epitaxial layer, the first...

03/13/14 - 20140070268 - Semiconductor device and semiconductor device manufacturing method
In some aspects of the invention, an n-type field-stop layer can have a total impurity of such an extent that a depletion layer spreading in response to an application of a rated voltage stops inside the n-type field-stop layer together with the total impurity of an n− type drift layer....