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With Extended Latchup Current Level (e.g., Comfet Device)

With Extended Latchup Current Level (e.g., Comfet Device) patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

Related Categories:

Active Solid-state Devices (e.g., Transistors, Solid-state Diodes)


Regenerative Type Switching Device (e.g., Scr, Comfet, Thyristor) > J-fet (junction Field Effect Transistor) > With Extended Latchup Current Level (e.g., Comfet Device)



Insulated gate bipolar transistor with high emitter gate capacitance
01/29/15 - 20150028382 - An IGBT is disclosed with a high emitter-gate capacitance, wherein an active cell region can include plural emitter and gate regions. A termination edge region can include a varied lateral doping region VLD. Each gate polysilicon layer can be arranged at a surface of the semiconductor substrate in the gate...

Semiconductor device
01/22/15 - 20150021655 - A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type on the first semiconductor region, a third semiconductor region of the first conductivity type on the second semiconductor region, a control electrode disposed within and insulated from the...

Semiconductor device
01/22/15 - 20150021656 - According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a first control electrode, a first electrode, a second control electrode, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a first insulating...

Semiconductor device
01/22/15 - 20150021657 - According to one embodiment, a semiconductor device includes: first and second electrodes; a first semiconductor region being in ohmic contact with the first electrode; a second semiconductor region being in contact with the first semiconductor region and the first electrode, and the second semiconductor region having a lower impurity concentration...

Semiconductor device
01/15/15 - 20150014741 - A semiconductor device includes a semiconductor substrate in which an active region and an edge termination region are defined, a semiconductor element formed in the active region, and first to fourth P layers formed in a region spanning from an edge portion of the active region to the edge termination...

Semiconductor device and production method for semiconductor device
01/15/15 - 20150014742 - Depth of a termination p base region provided in a termination portion of an active region close to an edge termination structure portion is more than depth of a p-type base region provided inside the termination p base region. An n-type high-concentration region is provided from one main surface of...

Igbt having an emitter region with first and second doping regions
01/08/15 - 20150008477 - An IGBT includes a semiconductor substrate, a source metallization and an emitter metallization. The semiconductor substrate includes a source region of a first conductivity type, a body region of a second conductivity type, a drift region of the first conductivity type, and an emitter region of the second conductivity type....

Semiconductor device and manufacturing method of the same
01/08/15 - 20150008478 - A manufacturing method of a semiconductor device includes applying at least one of a particle ray and a radial ray to a surface of a semiconductor substrate on which a transistor including a gate insulation film and a gate electrode has been formed adjacent to the surface, and annealing the...

Igbt and igbt manufacturing method
01/08/15 - 20150008479 - An IGBT manufacturing method is provided. The IGBT has an n-type emitter region, a p-type top body region, an n-type intermediate region, a p-type bottom body region, an n-type drift region, a p-type collector region, trenches penetrating the emitter region, the top body region, the intermediate region and the bottom...

Semiconductor component
01/08/15 - 20150008480 - A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and at least one zone of a second conduction type in a rear side. A drift zone of the first conduction type in the cell...

Power semiconductor device and method of manufacturing the same
01/01/15 - 20150001578 - In a general aspect, a power semiconductor device can include a substrate having a first surface and a second surface. The substrate can include at least one uneven portion defined on the second surface. The device can include a gate electrode and an emitter electrode disposed on the first surface...

Semiconductor device
12/25/14 - 20140374791 - A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region having a second conductivity type, a first insulating layer on the first and second semiconductor regions, and field plate electrodes are provided in the first insulating layer at different distances from the first...

Method for manufacturing a vertical bipolar transistor compatible with cmos manufacturing methods
12/25/14 - 20140374792 - The present disclosure relates to a method for manufacturing a bipolar transistor, the method comprising steps of: forming a trench to isolate a first region from a second region in a semiconductor wafer, and to isolate these regions from the rest of the wafer, forming a first P-doped well, in...

Manufacturing method for semiconductor device
12/25/14 - 20140374793 - A p+ collector layer is provided in a rear surface of a semiconductor substrate which will be an n− drift layer and an n+ field stop layer is provided in a region which is deeper than the p+ collector layer formed on the rear surface side. A front surface element...

Power semiconductor with a si chip and a wideband chip having matched loss and area ratios
12/25/14 - 20140374794 - A power semiconductor apparatus which is provided with a first power semiconductor device using Si as a base substance and a second power semiconductor device using a semiconductor having an energy bandgap wider than the energy bandgap of Si as a base substance, and includes a first insulated metal substrate...

Semiconductor device and method of manufacturing semiconductor device
12/18/14 - 20140367737 - A semiconductor device includes a substrate of a first conductivity type, a first impurity region of a second conductivity type formed on a top surface side of the substrate, a second impurity region of the second conductivity type formed on the top surface side of the substrate and in contact...

Semiconductor device
11/27/14 - 20140346561 - In a semiconductor substrate of a semiconductor device, a drift layer, a body layer, an emitter layer, and a trench gate electrode are formed. When the semiconductor substrate is viewed in a plane manner, the semiconductor substrate is divided into a first region covered with a heat dissipation member, and...

Trench insulated-gate bipolar transistor and manufacture method thereof
11/27/14 - 20140346562 - A Trench Insulated Gate Bipolar Transistor (IGBT) and a manufacture method thereof are provided by the present invention, which belongs to the field of IGBT technical field. The manufacture method includes following steps: (1) preparing a semiconductor substrate; (2) forming an epitaxial layer grow on a first side of the...

Semiconductor device
11/20/14 - 20140339599 - A semiconductor device includes a first gate electrode that is provided on a first insulating film along one side wall of a first trench and is provided in a second trench, a shield electrode that is provided on a second insulating film along the other side wall of the first...

Semiconductor device
11/20/14 - 20140339600 - A trench gate MOS structure is provided on one main surface of a semiconductor substrate which will be an n− drift region. An n shell region is provided in the n− drift region so that it contacts a surface of a p base region close to the n− drift region...

A process method and structure for high voltage mosfets
11/13/14 - 20140332844 - This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches each having a trench endpoint with an endpoint sidewall perpendicular to a longitudinal direction of the trench and extends vertically downward from a top surface to a trench bottom...

Topside structures for an insulated gate bipolar transistor (igbt) device to achieve improved device perforemances
11/13/14 - 20140332845 - This invention discloses an insulated gate bipolar transistor (IGBT) device formed in a semiconductor substrate. The IGBT device has a split-shielded trench gate that includes an upper gate segment and a lower shield segment. The IGBT device may further include a dummy trench filled with a dielectric layer disposed at...

Transistor-type protection device, semiconductor integrated circuit, and manufacturing method of the same
11/13/14 - 20140332846 - A transistor-type protection device includes: a semiconductor substrate; a well including a first-conductivity-type semiconductor formed in the semiconductor substrate; a source region including a second-conductivity-type semiconductor formed in the well; a gate electrode formed above the well via a gate insulating film at one side of the source region; a...

Trench type power transistor device
11/06/14 - 20140327039 - The present invention provides a trench type power transistor device including a substrate, an epitaxial layer, a doped diffusion region, a doped source region, and a gate structure. The substrate, the doped diffusion region, and the doped source region have a first conductivity type, and the substrate has an active...

Power semiconductor device
11/06/14 - 20140327040 - Provided is a power semiconductor device including a semiconductor substrate, in which a current flows in a thickness direction of the semiconductor substrate. The semiconductor substrate includes a resistance control structure configured so that a resistance to the current becomes higher in a central portion of the semiconductor substrate than...

Semiconductor device
10/30/14 - 20140319577 - A semiconductor device disclosed in this specification includes a p+ contact region, an n+ source region, a p− base region, an n− drift region, a gate electrode, an insulator, a p+ electric field alleviating layer, and a p− positive hole extraction region. The electric field alleviating layer has same impurity...

Insulated gate bipolar transistor
10/30/14 - 20140319578 - A semiconductor body of an IGBT includes: a first base region of a second conductivity type; a source region of a first conductivity type different from the second conductivity type and forming a first pn-junction with the first base region; a drift region of the first conductivity type and forming...

Power device and method of manufacturing the same
10/23/14 - 20140312382 - Provided are a power device having an improved field stop layer and a method of manufacturing the same. The power device includes: a first field stop layer formed of a semiconductor substrate and of a first conductive type; a second field stop layer formed on the first field stop layer...

Power semiconductor device and method of manufacturing the same
10/23/14 - 20140312383 - A power semiconductor device may include: abase substrate including a first conductive type drift layer; a second conductive type semiconductor substrate disposed on the other surface of the base substrate; a first conductive type diffusion layer disposed in the base substrate and having an impurity concentration higher than that of...

Nanotube semiconductor devices
10/09/14 - 20140299914 - Semiconductor devices are formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. In one embodiment, a semiconductor device is formed in a second semiconductor layer disposed on a first semiconductor layer of opposite conductivity type and having trenches formed therein where the trenches extend from the...

Semiconductor device
10/09/14 - 20140299915 - In a semiconductor device having a vertical semiconductor element configured to pass an electric current between an upper electrode and a lower electrode, a field stop layer includes a phosphorus/arsenic layer doped with phosphorus or arsenic and a proton layer doped with proton. The phosphorus/arsenic layer is formed from a...

Power semiconductor device and method of fabricating the same
10/02/14 - 20140291722 - There is provided a power semiconductor device, including a plurality of trench gates formed to be spaced apart from each other by a predetermined distance, a current increasing part formed between the trench gates and including a first conductivity-type emitter layer and a gate oxide formed on a surface of...

Semiconductor device and method for producing the same
10/02/14 - 20140291723 - A method of producing a seminconductor device is disclosed in which, after proton implantation is performed, a hydrogen-induced donor is formed by a furnace annealing process to form an n-type field stop layer. A disorder generated in a proton passage region is reduced by a laser annealing process to form...

Semiconductor device
09/25/14 - 20140284655 - A semiconductor device of an embodiment is provided with a normally-off transistor having a first source connected to a source terminal, a first drain, and a first gate connected to a gate terminal and a normally-on transistor having a second source connected to the first drain, a second drain connected...

Mos semiconductor device
09/25/14 - 20140284656 - An MOS semiconductor device including an MOS gate structure is disclosed. The MOS semiconductor device includes a p-type well region selectively disposed on the surface layer of an n-type drift layer formed on a semiconductor substrate forming an n-type drain region; an n-type source region selectively disposed on the surface...

Semiconductor device and method for manufacturing semiconductor device
09/25/14 - 20140284657 - A p anode layer (2) is formed on one main surface of an n− drift layer (1). An n+ cathode layer (3) having an impurity concentration more than that of the n− drift layer (1) is formed on the other main surface of the n− drift layer (1). An anode...

Semiconductor device
09/18/14 - 20140264432 - A semiconductor device in a semiconductor substrate includes a first main surface and a transistor cell. The transistor cell includes a drift region of a first conductivity type, a body region of a second conductivity type between the drift region and the first main surface, an active trench in the...

Dual-gate trench igbt with buried floating p-type shield
09/18/14 - 20140264433 - A method of manufacturing an insulated gate bipolar transistor (IGBT) device comprising 1) preparing a semiconductor substrate with an epitaxial layer of a first conductivity type supported on the semiconductor substrate of a second conductivity type; 2) applying a gate trench mask to open a first trench and second trench...

Reverse conducting igbt
09/11/14 - 20140252408 - A reverse conducting IGBT that includes an insulated gate; a semiconductor layer having a first conductivity type drift region, a second conductivity type body region, a first conductivity type emitter region, and a second conductivity type intermediate region; and an emitter electrode provided on a surface of the semiconductor layer....

Power semiconductor device and method of fabricating the same
08/28/14 - 20140239344 - There is provided a power semiconductor device, including a first conductive type drift layer; a second conductive type body layer formed on the drift layer, a second conductive type collector layer formed below the drift layer; a first gate formed by penetrating through the body layer and a portion of...

Insulated gate semiconductor device and method for manufacturing the same
08/21/14 - 20140231865 - An insulated gate semiconductor device includes a region that is provided between trenches in which a gate electrode is filled through a gate insulating film in a surface layer of a substrate, includes a p base region and an n+ emitter region, and comes into conductive contact with an emitter...

Igbt and method of manufacturing the same
08/21/14 - 20140231866 - An IGBT has an emitter region, a top body region that is formed below the emitter region, a floating region that is formed below the top body region, a bottom body region that is formed below the floating region, a trench, a gate insulating film that covers an inner face...

Semiconductor device
08/14/14 - 20140225155 - A semiconductor device includes: a first semiconductor region; a second semiconductor region, which is arranged on the first semiconductor region; a third semiconductor region, which is arranged on the second semiconductor region; a plurality of fourth semiconductor regions, each of which is arranged with being spaced from each other on...

Bipolar semiconductor switch and a manufacturing method therefor
08/07/14 - 20140217463 - A bipolar semiconductor switch having a semiconductor body is provided. The semiconductor body includes a first p-type semiconductor region, a second p-type semiconductor region, and a first n-type semiconductor region forming a first pn-junction with the first p-type semiconductor region and a second pn-junction with the second p-type semiconductor region....

Semiconductor device
08/07/14 - 20140217464 - In a semiconductor device, a trench gate has a bottom portion in a drift layer and a communication portion extending from a surface of a base layer to communicate with the bottom portion. A distance between adjacent bottom portions is smaller than a distance between adjacent communication portions in a...

Semiconductor device including an edge area and method of manufacturing a semiconductor device
07/31/14 - 20140209970 - A semiconductor portion of a semiconductor device includes a semiconductor layer with a drift zone of a first conductivity type and at least one impurity zone of a second, opposite conductivity type. The impurity zone adjoins a first surface of the semiconductor portion in an element area. A connection layer...

Insulated gate bipolar transistor
07/31/14 - 20140209971 - Embodiments of the present invention provide an IGBT, which relates to the field of integrated circuit manufacturing, and may improve a problem of tail current when the IGBT is turned off. The IGBT includes a cell region on a front surface, a terminal region surrounding the cell region, an IGBT...

Semiconductor device
07/17/14 - 20140197451 - An insulated gate bipolar transistor having a gate electrode (7) and an emitter electrode (9) is provided in a transistor region. A termination region is arranged around the transistor region. A first N type buffer layer (18) is provided below an N type drift layer (1) in the transistor region....

Electronic device comprising conductive regions and dummy regions
07/17/14 - 20140197452 - A device includes an epitaxial region extending into a front surface of a chip. A portion of the chip adjacent the epitaxial region defines a collector. A gate is provided in a trench extending into the epitaxial region from the front surface. An emitter includes a body extending into the...

High voltage semiconductor device
07/10/14 - 20140191281 - An n well region and an n−region surrounding the n well region are provided in the surface layer of a p−silicon substrate. The n−region includes breakdown voltage regions in which high voltage MOSFETs are disposed. The n well region includes a logic circuit region in which a logic circuit is...

Semiconductor device and method of manufacturing the same
06/19/14 - 20140167103 - Disclosed herein is a semiconductor device including a semiconductor substrate, a collector layer formed under the semiconductor substrate, a base layer formed on the semiconductor substrate, an emitter layer formed on the base layer, one or more trench barriers vertically penetrating the base layer and the emitter layer, a first...

Partial soi on power device for breakdown voltage improvement
06/12/14 - 20140159103 - The present disclosure relates to a method and apparatus to increase breakdown voltage of a semiconductor power device. A bonded wafer is formed by bonding a device wafer to a handle wafer with an intermediate oxide layer. The device wafer is thinned substantially from its original thickness. A power device...

Semiconductor device
06/12/14 - 20140159104 - There is provided a semiconductor device including: a first semiconductor region having a first conductivity; a second semiconductor region having a second conductivity and formed on a surface of the first semiconductor region; a third semiconductor region having the first conductivity and formed on a surface of the second semiconductor...

Power semiconductor device
06/12/14 - 20140159105 - Disclosed herein is a power semiconductor device, including: a drift layer formed on the first surface of the semiconductor substrate, a well layer of a first conductive type, formed on the drift layer, a trench formed to reach the drift layer through the well layer, a first electrode formed in...

Power semiconductor device and method for manufacturing the same
06/12/14 - 20140159106 - There is provided a power semiconductor device, including: a first conductive type drift layer, a second conductive type termination layer formed on an upper portion of an edge of the drift layer, and a high concentration first conductive type channel stop layer formed on a side surface of the edge...

Semiconductor device
06/12/14 - 20140159107 - Some aspects of the invention include a trench gate structure including a p base layer, an n+ emitter region, a trench, a gate oxide film, and a doped polysilicon gate electrode is provided in an active region. A p-type extension region formed by extending the p base layer to an...

Electrostatic discharge protection device
06/05/14 - 20140151743 - An electrostatic discharge protection device may include a first conductivity type well, a second conductivity well; a first doping region and a second doping region which are formed in the first conductivity type well and have different conductivity types from each other; a third doping region and a fourth doping...

Semiconductor device and manufacturing method of same
05/29/14 - 20140145239 - A manufacturing method for a semiconductor device including a drift layer; a body layer contacting a front surface of the drift layer; an emitter layer provided on a portion of a front surface of the body layer and exposed on the front surface of the substrate; a buffer layer contacting...

Device architecture and method for precision enhancement of vertical semiconductor devices
05/29/14 - 20140145240 - Improvement of key electrical specifications of vertical semiconductor devices, usually found in the class of devices known as discrete semiconductors, has a direct impact on the performance achievement and power efficiency of the systems in which these devices are used. Imprecise vertical device specifications cause system builders to either screen...

Insulated gate bipolar transistor
05/22/14 - 20140138736 - There is provided an insulated gate bipolar transistor including: a first semiconductor area of a first conductivity type; a second semiconductor area of a second conductivity type formed on one surface of the first semiconductor area; third semiconductor areas of the first conductivity type continuously formed in a length direction...

Inhomogenous power semiconductor devices
05/15/14 - 20140131766 - A power semiconductor device is manufactured by forming a power transistor having a plurality of transistor cells on a semiconductor die, and purposely introducing inhomogeneity into the power transistor so that the number of current filaments in the transistor cells with reduced local current density increases and fewer transient avalanche...

Insulated gate bipolar transistor
05/08/14 - 20140124829 - An IGBT has layers between emitter and collector sides. The layers include a collector layer on the collector side, a drift layer, a base layer of a second conductivity type, a first source region arranged on the base layer towards the emitter side, a trench gate electrode arranged lateral to...

Insulated gate bipolar transistor
05/08/14 - 20140124830 - An IGBT has layers between emitter and collector sides, including a drift layer, a base layer electrically contacting an emitter electrode and completely separated from the drift layer, first and second source regions arranged on the base layer towards the emitter side and electrically contacting the emitter electrode, and first...

Insulated gate bipolar transistor
05/08/14 - 20140124831 - An IGBT has layers between emitter and collector sides. The layers include a drift layer, a base layer electrically contacting an emitter electrode and separated from the drift layer, a first source region arranged on the base layer towards the emitter side and electrically contacting the emitter electrode, and a...

Semiconductor device
05/01/14 - 20140117405 - There is provided a semiconductor device including: a first semiconductor region having a first conductivity type; a second semiconductor region having a second conductivity type and formed on one surface of the first semiconductor region; a third semiconductor region having a first conductivity type and formed on one surface of...

Reverse blocking mos semiconductor device and manufacturing method thereof
05/01/14 - 20140117406 - A reverse blocking IGBT is disclosed in which a lifetime control region formed by helium ion irradiation is selectively provided in a region within a range approximately corresponding to the planar pattern of a p-type base region in the direction along the principal surface of a silicon semiconductor substrate of...

Power semiconductor device and method of manufacturing the same
05/01/14 - 20140117407 - Disclosed herein is a power semiconductor device including: a base substrate having one surface and the other surface and formed of a first conductive type drift layer; a first conductive type diffusion layer formed on one surface of the base substrate and having a concentration higher than that of the...

Mct device with base-width-determined latching and non-latching states
04/03/14 - 20140091358 - Methods and systems for a gate-controlled thyristor which switches between narrow-base operation in the ON state and wide-base operation in the OFF state, and which can only sustain latch-up in the narrow-base ON state....

Semiconductor device and method for fabricating the same
03/27/14 - 20140084332 - According to example embodiments of inventive concepts: a semiconductor device includes: first and second trench gates extending long in one direction in a substrate; third and fourth trench gates in the substrate, the third and fourth trench gates connecting the first and second trench gates with each other; a first...

Power semiconductor device
03/27/14 - 20140084333 - In general, according to one embodiment, a power semiconductor device includes a first, a second, a third, a fourth, and a fifth electrode, and a first, a second, a third, and a fourth semiconductor layer. The first electrode includes a first and a second face. The first semiconductor layer is...

Power semiconductor device
03/27/14 - 20140084334 - According to one embodiment, a power semiconductor device includes first and second electrodes, first, second, third, and fourth semiconductor layers, a first control electrode, and a first insulating film. The first semiconductor layer is provided on the first electrode. The second semiconductor layer is provided on the first semiconductor layer....