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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Regenerative Type Switching Device (e.g., Scr, Comfet, Thyristor) > J-fet (junction Field Effect Transistor) J-fet (junction Field Effect Transistor)J-fet (junction Field Effect Transistor) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.05/03/07 - 20070096145 - Switching semiconductor devices and fabrication process A switching semiconductor device is provided, in which a negative gate voltage can be applied to the semiconductor device in an OFF state so as to increase a breakdown voltage of the gate junction without impairing a normally-off function of the semiconductor device and the ON-resistance. The switching semiconductor device ... 05/03/07 - 20070096144 - Integrated circuit using complementary junction field effect transistor and mos transistor in silicon and silicon alloys This invention describes a method of building complementary logic circuits using junction field effect transistors in silicon. This invention is ideally suited for deep submicron dimensions, preferably below 65 nm. The basis of this invention is a complementary Junction Field Effect Transistor which is operated in the enhancement mode. The ... 04/05/07 - 20070075330 - Composite semiconductor device, print head and image forming apparatus A semiconductor device includes a light-emitting layer of a first conductivity type, a second conductivity type or non-doped type, a first contact layer of the second conductivity type disposed on the light-emitting layer and supplied with a voltage via a predetermined contact, a second contact layer of the second conductivity ... 01/18/07 - 20070012946 - Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain layers can be epitaxially grown. The ohmic contacts ... 11/16/06 - 20060255360 - Semiconductor device having multiple lateral channels and method of forming the same A semiconductor device having multiple lateral channels with contacts on opposing surfaces thereof and a method of forming the same. In one embodiment, the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes a first ... 07/13/06 - 20060151804 - Versatile system for cross-lateral junction field effect transisor The present invention provides a system for providing a cross-lateral junction field effect transistor (114) having desired high-performance desired voltage, frequency or current characteristics. The cross-lateral transistor is formed on a commercial semiconductor substrate (102). A channel structure (124) is formed along the substrate, having source (120) and drain (122) ... 06/08/06 - 20060118813 - Lateral junction field-effect transistor A lateral JFET has a basic structure including an n-type semiconductor layer (3) formed of an n-type impurity region and a p-type semiconductor layer formed of a p-type impurity region on the n-type semiconductor layer (3). Moreover, in the p-type semiconductor layer, there are provided a p+-type gate region layer ... 06/01/06 - 20060113561 - Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain layers can be epitaxially grown. The ohmic contacts ... 11/10/05 - 20050247955 - Implant-controlled-channel vertical jfet We disclose the structure of an electronic device, the method of making the device and the operation of the device. The device is built near the top of a substrate. It has, near the top surface, a buried layer that is electrically communicable to a drain terminal. The device has ... 08/11/05 - 20050173726 - Normally off jfet A normally off JFET is formed by the implantation of a P base; and a shallower P island atop the P base, forming a narrow lateral conduction channel between the two and a shallow gate implant in the device top surface which forms a second lateral conduction channel with the ... 08/04/05 - 20050167695 - Semiconductor device containing dielectrically isolated pn junction for enhanced breakdown characteristics A semiconductor device includes a field shield region that is doped opposite to the conductivity of the substrate and is bounded laterally by dielectric sidewall spacers and from below by a PN junction. For example, in a trench-gated MOSFET the field shield region may be located beneath the trench and ... 07/14/05 - 20050151158 - Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same A silicon carbide semiconductor device includes: a semiconductor substrate including a base substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer, which are laminated in this order; a cell portion disposed in the semiconductor substrate and providing an electric part forming portion; and a periphery ... 06/30/05 - 20050139859 - Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same A silicon carbide semiconductor device includes a substrate and a junction field effect transistor. The transistor includes: a first semiconductor layer disposed on the substrate; a first gate layer disposed on a surface of the first semiconductor layer; a first channel layer adjacent to the first gate layer on the ... ### FreshPatents.com Support |