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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Regenerative Type Switching Device (e.g., Scr, Comfet, Thyristor) > Combined With Field Effect Transistor Combined With Field Effect TransistorCombined With Field Effect Transistor patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/17/08 - 20080012040 - Semiconductor devices The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region (52) whose potential is floating is formed within a p− type body region (28). The n ... 07/26/07 - 20070170461 - Gallium nitride-based compound semiconductor light-emitting device An object of the present invention is to provide a gallium nitride compound semiconductor light-emitting device having a positive electrode that exhibits low contact resistance with a p-type gallium nitride compound semiconductor layer and that can be fabricated with high productivity. The inventive gallium nitride compound semiconductor light-emitting device includes ... 06/28/07 - 20070145409 - Five channel fin transistor and method for fabricating the same A semiconductor device comprises a substrate defining a recessed active region; a fin active region connected to the recessed active region and extending above the recessed active region. The fin active region includes first, second, third, fourth, and fifth sides, the first and second sides being proximate the recessed active ... 05/24/07 - 20070114565 - Integrated field-effect transistor-thyristor device An integrated FET-thyristor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of a second conductivity type formed in the substrate proximate an upper surface of the substrate, and a second semiconductor region of the second conductivity type formed in the substrate proximate a bottom ... 05/17/07 - 20070108468 - Semiconductor device and method of manufacturing the same A semiconductor device, including: a semiconductor substrate of a first conductivity type having a first and second major surfaces; a first conductivity type semiconductor layer formed on the first major surface of the semiconductor substrate; a base layer of a second conductivity type formed on the first major surface of ... 03/22/07 - 20070063217 - Bonded-wafer superjunction semiconductor device A bonded-wafer semiconductor device includes a semiconductor substrate, a buried oxide layer disposed on a first main surface of the semiconductor substrate and a multi-layer device stack. The multi-layer device stack includes a first device layer of a first conductivity disposed on the buried oxide layer, a second device layer ... 03/15/07 - 20070057282 - Semiconductor light-emitting device A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity type layer; and a second conductivity type layer formed on the ... 03/15/07 - 20070057281 - Method of fabricating an integrated circuit with gate self-protection, and an integrated circuit with gate self-protection An integrated circuit with gate self-protection comprises a MOS device and a bipolar device, wherein the integrated circuit further comprises a semiconductor layer with electrically active regions in which and on which the MOS device and the bipolar device are formed and electrically inactive regions for isolating the electrically active ... 03/01/07 - 20070045657 - Semiconductor substrate, semiconductor device, manufacturing method thereof, and method for designing semiconductor substrate A semiconductor substrate, includes: a capacitance-adjusting semiconductor layer which is disposed in a predetermined region on a semiconductor substrate material and which is sufficiently thick and has a lower impurity density than that of the semiconductor substrate material; a first insulation film disposed on the capacitance-adjusting semiconductor layer; and a ... 02/22/07 - 20070040185 - Semiconductor device and capacitance regulation circuit According to an embodiment of the invention, there is provided a semiconductor device comprising: a semiconductor element having a first main electrode, a second main electrode and a control electrode, a current flowing between the first and second main electrodes being controlled by a control signal which is input between ... 02/22/07 - 20070040184 - Semiconductor device and capacitance regulation circuit According to an embodiment of the invention, there is provided a semiconductor device comprising: a semiconductor element having a first main electrode, a second main electrode and a control electrode, a current flowing between the first and second main electrodes being controlled by a control signal which is input between ... 01/25/07 - 20070018194 - Driving circuit When a PWM command signal reaches a low level, an input transistor turns on, an on-driving transistor turns off, Darlington-connected off-driving transistors connected in series with the on-driving transistor turn on, and an output MOSFET changes from an on-state to an off-state. At this time, a base current of the ... 11/02/06 - 20060244007 - High-performance one-transistor memory cell One aspect of this disclosure relates to a memory cell. In various embodiments, the memory cell includes an access transistor having a floating node, and a diode connected between the floating node and a diode reference potential line. The diode includes an anode, a cathode, and an intrinsic region between ... 09/28/06 - 20060214185 - Horizontal tram An integrated circuit structure includes providing a semiconductor substrate and forming a trench therein. A thyristor is formed around the trench and within the semiconductor substrate. The thyristor has at least four layers with three P-N junctions therebetween. A gate for the thyristor is formed within the trench. An access ... 07/06/06 - 20060145185 - Ldmos gate controlled schottky diode An improved diode is disclosed. The diode comprises a Schottky diode and a LDMOS device coupled in series with the Schottky diode. In a preferred embodiment, a forward current from the Schottky diode is allowed to flow through the channel of a depletion mode LDMOS that allows gate control over ... 04/06/06 - 20060071237 - Circuit arrangement comprising a power component and a drive circuit integrated in two semiconductor bodies A circuit arrangement comprises at least one power component and a drive circuit for the power component, which are integrated in a first and a second semiconductor chip. Only CMOS components of the drive circuit or CMOS components, capacitive components and resistance components of the drive circuit are integrated in ... 04/06/06 - 20060071236 - Integrated circuit The invention relates to an integrated circuit having a semiconductor component (10) comprising a first p-type region (12) and a first n-type region (11) adjoining the first p-type region (12), which together form a first pn junction having a breakdown voltage. According to the invention, a further n-type region adjoining ... 03/23/06 - 20060060884 - Semiconductor devices A silicon carbide semiconductor device such as JFET, SIT and the like is provided for accomplishing a reduction in on-resistance and high-speed switching operations. In the JFET or SIT which turns on/off a current with a depletion layer extending in a channel between a gate region formed along trench grooves, ... 01/19/06 - 20060011940 - Thyristor-type memory device A thyristor device can be used to implement a variety of semiconductor memory circuits, including high-density memory-cell arrays and single cell circuits. In one example embodiment, the thyristor device includes doped regions of opposite polarity, and a first word line that is used to provide read and write access to ... 01/12/06 - 20060006409 - Power semiconductor device A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base layer of the second conductivity ... 09/08/05 - 20050194610 - Semiconductor device and manufacturing method thereof Since VF and IR characteristics of a Schottky barrier diode are in a trade-off relationship, there has heretofore been a problem that an increase in a leak current is unavoidable in order to realize a low VF. Moreover, there has been a known structure which suppresses the leak current in ... ### FreshPatents.com Support |