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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Regenerative Type Switching Device (e.g., Scr, Comfet, Thyristor) Regenerative Type Switching Device (e.g., Scr, Comfet, Thyristor)Regenerative Type Switching Device (e.g., Scr, Comfet, Thyristor) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.12/13/07 - 20070284608 - Reduction of dopant loss in a gate structure A semiconductor device includes offset spacers that contact opposing side surfaces of a gate of a gate structure. The offset spacers can be formed by selectively depositing an oxide layer over the gate and the semiconductor substrate so that the opposing side surfaces of the gate e are substantially free ... 10/25/07 - 20070246737 - Electrostatic discharge protection apparatus for integrated circuits An electrostatic discharge (ESD) protection apparatus for integrated circuits is provided. The ESD protection apparatus includes an ESD protection device. The ESD protection device is disposed in a guard ring and includes a special ESD protection unit and an ESD protection unit. The special ESD protection unit is parallel to ... 09/13/07 - 20070210328 - Monolithically integrated light-activated thyristor and method A monolithically integrated light-activated thyristor in an n-p-n-p-n-p sequence consists of a four-layered thyristor structure and an embedded back-biased PN junction structure as a turn-off switching diode. The turn-off switching diode is formed through structured doping processes and/or depositions on a single semiconductor wafer so that it is integrated monolithically ... 08/09/07 - 20070181908 - Electronic module and method of producing the electronic module An electronic module has a heat sink with an upper surface and a lower surface, a plurality of leads arranged adjacent the heat sink and at least one circuit element with two vertical semiconductor power switches. The two vertical semiconductor power switches of each circuit element are arranged in a ... 07/26/07 - 20070170460 - Micro-electro mechanical systems switch and method of fabricating the same A MEMS switch and a method of manufacturing the same are disclosed. The MEMS switch includes: a substrate including a trench, a ground line and a signal line having an opened portion; a moving plate separated from the substrate at a predetermined space and including a contact member for connecting ... 06/28/07 - 20070145408 - Hf control bidirectional switch An HF control bi-directional switch component of the type having its gate referenced to the rear surface formed in the front surface of a peripheral well of the component, including two independent gate regions intended to be respectively connected to terminals of a transformer having a midpoint connected to the ... 06/28/07 - 20070145407 - Thyristor and method of manufacture A thyristor and a method for manufacturing the thyristor that includes a gate region extending from the first major surface into a semiconductor substrate and an anode region extending from the second major surface into the semiconductor substrate. A cathode region extends into a portion of the gate region. Optionally, ... 06/21/07 - 20070138501 - Semiconductor device and method of manufacturing semiconductor device A semiconductor device has a thyristor including a first region of a first conduction type, a second region of a second conduction type opposite to the first conduction type, a third region of the first conduction type, and a fourth region of the second conduction type, in sequential junction, and ... 06/14/07 - 20070131963 - Thyristor which can be triggered electrically and by radiation, and methods for making contact with it A thyristor has a radiation-sensitive breakdown structure (20), a gate electrode (92) that is placed at a distance from the latter in a lateral direction and an ignition stage structure having at least one ignition stage (51, 91) equipped with an n-doped auxiliary emitter (51), which forms a pn-junction (55) ... 04/26/07 - 20070090392 - Low capacitance scr with trigger element A silicon rectifier semiconductor device with selectable trigger and holding voltages includes a trigger element. A first well region of a first conductivity type formed within a semiconductor body. A first region of the first conductivity type is formed within the first well region. A second region of a second ... 04/12/07 - 20070080370 - Display device A plurality of display elements each includes two signal lines: S1 and S2. An electrode 4, which is one of the electrodes constituting an element capacitor Cp, is connected to the signal line S1 via a switching element TFT1, while the other electrode 5 is connected to the signal line ... 03/15/07 - 20070057278 - Magnetic switching element and signal processing device using the same A magnetic switching element according to an example of the present invention includes a magnetic element, first and second electrodes which put the magnetic element therebetween, a current control section which is connected to the first and second electrodes, the current control section controlling a magnetization direction of a magnetization ... 03/01/07 - 20070045656 - Design of silicon-controlled rectifier by considering electrostatic discharge robustness in human-body model and charged-device model devices A silicon-controlled rectifier apparatus, comprising a substrate upon which a low-voltage triggered silicon-controlled rectifier is configured. A plurality of triggering components (e.g., NMOS fingers) are formed upon the substrate and integrated with the low-voltage triggered silicon-controlled rectifier, wherein the plurality of triggering components are inserted into the low-voltage triggered silicon-controlled ... 01/04/07 - 20070001193 - Schottky diode with minimal vertical current flow A method of forming a rectifying diode. The method comprises providing a first semiconductor region of a first conductivity type and having a first dopant concentration and forming a second semiconductor region in the first semiconductor region. The second semiconductor region has the first conductivity type and having a second ... 11/23/06 - 20060261368 - High current electrical switch and method A method and system are disclosed for a high current electrical switch. The switch may be suitable for switching, rectifying or blocking direct current in the range of one to a thousand amperes per module or assembly. It does so with such high efficiency that it produces relatively insignificant heat; ... 11/02/06 - 20060244004 - Active semiconductor component with a reduced surface area A semiconductor component in which the active junctions extend perpendicularly to the surface of a semiconductor chip substantially across the entire thickness thereof. The contacts with the regions to be connected are provided by conductive fingers substantially crossing the entire region with which a contact is desired to be established. ... 10/19/06 - 20060231857 - Method for making a semiconductor device including a memory cell with a negative differential resistance (ndr) device A method for making a semiconductor device may include forming at least one memory cell comprising a negative differential resistance (NDR) device and a control gate coupled thereto. The NDR device may include a superlattice including a plurality of stacked groups of layers, with each group of layers of the ... 08/10/06 - 20060175629 - Vertical thyristor for esd protection and a method of fabricating a vertical thyristor for esd protection A vertical thyristor for ESD protection comprises an anode (10), a cathode (16), a first gate electrode (12) and a second gate electrode (14). The first (12) and second (14) gate electrodes are arranged between the anode (10) and the cathode (16), wherein the first gate electrode (12) is an ... 06/15/06 - 20060124957 - Single-phase converter module A converter module is described having a positive terminal (2), a negative terminal (4), and a phase terminal (3), as well as a first semiconductor chip (9) and a second semiconductor chip (9), the terminals (2-4) and the semiconductor chips (9) being situated on top of one another in a ... 06/08/06 - 20060118812 - Semiconductor device A semiconductor device includes an anode electrode in Schottky contact with an n-type drift layer formed in an SiC substrate and a JTE region formed outside the anode electrode. The JTE region is made up of a first p-type zone formed in an upper portion of the drift layer under ... 06/08/06 - 20060118811 - Bi-directional power switch A semiconductor device that is comprised to two or more MOSFETs to form a bi-directional power switch. One embodiment of the bi-directional switch is comprised of (a) a semiconductor substrate having an upper surface and a lower surface; (b) a first region of a first conductivity type in said semiconductor ... 03/30/06 - 20060065908 - Iii-nitride multi-channel heterojunction interdigitated rectifier A III-nitride power semiconductor device that includes a plurality of III-nitride heterojunctions. ... 01/19/06 - 20060011939 - Two-dimensional silicon controlled rectifier A two-dimensional silicon controlled rectifier (2DSCR) having the anode and cathode forming a checkerboard pattern. Such a pattern maximizes the anode to cathode contact length (the active area) within a given SCR area, i.e., effectively increasing the SCR width. Increasing the physical SCR area, increases the current handling capabilities of ... 12/22/05 - 20050280023 - Gated lateral thyristor-based random access memory cell (gltram) One aspect of the present subject matter relates to a memory cell, or more specifically, to a scalable GLTRAM cell that provides DRAM-like density and SRAM-like performance. According to various embodiments, the memory cell includes an access transistor and a gated, lateral thyristor integrally formed above the access transistor. The ... 11/24/05 - 20050258448 - Thyristor component with improved blocking capabilities in the reverse direction A thyristor comprises a semiconductor body with a front and back face, an edge, a first semiconductor zone, embodied in the region of the rear face and a second semiconductor zone, adjacent to the first semiconductor zone, whereby the edge has a bevelled embodiment in the region of the transition ... 11/03/05 - 20050242369 - Semiconductor device and method of forming a semiconductor device A power semiconductor device has an active region that includes a drift region. At least a portion of the drift region is provided in a membrane which has opposed top and bottom surfaces. In one embodiment, the top surface of the membrane has electrical terminals connected directly or indirectly thereto ... 11/03/05 - 20050242368 - Semiconductor device and method of forming a semiconductor device A power semiconductor device has an active region that includes a drift region. At least a portion of the drift region is provided in a membrane which has opposed top and bottom surfaces. In one embodiment, the top surface of the membrane has electrical terminals connected directly or indirectly thereto ... 11/03/05 - 20050242367 - Thin-film electronic device, in particular power device, and method for making same According to the invention, an electronic device is formed comprising an active part (38,40,42), a first thin layer (36) which is made of a semiconductor material and in which this active part is formed, and a substrate (44) which is made of a conductive material. This device also comprises a ... 10/13/05 - 20050224836 - Silicon controlled rectifier A silicon controlled rectifier is provided, including: a first conducting-type substrate; two second conducting-type deep wells separately disposed inside the first conducting-type substrate; a gate above the first conducting-type substrate and between the two second conducting-type deep wells; a first source/drain inside one of the two second conducting-type deep wells ... 10/06/05 - 20050218424 - Semiconductor device A semiconductor switching device for an inverter includes a first conductivity type, low impurity concentration, semiconductor substrate having a band gap equal to or greater than 2.0 eV, a first conductivity type first region formed in a first plane of the substrate having a resistance lower than the substrate, a ... 10/06/05 - 20050218423 - Junction-gate type static induction thyristor and high-voltage pulse generator using such junction-gate type static induction thyristor A compact, inexpensive static induction thyristor (SIThy) which is less likely to be broken down at a high voltage rise-up rate during operation and which is used in a high-voltage pulse generator capable of generating a high-voltage short pulse is provided. Thicknesses and impurity concentrations of a base region and ... 09/29/05 - 20050212009 - Semiconductor device having electrostatic destruction protection circuit using thyristor as protection element A semiconductor device includes a thyristor, trigger circuit and surge detection/leakage reduction circuit. The anode of the thyristor is connected to a first terminal and the cathode thereof is connected to a second terminal. The trigger circuit is configured to fire the thyristor when surge voltage is applied to the ... 09/22/05 - 20050205891 - Distributed channel bipolar devices and architectures A new distributed channel bipolar device (DCBD) has a large channel of a selected shape formed in a surface of a substrate by doping or by influencing of a coating. The channel acts as a collector or emitter. Another emitter of a transistor is separated from the channel by a ... 07/14/05 - 20050151156 - Switchable resistive perovskite microelectronic device with multi-layer thin film structure A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both ... 07/07/05 - 20050145880 - Strobe light control circuit and igbt device As external connection terminals for an emitter electrode (12) of an IGBT chip, a first emitter terminal (151) for electrically connecting a light emitter in a strobe light control circuit to the emitter electrode (12) and a second emitter terminal (152) for connecting a drive circuit for driving an IGBT ... 06/09/05 - 20050121691 - Active semiconductor component with a reduced surface area A semiconductor component in which the active junctions extend perpendicularly to the surface of a semiconductor chip substantially across the entire thickness thereof. The contacts with the regions to be connected are provided by conductive fingers substantially crossing the entire region with which a contact is desired to be established. ... 06/09/05 - 20050121690 - Semiconductor arrangement comprising a pn-transition and method for producing a semiconductor arrangement A semiconductor system having a pn transition and a method for manufacturing a semiconductor system are disclosed. The semiconductor system is designed in the form of a chip having an edge region, the semiconductor system includes a first layer of a first conductivity type and a second layer of a ... ### FreshPatents.com Support |