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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Incoherent Light Emitter Structure > With Particular Semiconductor Material With Particular Semiconductor MaterialWith Particular Semiconductor Material patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/31/08 - 20080023724 - Light emitting element, light emitting device having the same and method for manufacturing the same A light emitting element comprises a first electrode, a second electrode configured to transmitting light, an organic layer arranged between the first and the second electrodes, comprising a light emitting layer, and a capping layer arranged on the second electrode and made of a material with a higher refractive index ... 01/10/08 - 20080006844 - Crystalline composition, wafer, device, and associated method A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume ... 01/03/08 - 20080001166 - Method of fabricating vertical structure leds A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, ... 01/03/08 - 20080001165 - Opto-electronic and electronic devices using n-face or m-plane gan substrate prepared with ammonothermal growth A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN. ... 12/27/07 - 20070295986 - Method of fabricating vertical structure leds A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, ... 12/27/07 - 20070295985 - Gallium nitride material devices and methods of forming the same The invention provides gallium nitride material devices, structures and methods of forming the same. The devices include a gallium nitride material formed over a substrate, such as silicon. Exemplary devices include light emitting devices (e.g., LED's, lasers), light detecting devices (such as detectors and sensors), power rectifier diodes and FETs ... 12/27/07 - 20070295984 - Gan based luminescent device on a metal substrate wherein the above-described electroconductive substrate includes a metal material that indicates a thermal expansion coefficient different by 1.5×10−6/° C. or less from GaN. ... 12/20/07 - 20070290225 - Method of manufacturing a vertically-structured gan-based light emitting diode The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound ... 12/20/07 - 20070290223 - Semiconductor memory device and method of manufacturing the same A semiconductor memory device includes an insulating film formed on a semiconductor substrate, a fin-shaped semiconductor layer formed on the insulating film, and having first and second side surfaces opposing each other, a gate electrode formed across the first side surface and second side surface of the semiconductor layer, a ... 11/29/07 - 20070272941 - Method for producing iii group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used therein, and a semiconductor element obtained using the method and the apparatus are provided. The method is a method for ... 11/15/07 - 20070262342 - P-type layer for a iii-nitride light emitting device A semiconductor structure includes a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region. At least 10% of a thickness of the semiconductor structure on the first side of ... 11/15/07 - 20070262341 - Vertical led with eutectic layer A vertical light-emitting diode (VLED) structure with a eutectic layer is described. The eutectic layer improves the heat conductivity of the device, thereby leading to increased brightness and higher luminous efficiency. The eutectic bonds of this layer also improve the reliability of the VLED structure since they have a lower ... 10/25/07 - 20070246736 - Light emitting element and communication device using same A light emitting element has a well layer formed of a GaN-based semiconductor, a barrier layer next to the well layer, the barrier layer being formed of a GaN-based semiconductor, and a GaN-based semiconductor layer formed between the well layer and the barrier layer. The GaN-based semiconductor layer has a ... 10/25/07 - 20070246735 - Semiconductor light emitting element A semiconductor light emitting element has an electrode formed on a semiconductor layer, a passivation film covering a part of a top surface of the electrode, and a multilayer film formed on the electrode. The multilayer film has at least one pair of a Ti layer and a Ni layer, ... 10/25/07 - 20070246732 - Oxynitride phosphor and a light emitting device One preferred embodiment according to the present invention, there is provided an oxynitride phosphor and a light emitting device using the same that is able to reduce production costs and chromaticity shifts. The phosphor is represented by a general formula of (Ca1−zYz)x(Si, Al)12(O, N)16:Eu2+y, and has a main phase of ... 10/18/07 - 20070241364 - Substrate with transparent conductive film and patterning method therefor A substrate with transparent conductive film which is suitable for laser patterning and can be produced with high productivity, is provided. A substrate with transparent conductive film, which comprises a glass substrate and a transparent conductive film composed mainly of indium oxide, formed thereon, wherein the average domain diameter at ... 10/18/07 - 20070241363 - Light-emitting diode lamp with low thermal resistance A light-emitting diode (LED) structure with an improved heat transfer path with a lower thermal resistance than conventional LED lamps is provided. For some embodiments, a surface-mountable light-emitting diode structure is provided having an active layer deposited on a metal substrate directly bonded to a metal plate that is substantially ... 10/11/07 - 20070235751 - White light led devices with flat spectra A light emitting apparatus including a phosphor blend including two or more phosphors to provide an emission spectrum simulating the spectral power distribution of a CIE reference illuminant across at least a certain spectral range. Such an apparatus is particularly suited for color-critical applications. ... 10/11/07 - 20070235750 - Nitride-based semiconductor device and method of fabricating the same A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer ... 10/04/07 - 20070228409 - Light emitting element, light emitting device using the light emitting element and method for manufacturing light emitting element To provide a light emitting element that can extract substantially all the light emitted from a luminous layer structure to the outside, a GaN substrate and a luminous layer structure are formed by growing III nitride compound semiconductor on a sapphire substrate that is a growth substrate. Thereafter, the sapphire ... 09/27/07 - 20070221948 - Group iii nitride semiconductor thin film and group iii semiconductor light emitting device A group III nitride semiconductor thin film and a group III nitride semiconductor light emitting device using the same. The group III nitride semiconductor thin film includes a substrate with a concave and convex portions formed thereon; a buffer layer formed on the substrate and made of a group III ... 09/27/07 - 20070221947 - High-refractive index materials comprising semiconductor nanocrystal compositions, methods of making same, and applications therefor A high-refractive index material that includes semiconductor nanocrystal compositions. The high-refractive index material has at least one semiconductor nanocrystal composition incorporated in a matrix material and has a refractive index greater than 1.5. The semiconductor nanocrystal composition has a semiconductor nanocrystal core of a II-VI, III-V, or IV-VI semiconductor material. ... 09/27/07 - 20070221946 - Compound semiconductor light-emitting device This pn-junction compound semiconductor light-emitting device includes a crystal substrate; an n-type light-emitting layer formed of a hexagonal n-type Group III nitride semiconductor and provided on the crystal substrate; a p-type Group III nitride semiconductor layer formed of a hexagonal p-type Group III nitride semiconductor and provided on the n-type ... 09/20/07 - 20070215897 - Gaas integrated circuit device and method of attaching same A gallium arsenide (GaAs) integrated circuit device is provided. The GaAs circuit device has a GaAs substrate with a copper contact layer for making electrical ground contact with a pad of a target device. Although copper is known to detrimentally affect GaAS devices, the copper contact layer is isolated from ... 08/30/07 - 20070200135 - Iii-v group compound semiconductor light-emitting diode A III-V group compound semiconductor light-emitting diode, containing a substrate 1 having plural crystal planes, and a grown layer formed on the substrate by epitaxial growth, the grown layer at least including a barrier layer 2 and 3 and an active layer 8, wherein at least the active layer of ... 08/30/07 - 20070200134 - Gallium nitride material devices including conductive regions and methods associated with the same Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an electrically conductive material (e.g., gold) separated from certain other region(s) of the structure (e.g., a silicon substrate) by a barrier material in order to limit, ... 08/23/07 - 20070194343 - Light emitting device having vertical structure, package thereof and method for manufacturing the same A light emitting device having a vertical structure, a package thereof and a method for manufacturing the same, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity, are disclosed. The method includes growing a semiconductor layer having a multilayer structure ... 08/23/07 - 20070194342 - Gan semiconductor device and process employing gan on thin saphire layer on polycrystalline silicon carbide A substrate for a GaN based semiconductor device is formed by a poly SiC substrate having a thin sapphire layer on the top surface thereof Sapphire layer may be 0.1 to 1.0 microns thick. GaN type layers are then grown atop the sapphire layer with a transition layer between them ... 08/16/07 - 20070187712 - Light emitting device and method of fabricating the same A composite growth-assisting substrate 10 is formed by epitaxially growing a separation-assisting compound semiconductor layer 10k composed of a non-GaAs III-V compound semiconductor single crystal, and then a sub-substrate 10e composed of a GaAs single crystal in this order, on a first main surface of a substrate bulk 10m composed ... 08/09/07 - 20070181907 - Positive electrode for compound semiconductor light-emitting device An object of the present invention is to provide a positive electrode, in which the silver is used, for a compound-semiconductor light-emitting device high in inverse voltage and excellent in stability and productivity. The inventive positive electrode for a compound-semiconductor light-emitting device comprises a reflective layer of a silver alloy. ... 08/09/07 - 20070181906 - Carbon passivation in solid-state light emitters A solid state light emitting device comprises one or more active layers comprising semiconductor nano-particles in a host matrix, e.g. silicon nano-particles in silicon dioxide or silicon nitride. The incorporation of carbon in the active layers provides a great improvement in performance through shortened decay time and enhance emission spectra, ... 08/09/07 - 20070181905 - Light emitting diode having enhanced side emitting capability A LED structure with enhanced side-emitting capability is provided. An embodiment of The LED structure comprises, on top of a substrate, a metallic layer, a non-alloy ohmic contact layer, a thick transparent layer, a light generating structure, sequentially arranged in the this order from bottom to top. The metallic layer ... 08/09/07 - 20070181904 - Semiconductor material and semiconductor device using the same The semiconductor material according to the invention is used as a hole injecting electrode layer of a light emitting device and has a transparent property in a visible region which is expressed in a composition formula of Zn(1-α-β-γ)CuαMgβCdγS(1-x-y)SexTey (0.004≦α≦0.4, β≦0.2, γ≦0.2, 0≦x≦1, 0≦y≦0.2, and x+y≦1). ... 07/26/07 - 20070170458 - Group iii nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same A Group III nitride semiconductor light-emitting device having a stacked structure includes a transparent crystal substrate having a front surface and a back surface, a first Group III nitride semiconductor layer of first conductive type formed on the front surface of the transparent crystal substrate, a second Group III nitride ... 07/26/07 - 20070170457 - Gallium nitride-based compound semiconductor multilayer structure and production method thereof An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an ... 07/19/07 - 20070164308 - Light emitting apparatus and light emitting method A light emitting apparatus has a light emitting element with an emission wavelength in the range of 360 to 550 nm and a rare-earth element doped oxide nitride phosphor or cerium ion doped lanthanum silicon nitride phosphor. Part of light radiated from the light emitting element is wavelength-converted by the ... 07/19/07 - 20070164307 - Light emitting diode A light emitting diode comprising a semiconductor layer, a first electrode, a second electrode and a diamond-like carbon layer is provided. The semiconductor layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. Wherein, the light emitting layer locates between the ... 07/19/07 - 20070164306 - Group iii nitride semiconductor crystal and method of its manufacture, group iii nitride semiconductor device and method of its manufacture, and light-emitting appliance The invention provides Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing ... 07/19/07 - 20070164305 - Ohmic electrode structure of nitride semiconductor device An ohmic electrode structure of a nitride semiconductor device having a nitride semiconductor. The ohmic electrode structure is provided with a first metal film formed on the nitride semiconductor and a second metal film formed on the first metal film. The first metal film is composed of at least one ... 07/19/07 - 20070164304 - Compound semiconductor light-emitting diode A compound semiconductor light-emitting diode comprising a light-emitting layer composed of a Group III-V compound semiconductor, and a current diffusion layer provided on the light-emitting layer and composed of a Group III-V compound semiconductor, characterized in that the current diffusion layer is composed of a conductive boron-phosphide-based semiconductor and has ... 07/05/07 - 20070152234 - Light emitting device A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having ... 07/05/07 - 20070152233 - Manufacture method for zno based compound semiconductor crystal and zno based compound semiconductor substrate A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the ... 07/05/07 - 20070152232 - Gallium nitride-based semiconductor device A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride (GaN) compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity and, ... 06/28/07 - 20070145405 - Light emitting device and method of fabricating the same Disclosed is a light-emitting device (100) has a light-emitting layer portion (24) which is composed of a group III-V compound semiconductor and a transparent thick-film semiconductor layer (90) with a thickness of not less than 40 μm which is formed on at least one major surface side of the light-emitting ... 06/21/07 - 20070138500 - Light-emitting device having light-emitting elements A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge ... 06/21/07 - 20070138499 - Group iii nitride semiconductor device and light-emitting device using the same An object of the present invention is to provide a Group III nitride semiconductor device exhibiting improved crystallinity and a good performance. The inventive Group III nitride semiconductor device comprises a substrate, and a plurality of Group III nitride semiconductor layers provided on the substrate, wherein a first layer which ... 06/14/07 - 20070131962 - Display panel and method for manufacturing the same A display panel includes an insulating substrate, a pixel portion, a gate driver circuit portion, and a drain driver circuit portion. The pixel portion, gate driver circuit portion and drain driver circuit portion are formed out of thin film transistors on the insulating substrate, and the thin film transistors forming ... 06/14/07 - 20070131961 - Alingap led having reduced temperature dependence To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. ... 06/14/07 - 20070131960 - Nitride semiconductor laser element and fabrication method thereof On a nitride semiconductor layered portion formed on a substrate, there are formed an insulating film and a p-side electrode in this order. Furthermore, an end portion electrode protection layer is formed above the p-side electrode, around a position where cleavage will take place. ... 06/14/07 - 20070131959 - Compound semiconductor light-emitting device having pn-junction type hetero structure and forming method thereof A pn-heterojunction compound semiconductor light-emitting device includes a crystalline substrate 101, a lower cladding layer 102 formed on a surface of the crystalline substrate and composed of an n-type Group III-V compound semiconductor, a light-emitting layer 103 formed on a surface of the lower cladding layer and composed of an ... 06/07/07 - 20070126023 - Growth of reduced dislocation density non-polar gallium nitride Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density. ... 06/07/07 - 20070126022 - Vertical gallium-nitride based light emitting diode and manufacturing of the same A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed ... 06/07/07 - 20070126021 - Metal oxide semiconductor film structures and methods Layered and film structures for improving the performance of semiconductor devices include single and multiple quantum wells and double heterostructures and superlattice structures. ... 05/31/07 - 20070120144 - Semiconductor device having group iii nitride buffer layer and growth layers An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An activated nitrogen source introduces activated nitrogen into the growth chamber and directs ... 05/31/07 - 20070120143 - Organic light emitting diode display and method for manufacturing the same In one embodiment, an organic light emitting diode (OLED) display is provided. The OLED display includes a substrate, a first signal line formed on the substrate, a second signal line intersecting the first signal line, a first thin film transistor connected to the first and second signal lines, a second ... 05/31/07 - 20070120142 - Nitride semiconductor light-emitting device and method for manufacturing the same There are provided a nitride semiconductor light-emitting device and a method for manufacturing the same. The nitride semiconductor light-emitting device includes a buffer layer on a sapphire substrate, wherein the buffer layer includes a plurality of layers having different lattice constants, a first n-type nitride semiconductor layer on the buffer ... 05/31/07 - 20070120141 - Optical devices featuring textured semiconductor layers A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is ... 05/24/07 - 20070114564 - Vertical gallium nitride based light emitting diode A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer ... 05/24/07 - 20070114563 - Semiconductor device and method of fabricating the same Provided are semiconductor devices having improved surface morphology characteristics, and a method of fabricating the same. The semiconductor device includes: an r-plane sapphire substrate; an AlxGa(1-x)N(0≦×<1) buffer layer epitaxially grown on the r-plane sapphire substrate to a thickness in the range of 100-20000 Å in a gas atmosphere containing nitrogen ... 05/24/07 - 20070114562 - Red and yellow phosphor-converted leds for signal applications There is provided yellow and red illumination systems, including a semiconductor light emitter, and a luminescent material. The systems have an emission falling within the respective ITE red and yellow color bins having specified color coordinates on the CIE chromaticity diagram. The luminescent material may include one or more phosphors. ... 05/24/07 - 20070114561 - High efficiency phosphor for use in leds Phosphor compositions having the formula (Sr,Ca,Ba)1−xEuxAl2−yMzO4−3/2yFz, where M is Mg and/or Zn; 0.001<x<0.15, 0≦y≦0.3, and 0<z≦0.2; and light emitting devices including a light source and the above phosphor. Also disclosed are blends of (Sr,Ca,Ba)1−xEuxAl2−yMzO4−3/2yFz and one or more additional phosphors and light emitting devices incorporating the same. ... 05/17/07 - 20070108467 - Vertical gan-based light emitting diode A vertical GaN-based LED is provided. The vertical GaN-based LED includes an n-type bonding pad, an n-type reflective electrode formed under the n-type bonding pad, an n-type transparent electrode formed under the n-type reflective electrode, an n-type GaN layer formed under the n-type transparent electrode, an active layer formed under ... 05/17/07 - 20070108466 - Group iii-nitrides on si substrates using a nanostructured interlayer A layered group III-nitride article includes a single crystal silicon substrate, and a highly textured group III-nitride layer, such as GaN, disposed on the silicon substrate. The highly textured group III-nitride layer is crack free and has a thickness of at least 10 μm. A method for forming highly textured ... 05/17/07 - 20070108465 - Porous microstructure multi layer spectroscopy and biosensing A preferred embodiment biosensor is a multi-layer micro-porous thin film structure. Pores in a top layer of the micro-porous thin film structure are sized to accept a first molecule of interest. Pores in a second layer of the micro-porous thin film structure are smaller than the pores in the top ... 05/10/07 - 20070102723 - Zinc-oxide-based light-emitting diode A light-emitting zinc oxide based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity Mg1-x-yCdxZnyO; 0≦x<1, 0<y≦1, and x+y=0.1 to 1 compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and ... 05/03/07 - 20070096143 - Nitride semiconductor light emitting device and method for manufacturing the same The invention relates to a nitride semiconductor light emitting device having a high light emission efficiency, low operating voltage and high resistance to electrostatic discharge. The nitride semiconductor light emitting device includes an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer formed in their order ... 05/03/07 - 20070096142 - Semiconductor device A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer ... 05/03/07 - 20070096141 - Light source structure A light source structure (100) for providing backlights to an LCD panel is provided. The light source structure includes a cathode layer (10), a semiconductor layer (20) disposed on the cathode layer, for emitting electrons when applied with electric field, a dielectric layer (30), disposed on the semiconductor layer a ... 04/26/07 - 20070090391 - Light-emitting element having at least one light-emitting chip crystal A light-emitting element, in particular a light-emitting diode, having at least one light-emitting chip crystal, in particular a semiconductor crystal, is described. At least free surfaces of the light-emitting chip crystal are covered with an inert material—liquid fluid—which is in direct contact with the light-emitting chip crystal. ... 04/26/07 - 20070090390 - Light emitting diode chip A LED chip including a substrate, a first type doped semiconductor layer, a second type doped semiconductor layer, a light emitting layer, at least an Indium-doped AlxGa1-xN based material layer (0≦x<1) and at least a tunneling junction layer is provided. The first type doped semiconductor layer is disposed on the ... 04/26/07 - 20070090389 - Cob-typed led package with phosphor A light emitting diode (LED) package unit, comprising a substrate having a concave, a LED chip, at least two electrodes, at least two wires, a gel and a first wavelength-converting material. The LED chip, disposed in the concave, comprising a top-face, a bottom-face for jointing with the substrate, and at ... 04/26/07 - 20070090388 - Light emitting diode and fabricating method thereof A light emitting diode including a substrate, a semiconductor layer, multiple electrodes, a passivation layer, multiple under bump metallurgy (UBM) layers and a reflective layer is provided. The semiconductor layer is disposed on the substrate. The electrodes and the passivation layer are disposed on the semiconductor layer. The passivation layer ... 04/19/07 - 20070085107 - Light emitting device A light emitting device, free from change of color even when the wavelength of a light emitting element shifts, includes a light emitting element (106) for emitting primary light having an intensity peak at a wavelength shorter than 400 nm; a silicone resin (111) provided to embed the light emitting ... 04/19/07 - 20070085106 - Light emitting element, light emitting device, and electronic apparatus To provide a light emitting element driven at a low voltage, and a light emitting element and an electronic apparatus with low power consumption. The invention provides a light emitting element in which a light emitting layer containing a light emitting substance and a layer containing bathophenanthroline are provided between ... 04/12/07 - 20070080369 - Group iii nitride semiconductor stacked structure and production method thereof The inventive group III nitride semiconductor stacked structure comprises a substrate composed of R-plane sapphire (α-Al2O3), a buffer layer composed of aluminum gallium nitride (AlxGa1−xN: 0≦X≦1) formed on said substrate and an underlying layer composed of an A-plane group III nitride semiconductor (AlxGayInzN1−aMa: 0≦X≦1, 0≦Y≦1, 0≦Z≦1, and X+Y+Z=1; wherein, M ... 04/12/07 - 20070080368 - Nitride semiconductor light-emitting device and method of manufacture thereof In a nitride semiconductor laser bar including a group III-V nitride semiconductor layer, on the front-side cavity end face, a separation layer of aluminum nitride is laid, and further on the separation layer, an end face coating film of aluminum oxide is laid. Likewise, on the rear-side cavity end face, ... 04/12/07 - 20070080367 - Nitride semiconductor and method for manufacturing thereof A P-type nitride semiconductor and a method for manufacturing the same are provided. A nitride semiconductor includes a P-type nitride layer formed on a active layer, wherein the P-type nitride layer is a P-type nitride layer with the group 4 element doped. ... 04/12/07 - 20070080366 - Nitride semiconductor substrate, and method for working nitride semiconductor substrate A method for working a nitride semiconductor substrate, comprising the steps of: preparing a disk-shaped nitride semiconductor substrate comprising a plurality of striped regions having defect concentration regions in which crystal defect density is higher than in surrounding low defect regions; and forming a cut-out at a specific location along ... 04/12/07 - 20070080365 - Gallium nitride-based compound semiconductor light-emitting device, positive electrode for the device, light-emitting diode and lamp using the device An object of the present invention is to provide a flip-chip-type gallium nitride compound semiconductor light-emitting device exhibiting excellent ohmic characteristics, excellent bonding characteristics, and high emission output. The inventive flip-chip-type gallium nitride compound semiconductor light-emitting device comprises a substrate, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor ... 04/05/07 - 20070075329 - Organic light emitting display (oled) with conductive spacer and its method of manufacture An Organic Light Emitting Display (OLED) includes: a lower substrate having at least one thin film transistor arranged thereon in a active region and a power supply lower stripe arranged thereon in a non-emissive region; an upper substrate corresponding to the lower substrate and having a power supply upper stripe ... 04/05/07 - 20070075328 - Semiconductor light-emitting device A semiconductor light-emitting device has a semiconductor substrate, an n-type cladding layer, an active layer, a p-type cladding layer, a p-type buffer layer, a p-type contact layer, and a current spreading layer. A part or all of the p-type buffer layer has a low Mg concentration buffer layer with a ... 04/05/07 - 20070075327 - Semiconductor light-emitting device A semiconductor light emitting device has a light-emitting portion formed on a semiconductor substrate, an As-based p-type contact layer formed thereon, a current spreading layer formed thereon of a metal oxide material, and a buffer layer formed between the p-type cladding layer and the p-type contact layer. The buffer layer ... 04/05/07 - 20070075326 - Diamond field emmission tip and a method of formation A diamond field emission tip and methods of forming such diamond field emission tips, for use with cathodes that will act as a source of and emit beams of charged particles. ... 03/29/07 - 20070069234 - Nitride semiconductor device A nitride semiconductor device is provided. In the device, first and second conductivity type nitride layers are formed. An active layer is formed between the first and second conductivity type nitride layers. The active layer includes at least one quantum barrier layer and at least one quantum well layer. Also, ... 03/29/07 - 20070069233 - Multilayer device and method of making The invention relates to composite articles comprising a substrate and additional layers on the substrate. According to one example, the layers are selected so that the difference in the coefficient of thermal expansion (CTE) between the substrate and a first layer on one side of the substrate is substantially equal ... 03/22/07 - 20070063215 - Manufacturing method for nitride semiconductor device and nitride semiconductor light emitting device obtained with the same Processed traces are formed on at least a part of intended cutting lines A along which a wafer (10) where a nitride semiconductor lamination portion (6) is formed on a GaN based substrate (1) is divided into chips, by irradiating with a laser beam LB having a wavelength which is ... 03/15/07 - 20070057276 - Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of ... 03/15/07 - 20070057275 - Vertical light-emitting diode and method for manufacturing the same A vertical light-emitting diode and a method for manufacturing the same are described. In the method for manufacturing the vertical light-emitting diode, a sapphire substrate is provided. An illuminant epitaxial structure is formed on the sapphire substrate. Next, a first conductivity type electrode is formed on a surface of the ... 03/01/07 - 20070045654 - Group iii-nitride semiconductor thin film, method for fabricating the same, and group iii-nitride semiconductor light emitting device Disclosed herein is a high-quality group III-nitride semiconductor thin film and group III-nitride semiconductor light emitting device using the same. To obtain the group III-nitride semiconductor thin film, an AlInN buffer layer is formed on a (1-102)-plane (so called r-plane) sapphire substrate by use of a MOCVD apparatus under atmospheric ... 03/01/07 - 20070045653 - Selective filtering of wavelength-converted semiconductor light emitting devices A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs the first light and emits second light of a second peak ... 03/01/07 - 20070045652 - Semiconductor device A semiconductor device is provided that includes a semiconductor substrate, a first resistance element on a semiconductor substrate, a capacitance element over the first resistance element, and an insulating layer between the first resistance element and the capacitance element. ... 02/22/07 - 20070040183 - Gallium nitride-based compound semiconductor light-emitting device and electrode for the same An object of the present invention is to provide a light-permeable electrode for use in a gallium nitride-based compound semiconductor light-emitting device, the electrode having improved light permeability and contact resistance. The inventive electrode comprises a light-permeable first layer which is in contact with a surface of a p-contact layer ... 02/15/07 - 20070034892 - Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same A nitride-based light emitting device is manufactured by using a single-crystal nitride-based semiconductor substrate. A seed material layer is deposited on a first substrate where organic residues including a natural oxide layer are removed from an upper surface of the first substrate. A multifunctional substrate is grown from the seed ... 02/15/07 - 20070034891 - Nitride-based light emitting device and manufacturing method thereof A light emitting device according to an exemplary embodiment of the present invention includes: an n-type cladding layer; a p-type cladding layer; an active layer interposed between the n-type cladding layer and the p-type cladding layer; and an ohmic contact layer contacting the p-type cladding layer or the n-type cladding ... 02/01/07 - 20070023777 - Semiconductor element It is an object of the present invention to provide a highly reliable and high-quality semiconductor element by effectively preventing the migration of silver to a nitride semiconductor when an electrode main entirely or mostly of silver having high reflection efficiency is formed in contact with a nitride semiconductor layer. ... 01/25/07 - 20070018192 - Devices incorporating heavily defected semiconductor layers The structure and growth method are disclosed for a novel heterojunction diode structure. The invention exploits the Fermi level pinning properties of dislocations and defects in compound semiconductors to achieve heterojunctions with nonlinear current-voltage characteristics despite highly defected, polycrystalline, or amorphous semiconductors. The invention enable new diode, photodetector, and transistor ... 01/18/07 - 20070012944 - Gan-based light emitting-diode chip and a method for producing same An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence is provided on substantially the full area of its p-side with a reflective, bondable p-contact layer. The substrate is provided on its main surface facing away from the epitaxial layer sequence with a contact ... 01/11/07 - 20070007544 - Semiconductor devices having self aligned semiconductor mesas and contact layers Methods of forming a semiconductor device can include forming a semiconductor structure on a substrate, the semiconductor structure having mesa sidewalls and a mesa surface opposite the substrate. A contact layer can be formed on the mesa surface wherein the contact layer has sidewalls and a contact surface opposite the ... 01/04/07 - 20070001192 - Nitride-based semiconductor element and method of forming nitride-based semiconductor A nitride-based semiconductor element having excellent element characteristics is obtained by obtaining a nitride-based semiconductor layer having excellent crystallinity without performing a long-time etching process. This nitride-based semiconductor element comprises a mask layer, having a recess portion, formed on a substantially flat upper surface of an underlayer to partially expose ... 01/04/07 - 20070001191 - Light emitting device and manufacturing method of the same A light emitting device is provided. In the light emitting device, a multi-layer for intercepting a reverse voltage applied to an active layer is formed between the active layer and a GaN layer. Accordingly, the reliability and operational characteristic of the light emitting device can be improved. ... 12/28/06 - 20060289892 - Method for preparing light emitting diode device having heat dissipation rate enhancement A method for fabricating an LED having section grown on a sapphire substrate, a boded structure, and a unit chip separated from the bonded structure. The method includes (a) bonding the section grown on a first surface of the sapphire substrate to a first surface of a first substrate with ... 12/28/06 - 20060289891 - Electronic and/or optoelectronic devices grown on free-standing gan substrates with gan spacer structures A GaN-based electronic and/or optoelectronic device formed on a free-standing GaN substrate, wherein a thick GaN spacer layer is provided between the device and the substrate, thereby separating the active region of the electronic and/or optoelectronic device from high impurity content at the substrate-epitaxial interface and reducing the detrimental impact ... 12/14/06 - 20060278888 - Vertically-structured nitride semiconductor light emitting diode The present invention relates to a vertically-structured nitride semiconductor light emitting diode. The vertically-structured nitride semiconductor light emitting diode includes an n-type electrode; an n-type nitride semiconductor layer that is formed on the lower surface of the n-type electrode and on which surface texturing with a diffraction grating structure is ... 12/07/06 - 20060273343 - A1xinyga1-x-yn mixture crystal substrate, method of growing same and method of producing same Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1, 0<x+y≦1) mixture crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and ... 12/07/06 - 20060273342 - Gan-series of light emitting diode with high light extraction efficiency A GaN-series of light emitting diode with high light extraction efficiency includes a substrate, a n-type semiconductor, a light emitting layer and a p-type semiconductor layer. More particular, the p-type semiconductor layer includes a p-type cladding layer, a p-type transition layer and a p-type ohmic contact layer, wherein the p-type ... 12/07/06 - 20060273341 - Vertically-structured gan-based light emitting diode and method of manufacturing the same The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound ... 11/30/06 - 20060267043 - Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 360 nm with wall plug efficiencies of at least than 4% are provided. Wall plug efficiencies may be at least 5% or at least 6%. Light emitting devices and methods of fabricating light emitting ... 11/23/06 - 20060261367 - Nitride semiconductor light emitting device The invention provides a nitride semiconductor device and a manufacturing method thereof. In the invention, n-type and p-type nitride semiconductor layers are formed on a substrate, and an active layer is formed therebetween. The n-type nitride semiconductor layers include first and second n-type GaN layers disposed in the order of ... 11/02/06 - 20060244003 - Nitride semiconductor device A nitride semiconductor device includes an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer which are periodically stacked, the second nitride semiconductor layer having a different composition from a composition of the first nitride semiconductor layer. An energy at a lower edge of a ... 11/02/06 - 20060244002 - A semiconductor light-emitting device, and a method of manufacture of a semiconductor device The method of the invention can provide an electron gas having a sheet carrier density of 6×1013 cm−2 or greater. An electron gas with such a high sheet carrier concentration can be obtained with an aluminium-containing nitride semiconductor layer having a relatively low aluminium concentration, such as an aluminium mole ... 11/02/06 - 20060244001 - Method of fabricating vertical structure leds A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, ... 10/26/06 - 20060237741 - Light-emitting diode and method for production thereof An LED (10) includes a compound semiconductor layer (13) that contains a light-emitting part and an alkali glass substrate (150) that contains at least 1 mass % of one element selected from sodium, calcium, barium and potassium and is transparent to light-emitting wavelength of the part. The substrate is fixed ... 10/26/06 - 20060237740 - Mbe growth of an algan layer or algan multilayer structure A method of growing an AlGaN semiconductor layer structure by Molecular Beam Epitaxy comprises supplying ammonia, gallium and aluminium to a growth chamber thereby to grow a first (Al,Ga)N layer by MBE over a substrate disposed in the growth chamber. The first (Al,Ga)N layer has a non-zero aluminium mole fraction. ... 10/05/06 - 20060220057 - Group iii-nitride light emitting device The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode is formed on the p-type clad layer, wherein the p-electrode ... 09/28/06 - 20060214182 - Ohmic electrode structure, compound semiconductor light emitting device having the same and led lamp An Ohmic electrode structure comprising a p-conductivity-type boron phosphide-based semiconductor layer containing boron and phosphorus as constitutional elements and having a surface; and an electrode disposed on said surface of said semiconductor layer and having an Ohmic contact with said semiconductor layer, wherein at least a surface portion of said ... 09/21/06 - 20060208273 - Nitride micro light emitting diode with high brightness and method of manufacturing the same The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurality of micro-sized luminous pillars 10 are formed ... 09/14/06 - 20060202227 - Vertical type nitride semiconductor light emitting diode Disclosed herein is a vertical type nitride semiconductor light emitting diode. The nitride semiconductor light emitting diode comprises an n-type nitride semiconductor layer, an active layer formed under the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed under the active layer, and an n-side electrode which comprises a ... 09/14/06 - 20060202226 - Single or multi-color high efficiency light emitting diode (led) by growth over a patterned substrate A single or multi-color light emitting diode (LED) with high extraction efficiency is comprised of a substrate, a buffer layer formed on the substrate, one or more patterned layers deposited on top of the buffer layer, and one or more active layers formed on or between the patterned layers, for ... 09/07/06 - 20060197104 - Semiconductor device and fabrication method thereof A semiconductor device includes a first nitride semiconductor layer formed on a substrate and a second nitride semiconductor layer formed on the first nitride semiconductor layer so as to be in contact with the first nitride semiconductor layer. The first nitride semiconductor layer contains a p-type impurity. The second nitride ... 08/24/06 - 20060186432 - Polarized radiation source using spin extraction/injection Spin-polarized electrons can be efficiently extracted from an n-doped semiconductor layer (n-S) by forming a modified Schottky contact with a ferromagnetic material (FM) and a δ-doped layer at an interface under forward bias voltage conditions. Due to spin-selection property of the FM-S junction, spin-polarized carriers appear in the n-doped semiconductor ... 08/10/06 - 20060175628 - Nitride-based semiconductor device of reduced voltage drop, and method of fabrication A light-emitting diode is built on a silicon substrate which has been doped with a p-type impurity to possess sufficient conductivity to provide part of the current path through the LED. The p-type silicon substrate has epitaxially grown thereon a buffer region of n-type AlInGaN. Further grown epitaxially on the ... 08/03/06 - 20060170001 - Semiconductor light-emitting device A semiconductor light-emitting device is provided. In an InGaN-based semiconductor light-emitting device including an Ag electrode, a semiconductor layer on the contact side of at least the Ag electrode is a dislocation semiconductor layer of which dislocation density is selected to be less than 1×107 (1/cm2) and thereby short-circuit caused ... 08/03/06 - 20060170000 - Nitride-based compound semiconductor substrate and method for fabricating the same A nitride-based compound semiconductor substrate mainly used for an epitaxial growth of a nitride semiconductor and a method for fabricating the same are disclosed. The nitride-based compound semiconductor substrate has a composition of AlxGa1-xN (0<x<1), a principal plane of C face, an area of 2 cm2 or more, and a ... 07/27/06 - 20060163606 - Photonic crystal light emitting device A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on ... 07/27/06 - 20060163605 - Substrate for thin film formation, thin film substrate, and light-emitting device A substrate for forming a thin film composed mainly of gallium nitride, indium nitride or aluminum nitride, the substrate consisting of a sintered compact composed mainly of a ceramic material; and a thin-film substrate furnished with the thin film. The use of the sintered compact composed mainly of a ceramic ... 07/27/06 - 20060163604 - Gallium nitride-based light emitting device having light emitting diode for protecting electrostatic discharge, and melthod for manufacturing the same A gallium nitride-based light emitting device, and a method for manufacturing the same are provided. The light emitting device comprises a substrate; a main GaN-based LED including a first p-side electrode and a first n-side electrode, the main GaN-based LED formed in a first region on the substrate; and an ... 07/27/06 - 20060163603 - Light-emitting diode device and production method thereof A double hetero structure light-emitting diode device includes an active layer (6), a positive-electrode-side cladding layer, a negative-electrode-side cladding layer (4), a window layer (9) and an undoped AlInP layer. The positive-electrode-side cladding layer includes an undoped AlInP layer (7) grown to have a thickness of 0.5 μm and an ... 07/20/06 - 20060157730 - Nitride-based semiconductor device of reduced voltage drop A light-emitting device has a main semiconductor region formed via an n-type AlInGaN buffer region on a p-type silicon substrate, the latter being sufficiently electroconductive to provide part of the current path through the device. Constituting the primary working part of the LED, the main semiconductor region comprises an n-type ... 07/20/06 - 20060157729 - Semiconductor device It is an object of the present invention to provide a semiconductor device, which can simultaneously achieve a normally-off mode of HFET and an improvement in Imax, and further achieve an improvement in gm and a reduction in gate leakage current. In order to keep a thin barrier layer 13 ... 07/20/06 - 20060157728 - Organic light-emitting device An organic light-emitting device is provided, comprising a bottom electrode, at least two emissive units disposed on the bottom electrode, at least one charge-generation layer disposed between two adjacent emissive units, and a top electrode disposed on the emissive units. The charge-generation layer comprises fullerene or a derivative thereof, and ... 07/13/06 - 20060151803 - Diamond electrode and method for production thereof The invention relates to a diamond electrode with synthetically produced, electrically conductive (doped) diamonds. The surface has diamond particles (5) embedded in a metal or metal alloy layer so as to produce a conductive connection to the metal or metal alloy. ... 07/06/06 - 20060145183 - Method of manufacturing a semiconductor device having a photon absorption layer to prevent plasma damage A MOSFET device structure and a method of manufacturing the same, in which a photon absorption layer is formed over a gate structure and a substrate in order to avoid plasma induced damage to the gate oxide during high density plasma deposition of a interlayer dielectric layer. The device structure ... 07/06/06 - 20060145182 - Nitride semiconductor element and method for manufacturing thereof Disclosed is a method for the preparation of a nitride semiconductor device having a nitride semiconductor layer composed of InN on which a high quality layer of a semiconductor of a nitride of a group III element typified by InN or GaN is grown as traversing dislocation or an interfacing ... 06/29/06 - 20060138449 - Gallium nitride based light-emitting device A manufacturing method and a thus produced light-emitting structure for a white colored light-emitting device (LED) and the LED itself are disclosed. The white colored LED includes a resonant cavity structure, producing and mixing lights which may mix into a white colored light in the resonant cavity structure, so that ... 06/29/06 - 20060138448 - Compound semiconductor and compound semiconductor device using the same A back electrode 6 is formed in the back of a Si single crystal substrate 2 of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer 3 having a thickness of 0.05-2 μm, a carrier concentration of 1016-1021/cm3, a hexagonal InwGaxAl1-w-xN single crystal buffer layer 4 (0≦w<1, ... 06/29/06 - 20060138447 - Light emitting diode The invention relates to a light emitting diode having at least one (semi)conductive electroluminescent active layer which comprises at least two different electroluminescent functionalities, wherein the emission spectrum of the diode exhibits at least two intensity maxima. The invention further relates to a detector which comprises a light emitting diode ... 06/29/06 - 20060138446 - Algainn based optical device and fabrication method thereof The present invention relates to an AlGaInN based optical device fabricated by a new p-type AlGalnN:Mg growth method and method for manufacturing the same, including a p-type nitride semiconductor layer that is grown using both NH3 and a hydrazine based source as a nitrogen precursor, thereby an additional subsequent annealing ... 06/22/06 - 20060131604 - Nitride semiconductor device In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity; a well layer 1a made of ... 06/22/06 - 20060131603 - Semiconductor laser diode A semiconductor laser diode is provided. The semiconductor laser diode includes a substrate; a lower clad layer on a substrate; an active layer on the lower clad layer; and an upper clad layer on the active layer and having a ridge that protrudes in a vertical direction. In the upper ... 06/15/06 - 20060124956 - Quasi group iii-nitride substrates and methods of mass production of the same The present invention discloses the large area high quality quasi group III-nitride substrates comprising two categories: electrically conductive and isolating. The methods manufacturing the same comprise the following process steps in the order presented: disposing a first intermediate layer on a large area silicon (Si) original growth substrate, disposing a ... 06/08/06 - 20060118810 - Crystal growth method of nitride semiconductor The present invention relates to a method of manufacturing a nitride semiconductor, and, more particularly, a crystal growth method of a nitride semiconductor wherein a nitride semiconductor are grown on a nitride buffer layer including aluminums so that it is possible to improve electrical and crystalline characteristics. The invention may ... 06/08/06 - 20060118809 - High power density and/or linearity transistors Field effect transistors having a power density of greater than 25 W/mm when operated at a frequency of at least 4 GHz are provided. The power density may be at least 30 W/mm when operated at 4 GHz. The power density of at least 30 W/mm may be provided at ... 06/01/06 - 20060113559 - Notched compound semiconductor wafer There is provided a notched compound semiconductor crystal having the same specification even if it is turned over. With respect to a compound semiconductor wafer produced by slicing a compound semiconductor crystal having a crystal plane of (100) plane, the crystal is sliced so as to be tilted from the ... 06/01/06 - 20060113558 - Notched compound semiconductor wafer There is provided a notched compound semiconductor crystal having the same specification even if it is turned over. With respect to a compound semiconductor wafer produced by slicing a compound semiconductor crystal having a crystal plane of (100) plane, the crystal is sliced so as to be tilted from the ... 06/01/06 - 20060113557 - Nanophotovoltaic devices The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier ... 05/25/06 - 20060108598 - Gallium nitride-based light-emitting device A light-emitting gallium nitride-based III-V group compound semiconductor device with enhanced brightness includes a substrate, a first-type conductive semiconductor layer, a light-emitting layer, a second-type conductive semiconductor layer, a transparent conductive layer, and two electrodes. During the manufacturing process of chips, a single or a pair of diamond scribing tool ... 05/18/06 - 20060102926 - Compound semiconductor device and the fabricating method of the same A GaN layer functions as an electron transit layer and is formed to exhibit, at least at a portion thereof, A/B ratio of 0.2 or less obtained by a photoluminescence measurement, where “A” is the light-emission intensity in the 500-600 nm band, and “B” is the light-emission intensity at the ... 05/18/06 - 20060102925 - Light emitting diode structure and manufacturing method thereof A LED structure including an epitaxy substrate, a semiconductor layer, a first bonding pad and a second bonding pad, is provided. The epitaxy substrate has a through hole and the semiconductor layer is disposed on the epitaxy substrate. The semiconductor layer includes a first type doped semiconductor layer, a light-emitting ... 05/18/06 - 20060102924 - Diboride single crystal substrate, semiconductor device using this and its manufacturing method Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate ... 05/11/06 - 20060097278 - Gan semiconductor device A GaN-based semiconductor laser device (50) is disclosed as an example of the GaN-based semiconductor light emitting device, and it is a semiconductor laser device having a structure such that a p-side electrode and an n-side electrode are provided on a multilayer structure of GaN-based compound semiconductor layers. The GaN-based ... 05/04/06 - 20060091420 - Diode having vertical structure and method of manufacturing the same A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode. ... 05/04/06 - 20060091419 - Light emitting diode A light emitting diode (LED) utilizes an adhesive layer to adhere a light emitting layer to a substrate. The LED further comprises an electrode buffer layer to enhance the adhesion between the electrode and the light emitting diode, and thus to improve the yield rate of the LED. ... 04/27/06 - 20060086948 - Semiconductor device and semiconductor device manufacturing method A technique is provided which enables formation of nitride semiconductor layers with excellent flatness and excellent crystallinity on a gallium nitride substrate (GaN substrate), while improving the producibility of the semiconductor device using the GaN substrate. A gallium nitride substrate is prepared which has an upper surface having an off-angle ... 04/20/06 - 20060081872 - Compound semiconductor, method for producing the same, semiconductor light-emitting device and method for fabricating the same An inventive method includes the steps of: growing a first p-type semiconductor layer of a compound semiconductor containing phosphorus on a substrate; and growing a second p-type semiconductor layer of a compound semiconductor containing arsenic on the first p-type semiconductor layer. While the first p-type semiconductor layer is grown, magnesium ... 04/13/06 - 20060076574 - Gallium-nitride based light-emitting diodes structure with high reverse withstanding voltage and anti-esd capability An epitaxial structure for GaN-based LEDs to achieve better reverse withstanding voltage and anti-ESD capability is provided herein. The epitaxial structure has an additional anti-ESD thin layer as the topmost layer, which is made of undoped indium-gallium-nitrides (InGaN) or low-band-gap (Eg<3.4 eV), undoped aluminum-indium-gallium-nitrides (AlInGaN). The anti-ESD thin layer could ... 04/06/06 - 20060071234 - Nitride semiconductor substrate and method of producing same A nitride semiconductor substrate having a rugged surface being lapped by whetting granules to roughness between Rms5 nm and Rms200 nm, which has a function of reducing dislocations of a GaN, InGaN or AlGaN layer epitaxially grown on the lapped substrate by gathering dislocations in the epi-layer to boundaries of ... 04/06/06 - 20060071233 - Organic light emitting device and method of manufacturing the same An organic light emitting device (OLED) and a method for manufacturing the same are disclosed. In one embodiment, the OLED includes i) a pixel layer having a first electrode, a second electrode, and a light emitting portion interposed between the first electrode and the second electrode and having at least ... 04/06/06 - 20060071232 - Semiconductor light emitting device having narrow radiation spectrum Radiation occurs when current is injected into an active layer from electrodes. A pair of clad layers is disposed sandwiching the active layer, the clad layer having a band gap wider than a band gap of the active layer. An optical absorption layer is disposed outside at least one clad ... 04/06/06 - 20060071231 - Optical film, backlight assembly having the same and display device having the same An optical film includes a base layer, a resin layer and a plurality of hollow particles. The resin layer is disposed on a surface of the base layer. The hollow particles are disposed in the resin layer. The hollow particles each have an epidermis that defines an inner space of ... 04/06/06 - 20060071230 - Method of fabricating vertical structure leds A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, ... 03/23/06 - 20060060883 - Notched compound semiconductor wafer There is provided a notched compound semiconductor crystal having the same specification even if it is turned over. With respect to a compound semiconductor wafer produced by slicing a compound semiconductor crystal having a crystal plane of (100) plane, the crystal is sliced so as to be tilted from the ... 03/16/06 - 20060054921 - Light emitting diode The light emitting diode comprises a p-type AlGaInP active layer 15, a p-type GaAs contact layer for transparent electrode 17, and an ITO transparent electrode 110. The carrier concentration of the p-type GaAs contact layer 17 has been set to 1.0×1019 cm−3. ... 03/16/06 - 20060054920 - Semiconductor composite device, method for manufacturing the semiconductor composite device, led head that employs the semiconductor composite device, and image forming apparatus that employs the led head A semiconductor composite apparatus includes a semiconductor thin film and a metal layer formed on a substrate. The semiconductor thin film is bonded to the metal layer formed on the substrate. A region is formed between the semiconductor thin film and the metal surface, and contains an oxide of a ... 03/16/06 - 20060054919 - Light-emitting element, method for manufacturing the same and lighting equipment using the same The present invention is a light-emitting element provided with semiconductor layers of gallium nitride compounds 4 having a multilayer structure including an emitting layer 3 formed by subjecting gallium nitride compounds to epitaxial growth on a surface 2 of a substrate 1, wherein a back surface 7 of the semiconductor ... 03/16/06 - 20060054918 - Antimonide-based optical devices An optical device includes an antimonide-containing substrate, and an antimonide-containing n-doped layer provided on the substrate. The optical device further includes an antimonide-containing i-doped layer provided on the n-doped layer, an antimonide-containing p-doped layer provided on the i-doped layer, and an antimonide-containing p+-doped layer provided on the p-doped layer. ... 03/16/06 - 20060054917 - Nitride semiconductor light emitting device and method of manufacturing the same A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active ... 03/09/06 - 20060049425 - Zinc-oxide-based light-emitting diode A light-emitting zinc oxide based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity Mg1-x-y Cdx Zny O; 0≦x<1, 0<y≦1, and x+y=0.1 to 1 compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the ... 03/09/06 - 20060049424 - Gallium-nitride based light-emitting diode structure with high reverse withstanding voltage and anti-esd capability An epitaxial structure for GaN-based LEDs to achieve better reverse withstanding voltage and anti-ESD capability is provided. The epitaxial structure has an additional anti-ESD thin layer on top of the p-type contact layer within traditional GaN-based LEDs, which is made of undoped indium-gallium-nitrides (InGaN) or low-band-gap (Eg<3.4 eV), undoped aluminum-indium-gallium-nitrides ... 03/02/06 - 20060043410 - Light-emitting device and production method thereof A light-emitting device is provided that is excellent in light emission efficiency and stability. The light-emitting device has a first part of a first dielectric constant, a second part of a second dielectric constant and a third part of a third dielectric constant, and has a triple junction where they ... 03/02/06 - 20060043409 - Nitride semiconductor laser device and manufacturing method thereof A nitride semiconductor laser device of the present invention has an electrical connection point which is provided outside of a pair of trenches in the surface of an upper electrode layer so as to make an electrical connection to the outside. The thickness between the surface of the upper electrode ... 03/02/06 - 20060043408 - Semiconductor optical device In a semiconductor optical device, a first conductive type semiconductor region includes first and second semiconductor portions. The first and second semiconductor portions are made of nitride mixed semiconductor crystal. This first semiconductor portion has a first region and a second region. The second semiconductor portion is provided on the ... 02/16/06 - 20060033120 - Gallium nitride based light emitting device and the fabricating method for the same A GaN-based light-emitting device and the fabricating method for the same are described. The light-emitting device is a light-emitting body with a light extraction layer thereon. The light-emitting body has some GaN-based layers and is capable of emitting a light when energy is applied. The light extraction layer is a ... 02/16/06 - 20060033119 - Iii-v group nitride system semiconductor self-standing substrate, method of making the same and iii-v group nitride system semiconductor wafer A III-V group nitride system semiconductor self-standing substrate has: a first III-V group nitride system semiconductor crystal layer that has a region with dislocation lines gathered densely, the dislocation lines being gathered substantially perpendicular to a surface of the substrate, and a region with dislocation lines gathered thinly; and a ... 02/09/06 - 20060027831 - Method for fabricating group iii nitride compound semiconductors and group iii nitride compound semiconductor devices A first Group III nitride compound semiconductor layer 31 is etched, to thereby form an island-like structure such as a dot-like, stripe-shaped, or grid-like structure, so as to provide a trench/post. Thus, a second Group III nitride compound layer 32 can be epitaxially grown, vertically and laterally, from a top ... 02/09/06 - 20060027830 - Light-emitting element, display device, and electronic appliance The present invention provides a light-emitting element having a structure in which the drive voltage is comparatively low and a light-emitting element in which the increase in the drive voltage over time is small. Further, the present invention provides a display device in which the drive voltage and the increase ... 01/26/06 - 20060017062 - Semiconductor optical device In a semiconductor optical device, a first conductive type semiconductor region is provided on a surface of GaAs. The first conductive type semiconductor region has a first region and a second region. An active layer is provided on the first region of the first conductive type semiconductor region. The active ... 01/26/06 - 20060017061 - Nitride semiconductor light emitting device A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode 10 formed on the p-side nitride semiconductor layer, and the p-side pad electrode 14 formed for the connection with an outside circuit, and ... 01/19/06 - 20060011937 - Strain-controlled iii-nitride light emitting device In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is ... 01/12/06 - 20060006408 - Light emitting element and method of making same A light emitting element is provided with a semiconductor layer having a light emitting layer and an uneven surface, and a transparent material formed on the uneven surface. The transparent material has a refractive index lower than a sapphire substrate. Alternatively, a light emitting element is provided with a semiconductor ... 01/12/06 - 20060006407 - Nitride semiconductor device and method of manufacturing the same The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An active layer is formed on the n-type nitride semiconductor layer. A first p-type nitride semiconductor layer is formed on the active layer. A micro-structured ... 01/05/06 - 20060001042 - Epitaxial wafer for semiconductor light-emitting devices, and semiconductor light-emitting device An epitaxial wafer for semiconductor light-emitting devices has an n-type substrate, on which are sequentially formed an n-type cladding layer, an active layer, a p-type cladding layer having Mg as a p-type dopant, and a p-type cap layer. The p-type cap layer has at least two Mg-doped and Zn-doped layers ... 01/05/06 - 20060001041 - Organic light emitting device An organic light emitting device includes a substrate, an array of organic light emitting diodes mounted on the substrate, a cover disposed over the organic light emitting diodes and having a light transmittable region confronting the array of the organic light emitting diodes and an encompassing region around the light ... 12/29/05 - 20050285136 - Light-emitting device A light-emitting device includes a substrate, a first nitride semiconductor stack formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor stack, a second nitride semiconductor stack formed on the nitride light-emitting layer, and a first transparent conductive oxide layer formed on the second nitride semiconductor ... 12/22/05 - 20050280022 - Semiconductor laser device and manufacturing method thereof The present invention aims to provide a long-lived semiconductor laser device with low threshold current and available for high-output operation in a blue-violet semiconductor laser device using a nitride semiconductor layer. In the semiconductor laser device, the following layers are sequentially formed on a GaN substrate 1: an n-type GaN ... 12/22/05 - 20050280021 - Semiconductor optical device In a semiconductor optical device, a first conductive type semiconductor region is provided on a surface of GaAs. The first conductive type semiconductor region has a first region and a second region. An active layer is provided on the first region of the first conductive type semiconductor region. The active ... 12/22/05 - 20050280020 - Visible light emitting diodes fabricated from soluble semiconducting polymers Visible light LEDs are produced having a layer of conjugated polymer which is cast directly from solution or formed as a gel-processed admixture with a carrier polymer. The LEDs can be formed so as to emit polarized light. ... 12/08/05 - 20050269593 - Group iii-nitride layers with patterned surfaces A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or ... 11/17/05 - 20050253163 - Optoelectronic component having a plurality of current expansion layers and method for producing it An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence (6) with a radiation-emitting active zone (4), the semiconductor layer sequence (6) having sidewalls (10). A connection contact (9) is provided for impressing current into the active zone. A first current expansion layer (7) adjoins a semiconductor layer ... 11/10/05 - 20050247954 - Zno based compound semiconductor light emitting device and method for manufacturing the same A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made ... 11/10/05 - 20050247953 - White light-emitting device A white light-emitting device has a semiconductor light-emitting chip, a blue-green phosphor and a red phosphor for emitting blue-green light and red light, respectively. The blue-green phosphor and the red phosphor absorb light emitted from the semiconductor light-emitting chip to excite blue-green light and red light that are mixed into ... 11/10/05 - 20050247952 - Semiconductor light emitting device and method of making the same The invention provides a semiconductor light emitting device and the method of making it. The semiconductor light emitting device, according to the invention, includes an undoped InxGAyAl2N film, as an Ohmic layer, formed between a top-most semiconductor material layer and a transparent conductive oxide layer. Since the undoped film as ... 11/03/05 - 20050242365 - Vertical structure semiconductor devices The invention provides a reliable way to fabricate a new vertical structure compound semiconductor device with improved light output and a laser lift-off processes for mass production of GaN-based compound semiconductor devices. A theme of the invention is employing direct metal support substrate deposition prior to the LLO by an ... 11/03/05 - 20050242364 - Optical devices featuring textured semiconductor layers A semiconductor sensor, solar cell or emitter or a precursor therefore having a substrate and textured semiconductor layer deposited onto the substrate. The layer can be textured as grown on the substrate or textured by replicating a textured substrate surface. The substrate or first layer is then a template for ... 10/27/05 - 20050236643 - Nitride semiconductor device and manufacturing method thereof A nitride semiconductor device enabiling to supress current collapse and manufacturing method thereof including a III-V group nitride semiconductor layer formed of III group elements includes at least one element from the group consisting of gallium, aluminum, boron and indium, and V group elements including at least nitrogen from the ... 10/27/05 - 20050236642 - Gallium nitride-based compound semiconductor device An LED emitting light of wavelength mainly 375 nm or below. The LED includes a GaN layer (16), an n-clad layer (20), an AlInGaN buffer layer (22), a light emitting layer (24), a p-clad layer (26), a p-electrode (30), and an n-electrode (32) arranged on a substrate (10). The light ... 10/20/05 - 20050230701 - High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer A new transparent conducting oxide (TCO), which can be expressed as AlxGa3−x−yIn5+ySn2−zO16−2z; 0≦x<1, 0<y<3, 0≦z<2, has been used to improve the brightness and current spreading in GaN base LED process. The optical properties of this system are superior to regular Ni/Au transparent conducting layer in blue-green region, and the new ... 10/13/05 - 20050224835 - Nitride-based semiconductor laser device A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer, ... 10/13/05 - 20050224834 - Light-emitting semiconductor device using group iii nitrogen compound A light-emitting semiconductor |