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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Incoherent Light Emitter Structure > With Particular Dopant Material (e.g., Zinc As Dopant In Gaas) With Particular Dopant Material (e.g., Zinc As Dopant In Gaas)With Particular Dopant Material (e.g., Zinc As Dopant In Gaas) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/08/07 - 20070051969 - Group iii-v nitride-based semiconductor substrate and method of making same A group III-V nitride-based semiconductor substrate having a group III-V nitride-based semiconductor thick film with a same composition in the entire film. The thick film has a first region with a predetermined impurity concentration and a second region with an impurity concentration lower than the first region. ... 03/01/07 - 20070045651 - Epitaxial wafer for a semiconductor light emitting device, method for fabricating the same and semiconductor light emitting device A n-type GaAs buffer layer 2, a n-type GaInP buffer layer 3, a n-type AlGaInP cladding layer 4, an undoped AlGaAs guide layer 5, an AlGaAs/GaAs multiquantum well (MQW) active layer 6, a first p-type AlGaInP cladding layer 7, a p-type GaInP etching stopper layer 8, a second p-type AlGaInP ... 01/18/07 - 20070012943 - Group iii nitride semiconductor substrate and manufacturing method thereof A method of manufacturing a group III nitride semiconductor substrate includes the growth step of epitaxially growing a first group III nitride semiconductor layer on an underlying substrate, and the process step of forming a first group III nitride semiconductor substrate by cutting and/or surface-polishing the first group III nitride ... 07/06/06 - 20060145181 - Opto-electronic memory element on the basis of organic metalloporphyrin molecules A memory cell for opto-electronic applications includes a substrate, a first electrode and a second electrode, and an active layer arranged between the first and the second electrodes, wherein the active layer includes a metalloporphyrin derivative, and wherein the second electrode is transparent and includes ZnO, which is doped with ... 06/29/06 - 20060138445 - Gan-based and zno-based led Light emitting diodes (LEDs) with various electrode structures which preferably provide increased performance. In some embodiments the LEDs are GaN-based and in some embodiments the LEDs are ZnO-based, with a sapphire substrate or a ZnO substrate. In some embodiments the LEDs are hybrid GaN-based ZnO based LEDs. ... 03/16/06 - 20060054916 - Optical semiconductor device and method of fabricating optical semiconductor device In an optical semiconductor device including, at least, an n-type semiconductor layer having n-type conductivity, an active layer, a p-type semiconductor layer having p-type conductivity, current blocking layers doped with Fe are located on opposite sides of the p-type semiconductor layer. Fe and Be are simultaneously supplied as dopants when ... 11/17/05 - 20050253162 - Light emitting diode having a p-n junction doped with one or more luminescent activator ions A light emitting diode (LED) includes a p-n junction containing luminescent activator ions. The visible emission from the activator ions preferably complementing the band edge emission of the LED in order to produce an overall white emission from the LED. In a preferred embodiment, the LED has double heterojunction structure ... ### FreshPatents.com Support |