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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Incoherent Light Emitter Structure > With Reflector, Opaque Mask, Or Optical Element (e.g., Lens, Optical Fiber, Index Of Refraction Matching Layer, Luminescent Material Layer, Filter) Integral With Device Or Device Enclosure Or Package

With Reflector, Opaque Mask, Or Optical Element (e.g., Lens, Optical Fiber, Index Of Refraction Matching Layer, Luminescent Material Layer, Filter) Integral With Device Or Device Enclosure Or Package

With Reflector, Opaque Mask, Or Optical Element (e.g., Lens, Optical Fiber, Index Of Refraction Matching Layer, Luminescent Material Layer, Filter) Integral With Device Or Device Enclosure Or Package patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

09/18/14 - 20140264409 - Engineered-phosphor led packages and related methods
In accordance with certain embodiments, a phosphor element at least partially surrounding a light-emitting die is shaped to influence color-temperature divergence....

09/18/14 - 20140264410 - Led with ic integrated lighting module
The present disclosure involves a method of packaging light-emitting diodes (LEDs). A carrier having a first side and a second opposite the first side is provided. The carrier includes a plurality of conductive interconnect elements. An integrated circuit (IC) die is bonded to the first side of the carrier. A...

09/18/14 - 20140264411 - Light emitting device
This disclosure discloses a light-emitting chip comprises: a light-emitting stack, having a side wall, comprising an active layer emitting light; and a light-absorbing layer having a first portion surrounding the side wall and being configured to absorb 50% light toward the light-absorbing layer....

09/18/14 - 20140264412 - Semiconductor light emitting device package
A semiconductor light emitting device package includes: a light emitting device; a wavelength conversion unit formed in a path of light emitted from the light emitting device and including a mixture of a wavelength conversion material and a glass material; and a reflective film disposed on an upper surface of...

09/18/14 - 20140264413 - Semiconductor light emitting element, light emitting device, and method for manufacturing semiconductor light emitting element
A semiconductor light emitting element includes a stacked body, a first metal layer, and a second metal layer. The stacked body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The second semiconductor layer is separated from the first semiconductor layer in a first direction....

09/18/14 - 20140264414 - Phosphor, light-emitting device and method for producing the phosphor
[M is mainly Sr and may be partly replaced with at least one element selected from the group consisting of Ba, Ca and Mg; and x, y, z, u, v and w satisfy the conditions of 0<x≦1, 0.8≦y≦1.1, 2≦z≦3.5, 0<u≦1.5, 0.01≦w≦0.1 and 13≦u+v+w≦15, respectively]....

09/18/14 - 20140264415 - Group iii nitride semiconductor light-emitting device and method for producing the same
The present invention provides a Group III nitride semiconductor light-emitting device in which a flat semiconductor layer is grown on a sapphire substrate provided with an uneven shape, and a method for producing the same. When the area ratio R of the flat surface area S on the main surface...

09/18/14 - 20140264416 - Organic light emitting diode with light extracting layer
A light extraction substrate includes a glass substrate having a first surface and a second surface. A light extraction layer is formed on at least one of the surfaces. The light extraction layer is a coating, such as a silicon-containing coating, incorporating nanoparticles....

09/18/14 - 20140264417 - Wiring board and light emitting device
There is provided a wiring board for mounting a light emitting element thereon. The wiring board includes: an insulating layer; a wiring pattern on the insulating layer; a reflecting layer on the insulating layer to cover the wiring pattern, wherein the light emitting element is to be mounted on a...

09/18/14 - 20140264418 - Color stable red-emitting phosphors
y is 5, 6 or 7....

09/18/14 - 20140264419 - Phosphor film, and light emitting device and system using the same
Phosphor film, and light emitting device and system using the same are provided. The light emitting device comprises a package body, a light emitting element disposed on the package body to generate first light, one or more first quantum dot phosphor layers formed above the light emitting element to perform...

09/18/14 - 20140264420 - Photoluminescence wavelength conversion components
A photoluminescence wavelength conversion component comprises a first portion having at least one photoluminescence material; and a second portion comprising light reflective material, wherein the first portion is integrated with the second portion to form the photoluminescence wavelength conversion component....

09/18/14 - 20140264421 - Light emitting device
A light emitting device including a light emitting structure having a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers; a first electrode electrically connected to the first semiconductor layer; and a second electrode disposed on the second semiconductor layer. Further,...

09/18/14 - 20140264422 - Optoelectronic semiconductor component and conversion element
In at least one embodiment, an optoelectronic semiconductor component includes an optoelectronic semiconductor chip. The semiconductor component includes a conversion element that is arranged to convert at least some radiation emitted by the semiconductor chip into radiation of a different wavelength. The conversion element comprises at least one luminescent substance...

09/11/14 - 20140252385 - Light emitting device with enhanced pre-dip and method of manufacturing the same
An illumination device is disclosed. The illumination device includes a light source a pre-dip material that at least partially encapsulates the light source. The pre-dip material may include one or both of thermally-conductive particles and a cyclo-aliphatic composition. The pre-dip material may further include a resin and a hardener for...

09/11/14 - 20140252386 - Sealing structure, device, and method for manufacturing device
Provided is a device in which heat conduction from a sealant to a functional element is suppressed and whose bezel is slim. The sealing structure includes a first substrate, a second substrate whose surface over which a sealed component is provided faces the first substrate, and a frame-like sealant which...

09/11/14 - 20140252387 - Semiconductor light emitting device
According to one embodiment, a semiconductor light emitting device includes first and second columnar units, a wavelength conversion layer, a light emitting unit, a resin unit and an intermediate layer. The first columnar unit extends in a first direction. The second columnar unit is provided apart from the first columnar...

09/11/14 - 20140252388 - Semiconductor light emitting element and method for manufacturing same
According to one embodiment, a semiconductor light emitting element includes: a first conductive pillar extending in a first direction; a second conductive pillar extending in the first direction; a first semiconductor layer of a first conductivity type provided on the first conductive pillar; a light emitting layer provided on the...

09/11/14 - 20140252389 - Semiconductor light emitting device and method for manufacturing the same
According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include applying a resin liquid onto a first major surface of a workpiece. The workpiece has the first major surface and includes a plurality of element units and a resin layer holding...

09/11/14 - 20140252390 - Semiconductor light-emitting device
A semiconductor light-emitting device includes a semiconductor region having a light-emitting structure, an electrode layer formed on the semiconductor region, and a reflective protection structure extending exposing the upper surface of the electrode layer and covering the semiconductor region adjacent to the electrode layer....

09/11/14 - 20140252391 - Light-emitting device
A light-emitting device of an embodiment includes a light-emitting element emitting blue excitation light and a first phosphor excited by the blue excitation light and emitting fluorescence. A peak wavelength of the fluorescence is not shorter than 520 nm and shorter than 660 nm and the peak wavelength of the...

09/11/14 - 20140252392 - Light emitting diode
An embodiment of the present invention provides a light emitting diode including a chip having a light emitting layer on the front surface side and a translucent member that is bonded between a back surface of the chip and a lead frame to support the chip by a resin having...

09/11/14 - 20140252393 - Light-emitting structure
A light-emitting structure is provided. The disclosed light-emitting structure may include a light-emitting diode (LED) die, a plurality of light-penetrating microspheres covered a light emitting surface of the LED die, and a light-penetrating structure, disposed over the LED die and the light-penetrating microspheres, for converting light emitting from the LED...

09/11/14 - 20140252394 - Light emitting device
Provided is a light emitting device. In one embodiment, a light emitting device including: a support member; a light emitting structure on the support member, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive...

09/11/14 - 20140252395 - Semiconductor light emitting device and light emitting apparatus
According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride...

09/11/14 - 20140252396 - Highly efficient gallium nitride based light emitting diodes via surface roughening
A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts...

09/11/14 - 20140252397 - Semiconductor light-emitting device and method for manufacturing same
A semiconductor light-emitting device of the invention includes: a semiconductor layer including a light-emitting layer and having a first major surface and a second major surface opposite to the first major surface; a phosphor layer facing to the first major surface; an interconnect layer provided on the second major surface...

09/11/14 - 20140252398 - Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip
An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer that generates an electromagnetic radiation and a light exit side, and a light coupling-out layer applied to the light exit side, wherein the light coupling-out layer includes of radiation-inactive nanocrystals composed of a material transmissive to the...

09/04/14 - 20140246689 - Led lamp with quantum dots layer
A lighting device 100 includes a light source 101, a first phosphor layer 102 disposed directly or indirectly on top of the light source 101, a first quantum dots layer 103 disposed directly on top of the first phosphor layer 101, and a second phosphor layer 104 disposed directly on...

09/04/14 - 20140246690 - Optoelectronic semiconductor component
An optoelectronic semiconductor component includes one or more light-emitting diode chips. The light-emitting diode chip has a main radiation side. A diaphragm is arranged downstream of the main radiation side along a main radiation direction of the light-emitting diode chip. The diaphragm is mounted on or in a component housing....

09/04/14 - 20140246691 - Semiconductor light emitting device and method for manufacturing same
According to one embodiment, a semiconductor light emitting device includes, a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a first interconnection, and a second interconnection. The first semiconductor layer has a first major surface, a second major surface provided on an opposite side to...

09/04/14 - 20140246692 - Phosphor mixture, optoelectronic component comprising a phosphor mixture, and street lamp comprising a phosphor mixture
A phosphor mixture includes a first phosphor and a second phosphor, wherein an emission spectrum of the first phosphor has a relative intensity maximum in a yellow spectral range and an emission spectrum of the second phosphor has a relative intensity maximum in a red spectral range, the first phosphor...

09/04/14 - 20140246693 - Light emitting diode (led) red fluorescent material and lighting device having the same
Provided are a Light Emitting Diode (LED) red fluorescent material and a lighting device having the same. The florescent material consists of elements M, A, D, X, L and Z, wherein element M at least contains one or more than one element of Be, Mg, Ca, Sr, Ba and Zn;...

08/28/14 - 20140239325 - Light emitter components and methods having improved performance
Light emitter components and methods having improved performance and related methods are disclosed. In one embodiment, a light emitter component can include a submount and at least one light emitting diode (LED) chip disposed over the submount. The submount can contact at least two different sides of the at least...

08/28/14 - 20140239326 - Light emitting diode backlight module
A light emitting diode (LED) backlight module includes a transparent conductive substrate that has an electrode-bearing surface and a plurality of transparent conductive electrodes disposed on the electrode-bearing surface, an LED chip that is welded on the transparent conductive electrodes by flip-chip packaging techniques, and a reflecting member that is...

08/28/14 - 20140239327 - Nanostructured led
The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n-junction and a top portion...

08/28/14 - 20140239328 - Light emitting device package
The present application relates to a light emitting device package. The light emitting device package includes a package substrate in which a via hole is formed. An electrode layer extends to both surfaces of the package substrate after passing through the via hole. A light emitting device is arranged on...

08/28/14 - 20140239329 - Color filter substrate, electrooptic device, electrooptic device manufacturing method, and electronic apparatus
A color filter substrate includes a second base material, a stopper film provided on the second base material, an insulating film including color filter grooves provided on the stopper film, and color filters provided so as to embed the color filter grooves....

08/28/14 - 20140239330 - Optical communication module and method for making the same
An optical communication module includes an optical semiconductor element. The element includes an optical functional region having a light receiving function or a light emitting function, a first transmission layer transmissive to light emitted from the optical functional region or light received by the optical functional region, and a wiring...

08/28/14 - 20140239331 - Light emitting device, light emitting element mounting method, and light emitting element mounter
Disclosed is a light emitting device including: a light emitting element including an LED chip and a phosphor layer provided at the light emitting side of the LED chip; and a substrate on which the light emitting element is bonded by an adhesive material. The adhesive material is an anisotropic...

08/28/14 - 20140239332 - Light emitting device and lighting device including same
A light emitting device includes a base that has an element mounting surface, a light emitting element that is mounted on the element mounting surface and that has maximum light intensity in a directly upward direction, and a coating member that contains a fluorescent body that is excited by light...

08/28/14 - 20140239333 - Led lighting systems with phosphor subassemblies, and/or methods of making the same
Certain example embodiments relate to improved lighting systems and/or methods of making the same. In certain example embodiments, a lighting system includes a glass substrate with one or more apertures. An LED or other light source is disposed at one end of the aperture such that light from the LED...

08/28/14 - 20140239334 - Package structure of light emitting diode
A package structure of semiconductor light emitting element is provided. The package structure of semiconductor light emitting element includes a substrate, a light emitting element and a transparent conductive board. A first electrode and a second electrode are disposed on the substrate. The light emitting element is disposed on the...

08/28/14 - 20140239335 - Light-emitting device and application liquid
Formation of an interlayer is realized for a light-emitting device, the interlayer having properties of anticorrosion and adhesion to a silicone layer, thus preventing incidence of cracking during a baking process. The light-emitting device comprises a light-emitting element covered with the silicone layer, and the interlayer is provided between the...

08/28/14 - 20140239336 - Semiconductor light device including a lens having a light deflection structure
A semiconductor lighting device may include at least one semiconductor light source and a lens, wherein the lens has a light entrance surface at the underside, said light entrance surface facing the at least one semiconductor light source, and a light exit surface at the top side, the light entrance...

08/21/14 - 20140231841 - Semiconductor light-emitting device and method of manufacturing the same
A light-emitting device is disclosed including a light emitting structure comprising a lower layer of the first conductivity type, an active layer, an upper layer of the second conductivity type; a first electrode connected to the lower layer of the first conductivity type; a second electrode connected to the upper...

08/21/14 - 20140231842 - Semiconductor light emitting device and light emitting device
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating film, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar, a second insulating film and a fluorescent material layer. The first...

08/21/14 - 20140231843 - Semiconductor light emitting device and method for manufacturing the same
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode and a fluorescent material layer. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The...

08/21/14 - 20140231844 - Semiconductor light emitting device and method for manufacturing the same
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a fluorescent material layer and a scattering layer. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light...

08/21/14 - 20140231845 - Semiconductor light emitting device and method for manufacturing the same
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a fluorescent material layer and a reflection film. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light...

08/21/14 - 20140231846 - Light emitting module
A light emitting module includes a light-emitting unit, a wavelength converting element and an optical convergent element for partially or totally converting the wavelength of incident light. The light-emitting unit includes a light-emitting element which emits a first light, the wavelength converting element and an optical convergent element disposed in...

08/21/14 - 20140231847 - Light emitting module and lighting device
A light emitting module according to one embodiment includes a substrate; a light emitting body disposed on the substrate; a first phosphor which is excited by emitted light of the light emitting body; and a second phosphor which is arranged between the first phosphor and the light emitting body. The...

08/21/14 - 20140231848 - Engineered-phosphor led packages and related methods
In accordance with certain embodiments, regions of spatially varying wavelength-conversion particle concentration are formed over light-emitting dies....

08/21/14 - 20140231849 - Semiconductor light-emitting devices
Semiconductor light-emitting devices including a semiconductor region that includes a light-emitting structure; and an electrode layer including a first reflection metal layer that contacts a first portion of the semiconductor region and being configured to reflect light from the light-emitting structure and a second reflection metal layer that contacts a...

08/21/14 - 20140231850 - Engineered-phosphor led packages and related methods
In accordance with certain embodiments, regions of spatially varying wavelength-conversion particle concentration are formed over light-emitting dies....

08/21/14 - 20140231851 - Light emitting diode
A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer has a first surface and a second...

08/21/14 - 20140231852 - Led chip resistant to electrostatic discharge and led package including the same
A light emitting diode chip and a light emitting diode package including the same. The light emitting diode chip includes a substrate, a light emitting diode section disposed on the substrate, an inverse parallel diode section disposed on the substrate and connected inversely parallel to the light emitting diode section....

08/21/14 - 20140231853 - Group-iii nitride semiconductor light-emitting element and manufacturing method therefor
A group-III nitride semiconductor light emitting element includes a semiconductor layer that includes a light emitting layer, a p-type semiconductor layer and an n-type semiconductor layer, a p-contact electrode that is in contact with the p-type semiconductor layer, an n-contact electrode that is in contact with the n-type semiconductor layer,...

08/21/14 - 20140231854 - Engineered-phosphor led packages and related methods
In accordance with certain embodiments, regions of spatially varying wavelength-conversion particle concentration are formed over light-emitting dies....

08/21/14 - 20140231855 - Method for producing a light-emitting diode and light-emitting diode
A method of producing a light-emitting diode includes providing at least one light-emitting diode chip, providing a suspension comprising a solvent and particles of at least one luminescent material, arranging the at least one light-emitting diode chip in the suspension, electrophoretically depositing the particles on an outer face of the...

08/21/14 - 20140231856 - Method for producing at least one radiation-emitting and/or -receiving semiconductor component, and semiconductor component
A method for producing a radiation-emitting or radiation-receiving semiconductor component is specified. In a method step, a carrier body having a mounting surface is provided. In a further method step, a barrier frame is formed on the mounting surface, in such a way that the barrier frame laterally encloses a...

08/21/14 - 20140231857 - Phosphor materials and related devices
A phosphor material is presented that includes a blend of a first phosphor, a second phosphor and a third phosphor. The first phosphor includes a composition having a general formula of RE2−yM1+yA2−yScySin-wGewO12+δ:Ce3+ wherein RE is selected from a lanthanide ion or Y3+, where M is selected from Mg, Ca, Sr...