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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Incoherent Light Emitter Structure > With Heterojunction > Plural Heterojunctions In Same Device Plural Heterojunctions In Same DevicePlural Heterojunctions In Same Device patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/31/08 - 20080023710 - Method of growing a nitride single crystal on silicon wafer, nitride semiconductor light emitting diode manufactured using the same and the manufacturing method The invention provides a method for growing a nitride single crystal on a silicon wafer and a method for manufacturing a light emitting device using the same. In growing the nitride single crystal according to one aspect of the invention, first, a silicon substrate having a surface in (111) crystal ... 06/07/07 - 20070126016 - Light emitting device and manufacture method thereof A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on ... 06/07/07 - 20070126015 - Semi-insulating bulk zinc oxide single crystal A semi-insulating zinc-oxide (ZnO) single crystal. The crystal has resistivity of at least 1.5×103 ohm-centimeter (Ω-cm). The ZnO crystal can be produced from a melt contained by solid-phase ZnO to prevent introduction of undesired impurities into the crystal. The crystal can be a bulk single crystal that is cut and ... 05/17/07 - 20070108458 - Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof An object of the present invention is to provide a negative electrode which attains excellent Ohmic contact with an n-type gallium nitride-based compound semiconductor layer and which resists deterioration in characteristics which would be caused by heating. Another object of the invention is to provide a gallium nitride-based compound semiconductor ... 05/03/07 - 20070096126 - Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof An object of the present invention is to provide a negative electrode which attains excellent Ohmic contact with an n-type gallium nitride-based compound semiconductor layer, which resists deterioration in characteristics which would be caused by heating, and which can be produced at high efficiency. Another object of the invention is ... 03/08/07 - 20070051963 - Semiconductor light source A light source is based on a combination of silicon and calcium fluoride (CaF2). The silicon and the calcium fluoride need not be pure, but may be doped, or even alloyed, to control their electrical and/or physical properties. Preferably, the light source employs interleaved portions, e.g., arranged as a multilayer ... 02/08/07 - 20070029558 - Method for manufacturing p-type gallium nitride compound semiconductor, method for activating p-type impurity contained in gallium nitride compound semiconductor, and apparatus for activating p-type impurity contained in gallium nitride compound semicondu A method for manufacturing a p-type gallium nitride compound semiconductor includes providing a gallium nitride compound semiconductor containing a p-type impurity on a surface of a conductive substrate, immersing in an electrolytic solution the conductive substrate on which the gallium nitride compound semiconductor is provided, providing a cathode to be ... 02/01/07 - 20070023773 - Semiconductor light-emitting device A first cladding layer of a first conductivity type formed above a crystal substrate, an active layer formed above the first cladding layer, a diffusion prevention layer formed on the active layer and preventing an impurity from diffusing into the active layer, an overflow prevention layer of a second conductivity ... 01/25/07 - 20070018180 - Vertical electrode structure of gallium nitride based light emitting diode A vertical electrode structure of GaN-based light emitting diode discloses an oxide window layer constructing the GaN-based light emitting diode of vertical electrode structure, which effectively decreases the Fresnel reflection loss and total reflection, and further advances the luminous efficiency. Moreover, the further included metal reflecting layer causes the reflection ... 12/28/06 - 20060289883 - Light emitting device having protrusion and recess structure and method of manufacturing same The semiconductor light emitting device having a protrusion and recess structure includes: a lower clad layer disposed on a substrate; an active layer formed on one portion of a top surface of the lower clad layer; an upper clad layer formed on the active layer; a first electrode formed on ... 11/16/06 - 20060255351 - Metal oxide semiconductor films, structures and methods Materials and structures for improving the performance of semiconductor devices include ZnBeO alloy materials, ZnCdOSe alloy materials, ZnBeO alloy materials that may contain Mg for lattice matching purposes, and BeO material. The atomic fraction x of Be in the ZnBeO alloy system, namely, Zn1-xBexO, can be varied to increase the ... 10/19/06 - 20060231850 - Semiconductor laser diode having ridge portion and method of manufacturing the same Provided is a semiconductor laser diode having a ridge portion and a method of manufacturing the semiconductor laser diode. The semiconductor laser diode includes: a first clad layer, an active layer formed on the first clad layer, a second clad layer formed on the active layer and having a stripe ... 10/05/06 - 20060220044 - Gallium nitride based semiconductor device and method of manufacturing same A gallium nitride based semiconductor device comprises: a first gallium nitride based semiconductor film doped with magnesium; and a second gallium nitride based semiconductor film provided on the first gallium nitride based semiconductor film and doped with magnesium. The first gallium nitride based semiconductor film has substantially flat distributions of ... 10/05/06 - 20060220043 - Nitride semiconductor light emitting device The present invention relates to a nitride semiconductor light emitting device having a rectangular top view in which n-electrode and p-electrode structure is appropriately formed to improve propagation of currents and enhance luminance. The light emitting device includes an n-type nitride semiconductor layer formed on a substrate, and an n-electrode ... 08/31/06 - 20060192218 - Nitride semiconductor light emitting device, and method of fabricating nitride semiconductor light emitting device In a nitride semiconductor light emitting device, a first conductivity type nitride semiconductor layer is provided on a support base and a second conductivity type nitride semiconductor layer is provided on the support base. An active region is provided between the first conductivity type nitride semiconductor layer and the second ... 08/24/06 - 20060186422 - Etching a nitride-based heterostructure An improved solution for producing nitride-based heterostructure(s), heterostructure device(s), integrated circuit(s) and/or Micro-Electro-Mechanical System(s) is provided. A nitride-based etch stop layer that includes Indium (In) is included in a heterostructure. An adjacent layer of the heterostructure is selectively etched to expose at least a portion of the etch stop layer. ... 06/15/06 - 20060124944 - Pixel circuit and light emitting display using the same A light emitting display includes a plurality of light emitting diodes within a pixel. A drive circuit is coupled to the plurality of light emitting diodes and generates a drive current flowing through the light emitting diodes corresponding to a data current. A switch circuit assembly is coupled to the ... 06/08/06 - 20060118799 - Resonant cavity light emitting devices and associated method A method may produce a resonant cavity light emitting device. A seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid may provide a medium for mass transport of gallium nitride precursors therebetween. A seed crystal surface may be prepared by applying a first thermal profile between ... 03/16/06 - 20060054908 - Semiconductor light-emitting device A semiconductor light-emitting device is made of a group III-nitride compound semiconductor expressed as AlxGayIn1-x-yN (where 0≦x≦1, 0≦y≦1, and 0≦x+y≦1). The semiconductor light-emitting device includes: a substrate made of SiC; a semiconductor layer which is placed above the substrate and has a light-emitting region; a multi-layered reflective layer which is ... 03/16/06 - 20060054907 - Light-emitting device of gallium nitride-based iii-v group compound semiconductor A light-emitting device of gallium nitride-based III-V group compound semiconductor includes a substrate, a texturing surface area arranged over the substrate; a n-type gallium nitride-based III-V group compound semiconductor layer having an ohmic contact area with texturing surface disposed over the substrate; a light-emitting layer arranged over the n-type gallium ... 03/09/06 - 20060049417 - Iii-nitride based on semiconductor device with low-resistance ohmic contacts The present invention utilizes high-indium-content InxGa1-xN islands (0<x≦1) formed on a top of a p-type GaN based layer to reduce contact resistance between an electrode and the p-type GaN based layer. These InxGa1-xN islands serve as channels for electrical current to flow through and dramatically reduce the contact resistance between ... 02/23/06 - 20060038191 - Semiconductor light emitting device A semiconductor light emitting device includes: a cavity including a mesa formed over a substrate, the mesa having an active layer and being isolated by a recess formed around the mesa; and a resin layer with which the recess is filled. On the upper surface of the cavity, which is ... 02/16/06 - 20060033116 - Gallium nitride based semiconductor light emitting diode and process for preparing the same The present invention provides a gallium nitride based semiconductor light emitting diode having high transparency, and at the same time, capable of improving contact resistance between a p-type GaN layer and electrode and a process for preparing the same. These objects can be accomplished by forming, on an upper part ... 12/29/05 - 20050285127 - Method of fabricating light-emitting device and light-emitting device A light-emitting device 100 has ITO transparent electrode layers 8, 10 used for applying drive voltage for light-emission to a light-emitting layer section 24, and is designed so as to extract light from the light-emitting layer section 24 through the ITO transparent electrode layers 8, 10. The light-emitting device 100 ... 12/15/05 - 20050274966 - Fuse and write method for fuse A polysilicon fuse includes a fusing part to be fused through voltage application, a positive terminal side joint connected to one end of the fusing part and a negative terminal side joint connected to the other end of the fusing part. The positive terminal side joint that attains a high ... 12/01/05 - 20050263783 - Nitride semiconductor light-emitting device The present invention provides a nitride semiconductor light-emitting device comprising a first conductive nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer, and having at least one quantum well layer and at least one quantum barrier layer alternatively laminated; and a second conductive nitride semiconductor ... 09/29/05 - 20050212002 - Semiconductor light emitting device A semiconductor light emitting device with improved efficiency in extracting light is provided. The semiconductor light emitting device comprises a first conductive type semiconductor layer, a light emitting layer, and a second conductive semiconductor layer stacked in this order, electrodes respectively connected to the first and second conductive semiconductor layers, ... 09/15/05 - 20050199896 - Method of fabricating surface-emission type light-emitting device, surface-emitting semiconductor laser, method of fabricating the same, optical module and optical transmission device A method of fabricating a surface-emission type light-emitting device which emits light in a direction perpendicular to a semiconductor substrate, includes the following steps (a) to (e). (a) A step of forming a column-shaped section by etching at least a part of a multilayer film. (b) A step of forming ... 09/01/05 - 20050189554 - Light emitting diode light source A light source that utilizes light emitting diodes that emit white light is disclosed. The diodes are mounted on an elongate member having at least two surfaces upon which the light emitting diodes are mounted. The elongate member is thermally conductive and is utilized to cool the light emitting diodes. ... 08/25/05 - 20050184302 - Nitride semiconductor device and method of manufacturing the same Provided is a nitride semiconductor device with high reliability and high flexibility in design and manufacture of the device. The nitride semiconductor device comprises a seed crystal portion (11) formed on a sapphire substrate (10) and having a mask (12) on one side surface thereof, and a GaN layer (15) ... 08/25/05 - 20050184301 - Multiple ranging apparatus A multiple ranging apparatus has a light emitting section constituted by a plurality of aligned LEDs which emit light rays of wavelengths different from one another, and a light receiving section constituted by a plurality of aligned PSD parts which have wavelength sensitivities corresponding to the different wavelengths of the ... 07/21/05 - 20050156183 - Light-emitting device having reflecting layer formed under electrode The present invention discloses a light-emitting device that has a substrate, an n-type electrode, an active layer, a p-type semiconductor layer, a reflecting layer, and a p-type electrode. The n-type electrode is located on the bottom surface of the substrate and the active layer is located on a top surface ... 06/23/05 - 20050133803 - Flip-chip nitride light emitting device and method of manufacturing thereof A flip-chip light emitting device and a method of manufacturing thereof are provided. The flip-chip nitride light emitting device includes a substrate, an n type clad layer, an active layer, a p type clad layer, a multi ohmic contact layer, and a reflective layer, which are stacked in this order, ... ### FreshPatents.com Support |