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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Incoherent Light Emitter Structure > With Heterojunction > With Contoured External Surface (e.g., Dome Shape To Facilitate Light Emission) With Contoured External Surface (e.g., Dome Shape To Facilitate Light Emission)With Contoured External Surface (e.g., Dome Shape To Facilitate Light Emission) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.12/27/07 - 20070295977 - Optical semiconductor device and method of manufacturing the same Provided is an optical semiconductor device, which includes a GaAs substrate (or a semiconductor substrate) 20; an n-type contact layer (or a doping layer) 21 formed on one surface 20a of the GaAs substrate 20; an active layer 25 formed on top of the n-type contact layer 21 and including ... 11/08/07 - 20070257269 - Light emitting device and method for manufacturing the same A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or ... 08/16/07 - 20070187704 - Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method thereof, illuminating device and manufacturing method thereof A semiconductor light emitting element, manufacturing method. thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer ... 08/16/07 - 20070187703 - Light emitting systems Light-emitting systems, and related components, systems and methods are disclosed. ... 06/21/07 - 20070138493 - Light-receiving module A light receiving module M comprises a photodiode 1, an IC chip 2, a light permeable and electrically insulating sealing resin member 4 for sealing the photodiode 1 and the IC chip 2, a lens 43 provided at a surface of the sealing resin member 4 facing the photodiode 1, ... 05/24/07 - 20070114546 - Light emitting devices Light-emitting devices, and related components, systems and methods are disclosed. ... 04/19/07 - 20070085098 - Patterned devices and related methods Devices, such as light-emitting devices (e.g., LEDs), and methods associated with such devices are provided. The device may include an interface having a dielectric function that varies spatially according to a transformed pattern, wherein the transformed pattern conforms to a transformation of a precursor pattern according to a mathematical function. ... 03/15/07 - 20070057267 - Led array cooling system A LED array cooling system including a LED array and a substrate attached to the LED array wherein the LED array includes a plurality of walls that at least in part define a plurality of passages through the LED array. ... 01/18/07 - 20070012934 - Method and system of led light extraction using optical elements A light extraction plate can be used with a light emitting diode (LED) to efficiently extract and provide control over the spatial distribution of extracted light in terms of intensity and angle. The extraction plate can have millions of optical micro-elements and can be manufactured independently of the LED using ... 12/07/06 - 20060273334 - Light emitting device, method for making the same, and nitride semiconductor substrate A light-emitting device according to the present invention includes: a GaN substrate 1; a n-type AlxGa1-xN layer 3 on a first main surface side of the GaN substrate 1; a p-type AlxGa1-xN layer 5 positioned further away from the GaN substrate 1 compared to the n-type AlxGa1-xN layer 3; a ... 11/30/06 - 20060267034 - Semiconductor light-emitting device and method for fabricating the same Projections/depressions of a two-dimensional periodic structure are formed in a p-GaN layer (4) such that the period of the projections/depressions is 1 to 20 times the wavelength of light radiated from an active layer (3) in a semiconductor. As a result, a diffractive effect achieved by the projections/depressions of the ... 11/30/06 - 20060267033 - Nitride-based semiconductor light emitting device and manufacturing method thereof The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on ... 11/02/06 - 20060243993 - Light emitting diode chip and light emitting diode using the same A light emitting diode chip includes a first electrode (13), a reflective layer (11) formed on the first electrode, a light emitting layer (12) formed on the reflective layer and a second electrode (14) arranged on the light emitting layer. The light emitting layer tapers in a direction from the ... 09/14/06 - 20060202218 - Light-emitting diode for decoration A light emitting diode includes a light emitting body, a lead frame supplying power to the light emitting body and a light transmitting resin covering the light emitting body and part of the lead frame. The top surface of the light transmitting resin is formed as a plane at a ... 08/17/06 - 20060180820 - Light-emitting semiconductor chip and method for the manufacture thereof A semiconductor chip, particularly a radiation-emitting semiconductor chip, comprises an active thin-film layer in which a photon-emitting zone is formed, and a carrier substrate for the thin-film layer is arranged at a side of the thin-film layer faces away from the emission direction and is connected to it. At least ... 08/10/06 - 20060175625 - Light emitting element, lighting device and surface emission illuminating device using it In a non-sealed type light emitting device in which a diode structure on a face of a transparent substrate by lamination of an n-type semiconductor layer and a p-type semiconductor layer, an outer face of the transparent substrate is made not in parallel with a most outer face of the ... 08/03/06 - 20060169997 - Semiconductor light-emitting device A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a laminated semiconductor structure portion composed of at least a first conductivity type first cladding layer, an active layer and a second conductivity type second cladding layer, wherein an outer peripheral surface of this laminated semiconductor structure portion is ... 07/27/06 - 20060163595 - Light emitting device A light emitting device having a transparent substrate, a light emitting stack, and a transparent adhesive layer is provided. The light emitting stack is disposed above the transparent substrate and comprises a diffusing surface. The transparent adhesive layer is disposed between the transparent substrate and the diffusing surface of the ... 07/20/06 - 20060157719 - Semiconductor light emitting diode having textured structure and method of manufacturing the same A semiconductor light emitting diode having a textured structure and a method of manufacturing the semiconductor light emitting diode are provided. The method includes forming a first semiconductor layer on a substrate; forming a textured structured first semiconductor layer by penetrating a material of a material layer into the first ... 07/13/06 - 20060151798 - Semiconductor light emitting element and semiconductor light emitting device For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to ... 07/06/06 - 20060145171 - Semiconductor light emitting element and semiconductor light emitting device For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to ... 07/06/06 - 20060145170 - Nitride based semiconductor light emitting device The present invention provides a nitride-based semiconductor light emitting device basically comprising a first conductivity type nitride semiconductor layer, active layer and second conductivity type nitride semiconductor layer, which are sequentially formed on a light-permeable substrate in this order. The light emitting device further comprises an insulating light-scattering layer formed ... 05/04/06 - 20060091410 - Low thermal resistance led package A LED chip is bonded on a large submount serving as a heat sink. The submount is punched out from a thin metal sheet together with two other sections of lead frames for the LED and held together with insulating material. The planar structure makes the package thin. A transparent ... 05/04/06 - 20060091409 - Package-integrated thin film led LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth ... 04/06/06 - 20060071223 - Light-emitting diode chip comprising a converter layer and method of making a light-emitting diode chip comprising a converter layer Disclosed is a light-emitting diode chip comprising a semiconductor layer sequence suitable for emitting primary electromagnetic radiation and further comprising a converter layer that is applied to at least one main face of the semiconductor layer sequence and comprises at least one phosphor suitable for converting a portion of the ... 03/30/06 - 20060065905 - Semiconductor component and production method A semiconductor component having a light-emitting semiconductor layer or a light-emitting semiconductor element, two contact locations and a vertically or horizontally patterned carrier substrate, and a method for producing a semiconductor component are disclosed for the purpose of reducing or compensating for the thermal stresses in the component. The thermal ... 03/09/06 - 20060049416 - Solid state white light emitter and display using same A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device a first, relatively shorter wavelength radiation, and a down-converting luminophoric medium arranged in receiving relationship to said first, relatively shorter ... 02/23/06 - 20060038190 - Fabrication method of light emitting diode incorporating substrate surface treatment by laser and light emitting diode fabricated thereby The present invention relates to a fabrication method of LEDs incorporating a step of surface-treating a substrate by a laser and an LED fabricated by such a fabrication method. The present invention can use a laser in order to implement finer surface treatment to an LED substrate over the prior ... 11/17/05 - 20050253157 - Semiconductor light emitting device and semiconductor light emitting apparatus A first semiconductor light emitting device comprises: a transparent substrate; a light emitting layer; and a roughened region. The transparent substrate has a first major surface and a second major surface, and is translucent to light in a first wavelength band. The light emitting layer is selectively provided in a ... 10/20/05 - 20050230697 - Hyperboloid-drum structures and method of fabrication of the same using ion beam etching The present invention relates to a method of mass fabricating a hyperboloid-drum element which is uniform in size and with the diameter of an active layer (active region or gain medium) ranging from tens of nm to less than a few μm, and to an element fabricated thereby. According to ... 07/07/05 - 20050145864 - Semiconductor light-emitting element and method of manufacturing the same There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a ... 06/23/05 - 20050133802 - Pattern mask, light-emitting unit manufactured using the same, display apparatus manufactured using the same and method of manufacturing display apparatus using the same A display apparatus includes a light-emitting unit. The light-emitting unit includes a first electrode, a bank, an organic light-emitting layer and a second electrode. The first electrode is formed on a substrate. The first electrode receives a first driving signal from a circuit unit. The bank surrounds sides of the ... 06/09/05 - 20050121680 - Semiconductor laser and method for manufacturing the same Provided is a semiconductor laser including a substrate etched into a mesa structure, an active layer, clad layers, a current blocking layer, an etch-stop, an ohmic contact layer, and electrodes, and a method for manufacturing the same, whereby it is possible to improve a ratio of light output to input ... ### FreshPatents.com Support |