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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Incoherent Light Emitter Structure > With Heterojunction With HeterojunctionWith Heterojunction patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/24/08 - 20080017874 - Light emitting devices Light-emitting devices, and related components, systems and methods are disclosed. ... 01/10/08 - 20080006835 - Photonic band gap materials with phosphors incorporated The present invention relates to the use of photonic band gap materials with phosphors incorporated. Photonic band gap materials play an important role for LEDs as light sources in applications where either a high radiance is desirable or LEDs are used in optical systems. The optical properties of current LEDs ... 12/06/07 - 20070278506 - Vertical light emitting diode device structure A vertical light-emitting diode (VLED) structure that may impart increased luminous efficiency over conventional LEDs and VLEDs is described. As additional benefits, some embodiments may have less susceptibility to electrostatic discharge (ESD) and higher manufacturing yields than conventional devices. To accomplish these benefits, embodiment of the invention may utilize a ... 11/01/07 - 20070252162 - Light-emitting device and manufacturing method thereof To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of ... 10/25/07 - 20070246719 - P-n junction-type compound semiconductor light-emitting diode In a p-n junction-type compound semiconductor light-emitting diode provided on a crystal substrate with at least an n-type active layer formed of a Group m nitride semiconductor as a light emitting layer, and with a Group m nitride semiconductor layer containing a p-type impurity on the n-type active layer, the ... 10/18/07 - 20070241353 - Group iii intride semiconductor light emitting element A group III nitride semiconductor light emitting element, comprising having a light emitting layer with a multiquantum well structure formed of a group III nitride semiconductor. The light emitting layer has plural well layers, and the plural well layers are formed to coincide in emission wavelength with each other. ... 10/18/07 - 20070241352 - Group iii nitride semiconductor light emitting device It is an object of the present invention to provide a simple and reliable method for forming a rough structure having inclined side surfaces in a light emitting device, and to provide a group III nitride semiconductor light emitting device that is obtained by the method and is excellent in ... 10/18/07 - 20070241351 - Double-sided nitride structures A compound nitride semiconductor substrate includes a substrate having a first side and a second side. A first layer overlies the first side of the substrate and a second layer overlies the second side of the substrate. The first layer includes a first group-III element and nitrogen. The second layer ... 10/11/07 - 20070235744 - Eutectic bonding of ultrathin semiconductors Ultra-high speed semiconductors that are usually very thin and therefore very fragile still require connection to a circuit board and a heat transfer pathway. Ultra-high speed circuits and semiconductor devices are provided with a carrier plate formed on the backside of a wafer or substrate by a variety of deposition ... 09/20/07 - 20070215888 - Light-emitting device, method for driving the same, and electronic apparatus A light-emitting device includes a plurality of pixels, a temperature-detection pixel, a temperature detector, an applied-current calculator, and a current applying unit disposed on a substrate. The pixels include display light-emitting elements for displaying information. The temperature-detection pixel is provided within a display area where the pixels are disposed and ... 09/20/07 - 20070215886 - Compound semiconductor light-emitting device and production method thereof A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the ... 08/30/07 - 20070200125 - Light-emitting device and method for manufacturing the same A light-emitting element is disclosed that can drive at a low driving voltage and that has a longer lifetime than the conventional light-emitting element, and a method is disclosed for manufacturing the light-emitting element. The disclosed light-emitting element includes a plurality of layers between a pair of electrodes; and at ... 08/23/07 - 20070194335 - Boron phosphide-based semiconductor light-emitting device A boron phosphide-based semiconductor light-emitting device includes a substrate of silicon single crystal, a first cubic boron phosphide-based semiconductor layer that is provided on a surface of the substrate and contains twins, a light-emitting layer that is composed of a hexagonal Group III nitride semiconductor and provided on the first ... 07/26/07 - 20070170445 - Semiconductor light-emitting device A semiconductor light-emitting device including a light-emitting layer forming portion, a semiconductor substrate of a first conductivity type, a first electrode which is disposed on a surface of the semiconductor substrate of the first conductivity type, a semiconductor substrate of a second conductivity type, and a second electrode which is ... 07/19/07 - 20070164298 - Led having vertical structure and method for fabricating the same A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor ... 06/28/07 - 20070145389 - Light emitting device A light emitting device firstly includes a light emitting diode (LED) structure, having a top surface with a light emitting region. The device also has a heterojunction within the device structure, the heterojunction having a p-type and an n-type semiconductor layer, and a plurality of electrodes positioned on the top ... 06/21/07 - 20070138492 - Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method ... 06/21/07 - 20070138491 - Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride film deposited adjacent to the light ... 06/21/07 - 20070138490 - Semiconductor light emitting device The present invention provides a semiconductor light emitting device capable of easily realizing stable output characteristics within a wide temperature range. The semiconductor light emitting device includes a semiconductor laser element, and a semiconductor photodiode having an absorption layer disposed on a semiconductor substrate, a second conductivity type region formed ... 06/21/07 - 20070138489 - Semiconductor light-emitting device and a method of fabricating the same A semiconductor light-emitting device is fabricated in a nitride materials system and has an active region comprising two or more quantum well layers. Each quantum well layer is separated from a neighbouring quantum well layer by a respective barrier layer. The or each barrier layer has a thickness that is ... 06/14/07 - 20070131953 - Nitride semiconductor light emitting device and method for fabricating the same Disclosed is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises a buffer layer having a super-lattice layer on a silicon substrate, a first conductive clad layer on the buffer layer, an active layer on the first conductive clad layer, and a second conductive clad layer ... 06/14/07 - 20070131952 - Semiconductor device integrated with heat sink and method of fabricating the same The present invention is to provide a semiconductor device which includes a mounting base and a light-emitting device. The mounting base includes a substrate of a first semiconductor material and a first layer of a material with high thermal conductivity formed over the substrate. Furthermore, the light-emitting device is a ... 06/14/07 - 20070131951 - Light-emitting element and making method thereof A light-emitting element having: a gallium oxide substrate on a front surface of which a crystal of a semiconductor material having a light-emitting element part is grown; and a substrate protection layer formed on a back surface of the gallium oxide substrate. A method of making a light-emitting element having ... 06/07/07 - 20070126014 - Light-emitting element with heterojunction structure A method for manufacturing a light-emitting element with a heterojunction of group IV is provided. The method comprises at least the steps of: (1) providing a silicon substrate having a first and a second surfaces; (2) forming a germanium layer on the first surface; (3) forming a cap layer on ... 05/24/07 - 20070114545 - Vertical gallium-nitride based light emitting diode A vertical GaN-based LED includes: an n-type bonding pad; an n-electrode formed under the n-type bonding pad; an n-type transparent electrode formed under the n-electrode; an n-type GaN layer formed under the n-type transparent electrode; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under ... 05/17/07 - 20070108457 - Gan-series light emitting diode with high light efficiency and the manufacturing method A GaN-series light emitting diode with high light efficiency utilizes a p-type semiconductor layer having a textured surface structure. The optical waveguide effect can be interrupted and formation of hexagonal shaped pits defect can be reduced due to the textured structure. The p-type semiconductor layer is formed on a light ... 05/17/07 - 20070108456 - Superlattice strain relief layer for semiconductor devices A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use ... 04/26/07 - 20070090378 - Nitride-based semiconductor light emitting diode A nitride-based semiconductor LED which is flip-chip bonded on a lead pattern of a sub-mount through a bump ball comprises a substrate; a light-emitting structure formed on the substrate; an electrode formed on the light-emitting structure; a protective film formed on the resulting structure having the electrode formed therein, the ... 04/26/07 - 20070090377 - Light emitting device and method of forming the same A light emitting device includes a substrate and an adhesive layer on the substrate. At least two multi-layer epitaxial structures are on the substrate. Each structure sequentially includes an upper cladding layer, an active layer, a lower cladding layer, an ohmic contact epitaxial layer, and a first ohmic contact electrode ... 04/26/07 - 20070090376 - Light-emitting element and light-emitting device It is an object of the present invention to provide a light-emitting element having, between a pair of electrodes, a layer containing a light-emitting material and a transparent conductive film, wherein the electric erosion of the transparent conductive film and reflective metal can be prevented and to provide a light-emitting ... 04/19/07 - 20070085097 - Nitride semiconductor light emitting device The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well ... 04/19/07 - 20070085096 - Light emitting diode package An LED package is provided. The LED package includes: at least one device having at least one LED; at least one resistor having a resistance component; a plurality of bonding pads formed spaced apart from each other on one side of the resistor and changing resistance of the resistor according ... 04/19/07 - 20070085095 - Nitride based semiconductor light emitting diode A nitride based semiconductor LED is provided. In the nitride based semiconductor LED, an n-type nitride semiconductor layer is formed on a substrate. the n-type nitride semiconductor layer has the top surface divided into a first region and a second region with a finger structure, so that the first region ... 03/29/07 - 20070069226 - Fabrication method of nitride semiconductor light emitting device and nitride semiconductor light emitting device thereby A method for fabricating a nitride semiconductor light emitting device, and a nitride semiconductor light emitting device fabricated thereby are provided. The method includes: forming a first conductive nitride semiconductor layer on a substrate; forming an active layer on the first conductive nitride semiconductor layer; forming a second conductive nitride ... 03/29/07 - 20070069225 - Iii-v light emitting device A semiconductor structure includes an n-type region, a p-type region, and a III-nitride light emitting layer disposed between the n-type region and the p-type region. The III-nitride light emitting layer has a lattice constant greater than 3.19 Å. Such a semiconductor structure may be grown on a substrate including a ... 03/22/07 - 20070063207 - Nitride semiconductor device According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device. In ... 03/08/07 - 20070051962 - Gallium nitride semiconductor light emitting device The present invention is a semiconductor structure for light emitting devices that can emit light with multiple wavelengths, in particular, in the blue to ultraviolet region of the electromagnetic spectrum. The structure comprises an active portion positioned between a p-type gallium nitride (GaN) layer and an n-type gallium nitride (GaN) ... 03/08/07 - 20070051961 - Nitride semiconductor light-emitting device A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconductor layer or substrate has a trench region deeper than the ... 03/01/07 - 20070045639 - Semiconductor electronic device A semiconductor electronic device includes a buffer layer formed on a substrate, and a semiconductor operating layer that is formed on the buffer layer. The semiconductor operating layer includes a nitride-based compound semiconductor and. The buffer layer includes at least one composite layer that includes a first layer and a ... 03/01/07 - 20070045638 - Iii-nitride light emitting device with double heterostructure light emitting region A III-nitride light emitting layer is disposed between an n-type region and a p-type region. The light emitting layer is a doped thick layer. In some embodiments, the light emitting layer is sandwiched between two doped spacer layers. ... 02/22/07 - 20070040181 - Crystalline composition, wafer, and semi-conductor structure A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume ... 02/08/07 - 20070029557 - Light-emitting diode, one of the electrodes of which is a multilayer made of amorphous carbon Diode comprising a substrate and an organic electroluminescent layer interposed between a lower electrode and an upper electrode, at least one of which electrodes is formed from a multilayer which is itself formed by the stack of adjacent sublayers made of amorphous carbon, having different refractive indices n1, n2. The ... 02/01/07 - 20070023772 - Semiconductor light-emitting device and method of manufacturing same A semiconductor light-emitting device has a first conductivity type semiconductor layer (3, 4), a luminous layer (5) formed on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer (8) formed on the luminous layer, and a transmissive substrate (9) which is formed on the second conductivity type ... 02/01/07 - 20070023771 - Led and fabrication method thereof A light emitting diode is provided. The diode includes: a substrate; a first nitride gallium layer disposed above the substrate; a first electrode provided at one portion of and above the first nitride gallium layer; an active layer provided above the first nitride gallium layer, for emitting light; a second ... 01/25/07 - 20070018179 - Vertical conducting power semiconducting devices made by deep reactive ion etching The Invention Is A Method For Making Power Device On A Semiconductor Wafer, Where The Backside Of The Wafer Has Been Thinned In Selected Regions To A Thickness Of About 25 Um By Reactive Ion Etching. ... 01/25/07 - 20070018178 - Vertical electrode structure of gallium nitride based light emitting diode A vertical electrode structure of GaN-based light emitting diode discloses an oxide window layer constructing the GaN-based light emitting diode of vertical electrode structure, which effectively decreases the Fresnel reflection loss and total reflection, and further advances the luminous efficiency. Moreover, the further included metal reflecting layer causes the reflection ... 01/25/07 - 20070018177 - Vertical gan-based led and method of manufacturing the same Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of ... 01/18/07 - 20070012933 - Light emitting diode and method of fabricating the same A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, ... 01/18/07 - 20070012932 - Nitride semiconductor; light-emitting device, light-emitting diode, laser device and lamp using the semiconductor; and production methods thereof An object of the present invention is to provide a nitride semiconductor product which causes no time-dependent deterioration in reverse withstand voltage and maintains a satisfactory initial reverse withstand voltage. The inventive nitride semiconductor product comprises an n-type layer, a light-emitting layer, and a p-type layer which are formed of ... 01/11/07 - 20070007541 - White light emitting device The invention relates to a nitride light emitting device including first and second conductivity type nitride layers and a plurality of active regions emitting light of different wavelength. The active regions are sequentially formed between the first and the second conductivity type nitride layers. The active regions include at least ... 01/11/07 - 20070007540 - Light-emitting device A light-emitting device (200) has a submount (100) and a plate for heat transfer (300) having a metallic plate (30). The submount (100) has a mount base (10), at least one light-emitting diode chip (5) mounted thereon and electrically conducting lines (12-17) formed on the mount base (10) to be ... 12/28/06 - 20060289882 - Organic electroluminescent element and organic electroluminescent display device An organic electroluminescent element comprising a cathode, an anode, an intermediate unit arranged between a cathode and an anode, a first light emitting unit arranged between a cathode and an intermediate unit, and a second light emitting unit arranged between an anode and an intermediate unit, wherein an electron extracting ... 12/21/06 - 20060284194 - Imaging member An imaging member includes an electrically conductive layer; a positive charge blocking layer, an imaging layer, and an undercoat layer. The undercoat layer is intermediate the imaging layer and the electrically conductive layer. The undercoat layer includes a film forming polymer and a particulate material dispersed therein. The particulate material ... 12/07/06 - 20060273333 - Light emitting diode and method of fabricating thereof A light emitting diode (LED) is made of a substrate and an epitaxial structure. A surface of the epitaxial structure has many mass transferred patterns. The mass transferred patterns are formed by a mass transfer method to deform an original rough surface of the epitaxial structure. The surface topography of ... 11/30/06 - 20060267032 - Light-emitting diode arrangement A light-emitting diode arrangement includes one or more LED crystal pieces that are mechanically held by leads and connecting lines. ... 11/16/06 - 20060255350 - Semiconductor device and method for fabricating the same A semiconductor device has a substrate, a first Group III nitride semiconductor layer formed on the substrate, a first oxide layer formed in proximity to the upper portions of defects present in the first Group III nitride semiconductor layer, and a second Group III nitride semiconductor layer including a positive ... 11/16/06 - 20060255349 - High power allngan based multi-chip light emitting diode A light emitting diode chip having a substantially transparent substrate and having an aspect ratio, which defines an elongated geometry provides enhanced efficiency and brightness. Method for forming and operating the same are also disclosed. ... 11/09/06 - 20060249741 - Gan semiconductor devices with a1n buffer grown at high temperature and method for making the same A method for growing high-quality single crystal III-V compound semiconductor layers of nitrides on a substrate that has a large lattice mismatch including first forming an AIN layer on a substrate, and then forming a GaN layer on the AIN layer. ... 11/02/06 - 20060243992 - Semiconductor light-emitting device The present invention provides a light-emitting device with a quantum well structure comprising a barrier layer containing aluminum, gallium, indium and arsenic, which reduces the leak current flowing in the buried layer. The buried layer includes first and second buried layers stacked to each other and covers the sides of ... 11/02/06 - 20060243991 - Light emitting diode and manufacturing method thereof A method for fabricating a light emitting diode (LED) is provided. First, a first type doped semiconductor layer, an emitting layer and a second type doped semiconductor layer are sequentially formed on an epitaxy substrate. Then, a gold layer is formed on the second type doped semiconductor layer. Next, a ... 10/12/06 - 20060226434 - Nitride-based semiconductor light emitting device and manufacturing method thereof A present nitride-based semiconductor light emitting device includes: a pattern surface formed on a conductive substrate; a multilayered metal layer formed on the pattern surface; and a multilayered semiconductor layer formed on the multilayered metal layer, and characterized in that main surfaces of the multilayered metal layer and the multilayered ... 10/05/06 - 20060220042 - Semiconductor device and fabrication method of the same A semiconductor device includes a mask layer having openings on a substrate, a GaN-based semiconductor layer selectively formed on the substrate with the mask layer that serves as a mask, a gate electrode and either a source electrode or an emitter electrode formed on the GaN-based semiconductor layer, and a ... 10/05/06 - 20060220041 - Solid state device with current spreading segments Solid state devices, such as solid state light emitting devices, having non-linear current spreading segments are disclosed. Projection subsystems and systems equipped with such solid state light emitting devices are also disclosed. ... 09/14/06 - 20060202217 - Nitride semiconductor light emitting device and method of manufacturing the same A nitride semiconductor light emitting device includes a substrate for growing a gallium nitride-based semiconductor material, an n-type nitride semiconductor layer on the substrate, an active layer on the n-type nitride semiconductor layer such that a predetermined portion of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor ... 09/14/06 - 20060202216 - Semiconductor light emitting device, semiconductor light emitting apparatus, and method of manufacturing a semiconductor light emitting device A semiconductor light emitting device comprises: a semiconductor multilayer structure; and an aluminum nitride layer. The semiconductor multilayer structure includes a light emitting layer that emits a light. The aluminum nitride layer is provided on a surface of the semiconductor multilayer structure. The aluminum nitride layer has asperities with an ... 09/14/06 - 20060202215 - Polarization-reversed iii-nitride light emitting device A device structure includes a III-nitride wurtzite semiconductor light emitting region disposed between a p-type region and an n-type region. A bonded interface is disposed between two surfaces, one of the surfaces being a surface of the device structure. The bonded interface facilitates an orientation of the wurtzite c-axis in ... 09/07/06 - 20060197100 - Reverse polarization light emitting region for a semiconductor light emitting device A semiconductor light emitting device includes a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer may be a wurtzite III-nitride layer with a thickness of at least 50 angstroms. The light emitting layer may have a polarization reversed from a conventional wurtzite ... 08/31/06 - 20060192217 - High efficiency light emitting diode (led) with optimized photonic crystal extractor A high efficiency, and possibly highly directional, light emitting diode (LED) with an optimized photonic crystal extractor. The LED is comprised of a substrate, a buffer layer grown on the substrate (if needed), an active layer including emitting species, one or more optical confinement layers that tailor the structure of ... 08/24/06 - 20060186421 - Schottky diode with low leakage current and fabrication method thereof A low leakage Schottky diode and fabrication method thereof. The Schottky diode includes a n-type semiconductor; an anode having a circular periphery formed in a region above the n-type semiconductor; and a cathode formed in a region above the n-type semiconductor and having a pattern surrounding and set apart from ... 08/17/06 - 20060180819 - Reflective electrode and compound semiconductor light emitting device including the same A reflective electrode and a compound semiconductor light emitting device including the same are provided. The reflective electrode formed on a p-type compound semiconductor layer of a compound semiconductor light emitting device including an n-type compound semiconductor layer, an active layer, and the p-type compound semiconductor layer, has an ohmic ... 08/10/06 - 20060175624 - Semiconductor light-emitting device A semiconductor light-emitting diode, and method of fabricating same, wherein an indium (In)-containing light-emitting layer, as well as subsequent device layers, is deposited on a textured surface. The resulting device is a phosphor-free white light source. ... 08/03/06 - 20060169996 - Crystalline composition, wafer, and semi-conductor structure A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1. ... 08/03/06 - 20060169995 - Semiconductor light emitting device A semiconductor light emitting device includes a hetero-configuration having an active layer, a first clad layer, and a second clad layer, the active layer being interposed between the clad layers. The active layer emits light when charge carriers are injected. The first and second clad layers keep the injected charge ... 07/27/06 - 20060163594 - High electron mobility devices The present invention is directed to high frequency, high power or low noise devices such as low noise amplifiers, amplifiers operating at frequencies in the range of 1 GHz up to 400 GHz, radars, portable phones, satellite broadcasting or communication systems, or other devices and systems that use high electron ... 07/27/06 - 20060163593 - Semiconductor light emitting device A semiconductor light emitting device includes a hetero-configuration having an active layer, a first clad layer, and a second clad layer, the active layer being interposed between the clad layers. The active layer emits light when charge carriers are injected. The first and second clad layers keep the injected charge ... 07/27/06 - 20060163592 - Light emitting diode and fabricating method thereof A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized ... 06/15/06 - 20060124943 - Large-sized light-emitting diodes with improved light extraction efficiency A light-emitting device with an array of window openings to enhance the light extraction efficiency from this device is provided. This array of window openings is employed to create a much larger sidewall area to enhance the light extraction from the sidewalls of these openings. With this array of window ... 06/01/06 - 20060113553 - White light emitting phosphor blend for led devices There is provided a white light illumination system including a radiation source, a first luminescent material having a peak emission wavelength of about 570 to about 620 nm, and a second luminescent material having a peak emission wavelength of about 480 to about 500 nm, which is different from the ... 05/25/06 - 20060108593 - Gan-based compound semiconductor light emitting device A GaN-based compound semiconductor light emitting device is provided. The semiconductor light emitting device includes a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on a first region of the n-type semiconductor layer; a p-type semiconductor layer formed on the active layer; a p-type electrode ... 05/11/06 - 20060097272 - High light efficiency of gan-series of light emitting diode and its manufacturing method thereof A high light efficiency of GaN-series of light emitting diode and its manufacturing method thereof disclose a process and structure of a p-type semiconductor layer of surface texture structure generation. The optical waveguide effect can be interrupted and the possibility of hexagonal shaped pits defect generated can be reduced through ... 05/04/06 - 20060091408 - Nitride based semiconductor device using nanorods and process for preparing the same Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical ... 04/13/06 - 20060076567 - Driving method of light emitting device If a potential of a gate electrode of a driving transistor varies after a gray scale signal is inputted into each pixel, a current value of a current supplied to a light emitting element varies so that accurate gray scale display cannot be obtained. In particular, in the case of ... 03/23/06 - 20060060872 - High output group iii nitride light emitting diodes A light emitting diode is disclosed that includes a silicon carbide substrate and a light emitting structure formed from the Group III nitride material system on the substrate. The diode has an area greater than 100,000 square microns and has a radiant flux at 20 milliamps current of at least ... 03/23/06 - 20060060871 - Enhancement mode iii-nitride fet A III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device. By providing a recessed gate contact, a conduction channel formed at the interface of two III-nitride materials is interrupted when the gate electrode is inactive to prevent current flow in the device. ... 03/09/06 - 20060049415 - Monolithic multi-color, multi-quantum well semiconductor led A monolithic, multi-color semiconductor light emitting diode (LED) is formed with a multi-bandgap, multi-quantum well (MQW) active light emitting region which emits light at spaced-apart wavelength bands or regions ranging from UV to red. The MQW active light emitting region comprises a MQW layer stack including n quantum barriers which ... 03/02/06 - 20060043396 - Sapphire substrate, epitaxial substrate and semiconductor device An epitaxial substrate for manufacturing field effect transistor (FET) that has heterojunction structure consisting of at least a channel layer made of gallium nitride or gallium indium nitride and a barrier layer made of aluminum gallium nitride formed successively on the principal plane of the sapphire substrate, wherein the principal ... 03/02/06 - 20060043395 - Semiconductor light-emitting element and method of producing the same There is provided a semiconductor light-emitting element and a method of producing the same including high density and high quality quantum dots emitting light at a wavelength of 1.3 μm. A semiconductor light-emitting element has a first GaAs layer, a second InAs thin film layer having the plurality of InAs ... 03/02/06 - 20060043394 - Gallium-nitride based light emitting diode structure A gallium-nitride(GaN) based light emitting diode (LED) structure utilizing materials having compatible lattice constant is provided. When aluminum-indium-nitride (AlxIn1-xN, 0<x<1) is used to make the p-type cladding layer within the GaN-based LED structure, the cladding layer has a lattice constant compatible with that of GaN. The active layer's multi-quantum well ... 02/16/06 - 20060033115 - Transparent, thermally stable light-emitting component comprising organic layers The invention relates to a thermally stable, high efficient, transparent light-emitting component, which comprises organic layers, is run at low operating voltages and is simple to produce. The aim of the invention is to disclose a completely transparent (>70% transmission) organic light-emitting diode, which can be operated at a reduced ... 02/09/06 - 20060027823 - Semiconductor conductive layers Structures and methods for electronic devices with improved conductive regions are provided. The conductive region may include digital alloy superlattice structures, which allow higher doping levels to be achieved than for a bulk (random) alloy with the same average composition. Furthermore, the superlattice structures may improve the resistivity of the ... 02/09/06 - 20060027822 - Light emitting display and driving method thereof A light emitting display displays an image on a display panel having a plurality of scan lines, a plurality of data lines, and a plurality of pixel circuits. In the light emitting display, one of the plurality of pixel circuits includes a light emitting element having a first electrode and ... 02/09/06 - 20060027821 - Gan led structure with p-type contacting layer grown at low-temperature and having low resistivity Disclosed is a GaN LED structure with a p-type contacting layer using Al—Mg-codoped In1-yGayN grown at low temperature, and having low resistivity. The LED structure comprises, from the bottom to top, a substrate, a buffer layer, an n-type GaN layer, an active layer, a p-type shielding layer, and a p-type ... 01/19/06 - 20060011931 - Ic package with an integrated power source A radioactive power source resident in an IC package is provided. The power source is a stand-alone device, fabricated separately from the IC or other device that is eventually attached to the package. The power source may be attached to the packaging substrate or to another portion of the package ... 01/12/06 - 20060006400 - Method of making diode having reflective layer A method of forming a light emitting diode includes forming a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A ... 01/12/06 - 20060006399 - Gallium nitride based ill-v group compound semiconductor device and method of producing the same A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed. ... 01/12/06 - 20060006398 - Nitride-based compound semiconductor light emitting device and fabricating method thereof The nitride-based compound semiconductor light emitting device includes a first ohmic electrode, a bonding metal layer, a second ohmic electrode, a nitride-based compound semiconductor layer, and a transparent electrode stacked in this order on a support substrate, and further includes an ohmic electrode formed on a back side of the ... 12/29/05 - 20050285126 - Led fabrication via ion implant isolation A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the ... 12/29/05 - 20050285125 - Nitride based semiconductor device The present invention provides a nitride semiconductor device comprising an active layer of a quantum well structure, a first conductive clad layer and a second conductive clad layer. The first conductive clad layer is made of the quaternary nitride semiconductor InAlGaN having a lattice constant equal to or larger than ... 12/29/05 - 20050285124 - Micro or below scale multi-layered heteostructure A heteostructure having a first and a second layer, in micrometer or smaller (e.g. nanometer) scale, arranged in a configuration defining at least one undercut at one side of the second layer, underneath the first layer, is described herein. In various embodiments, the undercut is filled with passivation materials to ... 12/15/05 - 20050274965 - Sterilizing method, system, and device utilizing ultraviolet light emitting diodes powered by direct current or solar power in a recreational vehicle or marine environment A method, system, and device for sterilizing a medium such as gas or liquid, by arranging light sources in relation to a container containing the medium, and by then generating ultraviolet (UV) radiation for destroying bacteria or other microorganisms in the medium. The microorganisms are preferably destroyed by interacting with ... 12/15/05 - 20050274964 - Light emitting diode structure Disclosed is a light emitting diode structure including a Constructive Oxide Contact Structure contact layer. The light emitting diode structure comprises a substrate, a buffer layer formed on the substrate, a lower confinement layer formed on the buffer layer, a light emitting layer formed on the lower confinement layer, an ... 12/08/05 - 20050269584 - Nitride semiconductor light-emitting device A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing ... 12/08/05 - 20050269583 - Gallium nitride-based semiconductor light-emitting device and method of fabricatiing the same This invention pertains to a gallium nitride-based semiconductor light-emitting device, in which nano-sized, fine protrusions are formed on an upper surface of a p-type clad layer without a deterioration of crystallinity and electric conductivity to improve light extraction efficiency, and a method of fabricating the same. After a first conductive ... 12/08/05 - 20050269582 - Luminescent ceramic for a light emitting device A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting ... 12/01/05 - 20050263782 - Communication device and digital encoding method thereof The present invention provides a communication device and a digital encoding method thereof. The communication device comprises a first and a second emitting devices respectively communicating at a first and a second communication channels. Each emitting device emits the same piece of data through continually emitting the same signal section ... 12/01/05 - 20050263781 - Polymer buffer layers and their use in light-emitting diodes The present invention is directed to improved transparent electrically conductive buffer layers for light-emitting diodes. The use of an aqueous dispersion containing an electrically conducting polymer and a non-ionic surfactant or an ionic fluorosurfactant to form the buffer layer has been shown to provide a buffer layer that results in ... 12/01/05 - 20050263780 - Light emitting diodes with graded composition active regions A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum ... 12/01/05 - 20050263779 - Gallium nitride based light emitting device and the fabricating method for the same A GaN-based light-emitting device and the fabricating method for the same are described. The light-emitting device is a light-emitting body with a light extraction layer thereon. The light-emitting body has some GaN-based layers and is capable of emitting a light when energy is applied. The light extraction layer is a ... 11/17/05 - 20050253156 - Semiconductor light-emitting device and fabrication method of the same A semiconductor light-emitting device can include a nitride semiconductor light-emitting layer and can supply a current to an entire light-emitting region quickly and efficiently to output high-intensity light. The semiconductor light-emitting device can include: a transparent substrate; a first conductivity type nitride semiconductor layer; a nitride semiconductor light-emitting layer; a ... 11/10/05 - 20050247948 - Light-emitting semiconductor device and method of fabrication A low-resistance silicon baseplate (11) has formed thereon a buffer layer 12 in the form of an alternating lamination of AlN sublayers (12a) and GaN sublayers (12b). On this buffer layer there are formed an n-type semiconductor region (13) of gallium nitride, an active layer (14) of gallium indium nitride, ... 11/03/05 - 20050242357 - Semiconductor light-emitting device Affords semiconductor light-emitting devices in which generation of spontaneous electric fields in the active layer is reduced to enable enhanced brightness. Semiconductor light-emitting device (1) is furnished with an n-type cladding layer (3), a p-type cladding layer (7) provided over the n-type cladding layer (3), and an active layer (5) ... 10/27/05 - 20050236634 - Side-emission type semiconductor light-emitting device and manufacturing method thereof A side-emission type semiconductor light-emitting device 10 includes a substrate 12, and the substrate 12 is provided with a case 14 formed of a resin having opacity and reflectivity. The substrate 12 is formed, on its surface, with electrodes 18a and 18b onto which an LED chip 20 is bonded. ... 10/27/05 - 20050236633 - Substrate buffer structure for group iii nitride devices A semiconductor photonic device and associated method are disclosed. The device includes a substrate and a buffer structure on the substrate. The buffer structure is formed of a discontinuous layer of aluminum gallium nitride and a gallium nitride layer on the aluminum gallium nitride layer having a thickness that functionally ... 10/27/05 - 20050236632 - Vertical electrode structure of gallium nitride based light emitting diode A vertical electrode structure of GaN-based light emitting diode discloses an oxide window layer constructing the GaN-based light emitting diode of vertical electrode structure, which effectively decreases the Fresnel reflection loss and total reflection, and further advances the luminous efficiency. Moreover, the further included metal reflecting layer causes the reflection ... 10/20/05 - 20050230696 - Semiconductor light emitting device and manufacturing method therefor A semiconductor light emitting device of double hetero junction comprising an active layer; and clad layers comprising an n-type layer and p-type layer, the clad layers sandwiching the active layer, a band gap energy of the clad layers being larger than that of the active layer; wherein band gap energy ... 10/20/05 - 20050230695 - Semiconductor light-emitting element and method for manufacturing the same A semiconductor light-emitting element includes a first conductivity-type cladding layer made of an In1-x-yGaxAlyN (0≦x, y≦1) type material; a quantum well active layer including a barrier layer made of an In1-x-yGaxAlyN (0≦x, y≦1) type material and a well layer made of In1-xGaxN (0≦x≦1) material; and a second conductivity type cladding ... 10/20/05 - 20050230694 - Optical device and method of fabricating an optical device An optical device comprising: a first active stack of layers comprising an optical cavity, at least one quantum dot located in said cavity, an upper contact provided above said optical cavity; a lower contact provided below said cavity, wherein an abrupt material interface defines the whole lateral boundary of said ... 10/13/05 - 20050224825 - Production method for light emitting element In a first invention, a p-type MgxZn1-xO-type layer is grown based on a metal organic vapor-phase epitaxy process by supplying organometallic gases which serves as a metal source, an oxygen component source gas and a p-type dopant gas into a reaction vessel. During and/or after completion of the growth of ... 10/13/05 - 20050224824 - Gallium nitride-based semiconductor light-emitting device Provided is a gallium nitride-based semiconductor light-emitting device comprising a sapphire substrate having a nitridated upper surface; a polarity conversion layer formed on the sapphire substrate and made of MgN-based single crystals; a first conductive gallium nitride-based semiconductor layer formed on the polarity conversion layer; an active layer formed on ... 10/06/05 - 20050218415 - Semiconductor light-emitting device A first cladding layer of a first conductivity type formed above a crystal substrate, an active layer formed above the first cladding layer, a diffusion prevention layer formed on the active layer and preventing an impurity from diffusing into the active layer, an overflow prevention layer of a second conductivity ... 10/06/05 - 20050218414 - 4h-polytype gallium nitride-based semiconductor device on a 4h-polytype substrate 4H-InGaAlN alloy based optoelectronic and electronic devices on non-polar face are formed on 4H-AlN or 4H-AlGaN on (11-20) a-face 4H-SiC substrates. Typically, non polar 4H-AlN is grown on 4H-SiC (11-20) by molecular beam epitaxy (MBE). Subsequently, III-V nitride device layers are grown by metal organic chemical vapor deposition (MOCVD) with ... 09/29/05 - 20050212001 - Method for achieving low defect density algan single crystal boules A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during ... 09/29/05 - 20050212000 - Method for manufacturing light emitting device, and electronic device It is an object of the present invention to provide a method for manufacturing a light-emitting device which can reduce the increase of power consumption generated by a stabilization process of the lowering of light-emitting luminance with the passage of emission time. The method for manufacturing the light-emitting device has ... 09/29/05 - 20050211999 - Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures An improved p-type gallium nitride-based semiconductor device is disclosed. The device includes a structure with at least one p-type Group III nitride layer that includes some gallium, a first silicon dioxide layer on the p-type layer, a layer of a Group II metal source composition on the first SiO2layer, and ... 09/15/05 - 20050199895 - Nitride-based light-emitting device and method of manufacturing the same A nitride-based light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer, a grid cell layer and an ohmic contact layer sequentially formed on the substrate. The grid cell layer has separated, conducting particle type ... 09/15/05 - 20050199894 - Semiconductor device and method using nanotube contacts A semiconductor device includes at least one semiconductor layer, a metal layer in electrical contact with the semiconductor layer, and a carbon nanotube contact layer interposed between the metal layer and the semiconductor layer. The contact layer electrically couples the metal layer to the semiconductor layer and provides a semiconductor ... 09/15/05 - 20050199893 - Nitride based semiconductor laser diode device with a bar mask A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the ... 09/08/05 - 20050194602 - Method for fabricating a non-planar nitride-based heterostructure field effect transistor A method for fabricating a non-planar heterostructure field effect transistor using group III-nitride materials with consistent repeatable results is disclosed. The method provides a substrate on which at least one layer of semiconductor material is deposited. An AlN layer is deposited on the at least one layer of semiconductor material. ... 09/01/05 - 20050189553 - Ii-vi compound semiconductor crystal and photoelectric conversion device Since a ZnTe-base compound semiconductor crystal was designed so as to have, on a ZnTe-base compound semiconductor layer, an n-type contact layer which includes a superlattice layer having n-type CdSe and n-type ZnTe grown with each other or a ZnCdSeTe-graded layer, it was made possible to raise carrier concentration of ... 09/01/05 - 20050189552 - Semiconductor light-emitting device A light-emitting device including an active region having a quantum well structure formed by a first barrier layer made of a first III-V compound semiconductor material that contains aluminum, gallium, indium, and arsenic, and a quantum well layer made of a second III-V compound semiconductor material. The device also includes ... 09/01/05 - 20050189551 - High power and high brightness white led assemblies and method for mass production of the same High power and high brightness light emitting diode (LED) assemblies emitting white light are disclosed. The present invention also discloses methods for cost effective mass production of the high power and high brightness LED assemblies with high throughput. ... 08/25/05 - 20050184300 - Light-emitting semiconductor device and method of fabrication An LED includes a semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating heat. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. Attached to the other major surface ... 08/18/05 - 20050179047 - Highly doped iii-nitride semiconductors A method of forming a highly doped layer of AlGaN, is practiced by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AlN layer is grown. The highly doped GaAlN layer ... 08/18/05 - 20050179046 - P-type electrodes in gallium nitride-based light-emitting devices An improved p-type electrode for a p-type gallium-nitride based semiconductor material is disclosed that includes at least one layer of indium-tin-oxide. The electrode can include the indium-tin-oxide layer(s) such that at least one of the indium-tin-oxide layers is in contact with the p-type semiconductor layer. Alternatively, the electrode can further ... 08/18/05 - 20050179045 - Nitride semiconductor light emitting diode having improved ohmic contact structure and fabrication method thereof Disclosed is a nitride semiconductor LED and a fabrication method thereof. An n-doped semiconductor layer, an active layer, a p-doped semiconductor layer and a p+-doped semiconductor layer are formed in their order on a substrate. A resultant semiconductor structure is mesa-etched to expose a partial area of the n-doped semiconductor ... 08/11/05 - 20050173715 - Nitride semiconductor devices and method of their manufacture Affords a manufacturing method enabling nitride-based semiconductor devices containing epitaxial films excelling in flatness and crystallinity to be easily produced, and makes available nitride-based semiconductor devices manufactured by the method. Method of manufacturing nitride semiconductor devices that are formed onto a semiconductor substrate being a compound containing a Group IIIA ... 07/28/05 - 20050161688 - Process for production of nitride semiconductor device and nitride semiconductor device Disclosed herein is a process for production of a nitride semiconductor device having good characteristic properties (such as light-emitting performance). The process does not thermally deteriorate the active layer while nitride semiconductor layers are being grown on the active layer. The process consists of forming an active layer on a ... 07/28/05 - 20050161687 - Optical element, and its manufacturing method To provide an optical element including a surface-emitting type semiconductor laser and an photodetector element, having a desired plurality of dielectric layers, and its manufacturing method. An optical element in accordance with the present invention includes a surface-emitting type semiconductor laser including, above a substrate, a first mirror, an active ... 07/14/05 - 20050151144 - Oxygen-doped al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (pics) In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active ... 07/07/05 - 20050145863 - Oxygen-doped al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (pics) In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active ... 06/16/05 - 20050127382 - Carrier layer for a semiconductor layer sequence and method for producing semiconductor chips A carrier layer (1) for a semiconductor layer sequence comprising an electrical insulation layer (2) containing AlN or a ceramic. Furthermore a method for producing semiconductor chips is described. ... 06/09/05 - 20050121679 - Nitride semiconductor device A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such ... 06/02/05 - 20050116242 - Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip A technique for fabricating an epitaxial component layer sequence based on a first III/V compound semiconductor material system with a first group V element on a substrate or a buffer layer, which comprises a material based on a second III/V compound semiconductor material system with a second group V element, ... ### FreshPatents.com Support |