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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Incoherent Light Emitter Structure > Plural Light Emitting Devices (e.g., Matrix, 7-segment Array) > With Shaped Contacts Or Opaque Masking With Shaped Contacts Or Opaque MaskingWith Shaped Contacts Or Opaque Masking patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.12/06/07 - 20070278505 - Light-emitting diode array, light-emitting diode, and printer head A light emitting diode array in which, when viewed from the above, the shape of an almost square light emitting diode is square-chamfered or round-chamfered at the corners thereof in order to minimize light leakage at a reverse mesa surface to allow an electrode layer to surround the three directions ... 06/07/07 - 20070126013 - Light emitting device and method for fabricating the same A light emitting device and a method for fabricating the same are disclosed, whereby a thin mask film is changed to agglomerates by a simple thermal treatment process, and a plurality of nano openings, each opening spaced a distance apart, are formed in the agglomerates, a light emitting structure exposed ... 12/28/06 - 20060289881 - Semiconductor light emitting device A semiconductor light emitting device including a substrate, a semiconductor light emitting stack, a first electrode, a first transparent oxide conductive layer and a second electrode is provided. The semiconductor light emitting stack is disposed on the substrate and has a first surface region and a second surface region. The ... 12/07/06 - 20060273332 - Nitride semiconductor light emitting device The present invention relates to a nitride semiconductor light emitting device. The nitride semiconductor light emitting device includes a substrate; an n-type nitride semiconductor layer that is formed on the substrate; an active layer that is formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer that is ... 11/23/06 - 20060261358 - Flip chip light emitting diode and method of manufacturing the same The present invention relates to a flip chip light emitting diode in which an n-type electrode is formed on an insulating layer so that a large light emitting area can be secured to thereby enhance a current-spreading effect and in which the n-type electrode serves as a light reflecting layer ... 11/16/06 - 20060255348 - Light emitting diode and manufacturing method thereof A method for fabricating a light emitting diode (LED) is provided. A first-type doped semiconductor layer, a light emitting layer and a second-type doped semiconductor layer are formed on an epitaxy substrate sequentially. Then, a gold layer is formed on the second-type doped semiconductor layer. Next, a bonding substrate is ... 11/09/06 - 20060249740 - Point source light-emitting diode and manufacturing method thereof A point source light emitting-diode (LED) comprises a substrate, an epitaxy structure, a first electrode, an isolation layer, a bonding layer, a contact layer, and a connection bridge. The epitaxy structure is located on the substrate, and the substrate has a pattern including a light emitting area located on the ... 10/26/06 - 20060237732 - Light-emitting device, method for making the same, and nitride semiconductor substrate A light-emitting device is presented which includes a GaN substrate 1; an n-type nitride semiconductor substrate layer (n-type AlxGa1-xN layer 3) disposed on a first main surface side of the GaN substrate 1; a p-type nitride semiconductor substrate layer (p-type AlxGa1-xN layer 5) disposed further away from the GaN substrate ... 09/07/06 - 20060197099 - Semiconductor light emitting device A semiconductor light emitting device can be configured to prevent diffusion migration of components constituting a linear electrode. The semiconductor light emitting device can include a substrate, at least one semiconductor layer formed on the substrate and having a topmost semiconductor layer, a pad electrode formed from a plurality of ... 08/10/06 - 20060175623 - Light-source apparatus and image display apparatus The present invention provides an image display apparatus including a light-source apparatus and a light-source apparatus in which a plurality of light-emitting devices are uniformly cooled to prevent any variation in brightness. The light-source apparatus includes a plurality of light-emitting devices for emitting illumination light, a holding member for holding ... 05/11/06 - 20060097271 - Gan-based radiation-emitting thin-layered semiconductor component A radiation-emitting thin-film semiconductor component with a multilayer structure (12) based on GaN, which contains an active, radiation-generating layer (14) and has a first main area (16) and a second main area (18)—remote from the first main area—for coupling out the radiation generated in the active, radiation-generating layer. Furthermore, the ... 03/02/06 - 20060043392 - Semiconductor light emitting device and manufacturing method for semiconductor light emitting device A semiconductor light emitting device includes a first conductivity-type first semiconductor layer; an emission layer; a second conductivity-type second semiconductor layer; and a second conductivity-type transparent substrate transparent to light beams from the emission layer and directly bonded to the second semiconductor layer. The transparent substrate has a parallel surface ... 01/05/06 - 20060001035 - Light emitting element and method of making same A light emitting element has: a semiconductor layer having a light-emitting layer; a first electrode; a second electrode; an insulation layer that is formed on a mounting face side of the semiconductor layer; and a first terminal and a second terminal that are formed on a surface of the insulation ... 10/13/05 - 20050224823 - High power, high luminous flux light emitting diode and method of making same A high power, high luminous flux light emitting diode (LED) comprises a substrate, a light-emitting structure, a first electrode and a second electrode. The LED has a top surface layout design in which the first electrode has a number of legs extending in one direction, and the second electrode has ... 08/18/05 - 20050179044 - Method for producing a display unit A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A display unit is produced by two-dimensionally arraying ... 07/07/05 - 20050145862 - Light emitting device and manufacturing method thereof Disclosed are a light emitting device and a manufacturing method thereof. A trench portion is formed on a substrate of a light emitting device, and a buffer layer, an n-contact layer, and an active layer are sequentially deposited on the trench portion thereby to increase a light emitting area of ... ### FreshPatents.com Support |