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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Incoherent Light Emitter Structure > In Combination With Or Also Constituting Light Responsive Device > Combined In Integrated Structure Combined In Integrated StructureCombined In Integrated Structure patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.05/24/07 - 20070114543 - Electronic systems using optical waveguide interconnects formed through a semiconductor wafer An integrated circuit with a number of optical waveguides that are formed in high aspect ratio holes. The high aspect ratio holes extend through a semiconductor wafer. The optical waveguides include a highly reflective material that is deposited so as to line an inner surface of the high aspect ratio ... 05/17/07 - 20070108452 - Growth of a semiconductor layer structure A method of growing a semiconductor layer structure comprises growing a first semiconductor layer and incorporating hydrogen into the first semiconductor layer. One or more further semiconductor layers are then grown over the first semiconductor layer to form a semiconductor layer structure. A selected portion of the first semiconductor layer ... 06/29/06 - 20060138434 - Semiconductor optical devices A semiconductor optical device (e.g. a resonant cavity device in this form of an LED or a laser) comprises a single substrate arranged for emitting light (O) for incidence on a sample or other element and also responsive to light (D), e.g. of a different wavelenght, received back from this ... 04/20/06 - 20060081857 - Light emitting device having circuit protection unit A light emitting device having a circuit protection unit is provided. The circuit protection unit has a low-resistance layer and a potential barrier layer, wherein a barrier potential exists at the interface between the low-resistance layer and the potential barrier layer. The circuit protection unit is electrically connected with the ... 03/30/06 - 20060065904 - Display A display includes pixels each of which contains a light emitting element and which are arranged in a matrix form, a light transmitting insulating layer which includes a back surface facing the light emitting element and a front surface as a light output surface, a beam-condensing element which is arranged ... 03/23/06 - 20060060868 - Semiconductor light emitting element and method for fabricating the same Projections/depressions forming a two-dimensional periodic structure are formed in a surface of a semiconductor multilayer film opposing the principal surface thereof, while a metal electrode with a high reflectivity is formed on the other surface. By using the diffracting effect of the two-dimensional periodic structure, the efficiency of light extraction ... 03/16/06 - 20060054903 - Transparent solid-state structure for diagnostics of fluorescently labeled biomolecules Fluorescence modification, meaning either fluorescence enhancement or fluorescence diminishment, is obtained in a transparent layer structure comprised of a substrate, a dielectric layer and a fluorophore-labeled biomolecule layer. A metal particle layer is positioned in the layer structure a distance of 200-500 nm from the fluorophore-labeled biomolecule layer. Separation distances ... 03/16/06 - 20060054902 - Band offset in alingap based light emitters to improve temperature performance Systems and methods for improving the temperature performance of AlInGaP based light emitters. Nitrogen is added to the quantum wells in small quantities. Nitrogen is added in a range of about 0.5 percent to 2 percent. The addition of nitrogen increases the conduction band offset and increases the separation of ... 03/09/06 - 20060049413 - Array substrate with reduced pixel defect, method of manufacturing the same and liquid crystal display panel having the same An array substrate includes a transparent substrate, a switching element, an insulating layer and a pixel electrode. The switching element includes a gate electrode formed on the transparent substrate and connected to a gate line, a channel layer formed on the gate electrode and extended in a first direction, a ... 10/13/05 - 20050224822 - Light-emitting diode array having an adhesive layer A light-emitting diode array includes a substrate, an adhesive layer formed on the substrate, and a plurality of electrically connected epitaxial light-emitting stack layer disposed on the adhesive layer. Each of the epitaxial light-emitting stack layer has a P-contact and an N-contact coplanar to the P-contact. The light-emitting diode array ... 08/18/05 - 20050179042 - Monolithic integration and enhanced light extraction in gallium nitride-based light-emitting devices An integrated light-emitting device includes multiple p-n diodes integrated monolithically on an insulating substrate. The p-n diodes are of monolithic semiconductor materials over the single substrate. The p-n diodes can be all light-emitting diodes or a combination of light-emitting and ESD-protection diodes. The p-n diodes may have at least one ... 08/11/05 - 20050173714 - Lighting system with high and improved extraction efficiency In an epitaxial structure of a solid state lighting system, electrical current injection into the active layer is used to excite the photon emission. The present invention employs a unique waveguide layer in the epitaxial structure for trapping the light generated by the active layer in the fundamental waveguide mode. ... 06/16/05 - 20050127380 - Transistor and semiconductor device A transistor is provided, which is entirely and partially transparent by the use of a transparent channel layer made of zinc oxide or the like. A channel layer 11 formed of a transparent semiconductor such as zinc oxide ZnO. A transparent electrode is used for all of a source 12, ... 06/16/05 - 20050127379 - Light emitting or light receiving semiconductor module and method for manufacturing same A solar module 20 comprises first and second sheets 21 and 22, a plurality of rows (a plurality of groups) of spherical solar cells 11 incorporated in between these sheets 21 and 22 in a state in which the conduction direction is perpendicular to the surface of the sheets, a ... ### FreshPatents.com Support |