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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Incoherent Light Emitter Structure > In Combination With Or Also Constituting Light Responsive Device In Combination With Or Also Constituting Light Responsive DeviceIn Combination With Or Also Constituting Light Responsive Device patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.09/27/07 - 20070221931 - Optoelectronic semiconductor device and light signal input/output device A optoelectronic semiconductor device, mountable on and electrically connectable to an electro-optical wiring board, a substrate thereof having a light input/output through-hole and electric connection through-holes, the light input/output through-hole being not formed in a stressed area of the circuit wiring board, but formed in a non-stressed area of the ... 09/27/07 - 20070221930 - Apparatus comprising a single photon photodetector having reduced afterpulsing and method therefor A single-photon detector is disclosed that provides reduced afterpulsing without some of the disadvantages for doing so in the prior art. An embodiment of the present invention provides a stimulus pulse to the active area of an avalanche photodetector to stimulate charges that are trapped in energy trap states to ... 09/20/07 - 20070215883 - Electroluminescent devices, subassemblies for use in making electroluminescent devices, and dielectric materials, conductive inks and substrates related thereto Electroluminescent devices, subassemblies for use in making electroluminescent devices, and dielectric materials, conductive inks and substrates for use in making such subassemblies. One such electroluminescent device includes a first subassembly having an emitter layer for emitting light upon the application of an electric field and a first conductive layer adjacent ... 09/06/07 - 20070205421 - Semiconductor optical devices and method for forming A semiconductor optical device includes an insulating layer, a photoelectric region formed on the insulating layer, a first electrode having a first conductivity type formed on the insulating layer and contacting a first side of the photoelectric region, and a second electrode having a second conductivity type formed on the ... 09/06/07 - 20070205420 - Electroluminescent display devices An active matrix display device comprises an array of display pixels provided over a common substrate (60). Each pixel has an upwardly emitting current-driven light emitting display element (2) comprising a lower electrode (74) and an upper substantially transparent electrode (80a. A light sensitive device (27) for sensing the display ... 05/31/07 - 20070120133 - Semiconductor light emitting apparatus Disclosed herein is a semiconductor light emitting apparatus that includes: a semiconductor light emitting device having a first semiconductor laminate structure including a light emitting region, and a light outgoing window permitting the light emitted from the light emitting region to go out therethrough in the lamination direction; a light ... 04/19/07 - 20070085088 - Component of a radiation detector comprising a substrate with positioning structure for a photoelectric element array In the component of a radiation detector, an upper end face of a pad formation protrusion provided on an upper surface of an MID substrate is equal in height to an upper surface of a photodiode array, first pads are provided on upper surfaces of photodiodes arranged in the photodiode ... 03/22/07 - 20070063202 - Method for producing electronic components In order to achieve an integration of functional structures into the housing of electronic components, provision is made of a method for producing an electronic component comprising at least one semiconductor element having at least one sensor-technologically active and/or emitting device on at least one side, the method comprising the ... 02/01/07 - 20070023764 - Cmos image sensor and method of fabricating the same A CMOS image sensor and a method of fabricating the same are provided. In the CMOS image sensor, a device isolation layer is formed in a substrate to define an active region, and a photodiode is formed in the active region. A floating diffusion region is formed at a position ... 01/25/07 - 20070018174 - Light emission from semiconductor integrated circuits Structures and methods to inject electrons into an insulator from a semiconductor layer that are then collected in a thin layer of a direct semiconductor material which in turn emits light by bandgap recombination. ... 01/18/07 - 20070012930 - High brightness light-emitting device and manufacturing process of the light-emitting device A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent passivation layer laid over an outmost surface of the multi-layer stack, a reflector layer laid over the passivation layer, and a plurality ... 12/07/06 - 20060273331 - Two-terminal led device with tunable color A two-terminal light-emitting diode (“LED”) device has a first terminal and a second terminal, and a first color LED and a second color LED. An intensity control device is coupled to the first color LED and a control circuit controls the intensity control device so as to produce a selected ... 11/23/06 - 20060261356 - Semiconductor device A semiconductor device having a GaN-based main semiconductor region formed on a silicon substrate via a buffer region. Source, drain and gate electrodes are formed on the main semiconductor region, and a back electrode on the back of the substrate. The substrate is constituted of two semiconductor regions of opposite ... 11/09/06 - 20060249738 - Surface-emitting semiconductor laser comprising a structured waveguide A surface-emitting semiconductor laser includes an active zone, the active zone having a p-n-junction and surrounded by a first n-doped semiconductor layer and at least one p-doped semiconductor layer; a tunnel contact layer on the p-side of the active zone; an n-doped current-carrying layer that covers the tunnel contact layer, ... 09/14/06 - 20060202212 - Semiconductor optical device A semiconductor optical device comprises a lower cladding layer of a first conductive type, an upper cladding layer of a second conductive type, and an active layer. The lower cladding layer has a first region and a second region. The first region extends in a direction of a predetermined axis, ... 08/31/06 - 20060192215 - Light emitting device and light emitting system A light emitting device in accordance with the present invention includes a light emitting element and a light sensor for detecting the luminous intensity of the light emitted from the light emitting element. The light emitting element includes a lower electrode, a light emitting material layer including at least a ... 07/06/06 - 20060145166 - Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB2, in which X includes at least one of Ti, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlyGa1-yN (0<y≦1), and a ... 05/25/06 - 20060108590 - Group iii-v nitride series semiconductor substrate and assessment method therefor The group III-V nitride series semiconductor substrate has good-product yield when the band-edge peak light-emission intensity ratio α=N1/N2 is α<1, where N1 is a band-edge peak light-emission intensity at an arbitrary photoluminescence measurement position on the front side of the substrate, and N2 is a band-edge peak light-emission intensity on ... 03/16/06 - 20060054901 - Optical semiconductor device, method for fabricating the same, lead frame and electronic equipment An optical semiconductor element 2 is mounted on a lead frame 1, the optical semiconductor element 2 is encapsulated with a mold resin portion 14 of a first layer that has light permeability, and the mold resin portion 14 of the first layer is encapsulated with a mold resin portion ... 03/16/06 - 20060054900 - Compound semiconductor device epitaxial growth substrate, semiconductor device, and manufacturing method thereof A compound semiconductor device epitaxial growth substrate, wherein a semiconductor substrate, a substrate protective layer made of a material that is different from the material of the substrate, a middle layer for making separation of the semiconductor substrate and a compound semiconductor device layer possible, and a compound semiconductor device ... 03/16/06 - 20060054899 - Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device An integrated semiconductor optical-emitting device includes a surface-emission laser diode and an EA-type semiconductor optical modulator integrated commonly on a GaAs substrate in a direction perpendicular to the GaAs substrate. ... 03/09/06 - 20060049412 - Cmos image sensor and method for fabricating the same Disclosed are a complementary metal oxide semiconductor (CMOS) device and a method for fabricating the same. The CMOS image sensor includes: a photodetector; a microlens formed on the photodetector; an insulating passivation layer formed on the microlens to protect the microlens; and an oxide layer with a refraction index lower ... 03/02/06 - 20060043388 - Reflective electrode and compound semiconductor light emitting device including the same Provided are a reflective electrode and a compound semiconductor light emitting device, such as an LED or an LD, including the same. The reflective electrode, which is formed on a p-type compound semiconductor layer, includes: a first electrode layer forming an ohmic contact with the p-type compound semiconductor layer; a ... 02/16/06 - 20060033113 - Nitride semiconductor light emitting diode and method of manufacturing the same The present invention provides a flip chip-type nitride semiconductor light emitting diode. The nitride semiconductor light emitting diode comprises a light transmittance substrate, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer and a mesh-type DBR reflecting layer. The mesh-type DBR reflecting layer has a plurality ... 02/02/06 - 20060022205 - Image sensor with improved charge transfer efficiency and method for fabricating the same An image sensor includes: a first impurity region of the first conductive type aligned with one side of the gate structure and extending to a first depth from a surface portion of the semiconductor layer; a first spacer formed on each sidewall of the gate structure; a second impurity region ... 12/08/05 - 20050269577 - Surface treatment method and surface treatment device The present invention is conceived in order to accomplish an object of providing a surface treatment method and a surface treatment device that can planarize, at high speed, the surface of a nitride semiconductor with an excellent evenness. The surface treatment device includes an electrolyte supply port 15 for supplying ... 10/27/05 - 20050236630 - Transparent contact for light emitting diode A transparent conductive film is deposited between the electrode and semiconductor diode to spread the current evenly, reduce the series resistance and increase light transmittance at certain wavelength. ZnO film can be used as the transparent conductive film. The Ni/Au/ZnO film is found to have an increased light transmission compared ... 10/06/05 - 20050218413 - Image exposure device and laser exposure device applied thereto When a ratio R between a total angle φ of a widening angle in a median intensity of light of a light source (a GaN based semiconductor laser) and a total angle 2/φ of a widening angle of light defining a numerical aperture NA of a collimator optical system (collimator ... 09/29/05 - 20050211995 - High-efficiency light-emitting element A high-efficiency light-emitting element includes a substrate, a first nitride semiconductor layer formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor layer, and a second nitride semiconductor layer formed on the nitride light-emitting layer including a plurality of hexagonal-pyramid cavities on the surface of the ... 09/22/05 - 20050205879 - Photoelectric converting film stack type solid-state image pickup device A photoelectric converting film stack type solid-state image pickup device comprising: a semiconductor substrate in which a signal read circuit is formed; and at least one photoelectric converting film interposed between two electrode films, said at least one photoelectric converting film being stacked above the semiconductor substrate, wherein a signal ... 09/22/05 - 20050205878 - Apparatus for forming an asymmetric illumination beam pattern The present invention provides an apparatus for forming an asymmetric illumination beam pattern that can be advantageous when illuminating channel letters in addition to enabling the creation of cove lighting, as well as other applications benefiting from asymmetric illumination patterns. The apparatus comprises one or more light-emitting elements for creating ... 09/15/05 - 20050199890 - Device with a radiation-emitting semiconductor component and procedure for the temperature stabilization of a radiation-emitting semiconductor component A device having at least one radiation-emitting semiconductor component (1), the semiconductor component being assigned at least one electrical heating element (2) designed for heating the semiconductor component. Furthermore, a method for the temperature stabilization of the operating temperature of a radiation-emitting semiconductor component (1) of a device is specified, ... 08/18/05 - 20050179041 - Illumination system with leds The luminance of a system that includes a light emitting diode (LED), such as a projection system, may be increased by using an LED chip that has a light emitting surface that emits light directly into any medium with a refractive index of less than or equal to approximately 1.25. ... 08/11/05 - 20050173711 - Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates A method for forming a MEMS device is disclosed, where a final release step is performed just prior to a wafer bonding step to protect the MEMS device from contamination, physical contact, or other deleterious external events. Without additional changes to the MEMS structure between release and wafer bonding and ... 07/21/05 - 20050156181 - White-light led and method for regulating the generated light color of the white-light led A white-light light emitting diode (LED) and a method for regulating the generated light color of the LED, wherein the LED has at least one InGaN chip and at least one AlGaInP chip. When forward bias voltages are applied on the InGaN chip or AlGaInP chip, blue light and green-yellow ... 07/14/05 - 20050151140 - Semiconductor light emitting device and plant cultivating system Guard electrodes 2 which are electrically connected with a conductive portion of a cooling water passage 23 through connection lines 3 are respectively provided in the middle of a water inlet pipe 1 connected with a water inlet master pipe 10 and a water outlet pipe 6 connected with a ... 06/23/05 - 20050133800 - Solid state lighting device A light assembly for use with a low voltage power source. The light assembly semiconductor photo-emitters are electrically in series with a higher forward voltage drop than the associated low voltage power supply. To provide the necessary voltage the light assembly includes a current regulated step-up DC/DC converter. The semiconductor ... 06/16/05 - 20050127376 - Active matrix electroluminescent display devices, and their manufacture Physical barriers (210) are present between neighbouring pixels (200) on a circuit substrate (100) of an active-matrix electroluminescent display device, particularly with LEDs (25) of organic semiconductor materials. The invention forms these barriers (210) with metal or other electrically-conductive material (240) that serves as an interconnection between a first circuit ... ### FreshPatents.com Support |