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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Incoherent Light Emitter Structure Incoherent Light Emitter StructureIncoherent Light Emitter Structure patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/31/08 - 20080023708 - Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device Affords a semiconductor light-emitting device in which a decrease in external quantum efficiency has been minimized even at high current densities. In a semiconductor light-emitting device (11), a gallium nitride cladding layer (13) has a threading dislocation density of 1×107 cm−2 or less. An active region (17) has a quantum ... 01/24/08 - 20080017869 - Light emitting diode chip with large heat dispensing and illuminating area A light emitting diode chip has a large area of electricity conducting layer applied to each of the P pole and the N pole. The etching process does not reduce the illuminating area so that the areas of illumination and reflection are increased and the efficiency for dispensing heat is ... 01/24/08 - 20080017868 - Semiconductor laser having protruding portion A semiconductor laser device including: semiconductor layers including an n-type semiconductor layer, an active layer and a p-type semiconductor layer, the semiconductor layers having a stripe-shaped waveguide region formed therein; end face protective film formed on the end face of the semiconductor layer that is substantially perpendicular to the waveguide ... 12/13/07 - 20070284593 - Nitride-based semiconductor light emitting diode A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer, the ... 12/13/07 - 20070284590 - Light emitting element and manufacturing method thereof A light emitting device having little variation in the intensity of light emitted from the light emitting surface is provided. The light emitting device of exemplary embodiments of the present invention 2 includes a laminated body with a first conductivity type layer and a second conductivity type layer, with a ... 12/13/07 - 20070284588 - Follicle stimulating hormone supreagonists A plurality of semiconductor layers including a light-emitting layer (14) are formed on the main surface of a substrate (10) which is composed of a group III-V nitride semiconductor. A first n-type semiconductor layer (12) containing indium is formed between the light-emitting layer (14) and the substrate (10), thereby reducing ... 11/29/07 - 20070272932 - Light-emitting diode with improved ultraviolet light protection The present application relates to a semiconductor device comprising one or more protective layers, and more specifically to a light-emitting diode comprising one or more ultraviolet protective layers. The use of said UV protective layers prevents the degradation of a LED by UV light. This results in a LED with ... 11/29/07 - 20070272931 - Methods, devices and systems producing illumination and effects A device has a plurality of ultra-small resonant structures, each of said structures constructed and adapted to emit light at a particular wavelength when a beam of charged particles is passed nearby, wherein at least one of the light emitters emits light in a first range of wavelengths and wherein ... 11/29/07 - 20070272930 - Light-emitting diode package A light-emitting diode package (LED package) includes a LED and a carrier. The LED includes a substrate, a semiconductor layer, a first electrode and a second electrode. The semiconductor layer is located on a surface of the substrate and has a rough surface. The semiconductor layer includes a first-type doped ... 11/22/07 - 20070267636 - Gallium-nitride based light-emitting diode structure with high reverse withstanding voltage and anti-esd capability An epitaxial structure for GaN-based LEDs to achieve better reverse withstanding voltage and anti-ESD capability is provided herein. The epitaxial structure has an additional anti-ESD thin layer as the topmost layer, which is made of undoped indium-gallium-nitrides (InGaN) or low-band-gap (Eg<3.4 eV), undoped aluminum-indium-gallium-nitrides (AlInGaN). The anti-ESD thin layer could ... 11/15/07 - 20070262327 - Semiconductor device using buried oxide layer as optical wave guides A semiconductor optical wave guide device is described in which a buried oxide layer (BOX) is capable of guiding light. Optical signals may be transmitted from one part of the semiconductor device to another, or with a point external to the semiconductor device, via the wave guide. In one example, ... 11/15/07 - 20070262326 - Led multi-layer metals primary electrodes manufacturing process & installation Primary electrodes process and installation for manufacturing of LED multi-layer metals comprised of having epitaxial wafer cleaned up and placed in the manufacturing installation to undergo multi-metal electrodes process; installation include a loader, a magnetic device, a carrier, a magnetic mask, and multiple-layer metal sources for epitaxial wafer loaded by ... 11/15/07 - 20070262325 - Light emitting diode and wavelength converting material A wavelength converting material including a wavelength converting activator and a scatter is provided. The wavelength converting activator is suitable for being activated by a light with a wavelength λ1, so as to emit a light with a wavelength λ2. The scatter is disposed on the wavelength converting activator. The ... 11/08/07 - 20070257267 - Led extractor composed of high index glass An LED extractor has an input surface adapted to optically couple to an emitting surface of an LED die, and is composed of a glass (including a glass-ceramic) material whose refractive index is at least 2, or at least 2.2. ... 11/08/07 - 20070257266 - Led package with converging optical element The present application discloses a light source comprising an LED die having an emitting surface and an optical element including a base, an apex smaller than the base, and a converging side extending between the base and the apex, wherein the base is optically coupled to and is no greater ... 11/01/07 - 20070252155 - Composite electrode for light-emitting device A multi-layer composite electrode for a light-emitting device, comprising: a transparent, conductive layer; a reflective, conductive layer in electrical contact with the transparent, conductive layer; and a light-scattering layer formed between the transparent, conductive layer and the reflective, conductive layer over only a first portion of the transparent, conductive layer, ... 10/25/07 - 20070246713 - Light source and method for producing a light source The invention relates to a light source comprising at least one p-n-junction which is formed by the arrangement of two suitable semi-conductor materials for the induced emission of light. Said light source is embodied and improved in such a manner that at least one of the semi-conductor materials is in ... 10/25/07 - 20070246711 - Multi-directional light scattering led and manufacturing method thereof A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed ... 10/18/07 - 20070241344 - Semiconductor light emitting device For a semiconductor light emitting device using GaInNAs as an active layer, since GaInNAs includes N, the critical thickness is reduced and it is difficult to lengthen the wavelength of a laser beam. A semiconductor light emitting device is prepared, which has an active layer comprising a quantum well layer ... 10/18/07 - 20070241343 - Photo coupler A photo coupler includes a semiconductor laser, a semiconductor light-receiver, a resin protector, a reflective film, a light pipe, and electrodes. The light pipe is made of resin, has a rectangular parallelepiped shape, and is provided so as to surround an outer circumferential portion of the semiconductor light-receiver. On a ... 10/18/07 - 20070241342 - Semiconductor light emitting device In at least one aspect, a semiconductor light emitting device may include a first lead, a second lead provided being apart from the first lead, a semiconductor light emitting element provided on the first lead, a wiring electrically connecting the semiconductor light emitting element and the second lead, a first ... 10/18/07 - 20070241340 - Micro-mirror based display device having an improved light source A display device includes one or more light emitting diodes (LEDs) configured to emit light and a spatial light modulator comprising one or more tiltable micro mirrors each configured to receive the light emitted from the one or more LEDs and reflect the emitted light in two or more directions. ... 10/18/07 - 20070241339 - Light-emitting diode with low thermal resistance A light-emitting diode (LED) structure providing an improved heat transfer path with a lower thermal resistance than conventional LEDs without significantly deviating from the conventional dimensions is described. For some embodiments, a light-emitting diode structure is illustrated that includes a lead frame that is substantially exposed for low thermal resistance ... 10/11/07 - 20070235740 - Organic light emitting device and method of fabricating the same An organic light emitting device is formed by assembling a first substrate and a second substrate. The second substrate includes several sub-pixels. The first substrate includes several transistors and, for each subpixel, a first connecting electrode. The transistors are electrically connected to each other, and the first connecting electrode is ... 10/11/07 - 20070235739 - Structure of heat dissipation of implant type light emitting diode package and method for manufacturing the same A structure of heat dissipation of implant type light emitting diode package having a heat column and a method of manufacturing the same include a substrate, a heat column, and a light emitting diode chip, and the heat column is implanted directly onto a predetermined position of the light emitting ... 10/11/07 - 20070235738 - Nanowire light emitting device and method of fabricating the same A nanowire light emitting device and method of fabricating the same. The nanowire light emitting device includes: a substrate; a first electrode layer formed on the substrate; a plurality of nanowires vertically formed on the first electrode layer, the nanowire having a p-type doped portion and an n-type doped portion ... 10/04/07 - 20070228395 - Semiconductor light emitting element and method for fabricating the same The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer. ... 10/04/07 - 20070228391 - Light emitting device A light emitting device has an LED (light emitting diode) element, and a power feeding member through which electrical power is fed to the LED element, the power feeding member comprising an electrically conductive material. The power feeding member has a light reflecting layer formed on the surface of the ... 10/04/07 - 20070228387 - Uniform emission led package An emitter package comprising a light emitting diode (LED) mounted to the surface of a submount with the surface having a first meniscus forming feature around the LED. A matrix encapsulant is included on the surface and covering the LED. The outer edge of the matrix encapsulant adjacent the surface ... 10/04/07 - 20070228386 - Wire-bonding free packaging structure of light emitted diode A wire-bonding free packaging structure for light emitting diode (LED) is provided. Prepare a silicon sub-mount having a backside bulk micromachining reach-through U-shape cavity for accommodating a flip-chip LED. This stack-integrated packaging module with solder bumps on the surface is than bonded to an aluminum PC board with flip-chip surface ... 10/04/07 - 20070228385 - Edge-emitting light emitting diodes and methods of making the same An edge-emitting light emitting diode (EELED) and methods are described. The EELED includes contact layer, a first carrier confinement layer coupled to the contact layer, an active region optically coupled to the first carrier confinement layer. The active region includes an aluminum gallium nitride based material. Further, the EELED includes ... 09/27/07 - 20070221926 - Passivating layer for flexible electronic devices An electronic device which comprises a first electrode, a second electrode, an active polymer layer between the first and the second electrodes, and a passivating layer adapted to enhance the lifetime of the electronic device. The passivating layer comprises a substantially amorphous titanium oxide having the formula of TiOx where ... 09/20/07 - 20070215881 - Light-emitting element and manufacturing method thereof It is an object of the present invention to provide a new light-emitting element and manufacturing method thereof in which actively diffusing a material into a film formation layer is utilized where an interface state and interdiffusion between a compound semiconductor substrate and a film formation layer formed thereover are ... 09/20/07 - 20070215880 - Light emitting material, light emitting element, light emitting device and electronic device The present invention provides a light emitting material having high electric conductivity, and further a light emitting element which can be driven at low voltage. Light emitting devices and electronic devices with reduced power consumption can also be provided. A light emitting element including a light emitting material is provided ... 09/20/07 - 20070215879 - Opto-electronic devices exhibiting enhanced efficiency wherein R1-R4 are independently at each occurrence a C1-C20 aliphatic radical, a C3-C20 cycloaliphatic radical, or a C3-C20 aromatic radical is disclosed and wherein X+ is selected from the group consisting of monovalent inorganic anions, monovalent organic anions, polyvalent inorganic anions, polyvalent organic anions, and mixtures thereof. ... 09/13/07 - 20070210320 - Light emitting element and production method thereof A light emitting element having a light emitting element portion formed of a group III nitride-based compound semiconductor and having a layer to emit light. The light emitting element portion is formed by lifting off a substrate by wet etching after the light emitting element portion is grown on the ... 09/13/07 - 20070210318 - Light emitting diode with metal coupling structure An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at least one p-type layer, and means for providing a non-rectifying conductive path between the p-type layer and the n-type layer ... 08/30/07 - 20070200122 - Light emitting device and method of manufacturing the same A light emitting device having improved light extraction efficiency is disclosed. The light emitting device includes a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked, a portion of the first semiconductor layer being exposed to the outside by ... 08/30/07 - 20070200121 - Multi-colored led array with improved color uniformity A backlight uses an array of red, green, and blue LEDs in a mixing chamber. The mixing chamber has reflecting surfaces and a top opening for illuminating LCD layers. The LEDs are arranged in clusters of red, green, and blue LEDs, where there are at least two types of clusters ... 08/30/07 - 20070200120 - Light emitting diode chip with double close-loop electrode design An LED chip with double close-loop electrode design includes a substrate, a first-type doped semiconductor layer, a light emitting layer, a second-type doped semiconductor layer, a first electrode and a second electrode. The first-type doped semiconductor layer is disposed on the substrate, the light emitting layer is disposed on the ... 08/30/07 - 20070200119 - Flip-chip led package and led chip A light emitting diode (LED) chip mainly includes a substrate, a first type doped semiconductor layer, light-emitting layers, second type doped semiconductor layers, a first electrode and second electrodes. The first type doped semiconductor layer is disposed on the substrate and includes protrusions which is upward extended; the light-emitting layers ... 08/30/07 - 20070200118 - Led light confinement element An optical assembly includes a reflective layer, an optical element covering at least a portion of the reflective layer, and an LED having a light-emitting axis and disposed to emit light between the optical element and the reflective layer. The optical element has a rotationally symmetric funnel-shaped recess in substantial ... 08/23/07 - 20070194324 - Vertical gallium-nitride based light emitting diode A vertical GaN-based LED is provided. The vertical GaN-based LED includes: an n-electrode; an n-type GaN layer formed under the n-electrode; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer, the p-type GaN layer having a first uneven structure formed on ... 08/16/07 - 20070187700 - Method of manufacturing group iii nitride substrate and semiconductor device The present invention provides a method of manufacturing a Group III nitride substrate that has less variations in in-plane carrier concentration and includes crystals grown at a high growth rate. The manufacturing method of the present invention includes: (i) forming a semiconductor layer (a seed layer 12) on a substrate, ... 08/16/07 - 20070187697 - Nitride based mqw light emitting diode having carrier supply layer A MQW LED structure is provided herein, which contains a carrier supply layer joined to a side of the MQW light emitting layer to provide additional carriers for recombination and to avoid/reduce the use of impurity in the light emitting layer. The carrier supply layer contains multiple and interleaving well ... 08/16/07 - 20070187696 - Semiconductor light emitting device A semiconductor light emitting device including a transparent compound semiconductor substrate whose lattice constant is inconsistent with the compound semiconductor emitting the light and exhibiting high light output is obtained. A semiconductor light emitting device includes a GaP substrate, an active layer located above GaP substrate and including an n-type ... 08/09/07 - 20070181890 - Light emitting device An object of the invention is to provide a technique for improving the characteristics of a TFT and realizing an optimum structure of the TFT for the driving conditions of a pixel section and a driving circuit by a small number of photo masks. Therefore, a light emitting device has ... 08/09/07 - 20070181887 - Display device In a stacked display device with light-emitting units composed of organic layers and stacked together, the use of a stable material in at least a portion of a charge generation layer makes it possible to achieve improvements in environmental stability and also to attain an improvement in the efficiency of ... 08/02/07 - 20070176184 - Organic light-emitting display An organic light-emitting display (OLED) includes a first substrate, a first organic light-emitting pixel area, a first driver, a second substrate, a system circuitry, and a conductive member. The second substrate is opposite to the first substrate. The first organic light-emitting pixel area is defined on the first substrate and ... 08/02/07 - 20070176183 - Voltage controlled light source and image presentation device using the same A device (300) includes a driver circuit (200) having a field effect transistor (FET) (30), acting as a current sink, a current sense network (10), an operational amplifier (opamp) (20), and a light emitting diode (LED) (40). Current sense network (10) is connected to the source electrode (32) of FET ... 08/02/07 - 20070176182 - Structure for integrating led circuit onto heat-dissipation substrate A structure for integrating LED circuit onto a heat-dissipation substrate is disclosed. At least an electronic component and a LED chip are integrated on a heat-dissipation substrate. The electronic component can be a passive component, a drive chip, an electrostatic discharge protection device, or a sensing component. Therefore, both wire-bonding ... 08/02/07 - 20070176181 - Compound semiconductor light-emitting device and production method thereof An object of the present invention is to provide a compound semiconductor light-emitting device having side surfaces of large surface area to improve the efficiency for outwardly transmitting the emitted light. Another object of the present invention is to provide a technology capable of easily forming the side surfaces with ... 07/26/07 - 20070170442 - Nitride-based semiconductor light-emitting device and method of fabricating the same A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover ... 07/19/07 - 20070164295 - Light emitting device and electronic apparatus A light emitting device which is capable of suppressing deterioration by diffusion of impurities such as moisture, oxygen, alkaline metal and alkaline earth metal, and concretely, a flexible light emitting device which has light emitting element formed on a plastic substrate. On the plastic substrate, disposed are two layers and ... 07/12/07 - 20070158662 - Two-dimensional photonic crystal led A two-dimensional photonic crystal LED composed of a p-type semiconductor cladding layer 12, an active layer 11 of light-emitting material, and an n-type semiconductor cladding layer 13 placed between a pair of electrodes, where air holes 16 penetrating through the layers 12, 11 and 13 and arranged periodically in the ... 07/12/07 - 20070158661 - Zno nanostructure-based light emitting device ZnO nanostructure-based LEDs are provided to improve the emission efficiency. The devices include several configurations. Single crystal ZnO or MgxZn1−xO nanotips are grown on the top of a GaN p-n junction. Also, n-type ZnO nanotips are grown on p-GaN film to form an n-type ZnO nanotip/p-GaN heterojunction LED. A ZnO ... 07/12/07 - 20070158660 - Optically active compositions and combinations of same with ingan semiconductors New combinations of semiconductor devices in conjunction with optically active materials are set forth herein. In particular, light emitting semiconductors fashioned as diodes from indium gallium nitride construction are combined with high-performance optically active Langasite La3Ga5SiO14 crystalline materials. When Langasite is properly doped, it will respond to the light output ... 07/12/07 - 20070158659 - Semiconductor structure comprising active zones A semiconductor structure with active zones, such as light diodes or photodiodes, including a substrate (SUB) with at least two active zones (AZ1-AZn), each of which emits or absorbs a radiation of differing wavelength. According to the invention, a multi-wavelength diode may be achieved, in which a first (lower) active ... 07/05/07 - 20070152226 - Led lamps A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to ... 06/28/07 - 20070145386 - Semiconductor light emitting device and method of manufacturing the same Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an ... 06/28/07 - 20070145385 - Semiconductor light emitting device and semiconductor light emitting apparatus A first semiconductor light emitting device comprises: a transparent substrate; a light emitting layer; and a roughened region. The transparent substrate has a first major surface and a second major surface, and is translucent to light in a first wavelength band. The light emitting layer is selectively provided in a ... 06/28/07 - 20070145384 - Iii-nitride light emitting device with double heterostructure light emitting region In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm3 and 5×1019 cm−3. A second spacer layer, ... 06/28/07 - 20070145383 - High luminance light emitting diode and liquid crystal display device using the same A light emitting diode (LED) is provided with a base substrate, a plurality of light emitting chips disposed on the upper surface of the base substrate and electrically coupled in parallel to one another, and a fluorescent material layer for covering the light emitting chips. ... 06/28/07 - 20070145381 - Semiconductor light-emitting device A light-emitting diode has: a substrate; a light-emitting layer having a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer stacked sequentially on a front side of the substrate; a first current-blocking portion partially formed in the middle on the light-emitting layer; a current-conducting ... 06/28/07 - 20070145380 - Low optical loss electrode structures for leds An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from ... 06/28/07 - 20070145379 - Optimized contact design for thermosonic bonding of flip-chip devices A light emitting device (A) includes a semiconductor die (100). The semiconductor die includes: an epitaxial structure (120) arranged on a substrate (160), the epitaxial structure forming an active light generating region (140) between a first layer (120n) on a first side of the active region and having a first ... 06/21/07 - 20070138483 - Conducting polymer composition and electronic device including layer obtained using the conducting polymer composition where A and a are the same as described in the detailed description of the invention. The electronic device including the layer formed using the conducting polymer composition has excellent electrical characteristics and long lifetime. ... 06/14/07 - 20070131943 - Active matrix electroluminescence device having a metallic protective layer and method for fabricating the same An active matrix electroluminescence display device and a method for fabricating the same, whereby damage caused by UV light rays during the fabrication process can be prevented, are disclosed. The active matrix electroluminescence display device includes a plurality of transistors formed on a substrate having an emissive area and a ... 06/14/07 - 20070131942 - Ac light emitting assembly and ac light emitting device An alternating current (AC) light emitting assembly and an AC light emitting device are disclosed. The AC light emitting assembly includes a substrate; a rectifier unit comprising a plurality of rectifier components arranged in a Wheatstone Bridge, for rectifying an AC signal into a direct current (DC) signal, each of ... 06/14/07 - 20070131941 - Light emitting device having high optical output efficiency A light emitting device includes a lower semiconductor layer of a first conductivity type; an optical emission layer formed on said lower semiconductor layer; an upper semiconductor layer of a second conductivity type opposite to said first conductivity type, said upper semiconductor layer being formed on said optical emission layer; ... 06/14/07 - 20070131940 - Color-mixing led A color-mixing LED is disclosed. Fluorescent powders are mixed with an adhesive to form a thin plate. A segmentation process is then performed on the thin plate. A chip is coupled to a concave bracing frame, and then the segmented thin plate is mounted in the concave bracing frame against ... 06/14/07 - 20070131939 - Semiconductor laser and method for manufacturing the same A semiconductor lamination portion (9) including an active layer (4) is formed on a substrate (1). The semiconductor lamination portion is made of, for example, a nitride material having a cleavage plane not parallel to a cleavage plane of the substrate (1) and has a resonance cavity end faces (6) ... 06/07/07 - 20070126010 - Photonic device with integrated hybrid microlens array A microlens structure is mounted directly onto the upper surface of a packaged VCSEL device and positioned to locate microlenses directly over corresponding VCSEL elements. The microlens structure includes a block-like pedestal having a lower surface that faces the upper surface of the VSCEL device. The microlenses are formed in ... 06/07/07 - 20070126009 - Group-iii nitride semiconductor device The inventive Group III nitride semiconductor element comprises a substrate; a first nitride semiconductor layer composed of AlN which is provided on the substrate; a second nitride semiconductor layer composed of Alx1Ga1-x1N (0≦x1≦0.1) which is provided on the first nitride semiconductor layer; and a third nitride semiconductor layer composed of ... 06/07/07 - 20070126008 - Gallium nitride-based compound semiconductor light-emitting device, positive electrode for the device, light-emitting diode and lamp using the device An object of the present invention is to provide a flip-chip-type gallium nitride compound semiconductor light-emitting device exhibiting excellent ohmic characteristics, excellent bonding characteristics, and high emission output. The inventive flip-chip-type gallium nitride compound semiconductor light-emitting device comprises a positive electrode which has a three-layer structure comprising an ohmic electrode ... 05/31/07 - 20070120132 - Manufacturing method of light emitting device and manufacturing device thereof The present invention provides a structure in which a pixel region 13 is surrounded by a first sealing material (having higher viscosity than a second sealing material) 16 including a spacer (filler, minute particles and/or the like) which maintains a gap between the two substrates, filled with a few drops ... 05/31/07 - 20070120131 - Semiconductor device In a photodetector where a circuit section, in which an interconnection is formed, is formed adjacent to a light receiving section, photo sensitivity within a light receiving surface is prevented from being nonuniform due to an interlayer insulating film at a periphery of the light receiving section being increased in ... 05/31/07 - 20070120130 - Thin-film device and method of manufacturing same A thin-film device comprises: a substrate; a flattening film made of an insulating material and disposed on the substrate; and a capacitor provided on the flattening film. The capacitor incorporates: a lower conductor layer disposed on the flattening film; a dielectric film disposed on the lower conductor layer; and an ... 05/31/07 - 20070120129 - Rare earth doped layer or substrate for light conversion A solid state light emitting device comprising an emitter structure having an active region of semiconductor material and a pair of oppositely doped layers of semiconductor material on opposite sides of the active region. The active region emits light at a predetermined wavelength in response to an electrical bias across ... 05/24/07 - 20070114542 - Light emitting device A light emitting device having a plastic substrate is capable of preventing the substrate from deterioration with the transmission of oxygen or moisture content can be obtained. The light emitting device has light emitting elements formed between a lamination layer and an inorganic compound layer that transmits visual light, where ... 05/24/07 - 20070114541 - Light emitting diode wth degenerate coupling structure An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at least one p-type layer, and means for providing a non-rectifying conductive path between the p-type layer and the n-type layer ... 05/24/07 - 20070114540 - Nitride semiconductor light emitting device Disclosed herein is a nitride semiconductor light emitting device, which comprises plural active layers emitting light of different wavelengths. The device comprises p-type and n-type nitride layers, and a plurality of active layers sequentially stacked between the p-type and n-type nitride layers to emit light having different wavelengths. The active ... 05/24/07 - 20070114539 - Semiconductor light-emitting device and producing method for the same A semiconductor light-emitting device includes: a first semiconductor layer; a light-emitting layer being disposed on the first semiconductor layer; a second semiconductor layer being disposed on the light-emitting layer, and metal electrodes connected to the first semiconductor layer and the second semiconductor layer. The light-emitting layer is lower in refractive ... 05/17/07 - 20070108451 - Image forming apparatus On the peripheral edge of a front side substrate of an FED, a rectangular frame shaped sealing surface is formed for sealing a sidewall. On the sealing surface, an indium layer is formed through a base layer. At the four corners of the indium layer, an electrode for applying an ... 05/10/07 - 20070102711 - Led having a reflector layer of improved contact ohmicity and method of fabrication An LED has a light-generating semiconductor region formed on a baseplate via an electroconductive reflector layer. The light-generating semiconductor region has an active layer sandwiched between a pair of claddings of opposite conductivity types for generating light. For good ohmic contact with the light-generating semiconductor region without any substantive diminution ... 05/10/07 - 20070102710 - Lighting device and method A lighting device having a light emitting diode (LED). The device includes a metal substrate having a surface. A dielectric coating layer is superimposed on the surface of the metal substrate. A light emitting diode (LED) is supported on the dielectric coating layer. The metal substrate serves as a heat ... 05/03/07 - 20070096117 - Nitride semiconductor wafer A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off-axis angle of the principal surface of the nitride semiconductor substrate. In a nitride semiconductor single-crystal wafer having a flat principal surface, the ... 05/03/07 - 20070096116 - Semiconductor light emitting device and method of manufacturing same and semiconductor light emitting apparatus A semiconductor light emitting device comprises: a semiconductor laminated body; an electrode provided on the first major surface of the semiconductor laminated body; and a reflecting layer provided on the second major surface side of the semiconductor laminated body. The semiconductor laminated body includes a light emitting layer and having ... 05/03/07 - 20070096115 - Nitride-based semiconductor light emitting diode A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a current spreading layer formed on the p-type nitride semiconductor ... 05/03/07 - 20070096114 - Light emitting apparatus A light emitting apparatus which has a high output power and does not experience a decrease in the emission output power is provided. The light emitting apparatus comprises a light emitting element which has one of main surfaces thereof being used as a light emitting surface and a plurality of ... 05/03/07 - 20070096113 - Led device An LED device includes; an LED chip, a first layer provided on the LED chip, a second layer provided on the first layer, and a third layer provided on the second layer. The first layer has a refractive index n1. The second layer has a refractive index n2, and includes ... 05/03/07 - 20070096112 - Area light emitting device Provided is an area light emitting device, including: an EL element which is provided with a structure in which a first electrode layer, a thin film layer including a light-emitting layer, and a second electrode layer are stacked on a substrate in a stated order, which has a predetermined area ... 05/03/07 - 20070096111 - Light emitting display The present disclosure provides a light emitting display device including a first substrate and a second substrate and a light emitting part disposed therebetween. The first substrate includes an active layer, source and drain electrodes, an insulating layer, and a gate electrode. The active layer is doped with first dopant ... 05/03/07 - 20070096110 - Semiconductor light emitting device and apparatus A semiconductor light emitting device comprises: a semiconductor laminated body including a light emitting layer and having a light extraction surface for light emitted from the light emitting layer, a conductive film provided on the light extraction surface of the semiconductor laminated body and being translucent to the light emitted ... 04/26/07 - 20070090373 - Iii-nitride device with improved layout geometry A III-nitride power device for controlling high currents as an interdigitated electrode pattern for increasing device rating while decreasing device dimensions. Fingers of the interdigitated electrode pattern have tips with smaller dimensions than the remainder of the fingers. The tapered finger design balances current flow in the electrode fingers to ... 04/26/07 - 20070090372 - Light emitting diode A light emitting diode including a substrate, a semiconductor stacking layer, a first electrode and a second electrode is provided. The semiconductor stacking layer including an n-type doped semiconductor layer, a p-type doped semiconductor layer and an active layer is disposed on the substrate. The n-type doped semiconductor layer has ... 04/26/07 - 20070090371 - Photoactive component with organic layers The invention relates to a photoactive component, especially a solar cell, comprising organic layers and formed by at least one stacked pi, ni, and/or pin diode. The diodes are characterised in that they comprise at least one p-doped or n-doped transport layer having a larger optical band gap than that ... 04/19/07 - 20070085087 - Semiconductor light-emitting device, and image display device and lighting unit comprising same A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes: a substrate having a substrate surface oriented along a substrate surface plane; a first grown layer including a first grown layer conductivity type formed on the substrate; a masking layer formed on the first grown layer; a second grown ... 04/19/07 - 20070085086 - Organic light emitting device An organic light emitting device of high quality is disclosed that can be produced by a simple method and rarely causes color degradation due to current in the device. In one embodiment, the organic light emitting device comprises a substrate, a lower electrode disposed over the substrate, an organic light ... 04/19/07 - 20070085085 - Dissipative pick and place tools for light wire and led displays The present invention provides for placement of an LED device on a carrier through the use of a pick-and-place tool. The tool conducts electricity at a rate sufficient to prevent charge buildup but not at so high a rate as to overload the LED being placed. ... 04/19/07 - 20070085084 - Isotropic collimation devices and related methods Devices, such as light-emitting devices (e.g., LEDs), and methods associated with such devices are provided. A light-emitting device may include an interface through which emitted light passes therethrough. The interface having a dielectric function that varies spatially according to a pattern, wherein the pattern is arranged to provide light emission ... 04/19/07 - 20070085083 - Anisotropic collimation devices and related methods Devices, such as light-emitting devices (e.g., LEDs), and methods associated with such devices are provided. A light-emitting device designed to emit light may include an interface through which emitted light passes therethrough, wherein the interface has a dielectric function that varies spatially according to a pattern. The pattern may be ... 04/19/07 - 20070085082 - Light-emitting devices and related systems Light-emitting devices can include a package that supports one or more light-emitting die (e.g., light-emitting diode die, laser diode die) and which can ensure mechanically stability, can facilitate electrical and/or thermal coupling with light-emitting die, and can manipulate the manner by which light generated by the die is emitted out ... 04/19/07 - 20070085081 - Thermally efficient semiconductor laser structure and method of forming same The present invention provides a thin-film semiconductor laser device that utilizes a double-sided heat removal technique and architecture. The term “thin-film semiconductor laser”, as used herein, refers to a semiconductor laser having a p-i-n structure, in which the thickness of the p-layer is no more than 10 times the thickness ... 04/12/07 - 20070080354 - Power package and fabrication method thereof The present invention relates to a combined light emitting diode (LED) package structure and a fabricating method for fabricating the same. The combined LED package structure includes an LED chip, a conductive structure and an encapsulant. The encapsulant encapsulates the LED chip and a portion of the conductive structure. The ... 04/12/07 - 20070080353 - Nitride-based semiconductor light emitting diode and method of manufacturing the same A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a ... 04/12/07 - 20070080352 - Light-emitting diode chip A LED chip includes a substrate, a semiconductor layer, a micro-rough layer, a first electrode and a second electrode. The semiconductor layer is disposed on the substrate, the micro-rough layer is disposed in the semiconductor layer, or between the semiconductor layer and the substrate, or on an upper surface of ... 04/05/07 - 20070075320 - Semiconductor laser device and method of fabricating semiconductor laser device A semiconductor laser device includes a supporting substrate; a semiconductor laser device portion which is formed on a surface of the supporting substrate, and which includes a pair of cavity surfaces; an adhesive layer with which the supporting substrate and the semiconductor laser device portion are adhered to each other; ... 04/05/07 - 20070075319 - Semiconductor light-emitting device with transparent conductive film A semiconductor light-emitting device with a transparent conductive film has: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad layer; an As-based contact layer formed on the light-emitting portion, the contact layer being doped with a ... 04/05/07 - 20070075318 - Two-dimensional photonic crystal surface-emitting laser A two-dimensional photonic crystal surface-emitting laser having a photonic crystal (20) in which a photonic crystal periodic structure (21) is located in or near an active layer (first medium) (12) which emits light when carriers are injected thereto. The photonic crystal periodic structure (21) comprises a second medium with a ... 03/29/07 - 20070069220 - Composite semiconductor light-emitting device A composite semiconductor light-emitting device includes a first semiconductor element portion made of a first semiconductor material and a second semiconductor element portion made of a second semiconductor material different from the first semiconductor material. The first semiconductor element portion has a first semiconductor layered structure, and the second semiconductor ... 03/29/07 - 20070069219 - Light emitting device A light emitting device is proposed, which emits light while connected to the power. The light emitting device includes a light emitting element having at least two electrodes disposed at the side of the light output surface thereof; and a base member having a recess and lead portions corresponding to ... 03/29/07 - 20070069218 - Light-emitting diode chip A light-emitting diode chip (LED chip) including a substrate, an electrostatic conducting layer, a first type doped semiconductor layer, an active layer, a second type doped semiconductor layer, a first electrode and a second electrode is provided. The electrostatic conducting layer is disposed on the substrate, while the first type ... 03/22/07 - 20070063201 - Optical module having a lens formed without contacting a reflector and method of making the same An optical module includes a substrate, a chip, a reflector and a lens. The chip is disposed on the substrate for emitting light. The reflector is disposed on the substrate for reflecting light emitted by the chip. The lens is formed on the substrate using resin. The lens covers the ... 03/15/07 - 20070057263 - Quantum dot light emitting layer An inorganic light emitting layer having a plurality of light emitting cores, each core having a semiconductor material that emits light in response to recombination of holes and electrons, each such light emitting core defining a first bandgap; a plurality of semiconductor shells formed respectively about the light emitting cores ... 03/01/07 - 20070045637 - Low cost ingaain based lasers A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. ... 03/01/07 - 20070045636 - Display substrate, method of manufacturing the same and display device having the same A display substrate includes a substrate, a first insulating layer, an undercut compensating member, a first electrode, a second insulating layer and a first conductive pattern. The first insulating layer is formed on the substrate. The undercut compensating member is formed on the first insulating layer. The undercut compensating member ... 03/01/07 - 20070045635 - Light emitting diode device A light emitting diode device includes a substrate, a reflective layer, a joint layer and a light emitting diode layer stacked in turn from bottom to top, a material of the main substrate being Cu or Al, and a material of the reflective layer being metal Al or Ag, or ... 03/01/07 - 20070045634 - Light emitting diode device A light emitting diode device includes a main substrate, a reflective layer, a joint layer, a light emitting diode layer and a diffusing layer stacked in turn from bottom to top, a material of the main substrate is silicon, a material of the reflective layer is metal alloy, the diffusing ... 03/01/07 - 20070045633 - Semiconductor optical device having an improved current blocking layer and manufacturing method thereof A semiconductor optical device includes an active layer, a current blocking layer on both sides of the active layers and a cladding layer on both the active layer and the current blocking layer. The current blocking layer includes a buried layer, at least one intermediate layer of Al(Ga)InAs and a ... 03/01/07 - 20070045632 - Microelectronic imaging units and methods of manufacturing microelectronic imaging units at the wafer level Microelectronic imaging units and methods for manufacturing a plurality of imaging units at the wafer level are disclosed herein. In one embodiment, a method for manufacturing a plurality of imaging units includes providing an imager workpiece having a plurality of imaging dies including integrated circuits, external contacts electrically coupled to ... 02/15/07 - 20070034882 - Semiconductor light-emitting device An LED chip of the present invention includes a columnar GaP substrate in which a tapered portion whose outer shape is narrowed toward an upper bottom surface side is formed in an outer wall surface thereof, an upper-surface electrode provided in an upper bottom surface of the GaP substrate, a ... 02/15/07 - 20070034881 - Light emitting device When a light emitting element is actuated to allow the light emission, the generation of Joule heat occurs, leading to the decomposition or crystallization of an organic compound to cause the degradation of the light emitting device. Therefore, a light emitting element of the present invention is provided for effecting ... 02/15/07 - 20070034880 - Method for the production of a plurality of opto-electronic semiconductor chips and opto-electronic semiconductor chip A method for the production of a plurality of optoelectronic semiconductor chips and The invention relates to a method for the production of a plurality of optoelectronic semiconductor chips each having a plurality of structural elements with respectively at least one semiconductor layer. The method involves providing a chip composite ... 02/08/07 - 20070029556 - Solution processed crosslinkable hole injection and hole transport polymers for oleds A fully solution-processed polymer electroluminescent device has a hole injection layer fabricated using a crosslinkable hole injection/transport material doped with conductivity dopants. ... 02/08/07 - 20070029555 - Edge-emitting led light source Edge-emitting LED light source, and method for fabricating an edge-emitting LED light source. The edge-emitting LED light source has a plurality of edge-emitting LEDs arranged in close proximity to one another to define an array of edge-emitting LEDs. Light beams separately emitted by each of the plurality of edge-emitting LEDs ... 02/01/07 - 20070023763 - Semiconductor light-emitting device and method for fabricating the same A semiconductor light-emitting device includes a light-emitting layer and a light extraction layer formed on the light-emitting layer and made of a resin material containing particles. The maximum size of each of the particles contained in the light extraction layer is smaller than the wavelength of emitted light penetrating through ... 02/01/07 - 20070023762 - White light emitting led-powered lamp The invention relates to a white light emitting LED lamp. The LED lamp comprises an LED emitting blue light and luminescent layer for converting a part of the blue light into light having a longer wavelength. According to the invention either a dye is provided for absorbing a part of ... 01/25/07 - 20070018173 - Method of fabricating vertical devices using a metal support film A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal techniques. Trenches that define the boundaries of the individual devices are formed through the semiconductor layers and into the insulating substrate, beneficially by inductive ... 01/18/07 - 20070012929 - Nitride-based semiconductor light-emitting device and method of fabricating the same A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover ... 01/18/07 - 20070012928 - Light emitting diode comprising semiconductor nanocrystal complexes and powdered phosphors A white light light emitting diode (LED) formed by depositing an LED chip that emits light at a first wavelength and forming a semiconductor nanocrystal complex. The semiconductor nanocrystal complex absorbs at least a portion of the light emitted by the LED chip and emits light at a second wavelength. ... 01/18/07 - 20070012927 - Radiation-emitting optoelectronic semiconductor chip with a diffusion barrier In a radiation-emitting optoelectronic semiconductor chip comprising an active layer (3) at least one p-doped layer (9) and a layer sequence (8) comprising a plurality of undoped layers (4, 5, 6, 7), which is arranged between the active layer (3) and the p-doped layer (9) and contains at least a ... 01/11/07 - 20070007538 - Light-emitting device, method for producing same, and display Disclosed herein is a light-emitting device comprising a transparent or semi-transparent first substrate, a second substrate provided opposite to the first substrate, a transparent or semi-transparent first electrode provided on the first substrate, a second electrode provided on the second substrate so as to be opposite to the first electrode, ... 01/04/07 - 20070001178 - Coating process A light emitting diode (LED) device having a substantially conformal wavelength-converting layer for producing uniform white light and a method of making said LED at both the wafer and individual die levels are provided. The LED device includes a metal substrate, a p-type semiconductor coupled to the metal substrate, an ... 01/04/07 - 20070001177 - Integrated light-emitting diode system An integrated LED light system (100) including a printed circuit board (110, 410) and a submount (120, 420) mounted on the printed circuit board (110, 410). System (100) further includes an array of LEDs (125, 425) in electrical communication with the submount (120, 420) to receive forward currents. The array ... 12/28/06 - 20060289875 - Light emitting diode and method making the same A light emitting diode and the method of the same are provided. The light emitting diode includes a substrate, a thermal spreading layer, a connecting layer and an epitaxial structure. The substrate is selected from a transparent substrate or a non-transparent substrate, which corresponds to different materials of the connecting ... 12/21/06 - 20060284191 - Light emitting diode A light emitting diode includes a light emitting structure, a heterojunction, a first electrode, and a second electrode. The light emitting structure has a top surface where the first electrode and the second electrode are positioned thereon. The heterojunction is in the light emitting structure and includes a first semiconductor ... 12/21/06 - 20060284190 - Light emitting diodes with reflective electrode and side electrode A light emitting diode includes a first doped semiconductor layer, an active region and a second doped semiconductor layer. The first reflective electrode of the light emitting diode is connected to the edge surfaces of the first doped semiconductor layer. The second reflective electrode includes an optically transparent layer and ... 12/21/06 - 20060284189 - Light-emitting element, light-emitting device, and electronic device The present invention provides a light-emitting element, a light-emitting device and an electronic device in which an optical path length through which generated light goes can be changed easily. The present invention provides a light-emitting element including a light-emitting layer between a first electrode and a second electrode, and a ... 12/21/06 - 20060284188 - Light-emitting diode and method for manufacturing the same A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode has a first substrate. An illuminant epitaxial structure is deposited on a surface of the first substrate, in which the illuminant epitaxial structure has a first surface and a second surface opposite each other, ... 12/21/06 - 20060284187 - Grown photonic crystals in semiconductor light emitting devices A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the ... 12/21/06 - 20060284186 - Semiconductor light emiting device and method of producing the same To provide a semiconductor light emitting device capable of improving an aspect ratio of a laser beam to make it close to a circular shape and a method of producing the same, a first conductive type first cladding layer 11, an active layer 12, and a second conductive type second ... 12/21/06 - 20060284185 - Light emitting device and phosphor for the same Provided is a light emitting device including a light emititng chip, and a phosphor through which a light emitting from the light emitting chip at least partially passes such that the light is converted into lights having at least two different wavelengths and emitted. The light emtting device emits white ... 12/14/06 - 20060278880 - Light emitting semiconductor device A novel NPBL and ANPL light emitting semiconductor device and a method for fabricating the same are provided. In the present invention, plural nano-particles are applied in the active layer of the light emitting semiconductor device, so that the leakage current thereof is reduced. In addition, the provided light emitting ... 12/07/06 - 20060273330 - Semiconductor device using partial soi substrate and manufacturing method thereof A semiconductor device manufacturing method includes selectively removing portions of a buried oxide layer and first semiconductor layer in an SOI substrate having the first semiconductor layer formed above a semiconductor substrate with the buried oxide layer disposed therebetween and exposing part of the semiconductor substrate, removing an exposed region ... 12/07/06 - 20060273329 - Semiconductor device The semiconductor device according to the present invention includes a semiconductor layer containing plural band gap change thin films in which a band gap is continuously monotonously changed in a laminating direction. Therefore, the present invention provides a semiconductor device having high reliability and low electric resistance. ... 12/07/06 - 20060273328 - Light emitting nanowires for macroelectronics Systems and methods to fabricate macroelectronic light emitting devices using densely oriented nanowires are disclosed. In one embodiment, core nanowires are synthesized and an insulating shell is fabricated around the nanowires. The nanowire core-shell structures are then deposited on a substrate to create a densely oriented nanowire thin film. Once ... 12/07/06 - 20060273327 - Light emitting diode A light emitting diode is provided. The light emitting diode includes: a n-type semiconductor layer; a p-type semiconductor layer facing the n-type semiconductor layer; an active layer formed between the n-type semiconductor layer and the p-type semiconductor layer; and a nanopattern metal layer that is formed in a predetermined pattern ... 12/07/06 - 20060273326 - Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first ... 12/07/06 - 20060273325 - Ultraviolet detector An UV detector, comprising: a sapphire substrate; a high temperature AlN buffer layer grown on the sapphire substrate; an intermediate temperature GaN buffer layer grown on the high temperature AlN buffer layer; a GaN epitaxial layer deposited on the intermediate temperature GaN buffer layer; a Schottky junction formed on top ... 12/07/06 - 20060273324 - Light-emitting diode and process for producing the same The back surface of a semiconductor crystal substrate 102 which has a thickness of about 150 μm and is made of undoped GaN bulk crystal consists of a polished plane 102a which is flattened through dry-etching and a grinded plane 102b which is formed in a taper shape and is ... 11/30/06 - 20060267029 - Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior ... 11/30/06 - 20060267028 - Led luminaire A modular light emitting diode (LED) mounting configuration is provided including a light source module having a plurality of pre-packaged LEDs arranged in a serial array. The module is connected to a heat dissipating plate configured to mount to an electrical junction box. Thus, heat from the LEDs is conducted ... 11/30/06 - 20060267027 - Light-emitting gallium nitride-based iii-v group compound semiconductor device with high light extraction efficiency A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency that features on a substrate with concave and /or convex surface, a texturing surface layer, and a transparent conductive window layer. Therefore, the operating voltage is decreased and the efficiency of light extracting is improved. ... 11/30/06 - 20060267026 - White light emitting device The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, ... 11/30/06 - 20060267025 - Light emitting device A light emitting device includes a substrate having a patterned surface and formed with a plurality of spaced apart cavities, and an epitaxial layer formed on the patterned surface of the substrate, having a patterned surface that is in face-to-face contact with the patterned surface of the substrate, and formed ... 11/23/06 - 20060261355 - Nitride semiconductor device A nitride semiconductor device includes a conductive oxide film with high reliability is provided. The nitride semiconductor device having a nitride semiconductor layer includes a conductive oxide film on the nitride semiconductor layer and a pad electrode on the conductive oxide film. The pad electrode includes a junction layer that ... 11/23/06 - 20060261354 - Semiconductor light-emitting device A semiconductor light-emitting device includes a substrate having light transmission characteristics, a light emission layer on a surface side of the substrate, and which emits light when being energized, and a pair of electrodes to energize the light emission layer, wherein a surface of the substrate which is located opposite ... 11/23/06 - 20060261353 - Group iii nitride semiconductor stacked structure An object of the present invention is to provide a Group III nitride semiconductor stacked structure with a low dislocation density obtained by stacking only a semiconductor layer on a flat substrate by the use of a normal epitaxial growth method without processing the substrate or a deposit layer on ... 11/23/06 - 20060261352 - Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to ... 11/23/06 - 20060261351 - Semiconductor light source device A semiconductor light source device, for enabling to cool LED elements driven with short pulses, effectively, and also being cheaply producible without increasing the number of pats thereof, comprising a plural number of light emitting diode chips 202 on a heat diffusion plate 201, and Pertier elements 208, as being ... 11/23/06 - 20060261350 - Light-emitting diode A light-emitting diode with high luminous efficiency is provided which is free from deformation or defects of a crystal caused by a dopant. The light-emitting diode emits no light of unnecessary wavelengths and has a wide selection of emission wavelengths. The light-emitting diode comprises a light-emitting layer made of an ... 11/16/06 - 20060255342 - Electrode structure, and semiconductor light-emitting device having the same A semiconductor light emitting device comprising: a transparent substrate; an electron injection layer of N-type GaN-based semiconductor; an active layer on the electron injection layer; a hole injection layer of P-type GaN-based semiconductor on the active layer; a first electrode structure on the hole injection layer; a second electrode structure ... 11/16/06 - 20060255341 - Bonded intermediate substrate and method of making same An intermediate substrate includes a handle substrate bonded to a thin layer suitable for epitaxial growth of a compound semiconductor layer, such as a III-nitride semiconductor layer. The handle substrate may be a metal or metal alloy substrate, such as a molybdenum or molybdenum alloy substrate, while the thin layer ... 11/16/06 - 20060255340 - Surface passivated photovoltaic devices A photovoltaic device comprising a photovoltaic cell is provided. The photovoltaic cell includes an emitter layer comprising a crystalline semiconductor material and a lightly doped crystalline substrate disposed adjacent the emitter layer. The lightly doped crystalline substrate and the emitter layer are oppositely doped. Further, the photovoltaic device includes a ... 11/09/06 - 20060249737 - Solid-state imaging device and manufacturing method thereof A solid-state imaging device comprises a solid-state imaging element including a photo-reception portion and electrode pads, and optical glass bonded onto the solid-state imaging element through a bonding layer, wherein penetrating electrodes which reach the rear face of the solid-state imaging element are formed below the electrode pads of the ... 11/09/06 - 20060249736 - Nitride semiconductor light emitting device and method of manufacturing the same The present invention relates to a nitride semiconductor light emitting device. The nitride semiconductor light emitting device includes an n-type electrode; an n-type nitride semiconductor layer that is formed to come in contact with the n-type electrode; an active layer that is formed on the n-type nitride semiconductor layer; a ... 11/02/06 - 20060243989 - Light emitting device, method of preparing the same and device for fabricating the same A light emitting device having a high definition, a high aperture ratio and a high reliability is provided. The present invention realizes a high definition and a high aperture ratio for a flat panel display of full colors using luminescent colors of red, green and blue without being dependent upon ... 11/02/06 - 20060243988 - Nitride semiconductor element It is an object of the present invention to provide a nitride semiconductor element, which uses Si as a substrate, and whose voltage in the forward direction (Vf) is lower than in the prior art. In the nitride semiconductor element which has a nitride semiconductor layer over an Si substrate, ... 11/02/06 - 20060243987 - White light emitting device A white light emitting device is disclosed. The white light emitting device is composed by two light-emitting layers that emit light with wavelength λ1 and λ2 respectively. Then a first phosphor is used to absorb part of the two wavelength light and emit light having a wavelength of λ3. Or ... 11/02/06 - 20060243986 - Rgb thermal isolation substrate A submount for red, green, and blue LEDs is described where the submount has thermally isolated trenches and/or holes in the submount so that the high heat generated by the green/blue AlInGaN LEDs is not conducted to the red AllnGaP LEDs. The submount contains conductors to interconnect the LEDs in ... 10/26/06 - 20060237729 - Light emission from semiconductor integrated circuits Structures and methods to inject electrons into an insulator from a semiconductor layer that are then collected in a thin layer of a direct semiconductor material which in turn emits light by bandgap recombination. ... 10/19/06 - 20060231846 - Thin film transistor array panel for liquid crystal display A black matrix having an opening at pixels of a matrix array in a display area, a common wire including common pads and common signal lines, and gate pads in a peripheral area, and an alignment key in outer area to align interlayer thin films are formed on an insulating ... 10/19/06 - 20060231845 - White-light emitting semiconductor device A white-light emitting semiconductor device includes a first light-emitting die, a second light-emitting die, a photostimulable luminescent substance, and a holding assembly. The first light-emitting die emits a first radiation having a first wavelength range. The second light-emitting die emits a second radiation having a second wavelength range, and a ... 10/19/06 - 20060231844 - Organic optoelectronic device An organic optoelectronic device includes a substrate having an upper surface and a lower surface, at least one organic diode situated on the upper surface of the substrate, the organic diode including, an anode including a material of high work function situated over the upper surface of the substrate, an ... 10/19/06 - 20060231843 - Phosphorescent light-emitting component comprising organic layers The invention relates to a light emitting component with organic layers and emission of triplet exciton states (phosphorescent light) with increased efficiency, having a layer sequence with a hole injecting contact (anode), one or more hole injecting and transporting layers, a system of layers in the light emission zone, one ... 10/12/06 - 20060226431 - Light-emitting device and method of manufacturing the same Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the growth of the semiconductor crystal layer ... 10/05/06 - 20060220035 - Light emitting device and its manufacturing method The present invention is intended to provide a light emitting device which can be operated at a low voltage, has excellent luminous efficiency, stability, production cost, and the like. A light emitting device which has at least electrode layers 11, 14, a light emitting layer 13, a structure layer 12 ... 10/05/06 - 20060220034 - Thin film transistor with capping layer and method of manufacturing the same A thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor may include a substrate, a buffer layer, a polysilicon layer, a gate insulating layer and/or a gate electrode, and a capping layer. The buffer layer may be formed on the substrate. The polysilicon ... 10/05/06 - 20060220033 - Electro-optical device, method of manufacturing the same, and electronic apparatus An electro-optical device includes: a substrate; data lines and scanning lines extending to cross each other on the substrate; thin film transistors disposed below the data lines on the substrate; storage capacitors each of which is disposed in a region including a region facing a channel region of each of ... 10/05/06 - 20060220032 - Semiconductor light emitting device A semiconductor light emitting device has: a semiconductor substrate; a semiconductor layer having an n-type cladding layer, an active layer, a p-type cladding layer and a p-type contact layer, wherein the p-type contact layer is made of an As-based material and located at the top of the semiconductor layer and ... 10/05/06 - 20060220031 - A1lngap led having reduced temperature dependence To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. ... 10/05/06 - 20060220030 - Lighting device with flipped side-structure of leds Disclosed is a lighting device with flipped side-structure of LEDs, which allows emitted lights to travel in parallel with the mounting surface. Single or plural LED chips are mounted on a substrate with their side surfaces facing the substrate surface. The lighting device can be further combined with optical protrusions ... 10/05/06 - 20060220029 - Light-emitting device and method for manufacturing light-emitting device A light emitting device 1 has formed therein a light emitting layer section 24 based on a double heterostructure in which a p-type cladding layer 34, an active layer 33 and an n-type cladding layer 32, individually composed of a MgaZn1-aO (0≦a≦1) type oxide, are stacked in this order, and ... 09/28/06 - 20060214171 - Semiconductor light-emitting element and light-emitting device A semiconductor light-emitting element has a laminated section which has an active layer made of a semiconductor, and first and second clad layers each being disposed to sandwich the active layer and made of a semiconductor, a pair of first high-reflection layers each being disposed to sandwich the active layer ... 09/21/06 - 20060208262 - Light emitting device and illumination apparatus A light-emitting device and illumination apparatus using the same are provided. The light-emitting device includes a semiconductor light-emitting element that emits blue-violet or blue light and a fluorescent material that absorbs the light emitted by the semiconductor light-emitting element and emits fluorescence of wavelengths different from the light, wherein the ... 09/14/06 - 20060202211 - Method for fabricating light-emitting device utilizing substrate transfer by laser decomposition A light-emitting device includes an element structure including at least two semiconductor layers having mutually different conductivity types. A transparent p-side electrode of ITO is formed on the element structure. A bonding pad is formed on a region of the p-side electrode. An n-side electrode made of Ti/Au is formed ... 09/14/06 - 20060202210 - Led mounting having increased heat dissipation There is disclosed a system and method for increasing heat dissipation of LED displays by using the current PCB packaging mounted to a LCD panel support structure thereby eliminating the need for a metal core PCB. In one embodiment, reverse mounted LEDs having heat dissipation pads are used to optimize ... 09/07/06 - 20060197096 - Substrate with refractive index matching This invention provides a composite substrate that has a transparent mechanical support, for example of glass or quartz, a film or thin layer of monocrystalline semi-conductive material and an intermediate antireflective layer located between the thin layer or the semi-conductive film and the support. The composition of the intermediate antireflective ... 09/07/06 - 20060197095 - Organic electroluminescent device, method of manufacturing organic electroluminescent device, and electronic apparatus An organic electroluminescent device includes a first member: a light-emitting element that is formed on the first member; a second member that has a second region bonded to the first region of the first member, and forms a sealing space for sealing the light-emitting element between the first member and ... 09/07/06 - 20060197094 - Semiconductor light emitting device, semiconductor light emitting apparatus, and method of manufacturing semiconductor light emitting device Disclosed is a semiconductor light emitting device comprising: a substrate having first and second major surfaces and being translucent to light in a first wavelength band; and a semiconductor stacked body provided on the first major surface and including a light emitting layer that emits light in the first wavelength ... 08/31/06 - 20060192214 - Semiconductor device, led print head, that uses the semiconductor, and image forming apparatus that uses the led print head A semiconductor device includes a substrate, conductive layer, semiconductor thin films, and individual electrodes. The conductive layer is formed on the substrate and serves as a common electrode. The thin films are bonded on the conductive layer. Each of the plurality of semiconductor thin films includes at least one active ... 08/31/06 - 20060192213 - Light-emitting device A light-emitting device includes electron emitters for planarly emitting electrons, collector electrodes disposed to face corresponding one electron emitter, and a phosphor formed near the collector electrodes. During a period when electrons are emitted from the electron emitter, a collector voltage is applied to each of the collector electrodes in ... 08/31/06 - 20060192212 - High brightness light emitting diode and fabrication method thereof A light emitting diode includes a substrate tilted toward first and second directions simultaneously, a first cladding layer formed with a semiconductor material of a first conductive type on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed with a semiconductor material ... 08/31/06 - 20060192211 - Light emitting diode and method for fabricating same wherein t1 is a film thickness [nm] of the AlGaAs layer, t2 is a film thickness [nm] of the AlInP layer, λ0 is a wavelength [nm] of a light to be reflected, n1 is a refractive index of the AlGaAs layer to the wavelength of the light to be reflected, ... // - 0.5<α<0.9 (3) - ... 08/31/06 - 20060192210 - Light-emitting element, light-emitting device, and electronic apparatus A light-emitting element includes a first electrode, a second electrode, and a light-emitting layer disposed between the first electrode and the second electrode, the light-emitting layer including an inorganic semiconductor material, a first material, and a second material, at least one of the first material and the inorganic semiconductor material ... 08/31/06 - 20060192209 - Optical integrated semiconductor light emitting device An optical integrated semiconductor light emitting device with improved light emitting efficiency is provided by preventing leak current from flowing through a high defect region of the substrate. The optical integrated semiconductor light emitting device includes: a substrate, in which in a low defect region made of crystal having a ... 08/31/06 - 20060192208 - Wavelength-convertible light emitting device The present invention provides a wavelength-convertible LED which has first and second surfaces, including first and second conductivity-type cladding layers and an active layer formed between the first and second conductivity-type cladding layers to emit a specific wavelength light. The invention also includes at least a piezoelectric layer on at ... 08/31/06 - 20060192207 - Nitride semiconductor light emitting device Provided is a nitride semiconductor light emitting device having enhanced output power and resistance to electrostatic discharge. The light emitting device comprises an n-side contact layer formed on a substrate, a current diffusion layer formed on the n-side contact layer, an active layer formed on the current diffusion layer, and ... 08/31/06 - 20060192206 - Flip-chip type nitride semiconductor light emitting diode Disclosed herein is a flip-chip type nitride semiconductor light emitting diode. The light emitting diode comprises an n-type nitride semiconductor layer formed on a transparent substrate and having a substantially rectangular upper surface, an n-side electrode which comprises at least one bonding pad adjacent to at least one corner of ... 08/24/06 - 20060186419 - Light-emitting device A light-emitting device includes a first electrode, a second electrode, a porous layer and an electrolyte. The first electrode comprises a first surface. The second electrode comprises a second surface. The porous layer is formed of n-type semiconductor and provided on the first surface of the first electrode or the ... 08/24/06 - 20060186418 - External extraction light emitting diode based upon crystallographic faceted surfaces A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that ... 08/24/06 - 20060186417 - Light emitting diode and method making the same A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the ... 08/17/06 - 20060180817 - Silicon phosphor electroluminescence device with nanotip electrode An electroluminescence (EL) device and a method are provided for fabricating said device with a nanotip electrode. The method comprises: forming a bottom electrode with nanotips; forming a Si phosphor layer adjacent the nanotips; and, forming a transparent top electrode. The Si phosphor layer is interposed between the bottom and ... 08/17/06 - 20060180816 - Wide wavelength range silicon electroluminescence device A method is provided for forming a Si electroluminescence (EL) device for emitting light at short wavelengths. The m |