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Incoherent Light Emitter Structure

Incoherent Light Emitter Structure patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes)


Incoherent Light Emitter Structure



Electroluminescent display panel and method of fabricating the same
10/30/14 - 20140319546 - An electroluminescent display panel and method of fabricating the same are provided. The electroluminescent display panel includes a first multiple-layered structural layer, a second multiple-layered structural layer, a passivation layer and a third patterned conductive layer. The first multiple-layered structural layer includes a first patterned conductive layer, a first patterned...

Method of producing a plurality of optoelectronic semiconductor chips, and optoelectronic semiconductor chip
10/30/14 - 20140319547 - A method of producing a plurality of optoelectronic semiconductor chips includes a) providing a layer composite assembly having a principal plane which delimits the layer composite assembly in a vertical direction, and includes a semiconductor layer sequence having an active region that generates and/or detects radiation, wherein a plurality of...

Light emitting diode package
10/16/14 - 20140306240 - An exemplary light emitting diode package includes a substrate, a first electrode and a second electrode embedded in the substrate, and a light emitting chip fixed onto the first electrode by first glue. The first electrode has a first barrier member at a periphery of the first glue and below...

Light-emitting device
10/16/14 - 20140306241 - In a light-emitting device where reflective electrodes are regularly arranged, occurrence of interference fringes due to reflection of light reflected by the reflective electrode is inhibited. A surface of the reflective electrode of a light-emitting element is provided with a plurality of depressions. The shapes of the plurality of depressions...

Optoelectronic semiconductor structure and method for transporting charge carriers
10/09/14 - 20140299892 - An optoelectronic semiconductor structure (20) comprises an n-type semiconductor region (3); a p-type semiconductor region (1); a p-n junction formed between the n-type and p-type semiconductor regions; and an active region (2). According to the present invention, the optoelectronic semiconductor structure (20) is configured to transport, when in use, charge...

Low carbon group-iii nitride crystals
09/18/14 - 20140264388 - The present disclosure generally relates to systems and methods for producing and using Group-III nitride crystals that have enhanced or increase ultraviolet transparency in a range of wavelengths. The crystals may also be used in a number of UV optics and UV optical semiconductor devices....

Light emitting diode structure and manufacturing method thereof
09/18/14 - 20140264389 - wherein M represents sodium, zinc, magnesium, or potassium. The epitaxy layer is disposed on the polymer layer. The epitaxy layer is bonded to the substrate via the polymer layer....

Optoelectronic device and method for manufacturing the same
09/18/14 - 20140264390 - A method of fabricating an epitaxial device, comprising: providing a substrate having a first surface and a normal direction; epitaxially forming a first transition layer in a first temperature on the first surface of the substrate and in-situ incorporating a porogen into the first transition layer; and adjusting the first...

Semiconductor device and manufacturing method thereof
09/18/14 - 20140264391 - A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film....

Solid state lighting devices with reduced crystal lattice dislocations and associated methods of manufacturing
09/04/14 - 20140246683 - Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device...

Led chip and method for manufacturing the same
08/21/14 - 20140231831 - The invention provides a substrate structure used for manufacturing a light-emitting diode and a method for manufacturing the light-emitting diode. The substrate structure includes a substrate having a first surface and a second surface opposite to the first surface and a plurality of grooving structure formed on the first surface...

Substrate structure for manufacturing light emitting diode and method for manufacturing light emitting diode
07/17/14 - 20140197423 - The invention provides a substrate structure for manufacturing a light-emitting diode and a method for manufacturing the light-emitting diode. The substrate structure comprises a substrate having a first surface and a second surface opposite to the first surface; and a plurality of grooving structure formed on the first surface of...

Complementary metal oxide semiconductor device, optical apparatus including the same, and method of manufacturing the same
07/10/14 - 20140191252 - A complementary metal oxide semiconductor (CMOS) device includes an n-type first transistor on a silicon substrate, the n-type first transistor including a Group III-V compound semiconductor substrate, and a p-type second transistor on the silicon substrate, the p-type second transistor including a germanium based substrate....

Light emitting element
07/03/14 - 20140183564 - A light emitting element includes a first conductivity-type semiconductor layer, a first electrode, a second conductivity-type semiconductor layer and a second electrode. The second conductivity-type semiconductor layer has a square peripheral shape. The first electrode includes a first connecting portion on a first diagonal line and a first extending portion...

Display substrate and method of manufacturing the same
06/12/14 - 20140159059 - A method of manufacturing a display substrate includes forming a gate insulation layer on the base substrate on which a gate metal pattern, forming a data metal pattern on the gate insulation layer, sequentially forming a insulation layer and an organic layer on the base substrate on which the data...

Patterned substrate and electro-optical semiconductor element
06/12/14 - 20140159060 - A patterned substrate includes a substrate body and a plurality of solid patterns. The solid patterns are set on the substrate body, and at least partial pitches between the solid patterns are different....

Protection element and light emitting device using same
06/12/14 - 20140159061 - A protective element includes a semiconductor substrate, connecting electrodes, bottom electrodes, and a protection circuit. The connecting electrodes are provided on a mount surface of the semiconductor substrate on which a light-emitting element for flip-chip mounting is mounted so as to be each connected to an electrode of the light-emitting...

Semiconductor device and manufacturing method thereof
06/05/14 - 20140151720 - A semiconductor device adapted for being disposed on a substrate is provided. The semiconductor device includes a pixel electrode, a drain, a semiconductor channel layer, a source, a gate insulation layer and a side-gate. The pixel electrode is disposed on the substrate. The drain is disposed on the pixel electrode...

Light-emitting device, lighting device, and electronic device
05/22/14 - 20140138711 - It is an object to provide a flexible light-emitting device with high reliability in a simple way. Further, it is an object to provide an electronic device or a lighting device each mounted with the light-emitting device. A light-emitting device with high reliability can be obtained with the use of...

Light emitting diode and method for manufacturing the same
05/22/14 - 20140138712 - A light emitting device is provided, including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, an active layer between the first semiconductor layer and the second semiconductor layer, and a plurality of electrodes. The first semiconductor layer has a step-down region such that one...

Flexible light-emitting device, electronic device, and method for manufacturing flexible-light emitting device
05/08/14 - 20140124796 - It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long lifetime using the flexible light-emitting device. A flexible light-emitting device is provided, which includes a substrate having flexibility and a light-transmitting property with respect...

Method for producing an optoelectronic component and component produced in such manner
03/06/14 - 20140061676 - A method of producing an optoelectronic component includes providing a semiconductor chip having an active layer that generates radiation and is arranged on a carrier, applying a dispersed material including a matrix material and particles embedded therein to the semiconductor chip and/or the carrier at least in regions, wherein before...

Light-emitting transistors with improved performance
02/27/14 - 20140054613 - Disclosed are light-emitting transistors having novel structures that can lead to enhanced device brightness, specifically, via incorporation of additional electrically insulating components that can favor charge localization and in turn, carrier recombination and exciton formation....

Power light emitting diode and method with uniform current density operation
01/30/14 - 20140027789 - A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the...

Light-emitting device having patterned substrate and method of manufacturing thereof
01/16/14 - 20140014974 - A light-emitting device disclosed herein comprises a patterned substrate having a plurality of cones, wherein a space is between two adjacent cones. A light-emitting stack formed on the cones. Furthermore, the cones comprise an area ratio of a top area of the cone and a bottom area of the cone...

Semiconductor chip including heat radiation member, and display module
01/16/14 - 20140014975 - A semiconductor chip includes a circuit region having an integrated semiconductor circuit on a semiconductor substrate, and a heat radiation member on at least a portion of a scribe lane region configured to at least partially surround the circuit region, the heat radiation member including a plurality of heat radiation...

Optical device and processing method of the same
01/16/14 - 20140014976 - An optical device including: a rectangular front side having a light-emitting layer; a rectangular rear side parallel to the front side; and first to fourth lateral sides adapted to connect the front and rear sides, in which the first lateral side is inclined by a first angle with respect to...

Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device
01/16/14 - 20140014977 - An optoelectronic semiconductor device includes an optoelectronic semiconductor layer sequence on a metal carrier element, which includes as a first component silver and as a second component a material having a lower coefficient of thermal expansion than silver, wherein the first and second components are intermixed in the metal carrier...

Light-emitting device and method for fabricating the same
01/09/14 - 20140008668 - To provide a method for fabricating a light-emitting device using flexible glass which is capable of withstanding a process temperature higher than or equal to 500° C., and the light-emitting device. A second substrate is attached to a support substrate using an adsorption layer. The second substrate is bonded to...

Display apparatus and method of manufacturing the same
12/19/13 - 20130334543 - A display apparatus includes a display panel, a gate driver, and a data driver. The display panel includes a display area in which an image is displayed and a non-display area disposed adjacent to the display area. The display panel includes an insulating substrate which has a groove. The gate...

Optoelectronic semiconductor chip and method for the production thereof
12/12/13 - 20130328066 - An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is...

Semiconductor device and a method of manufacturing the same
12/05/13 - 20130320358 - A semiconductor device is manufactured by forming at least one epitaxial structure over a substrate. A portion of the substrate is cut and lifted to expose a partial surface of the epitaxial structure. A first electrode is then formed on the exposed partial surface to result in a vertical semiconductor...

Method of driving a light emitting device
11/28/13 - 20130313578 - The present invention is characterized in that a transistor with its L/W set to 10 or larger is employed, and that...

Optoelectronic device and method for manufacturing the same
11/21/13 - 20130306993 - A method of fabricating an optoelectronic device, comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming an supporting layer covering the light...

Active matrix substrate, display device, method for inspecting the active matrix substrate, and method for inspecting the display device
11/14/13 - 20130299850 - An active matrix substrate (2) is provided with first connecting wirings (641, 643, 645, 647) connected to gate terminals (51) to which extraction wirings (611, 613, 615, 617) are connected, second connecting wirings (642, 644, 646) connected to gate terminals (51) to which extraction wirings (612, 614, 616) are connected,...

Led light disposed on a flexible substrate and connected with a printed 3d conductor
10/31/13 - 20130285073 - An example includes subject matter (such as an apparatus) comprising a planar substrate including a first surface that is planar, at least one bare light emitting diode (“LED”) die coupled to the substrate and conductive ink electrically coupling the at least one bare LED die, wherein the conductive ink is...

Luminescent device and manufacturing method for luminescent device and semiconductor device
10/31/13 - 20130285074 - A luminescent device and a manufacturing method for the luminescent device and a semiconductor device which are free from occurrence of cracks in a compound semiconductor layer due to the internal stress in the compound semiconductor layer at the time of chemical lift-off. The luminescent device manufacturing method includes forming...

Light emitting diode with high light extraction efficiency and method for manufacturing the same
10/03/13 - 20130256702 - A light emitting diode includes a light emitting structure, a transparent conductive layer and a transparent protecting layer formed in sequence. A plurality of holes are defined in the transparent protecting layer to expose the transparent conductive layer out of the transparent protecting layer. A plurality of micro-structures are formed...

Method of making a light-emitting device and the light-emitting device
09/12/13 - 20130234166 - This disclosure discloses a method of making a light-emitting device. The method comprises: providing a light-emitting wafer having an orientation flat portion and comprises a substrate and a light-emitting stack formed on the substrate; forming a first line along a direction which is neither parallel nor perpendicular to the orientation...

Light-emitting diode chip and method for producing the same
09/05/13 - 20130228798 - wherein a side area (4a) of the mirror layer (4) is completely covered by the insulation layer (5) in the region of the perforation (41)....

Method for producing a silicone foil, silicone foil and optoelectronic semiconductor component comprising a silicone foil
09/05/13 - 20130228799 - A method of producing a silicone foil for use in an optoelectronic semiconductor component by molding including introducing a mold foil into a mold, introducing a carrier foil into the mold, wherein the carrier foil is fitted on a substrate foil and the substrate foil projects laterally beyond the carrier...

Light emitting diode and method for manufacturing the same
08/29/13 - 20130221378 - An LED manufacturing method includes the steps of forming a first insulator film on a semiconductor layer, forming a laminated body including a mask layer and an electrode on the first insulator film, forming a second insulator film to cover the laminated body and a first region of the first...

Semiconductor element and manufacturing method thereof
08/22/13 - 20130214292 - A manufacturing method of a semiconductor element which can improve productivity and reliability, comprises a step of forming a device structure layer including a semiconductor layer on a first substrate; a step of forming a first metal layer on the device structure layer; a step of forming a second metal...

Optoelectronic semiconductor chip and method for producing same
08/01/13 - 20130193450 - An optoelectronic semiconductor chip includes a semiconductor layer stack and a radiation exit face or radiation entrance face, wherein the semiconductor layer stack includes an active layer that generates or receives electromagnetic radiation, and a plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or...

Method for preparing a gaas substrate for a ferromagnetic semiconductor, method for manufacturing one such semiconductor, resulting substrate and semiconductor, and uses of said semiconductor
07/04/13 - 20130168702 - A method is provided for preparing a surface of a GaAs substrate (001) such that it can receive a ferromagnetic semiconductor deposited by epitaxy, as well as a substrate thus prepared, method for manufacturing one such semiconductor deposited on the substrate, the resulting semiconductor, and uses thereof. The preparation method...

Light emitting diode and manufacturing method thereof
06/27/13 - 20130161652 - A light emitting diode (LED) includes a substrate, a buffer layer and an epitaxial structure. The substrate has a first surface with a patterning structure formed thereon. The patterning structure includes a plurality of projections. The buffer layer is arranged on the first surface of the substrate. The epitaxial structure...

Light emitting device and method of driving the light emitting device
05/23/13 - 20130126912 - A light emitting device that achieves long life, and which is capable of performing high duty ‘drive,’ by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line...

Display device and method for fabricating the same
05/16/13 - 20130119408 - An inexpensive display device, as well as an electrical apparatus employing the same, can be provided. In the display device in which a pixel section and a driver circuit are included on one and the same insulating surface, the driver circuit includes a decoder 100 and a buffer section 101....

Solid state light emitting semiconductor device
05/09/13 - 20130112998 - A solid state light emitting semiconductor device including a substrate, a mesa epitaxy stacking structure, an insulating layer, a first type electrode and a second type electrode is provided. The mesa epitaxy stacking structure includes a first type semiconductor layer, an active layer and a second type semiconductor layer arranged...

Organic electroluminescent display device and method of fabricating the same
05/02/13 - 20130105821 - An organic electroluminescent display device includes a first electrode on a substrate, an organic layer including a light-emitting layer on the first electrode, a second electrode including lower and upper conductive layers sequentially stacked on the organic layer, and an insulating pattern extending into the organic layer through the lower...

Light emitting diode with chamfered top peripheral edge
04/25/13 - 20130099254 - A light emitting diode includes a substrate and a light emitting structure. The light emitting structure includes a light outputting surface away from the substrate and a plurality of sidewalls adjoining the light outputting surface. A top peripheral edge interconnecting the light outputting surface and the sidewalls of the light...

Semiconductor light emitting device including zinc oxide-based transparent conductive thin film, and fabrication method thereof
04/25/13 - 20130099255 - There is provided a semiconductor light emitting device having a zinc oxide-based transparent conductive thin film in which a Group III element is doped to have waveforms having a plurality of periods in a thickness direction....

Leds and methods for manufacturing the same
02/28/13 - 20130049015 - A light emitting diode (LED) is disclosed. The LED includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and a patterned structure. The first semiconductor layer having first and second regions is positioned on the substrate, wherein the first region is thicker than the second...

Semiconductor light emitting chip and method for processing substrate
02/14/13 - 20130037825 - Disclosed is a semiconductor light emitting chip (20) that is composed of: a substrate (10), which has the C plane of a sapphire single crystal as the front surface, and the side surfaces (25, 26) configured of planes that intersect all the planes equivalent to the M plane of the...

Substrate assembly for crystal growth and fabricating method for light emitting device using the same
01/31/13 - 20130026498 - A substrate assembly on which a first conduction-type semiconductor layer, an active layer and a second conduction-type semiconductor layer are formed is disclosed, the substrate assembly comprising a first substrate, a second substrate and a bonding layer interposed there between. In the substrate assembly, the thermal expansion coefficient of the...

Semiconductor light emitting element
01/17/13 - 20130015470 - The semiconductor light emitting device of the present invention includes a semiconductor layer, a first electrode and a second electrode arranged to interpose the semiconductor layer therebetween, an insulating layer provided to the semiconductor layer at the same side as the second electrode and opposite to the first electrodes so...

Method of manufacture of light-emitting element and light-emitting element manufactured thereby
01/10/13 - 20130009172 - An object of the invention is to provide a method of manufacturing a light-emitting element, in which residue from a fixing resin layer is less likely to be left on a semiconductor layer and a supporting base in the case of manufacturing the light-emitting element by a laser lift-off technique....

Electronic device
01/03/13 - 20130001594 - A method of making an electronic device comprising a double bank well-defining structure, which method comprises: providing an electronic substrate; depositing a first insulating material on the substrate to form a first insulating layer; depositing a second insulating material on the first insulating layer to form a second insulating layer;...

Method of manufacturing an oled device with spatially isolated light-emitting areas
01/03/13 - 20130001595 - The invention describes a method of forming spatially isolated light- emitting areas (R1, R2, R3) on a common substrate (11) of an OLED device (1) comprising a plurality of device layers (12, 15, 16), which device layers (12, 15, 16) comprise an active layer (15) enclosed between a first electrode...

Method for manufacturing semiconductor light emitting element, semiconductor light emitting element, lamp, electronic device and mechanical apparatus
12/27/12 - 20120326169 - Provided is a method for manufacturing a semiconductor light emitting element (1) in which a defect is less likely to occur in a light emitting layer and a p-type semiconductor layer due to the surface of a second n-type semiconductor layer and which is capable of obtaining a high output....

Semiconductor light emitting device
12/20/12 - 20120319138 - According to one embodiment, in a semiconductor light emitting device, a substrate includes a first surface and a second surface opposite to each other, lateral surfaces intersected with the first surface and the second surface, first regions each provided on the lateral surface, and second regions each provided on the...

Organic electroluminescent member and method for producing organic electroluminescent element
12/20/12 - 20120319139 - Provided is an organic electroluminescent member comprising: a positive electrode and a negative electrode on a substrate; multiple organic layers which include at least a positive hole transport layer, a light-emitting layer and an electron transport layer, and which are arranged between the positive electrode and the negative electrode; and...

Nitride semiconductor device and nitride semiconductor layer growth substrate
11/29/12 - 20120299015 - According to one embodiment, a nitride semiconductor device includes a substrate and a semiconductor functional layer. The substrate is a single crystal. The semiconductor functional layer is provided on a major surface of the substrate and includes a nitride semiconductor. The substrate includes a plurality of structural bodies disposed in...

Organic layer deposition apparatus and method of manufacturing organic light emitting display device using the organic layer deposition apparatus
11/29/12 - 20120299016 - An organic layer deposition apparatus capable of protecting or preventing a patterning slit sheet from sagging, and a method of manufacturing an organic light-emitting display device by using the organic layer deposition apparatus....

Light-emitting device and manufacturing method thereof
11/01/12 - 20120273804 - When a hollow structure in which a light-emitting element is provided between a pair of substrates is used in order to prevent oxygen or moisture from reaching the light-emitting element, light leakage to an adjacent pixel easily occurs as compared to a structure in which a space between a pair...

Method for producing silicon layers
11/01/12 - 20120273805 - The invention relates to a liquid-phase method for the thermal production of silicon layers on a substrate, wherein at least one higher silicon that can be produced from at least one hydridosilane of the generic formula SiaH2a+2 (with a=3-10) being applied to a substrate and then being thermally converted to...

Method for producing semiconductor light-emitting chip and semiconductor light-emitting chip
10/18/12 - 20120261678 - In producing a semiconductor light-emitting chip whose substrate is composed of a sapphire single crystal, cracking in semiconductor light-emitting elements in the obtained semiconductor light-emitting chip is suppressed. A semiconductor light-emitting chip is obtained by forming, on an element-group formation substrate on a front surface of which semiconductor light-emitting elements...

Light-emitting device and method of fabricating the same
10/18/12 - 20120261679 - A light-emitting device and a method of fabricating the same, in which the light emission characteristics of the light-emitting device in the UV range are maximized such that a high-efficiency light-emitting device can be produced at low cost. For this, the method includes the step of forming a zinc oxide...

Organic electroluminescence element
10/11/12 - 20120256197 - The organic electroluminescence device includes an anode, a cathode, a first electron injection layer, an electron transport layer, and a light emitting layer. The first electron injection layer is made of alkali metal and is formed between the anode and the cathode. The electron transport layer is formed between the...

Semiconductor light emitting device and head mount display device
10/04/12 - 20120248464 - A semiconductor light emitting device includes a thin-film semiconductor light emitting element, a substrate, a first insulation layer having a surface to which the thin-film semiconductor light emitting element is bonded, a first metal layer composed of aluminum and disposed on a side of the first insulation layer facing the...

Light-emitting element, light-emitting device, lighting device, and electronic device
09/20/12 - 20120235166 - An object is to provide a light-emitting element which exhibits light emission with high luminance and can be driven at low voltage. Another object is to provide a light-emitting device or an electronic device with reduced power consumption. Between an anode and a cathode, n (n is a natural number...