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Diamond Or Silicon Carbide

Diamond Or Silicon Carbide patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

Related Categories:

Active Solid-state Devices (e.g., Transistors, Solid-state Diodes)


Specified Wide Band Gap (1.5ev) Semiconductor Material Other Than Gaasp Or Gaalas > Diamond Or Silicon Carbide



Semiconductor component
03/05/15 - 20150060881 - A semiconductor component (1, 20, 30) comprising a semiconductor substrate (3) composed of silicon carbide and comprising separate electrodes (4, 5) applied thereto, said electrodes each comprising at least one monolayer of epitaxial graphene (11) on silicon carbide, in such a way that a current channel is formed between the...

Silicon carbide semiconductor device
03/05/15 - 20150060882 - A silicon carbide semiconductor device includes: a drift layer of the a first conduction type; a guard ring region of a second conduction type formed in annular form in a portion of one surface of the drift layer; a field insulating film formed on the one surface of the drift...

Semiconductor device and method for manufacturing the same
03/05/15 - 20150060883 - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a first electrode, a first insulating section, and a second insulating section. The first semiconductor region includes silicon carbide, is of a first conductivity type and includes first and second...

Semiconductor device
03/05/15 - 20150060884 - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, and a first electrode. The first semiconductor region is of a first conductivity type. The second semiconductor region is provided on the first semiconductor region, and is of a second...

Semiconductor device and method of manufacturing the same
03/05/15 - 20150060885 - A semiconductor device according to an embodiment includes an i-type or a p-type first diamond semiconductor layer, an n-type second diamond semiconductor layer provided on the first diamond semiconductor layer, a mesa structure and an n-type first diamond semiconductor region provided on the side surface. The mesa structure includes the...

Semiconductor substrate
03/05/15 - 20150060886 - A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than the area within 5 mm from the outer circumference. When the central area is divided into square areas of 1 mm×1 mm, in...

Normally-off power jfet and manufacturing method thereof
03/05/15 - 20150060887 - In general, in a semiconductor active element such as a normally-off JFET based on SiC in which an impurity diffusion speed is significantly lower than in silicon, gate regions are formed through ion implantation into the side walls of trenches formed in source regions. However, to ensure the performance of...

Semiconductor device
02/26/15 - 20150053998 - A base layer is used that has an N-type SiC layer formed in a surface layer on the front surface side of an N-type SiC substrate, and a P-type region is formed on a surface of the N-type SiC layer with an N-type source region selectively formed in a surface...

Wide bandgap insulated gate semiconductor device
02/26/15 - 20150053999 - A wide bandgap insulated gate semiconductor device includes a semiconductor substrate made of semiconductor having a bandgap wider than silicon; n− drift layer over the semiconductor substrate; p-channel regions selectively disposed over the drift layer; n+ semiconductor regions selectively disposed in respective surfaces in the channel regions; a plurality of...

Method for treating surface of diamond thin film, method for forming transistor, and sensor device
02/26/15 - 20150054000 - A method for treating a surface of a diamond thin film according to one aspect of the present invention performs one of a first substitution process for substituting part of hydrogen-terminals of a diamond thin film with fluorine-terminals in the absence of a fluorocarbon deposition on the surface of diamond...

Silicon carbide semiconductor device and method for manufacturing the same
02/19/15 - 20150048382 - In a silicon carbide semiconductor device, a p-type SiC layer is disposed in a corner of a bottom of a trench. Thus, even if an electric field is applied between a drain and a gate when a MOSFET is turned off, a depletion layer in a pn junction between the...

Silicon carbide semiconductor element and fabrication method thereof
02/19/15 - 20150048383 - An Ni2Si layer and a TiC layer formed by sintering after deposition of a thin layer including Ni and a thin layer including Ti on a silicon carbide substrate have a structure in which the TiC layer is precipitated on a surface of the Ni2Si layer. A multilayer thin film...

Semiconductor device
02/19/15 - 20150048384 - In a JBS diode using a wide band gap semiconductor, the wide band gap semiconductor has a large built-in voltage, which sometimes causes difficulties for the pn diode portion to turn on, resulting in a problem that resistance to surge currents is not sufficiently ensured. In order to solve this...

Transistor with bonded gate dielectric
02/12/15 - 20150041824 - A method for forming a semiconductor device includes forming a dielectric layer on a first substrate and wafer bonding the dielectric layer of the first substrate to a second substrate including SiC with a passivating layer formed on the SiC. A portion of the first substrate is removed from a...

Semiconductor device, high electron mobility transistor (hemt) and method of manufacturing
02/12/15 - 20150041825 - A semiconductor device includes a substrate, a channel layer over the substrate, an active layer over the channel layer, and a barrier structure between the substrate and the channel layer. The active layer is configured to cause a two dimensional electron gas (2DEG) to be formed in the channel layer...

Transistor with bonded gate dielectric
02/12/15 - 20150041826 - A method for forming a semiconductor device includes forming a dielectric layer on a first substrate and wafer bonding the dielectric layer of the first substrate to a second substrate including SiC with a passivating layer formed on the SiC. A portion of the first substrate is removed from a...

Bonding structure including metal nano particles and bonding method using metal nano particles
02/12/15 - 20150041827 - A bonding structure including metal nano particles includes a first member having a metal surface on at least one side, a second member having a metal surface on at least one side, the second member being disposed such that the metal surface of the second member faces the metal surface...

Semiconductor device, and method for manufacturing semiconductor device
02/12/15 - 20150041828 - [ Solution Means] A semiconductor device 1 includes an n-type SiC layer 2 having a first surface 2A, a second surface 2B, and end faces 2C, a p-type voltage relaxing layer 7 formed in the SiC layer 2 so as to be exposed to the end portion of the first...

Electronic circuit device
02/12/15 - 20150041829 - A normally-off type silicon carbide junction FET has a problem that the gate thereof is not easy to use due to inferiority in the characteristics of it. This problem occurs because in order to achieve normally-off, the gate voltage should be off at 0V and at the same time, the...

Schottky diode
02/12/15 - 20150041830 - A semiconductor system of a Schottky diode is described having an integrated PN diode as a clamping element, which is suitable in particular as a Zener diode having a breakdown voltage of approximately 20 V for use in motor vehicle generator systems. The semiconductor system of the Schottky diode includes...

Production of an integrated circuit including electrical contact on sic
02/12/15 - 20150041831 - Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on...

Method and system for a semiconductor device with integrated transient voltage suppression
02/05/15 - 20150034969 - A power transistor assembly and method of operating the assembly are provided. The power transistor assembly includes integrated transient voltage suppression on a single semiconductor substrate and includes a transistor formed of a wide band gap material, the transistor including a gate terminal, a source terminal, and a drain terminal,...

Semiconductor device and method for producing same
02/05/15 - 20150034970 - A semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode being in contact with a surface of the semiconductor layer. The semiconductor layer includes a drift layer that forms the surface of the semiconductor layer and a high-resistance layer...

Semiconductor device and method for manufacturing same
02/05/15 - 20150034971 - [ Solution Means] A semiconductor device 1 has an MIS structure including an SiC epitaxial layer 3, a gate insulating film 9 and a gate electrode 10 formed on the gate insulating film 9. A gate insulating film 9 includes a silicon oxide film in contact with the SiC epitaxial...

Semiconductor device
02/05/15 - 20150034972 - A semiconductor device according to an embodiment includes, a first conductivity type semiconductor substrate including one of Si and SiC; a second conductivity type semiconductor region at a surface of the semiconductor substrate, a GaN-based semiconductor layer on the semiconductor substrate, and a lateral semiconductor element at the GaN-based semiconductor...

Semiconductor device and method of manufacturing the same
02/05/15 - 20150034973 - A semiconductor device of an embodiment includes: an n-type first SiC epitaxial layer; a p-type second SiC epitaxial layer provided on the first SiC epitaxial layer and contains a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the...

Semiconductor device
02/05/15 - 20150034974 - A semiconductor device of an embodiment includes: an n-type first SiC epitaxial layer; a p-type second SiC epitaxial layer on the first SiC epitaxial layer containing a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A...

Forming embedded source and drain regions to prevent bottom leakage in a dielectrically isolated fin field effect transistor (finfet) device
01/29/15 - 20150028348 - Approaches for isolating source and drain regions in an integrated circuit (IC) device (e.g., a fin field effect transistor (finFET)) are provided. Specifically, the FinFET device comprises a gate structure formed over a finned substrate; an isolation oxide beneath an active fin channel of the gate structure; an embedded source...

Method to induce strain in 3-d microfabricated structures
01/29/15 - 20150028349 - Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic...

Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling
01/29/15 - 20150028350 - Methods of forming a semiconductor structure include the use of channeled implants into silicon carbide crystals. Some methods include providing a silicon carbide layer having a crystallographic axis, heating the silicon carbide layer to a temperature of about 300° C. or more, implanting dopant ions into the heated silicon carbide...

Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions
01/29/15 - 20150028351 - A semiconductor device structure according to some embodiments includes a silicon carbide substrate having a first conductivity type, a silicon carbide drift layer having the first conductivity type on the silicon carbide substrate and having an upper surface opposite the silicon carbide substrate, and a buried junction structure in the...

Semiconductor device
01/29/15 - 20150028352 - [Solution Means] A semiconductor device 1 includes a substrate 7 made of an n+ type SiC and having a predetermined off-angle, a drift layer 8 made of an n− type SiC and formed on the substrate 7, a plurality of unit cells 10 demarcated in the drift layer 8 by...

Schottky barrier detection devices having a 4h-sic n-type epitaxial layer
01/29/15 - 20150028353 - A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12°; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a...

Silicon carbide devices having smooth channels
01/29/15 - 20150028354 - Methods of forming silicon carbide power devices are provided. An n− silicon carbide layer is provided on a silicon carbide substrate. A p-type silicon carbide well region is provided on the n− silicon carbide layer. A buried region of p+ silicon carbide is provided on the p-type silicon carbide well...

Method of forming a semiconductor device
01/29/15 - 20150028355 - A semiconductor device having dislocations and a method of fabricating the semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate having an isolation feature therein and two gate stacks overlying the substrate, wherein one of...

Enhanced gate dielectric for a field effect device with a trenched gate
01/22/15 - 20150021623 - The present disclosure relates to a silicon carbide (SiC) field effect device that has a gate assembly formed in a trench. The gate assembly includes a gate dielectric that is an dielectric layer, which is deposited along the inside surface of the trench and a gate dielectric formed over the...

Lift-off of epitaxial layers from silicon carbide or compound semiconductor substrates
01/22/15 - 20150021624 - A method to remove epitaxial semiconductor layers from a substrate by growing an epitaxial sacrificial layer on the substrate where the sacrificial layer is a transition metal nitride (TMN) or a TMN ternary compound, growing one or more epitaxial device layers on the sacrificial layer, and separating the device layers...

Semiconductor fin isolation by a well trapping fin portion
01/22/15 - 20150021625 - A bulk semiconductor substrate including a first semiconductor material is provided. A well trapping layer including a second semiconductor material and a dopant is formed on a top surface of the bulk semiconductor substrate. The combination of the second semiconductor material and the dopant within the well trapping layer is...

Bipolar transistor and a method for manufacturing a bipolar transistor
01/15/15 - 20150014704 - A bipolar transistor includes a semiconductor structure including an emitter area, a base area and a collector area. The emitter area is electrically connected to an emitter contact of the bipolar transistor. Further, the emitter area has a first conductivity type. The base area is electrically connected to a base...

Semiconductor device
01/15/15 - 20150014705 - An optical fiber is provided between a photodiode and a semiconductor active portion of a wide gap semiconductor element forming portion such that emitted light at the time of light emission of the semiconductor active portion of the wide gap semiconductor element forming portion is incident from an incident surface...

Vertical hetero wide bandgap transistor
01/15/15 - 20150014706 - A vertical hetero transistor provides a wide bandgap, increases the breakdown voltage or reduces the on resistance of the switching transistor or both....

Method for producing a mos stack on a diamond substrate
01/15/15 - 20150014707 - The invention relates to a method for producing a component comprising a conductive grid insulated from a semiconductor monocrystalline diamond substrate by an insulating region, comprising the following steps: a) oxygenating the surface of the substrate so as to replace the hydrogen surface terminations of the substrate with oxygen surface...

Semiconductor devices and methods of manufacture
01/08/15 - 20150008446 - A method of manufacturing a semiconductor device is presented. The method includes providing a semiconductor layer comprising silicon carbide, wherein the semiconductor layer comprises a first region doped with a first dopant type. The method further includes implanting the semiconductor layer with a second dopant type using a single implantation...

Silicon carbide device and a method for manufacturing a silicon carbide device
01/08/15 - 20150008447 - A silicon carbide device includes an epitaxial silicon carbide layer having a first conductivity type and a buried lateral silicon carbide edge termination region within the epitaxial silicon carbide layer and having a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide...

Metal-oxide-semiconductor (mos) devices with increased channel periphery and methods of manufacture
01/08/15 - 20150008448 - A semiconductor device includes a drift layer disposed on a substrate. The drift layer has a non-planar surface having a plurality of repeating features oriented parallel to a length of a channel of the semiconductor device. Further, each the repeating features have a dopant concentration higher than a remainder of...

Metal-oxide-semiconductor (mos) devices with increased channel periphery and methods of manufacture
01/08/15 - 20150008449 - A semiconductor device includes a silicon carbide (SiC) drift layer disposed on a (0001) oriented SiC substrate. The SiC drift layer has a non-planar surface including a plurality of repeating features that are oriented parallel to a length of a channel of the semiconductor device. Further, the channel region is...

Wide band gap semiconductor device
01/08/15 - 20150008450 - The present invention includes a second source layer formed on a surface layer of a p base layer in the same step as that of forming a n+ source layer to sandwich a field insulating film, a second gate electrode being the same layer as a gate polysilicon and formed...

Formation of self-aligned source for split-gate non-volatile memory cell
01/08/15 - 20150008451 - A memory device having a pair of conductive floating gates with inner sidewalls facing each other, and disposed over and insulated from a substrate of first conductivity type. A pair of spaced apart conductive control gates each disposed over and insulated from one of the floating gates, and each including...

Semiconductor device and method of fabricating the same
01/08/15 - 20150008452 - A semiconductor device comprises a substrate and first and second stress-generating epitaxial regions on the substrate and spaced apart from each other. A channel region is on the substrate and positioned between the first and second stress-generating epitaxial regions. A gate electrode is on the channel region. The channel region...

Substrate, semiconductor device, and method of manufacturing the same
01/08/15 - 20150008453 - A substrate capable of achieving a lowered probability of defects produced in a step of forming an epitaxial film or a semiconductor element, a semiconductor device including the substrate, and a method of manufacturing a semiconductor device are provided. A substrate is a substrate having a front surface and a...

Substrate, semiconductor device, and method of manufacturing the same
01/08/15 - 20150008454 - A substrate capable of achieving a lowered probability of defects produced in a step of forming an epitaxial film or a semiconductor element, a semiconductor device including the substrate, and a method of manufacturing a semiconductor device are provided. A substrate is a substrate having a front surface and a...

Over-voltage protection of gallium nitride semiconductor devices
01/01/15 - 20150001551 - A monolithically integrated semiconductor assembly is presented. The semiconductor assembly includes a substrate including silicon carbide (SiC), and gallium nitride (GaN) semiconductor device is fabricated on the substrate. The semiconductor assembly further includes at least one transient voltage suppressor (TVS) structure fabricated in or on the substrate, wherein the TVS...

Semiconductor device
01/01/15 - 20150001552 - According to one embodiment, a semiconductor device includes a first semiconductor region, a first electrode, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a fifth semiconductor region, and a second electrode. The first electrode forms a Schottky junction with the first region. The second region is...

Semiconductor device
01/01/15 - 20150001553 - A semiconductor device includes: a first silicon carbide semiconductor layer; a p-type first impurity region provided in the first silicon carbide semiconductor layer; and a first ohmic electrode forming ohmic contact with the p-type first impurity region. The first ohmic electrode is a silicon alloy containing nitrogen, an average concentration...

Silicon carbide semiconductor device
01/01/15 - 20150001554 - A silicon carbide semiconductor device includes a low-concentration n-type drift layer deposited on a silicon carbide substrate to form a semiconductor substrate. A first front surface metal layer, which forms a Schottky contact with the semiconductor substrate, is formed on a front surface of the semiconductor substrate. An outer circumferential...

Methods for coating a substrate with an amphiphilic compound
01/01/15 - 20150001555 - Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting...

Vertical power transistor with built-in gate buffer
12/25/14 - 20140374773 - A vertical power transistor is monolithically packaged on a semiconductor die with gate buffer circuitry. The gate buffer circuitry is adapted to deliver a biasing voltage to a gate contact of the vertical power transistor for switching the device between an ON state and an OFF state. By monolithically packaging...

Semiconductor device and method for manufacturing same
12/25/14 - 20140374774 - This semiconductor device includes a silicon carbide layer of a first conductivity type having first and second principal surfaces and including an element region and a terminal region surrounding the element region on the first principal surface. The silicon carbide layer includes a first dopant layer of the first conductivity...

Electronic component and manufacturing method for electronic component
12/25/14 - 20140374775 - A first metal film, of which major component is copper, is formed on a surface of a conductive portion which becomes a front surface electrode of a semiconductor element. A second metal film of which major component is silver is formed on a surface of the first metal film. A...

High-voltage cascaded diode with hemt and monolithically integrated semiconductor diode
12/18/14 - 20140367700 - An embodiment of a cascaded diode having a breakdown voltage exceeding 300V includes an HEMT and a Si Schottky diode. The HEMT includes a gate, a drain, a source, and a two-dimensional electron gas channel region connecting the source and the drain and controlled by the gate. The HEMT has...

Semiconductor device and method of manufacturing semiconductor device
12/18/14 - 20140367701 - The semiconductor device includes; a semiconductor element in which a metallization layer is formed on the backside side; a metallic lead frame that is arranged in parallel, with a distance spaced apart from the semiconductor element; a first bonding layer that is provided between the semiconductor element and the lead...

Semiconductor device and method of manufacturing the same
12/18/14 - 20140367702 - An object is to provide a fin integrated type semiconductor device and a method of manufacturing the same, which are provided with a simple structure and good heat dissipation characteristics. The semiconductor device includes: a base plate on which fins arranged in a standing condition are formed on a first...

Solid state light sources based on thermally conductive luminescent elements containing interconnects
12/18/14 - 20140367703 - Solid state light sources based on LEDs mounted on or within thermally conductive luminescent elements provide both convective and radiative cooling. Low cost self-cooling solid state light sources can integrate the electrical interconnect of the LEDs and other semiconductor devices. The thermally conductive luminescent element can completely or partially eliminate...

Semiconductor devices
12/11/14 - 20140361313 - A method of manufacturing a semiconductor device includes forming first and second gate structures on a substrate in first and second regions, respectively, forming a first capping layer on the substrate by a first high density plasma process, such that the first capping layer covers the first and second gate...

Semiconductor alloy fin field effect transistor
12/11/14 - 20140361314 - Semiconductor alloy fin structures can be formed by recessing a semiconductor material layer including a first semiconductor material to form a trench, and epitaxially depositing a semiconductor alloy material of the first semiconductor material and a second semiconductor material within the trench. The semiconductor alloy material is epitaxially aligned to...

Semiconductor device and method of manufacturing the same
12/11/14 - 20140361315 - A semiconductor device according to one embodiment having a first region comprising a first dopant type, a second region adjacent the first region haivng a second dopant type and a channel region. There is a third region segregated from the channel region having a second dopant type, wherein the third...

Wide band gap semiconductor wafers grown and processed in a microgravity environment and method of production
12/04/14 - 20140353682 - Wide band gap semiconductor wafers with previously unattainable characteristics and the method of processing and producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to process silicon carbide and other similar wide band gap semiconductors in a microgravity environment. The wafers are placed...

Semiconductor device and method of manufacturing the same
12/04/14 - 20140353683 - In a semiconductor substrate preparation step, a semiconductor substrate which is made of SiC and in which a first semiconductor region of a first conductivity type is formed is prepared. In a second semiconductor region forming step, a second semiconductor region is formed by implanting an impurity of a second...

Silicon carbide epitaxial wafer and method for fabricating the same
12/04/14 - 20140353684 - A method for fabricating a silicon carbide epitaxial wafer according to the embodiment includes introducing a carbon source and a silicon source into a reactor in which a silicon carbide wafer is provided; heating the reactor; and adjusting an amount of the silicon source or the carbon source introduced into...

Semi-polar iii-nitride films and materials and method for making the same
12/04/14 - 20140353685 - A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been...

Semiconductor device
12/04/14 - 20140353686 - A semiconductor device having a low feedback capacitance and a low switching loss. The semiconductor device includes: a substrate; a drift layer formed on a surface of the semiconductor substrate; a plurality of first well regions formed on a surface of the drift layer; a source region which is an...