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Diamond Or Silicon Carbide

Diamond Or Silicon Carbide patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

Related Categories:

Active Solid-state Devices (e.g., Transistors, Solid-state Diodes)


Specified Wide Band Gap (1.5ev) Semiconductor Material Other Than Gaasp Or Gaalas > Diamond Or Silicon Carbide



High-voltage cascaded diode with hemt and monolithically integrated semiconductor diode
12/18/14 - 20140367700 - An embodiment of a cascaded diode having a breakdown voltage exceeding 300V includes an HEMT and a Si Schottky diode. The HEMT includes a gate, a drain, a source, and a two-dimensional electron gas channel region connecting the source and the drain and controlled by the gate. The HEMT has...

Semiconductor device and method of manufacturing semiconductor device
12/18/14 - 20140367701 - The semiconductor device includes; a semiconductor element in which a metallization layer is formed on the backside side; a metallic lead frame that is arranged in parallel, with a distance spaced apart from the semiconductor element; a first bonding layer that is provided between the semiconductor element and the lead...

Semiconductor device and method of manufacturing the same
12/18/14 - 20140367702 - An object is to provide a fin integrated type semiconductor device and a method of manufacturing the same, which are provided with a simple structure and good heat dissipation characteristics. The semiconductor device includes: a base plate on which fins arranged in a standing condition are formed on a first...

Solid state light sources based on thermally conductive luminescent elements containing interconnects
12/18/14 - 20140367703 - Solid state light sources based on LEDs mounted on or within thermally conductive luminescent elements provide both convective and radiative cooling. Low cost self-cooling solid state light sources can integrate the electrical interconnect of the LEDs and other semiconductor devices. The thermally conductive luminescent element can completely or partially eliminate...

Semiconductor devices
12/11/14 - 20140361313 - A method of manufacturing a semiconductor device includes forming first and second gate structures on a substrate in first and second regions, respectively, forming a first capping layer on the substrate by a first high density plasma process, such that the first capping layer covers the first and second gate...

Semiconductor alloy fin field effect transistor
12/11/14 - 20140361314 - Semiconductor alloy fin structures can be formed by recessing a semiconductor material layer including a first semiconductor material to form a trench, and epitaxially depositing a semiconductor alloy material of the first semiconductor material and a second semiconductor material within the trench. The semiconductor alloy material is epitaxially aligned to...

Semiconductor device and method of manufacturing the same
12/11/14 - 20140361315 - A semiconductor device according to one embodiment having a first region comprising a first dopant type, a second region adjacent the first region haivng a second dopant type and a channel region. There is a third region segregated from the channel region having a second dopant type, wherein the third...

Wide band gap semiconductor wafers grown and processed in a microgravity environment and method of production
12/04/14 - 20140353682 - Wide band gap semiconductor wafers with previously unattainable characteristics and the method of processing and producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to process silicon carbide and other similar wide band gap semiconductors in a microgravity environment. The wafers are placed...

Semiconductor device and method of manufacturing the same
12/04/14 - 20140353683 - In a semiconductor substrate preparation step, a semiconductor substrate which is made of SiC and in which a first semiconductor region of a first conductivity type is formed is prepared. In a second semiconductor region forming step, a second semiconductor region is formed by implanting an impurity of a second...

Silicon carbide epitaxial wafer and method for fabricating the same
12/04/14 - 20140353684 - A method for fabricating a silicon carbide epitaxial wafer according to the embodiment includes introducing a carbon source and a silicon source into a reactor in which a silicon carbide wafer is provided; heating the reactor; and adjusting an amount of the silicon source or the carbon source introduced into...

Semi-polar iii-nitride films and materials and method for making the same
12/04/14 - 20140353685 - A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been...

Semiconductor device
12/04/14 - 20140353686 - A semiconductor device having a low feedback capacitance and a low switching loss. The semiconductor device includes: a substrate; a drift layer formed on a surface of the semiconductor substrate; a plurality of first well regions formed on a surface of the drift layer; a source region which is an...

Vertical-channel type junction sic power fet and method of manufacturing same
11/27/14 - 20140346528 - In order to secure the performance of a SiC-based JFET having an impurity diffusion rate lower than silicon-based one, a gate depth is secured while precisely controlling a distance between gate regions, instead of forming gate regions by ion implantation into the side wall of a trench. This means that...

Semiconductor device and method for manufacturing the semiconductor device
11/27/14 - 20140346529 - A semiconductor-device manufacturing method of the present invention includes a step of selectively implanting impurity ions into a surface of an SiC semiconductor layer and forming impurity regions and a step of activating the impurity ions by annealing the SiC semiconductor layer at a temperature of 1400° C. or more...

Semiconductor device and method of manufacturing the same
11/27/14 - 20140346530 - A semiconductor device according to an embodiment of the present invention includes a SiC substrate, an AlN layer provided on the SiC substrate and having a maximum valley depth Rv of 5 nm or less in an upper surface, a channel layer provided on the AlN layer and composed of...

Sic semiconductor device and method for manufacturing the same
11/27/14 - 20140346531 - In a method which heats a layer including nickel and titanium on a SiC substrate (1) to form a nickel silicide layer (4) including titanium carbide, the layer including nickel and titanium is formed by vapor deposition or sputtering. The nickel silicide layer (4) is heated at a temperature that...

Semiconductor device with substrate via hole and method to form the same
11/20/14 - 20140339568 - A process to form a substrate via hole is disclosed. The process includes steps of (1) forming a semiconductor layer on a substrate; (2) forming a gate and an auxiliary electrode simultaneously on a semiconductor layer; and (3) etching the substrate and the semiconductor layer from the back surface of...

Semiconductor device
11/20/14 - 20140339569 - A semiconductor device formed on a silicon carbide substrate that has a front surface on which an electrode is provided and a back surface on which an electrode is provided includes a drain layer, a drift layer, a base layer, a gate electrode that is located in a trench that...

Access-resistant diode array device having enhanced stability
11/20/14 - 20140339570 - A device includes a substrate carrying an array of diodes, organized in rows and columns, and a peripheral substrate contact is arranged on at least one side of the array. The substrate includes one or more buried conducting lines electrically connected to the peripheral substrate contact and being positioned between...

Silicon carbide epitaxial wafer and manufacturing method therefor
11/20/14 - 20140339571 - A SiC epitaxial wafer obtained by forming a SiC epitaxial layer on a 4H—SiC single-crystal substrate that is tilted at an off-angle of 0.4° to 5°, wherein linear density of step bunchings, which are connected to shallow pits which are due to screw dislocation in the SiC epitaxial wafer, is...

Memory with carbon-containing silicon channel
11/20/14 - 20140339572 - A memory includes a first memory cell and a second memory cell formed over the first memory cell. Each of the first memory cell and the second memory cell includes a channel region comprising silicon and carbon, a control gate, and a dielectric stack between the channel region and the...

Semiconductor structure with different fins of finfets
11/13/14 - 20140332824 - A semiconductor structure for forming FinFETs is described. The semiconductor structure includes a semiconductor substrate, a plurality of odd fins of the FinFETs on the substrate, and a plurality of even fins of the FinFETs on the substrate between the odd fins of the FinFETs. The odd fins of the...

Silicon carbide barrier diode
11/06/14 - 20140327017 - Improved semiconductor devices are fabricated utilizing nickel gallide and refractory borides deposited onto a silicon carbide semiconductor substrate. Varying the deposition and annealing parameters of fabrication can provide a more thermally stable device that has greater barrier height and a low ideality. This improvement in the electrical properties allows use...

Power semiconductor device, method of manufacturing the device and bonding wire
11/06/14 - 20140327018 - It is an object of the present invention to provide a power semiconductor device, which is capable of being operable regardless of thermal stress generation, reducing a heat generation from wire, securing the reliability of bonding portion when the device is used for dealing with a large amount current and/or...

Wide bandgap semiconductor device
11/06/14 - 20140327019 - A wide bandgap semiconductor device includes a first conductive type high-concentration wide bandgap semiconductor substrate, a first conductive type low-concentration wide bandgap semiconductor deposited film which is formed on the semiconductor substrate, a metal film which is formed on the semiconductor deposited film so that a Schottoky interface region is...

Force detection device, and force transducer device
10/30/14 - 20140319538 - A force detection device includes a diamond piezoresistor including a highly orientated diamond into which boron is introduced as an impurity. The absolute value of the piezoresistance coefficient of the diamond piezoresistor is greater than the absolute value of a piezoresistance coefficient π11 or π12 in a case in which...

Semiconductor wafer manufacturing method, and semiconductor wafer
10/30/14 - 20140319539 - A method for manufacturing a semiconductor wafer includes a carbon layer formation step, a through hole formation step, a feed layer formation step, and an epitaxial layer formation step. In the carbon layer formation step, a carbon layer (71) is formed on a surface of a substrate (70) made of...

Semiconductor device
10/30/14 - 20140319540 - A semiconductor device is provided with a semiconductor substrate in which a power semiconductor element part and a temperature sensing diode part are provided. The temperature sensing diode part includes a first semiconductor region, a second semiconductor region, a first base region, and a first drift region. In the semiconductor...

Voidlessly encapsulated semiconductor die package
10/30/14 - 20140319541 - A system can include a semiconductor die having a first side and a second side opposite the first side. The system can also include a first slug coupled to a portion of the first side of the die. The system can further include a second slug coupled to a portion...

Molybdenum trioxide-coated hydrogen-terminated diamond surface and uses thereof
10/30/14 - 20140319542 - The present invention provides a conducting material comprising a carbon-based material selected from a diamond or an insulating diamond-like carbon, having a hydrogen-terminated surface and a layer of MoO3 coating said surface; as well as a method for the fabrication of such a material. The conducting material of the invention...

Fin field-effect transistors
10/30/14 - 20140319543 - A method is provided for fabricating a fin field-effect transistor. The method includes providing a semiconductor substrate; and forming a plurality of fins on top of the semiconductor substrate. The method also includes forming isolation structures between adjacent fins; and forming doping sidewall spacers in top portions of the isolation...

Apparatus and method for fabricating epi wafer and epi wafer
10/30/14 - 20140319544 - Further, an apparatus for fabricating an epi wafer according to the embodiment comprises a first chamber comprising an epi deposition part; a second chamber comprising a protective layer forming part and a cooling part; and a wafer transfer apparatus connected to lower portions of the first chamber and the second...

Method for deposition of silicon carbide and silicon carbide epitaxial wafer
10/30/14 - 20140319545 - A method for deposition of silicon carbide according to an embodiment includes preparing a wafer in a susceptor; introducing first etching gas into the susceptor; introducing second etching gas into the susceptor; producing an intermediate compound by introducing a reactive raw material into the susceptor; and forming a silicon carbide...

Semiconductor power device having a heat sink
10/23/14 - 20140312360 - A semiconductor device includes an electrically conducting carrier having a mounting surface. The semiconductor device further includes a metal block having a first surface facing the electrically conducting carrier and a second surface facing away from the electrically conducting carrier. A semiconductor power chip is disposed over the second surface...

Semiconductor element, semiconductor device and method for manufacturing semiconductor element
10/23/14 - 20140312361 - The semiconductor element has an electrode including: a Ni-inclusion metal layer containing nickel formed on a side of at least one surface of the semiconductor-element constituting part; a Ni-barrier metal layer formed outwardly on a side of the Ni-inclusion metal layer opposite to the side toward the semiconductor-element constituting part;...

Compound semiconductor device and method of manufacturing the same
10/23/14 - 20140312362 - An embodiment of a compound semiconductor device includes: a substrate; a compound semiconductor stacked structure of nitride over the substrate; a passivation film that covers the compound semiconductor stacked structure; a gate electrode, a source electrode, and a drain electrode at a level above the compound semiconductor stacked structure; and...

Semiconductor device
10/16/14 - 20140306239 - A semiconductor device includes a first conduction type semiconductor substrate, a first conduction type semiconductor deposition layer, a trench, second conduction type wells, a JFET region, a first conduction type first source region, a first source region, a trench-type source electrode, a gate insulator film, a gate electrode, and a...

Silicon carbide semiconductor device and manufacturing method of the same
10/09/14 - 20140299886 - A silicon carbide semiconductor device includes: a semiconductor substrate made of silicon carbide single crystal and having a principal surface and a backside; and an ohmic electrode contacting one of the principal surface and the backside of the semiconductor substrate in an ohmic manner. A boundary between the ohmic electrode...

Semiconductor devices comprising getter layers and methods of making and using the same
10/09/14 - 20140299887 - Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present...

Silicon carbide semiconductor device
10/09/14 - 20140299888 - A SiC semiconductor device capable of increasing a switching speed without destroying a gate insulating film. In addition, in a SiC-MOSFET including an n-type semiconductor substrate formed of SiC, a p-type semiconductor layer is entirely or partially provided on an upper surface of a p-type well layer that has a...

Semiconductor devices
10/09/14 - 20140299889 - A semiconductor device includes a first gate structure on a first region of a substrate and a second gate structure on a second region of the substrate, a first impurity region on an upper portion of the substrate adjacent to the first gate structure and a second impurity region on...

Semiconductor devices comprising getter layers and methods of making and using the same
10/09/14 - 20140299890 - Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present...

Semiconductor device
10/09/14 - 20140299891 - A semiconductor device that can improve reliability while suppressing increase of a conduction loss or a switching loss. In the semiconductor device, when a two-dimensional shape on a main surface of the semiconductor substrate is an unit cell, the shape being a repeating unit of a plurality of well regions...

Silicon carbide device and a method for manufacturing a silicon carbide device
10/02/14 - 20140291695 - A silicon carbide device includes an epitaxial silicon carbide layer including a first conductivity type and a buried lateral silicon carbide edge termination region located within the epitaxial silicon carbide layer including a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide...

Power electronics modules with solder layers having reduced thermal stress
10/02/14 - 20140291696 - Power electronics modules having solder layers with reduced thermal-stress are disclosed. In one embodiment, a power electronics module includes a power electronics device having a first surface, a second surface, a first edge, and a second edge opposite the first edge. The power electronics device has a device length measured...

Silicon carbide device and a method for forming a silicon carbide device
10/02/14 - 20140291697 - A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer...

Low micropipe 100 mm silicon carbide wafer
10/02/14 - 20140291698 - A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm−2....

Ceramic/copper circuit board and semiconductor device
10/02/14 - 20140291699 - A ceramic/copper circuit board of an embodiment includes a ceramic substrate and first and second copper plates bonded to surfaces of the ceramic substrate via bonding layers containing active metal elements. In cross sections of end portions of the first and second copper plates, a ratio (C/D) of an area...

Sic single crystal, sic wafer, and semiconductor device
10/02/14 - 20140291700 - An SiC single crystal includes a low dislocation density region (A) where the density of dislocations each of which has a Burgers vector in a {0001} in-plane direction (mainly a direction parallel to a <11-20> direction) is not more than 3,700 cm/cm3. Such an SiC single crystal is obtained by:...

Semiconductor device
10/02/14 - 20140291701 - An object of the present invention is to provide a semiconductor device that allows the life of solder joint parts of electronic components to be increased. The semiconductor device according to the present invention includes ceramic, an upper pattern formed on the ceramic, and a resistor connected onto the upper...

Method for manufacturing a silicon carbide device and a silicon carbide device
09/25/14 - 20140284615 - A method for manufacturing a silicon carbide device includes providing a silicon carbide wafer and manufacturing a mask layer on top of the silicon carbide wafer. Further, the method includes structuring the mask layer at an edge of a silicon carbide device to be manufactured, so that the mask layer...

Self-formation of high-density arrays of nanostructures
09/25/14 - 20140284616 - A method for forming nanostructures includes bonding a flexible substrate to a crystalline semiconductor layer having a two-dimensional material formed on a side opposite the flexible substrate. The crystalline semiconductor layer is stressed in a first direction to initiate first cracks in the crystalline semiconductor layer. The first cracks are...

Semiconductor device
09/25/14 - 20140284617 - According to embodiments, a semiconductor device includes an insulating substrate, a first electrode plate disposed on the insulating substrate, a second electrode plate disposed on the insulating substrate, a third electrode plate disposed on the insulating substrate, a first semiconductor element disposed on the first electrode plate, a first electrode...

Semiconductor device and method of fabricating the same
09/25/14 - 20140284618 - An aspect of the present embodiment, there is provided a semiconductor device, including a first electrode, a first semiconductor layer having a first conductive type connected to the first electrode, a second semiconductor layer having a second conductive type contacted to the first semiconductor layer, a third semiconductor layer having...

Sic epitaxial wafer and semiconductor device
09/25/14 - 20140284619 - An SiC epitaxial wafer of an embodiment includes, an SiC substrate, and a p-type first SiC epitaxial layer that is formed on the SiC substrate and contains a p-type impurity and an n-type impurity. An element A and an element D being a combination of Al (aluminum), Ga (gallium), or...

Semiconductor device
09/25/14 - 20140284620 - A semiconductor device of an embodiment includes an n-type SiC substrate, an n-type SiC layer formed on the SiC substrate; a p-type first SiC region formed in the surface of the SiC layer and contains a p-type impurity and an n-type impurity, the p-type impurity being an element A, the...

Semiconductor device and method of manufacturing the same
09/25/14 - 20140284621 - A semiconductor device of an embodiment includes an n-type SiC impurity region containing a p-type impurity and an n-type impurity. Where the p-type impurity is an element A and the n-type impurity is an element D, the element A and the element D form a combination of Al (aluminum), Ga...

Semiconductor device and method of manufacturing the same
09/25/14 - 20140284622 - A semiconductor device of an embodiment includes a p-type SiC impurity region containing a p-type impurity and an n-type impurity. Where the p-type impurity is an element A and the n-type impurity is an element D, the element A and the element D form a combination of Al (aluminum), Ga...

Semiconductor device and method of manufacturing the same
09/25/14 - 20140284623 - A semiconductor device of an embodiment includes, an n-type SiC substrate that has first and second faces, and contains a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D being a combination...

Semiconductor component, semiconductor module and methods for producing a semiconductor component and a semiconductor module
09/25/14 - 20140284624 - A semiconductor component includes a semiconductor body having a top side and a bottom side opposite the top side. A top metallization is applied to the top side and a bottom metallization is applied to the bottom side. A moisture barrier completely seals the semiconductor body in cooperation with the...

Manufacturing method of semiconductor device and semiconductor device
09/25/14 - 20140284625 - A manufacturing method of a junction field effect transistor includes the steps of: (a) forming an n+-type source layer on a surface of an n−-type drift layer formed on an n+-type SiC substrate; (b) forming a plurality of shallow trenches disposed at predetermined intervals by etching the surface of the...

Enhanced dislocation stress transistor
09/25/14 - 20140284626 - A device is provided. The device includes a transistor formed on a semiconductor substrate, the transistor having a conduction channel. The device includes at least one edge dislocation formed adjacent to the conduction channel on the semiconductor substrate. The device also includes at least one free surface introduced above the...

Wafer and method of fabricating the same
09/25/14 - 20140284627 - Disclosed is a method of manufacturing a thin film, the method including: growing an epitaxial layer on a surface of a wafer at a growth temperature, wherein the growing of the epitaxial layer comprises controlling a defect present on a surface of the wafer. Also, disclosed is a wafer including:...

Wafer and method of fabricating the same
09/25/14 - 20140284628 - Disclosed is a method of manufacturing a thin film, the method including: growing an epitaxial layer on a surface of a wafer at a growth pressure, wherein the growing of the epitaxial layer comprises controlling a defect present on a surface of the wafer. Also, disclosed is a wafer including:...

Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device
09/18/14 - 20140264374 - A method for manufacturing a silicon carbide substrate for an electrical silicon carbide device includes providing a silicon carbide dispenser wafer including a silicon face and a carbon face and depositing a silicon carbide epitaxial layer on the silicon face. Further, the method includes implanting ions with a predefined energy...

Lattice mismatched heterojunction structures and devices made therefrom
09/18/14 - 20140264375 - Semiconductor heterojunction structures comprising lattice mismatched, single-crystalline semiconductor materials and methods of fabricating the heterojunction structures are provided. The heterojunction structures comprise at least one three-layer junction comprising two layers of single-crystalline semiconductor and a current tunneling layer sandwiched between and separating the two layers of single-crystalline semiconductor material. Also...

Power switching module with reduced oscillation and method for manufacturing a power switching module circuit
09/18/14 - 20140264376 - A power switching module includes a three-terminal power semiconductor device designed for a rated current and a freewheeling unit. The freewheeling unit includes a pn-diode integrated in a first semiconductor material having a first band-gap, and a Schottky-diode integrated in a second semiconductor material having a second band-gap that is...

Sol-gel process for the manufacture of high power switches
09/18/14 - 20140264377 - According to one embodiment, a photoconductive semiconductor switch includes a structure of nanopowder of a high band gap material, where the nanopowder is optically transparent, and where the nanopowder has a physical characteristic of formation from a sol-gel process. According to another embodiment, a method includes mixing a sol-gel precursor...

Semiconductor structure
09/18/14 - 20140264378 - A semiconductor structure has a MOSFET and a substrate to accommodate the MOSFET. The MOSFET has a gate, a source, and a drain in the substrate. A first substrate region surrounding the MOSFET is doped with a stress enhancer, wherein the stress enhancer is configured to generate a tensile stress...

Iii-nitride p-channel field effect transistor with hole carriers in the channel
09/18/14 - 20140264379 - A non-inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a nitrogen-polar III-Nitride first material, a barrier material layer, a two-dimensional hole gas in the barrier layer, and wherein the nitrogen-polar III-Nitride material comprises one or more III-Nitride epitaxial material layers grown in such a manner...

Complementary field effect transistors using gallium polar and nitrogen polar iii-nitride material
09/18/14 - 20140264380 - A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face III-Nitride material, a non-inverted N-channel III-Nitride field effect transistor, epitaxially grown, a first III-Nitride barrier layer, two-dimensional hole gas, second III-Nitride barrier layer, and a two-dimensional...

Semiconductor device with self-aligned ohmic contacts
09/18/14 - 20140264381 - A method of fabricating a semiconductor device includes providing one or more semiconductor layers, providing a gate contact on a first surface of the one or more semiconductor layers, then using the gate contact as a mask to deposit a source contact and a drain contact on the first surface...

Silicon carbide semiconductor devices
09/18/14 - 20140264382 - Methods, systems, and devices are disclosed for thermal processing of silicon carbide semiconductor devices. In one aspect, a method for fabricating a silicon carbide semiconductor device includes forming a thin epitaxial layer of a nitrogen and phosphorous co-doped SiC material on a SiC epitaxial layer formed on a SiC substrate,...

Semiconductor device and manufacturing method of the same
09/18/14 - 20140264383 - A semiconductor device includes a die pad, an SiC chip mounted on the die pad, a porous first sintered Ag layer bonding the die pad and the SiC chip, and a reinforcing resin portion covering a surface of the first sintered Ag layer and formed in a fillet shape. The...

Sic substrate with sic epitaxial film
09/18/14 - 20140264384 - A method of forming an epitaxial SiC film on SiC substrates in a warm wall CVD system, wherein the susceptor is actively heated and the ceiling and sidewall are not actively heated, but are allowed to be indirectly heated by the susceptor. The method includes a first process of reaction...

Manufacture of wafers of wide energy gap semiconductor material for the integration of electronic and/or optical and/or optoelectronic devices
09/18/14 - 20140264385 - A method is provided for fabricating a wafer of semiconductor material intended for use for the integration of electronic and/or optical and/or optoelectronic devices. The method comprises: providing a starting wafer of crystalline silicon (205); on the starting wafer of crystalline silicon, epitaxially growing a buffer layer (210) consisting of...

Performance enhancement in pmos and nmos transistors on the basis of silicon/carbon material
09/18/14 - 20140264386 - A semiconductor device includes a first transistor having first drain and source regions and a first channel region and a second transistor having second drain and source regions and a second channel region. A first silicon/carbon alloy material is embedded in the first drain and source regions, the first silicon/carbon...

Fin field effect transistors having a nitride containing spacer to reduce lateral growth of epitaxially deposited semiconductor materials
09/18/14 - 20140264387 - A fin field effect transistor including a plurality of fin structures on a substrate, and a shared gate structure on a channel portion of the plurality of fin structures. The fin field effect transistor further includes an epitaxial semiconductor material having a first portion between adjacent fin structures in the...