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Diamond Or Silicon Carbide

Diamond Or Silicon Carbide patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

Related Categories:

Active Solid-state Devices (e.g., Transistors, Solid-state Diodes)


Specified Wide Band Gap (1.5ev) Semiconductor Material Other Than Gaasp Or Gaalas > Diamond Or Silicon Carbide



Monolithically integrated vertical power transistor and bypass diode
03/26/15 - 20150084062 - A vertical field-effect transistor (FET) device includes a monolithically integrated bypass diode connected between a source contact and a drain contact of the vertical FET device. According to one embodiment, the vertical FET device includes a pair of junction implants separated by a junction field-effect transistor (JFET) region. At least...

Semiconductor device with a current spreading layer
03/26/15 - 20150084063 - A semiconductor device includes a substrate, a drift layer over the substrate, a spreading layer over the drift layer, and a pair of junction implants in a surface of the spreading layer opposite the drift layer. An anode covers the surface of the spreading layer opposite the drift layer, and...

Semiconductor device and method of manufacturing the same
03/26/15 - 20150084064 - The semiconductor device has a gate electrode GE formed on a substrate via a gate insulating film GI and a source/drain semiconductor layer EP1 formed on the substrate. The upper surface of the semiconductor layer EP1 is positioned higher than the upper surface of the substrate straight below the gate...

Sic single crystal substrate
03/26/15 - 20150084065 - A single crystal SiC substrate capable of forming a good epitaxial thin film thereon to give a high-quality epitaxial substrate is provided. The single crystal SiC substrate has a CMP-treated surface and has 5 or fewer lattice defects measuring 30 nm or more in a direction parallel to the polished...

High voltage mosfet devices and methods of making the devices
03/26/15 - 20150084066 - A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the...

Semiconductor device and method of manufacturing the same
03/26/15 - 20150084067 - The semiconductor device of this embodiment includes: a first region of a first conductivity type SiC; a second region of a first conductivity type SiC, impurity concentration of first conductivity type of the second region being lower than impurity concentration of first conductivity type of the first region; a third...

Semiconductor device and manufacturing method for the same
03/26/15 - 20150084068 - A semiconductor device of an embodiment includes: an SiC layer; a gate insulating film provided on a surface of the SiC layer, the gate insulating film including an oxide film or an oxynitride film in contact with the surface of the SiC layer, the oxide film or the oxynitride film...

Method to induce strain in finfet channels from an adjacent region
03/19/15 - 20150076514 - Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed using two epitaxial layers of different lattice constants that are grown over a bulk substrate. A first thin, strained, epitaxial layer may be cut to form strain-relieved base structures for fins. The base structures...

Schottky barrier diode and method for manufacturing schottky barrier diode
03/19/15 - 20150076515 - A Schottky barrier diode and a method of manufacturing the diode are provided. The diode includes an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and a plurality of p+ regions disposed within the n− type epitaxial layer. An n+ type epitaxial...

Semiconductor device and semiconductor module
03/19/15 - 20150076516 - According to one embodiment, a semiconductor device includes a semiconductor element and a metal film. The semiconductor element has a first surface and a second surface opposite to the first surface. The metal film is provided above the second surface of the semiconductor element. The metal film includes Cr....

Power semiconductor device
03/19/15 - 20150076517 - A power semiconductor device is provided with a semiconductor-element substrate in which a front-surface electrode pattern is formed on a surface of an insulating substrate; semiconductor elements for electric power which are affixed to the surface of the front-surface electrode pattern; a partition wall which is provided on the front-surface...

Semiconductor device and method for manufacturing the same
03/19/15 - 20150076518 - The present invention aims at providing a semiconductor device having a conductive film formed on a semiconducting substrate so that heating of the substrate and contamination by impurities can be suppressed and Schottky resistance can be reduced, and at providing a method of manufacturing the same. The metal film formation...

Vertical high voltage semiconductor apparatus and fabrication method of vertical high voltage semiconductor apparatus
03/19/15 - 20150076519 - A silicon carbide vertical MOSFET includes an N-counter layer of a first conductivity type formed in a surface layer other than a second semiconductor layer base layer selectively formed in a low concentration layer on a surface of the substrate, a gate electrode layer formed through a gate insulating film...

Silicon carbide semiconductor element and fabrication method thereof
03/19/15 - 20150076520 - In a fabrication method of a silicon carbide semiconductor element including a drift layer playing a role of retaining a high withstand voltage on a front side of a semiconductor substrate of silicon carbide and including an ohmic electrode on a backside, dicing is added to form at least one...

Vertical high-voltage semiconductor device and fabrication method thereof
03/19/15 - 20150076521 - To provide a vertical SIC-MOSFET and IGBT capable of having low ON-resistance without destruction of gate oxide films or degradation of reliability even when a high voltage is applied, and a fabrication method thereof, a vertical mosfet has a semiconductor layer and a base layer joined instead of a well...

Semiconductor devices with heterojunction barrier regions and methods of fabricating same
03/19/15 - 20150076522 - An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming...

Semiconductor device
03/19/15 - 20150076523 - According to one embodiment, a semiconductor device includes a first and a second transistor. The first transistor includes a first and a second region of a first conductivity type and a third region of a second conductivity type. The first region is disposed along a first crystal face of a...

Semiconductor device, junction field effect transistor and vertical field effect transistor
03/12/15 - 20150069411 - A semiconductor device according to an embodiment is at least partially arranged in or on a substrate and includes a recess forming a mesa, wherein the mesa extends along a direction into the substrate to a bottom plane of the recess and includes a semiconducting material of a first conductivity...

Schottky barrier diode and method for manufacturing schottky barrier diode
03/12/15 - 20150069412 - A Schottky barrier diode and a method of manufacturing the Schottky barrier diode are provided. The diode includes an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and having an upper surface, a lower surface, and an inclined surface that connects the...

Semiconductor device
03/12/15 - 20150069413 - According one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer of a first conductivity type provided between the first electrode and the second electrode, the first semiconductor layer including silicon carbide; a second semiconductor layer of the first conductivity type provided between the...

Semiconductor device and method for manufacturing the same
03/12/15 - 20150069414 - According to one embodiment, a semiconductor device includes first and second electrodes, and first, second, and third semiconductor regions. The first semiconductor region has a first conductivity type. The first electrode is provided above the first semiconductor region. The second semiconductor region has a second conductivity type and is provided...

Semiconductor device
03/12/15 - 20150069415 - An n-type SiC layer is formed on a front face of an n+-type SiC substrate and plural p-type regions are selectively formed inside the n-type SiC layer. A p-type SiC layer is formed covering the surfaces of the n-type SiC layer and the p-type regions. An n-type region is formed...

Semiconductor device and method for manufacturing the same
03/12/15 - 20150069416 - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The first semiconductor region includes silicon carbide. A conductivity type of the first semiconductor region is a first conductivity type. The second semiconductor region includes silicon carbide. A conductivity...

Monolithic bidirectional silicon carbide switching devices
03/12/15 - 20150069417 - A monolithic bidirectional switching device includes a drift layer having a first conductivity type and having an upper surface, and first and second vertical metal-oxide semiconductor (MOS) structures at the upper surface of the drift layer. The drift layer provides a common drain for the first and second vertical MOS...

Semiconductor component
03/05/15 - 20150060881 - A semiconductor component (1, 20, 30) comprising a semiconductor substrate (3) composed of silicon carbide and comprising separate electrodes (4, 5) applied thereto, said electrodes each comprising at least one monolayer of epitaxial graphene (11) on silicon carbide, in such a way that a current channel is formed between the...

Silicon carbide semiconductor device
03/05/15 - 20150060882 - A silicon carbide semiconductor device includes: a drift layer of the a first conduction type; a guard ring region of a second conduction type formed in annular form in a portion of one surface of the drift layer; a field insulating film formed on the one surface of the drift...

Semiconductor device and method for manufacturing the same
03/05/15 - 20150060883 - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a first electrode, a first insulating section, and a second insulating section. The first semiconductor region includes silicon carbide, is of a first conductivity type and includes first and second...

Semiconductor device
03/05/15 - 20150060884 - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, and a first electrode. The first semiconductor region is of a first conductivity type. The second semiconductor region is provided on the first semiconductor region, and is of a second...

Semiconductor device and method of manufacturing the same
03/05/15 - 20150060885 - A semiconductor device according to an embodiment includes an i-type or a p-type first diamond semiconductor layer, an n-type second diamond semiconductor layer provided on the first diamond semiconductor layer, a mesa structure and an n-type first diamond semiconductor region provided on the side surface. The mesa structure includes the...

Semiconductor substrate
03/05/15 - 20150060886 - A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than the area within 5 mm from the outer circumference. When the central area is divided into square areas of 1 mm×1 mm, in...

Normally-off power jfet and manufacturing method thereof
03/05/15 - 20150060887 - In general, in a semiconductor active element such as a normally-off JFET based on SiC in which an impurity diffusion speed is significantly lower than in silicon, gate regions are formed through ion implantation into the side walls of trenches formed in source regions. However, to ensure the performance of...

Semiconductor device
02/26/15 - 20150053998 - A base layer is used that has an N-type SiC layer formed in a surface layer on the front surface side of an N-type SiC substrate, and a P-type region is formed on a surface of the N-type SiC layer with an N-type source region selectively formed in a surface...

Wide bandgap insulated gate semiconductor device
02/26/15 - 20150053999 - A wide bandgap insulated gate semiconductor device includes a semiconductor substrate made of semiconductor having a bandgap wider than silicon; n− drift layer over the semiconductor substrate; p-channel regions selectively disposed over the drift layer; n+ semiconductor regions selectively disposed in respective surfaces in the channel regions; a plurality of...

Method for treating surface of diamond thin film, method for forming transistor, and sensor device
02/26/15 - 20150054000 - A method for treating a surface of a diamond thin film according to one aspect of the present invention performs one of a first substitution process for substituting part of hydrogen-terminals of a diamond thin film with fluorine-terminals in the absence of a fluorocarbon deposition on the surface of diamond...

Silicon carbide semiconductor device and method for manufacturing the same
02/19/15 - 20150048382 - In a silicon carbide semiconductor device, a p-type SiC layer is disposed in a corner of a bottom of a trench. Thus, even if an electric field is applied between a drain and a gate when a MOSFET is turned off, a depletion layer in a pn junction between the...

Silicon carbide semiconductor element and fabrication method thereof
02/19/15 - 20150048383 - An Ni2Si layer and a TiC layer formed by sintering after deposition of a thin layer including Ni and a thin layer including Ti on a silicon carbide substrate have a structure in which the TiC layer is precipitated on a surface of the Ni2Si layer. A multilayer thin film...

Semiconductor device
02/19/15 - 20150048384 - In a JBS diode using a wide band gap semiconductor, the wide band gap semiconductor has a large built-in voltage, which sometimes causes difficulties for the pn diode portion to turn on, resulting in a problem that resistance to surge currents is not sufficiently ensured. In order to solve this...

Transistor with bonded gate dielectric
02/12/15 - 20150041824 - A method for forming a semiconductor device includes forming a dielectric layer on a first substrate and wafer bonding the dielectric layer of the first substrate to a second substrate including SiC with a passivating layer formed on the SiC. A portion of the first substrate is removed from a...

Semiconductor device, high electron mobility transistor (hemt) and method of manufacturing
02/12/15 - 20150041825 - A semiconductor device includes a substrate, a channel layer over the substrate, an active layer over the channel layer, and a barrier structure between the substrate and the channel layer. The active layer is configured to cause a two dimensional electron gas (2DEG) to be formed in the channel layer...

Transistor with bonded gate dielectric
02/12/15 - 20150041826 - A method for forming a semiconductor device includes forming a dielectric layer on a first substrate and wafer bonding the dielectric layer of the first substrate to a second substrate including SiC with a passivating layer formed on the SiC. A portion of the first substrate is removed from a...

Bonding structure including metal nano particles and bonding method using metal nano particles
02/12/15 - 20150041827 - A bonding structure including metal nano particles includes a first member having a metal surface on at least one side, a second member having a metal surface on at least one side, the second member being disposed such that the metal surface of the second member faces the metal surface...

Semiconductor device, and method for manufacturing semiconductor device
02/12/15 - 20150041828 - [ Solution Means] A semiconductor device 1 includes an n-type SiC layer 2 having a first surface 2A, a second surface 2B, and end faces 2C, a p-type voltage relaxing layer 7 formed in the SiC layer 2 so as to be exposed to the end portion of the first...

Electronic circuit device
02/12/15 - 20150041829 - A normally-off type silicon carbide junction FET has a problem that the gate thereof is not easy to use due to inferiority in the characteristics of it. This problem occurs because in order to achieve normally-off, the gate voltage should be off at 0V and at the same time, the...

Schottky diode
02/12/15 - 20150041830 - A semiconductor system of a Schottky diode is described having an integrated PN diode as a clamping element, which is suitable in particular as a Zener diode having a breakdown voltage of approximately 20 V for use in motor vehicle generator systems. The semiconductor system of the Schottky diode includes...

Production of an integrated circuit including electrical contact on sic
02/12/15 - 20150041831 - Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on...

Method and system for a semiconductor device with integrated transient voltage suppression
02/05/15 - 20150034969 - A power transistor assembly and method of operating the assembly are provided. The power transistor assembly includes integrated transient voltage suppression on a single semiconductor substrate and includes a transistor formed of a wide band gap material, the transistor including a gate terminal, a source terminal, and a drain terminal,...

Semiconductor device and method for producing same
02/05/15 - 20150034970 - A semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode being in contact with a surface of the semiconductor layer. The semiconductor layer includes a drift layer that forms the surface of the semiconductor layer and a high-resistance layer...

Semiconductor device and method for manufacturing same
02/05/15 - 20150034971 - [ Solution Means] A semiconductor device 1 has an MIS structure including an SiC epitaxial layer 3, a gate insulating film 9 and a gate electrode 10 formed on the gate insulating film 9. A gate insulating film 9 includes a silicon oxide film in contact with the SiC epitaxial...

Semiconductor device
02/05/15 - 20150034972 - A semiconductor device according to an embodiment includes, a first conductivity type semiconductor substrate including one of Si and SiC; a second conductivity type semiconductor region at a surface of the semiconductor substrate, a GaN-based semiconductor layer on the semiconductor substrate, and a lateral semiconductor element at the GaN-based semiconductor...

Semiconductor device and method of manufacturing the same
02/05/15 - 20150034973 - A semiconductor device of an embodiment includes: an n-type first SiC epitaxial layer; a p-type second SiC epitaxial layer provided on the first SiC epitaxial layer and contains a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the...

Semiconductor device
02/05/15 - 20150034974 - A semiconductor device of an embodiment includes: an n-type first SiC epitaxial layer; a p-type second SiC epitaxial layer on the first SiC epitaxial layer containing a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A...

Forming embedded source and drain regions to prevent bottom leakage in a dielectrically isolated fin field effect transistor (finfet) device
01/29/15 - 20150028348 - Approaches for isolating source and drain regions in an integrated circuit (IC) device (e.g., a fin field effect transistor (finFET)) are provided. Specifically, the FinFET device comprises a gate structure formed over a finned substrate; an isolation oxide beneath an active fin channel of the gate structure; an embedded source...

Method to induce strain in 3-d microfabricated structures
01/29/15 - 20150028349 - Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic...

Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling
01/29/15 - 20150028350 - Methods of forming a semiconductor structure include the use of channeled implants into silicon carbide crystals. Some methods include providing a silicon carbide layer having a crystallographic axis, heating the silicon carbide layer to a temperature of about 300° C. or more, implanting dopant ions into the heated silicon carbide...

Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions
01/29/15 - 20150028351 - A semiconductor device structure according to some embodiments includes a silicon carbide substrate having a first conductivity type, a silicon carbide drift layer having the first conductivity type on the silicon carbide substrate and having an upper surface opposite the silicon carbide substrate, and a buried junction structure in the...

Semiconductor device
01/29/15 - 20150028352 - [Solution Means] A semiconductor device 1 includes a substrate 7 made of an n+ type SiC and having a predetermined off-angle, a drift layer 8 made of an n− type SiC and formed on the substrate 7, a plurality of unit cells 10 demarcated in the drift layer 8 by...

Schottky barrier detection devices having a 4h-sic n-type epitaxial layer
01/29/15 - 20150028353 - A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12°; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a...

Silicon carbide devices having smooth channels
01/29/15 - 20150028354 - Methods of forming silicon carbide power devices are provided. An n− silicon carbide layer is provided on a silicon carbide substrate. A p-type silicon carbide well region is provided on the n− silicon carbide layer. A buried region of p+ silicon carbide is provided on the p-type silicon carbide well...

Method of forming a semiconductor device
01/29/15 - 20150028355 - A semiconductor device having dislocations and a method of fabricating the semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate having an isolation feature therein and two gate stacks overlying the substrate, wherein one of...

Enhanced gate dielectric for a field effect device with a trenched gate
01/22/15 - 20150021623 - The present disclosure relates to a silicon carbide (SiC) field effect device that has a gate assembly formed in a trench. The gate assembly includes a gate dielectric that is an dielectric layer, which is deposited along the inside surface of the trench and a gate dielectric formed over the...

Lift-off of epitaxial layers from silicon carbide or compound semiconductor substrates
01/22/15 - 20150021624 - A method to remove epitaxial semiconductor layers from a substrate by growing an epitaxial sacrificial layer on the substrate where the sacrificial layer is a transition metal nitride (TMN) or a TMN ternary compound, growing one or more epitaxial device layers on the sacrificial layer, and separating the device layers...

Semiconductor fin isolation by a well trapping fin portion
01/22/15 - 20150021625 - A bulk semiconductor substrate including a first semiconductor material is provided. A well trapping layer including a second semiconductor material and a dopant is formed on a top surface of the bulk semiconductor substrate. The combination of the second semiconductor material and the dopant within the well trapping layer is...

Bipolar transistor and a method for manufacturing a bipolar transistor
01/15/15 - 20150014704 - A bipolar transistor includes a semiconductor structure including an emitter area, a base area and a collector area. The emitter area is electrically connected to an emitter contact of the bipolar transistor. Further, the emitter area has a first conductivity type. The base area is electrically connected to a base...

Semiconductor device
01/15/15 - 20150014705 - An optical fiber is provided between a photodiode and a semiconductor active portion of a wide gap semiconductor element forming portion such that emitted light at the time of light emission of the semiconductor active portion of the wide gap semiconductor element forming portion is incident from an incident surface...

Vertical hetero wide bandgap transistor
01/15/15 - 20150014706 - A vertical hetero transistor provides a wide bandgap, increases the breakdown voltage or reduces the on resistance of the switching transistor or both....

Method for producing a mos stack on a diamond substrate
01/15/15 - 20150014707 - The invention relates to a method for producing a component comprising a conductive grid insulated from a semiconductor monocrystalline diamond substrate by an insulating region, comprising the following steps: a) oxygenating the surface of the substrate so as to replace the hydrogen surface terminations of the substrate with oxygen surface...

Semiconductor devices and methods of manufacture
01/08/15 - 20150008446 - A method of manufacturing a semiconductor device is presented. The method includes providing a semiconductor layer comprising silicon carbide, wherein the semiconductor layer comprises a first region doped with a first dopant type. The method further includes implanting the semiconductor layer with a second dopant type using a single implantation...

Silicon carbide device and a method for manufacturing a silicon carbide device
01/08/15 - 20150008447 - A silicon carbide device includes an epitaxial silicon carbide layer having a first conductivity type and a buried lateral silicon carbide edge termination region within the epitaxial silicon carbide layer and having a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide...

Metal-oxide-semiconductor (mos) devices with increased channel periphery and methods of manufacture
01/08/15 - 20150008448 - A semiconductor device includes a drift layer disposed on a substrate. The drift layer has a non-planar surface having a plurality of repeating features oriented parallel to a length of a channel of the semiconductor device. Further, each the repeating features have a dopant concentration higher than a remainder of...

Metal-oxide-semiconductor (mos) devices with increased channel periphery and methods of manufacture
01/08/15 - 20150008449 - A semiconductor device includes a silicon carbide (SiC) drift layer disposed on a (0001) oriented SiC substrate. The SiC drift layer has a non-planar surface including a plurality of repeating features that are oriented parallel to a length of a channel of the semiconductor device. Further, the channel region is...

Wide band gap semiconductor device
01/08/15 - 20150008450 - The present invention includes a second source layer formed on a surface layer of a p base layer in the same step as that of forming a n+ source layer to sandwich a field insulating film, a second gate electrode being the same layer as a gate polysilicon and formed...

Formation of self-aligned source for split-gate non-volatile memory cell
01/08/15 - 20150008451 - A memory device having a pair of conductive floating gates with inner sidewalls facing each other, and disposed over and insulated from a substrate of first conductivity type. A pair of spaced apart conductive control gates each disposed over and insulated from one of the floating gates, and each including...

Semiconductor device and method of fabricating the same
01/08/15 - 20150008452 - A semiconductor device comprises a substrate and first and second stress-generating epitaxial regions on the substrate and spaced apart from each other. A channel region is on the substrate and positioned between the first and second stress-generating epitaxial regions. A gate electrode is on the channel region. The channel region...

Substrate, semiconductor device, and method of manufacturing the same
01/08/15 - 20150008453 - A substrate capable of achieving a lowered probability of defects produced in a step of forming an epitaxial film or a semiconductor element, a semiconductor device including the substrate, and a method of manufacturing a semiconductor device are provided. A substrate is a substrate having a front surface and a...

Substrate, semiconductor device, and method of manufacturing the same
01/08/15 - 20150008454 - A substrate capable of achieving a lowered probability of defects produced in a step of forming an epitaxial film or a semiconductor element, a semiconductor device including the substrate, and a method of manufacturing a semiconductor device are provided. A substrate is a substrate having a front surface and a...