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Diamond Or Silicon Carbide

Diamond Or Silicon Carbide patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

Related Categories:

Active Solid-state Devices (e.g., Transistors, Solid-state Diodes)


Specified Wide Band Gap (1.5ev) Semiconductor Material Other Than Gaasp Or Gaalas > Diamond Or Silicon Carbide



Tapered gate electrode for semiconductor devices
05/28/15 - 20150144960 - The subject matter disclosed herein relates to metal-oxide-semiconductor (MOS) devices, such as silicon carbide (SiC) power devices (e.g., MOSFETs, IGBTs, etc.) In an embodiment, a semiconductor device includes a gate oxide layer disposed on top of a semiconductor layer. The semiconductor device also includes a gate electrode having a tapered...

High frequency device and method of manufacturing the same
05/28/15 - 20150144961 - A high frequency device includes: a capping layer formed on an epitaxial structure; source and drain electrodes formed on the capping layer; a multilayer insulating pattern formed on entire surfaces of the source and drain electrodes and the capping layer in a step shape; a T-shaped gate passing through the...

Complementarily strained finfet structure
05/28/15 - 20150144962 - A complementary fin field-effect transistor (FinFET) includes a p-type device having a p-channel fin. The p-channel fin may include a first material that is lattice mismatched relative to a semiconductor substrate. The first material may have a compressive strain. The FinFET device also includes an n-type device having an re-channel...

Silicon carbide epi-wafer and method of fabricating the same
05/28/15 - 20150144963 - A method of fabricating an epi-wafer includes providing a wafer in a susceptor, and growing an epi-layer on the wafer. The growing of the epi-layer on the wafer includes a first process of supplying a first input quantity of a raw material to the susceptor, and a second process of...

Silicon carbide epi-wafer and method of fabricating the same
05/28/15 - 20150144964 - A method of fabricating an epi-wafer includes providing a wafer in a susceptor, performing a surface treatment on the wafer by heating the susceptor and supplying a surface treatment gas, and growing an epi-layer on the wafer. An epi-wafer includes a wafer, and an epi-layer formed on the wafer. Surface...

Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device
05/28/15 - 20150144965 - A p-type region, a p− type region, and a p+ type region are selectively disposed in a surface layer of a silicon carbide substrate base. The p-type region and the p− type region are disposed in a breakdown voltage structure portion that surrounds an active region. The p+ type region...

Schottky diode with reduced forward voltage
05/28/15 - 20150144966 - A semiconductor component includes a semiconductor body of a first conduction type and a metal layer on the semiconductor body, wherein the metal layer forms with the semiconductor body a Schottky contact along a contact surface. A doping concentration of the first conduction type on the contact surface varies along...

Semiconductor device
05/28/15 - 20150144967 - A semiconductor device includes a semiconductor layer made of first conductivity type SiC; a second conductivity type well region formed on the semiconductor layer and having a channel region; a first conductivity type source region formed on the well region and including a first region adjacent to the well region...

Junction field effect transistor cell with lateral channel region
05/21/15 - 20150137142 - A semiconductor device includes a junction field effect transistor cell with a top gate region, a lateral channel region and a buried gate region. The lateral channel region is arranged between the top gate region and the buried gate region along a vertical direction with respect to a first surface...

Junction field effect transistor cell with lateral channel region
05/21/15 - 20150137143 - A junction field effect transistor cell of a semiconductor device includes a top gate region, a lateral channel region and a buried gate region arranged along a vertical direction. The lateral channel region includes first zones of a first conductivity type and second zones of a second conductivity type which...

Predetermined kerf regions and methods of fabrication thereof
05/21/15 - 20150137144 - In one embodiment, the semiconductor die includes a selective epitaxial layer including device regions, and a masking structure disposed around sidewalls of the epitaxial layer. The masking structure is part of an exposed surface of the semiconductor die....

Semiconductor device and semiconductor device manufacturing method
05/21/15 - 20150137145 - The invention provides an ultra-low-on-resistance, excellent-reliability semiconductor device that can finely be processed using SiC and a semiconductor device producing method. A semiconductor device includes: a silicon carbide substrate; a first-conductive-type first silicon carbide layer provided on a first principal surface of the silicon carbide substrate; a second-conductive-type first silicon...

Transistor device
05/21/15 - 20150137146 - Various embodiments provide transistor devices and fabrication methods. An exemplary transistor device with improved carrier mobility can be formed by first forming a confining layer on a semiconductor substrate to confine impurity ions diffused from the semiconductor substrate to the confining layer. An epitaxial silicon layer can be formed on...

Cmos with dual raised source and drain for nmos and pmos
05/21/15 - 20150137147 - An apparatus and a method for creating a CMOS with a dual raised source and drain for NMOS and PMOS. The spacers on both stack gates are of equal thickness. In this method, a first insulating layer is formed on the surface. The first region is then masked while the...

Multi-layer semiconductor device structures with different channel materials
05/14/15 - 20150129891 - Systems and methods are provided for fabricating a semiconductor device structure. An example semiconductor device structure includes a first device layer and a second device layer formed on a first device layer. The first device layer is formed on a substrate and includes a first channel structure configured to conduct...

Wafer-level chip scale package
05/14/15 - 20150129892 - A wafer-level chip scale package is disclosed, including a chip including a substrate and a GaN transistor disposed on the substrate. The GaN transistor includes a first electrode, a dielectric layer disposed on the chip, and a redistribution trace disposed on the first dielectric layer and electrically connected with the...

Semiconductor device
05/14/15 - 20150129893 - y≦9×10−7x2−0.0004x+0.7001  (1)....

Wide band gap semiconductor apparatus and fabrication method thereof
05/14/15 - 20150129894 - A silicon carbide epitaxial layer formed by a low concentration wide band gap semiconductor of a first conductivity type is formed on the surface of a silicon carbide substrate formed by a high concentration wide band gap semiconductor of the first conductivity type. A Schottky electrode is formed on the...

Silicon carbide semiconductor device and method for producing the same
05/14/15 - 20150129895 - In a method for producing an SiC semiconductor device, a p type layer is formed in a trench by epitaxially growing, and is then left only on a bottom portion and ends of the trench by hydrogen etching, thereby to form a p type SiC layer. Thus, the p type...

Semiconductor device and method for manufacturing same
05/14/15 - 20150129896 - A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky...

Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of sic epitaxial films
05/14/15 - 20150129897 - Non-destructive pretreatment methods are generally provided for a surface of a SiC substrate with substantially no degradation of surface morphology thereon. In one particular embodiment, a molten mixture (e.g., including KOH and a buffering agent) is applied directly onto the surface of the SiC substrate to form a treated surface...

Semiconductor device and method for producing the same
05/07/15 - 20150123145 - A semiconductor device includes a semiconductor body with a front face and a back face, having an active zone located at the front face, a front surface metallization layer having a front face and a back face directed towards the active zone, the front surface metallization layer being provided on...

Increased space between epitaxy on adjacent fins of finfet
05/07/15 - 20150123146 - A semiconductor structure includes a bulk silicon substrate and one or more silicon fins coupled to the bulk silicon substrate. Stress-inducing material(s), such as silicon, are epitaxially grown on the fins into naturally diamond-shaped structures using a controlled selective epitaxial growth. The diamond shaped structures are subjected to annealing at...

Semiconductor devices and fabrication method thereof
05/07/15 - 20150123147 - A method is provided for fabricating a semiconductor device. The method includes providing a semiconductor substrate; and forming a first gate structure on the semiconductor substrate. The method also includes forming offset spacers doped with a certain type of ions to increase an anti-corrosion ability of the offset spacers on...

Semiconductor device and method for producing semiconductor device
05/07/15 - 20150123148 - [Solution] This semiconductor device (1) comprises: an SiC epitaxial layer (3) that has an uneven shape formed, on the basis of a height difference (H1), on the outermost surface where a semiconductor element (MOSFET) is arranged; and a source electrode (13) made of a metal material and formed on the...

Semiconductor device and method for producing the same
05/07/15 - 20150123149 - A semiconductor device comprises a semiconductor body with a front face and a back face, having an active zone located at the front face, a front surface metallization layer having a front face and a back face directed towards the active zone, the front surface metallization layer being provided on...

Semiconductor device
04/30/15 - 20150115282 - A semiconductor device includes an insulating substrate, a semiconductor element secured to a top surface of the insulating substrate, a case formed of a resin and having a frame portion surrounding the semiconductor element, a metal support located above the insulating substrate and having an end secured to the frame...

Sic bipolar junction transistor with reduced carrier lifetime in collector and a defect termination layer
04/30/15 - 20150115283 - A method of manufacturing a silicon carbide (SiC) bipolar junction transistor (BJT) and a SiC BJT (100) are provided. The SiC BJT comprises an emitter region (150), a base region (140) and a collector region (120). The collector region is arranged on a substrate (110) having an off-axis orientation of...

Semiconductor device with junction termination extension
04/30/15 - 20150115284 - A semiconductor device includes a substrate including silicon carbide; a drift layer disposed over the substrate including a drift region doped with a first dopant and conductivity type; and a second region, doped with a second dopant and conductivity type, adjacent to the drift region and proximal to a surface...

Semiconductor device and fabrication method of semiconductor device
04/30/15 - 20150115285 - P+ type regions and a p-type region are selectively disposed in a surface layer of a silicon carbide substrate base. The P+ type region is disposed in a breakdown voltage structure portion surrounding an active region. The P+ type region is disposed in the active region to make up a...

Silicon carbide semiconductor device and method for producing the same
04/30/15 - 20150115286 - An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high...

Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device
04/30/15 - 20150115287 - A P+ type region, a p-type region, and a P− type region are disposed in a surface layer of a silicon carbide substrate base and are disposed in a breakdown voltage structure portion surrounding an active region to make up an element structure of Schottky junction. The p− type region...

Power semiconductor module
04/30/15 - 20150115288 - A power semiconductor module includes a base plate as a metallic heat dissipating body, a first insulating layer on the base plate, and a first wiring pattern on the first insulating layer. On a predetermined region that is a part of the first wiring pattern, a second wiring pattern for...

Hybrid wide-bandgap semiconductor bipolar switches
04/30/15 - 20150115289 - A hybrid semiconductor bipolar switch in which a normally-on high-voltage wide-bandgap semiconductor bipolar switch and a normally-off field effect transistor are connected in a cascode (Baliga-pair) configuration. The switch may be constructed as a stacked hybrid device where a discrete transistor is bonded on top of a bipolar switch. Power...

Semiconductor devices with graphene nanoribbons
04/23/15 - 20150108499 - Semiconductor devices with graphene nanoribbons and methods of manufacture are disclosed. The method includes forming at least one layer of Si material on a substrate. The method further includes forming at least one layer of carbon based material adjacent to the at least one layer of Si. The method further...

Semiconductor device and method of manufacturing the same
04/23/15 - 20150108500 - A semiconductor device comprises a semiconductor body of a first semiconductor material, wherein at least a part of the semiconductor body constitutes a drift zone of a first conductivity type. The semiconductor device further comprises a channel layer structure comprising a semiconductor heterojunction between first and second semiconductor layers electrically...

Semiconductor device
04/23/15 - 20150108501 - In an active region, p+ regions are selectively disposed in a surface layer of an n− drift layer on an n+ semiconductor substrate. A p-base layer is disposed on surfaces of the n− drift layer and the P+ regions, and an MOS structure is disposed on the p-base layer. In...

Heat dissipation substrate and method for producing same
04/23/15 - 20150108502 - The present invention relates to a heat dissipation substrate, which is a composite substrate composed of two layers, and which is characterized in that a surface layer (first layer) (1) is configured of single crystal silicon and a handle substrate (second layer) (2) is configured of a material that has...

Semiconductor device and method for manufacturing same
04/23/15 - 20150108503 - A semiconductor device of the present disclosure includes a semiconductor layer provided on a main surface of a substrate. A cell region is provided with a gate insulating film disposed on the semiconductor layer and a gate electrode disposed on the gate insulating film, and a wiring region is provided...

Method for producing 3c-sic epitaxial layer, 3c-sic epitaxial substrate, and semiconductor device
04/23/15 - 20150108504 - A 3C-SiC epitaxial layer is produced by a production method including: epitaxially growing a first 3C-SiC layer on a Si substrate; oxidizing the first 3C-SiC layer; removing an oxide film on a surface of the 3C-SiC layer; and epitaxially growing a second 3C-SiC layer on the 3C-SiC layer after the...

Diamond semiconductor system and method
04/23/15 - 20150108505 - Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The system may include a diamond material having n-type donor atoms and a diamond lattice, wherein 0.16% of the donor atoms contribute conduction electrons with mobility greater than 770 cm2/Vs to the diamond lattice at 100...

Semiconductor devices in sic using vias through n-type substrate for backside contact to p-type layer
04/16/15 - 20150102361 - A Silicon Carbide (SiC) semiconductor device having back-side contacts to a P-type region and methods of fabrication thereof are disclosed. In one embodiment, an SiC semiconductor device includes an N-type substrate and an epitaxial structure on a front-side of the N-type substrate. The epitaxial substrate includes a P-type layer adjacent...

Silicon carbide power device equipped with termination structure
04/16/15 - 20150102362 - A silicon carbide power device equipped with termination structure comprises a silicon carbide substrate, a power element structure and a termination structure. The silicon carbide substrate contains a drift layer which has a first conductivity and includes an active zone and a termination zone. The power element structure is located...

Silicon carbide semiconductor device and fabrication method thereof
04/16/15 - 20150102363 - A silicon carbide semiconductor device has a first-conductivity-type semiconductor layer having a lower impurity concentration and formed on a first-conductivity-type semiconductor substrate, a second-conductivity-type semiconductor layer having a higher impurity concentration and selectively formed in the first-conductivity-type semiconductor layer, a second-conductivity-type base layer having a lower impurity concentration formed on...

Semiconductor device with low-conducting buried and/or surface layers
04/16/15 - 20150102364 - A device including one or more low-conducting layers is provided. A low-conducting layer can be located below the channel and one or more attributes of the low-conducting layer can be configured based on a minimum target operating frequency of the device and a charge-discharge time of a trapped charge targeted...

Finfet with sigma cavity with multiple epitaxial material regions
04/09/15 - 20150097197 - Embodiments of the present invention provide an improved finFET and methods of fabrication. A sigma cavity is used with an n-type finFET to allow multiple epitaxial layers to be disposed adjacent to a finFET gate. In some embodiments, stacking faults may be formed in the epitaxial layers using a stress...

White led chip and white led packaging device
04/02/15 - 20150091019 - A white LED chip includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is disposed over the P-type layer. The tunneling structure includes a first barrier layer, an active layer and a second barrier layer. The first barrier layer...

Semiconductor device and method of manufacturing the same
04/02/15 - 20150091020 - A semiconductor device includes: a gate oxide film formed on a surface of a semiconductor substrate; a gate electrode formed on the gate oxide film; and a high concentration impurity layer connected to a main electrode and formed on the surface of the semiconductor substrate, wherein an impurity species doped...

Method of manufacturing semiconductor device and the semiconductor device
04/02/15 - 20150091021 - A method of manufacturing a semiconductor device includes: forming a gate electrode material layer made of a material configuring a gate electrode and a barrier material layer made of a silicon nitride film; forming an upper barrier layer configured to an upper surface of the gate electrode with the barrier...

Semiconductor device and method of manufacturing the same
04/02/15 - 20150091022 - A semiconductor device having a main electrode connected to a first semiconductor region and a second semiconductor layer on a semiconductor substrate so that a pn-junction diode is formed with the first semiconductor region being interposed and a Schottky barrier diode is formed with the second semiconductor layer being interposed...

Semiconductor device and method of manufacturing
04/02/15 - 20150091023 - A diode comprising a reduced surface field effect trench structure, the reduced surface field effect trench structure comprising at least two trenches formed in a substrate and separated from one another by a joining region of the substrate, the joining region comprising an electrical contact and a layer of p-doped...

Monolithically integrated vertical power transistor and bypass diode
03/26/15 - 20150084062 - A vertical field-effect transistor (FET) device includes a monolithically integrated bypass diode connected between a source contact and a drain contact of the vertical FET device. According to one embodiment, the vertical FET device includes a pair of junction implants separated by a junction field-effect transistor (JFET) region. At least...

Semiconductor device with a current spreading layer
03/26/15 - 20150084063 - A semiconductor device includes a substrate, a drift layer over the substrate, a spreading layer over the drift layer, and a pair of junction implants in a surface of the spreading layer opposite the drift layer. An anode covers the surface of the spreading layer opposite the drift layer, and...

Semiconductor device and method of manufacturing the same
03/26/15 - 20150084064 - The semiconductor device has a gate electrode GE formed on a substrate via a gate insulating film GI and a source/drain semiconductor layer EP1 formed on the substrate. The upper surface of the semiconductor layer EP1 is positioned higher than the upper surface of the substrate straight below the gate...

Sic single crystal substrate
03/26/15 - 20150084065 - A single crystal SiC substrate capable of forming a good epitaxial thin film thereon to give a high-quality epitaxial substrate is provided. The single crystal SiC substrate has a CMP-treated surface and has 5 or fewer lattice defects measuring 30 nm or more in a direction parallel to the polished...

High voltage mosfet devices and methods of making the devices
03/26/15 - 20150084066 - A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the...

Semiconductor device and method of manufacturing the same
03/26/15 - 20150084067 - The semiconductor device of this embodiment includes: a first region of a first conductivity type SiC; a second region of a first conductivity type SiC, impurity concentration of first conductivity type of the second region being lower than impurity concentration of first conductivity type of the first region; a third...

Semiconductor device and manufacturing method for the same
03/26/15 - 20150084068 - A semiconductor device of an embodiment includes: an SiC layer; a gate insulating film provided on a surface of the SiC layer, the gate insulating film including an oxide film or an oxynitride film in contact with the surface of the SiC layer, the oxide film or the oxynitride film...

Method to induce strain in finfet channels from an adjacent region
03/19/15 - 20150076514 - Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed using two epitaxial layers of different lattice constants that are grown over a bulk substrate. A first thin, strained, epitaxial layer may be cut to form strain-relieved base structures for fins. The base structures...

Schottky barrier diode and method for manufacturing schottky barrier diode
03/19/15 - 20150076515 - A Schottky barrier diode and a method of manufacturing the diode are provided. The diode includes an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and a plurality of p+ regions disposed within the n− type epitaxial layer. An n+ type epitaxial...

Semiconductor device and semiconductor module
03/19/15 - 20150076516 - According to one embodiment, a semiconductor device includes a semiconductor element and a metal film. The semiconductor element has a first surface and a second surface opposite to the first surface. The metal film is provided above the second surface of the semiconductor element. The metal film includes Cr....

Power semiconductor device
03/19/15 - 20150076517 - A power semiconductor device is provided with a semiconductor-element substrate in which a front-surface electrode pattern is formed on a surface of an insulating substrate; semiconductor elements for electric power which are affixed to the surface of the front-surface electrode pattern; a partition wall which is provided on the front-surface...

Semiconductor device and method for manufacturing the same
03/19/15 - 20150076518 - The present invention aims at providing a semiconductor device having a conductive film formed on a semiconducting substrate so that heating of the substrate and contamination by impurities can be suppressed and Schottky resistance can be reduced, and at providing a method of manufacturing the same. The metal film formation...

Vertical high voltage semiconductor apparatus and fabrication method of vertical high voltage semiconductor apparatus
03/19/15 - 20150076519 - A silicon carbide vertical MOSFET includes an N-counter layer of a first conductivity type formed in a surface layer other than a second semiconductor layer base layer selectively formed in a low concentration layer on a surface of the substrate, a gate electrode layer formed through a gate insulating film...

Silicon carbide semiconductor element and fabrication method thereof
03/19/15 - 20150076520 - In a fabrication method of a silicon carbide semiconductor element including a drift layer playing a role of retaining a high withstand voltage on a front side of a semiconductor substrate of silicon carbide and including an ohmic electrode on a backside, dicing is added to form at least one...

Vertical high-voltage semiconductor device and fabrication method thereof
03/19/15 - 20150076521 - To provide a vertical SIC-MOSFET and IGBT capable of having low ON-resistance without destruction of gate oxide films or degradation of reliability even when a high voltage is applied, and a fabrication method thereof, a vertical mosfet has a semiconductor layer and a base layer joined instead of a well...

Semiconductor devices with heterojunction barrier regions and methods of fabricating same
03/19/15 - 20150076522 - An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming...

Semiconductor device
03/19/15 - 20150076523 - According to one embodiment, a semiconductor device includes a first and a second transistor. The first transistor includes a first and a second region of a first conductivity type and a third region of a second conductivity type. The first region is disposed along a first crystal face of a...

Semiconductor device, junction field effect transistor and vertical field effect transistor
03/12/15 - 20150069411 - A semiconductor device according to an embodiment is at least partially arranged in or on a substrate and includes a recess forming a mesa, wherein the mesa extends along a direction into the substrate to a bottom plane of the recess and includes a semiconducting material of a first conductivity...

Schottky barrier diode and method for manufacturing schottky barrier diode
03/12/15 - 20150069412 - A Schottky barrier diode and a method of manufacturing the Schottky barrier diode are provided. The diode includes an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and having an upper surface, a lower surface, and an inclined surface that connects the...

Semiconductor device
03/12/15 - 20150069413 - According one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer of a first conductivity type provided between the first electrode and the second electrode, the first semiconductor layer including silicon carbide; a second semiconductor layer of the first conductivity type provided between the...

Semiconductor device and method for manufacturing the same
03/12/15 - 20150069414 - According to one embodiment, a semiconductor device includes first and second electrodes, and first, second, and third semiconductor regions. The first semiconductor region has a first conductivity type. The first electrode is provided above the first semiconductor region. The second semiconductor region has a second conductivity type and is provided...

Semiconductor device
03/12/15 - 20150069415 - An n-type SiC layer is formed on a front face of an n+-type SiC substrate and plural p-type regions are selectively formed inside the n-type SiC layer. A p-type SiC layer is formed covering the surfaces of the n-type SiC layer and the p-type regions. An n-type region is formed...

Semiconductor device and method for manufacturing the same
03/12/15 - 20150069416 - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The first semiconductor region includes silicon carbide. A conductivity type of the first semiconductor region is a first conductivity type. The second semiconductor region includes silicon carbide. A conductivity...

Monolithic bidirectional silicon carbide switching devices
03/12/15 - 20150069417 - A monolithic bidirectional switching device includes a drift layer having a first conductivity type and having an upper surface, and first and second vertical metal-oxide semiconductor (MOS) structures at the upper surface of the drift layer. The drift layer provides a common drain for the first and second vertical MOS...