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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Specified Wide Band Gap (1.5ev) Semiconductor Material Other Than Gaasp Or Gaalas > Diamond Or Silicon Carbide

Diamond Or Silicon Carbide

Diamond Or Silicon Carbide patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

07/31/14 - 20140209926 - Semiconductor integrated circuit
A compound semiconductor integrated circuit chip has a front and/or back surface metal layer used for electrical connection to an external circuit. The compound semiconductor integrated circuit chip (first chip) comprises a substrate, an electronic device layer, and a dielectric layer. A first metal layer is formed on the front...

07/31/14 - 20140209927 - Semiconductor device and method for manufacturing same and semiconductor substrate
According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type made of silicon carbide; and a second semiconductor layer of a second conductivity type made of silicon carbide, placed in junction with the first semiconductor layer, and containing an electrically inactive element....

07/24/14 - 20140203297 - Method of manufacturing substrates having improved carrier lifetimes
This invention relates to a method for depositing silicon carbide material onto a substrate such that the resulting substrate has a carrier lifetime of 0.5-1000 microseconds, the method comprising a. introducing a gas mixture comprising a chlorosilane gas, a carbon-containing gas, and hydrogen gas into a reaction chamber containing a...

07/24/14 - 20140203298 - Strained silicon carbide channel for electron mobility of nmos
A semiconductor is formed on a (110) silicon (Si) substrate, with improved electron mobility. Embodiments include semiconductor devices having a silicon carbide (SiC) portion in the nFET channel region. An embodiment includes forming an nFET channel region and a pFET channel region in a Si substrate, such as a (110)...

07/24/14 - 20140203299 - Semiconductor device
The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a...

07/24/14 - 20140203300 - Sic semiconductor element and manufacturing method thereof
Provided are a technology that simply forms a particular crystal surface such as a {03-38} surface having high carrier mobility in trench sidewalls and a SiC semiconductor element where most of the trench sidewalls appropriate for a channel member are formed from {03-38} surfaces. A trench structure formed in a...

07/17/14 - 20140197422 - Silicon carbide semiconductor device
A silicon carbide semiconductor device includes a silicon carbide substrate. The silicon carbide substrate is composed of an element region provided with a semiconductor element portion and a termination region surrounding the element region as viewed in a plan view. The semiconductor element portion includes a drift region having a...

07/10/14 - 20140191247 - Semiconductor device
According to one embodiment, a semiconductor device includes a gate electrode, a first semiconductor region, a second semiconductor region of a first conductivity type, a third semiconductor region of a second conductivity type and a fourth semiconductor region of the first conductivity type. The first semiconductor region includes a silicon...

07/10/14 - 20140191248 - Semiconductor device
A semiconductor device includes: a semiconductor substrate that has an element region and a peripheral region that surrounds the element region; and a gate pad that is disposed in an area that is on a surface side of the semiconductor substrate. The element region is formed with an insulated gate...

07/10/14 - 20140191249 - Active led module with led and transistor formed on same substrate
An LED module is disclosed containing an integrated driver transistor (e.g, a MOSFET) in series with an LED. In one embodiment, LED layers are grown over a substrate. The transistor regions are formed over the same substrate. After the LED layers, such as GaN layers, are grown to form the...

07/10/14 - 20140191250 - Method for manufacturing semiconductor device, and semiconductor device
A method for manufacturing a semiconductor device is carried out by readying each of a semiconductor element, a substrate having Cu as a principal element at least on a surface, and a ZnAl solder chip having a smaller shape than that of the semiconductor element; disposing the semiconductor element and...

07/10/14 - 20140191251 - Silicon carbide semiconductor device and method of manufacturing the same
It is expected that both reduction of the resistance of a source region and reduction of a leakage current in a gate oxide film be achieved in an MOSFET in a silicon carbide semiconductor device. A leakage current to occur in a gate oxide film of the MOSFET is suppressed...

07/03/14 - 20140183551 - Blanket epi super steep retrograde well formation without si recess
A method of forming SSRW FETs with controlled step height between a field oxide and epitaxially grown silicon and the resulting devices are provided. Embodiments include providing a SiN layer on a substrate, forming first, second, and third spaced STI regions of field oxide through the SiN layer and into...

07/03/14 - 20140183552 - Transistor structures having a deep recessed p+ junction and methods for making same
A transistor device having a deep recessed P+ junction is disclosed. The transistor device may comprise a gate and a source on an upper surface of the transistor device, and may include at least one doped well region, wherein the at least one doped well region has a first conductivity...

07/03/14 - 20140183553 - Transistor structures having reduced electrical field at the gate oxide and methods for making same
A transistor device having reduced electrical field at the gate oxide interface is disclosed. In one embodiment, the transistor device comprises a gate, a source, and a drain, wherein the gate is at least partially in contact with a gate oxide. The transistor device has a P+ region within a...

07/03/14 - 20140183554 - Schottky barrier diode and method of manufacturing the same
A Schottky barrier diode includes: an n+ type silicon carbide substrate; an n− type epitaxial layer disposed on a first surface of the n+ type silicon carbide substrate and includes an electrode area and a terminal area positioned outside of the electrode area; a first trench and a second trench...

07/03/14 - 20140183555 - Electronic component
According to one embodiment, an electronic component includes a device having a plurality of electrodes; a lead electrically connected to each of the plurality of electrodes; a first resin body sealing the device and a portion of the lead; and a first conductive body connected to the leads and contactable...

07/03/14 - 20140183556 - Semiconductor device and method for fabricating the same
According to the exemplary embodiment of the present inventive concept, the width of a channel can be increased, compared with the conventional art, by forming a plurality of protrusions extending to the p type epitaxial layer on both sides of the trench....

07/03/14 - 20140183557 - Semiconductor device structure for ohmic contact and method for fabricating the same
A semiconductor device structure for an ohmic contact is provided, including a silicon carbide substrate and an ohmic contact layer disposed on the silicon carbide substrate. A carbon layer is disposed on the ohmic contact layer. An anti-diffusion layer is disposed on the carbon layer, and a pad layer is...

07/03/14 - 20140183558 - Schottky barrier diode and method of manufacturing the same
A schottky barrier diode includes: an n− type epitaxial layer that is disposed at a first surface of an n+ type silicon carbide substrate; a plurality of n type pillar areas that are disposed at the inside of the n− type epitaxial layer and that are disposed at a first...

07/03/14 - 20140183559 - Semiconductor device and method for fabricating the same
A semiconductor device according to the present inventive concept includes a p type pillar region disposed below the trench, spaced apart from the trench or a first p type pillar region and a second p type pillar region disposed below the trench and corresponding to two corners of the trench....

07/03/14 - 20140183560 - Semiconductor device and method for fabricating the same
A semiconductor device includes an n+ type silicon carbide substrate; a plurality of n type pillar regions, a plurality of p type pillar regions, and an n− type epitaxial layer disposed on a first surface of the n+ type silicon carbide substrate; a p type epitaxial layer and an n+...

07/03/14 - 20140183561 - Semiconductor device and method for manufacturing the same
According to one embodiment, a semiconductor device includes a first semiconductor part and a conductive electrode. The first semiconductor part is made of SiC. The SiC contains a first element as an n-type or p-type impurity. The first semiconductor part has a first interface part. The first interface part is...

07/03/14 - 20140183562 - Semiconductor device and method for fabricating the same
A semiconductor layer 102 having a drift region 132, a body region 103, and a source region 104 provided at a position next to the body region 103; an epitaxial layer 106 in contact with the body region; and a gate insulating film 107 provided on the epitaxial layer are...

07/03/14 - 20140183563 - Nitride semiconductor device with limited instantaneous current reduction
A GaN device suppressing the instantaneous current reduction after the shut-off of a high frequency signal is disclosed. The GaN device provides, on a SiC substrate, an AlN layer, a GaN layer, and an AlGaN layer. The SiC substrate has an energy difference greater than 0.67 eV but less than...

06/26/14 - 20140175457 - Sic-based trench-type schottky device
A SiC-based trench-type Schottky device is disclosed. The device includes: a SiC substrate having first and second surfaces; a first contact metal formed on the second surface and configured for forming an ohmic contact on the substrate; a drift layer formed on the first surface and including a cell region...

06/26/14 - 20140175458 - Graphene structure, graphene device including same, and method of manufacturing graphene structure
A method of manufacturing a graphene structure, the graphene structure, and a graphene device including the graphene structure, include depositing a metal layer over a silicon carbide substrate; and performing, at a first temperature, a heat treatment on the silicon carbide substrate over which the metal layer is deposited to...

06/26/14 - 20140175459 - Silicon carbide semiconductor device and method for manufacturing the same
A SiC semiconductor device includes: a semiconductor switching element having: a substrate, a drift layer and a base region stacked in this order; a source region and a contact region in the base region; a trench extending from a surface of the source region to penetrate the base region; a...

06/26/14 - 20140175460 - Semiconductor devices with minimized current flow differences and methods of same
A semiconductor device with minimized current flow differences and method of fabricating same are disclosed. The method includes forming a semiconductor stack including a plurality of layers that include a first layer having a first conductivity type and a second layer having a first conductivity type, in which the second...

06/26/14 - 20140175461 - Sic epitaxial wafer and method for manufacturing same
Provided are a SiC epitaxial wafer in which the surface density of stacking faults is reduced, and a manufacturing method thereof. The method for manufacturing such a SiC epitaxial wafer comprises a step of determining a ratio of basal plane dislocations (BPD), which causes stacking faults in a SiC epitaxial...

06/19/14 - 20140167068 - Systems and methods for ohmic contacts in silicon carbide devices
A silicon carbide device is presented that includes a gate electrode disposed over a portion of a silicon carbide substrate as well as a dielectric film disposed over the gate electrode. The device has a contact region disposed near the gate electrode and has a layer disposed over the dielectric...

06/19/14 - 20140167069 - Systems and methods for integrating bootstrap circuit elements in power transistors and other devices
Embodiments relate to bootstrap circuits integrated with at least one other device, such as a power transistor or other semiconductor device. In embodiments, the bootstrap circuit can comprise a bootstrap capacitor and a bootstrap diode, or the bootstrap circuit can comprise a bootstrap capacitor and a bootstrap transistor. The bootstrap...

06/19/14 - 20140167070 - Electronic chip and method of fabricating the same
Provided are an electronic chip and a method of fabricating the same. The semiconductor chip may include a substrate, an active device integrated on the substrate, a lower interlayered insulating layer covering the resulting structure provided with the active device, a passive device provided on the lower interlayered insulating layer,...

06/19/14 - 20140167071 - Semiconductor device and method for fabricating the same
A semiconductor device includes: a plurality of n type pillar regions and an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; a p type epitaxial layer and an n+ region disposed on the plurality of n type pillar regions and the n−...

06/19/14 - 20140167072 - Schottky barrier diode and method of manufacturing the same
A schottky barrier diode includes an n− type epitaxial layer disposed at a first surface of an n+ type silicon carbide substrate, a plurality of n type pillar areas disposed in the n− type epitaxial layer at a first portion of a first surface of the n+ type silicon carbide...

06/19/14 - 20140167073 - Silicon carbide semiconductor devices having nitrogen-doped interface
Methods, systems, and devices are disclosed for implementing high power circuits and semiconductor devices. In one aspect, a method for fabricating a silicon carbide semiconductor device includes forming a thin epitaxial layer of a nitrogen doped SiC material on a SiC epitaxial layer formed on a SiC substrate, and thermally...

06/12/14 - 20140159052 - Method and structure for transistor with reduced drain-induced barrier lowering and on resistance
Embodiments of the invention provide an improved method and structure for a transistor with reduced DIBL and RON. A sigma cavity is formed in a semiconductor substrate adjacent to a transistor. The sigma cavity is filled with an epitaxially grown semiconductor material that also serves as a stress-inducing region for...

06/12/14 - 20140159053 - Sic trench gate transistor with segmented field shielding region and method of fabricating the same
A SiC trench gate transistor with segmented field shielding region is provided. A drain region of a first conductivity type is located in a substrate. A first drift layer of the first conductivity type is located on the substrate and a second drift layer of the first conductivity type is...

06/12/14 - 20140159054 - Power module semiconductor device
There is provided a power module semiconductor device allowing reduction in size and weight of a thin type SiC power module. The power module semiconductor device (1) includes: a ceramic substrate (10); a first pattern (D (K4)) of a first copper plate layer (10a) disposed on a surface of the...

06/12/14 - 20140159055 - Substrates for semiconductor devices
wherein if the synthetic diamond wafer is a polycrystalline CVD diamond wafer then the silicon carbide layer is formed on the growth face of the polycrystalline CVD diamond wafer....

06/12/14 - 20140159056 - Silicon carbide semiconductor device and method for manufacturing the same
There is provided a silicon carbide semiconductor device having excellent electrical characteristics such as channel mobility, and a method for manufacturing the same. A semiconductor device includes a substrate made of silicon carbide and having an off-angle of greater than or equal to 50° and less than or equal to...

06/12/14 - 20140159057 - Silicon carbide semiconductor device and method for manufacturing the same
There is provided a silicon carbide semiconductor device having excellent electrical characteristics such as channel mobility, and a method for manufacturing the same. A semiconductor device includes a substrate made of silicon carbide and having an off-angle of greater than or equal to 50° and less than or equal to...

06/12/14 - 20140159058 - Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device
In a silicon carbide semiconductor device, a trench penetrates a source region and a first gate region and reaches a drift layer. On an inner wall of the trench, a channel layer of a first conductivity-type is formed by epitaxial growth. On the channel layer, a second gate region of...

06/05/14 - 20140151717 - Packaged vertical power device comprising compressive stress and method of making a packaged vertical power device
A packaged vertical semiconductive device including a compressive stress and a method of making such a packaged vertical semiconductive device are disclosed. In one embodiment an assembled device includes a carrier, a connection layer disposed on the carrier, the connection layer having a first height, and a chip disposed on...

06/05/14 - 20140151718 - Semiconductor device and manufacturing method thereof
A semiconductor device according to the present invention includes a die pad, a semiconductor element joined to an upper surface of the die pad, and a resin sheet making close contact with a lower surface of the die pad, wherein the semiconductor element is resin-sealed together with the die pad...

06/05/14 - 20140151719 - Silicon carbide semiconductor element
This silicon carbide semiconductor element includes: a body region of a second conductivity type which is located on a drift layer of a first conductivity type; an impurity region of the first conductivity type which is located on the body region; a trench which runs through the body region and...

05/29/14 - 20140145206 - Semiconductor device
A semiconductor device includes at least two device cells integrated in a semiconductor body. Each device cell includes a drift region, a source region, a drain region arranged between the source region and the drift region, a diode region, a pn junction between the diode region and the drift region,...

05/29/14 - 20140145207 - Schottky barrier diode and fabricating method thereof
A Schottky barrier diode and fabricating method thereof are disclosed. A semiconductor substrate may have a first surface and a second surface positioned oppositely to be provided. Several trenches are formed on the first surface. Each trench has a sidewall with a first depth and a first bottom surface. An...

05/29/14 - 20140145208 - Cascoded semiconductor devices
A cascoded power semiconductor circuit has a clamp circuit between the source and gate of a gallium nitride or silicon carbide FET to provide avalanche protection for the cascode MOSFET transistor....

05/29/14 - 20140145209 - Wide band gap semiconductor device
A semiconductor device comprises an n+ type SiC semiconductor substrate, an n type low concentration drift layer of an SiC semiconductor on the substrate, p type channel regions selectively arranged in the drift layer with a specified distance between the channel regions, an n type source region selectively arranged in...

05/29/14 - 20140145210 - Semiconductor device
A semiconductor device according to an embodiment includes: a first diamond semiconductor layer of a first conductivity type including a main surface having a first plane orientation; a trench structure formed in the first diamond semiconductor layer; a second diamond semiconductor layer formed on the first diamond semiconductor layer in...

05/29/14 - 20140145211 - Protective interface in silicon carbide semiconductor devices
Methods, systems, and devices are disclosed for implementing high power circuits and semiconductor devices. In one aspect, a method for fabricating a silicon carbide (SiC) device includes forming a thin layer of a protection material over a SiC substrate, in which the protection material has a lattice constant that substantially...

05/29/14 - 20140145212 - Silicon carbide semiconductor device and method of manufacturing the same
A semiconductor device includes a silicon carbide semiconductor substrate, a transistor formed in a cell region of the semiconductor substrate, and a voltage-breakdown-resistant structure formed in a region which surrounds an outer periphery of the cell region. The semiconductor substrate includes a first conductivity type substrate, a first conductivity type...

05/29/14 - 20140145213 - Schottky diode
The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the drift layer. The metal for the Schottky layer and the semiconductor material for the drift layer are selected to...

05/29/14 - 20140145214 - Sic epitaxial wafer and method for producing same, and device for producing sic epitaxial wafer
A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SIC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent...