FREE patent keyword monitoring and additional FREE benefits. http://images1.freshpatents.com/images/triangleright (1K) REGISTER now for FREE triangleleft (1K)
FreshPatents.com Logo    FreshPatents.com icons
Monitor Keywords Patent Organizer File a Provisional Patent Browse Inventors Browse Industry Browse Agents

Diamond Or Silicon Carbide

Diamond Or Silicon Carbide patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

Related Categories:

Active Solid-state Devices (e.g., Transistors, Solid-state Diodes)


Specified Wide Band Gap (1.5ev) Semiconductor Material Other Than Gaasp Or Gaalas > Diamond Or Silicon Carbide



Forming embedded source and drain regions to prevent bottom leakage in a dielectrically isolated fin field effect transistor (finfet) device
01/29/15 - 20150028348 - Approaches for isolating source and drain regions in an integrated circuit (IC) device (e.g., a fin field effect transistor (finFET)) are provided. Specifically, the FinFET device comprises a gate structure formed over a finned substrate; an isolation oxide beneath an active fin channel of the gate structure; an embedded source...

Method to induce strain in 3-d microfabricated structures
01/29/15 - 20150028349 - Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic...

Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling
01/29/15 - 20150028350 - Methods of forming a semiconductor structure include the use of channeled implants into silicon carbide crystals. Some methods include providing a silicon carbide layer having a crystallographic axis, heating the silicon carbide layer to a temperature of about 300° C. or more, implanting dopant ions into the heated silicon carbide...

Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions
01/29/15 - 20150028351 - A semiconductor device structure according to some embodiments includes a silicon carbide substrate having a first conductivity type, a silicon carbide drift layer having the first conductivity type on the silicon carbide substrate and having an upper surface opposite the silicon carbide substrate, and a buried junction structure in the...

Semiconductor device
01/29/15 - 20150028352 - [Solution Means] A semiconductor device 1 includes a substrate 7 made of an n+ type SiC and having a predetermined off-angle, a drift layer 8 made of an n− type SiC and formed on the substrate 7, a plurality of unit cells 10 demarcated in the drift layer 8 by...

Schottky barrier detection devices having a 4h-sic n-type epitaxial layer
01/29/15 - 20150028353 - A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12°; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a...

Silicon carbide devices having smooth channels
01/29/15 - 20150028354 - Methods of forming silicon carbide power devices are provided. An n− silicon carbide layer is provided on a silicon carbide substrate. A p-type silicon carbide well region is provided on the n− silicon carbide layer. A buried region of p+ silicon carbide is provided on the p-type silicon carbide well...

Method of forming a semiconductor device
01/29/15 - 20150028355 - A semiconductor device having dislocations and a method of fabricating the semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate having an isolation feature therein and two gate stacks overlying the substrate, wherein one of...

Enhanced gate dielectric for a field effect device with a trenched gate
01/22/15 - 20150021623 - The present disclosure relates to a silicon carbide (SiC) field effect device that has a gate assembly formed in a trench. The gate assembly includes a gate dielectric that is an dielectric layer, which is deposited along the inside surface of the trench and a gate dielectric formed over the...

Lift-off of epitaxial layers from silicon carbide or compound semiconductor substrates
01/22/15 - 20150021624 - A method to remove epitaxial semiconductor layers from a substrate by growing an epitaxial sacrificial layer on the substrate where the sacrificial layer is a transition metal nitride (TMN) or a TMN ternary compound, growing one or more epitaxial device layers on the sacrificial layer, and separating the device layers...

Semiconductor fin isolation by a well trapping fin portion
01/22/15 - 20150021625 - A bulk semiconductor substrate including a first semiconductor material is provided. A well trapping layer including a second semiconductor material and a dopant is formed on a top surface of the bulk semiconductor substrate. The combination of the second semiconductor material and the dopant within the well trapping layer is...

Bipolar transistor and a method for manufacturing a bipolar transistor
01/15/15 - 20150014704 - A bipolar transistor includes a semiconductor structure including an emitter area, a base area and a collector area. The emitter area is electrically connected to an emitter contact of the bipolar transistor. Further, the emitter area has a first conductivity type. The base area is electrically connected to a base...

Semiconductor device
01/15/15 - 20150014705 - An optical fiber is provided between a photodiode and a semiconductor active portion of a wide gap semiconductor element forming portion such that emitted light at the time of light emission of the semiconductor active portion of the wide gap semiconductor element forming portion is incident from an incident surface...

Vertical hetero wide bandgap transistor
01/15/15 - 20150014706 - A vertical hetero transistor provides a wide bandgap, increases the breakdown voltage or reduces the on resistance of the switching transistor or both....

Method for producing a mos stack on a diamond substrate
01/15/15 - 20150014707 - The invention relates to a method for producing a component comprising a conductive grid insulated from a semiconductor monocrystalline diamond substrate by an insulating region, comprising the following steps: a) oxygenating the surface of the substrate so as to replace the hydrogen surface terminations of the substrate with oxygen surface...

Semiconductor devices and methods of manufacture
01/08/15 - 20150008446 - A method of manufacturing a semiconductor device is presented. The method includes providing a semiconductor layer comprising silicon carbide, wherein the semiconductor layer comprises a first region doped with a first dopant type. The method further includes implanting the semiconductor layer with a second dopant type using a single implantation...

Silicon carbide device and a method for manufacturing a silicon carbide device
01/08/15 - 20150008447 - A silicon carbide device includes an epitaxial silicon carbide layer having a first conductivity type and a buried lateral silicon carbide edge termination region within the epitaxial silicon carbide layer and having a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide...

Metal-oxide-semiconductor (mos) devices with increased channel periphery and methods of manufacture
01/08/15 - 20150008448 - A semiconductor device includes a drift layer disposed on a substrate. The drift layer has a non-planar surface having a plurality of repeating features oriented parallel to a length of a channel of the semiconductor device. Further, each the repeating features have a dopant concentration higher than a remainder of...

Metal-oxide-semiconductor (mos) devices with increased channel periphery and methods of manufacture
01/08/15 - 20150008449 - A semiconductor device includes a silicon carbide (SiC) drift layer disposed on a (0001) oriented SiC substrate. The SiC drift layer has a non-planar surface including a plurality of repeating features that are oriented parallel to a length of a channel of the semiconductor device. Further, the channel region is...

Wide band gap semiconductor device
01/08/15 - 20150008450 - The present invention includes a second source layer formed on a surface layer of a p base layer in the same step as that of forming a n+ source layer to sandwich a field insulating film, a second gate electrode being the same layer as a gate polysilicon and formed...

Formation of self-aligned source for split-gate non-volatile memory cell
01/08/15 - 20150008451 - A memory device having a pair of conductive floating gates with inner sidewalls facing each other, and disposed over and insulated from a substrate of first conductivity type. A pair of spaced apart conductive control gates each disposed over and insulated from one of the floating gates, and each including...

Semiconductor device and method of fabricating the same
01/08/15 - 20150008452 - A semiconductor device comprises a substrate and first and second stress-generating epitaxial regions on the substrate and spaced apart from each other. A channel region is on the substrate and positioned between the first and second stress-generating epitaxial regions. A gate electrode is on the channel region. The channel region...

Substrate, semiconductor device, and method of manufacturing the same
01/08/15 - 20150008453 - A substrate capable of achieving a lowered probability of defects produced in a step of forming an epitaxial film or a semiconductor element, a semiconductor device including the substrate, and a method of manufacturing a semiconductor device are provided. A substrate is a substrate having a front surface and a...

Substrate, semiconductor device, and method of manufacturing the same
01/08/15 - 20150008454 - A substrate capable of achieving a lowered probability of defects produced in a step of forming an epitaxial film or a semiconductor element, a semiconductor device including the substrate, and a method of manufacturing a semiconductor device are provided. A substrate is a substrate having a front surface and a...

Over-voltage protection of gallium nitride semiconductor devices
01/01/15 - 20150001551 - A monolithically integrated semiconductor assembly is presented. The semiconductor assembly includes a substrate including silicon carbide (SiC), and gallium nitride (GaN) semiconductor device is fabricated on the substrate. The semiconductor assembly further includes at least one transient voltage suppressor (TVS) structure fabricated in or on the substrate, wherein the TVS...

Semiconductor device
01/01/15 - 20150001552 - According to one embodiment, a semiconductor device includes a first semiconductor region, a first electrode, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a fifth semiconductor region, and a second electrode. The first electrode forms a Schottky junction with the first region. The second region is...

Semiconductor device
01/01/15 - 20150001553 - A semiconductor device includes: a first silicon carbide semiconductor layer; a p-type first impurity region provided in the first silicon carbide semiconductor layer; and a first ohmic electrode forming ohmic contact with the p-type first impurity region. The first ohmic electrode is a silicon alloy containing nitrogen, an average concentration...

Silicon carbide semiconductor device
01/01/15 - 20150001554 - A silicon carbide semiconductor device includes a low-concentration n-type drift layer deposited on a silicon carbide substrate to form a semiconductor substrate. A first front surface metal layer, which forms a Schottky contact with the semiconductor substrate, is formed on a front surface of the semiconductor substrate. An outer circumferential...

Methods for coating a substrate with an amphiphilic compound
01/01/15 - 20150001555 - Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting...

Vertical power transistor with built-in gate buffer
12/25/14 - 20140374773 - A vertical power transistor is monolithically packaged on a semiconductor die with gate buffer circuitry. The gate buffer circuitry is adapted to deliver a biasing voltage to a gate contact of the vertical power transistor for switching the device between an ON state and an OFF state. By monolithically packaging...

Semiconductor device and method for manufacturing same
12/25/14 - 20140374774 - This semiconductor device includes a silicon carbide layer of a first conductivity type having first and second principal surfaces and including an element region and a terminal region surrounding the element region on the first principal surface. The silicon carbide layer includes a first dopant layer of the first conductivity...

Electronic component and manufacturing method for electronic component
12/25/14 - 20140374775 - A first metal film, of which major component is copper, is formed on a surface of a conductive portion which becomes a front surface electrode of a semiconductor element. A second metal film of which major component is silver is formed on a surface of the first metal film. A...

High-voltage cascaded diode with hemt and monolithically integrated semiconductor diode
12/18/14 - 20140367700 - An embodiment of a cascaded diode having a breakdown voltage exceeding 300V includes an HEMT and a Si Schottky diode. The HEMT includes a gate, a drain, a source, and a two-dimensional electron gas channel region connecting the source and the drain and controlled by the gate. The HEMT has...

Semiconductor device and method of manufacturing semiconductor device
12/18/14 - 20140367701 - The semiconductor device includes; a semiconductor element in which a metallization layer is formed on the backside side; a metallic lead frame that is arranged in parallel, with a distance spaced apart from the semiconductor element; a first bonding layer that is provided between the semiconductor element and the lead...

Semiconductor device and method of manufacturing the same
12/18/14 - 20140367702 - An object is to provide a fin integrated type semiconductor device and a method of manufacturing the same, which are provided with a simple structure and good heat dissipation characteristics. The semiconductor device includes: a base plate on which fins arranged in a standing condition are formed on a first...

Solid state light sources based on thermally conductive luminescent elements containing interconnects
12/18/14 - 20140367703 - Solid state light sources based on LEDs mounted on or within thermally conductive luminescent elements provide both convective and radiative cooling. Low cost self-cooling solid state light sources can integrate the electrical interconnect of the LEDs and other semiconductor devices. The thermally conductive luminescent element can completely or partially eliminate...

Semiconductor devices
12/11/14 - 20140361313 - A method of manufacturing a semiconductor device includes forming first and second gate structures on a substrate in first and second regions, respectively, forming a first capping layer on the substrate by a first high density plasma process, such that the first capping layer covers the first and second gate...

Semiconductor alloy fin field effect transistor
12/11/14 - 20140361314 - Semiconductor alloy fin structures can be formed by recessing a semiconductor material layer including a first semiconductor material to form a trench, and epitaxially depositing a semiconductor alloy material of the first semiconductor material and a second semiconductor material within the trench. The semiconductor alloy material is epitaxially aligned to...

Semiconductor device and method of manufacturing the same
12/11/14 - 20140361315 - A semiconductor device according to one embodiment having a first region comprising a first dopant type, a second region adjacent the first region haivng a second dopant type and a channel region. There is a third region segregated from the channel region having a second dopant type, wherein the third...

Wide band gap semiconductor wafers grown and processed in a microgravity environment and method of production
12/04/14 - 20140353682 - Wide band gap semiconductor wafers with previously unattainable characteristics and the method of processing and producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to process silicon carbide and other similar wide band gap semiconductors in a microgravity environment. The wafers are placed...

Semiconductor device and method of manufacturing the same
12/04/14 - 20140353683 - In a semiconductor substrate preparation step, a semiconductor substrate which is made of SiC and in which a first semiconductor region of a first conductivity type is formed is prepared. In a second semiconductor region forming step, a second semiconductor region is formed by implanting an impurity of a second...

Silicon carbide epitaxial wafer and method for fabricating the same
12/04/14 - 20140353684 - A method for fabricating a silicon carbide epitaxial wafer according to the embodiment includes introducing a carbon source and a silicon source into a reactor in which a silicon carbide wafer is provided; heating the reactor; and adjusting an amount of the silicon source or the carbon source introduced into...

Semi-polar iii-nitride films and materials and method for making the same
12/04/14 - 20140353685 - A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been...

Semiconductor device
12/04/14 - 20140353686 - A semiconductor device having a low feedback capacitance and a low switching loss. The semiconductor device includes: a substrate; a drift layer formed on a surface of the semiconductor substrate; a plurality of first well regions formed on a surface of the drift layer; a source region which is an...

Vertical-channel type junction sic power fet and method of manufacturing same
11/27/14 - 20140346528 - In order to secure the performance of a SiC-based JFET having an impurity diffusion rate lower than silicon-based one, a gate depth is secured while precisely controlling a distance between gate regions, instead of forming gate regions by ion implantation into the side wall of a trench. This means that...

Semiconductor device and method for manufacturing the semiconductor device
11/27/14 - 20140346529 - A semiconductor-device manufacturing method of the present invention includes a step of selectively implanting impurity ions into a surface of an SiC semiconductor layer and forming impurity regions and a step of activating the impurity ions by annealing the SiC semiconductor layer at a temperature of 1400° C. or more...

Semiconductor device and method of manufacturing the same
11/27/14 - 20140346530 - A semiconductor device according to an embodiment of the present invention includes a SiC substrate, an AlN layer provided on the SiC substrate and having a maximum valley depth Rv of 5 nm or less in an upper surface, a channel layer provided on the AlN layer and composed of...

Sic semiconductor device and method for manufacturing the same
11/27/14 - 20140346531 - In a method which heats a layer including nickel and titanium on a SiC substrate (1) to form a nickel silicide layer (4) including titanium carbide, the layer including nickel and titanium is formed by vapor deposition or sputtering. The nickel silicide layer (4) is heated at a temperature that...

Semiconductor device with substrate via hole and method to form the same
11/20/14 - 20140339568 - A process to form a substrate via hole is disclosed. The process includes steps of (1) forming a semiconductor layer on a substrate; (2) forming a gate and an auxiliary electrode simultaneously on a semiconductor layer; and (3) etching the substrate and the semiconductor layer from the back surface of...

Semiconductor device
11/20/14 - 20140339569 - A semiconductor device formed on a silicon carbide substrate that has a front surface on which an electrode is provided and a back surface on which an electrode is provided includes a drain layer, a drift layer, a base layer, a gate electrode that is located in a trench that...

Access-resistant diode array device having enhanced stability
11/20/14 - 20140339570 - A device includes a substrate carrying an array of diodes, organized in rows and columns, and a peripheral substrate contact is arranged on at least one side of the array. The substrate includes one or more buried conducting lines electrically connected to the peripheral substrate contact and being positioned between...

Silicon carbide epitaxial wafer and manufacturing method therefor
11/20/14 - 20140339571 - A SiC epitaxial wafer obtained by forming a SiC epitaxial layer on a 4H—SiC single-crystal substrate that is tilted at an off-angle of 0.4° to 5°, wherein linear density of step bunchings, which are connected to shallow pits which are due to screw dislocation in the SiC epitaxial wafer, is...

Memory with carbon-containing silicon channel
11/20/14 - 20140339572 - A memory includes a first memory cell and a second memory cell formed over the first memory cell. Each of the first memory cell and the second memory cell includes a channel region comprising silicon and carbon, a control gate, and a dielectric stack between the channel region and the...

Semiconductor structure with different fins of finfets
11/13/14 - 20140332824 - A semiconductor structure for forming FinFETs is described. The semiconductor structure includes a semiconductor substrate, a plurality of odd fins of the FinFETs on the substrate, and a plurality of even fins of the FinFETs on the substrate between the odd fins of the FinFETs. The odd fins of the...

Silicon carbide barrier diode
11/06/14 - 20140327017 - Improved semiconductor devices are fabricated utilizing nickel gallide and refractory borides deposited onto a silicon carbide semiconductor substrate. Varying the deposition and annealing parameters of fabrication can provide a more thermally stable device that has greater barrier height and a low ideality. This improvement in the electrical properties allows use...

Power semiconductor device, method of manufacturing the device and bonding wire
11/06/14 - 20140327018 - It is an object of the present invention to provide a power semiconductor device, which is capable of being operable regardless of thermal stress generation, reducing a heat generation from wire, securing the reliability of bonding portion when the device is used for dealing with a large amount current and/or...

Wide bandgap semiconductor device
11/06/14 - 20140327019 - A wide bandgap semiconductor device includes a first conductive type high-concentration wide bandgap semiconductor substrate, a first conductive type low-concentration wide bandgap semiconductor deposited film which is formed on the semiconductor substrate, a metal film which is formed on the semiconductor deposited film so that a Schottoky interface region is...

Force detection device, and force transducer device
10/30/14 - 20140319538 - A force detection device includes a diamond piezoresistor including a highly orientated diamond into which boron is introduced as an impurity. The absolute value of the piezoresistance coefficient of the diamond piezoresistor is greater than the absolute value of a piezoresistance coefficient π11 or π12 in a case in which...

Semiconductor wafer manufacturing method, and semiconductor wafer
10/30/14 - 20140319539 - A method for manufacturing a semiconductor wafer includes a carbon layer formation step, a through hole formation step, a feed layer formation step, and an epitaxial layer formation step. In the carbon layer formation step, a carbon layer (71) is formed on a surface of a substrate (70) made of...

Semiconductor device
10/30/14 - 20140319540 - A semiconductor device is provided with a semiconductor substrate in which a power semiconductor element part and a temperature sensing diode part are provided. The temperature sensing diode part includes a first semiconductor region, a second semiconductor region, a first base region, and a first drift region. In the semiconductor...

Voidlessly encapsulated semiconductor die package
10/30/14 - 20140319541 - A system can include a semiconductor die having a first side and a second side opposite the first side. The system can also include a first slug coupled to a portion of the first side of the die. The system can further include a second slug coupled to a portion...

Molybdenum trioxide-coated hydrogen-terminated diamond surface and uses thereof
10/30/14 - 20140319542 - The present invention provides a conducting material comprising a carbon-based material selected from a diamond or an insulating diamond-like carbon, having a hydrogen-terminated surface and a layer of MoO3 coating said surface; as well as a method for the fabrication of such a material. The conducting material of the invention...

Fin field-effect transistors
10/30/14 - 20140319543 - A method is provided for fabricating a fin field-effect transistor. The method includes providing a semiconductor substrate; and forming a plurality of fins on top of the semiconductor substrate. The method also includes forming isolation structures between adjacent fins; and forming doping sidewall spacers in top portions of the isolation...

Apparatus and method for fabricating epi wafer and epi wafer
10/30/14 - 20140319544 - Further, an apparatus for fabricating an epi wafer according to the embodiment comprises a first chamber comprising an epi deposition part; a second chamber comprising a protective layer forming part and a cooling part; and a wafer transfer apparatus connected to lower portions of the first chamber and the second...

Method for deposition of silicon carbide and silicon carbide epitaxial wafer
10/30/14 - 20140319545 - A method for deposition of silicon carbide according to an embodiment includes preparing a wafer in a susceptor; introducing first etching gas into the susceptor; introducing second etching gas into the susceptor; producing an intermediate compound by introducing a reactive raw material into the susceptor; and forming a silicon carbide...

Semiconductor power device having a heat sink
10/23/14 - 20140312360 - A semiconductor device includes an electrically conducting carrier having a mounting surface. The semiconductor device further includes a metal block having a first surface facing the electrically conducting carrier and a second surface facing away from the electrically conducting carrier. A semiconductor power chip is disposed over the second surface...

Semiconductor element, semiconductor device and method for manufacturing semiconductor element
10/23/14 - 20140312361 - The semiconductor element has an electrode including: a Ni-inclusion metal layer containing nickel formed on a side of at least one surface of the semiconductor-element constituting part; a Ni-barrier metal layer formed outwardly on a side of the Ni-inclusion metal layer opposite to the side toward the semiconductor-element constituting part;...

Compound semiconductor device and method of manufacturing the same
10/23/14 - 20140312362 - An embodiment of a compound semiconductor device includes: a substrate; a compound semiconductor stacked structure of nitride over the substrate; a passivation film that covers the compound semiconductor stacked structure; a gate electrode, a source electrode, and a drain electrode at a level above the compound semiconductor stacked structure; and...

Semiconductor device
10/16/14 - 20140306239 - A semiconductor device includes a first conduction type semiconductor substrate, a first conduction type semiconductor deposition layer, a trench, second conduction type wells, a JFET region, a first conduction type first source region, a first source region, a trench-type source electrode, a gate insulator film, a gate electrode, and a...

Silicon carbide semiconductor device and manufacturing method of the same
10/09/14 - 20140299886 - A silicon carbide semiconductor device includes: a semiconductor substrate made of silicon carbide single crystal and having a principal surface and a backside; and an ohmic electrode contacting one of the principal surface and the backside of the semiconductor substrate in an ohmic manner. A boundary between the ohmic electrode...

Semiconductor devices comprising getter layers and methods of making and using the same
10/09/14 - 20140299887 - Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present...

Silicon carbide semiconductor device
10/09/14 - 20140299888 - A SiC semiconductor device capable of increasing a switching speed without destroying a gate insulating film. In addition, in a SiC-MOSFET including an n-type semiconductor substrate formed of SiC, a p-type semiconductor layer is entirely or partially provided on an upper surface of a p-type well layer that has a...

Semiconductor devices
10/09/14 - 20140299889 - A semiconductor device includes a first gate structure on a first region of a substrate and a second gate structure on a second region of the substrate, a first impurity region on an upper portion of the substrate adjacent to the first gate structure and a second impurity region on...

Semiconductor devices comprising getter layers and methods of making and using the same
10/09/14 - 20140299890 - Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present...

Semiconductor device
10/09/14 - 20140299891 - A semiconductor device that can improve reliability while suppressing increase of a conduction loss or a switching loss. In the semiconductor device, when a two-dimensional shape on a main surface of the semiconductor substrate is an unit cell, the shape being a repeating unit of a plurality of well regions...