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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Specified Wide Band Gap (1.5ev) Semiconductor Material Other Than Gaasp Or Gaalas > Diamond Or Silicon Carbide Diamond Or Silicon CarbideDiamond Or Silicon Carbide patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/17/08 - 20080012026 - Trench mos type silicon carbide semiconductor device and method for manufacturing the same A trench MOS type SiC semiconductor device includes a first conductivity semiconductor substrate, a first conductivity drift layer on the substrate, a second conductivity base layer on the drift layer, a first conductivity source layer on the base layer, a stripe shaped trench reaching from the surface of the source ... 01/03/08 - 20080001159 - Semiconductor device A semiconductor device includes a semiconductor substrate of a first conductivity type having a top surface and a bottom surface, a semiconductor layer of a first conductivity type formed on the top surface of the semiconductor substrate, and having an active region and an edge termination region surrounding the active ... 12/20/07 - 20070290211 - Bipolar semiconductor device and process for producing the same A process for manufacturing a bipolar type semiconductor device in which at least a part of a region where an electron and a hole are recombined during current flowing is formed with a silicon carbide epitaxial layer that has been grown from the surface of a silicon carbide substrate, is ... 11/29/07 - 20070272929 - Diamond n-type semiconductor, method of manufacturing the same, semiconductor device, and electron emitting device The present invention relates to a diamond n-type semiconductor in which the amount of change in carrier concentration is fully reduced in a wide temperature range. The diamond n-type semiconductor comprises a diamond substrate, and a diamond semiconductor formed on a main surface thereof and turned out to be n-type. ... 11/15/07 - 20070262324 - Silicon carbide semiconductor device A silicon carbide semiconductor device is provided with a semiconductor substrate (20) of silicon carbide of a first conductivity type, a hetero semiconductor region (60) forming a hetero-junction with the semiconductor substrate (20), an insulated gate including a gate electrode (40) and a gate insulator layer (30) formed on the ... 11/15/07 - 20070262322 - Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide ... 11/15/07 - 20070262321 - Lateral field effect transistor and its fabrication comprising a spacer layer above and below the channel layer A lateral field effect transistor for high switching frequencies having a source region layer (4) and a drain region layer (5) laterally spaced and of highly doped first conductivity type, a first-conductivity-type channel layer (6) of lower doping concentration extending laterally and interconnecting the source region layer (4) and the ... 11/15/07 - 20070262320 - Electron emitter and the method of manufacturing the same apparatus An electron emitter according to the present invention includes: an area in which a surface of the substrate is exposed or an area in which the inner surface of the substrate is exposed; the SiC substrate with the (0001) surface as a principal surface; the electron emission layer has carbon ... 11/08/07 - 20070257265 - Use of tungsten interlayer to enhance the initial nucleation and conformality of ultrananocrystalline diamond (uncd) thin films Extremely smooth (6 nm roughness) and continuous ultrananocrystalline diamond (UNCD) thin films were achieved by microwave plasma chemical vapor deposition using a thin 10 nm tungsten (W) interlayer between the silicon (Si) substrate and the diamond film. The W interlayer significantly increased the initial UNCD nucleation density to >1012 sites/cm2, ... 11/01/07 - 20070252154 - Semiconductor chip manufacturing method, semiconductor chip, semiconductor thin film chip, electron tube and photo-detecting device The present invention relates to a semiconductor chip manufacturing method in which a semiconductor thin film can be cut in a relatively short time and the cut surface can be relatively smoothly formed. When an Si substrate having a diamond thin film formed on the surface thereof is cut in ... 10/18/07 - 20070241338 - Sic semiconductor device and method for manufacturing the same A SiC semiconductor device includes: a SiC substrate having a drain layer, a drift layer and a source layer stacked in this order; multiple trenches penetrating the source layer and reaching the drift layer; a gate layer on a sidewall of each trench; an insulation film on the sidewall of ... 09/13/07 - 20070210316 - Semiconductor device and manufacturing method thereof A semiconductor device and a manufacturing method thereof uses a semiconductor substrate of silicon carbide. On one principal surface side of the substrate, at its central section, a layer of silicon carbide or gallium nitride as a semiconductor layer having the thickness at least necessary for breakdown voltage blocking is ... 08/30/07 - 20070200117 - Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same A silicon carbide semiconductor device includes a substrate and a junction field effect transistor. The transistor includes: a first semiconductor layer disposed on the substrate; a first gate layer disposed on a surface of the first semiconductor layer; a first channel layer adjacent to the first gate layer on the ... 08/30/07 - 20070200116 - Silicon carbide dimpled substrate A dimpled substrate and method of making including a substrate of high thermal conductivity having a first main surface and a second main surface opposite the first main surface. Active epitaxial layers are formed on the first main surface of the substrate. Dimples are formed as extending from the second ... 08/30/07 - 20070200115 - High power silicon carbide (sic) pin diodes having low forward voltage drops Silicon Carbide (SiC) PiN Diodes are provided having a reverse blocking voltage (VR) from about 3.0 kV to about 10.0 kV and a forward voltage (VF) of less than about 4.3 V. ... 08/30/07 - 20070200114 - Compound semiconductor device, production method of compound semiconductor device and diode A compound semiconductor device includes hexagonal silicon carbide crystal substrate and a boron-phosphide-based semiconductor layer formed on the silicon carbide crystal substrate, wherein the silicon carbide crystal substrate has a surface assuming a {0001} crystal plane, and the boron-phosphide-based semiconductor layer is composed of a {111} crystal stacked on and ... 08/16/07 - 20070187695 - Semiconductor device and method of forming the same A semiconductor device and a method of forming thereof has a base body has a field stopping layer, a drift layer, a current spreading layer, a body region, and a source contact region layered in the order on a substrate. A trench that reaches the field stopping layer or the ... 07/26/07 - 20070170437 - Hierarchical assembly of interconnects for molecular electronics A hierarchical assembly methodology can interconnect individual two- and/or three-terminal molecules with other nanoelements (nanoparticles, nanowires, etc.) to form solution-based suspensions of nanoscale assemblies. The nanoassemblies can then undergo chemical-selective alignment and attachment to nanopatterned silicon and/or other surfaces for interconnection and/or measurement. ... 07/26/07 - 20070170436 - High-withstand voltage wide-gap semiconductor device and power device A semiconductor device with high withstand voltage, reduced forward-direction voltage degradation, long lifetime and high reliability, is provided. A junction between the drift layer and anode layer of a bipolar semiconductor device and an electric field relaxation layer are formed at a distance from each other, and an edge portion ... 07/12/07 - 20070158658 - Methods of fabricating vertical jfet limited silicon carbide metal-oxide semiconductor field effect transistors Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) may include an n-type silicon carbide drift layer, a first p-type silicon carbide region adjacent the drift layer and having a first n-type silicon carbide region therein, an oxide layer on the drift layer, and an n-type silicon carbide limiting region disposed ... 06/28/07 - 20070145378 - Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof, and methods of fabricating same A bipolar junction transistor (BJT) includes a silicon carbide (SiC) collector layer of first conductivity type, an epitaxial silicon carbide base layer of second conductivity type on the silicon carbide collector layer, and an epitaxial silicon carbide emitter mesa of the first conductivity type on the epitaxial silicon carbide base ... 06/28/07 - 20070145377 - Semiconductor device and method for manufacturing same A semiconductor device of a double diffused MOS structure employing a silicon carbide semiconductor substrate. The semiconductor device comprises a silicon carbide semiconductor epitaxial layer provided on a surface of the silicon carbide semiconductor substrate and having a first conductivity which is the same conductivity as the silicon carbide semiconductor ... 06/21/07 - 20070138482 - Silicon carbide semiconductor device and method for producing the same A silicon carbide semiconductor device, includes: 1) a silicon carbide substrate; 2) a silicide electrode configured to be formed by depositing a contact parent material on the silicon carbide substrate in such a manner as to cause a solid phase reaction, the silicide electrode being a lower carbon content silicide ... 06/14/07 - 20070131938 - Merged and isolated power mesfet devices A first type of merged power MESFET device includes two monolithically integrated MESFETS. The MESFETS share common sources and gates, and are sized so that one MESFET may be used as a power device while the other is used as a current-sense device. A second type of merged power MESFET ... 06/07/07 - 20070126007 - Sic semiconductor device and method of fabricating same A SiC semiconductor device and method of fabricating a SiC semiconductor device is provided. The method includes forming a source region and a drain region over a silicon carbide layer which is activated at a high temperature. A gate oxide layer is formed over the silicon carbide layer and is ... 05/17/07 - 20070108450 - Reduction of carrot defects in silicon carbide epitaxy Single crystal silicon carbide epitaxial layer on an off-axis substrate are manufactured by placing the substrate in an epitaxial growth reactor, growing a first layer of epitaxial silicon carbide on the substrate, interrupting the growth of the first layer of epitaxial silicon carbide, etching the first layer of epitaxial silicon ... 05/10/07 - 20070102708 - Semiconductor device provided by silicon carbide substrate and method for manufacturing the same A semiconductor device includes a first field effect transistor including a source and a gate and disposed in a silicon carbide substrate; and a second field effect transistor including a drain and a gate and disposed in the substrate. The drain of the second field effect transistor connects to the ... 05/03/07 - 20070096109 - Semiconductor material, production method thereof and semiconductor device A semiconductor material having a stepwise surface structure of (0001)-plane terraces and (11-2n)-plane steps [n≧0] on the SiC substrate, a semiconductor device using the same and a method of producing the semiconductor material in which a carbon-rich surface is formed on the SiC substrate prior to epitaxial growth of an ... 05/03/07 - 20070096108 - Etch stop layer for a metallization layer with enhanced etch selectivity and hermeticity By providing a barrier layer stack including a silicon nitride layer for confining a copper-based metal region, thereby also effectively avoiding any diffusion of oxygen and moisture into the copper region, and a nitrogen-enriched silicon carbide layer, the total relative permittivity may be maintained at a low level, since the ... 05/03/07 - 20070096107 - Semiconductor devices with dielectric layers and methods of fabricating same A SiC semiconductor device with a SiC layer and an insulating layer is provided. The insulating layer may include glass or ceramic. The thermal expansion coefficient of the insulating layer may be matched to that of SiC to reduce stress at the interface. A method of processing the SiC semiconductor ... 04/26/07 - 20070090370 - Silicon carbide semiconductor device and manufacturing method therefor With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given ... 04/26/07 - 20070090369 - Method for manufacturing p-type group iii nitride semiconductor, and group iii nitride semiconductor light-emitting device The inventive method for manufacturing a p-type group III nitride semiconductor comprises: (a) growing a group III nitride semiconductor containing a p-type dopant at 1000° C. or higher in an atmosphere containing H2 gas and/or NH3 gas; and (b) after the growth of the group III nitride semiconductor, substituting the ... 03/29/07 - 20070069217 - P-i-n diode crystallized adjacent to a silicide in series with a dielectric anitfuse A method is described for forming a nonvolatile one-time-programmable memory cell having reduced programming voltage. A contiguous p-i-n diode is paired with a dielectric rupture antifuse formed of a high-dielectric-constant material, having a dielectric constant greater than about 8. In preferred embodiments, the high-dielectric-constant material is formed by atomic layer ... 03/29/07 - 20070069216 - Substrate for compound semiconductor device and compound semiconductor device using the same A substrate for compound semiconductor device and a compound semiconductor device using the substrate are provided which allow a breakdown voltage to be high, cause little energy loss, and are suitably used for a high-electron mobility transistor etc. An n-type 3C—SiC single crystal buffer layer 3 having a carrier concentration ... 03/15/07 - 20070057262 - Semicoductor device and manufacturing method thereof In a semiconductor device having SiC vertical trench MOSFETs, it is aimed to prevent the generation of large scattering in the channel resistance without largely increasing the average value of channel resistance. A 4H-SiC substrate having a major face thereof that is generally a {0001} face and having an off ... 03/15/07 - 20070057261 - Transparent thin film transistor (tft) and its method of manufacture A transparent thin film transistor (TFT) and its method of manufacture includes: a substrate, a transparent semiconductor layer formed by coating the substrate with an oxide, a nitride, or a carbide to pattern the material, a gate insulating layer formed on the transparent semiconductor layer, a gate electrode formed on ... 03/01/07 - 20070045631 - Silicon carbide semiconductor device having high channel mobility and method for manufacturing the same A silicon carbide semiconductor device having a MOS structure includes: a substrate; a channel area in the substrate; a first impurity area; a second impurity area; a gate insulating film on the channel area; and a gate on the gate insulating film. The channel area provides an electric current path. ... 02/01/07 - 20070023761 - Silicon carbon germanium (sicge) substrate for a group iii nitride-based device A substrate for an electronic device formed in a group III nitride material system comprises a layer of silicon carbon and a layer of silicon carbon germanium over the layer of silicon carbon, the layer of silicon carbon and the layer of silicon carbon germanium forming a substrate for a ... 01/25/07 - 20070018172 - Crystals of phenylalanine derivatives and production methods thereof and particularly α-type, γ-type, ∈-type, η-type, and θ-type crystals thereof. These crystals are excellent in preservation stability or moisture resistance. They can also be produced on an industrial scale. ... 01/11/07 - 20070007537 - Semiconductor device A semiconductor device comprises: a first semiconductor layer of silicon carbide of a first conductivity type; a second semiconductor layer of silicon carbide of a second conductivity type selectively provided on the first semiconductor layer; a main electrode layer of silicon carbide of the first conductivity type selectively provided on ... 01/04/07 - 20070001176 - Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices An improved termination structure for high field semiconductor devices in silicon carbide is disclosed. The termination structure includes a silicon carbide-based device for high-field operation, an active region in the device, an edge termination passivation for the active region, in which the edge termination passivation includes, an oxide layer on ... 01/04/07 - 20070001175 - Silicon carbide epitaxial wafer, method for producing such wafer, and semiconductor device formed on such wafer Provided is a silicon carbide epitaxial wafer which is formed on a substrate that is less than 1° off from the {0001} surface of silicon carbide having an α-type crystal structure, wherein the crystal defects in the SiC epitaxial wafer are reduced while the flatness of the surface thereof is ... 12/28/06 - 20060289874 - Silicon carbide devices with hybrid well regions MOS channel devices and methods of fabricating such devices having a hybrid channel are provided. Exemplary devices include vertical power MOSFETs that include a hybrid well region of silicon carbide and methods of fabricating such devices are provided. The hybrid well region may include an implanted p-type silicon carbide well ... 12/28/06 - 20060289873 - Semiconductor devices and methods of making same A composite structure having a silicon carbide epitaxial layer is provided. The epitaxial layer includes at least four regions arranged vertically and defining respective interfaces, where each of the regions is characterized by a respective impurity concentration, where the impurity concentrations vary across each of the interfaces, and where each ... 12/14/06 - 20060278879 - Nanochannel device and method of manufacturing same The invention provides a device comprising a substrate, a first material disposed on the substrate to form a first material layer, a second material disposed on the substrate to form a second material layer, and a nanochannel bounded by the substrate, the first material layer, and the second material layer. ... 12/07/06 - 20060273323 - Semiconductor device having sic substrate and method for manufacturing the same A semiconductor device includes: a SiC substrate; a silicide layer disposed on the SiC substrate; and a carbide layer disposed on the silicide layer. The silicide layer includes a first metal, and the carbide layer includes a second metal. The first metal is Ni or Ni alloy, and the second ... 11/30/06 - 20060267024 - Semiconductor layer structure and process for producing a semiconductor layer structure The invention relates to a semiconductor layer structure of a monocrystalline silicon carbide layer on a ≧150 mm diameter silicon wafer, the silicon carbide layer having a surface roughness of at most 0.5 nm RMS and a micropipe density of at most 1 cm−2 and being free of defects produced ... 11/30/06 - 20060267023 - Anodically bonded ultra-high-vacuum cell The present invention discloses an anodically bonded vacuum cell structure with a glass substrate including a cavity, and a substrate deposited on the glass substrate, thereby enclosing the cavity to form a bonding interface. The bonding interface having silicon such that the substrate includes a layer of silicon or a ... 11/30/06 - 20060267022 - Field-effect transistor and thyristor A decrease in breakdown voltage can be prevented as much as possible. A field-effect transistor includes: a drain region made of SiC; a drift layer which is formed on the drain region and is made of n-type SiC; a source region which is formed on the surface of the drift ... 11/30/06 - 20060267021 - Power devices and methods of manufacture A power device includes at least one n-type semiconductor layer and at least one p-type silicon carbide epitaxial layer comprising gallium acceptors. Another power device includes at least one epitaxial silicon carbide layer and at least one p-type region formed epitaxially in the epitaxial silicon carbide layer. The p-type region ... 11/23/06 - 20060261349 - Single crystal diamond electrochemical electrode An electrolytic cell includes a container for holding an electrolyte. A conductively doped single crystal diamond anode electrode is positioned to be disposed within the electrolyte, as is a conductive cathode electrode. Conductors are coupled to the electrodes for coupling to a power supply. An electrolyte inlet and an electrolyte ... 11/23/06 - 20060261348 - High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and ... 11/23/06 - 20060261347 - High voltage silicon carbide mos-bipolar devices having bi-directional blocking capabilities and methods of fabricating the same Silicon carbide high voltage semiconductor devices and methods of fabricating such devices are provided. The devices include a voltage blocking substrate. Insulated gate bipolar transistors are provided that have a voltage blocking substrate. Planar and beveled edge termination may be provided. ... 11/23/06 - 20060261346 - High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and ... 11/23/06 - 20060261345 - High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and ... 11/23/06 - 20060261344 - Iii-nitride semiconductor light emitting device The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor layers having a p-type III-nitride semiconductor layer at the top thereof, an SiaCbNc (a≧0,b>0,c≧0,a+c>0) layer ... 11/02/06 - 20060243985 - Sequential lithographic methods to reduce stacking fault nucleation sites An epitaxial silicon carbide layer is fabricated by forming first features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The first features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. A first epitaxial ... 11/02/06 - 20060243984 - Method of and system for forming sic crystals having spatially uniform doping impuritites In a physical vapor transport method and system, a growth chamber charged with source material and a seed crystal in spaced relation is provided. At least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged ... 11/02/06 - 20060243983 - Diamond substrate and method for fabricating the same A diamond substrate and a method for fabricating the same are provided, wherein a protection layer is formed on one surface of a diamond layer in the process of forming the diamond layer by chemical vapor deposition process, for reducing the deformation of the diamond layer. Thereby the deformation of ... 11/02/06 - 20060243982 - Diamond substrate and method for fabricating the same A diamond substrate and a method for fabricating the same are provided wherein a SiC layer is formed on a lower surface of a diamond layer for preventing the diamond layer from being deformed after the process of forming the diamond substrate, and then a semiconductor layer is formed on ... 10/26/06 - 20060237728 - Silicon carbide power devices with self-aligned source and well regions Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices are provided by successively etching a mask layer to provide windows for formation of a source region of a first conductivity type, a buried silicon carbide region of a second conductivity type opposite to the first conductivity type ... 10/05/06 - 20060220028 - Silicon on diamond-like carbon devices Embodiments of the invention provide substrate with an insulator layer on the substrate. The insulator layer may comprise diamond-like carbon. A device, such a tri-gate transistor may be formed on the diamond-like carbon layer. ... 10/05/06 - 20060220027 - Silicon carbide semiconductor device and process for producing the same A method for fabricating a semiconductor device includes the steps of implanting ions into a silicon carbide thin film (2) formed on a silicon carbide substrate (1), heating the silicon carbide substrate in a reduced pressure atmosphere to form a carbon layer (5) on the surface of the silicon carbide ... 10/05/06 - 20060220026 - Semiconductor element In a semiconductor device of the present invention, the top surface of an n-type silicon carbide layer formed on a silicon carbide substrate is miscut from the (0001) plane in the <11-20> direction. A gate electrode, a source electrode and other elements are arranged such that in a channel region, ... 09/21/06 - 20060208261 - Semiconductor device and manufacturing method thereof A high voltage semiconductor device having a high current gain hFE is formed with a collector region (20) of a first conduction type, an emitter region (40) of the first conduction type, and a base region (30) of a second conduction type opposite to the first conduction type located between ... 09/14/06 - 20060202209 - Limiting net curvature in a wafer A method and apparatus for limiting net curvature in a substrate is provided. A layer is formed on one side of a substrate to limit curvature that may be introduced in the substrate by formation of a thermal spreading layer on an opposing side of the substrate. For example, introduction ... 08/24/06 - 20060186416 - Multiple layer and crystal plane orientation semiconductor substrate A semiconductor on insulator substrate and a method of fabricating the substrate. The substrate including: a first crystalline semiconductor layer and a second crystalline semiconductor layer; and an insulating layer bonding a bottom surface of the first crystalline semiconductor layer to a top surface of the second crystalline semiconductor layer, ... 08/03/06 - 20060169985 - Electrode for p-type sic A p-type electrode containing a first electrode material exhibiting an eutectic reaction at a temperature of 600° C. or lower, and a second electrode material of aluminum (Al). ... 07/27/06 - 20060163584 - Boron-doped diamond semiconductor First and second synthetic diamond regions are doped with boron. The second synthetic diamond region is doped with boron to a greater degree than the first synthetic diamond region, and in physical contact with the first synthetic diamond region. In a further example embodiment, the first and second synthetic diamond ... 07/20/06 - 20060157713 - Structures formed in diamond N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers ... 06/29/06 - 20060138430 - Heteroisomer boron carbide devices Semiconductor devices formed using boron carbide heteroisomer junctions or interfaces are provided. The boron carbide heteroisomer junction devices can be incorporated into diodes and transistors. ... 06/22/06 - 20060131589 - Boron carbide particle detectors Boron carbide heteroisomer semiconductor devices are used as particle detectors. The boron carbide semiconductor devices produce electric current in response to incident particles, such as alpha particles, neutrons, or photons. ... 06/22/06 - 20060131588 - Electrode and electron emission applications for n-type doped nanocrystalline materials An electrode having a surface of an electrically conducting ultrananocrystalline diamond having not less than 1019 atoms/cm3 nitrogen with an electrical conductivity at ambient temperature of not less than about 0.1 (Ω·cm)−1 is disclosed as is a method of remediating toxic materials with the electrode. An electron emission device incorporating ... 06/08/06 - 20060118792 - Edge termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same An edge termination structure for a silicon carbide semiconductor device includes a plurality of spaced apart concentric floating guard rings in a silicon carbide layer that at least partially surround a silicon carbide-based junction, an insulating layer on the floating guard rings, and a silicon carbide surface charge compensation region ... 06/08/06 - 20060118791 - Thermal interface material and method for manufacturing same A thermal interface material (40) includes a silver colloid base (32), and an array of carbon nanotubes (22) disposed in the silver colloid base uniformly. The carbon nanotubes have nanometer-scale silver filled therein, are substantially parallel to each other, and extend from a first surface (42) to a second surface ... 06/01/06 - 20060113547 - Methods of fabricating memory devices including fuses and load resistors in a peripheral circuit region Methods of fabricating a semiconductor memory device include forming a plurality of memory cells in a cell region of a semiconductor substrate. An insulating layer is formed on the plurality of memory cells in the cell region and on a peripheral circuit region of the substrate, and a bit line ... 06/01/06 - 20060113546 - Diamond composite heat spreaders having low thermal mismatch stress and associated methods A diamond composite heat spreader having a low thermal mismatch stress can improve reliability and cost of diamond-based heat spreaders. A diamond composite heat spreader can have a thermally conductive base and a diamond film in thermal contact with the thermally conductive base. The diamond film and the thermally conductive ... 06/01/06 - 20060113545 - Wide bandgap semiconductor layers on sod structures Multi-layered structures containing GaN on SOD (silicon/diamond/silicon) substrates are described. The unique substrate/epilayer combination can provide electronic materials suitable for high-power and opto-electronic devices without commonly observed limitations due to excess heat during device operation. The resulting devices have built-in thermal heat spreading capability that result in better performance and ... 05/25/06 - 20060108589 - Semiconductor device A semiconductor device (1) includes an n-type silicon carbide substrate (2) of a high impurity concentration, an n-type silicon carbide layer (3) of a low impurity concentration disposed on the substrate, a first n-type silicon carbide region (4) of a first impurity concentration disposed on the surface of the n-type ... 05/18/06 - 20060102908 - Semiconductor device A semiconductor device includes an SiC substrate, an SiC layer of a first conductivity type disposed on the upper surface of the SiC substrate, a first SiC region of a second conductivity type disposed on the SiC layer, a second SiC region of the first conductivity type disposed on a ... 05/11/06 - 20060097268 - Silicon carbide semiconductor device and method for manufacturing the same A silicon carbide semiconductor device includes: a semiconductor substrate having a silicon carbide substrate, a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer; a trench penetrating the second and the third semiconductor layers to reach the first semiconductor layer; a channel layer on a sidewall and ... 05/11/06 - 20060097267 - Silicon carbide semiconductor device and method for manufacturing the same A method for manufacturing a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate and first to third semiconductor layers; forming a trench in a cell region of the semiconductor substrate; forming a fourth semiconductor layer in the trench; forming an oxide ... 05/11/06 - 20060097266 - Large-diameter sic wafer and manufacturing method thereof From the viewpoint of manufacturing an SiC semiconductor device economically, a present Si device manufacturing line is utilized to make it possible to handle a small-diameter SiC wafer. Polycrystal SiC is grown from at least one surface side of a small-diameter a-SiC single crystal wafer so as to be in ... 05/04/06 - 20060091402 - Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal SiC single crystal that includes a first dopant functioning as an acceptor, and a second dopant functioning as a donor is provided, where the content of the first dopant is no less than 5×1015 atoms/cm3, the content of the second dopant is no less than 5×1015 atoms/cm3, and the content ... 05/04/06 - 20060091401 - Semiconductor device and method of fabricating the same The semiconductor device fabrication method according the present invention having, forming an interlayer dielectric film containing carbon above a semiconductor substrate, forming a protective film on that portion of the interlayer dielectric film, which is close to the surface and in which the carbon concentration is low, forming a trench ... 04/27/06 - 20060086939 - Solderable top metal for sic device A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap. ... 04/20/06 - 20060081856 - Novel wide bandgap material and method of making A wide bandgap semiconductor material comprised of Silicon carbide containing a predetermined portion of germanium. ... 04/06/06 - 20060071217 - Semiconductor device A semiconductor device includes a vertical field-effect transistor having a substrate of first conduction type in a substrate base, a drain electrode formed on a first surface of the substrate, an epitaxial layer of first conduction type formed on a second surface of the substrate, a source region of first ... 03/30/06 - 20060065899 - Semiconductor device A semiconductor device includes an SiC substrate, a normal direction of the substrate surface being off from a <0001> or <000-1> direction in an off direction, an SiC layer formed on the SiC substrate, a junction forming region formed in a substantially central portion of the SiC layer, a junction ... 03/23/06 - 20060060864 - All diamond self-aligned thin film transistor A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically conductive diamond layer. An electrically insulating diamond layer is in contact with the electrically conductive diamond layer, and a gate contact is ... 03/23/06 - 20060060863 - System and method for controlling nanostructure growth Systems and methods are provided for controllably growing nanostructures, such as nanotubes, on a substrate, thus enabling the length and/or orientation of the nanostructures to be selectively controlled. A substrate's surface is selectively patterned to include topological structures, such as a blocking structure protruding from the surface and/or a recess ... 03/16/06 - 20060054895 - Multiple floating guard ring edge termination for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same Edge termination for silicon carbide devices has a plurality of concentric floating guard rings in a silicon carbide layer that are adjacent and spaced apart from a silicon carbide-based semiconductor junction. An insulating layer, such as an oxide, is provided on the floating guard rings and a silicon carbide surface ... 03/02/06 - 20060043379 - Sic metal semiconductor field-effect transistors and methods for producing same A silicon carbide metal semiconductor field-effect transistor includes a bi-layer silicon carbide buffer for improving electron confinement in the channel region and/or a layer disposed over at least the channel region of the transistor for suppressing surface effects caused by dangling bonds and interface states. Also, a sloped MESA fabrication ... 02/23/06 - 20060038182 - Stretchable semiconductor elements and stretchable electrical circuits The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. ... 02/16/06 - 20060033111 - Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices A silicon carbide structure is disclosed that is suitable for use as a substrate in the manufacture of electronic devices such as light emitting diodes. The structure includes a silicon carbide wafer having a first and second surface and having a predetermined conductivity type and an initial carrier concentration; a ... 01/26/06 - 20060017056 - Field plate trench transistor A field plate trench transistor (20-60) has a semiconductor body (3) which contains a plurality of trenches (9) which are isolated from one another by mesa regions. The trenches (9) contain gate electrodes (11) for controlling a vertical flow of current through the semiconductor body (3). At least one portion ... 01/26/06 - 20060017055 - Method for manufacturing a display device with low temperature diamond coatings A display device with multiple low temperature diamond coatings, including a substrate as a base; an anode layer residing on the diamond substrate for emitting holes; a hole drift layer that includes a doped diamond coating residing on the anode layer; an emissive layer for emitting light and residing on ... 01/19/06 - 20060011924 - Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same A switching element combining a self-aligned, vertical junction field effect transistor with etched-implanted gate and an integrated antiparallel Schottky barrier diode is described. The anode of the diode is connected to the source of the transistor at the device level in order to reduce losses due to stray inductances. The ... 01/19/06 - 20060011923 - Electromagnetic radiation generating semiconductor chip and method for making same An electromagnetic radiation generating semiconductor chip is disclosed. A semiconductor layer sequence suitable for generating electromagnetic radiation is grown on a first main face of a radioparent, electrically conductive growth substrate, for example, a SiC growth substrate. Provided on a second main face of said growth substrate that faces away ... 01/12/06 - 20060006395 - Method for manufacturing aluminum nitride single crystal There is provided a method for manufacturing an aluminum nitride single crystal, the method including the steps of: preparing a raw material composition containing: aluminum oxide and/or an aluminum oxide precursor which is converted into aluminum oxide by heating, and aluminum nitride and/or an aluminum nitride precursor which is converted ... 01/12/06 - 20060006394 - Silicon carbide schottky diodes and fabrication method A semiconductor device and method of formation wherein a disjointed termination layer 102 is formed around a Schottky metal region 110. A SiC substrate 104 is provided, on top of which a SiC blocking layer 108 is disposed. The disjointed termination layer 102 is formed above the SiC blocking layer ... 01/12/06 - 20060006393 - Silicon-rich nickel-silicide ohmic contacts for sic semiconductor devices A method of producing an ohmic contact and a resulting ohmic contact structure are disclosed. The method includes the steps of forming a deposited film of nickel and silicon on a silicon carbide surface at a temperature below which either element will react with silicon carbide and in respective proportions ... 01/05/06 - 20060001029 - Diamond sensor A diamond element is mounted on an insulating base material having a thickness of not more than 3 mm provided with one pair of metal interconnects. In the diamond element, an insulating diamond layer to act as a detection layer is deposited on a substrate, and one pair of interdigitated ... 01/05/06 - 20060001028 - Method for the treatment of a surface of a metal-carbide substrate for use in semiconductor manufacturing processes as well as such a metal-carbide substrate The invention relates to a method for the treatment of a surface of a metal-carbide substrate, said metal-carbide substrate being used in semiconductor manufacturing processes. The invention also relates to a metal-carbide substrate for use in semiconductor manufacturing processes treated with to the method according to the invention. According to ... 12/29/05 - 20050285118 - Switching circuit using multiple common-drain jfets for good heat dissipation capability and small pcb layout area A switching circuit uses multiple common-drain JFETs to serve as the low-side switches of the switching circuit, and each of the low-side JFET is coupled between a high-side switch and a power node. Since a JFET can endure high voltage at both drain side and source side, and has good ... 12/29/05 - 20050285117 - Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates A SiC die with Os and/or W/WC/TiC contacts and metal conductors is encapsulated either alone or on a ceramic substrate using a borosilicate (BSG) glass that is formed at a temperature well below upper device operating temperature limits but serves as a stable protective layer above the operating temperature (over ... 12/22/05 - 20050280005 - Bulk-isolated pn diode and method of forming a bulk-isolated pn diode A technique for making a bulk isolated PN diode. Specifically, a technique is provided for making a voltage clamp with a pair of bulk isolated PN diode. Another embodiment provides for a voltage clamp with a pair of bulk isolated PN diodes in parallel with a pair of MOSFET diode-connected ... 12/22/05 - 20050280004 - Silicon carbide devices with hybrid well regions and methods of fabricating silicon carbide devices with hybrid well regions MOS channel devices and methods of fabricating such devices having a hybrid channel are provided. Exemplary devices include vertical power MOSFETs that include a hybrid well region of silicon carbide and methods of fabricating such devices are provided. The hybrid well region may include an implanted p-type silicon carbide well ... 12/15/05 - 20050274955 - Bi-layer etch stop process for defect reduction and via stress migration improvement A method of forming a film stack in an integrated circuit, said method comprising depositing a layer of silicon carbide adjacent a first layer of dielectric material, depositing a layer of silicon nitride adjacent the layer of silicon carbide, and depositing a second layer of dielectric material adjacent the layer ... 12/08/05 - 20050269574 - Uniform contact A semiconductor device can comprise a contact material in substantially continuous contact with a contact region. In an embodiment the contact region may comprise an alloy comprising a wide band-gap material and a low melting point contact material. A wide band-gap material may comprise silicon carbide and a low melting ... 12/08/05 - 20050269573 - Method and device with durable contact on silicon carbide A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact. ... 11/10/05 - 20050247943 - Methods of forming conductive through-wafer vias The present invention is generally directed to various methods of forming conductive through-wafer vias. In one illustrative embodiment, the method comprises providing a layer of semiconducting material, forming a layer of metal on a first side of the layer of semiconducting material, forming an opening in the layer of semiconducting ... 10/20/05 - 20050230686 - Silicon carbide semiconductor device and method for manufacturing the same A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the ... 10/13/05 - 20050224809 - Transistors having buried p-type layers beneath the source region and methods of fabricating the same The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a source, a drain and a gate. The gate is disposed between the source and the drain and on an n-type conductivity channel layer. A p-type conductivity region is provided ... 10/13/05 - 20050224808 - Silicon carbide semiconductor devices with a regrown contact layer Silicon carbide semiconductor devices having regrown layers and methods of fabricating the same in a self-aligned manner. According to one aspect of the invention, the method includes growing at least one layer of silicon carbide on a substrate, removing the device from a growth chamber to perform at least one ... 10/13/05 - 20050224807 - Low dielectric constant carbon films Diamond and non-diamond composite film may be exposed to oxygen plasma to gasify the non-diamond forms of carbon, leaving porosity in the resulting structure. In some cases, highly desirable dielectric materials may be formed with high dielectric constants and good mechanical strength. ... 10/13/05 - 20050224806 - Electrically resistant diamond-based component The invention relates to an electrical component having a resistance area and contacts electrically connected to the resistance area, the resistance area including electrically conductive diamond. The resistance area can be configured as a resistance layer on top of a substrate while the substrate can be made at least in ... 09/29/05 - 20050211988 - Method for production of a layer of silicon carbide or a nitride of a group iii element on a suitable substrate The invention relates to an intermediate product in the production of optical, electronic or opto-electronic components, comprising a crystalline layer of cubic silicon carbide, or of a nitride of an element of group III, such as AlN, InN or GaN on a monocrystalline substrate. The substrate is made from silicon/germanium, ... 09/22/05 - 20050205873 - Method for making compound semiconductor and method for making semiconductor device In a method for making a compound semiconductor including a substrate and a compound semiconductor layer having a lattice mismatch ratio of 2% or more relative to the substrate, the method includes a first epitaxial growth step of forming a buffer layer on the substrate, the buffer layer having a ... 09/22/05 - 20050205872 - Sequential lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites An epitaxial silicon carbide layer is fabricated by forming first features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The first features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. A first epitaxial ... 09/22/05 - 20050205871 - Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. The epitaxial silicon carbide layer is ... 09/15/05 - 20050199882 - Self-aligned silicon carbide semiconductor devices and methods of making the same A self-aligned silicon carbide power MESFET with improved current stability and a method of making the device are described. The device, which includes raised source and drain regions separated by a gate recess, has improved current stability as a result of reduced surface trapping effects even at low gate biases. ... 09/01/05 - 20050189544 - Methods of forming a high conductivity diamond film and structures formed thereby A method of forming a high thermal conductivity diamond film and its associated structures comprising selectively nucleating a region of a substrate, and forming a diamond film on the substrate such that the diamond film has large grains, which are at least about 20 microns in size. Thus, the larger ... 08/25/05 - 20050184296 - System and method for fabricating diodes This invention is directed to a system and method of fabricating PN and PiN diodes by diffusing an acceptor impurity into a substrate. This invention is particularly advantageous for fabricating SiC diodes having linearly graded, deep pn junctions. One method that this invention uses to achieve its advantages is by ... 08/25/05 - 20050184295 - Oxygen doped sic for cu barrier and etch stop layer in dual damascene fabrication A method of forming a dual damascene structure with improved performance is described. A first etch stop layer comprised of oxygen doped SiC is deposited on a SiC barrier layer to form a composite barrier/etch stop layer on a substrate. The remainder of the damascene stack is formed by sequentially ... 08/25/05 - 20050184294 - End functionalization of carbon nanotubes Carbon nanotubes may be selectively opened and their exposed ends functionalized. Opposite ends of carbon nanotubes may be functionalized in different fashions to facilitate self-assembly and other applications. ... 08/04/05 - 20050167678 - Lighting system Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, ... 08/04/05 - 20050167677 - Image display unit Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, ... 08/04/05 - 20050167676 - Process for producing a semiconductor light-emitting device Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, ... 08/04/05 - 20050167675 - Lighting system Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, ... 07/28/05 - 20050161678 - Methods of producing plane-parallel structures of silicon suboxide, silicon dioxide and/or silicon carbide, plane-parallel structures obtainable by such methods, and the use thereof A product produced in a PVD method is described, which consists of thin plane-parallel structures having a thickness in the range from 20 to 2000 nm and small dimensions in the range below one mm. Production is carried out by condensation of silicon suboxide onto a carrier passing by way ... 07/21/05 - 20050156175 - High quality nitride semiconductor thin film and method for growing the same The present invention relates to a high quality nitride semiconductor thin film and a method for growing the same. According to the present invention, mask material film patterns made of a dielectric or metallic material are formed on a substrate, the mask material film patterns are removed before coalescence is ... 07/07/05 - 20050145852 - Silicon carbide semiconductor device A silicon carbide semiconductor device includes: a semiconductor substrate including first and second gate layers, a channel layer, a source layer, and a trench; a gate wiring having a first portion and a plurality of second portions; and a source wiring having a third portion and a plurality of fourth ... 06/23/05 - 20050133794 - Semiconductor device A semiconductor device includes a heterojunction semiconductor region 9, which forms a heterojunction with a drain region 2. The heterojunction semiconductor region 9 is connected to a source electrode 7, and has a band gap different from a band gap of a semiconductor substrate constituting the drain region 2. It ... 06/16/05 - 20050127373 - Diamond semiconductor device and method for manufacturing the same A diamond semiconductor device includes a substrate made of single crystal diamond; a first diamond layer, placed on the substrate, containing an impurity; a second diamond layer containing the impurity, the second diamond layer being placed on the substrate and spaced from the first diamond layer; and a third diamond ... 06/02/05 - 20050116234 - Minimizing degradation of sic bipolar semiconductor devices A bipolar device has at least one p−type layer of single crystal silicon carbide and at least one n−type layer of single crystal silicon carbide, wherein those portions of those stacking faults that grow under forward operation are segregated from at least one of the interfaces between the active region ... ### FreshPatents.com Support |