FREE patent keyword monitoring and additional FREE benefits. http://images1.freshpatents.com/images/triangleright (1K) REGISTER now for FREE triangleleft (1K)
FreshPatents.com Logo    FreshPatents.com icons
Monitor Keywords Patent Organizer File a Provisional Patent Browse Inventors Browse Industry Browse Agents


Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Specified Wide Band Gap (1.5ev) Semiconductor Material Other Than Gaasp Or Gaalas > Diamond Or Silicon Carbide

Diamond Or Silicon Carbide

Diamond Or Silicon Carbide patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

09/25/14 - 20140284615 - Method for manufacturing a silicon carbide device and a silicon carbide device
A method for manufacturing a silicon carbide device includes providing a silicon carbide wafer and manufacturing a mask layer on top of the silicon carbide wafer. Further, the method includes structuring the mask layer at an edge of a silicon carbide device to be manufactured, so that the mask layer...

09/25/14 - 20140284616 - Self-formation of high-density arrays of nanostructures
A method for forming nanostructures includes bonding a flexible substrate to a crystalline semiconductor layer having a two-dimensional material formed on a side opposite the flexible substrate. The crystalline semiconductor layer is stressed in a first direction to initiate first cracks in the crystalline semiconductor layer. The first cracks are...

09/25/14 - 20140284617 - Semiconductor device
According to embodiments, a semiconductor device includes an insulating substrate, a first electrode plate disposed on the insulating substrate, a second electrode plate disposed on the insulating substrate, a third electrode plate disposed on the insulating substrate, a first semiconductor element disposed on the first electrode plate, a first electrode...

09/25/14 - 20140284618 - Semiconductor device and method of fabricating the same
An aspect of the present embodiment, there is provided a semiconductor device, including a first electrode, a first semiconductor layer having a first conductive type connected to the first electrode, a second semiconductor layer having a second conductive type contacted to the first semiconductor layer, a third semiconductor layer having...

09/25/14 - 20140284619 - Sic epitaxial wafer and semiconductor device
An SiC epitaxial wafer of an embodiment includes, an SiC substrate, and a p-type first SiC epitaxial layer that is formed on the SiC substrate and contains a p-type impurity and an n-type impurity. An element A and an element D being a combination of Al (aluminum), Ga (gallium), or...

09/25/14 - 20140284620 - Semiconductor device
A semiconductor device of an embodiment includes an n-type SiC substrate, an n-type SiC layer formed on the SiC substrate; a p-type first SiC region formed in the surface of the SiC layer and contains a p-type impurity and an n-type impurity, the p-type impurity being an element A, the...

09/25/14 - 20140284621 - Semiconductor device and method of manufacturing the same
A semiconductor device of an embodiment includes an n-type SiC impurity region containing a p-type impurity and an n-type impurity. Where the p-type impurity is an element A and the n-type impurity is an element D, the element A and the element D form a combination of Al (aluminum), Ga...

09/25/14 - 20140284622 - Semiconductor device and method of manufacturing the same
A semiconductor device of an embodiment includes a p-type SiC impurity region containing a p-type impurity and an n-type impurity. Where the p-type impurity is an element A and the n-type impurity is an element D, the element A and the element D form a combination of Al (aluminum), Ga...

09/25/14 - 20140284623 - Semiconductor device and method of manufacturing the same
A semiconductor device of an embodiment includes, an n-type SiC substrate that has first and second faces, and contains a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D being a combination...

09/25/14 - 20140284624 - Semiconductor component, semiconductor module and methods for producing a semiconductor component and a semiconductor module
A semiconductor component includes a semiconductor body having a top side and a bottom side opposite the top side. A top metallization is applied to the top side and a bottom metallization is applied to the bottom side. A moisture barrier completely seals the semiconductor body in cooperation with the...

09/25/14 - 20140284625 - Manufacturing method of semiconductor device and semiconductor device
A manufacturing method of a junction field effect transistor includes the steps of: (a) forming an n+-type source layer on a surface of an n−-type drift layer formed on an n+-type SiC substrate; (b) forming a plurality of shallow trenches disposed at predetermined intervals by etching the surface of the...

09/25/14 - 20140284626 - Enhanced dislocation stress transistor
A device is provided. The device includes a transistor formed on a semiconductor substrate, the transistor having a conduction channel. The device includes at least one edge dislocation formed adjacent to the conduction channel on the semiconductor substrate. The device also includes at least one free surface introduced above the...

09/25/14 - 20140284627 - Wafer and method of fabricating the same
Disclosed is a method of manufacturing a thin film, the method including: growing an epitaxial layer on a surface of a wafer at a growth temperature, wherein the growing of the epitaxial layer comprises controlling a defect present on a surface of the wafer. Also, disclosed is a wafer including:...

09/25/14 - 20140284628 - Wafer and method of fabricating the same
Disclosed is a method of manufacturing a thin film, the method including: growing an epitaxial layer on a surface of a wafer at a growth pressure, wherein the growing of the epitaxial layer comprises controlling a defect present on a surface of the wafer. Also, disclosed is a wafer including:...

09/18/14 - 20140264374 - Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device
A method for manufacturing a silicon carbide substrate for an electrical silicon carbide device includes providing a silicon carbide dispenser wafer including a silicon face and a carbon face and depositing a silicon carbide epitaxial layer on the silicon face. Further, the method includes implanting ions with a predefined energy...

09/18/14 - 20140264375 - Lattice mismatched heterojunction structures and devices made therefrom
Semiconductor heterojunction structures comprising lattice mismatched, single-crystalline semiconductor materials and methods of fabricating the heterojunction structures are provided. The heterojunction structures comprise at least one three-layer junction comprising two layers of single-crystalline semiconductor and a current tunneling layer sandwiched between and separating the two layers of single-crystalline semiconductor material. Also...

09/18/14 - 20140264376 - Power switching module with reduced oscillation and method for manufacturing a power switching module circuit
A power switching module includes a three-terminal power semiconductor device designed for a rated current and a freewheeling unit. The freewheeling unit includes a pn-diode integrated in a first semiconductor material having a first band-gap, and a Schottky-diode integrated in a second semiconductor material having a second band-gap that is...

09/18/14 - 20140264377 - Sol-gel process for the manufacture of high power switches
According to one embodiment, a photoconductive semiconductor switch includes a structure of nanopowder of a high band gap material, where the nanopowder is optically transparent, and where the nanopowder has a physical characteristic of formation from a sol-gel process. According to another embodiment, a method includes mixing a sol-gel precursor...

09/18/14 - 20140264378 - Semiconductor structure
A semiconductor structure has a MOSFET and a substrate to accommodate the MOSFET. The MOSFET has a gate, a source, and a drain in the substrate. A first substrate region surrounding the MOSFET is doped with a stress enhancer, wherein the stress enhancer is configured to generate a tensile stress...

09/18/14 - 20140264379 - Iii-nitride p-channel field effect transistor with hole carriers in the channel
A non-inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a nitrogen-polar III-Nitride first material, a barrier material layer, a two-dimensional hole gas in the barrier layer, and wherein the nitrogen-polar III-Nitride material comprises one or more III-Nitride epitaxial material layers grown in such a manner...

09/18/14 - 20140264380 - Complementary field effect transistors using gallium polar and nitrogen polar iii-nitride material
A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face III-Nitride material, a non-inverted N-channel III-Nitride field effect transistor, epitaxially grown, a first III-Nitride barrier layer, two-dimensional hole gas, second III-Nitride barrier layer, and a two-dimensional...

09/18/14 - 20140264381 - Semiconductor device with self-aligned ohmic contacts
A method of fabricating a semiconductor device includes providing one or more semiconductor layers, providing a gate contact on a first surface of the one or more semiconductor layers, then using the gate contact as a mask to deposit a source contact and a drain contact on the first surface...

09/18/14 - 20140264382 - Silicon carbide semiconductor devices
Methods, systems, and devices are disclosed for thermal processing of silicon carbide semiconductor devices. In one aspect, a method for fabricating a silicon carbide semiconductor device includes forming a thin epitaxial layer of a nitrogen and phosphorous co-doped SiC material on a SiC epitaxial layer formed on a SiC substrate,...

09/18/14 - 20140264383 - Semiconductor device and manufacturing method of the same
A semiconductor device includes a die pad, an SiC chip mounted on the die pad, a porous first sintered Ag layer bonding the die pad and the SiC chip, and a reinforcing resin portion covering a surface of the first sintered Ag layer and formed in a fillet shape. The...

09/18/14 - 20140264384 - Sic substrate with sic epitaxial film
A method of forming an epitaxial SiC film on SiC substrates in a warm wall CVD system, wherein the susceptor is actively heated and the ceiling and sidewall are not actively heated, but are allowed to be indirectly heated by the susceptor. The method includes a first process of reaction...

09/18/14 - 20140264385 - Manufacture of wafers of wide energy gap semiconductor material for the integration of electronic and/or optical and/or optoelectronic devices
A method is provided for fabricating a wafer of semiconductor material intended for use for the integration of electronic and/or optical and/or optoelectronic devices. The method comprises: providing a starting wafer of crystalline silicon (205); on the starting wafer of crystalline silicon, epitaxially growing a buffer layer (210) consisting of...

09/18/14 - 20140264386 - Performance enhancement in pmos and nmos transistors on the basis of silicon/carbon material
A semiconductor device includes a first transistor having first drain and source regions and a first channel region and a second transistor having second drain and source regions and a second channel region. A first silicon/carbon alloy material is embedded in the first drain and source regions, the first silicon/carbon...

09/18/14 - 20140264387 - Fin field effect transistors having a nitride containing spacer to reduce lateral growth of epitaxially deposited semiconductor materials
A fin field effect transistor including a plurality of fin structures on a substrate, and a shared gate structure on a channel portion of the plurality of fin structures. The fin field effect transistor further includes an epitaxial semiconductor material having a first portion between adjacent fin structures in the...

09/11/14 - 20140252373 - Semiconductor device and method for producing the same
A method for producing a semiconductor device is provided. The method includes providing a semiconductor substrate, providing at least one semiconductor device on the substrate, having a back face opposite the semiconductor substrate and a front face towards the semiconductor substrate, providing a contact layer on the back face of...

09/11/14 - 20140252374 - Silicon carbide semiconductor device
A first drift layer has a first surface facing a first electrode and electrically connected to a first electrode, and a second surface opposite to the first surface. The first drift layer has an impurity concentration NA. A relaxation region is provided in a portion of the second surface of...

09/11/14 - 20140252375 - Delamination and crack prevention in iii-nitride wafers
In an exemplary implementation, a method includes growing a III-Nitride body over a group IV substrate in a semiconductor wafer. The method includes forming at least one device layer over the III-Nitride body. The method also includes etching grid array trenches in the III-Nitride body, where the etching of the...

09/11/14 - 20140252376 - Silicon carbide substrate, method for manufacturing same and method for manufacturing silicon carbide semiconductor device
A method for manufacturing a silicon carbide substrate includes the following steps. A silicon carbide single-crystal substrate is prepared. A silicon carbide epitaxial layer is formed in contact with the silicon carbide single-crystal substrate. A silicon layer is formed in contact with a second surface of the silicon carbide epitaxial...

09/11/14 - 20140252377 - Semiconductor device and method of manufacturing thereof
The semiconductor device includes a SiC substrate; an aluminum nitride layer provided on the substrate and having an island-shaped pattern consisting of plural islands: a channel layer provided on the AlN layer and comprising a nitride semiconductor; an electron supplying layer provided on the channel layer and having a band...

09/11/14 - 20140252378 - Semiconductor substrate and semiconductor device
According to one embodiment, a semiconductor substrate includes a substrate and a semiconductor layer. The substrate has a first surface and containing a silicon carbide. The semiconductor layer is provided on the first surface. The semiconductor layer has a thickness of H centimeters in a perpendicular direction to the first...

09/04/14 - 20140246680 - Jfet devices with increased barrier height and methods of making same
Devices for providing transistors with improved operating characteristics are provided. In one example, a system includes a processor and a memory device. A transistor of the processor or the memory device includes a channel in a semiconductor substrate that is undoped or intrinsic. A metal gate is disposed directly on...

09/04/14 - 20140246681 - High current, low switching loss sic power module
A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least...

09/04/14 - 20140246682 - Semiconductor element
In a semiconductor element, a body region of a second conductivity type includes a first body region in contact with a surface of a first silicon carbide semiconductor layer, and a second body region in contact with a bottom surface of the body region of the second conductivity type. The...

08/21/14 - 20140231825 - Diamond gan devices and associated methods
Semiconductor devices and methods of making thereof are provided. In one aspect, for example, a method for making a semiconductor device can include polishing a working surface of a diamond layer to a substantially flat surface, depositing a buffer layer on the working surface of the diamond layer, and depositing...

08/21/14 - 20140231826 - Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the...

08/21/14 - 20140231827 - Semiconductor device and manufacturing method thereof
A method of manufacturing a semiconductor device includes forming an ohmic electrode in a first area on one of main surfaces of a silicon carbide layer, siliciding the ohmic electrode, and forming a Schottky electrode in a second area on the one of the main surfaces of the silicon carbide...

08/21/14 - 20140231828 - Semiconductor device
A semiconductor device includes a first cell and a second cell. Each of the first cell and the second cell includes a first silicon carbide semiconductor layer including a first region and a second region provided in the first region, a second silicon carbide semiconductor layer provided on and in...

08/21/14 - 20140231829 - Semiconductor device
Technology capable of improving reliability of a semiconductor device is provided. In the present invention, a gate pad GPj formed on a front surface of a semiconductor chip CHP1 is disposed so as to be closer to a source lead SL than to other leads (a drain lead DL and...

08/21/14 - 20140231830 - Crystal layered structure and method for manufacturing same, and semiconductor element
Provided is a crystal layered structure having a low dislocation density on the upper surface of a nitride semiconductor layer on a Ga2O3 substrate, and a method for manufacturing the same. In one embodiment, there is provided a crystal layered structure including: a Ga2O3 substrate; a buffer layer comprising an...

08/14/14 - 20140225124 - Power transistor arrangement and package having the same
Various embodiments provide a power transistor arrangement, which may include a carrier including at least a main region, a first terminal region and a second terminal region being electrically isolated from each other; a first power transistor having a control electrode, a first power electrode and a second power electrode,...

08/14/14 - 20140225125 - Composite wafer and a method for manufacturing same
A composite wafer includes a substrate and a SiC-based functional layer. The substrate includes a porous carbon substrate core and an encapsulating layer encapsulating the substrate core. The SiC-based functional layer comprises, at an interface region with the encapsulating layer, at least one of: a carbide and a silicide formed...

08/14/14 - 20140225126 - Semiconductor device, and manufacturing method for same
The present invention is directed to a semiconductor device including a semiconductor chip formed with an SiC-IGBT including an SiC semiconductor layer, a first conductive-type collector region formed such that the collector region is exposed on a second surface of the SiC semiconductor layer, a second conductive-type base region formed...

08/14/14 - 20140225127 - Monocrystalline sic substrate with a non-homogeneous lattice plane course
A method is used for producing an SiC volume monocrystal by sublimation growth. During growth, by sublimation of a powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal grows by...

08/07/14 - 20140217421 - Semiconductor structure and method of manufacturing the same
The present invention provides a semiconductor structure comprising a substrate, a gate stack, a sidewall, a base region, source/drain regions, and a support structure, wherein: the base region is located above the substrate, and is separated from the substrate by the void; said support structure is located on both sides...

08/07/14 - 20140217422 - Field effect silicon carbide transistor
In a SiC-MOSFET power device for which a SiC substrate is used, a laminated insulating film having a charge-trapping characteristic is employed as a gate insulating film of the SiC-DiMOSFET, and charges are injected into the laminated insulating film, thereby suppressing a change in the gate threshold voltage....

08/07/14 - 20140217423 - Semiconductor light-emitting device, method for forming recesses of the same, and light source apparatus using the same
A semiconductor light-emitting device made of a nitride-based semiconductor includes a semiconductor stacked structure having a nonpolar plane or a semipolar plane as a principal plane, and including an active layer for emitting polarized light. The semiconductor light-emitting device includes a striped structure which is provided in a position intersecting...

08/07/14 - 20140217424 - Semiconductor device, electro-optic device, power conversion device, and electronic apparatus
A semiconductor device includes a silicon substrate, a silicon carbide film formed on the silicon substrate, a mask member formed on a surface of the silicon carbide film, and having an opening section, single-crystal silicon carbide films each having grown epitaxially from the silicon carbide film exposed in the opening...