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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Specified Wide Band Gap (1.5ev) Semiconductor Material Other Than Gaasp Or Gaalas

Specified Wide Band Gap (1.5ev) Semiconductor Material Other Than Gaasp Or Gaalas

Specified Wide Band Gap (1.5ev) Semiconductor Material Other Than Gaasp Or Gaalas patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

04/17/14 - 20140103352 - Nitride semiconductor and fabricating method thereof
The present disclosure relates to nitride semiconductor and a fabricating method thereof, and a nitride semiconductor according to an exemplary embodiment of the present disclosure includes a nitride based first and second electrode placed with a distance on a substrate, a nitride based channel layer which connects the first and...

04/17/14 - 20140103353 - Group iii nitride composite substrate and method for manufacturing the same, laminated group iii nitride composite substrate, and group iii nitride semiconductor device and method for manufacturing the same
A group III nitride composite substrate includes a support substrate and a group III nitride film. A ratio st/mt of a standard deviation st of the thickness of the group III nitride film, to a mean value mt of the thickness thereof is 0.001 or more and 0.2 or less,...

04/17/14 - 20140103354 - Nitride semiconductor structure
A nitride semiconductor structure including a silicon substrate, a nucleation layer, a buffer layer and a nitride semiconductor layer is provided. The nucleation layer disposed on the silicon substrate includes a cubic silicon carbon nitride (SiCN) layer. The buffer layer is disposed on the nucleation layer. The nitride semiconductor layer...

04/17/14 - 20140103355 - Semiconductor light emitting element and light emitting device
A semiconductor light emitting element includes: an n-type cladding layer containing n-type impurities (Si); a light emitting layer laminated on the n-type cladding layer; and a semiconductor layer containing a p-type cladding layer containing p-type impurities (Mg) and laminated on the light emitting layer. The light emitting layer has a...

04/17/14 - 20140103356 - Indium gallium nitride light emitting devices
InGaN-based light-emitting devices fabricated on an InGaN template layer are disclosed....

04/17/14 - 20140103357 - Schottky diode structure and method of fabrication
The disclosed technology relates to a device including a diode. In one aspect, the device includes a lower group III metal nitride layer and an upper group III metal nitride layer and a heterojunction formed therebetween, where the heterojunction extends horizontally and is configured to form a two-dimensional electron gas...

04/17/14 - 20140103358 - Composite substrate
An epitaxial-deposition composite substrate, of more than about 50 mm diameter, in which a nitride-compound semiconductor first substrate is bonded together with a second substrate of either identical or different material. The first substrate is ion-implanted, and on its nitrogen-face side is coated with a special film of thickness within...

04/17/14 - 20140103359 - Semiconductor light-emitting device and method for manufacturing same
A semiconductor light emitting device having enhanced luminous efficiency and a manufacturing method thereof are provided. The semiconductor light emitting device includes: an n-type semiconductor layer having at least one pit formed in an upper surface thereof; an active layer formed on the n-type semiconductor layer, a region of the...

04/17/14 - 20140103360 - Semiconductor device
A semiconductor device having: a substrate; a nitride semiconductor layer including a first semiconductor layer made of GaN or InxGa1-xN (0<x≦1) and formed on the substrate and a second semiconductor layer containing Al and formed on the first semiconductor layer; and a protective film formed on the set of nitride...

04/17/14 - 20140103361 - High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution
A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane....

04/17/14 - 20140103362 - Composite substrates, a method of producing the same, a method of producing functional layers made of nitrides of group 13 elements, and functional devices
A composite substrate 10 includes a sapphire body 1A, a seed crystal film 4 composed of gallium nitride crystal and provided on a surface of the sapphire body, and a gallium nitride crystal layer 7 grown on the seed crystal film 4 and having a thickness of 200 μm or...

04/10/14 - 20140097441 - Devices, systems, and methods related to removing parasitic conduction in semiconductor devices
Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial...

04/10/14 - 20140097442 - Nitride semiconductor device
A nitride semiconductor device includes a silicon substrate, a nucleation layer, a first buffer layer, a first type nitride semiconductor layer, a light-emitting layer and a second type nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate. The first buffer layer is disposed on the...

04/10/14 - 20140097443 - Nitride semiconductor device
A nitride semiconductor device includes a silicon substrate, a nucleation layer, a buffer layer, a first type nitride semiconductor stacked layer, a light-emitting layer and a second type nitride semiconductor layer. The nucleation layer is disposed on the silicon substrate. The buffer layer is disposed on the nucleation layer. The...

04/10/14 - 20140097444 - Nitride semiconductor device
A nitride semiconductor device includes a silicon substrate, a nucleation layer, a buffer layer, a first type nitride semiconductor layer, a light-emitting layer and a second type nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate. The buffer layer is disposed on the nucleation layer....

04/10/14 - 20140097445 - Semiconductor device
A transistor SEL is formed by using a compound semiconductor layer (channel layer CNL). The channel layer CNL is formed over a buffer layer BUF. In a first direction where a drain electrode DRE, a gate electrode GE, and a source electrode SOE of the transistor SEL are arranged, at...

04/10/14 - 20140097446 - Gallium nitride devices with gallium nitride alloy intermediate layer
The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in...

04/03/14 - 20140091308 - Self-aligned structures and methods for asymmetric gan transistors & enhancement mode operation
Embodiments include high electron mobility transistors (HEMT). In embodiments, a gate electrode is spaced apart by different distances from a source and drain semiconductor region to provide high breakdown voltage and low on-state resistance. In embodiments, self-alignment techniques are applied to form a dielectric liner in trenches and over an...

04/03/14 - 20140091309 - Predisposed high electron mobility transistor
A predisposed high electron mobility transistor (HEMT) is disclosed. The predisposed HEMT includes a buffer layer, a HEMT channel layer on the buffer layer, a first HEMT barrier layer over the HEMT channel layer, and a HEMT cap layer on the first HEMT barrier layer. The HEMT cap layer has...

04/03/14 - 20140091310 - Semiconductor device using 2-dimensional electron gas and 2-dimensional hole gas and method of manufacturing the semiconductor device
A semiconductor device includes a first compound semiconductor layer on a substrate, first through third electrodes spaced apart from each other on the first compound semiconductor layer, a second compound semiconductor layer on the first compound semiconductor layer between the first through third electrodes, a third compound semiconductor layer on...

04/03/14 - 20140091311 - Nitride semiconductor based power converting device
A nitride semiconductor based power converting device includes a nitride semiconductor based power transistor, and at least one nitride semiconductor based passive device. The passive device and the power transistor respectively include a channel layer including a first nitride semiconductor material, and a channel supply layer on the channel layer...

04/03/14 - 20140091312 - Power switching device and method of manufacturing the same
A power switching device includes a channel forming layer on a substrate which includes a 2-dimensional electron gas (2DEG), and a channel supply layer which corresponds to the 2DEG at the channel forming layer. A cathode is coupled to a first end of the channel supply layer and an anode...

04/03/14 - 20140091313 - Semiconductor apparatus
A semiconductor apparatus includes a substrate; a buffer layer formed on the substrate; a first semiconductor layer formed on the buffer layer; and a second semiconductor layer formed on the first semiconductor layer. Further, the buffer layer is formed of AlGaN and doped with Fe, the buffer layer includes a...

04/03/14 - 20140091314 - Semiconductor apparatus
A semiconductor apparatus includes a buffer layer formed on a substrate; an SLS (Strained Layer Supperlattice) buffer layer formed on the buffer layer; an electron transit layer formed on the SLS buffer layer and formed of a semiconductor material; and an electron supply layer formed on the electron transit layer...

04/03/14 - 20140091315 - Semiconductor device and manufacturing method of semiconductor device
A semiconductor device includes an electron transit layer formed on a substrate; an electron supply layer formed on the electron transit layer; a doping layer formed on the electron supply layer, the doping layer being formed with a nitride semiconductor in which an impurity element to become p-type and C...

04/03/14 - 20140091316 - Semiconductor device and manufacturing method of semiconductor device
A semiconductor device includes a first semiconductor layer formed on a substrate; a second semiconductor layer and a third semiconductor layer formed on the first semiconductor layer; a fourth semiconductor layer formed on the third semiconductor layer; a gate electrode formed on the fourth semiconductor layer; and a source electrode...

04/03/14 - 20140091317 - Method of manufacturing semiconductor crystal substrate, method of manufacturing semiconductor apparatus, semiconductor crystal substrate, and semiconductor apparatus
A method of manufacturing a semiconductor crystal substrate, includes forming a nitride layer by supplying a gas including a nitrogen component to a substrate formed of a material including silicon and nitriding a surface of the substrate; and forming an AlN layer on the nitride layer by supplying the gas...

04/03/14 - 20140091318 - Semiconductor apparatus
A semiconductor apparatus includes: a substrate; a buffer layer formed on the substrate; a strained layer superlattice buffer layer formed on the buffer layer; an electron transit layer formed of a semiconductor material on the strained layer superlattice buffer layer; and an electron supply layer formed of a semiconductor material...

04/03/14 - 20140091319 - Method of manufacturing a semiconductor device and semiconductor device
A method of manufacturing a semiconductor device includes laminating and forming an electron transit layer, an electron supplying layer, an etching stop layer, and a p-type film on a substrate sequentially, the p-type film being formed of a nitride semiconductor material that includes Al doped with an impurity element that...

04/03/14 - 20140091320 - Semiconductor device and method for manufacturing a semiconductor device
A semiconductor device includes a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a third semiconductor layer and a fourth semiconductor layer formed on the second semiconductor layer, a gate electrode formed on the third semiconductor layer, and a source electrode...

04/03/14 - 20140091321 - Semiconductor device, solid-state imaging device, and method of manufacturing semiconductor device
There is provided a semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is...

04/03/14 - 20140091322 - Semiconductor device and method of manufacturing the same
To enhance the reliability of the semiconductor device using a nitride semiconductor. A channel layer is formed over a substrate, a barrier layer is formed over the channel layer, a cap layer is formed over the barrier layer, and a gate electrode is formed over the cap layer. In addition,...

04/03/14 - 20140091323 - Semiconductor epitaxial structure
A semiconductor epitaxial structure is provided. The semiconductor epitaxial structure includes a substrate, a doped semiconductor epitaxial layer, and a carbon nanotube layer. The doped semiconductor epitaxial layer is located on the substrate. The carbon nanotube layer is located between the substrate and the doped semiconductor epitaxial layer. The carbon...

03/27/14 - 20140084296 - Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor wafer
A nitride semiconductor wafer includes a silicon substrate, a stacked multilayer unit, a silicon-containing unit, and an upper layer unit. The silicon substrate has a major surface. The stacked multilayer unit is provided on the major surface. The stacked multilayer unit includes N number of buffer layers. The buffer layers...

03/27/14 - 20140084297 - Group iii nitride wafers and fabrication method and testing method
The invention provides, in one instance, a group III nitride wafer sliced from a group III nitride ingot, polished to remove the surface damage layer and tested with x-ray diffraction. The x-ray incident beam is irradiated at an angle less than 15 degree and diffraction peak intensity is evaluated. The...

03/27/14 - 20140084298 - Nitride compound semiconductor device and manufacturing method thereof
A nitride compound semiconductor device includes: a substrate; a buffer layer formed on the substrate and including a plurality of composite layers each layered of: a first layer formed of a nitride compound semiconductor; and a second layer formed of a nitride compound semiconductor containing aluminum and having a lattice...

03/27/14 - 20140084299 - Vertical microelectronic component and corresponding production method
A vertical microelectronic component includes a semiconductor substrate having a front side and a back side, and a multiplicity of fins formed on the front side. Each fin has a side wall and an upper side and is separated from other fins by trenches. Each fin includes a GaN/AlGaN heterolayer...

03/27/14 - 20140084300 - Semiconductor device
A field effect transistor includes a substrate and a semiconductor layer provided on the substrate, wherein the semiconductor layer includes a lower barrier layer provided on the substrate, Ga-face grown, lattice relaxed, and having a composition In1-zAlzN (0≦z≦1), a channel layer having a composition of: AlxGa1-xN (0≦x≦1) or InyGa1-yN (0≦y≦1)....

03/20/14 - 20140077217 - Semiconductor device
According to one embodiment, a semiconductor device includes a substrate, a first semiconductor region, a second semiconductor region, a first electrode, a first electrode and a conducting section. The substrate includes a conductive region and has a first surface. The first semiconductor region is provided on the first surface side...

03/20/14 - 20140077218 - Group 13 nitride crystal, group 13 nitride crystal substrate, and method of manufacturing group 13 nitride crystal
A group 13 nitride crystal having a hexagonal crystal structure contains at least a nitrogen atom and at least one metal atom selected from a group consisting of B, Al, Ga, In and Tl. Dislocation density of basal plane dislocations in a cross section parallel to a c-axis is 104...

03/20/14 - 20140077219 - Group-iii nitride compound semiconductor light emitting element, manufacturing method therefor and semiconductor light emitting device
A group-III nitride compound semiconductor light emitting element includes a substrate that has a main face on which an concave and convex portion is formed, a group-III nitride compound semiconductor layer that is formed on the main face of the substrate, and a clearance that is formed between the substrate...

03/20/14 - 20140077220 - Nanopyramid sized opto-electronic structure and method for manufacturing of same
Aspects of the invention provide methods and devices. In one embodiment, the invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanopyramids are grown utilizing a CVD based selective...

03/20/14 - 20140077221 - Semiconductor light-emitting device
An embodiment has an emission layer, a first electrode having a reflective metal layer, an insulating layer, first and second conductivity type layers, and a second electrode. The insulating layer is provided on the first electrode and has an opening where a portion of the first electrode is provided. The...

03/20/14 - 20140077222 - Gallium nitride devices with aluminum nitride alloy intermediate layer
The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in...

03/20/14 - 20140077223 - Structure for growth of nitride semiconductor layer, stacked structure, nitride-based semiconductor element, light source, and manufacturing method for same
A structure for growth of a nitride semiconductor layer which is disclosed in this application includes: a sapphire substrate of which growing plane is an m-plane; and a plurality of ridge-shaped nitride semiconductor layers provided on the growing plane of the sapphire substrate, wherein a bottom surface of a recessed...

03/13/14 - 20140070226 - Bondable top metal contacts for gallium nitride power devices
An embodiment of a semiconductor device includes a gallium nitride (GaN) substrate having a first surface and a second surface. The second surface is substantially opposite the first surface, at least one device layer is coupled to the first surface, and a backside metal is coupled to the second surface....

03/13/14 - 20140070227 - Semiconductor light emitting element and method for manufacturing the same
A method for manufacturing a semiconductor light emitting element comprises steps of forming a semiconductor layer composed of a Group III nitride based compound semiconductor on a principal surface of a substrate; forming a transparent conductive metal oxide film on the semiconductor layer; forming an electrode above the transparent conductive...

03/13/14 - 20140070228 - Semiconductor devices having a recessed electrode structure
An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based...

03/06/14 - 20140061658 - High electron mobility transistor and manufacturing method thereof
The present invention discloses an enhanced mode high electron mobility transistor (HEMT) which includes: a P-type gallium nitride (GaN) layer; a barrier layer, which is formed on and connected to the GaN layer; a dielectric layer, which is formed on and connected to the GaN layer, wherein the barrier layer...

03/06/14 - 20140061659 - Gan dual field plate device with single field plate metal
A low leakage current transistor (2) is provided which includes a GaN-containing substrate (11-14) covered by a passivation surface layer (17) in which a T-gate electrode with sidewall extensions (20) is formed and coated with a multi-level passivation layer (30-32) which includes an intermediate etch stop layer (31) which is...

03/06/14 - 20140061660 - Semiconductor light emitting device and manufacturing method thereof
A semiconductor light emitting device includes a supporting substrate, a light emitting layer including a nitride semiconductor, and a nitride multilayer film. The nitride multilayer film includes a first layer including a first nitride semiconductor containing aluminum nitride, a second layer including a second nitride semiconductor containing gallium nitride, and...

03/06/14 - 20140061661 - Sapphire substrate and method for manufacturing the same and nitride semiconductor light emitting element
A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element, wherein the projection is substantially pyramidal-shaped having a pointed top and constituted by a plurality of side surfaces, wherein the side surface...

03/06/14 - 20140061662 - Group iii nitride wafer and its production method
The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer...

03/06/14 - 20140061663 - Semiconductor buffer structure, semiconductor device including the same, and manufacturing method thereof
A semiconductor structure including a first nitride semiconductor layer, a second nitride semiconductor layer, and a third layer between the first nitride semiconductor layer and the second nitride semiconductor layer. The first nitride semiconductor layer has a first gallium composition ratio, the second nitride semiconductor layer has a second gallium...

03/06/14 - 20140061664 - Light emitting device using gan led chip
A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a...

03/06/14 - 20140061665 - Nitride semiconductor wafer
A nitride semiconductor wafer includes a substrate, and a buffer layer formed on the substrate and including an alternating layer of AlxGa1-xN (0≦x≦0.05) and AlyGa1-yN (0<y≦1 and x<y) layers. Only the AlyGa1-yN layer in the alternating layer is doped with an acceptor....

03/06/14 - 20140061666 - Method and apparatus for producing large, single-crystals of aluminum nitride
Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm−2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals....

03/06/14 - 20140061667 - Semiconductor chip, display comprising a plurality of semiconductor chips and methods for the production thereof
An optoelectronic semiconductor chip including a semiconductor body of semiconductor material, an outcoupling face arranged downstream of the semiconductor body in an emission direction and a mirror layer, wherein the semiconductor body includes an active layer that generates radiation, the mirror layer is arranged on the side of the semiconductor...

03/06/14 - 20140061668 - Gan single crystal substrate and method of manufacturing thereof and gan-based semiconductor device and method of manufacturing thereof
A GaN single crystal substrate has a main surface with an area of not less than 10 cm2, the main surface has a plane orientation inclined by not less than 65° and not more than 85° with respect to one of a (0001) plane and a (000-1) plane, and the...