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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Non-single Crystal, Or Recrystallized, Semiconductor Material Forms Part Of Active Junction (including Field-induced Active Junction) > Field Effect Device In Non-single Crystal, Or Recrystallized, Semiconductor Material > In Combination With Device Formed In Single Crystal Semiconductor Material (e.g., Stacked Fets) > Field Effect Transistor In Single Crystal Material, Complementary To That In Non-single Crystal, Or Recrystallized, Material (e.g., Cmos) Field Effect Transistor In Single Crystal Material, Complementary To That In Non-single Crystal, Or Recrystallized, Material (e.g., Cmos)Field Effect Transistor In Single Crystal Material, Complementary To That In Non-single Crystal, Or Recrystallized, Material (e.g., Cmos) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/17/08 - 20080012019 - Method and structure for forming self-aligned, dual stress liner for cmos devices A method for forming a self-aligned, dual stress liner for a CMOS device includes forming a first type stress layer over a first polarity type device and a second polarity type device, and forming a sacrificial layer over the first type nitride layer. Portions of the first type stress layer ... 01/17/08 - 20080012018 - Strained mos device and methods for its fabrication An MOS device having enhanced mobility and a method for its fabrication are provided. The method comprises providing a P-type monocrystalline silicon germanium substrate having a first lattice constant and a channel region at the substrate surface, forming a gate insulator layer on the substrate, forming a gate electrode having ... 09/13/07 - 20070210314 - Semiconductor device with stressors and method therefor A method for forming a semiconductor device includes providing a substrate region having a first material and a second material overlying the first material, wherein the first material has a different lattice constant from a lattice constant of the second material. The method further includes etching a first opening on ... 09/06/07 - 20070205414 - Method for forming an improved low power sram contact A method of forming contact openings in a semiconductor device including providing a semiconducting substrate; forming an etch stop layer on said semiconducting substrate; forming a dielectric layer on said etch stop layer; forming a bottom anti-reflective coating (BARC) on said dielectric layer; forming and patterning a mask on said ... 07/19/07 - 20070164287 - Thin film transistor, its manufacture method and display device On an insulating substrate, a first insulating buffer layer, a heat accumulating-light shielding layer having at least a silicon layer on the surface thereof, a second insulating buffer layer and a first silicon layer are laminated in the order recited from the bottom. The lamination structure of the heat accumulating-light ... 03/08/07 - 20070051956 - Thin film transistor A thin film transistor having a substrate, a gate insulating layer, a double-gate structure, a first lightly doped region, and a second lightly doped region. The substrate has a source region and a drain region disposed on its opposite sides, a heavily doped region between source region and drain region, ... 02/15/07 - 20070034878 - Semiconductor device and method for manufacturing the same A memory element is formed by providing an organic compound between a pair of upper and lower electrodes. However, when the electrode is formed over a layer containing an organic compound, a temperature is limited because the layer containing the organic compound can be influenced depending on a temperature for ... 03/30/06 - 20060065896 - Cmos solid-state imaging device and method of manufacturing the same as well as drive method of cmos solid-state imaging device Adjacent pixels 2A and 2B are separated by element isolation portion 82 formed of a diffusion layer 43 and an insulating layer 44 thereon, and the insulating layer 44 of the element isolation portion 82 is formed in a position equal to or shallower than the position 45j of a ... 03/16/06 - 20060054892 - Semiconductor device and method of producing the same A semiconductor device includes a laminated substrate; a removal portion; a cavity; a first semiconductor element; and a second semiconductor element. In the laminated substrate, a bulk layer, an insulating layer, and a semiconductor layer are laminated in this order from a bottom. The laminated substrate includes a first area, ... 03/02/06 - 20060043369 - Cmos device having different amounts of nitrogen in the nmos gate dielectric layers and pmos gate dielectric layers The present invention provides a complementary metal oxide semiconductor (CMOS) device, a method of manufacture therefor, and an integrated circuit including the same. The CMOS device (100), in an exemplary embodiment of the present invention, includes a p-channel metal oxide semiconductor (PMOS) device (120) having a first gate dielectric layer ... 01/19/06 - 20060011919 - Vertical gate device for an image sensor and method of forming the same A CMOS pixel cell having a charge transfer transistor adjacent the photo-conversion device. The transistor has a channel region surrounded by a gate and an upper source/drain region over the channel region. ... 01/05/06 - 20060001026 - Semiconductor device and method of manufacturing the same There is provided a semiconductor device which comprises a first interlayer insulating film (first insulating film) formed over a silicon (semiconductor) substrate, a capacitor formed on the first interlayer insulating film and having a lower electrode, a dielectric film, and an upper electrode, a fourth interlayer insulating film (second insulating ... 12/01/05 - 20050263765 - Thin film transistor and display device, method for manufacturing the same, and television system The present invention provides a technique by which a component forming a display device, such as a wiring can be formed with good adhesion. In the invention, a component forming a thin film transistor, a display device, or the like is formed with a material which is the same as ... 12/01/05 - 20050263764 - Cmos imaging device having an improved fill factor A CMOS imaging device includes a semiconductor substrate having an isolation region and an active region, a plurality of gate electrodes formed on respective predetermined portions of the active region, and a plurality of gate electrode contacts that transmit external signals to each of the plurality of gate electrodes, wherein ... 07/28/05 - 20050161676 - Thin film semiconductor device having arrayed configuration of semiconductor crystals A method for producing a thin film semiconductor device is described. In the method, a thin film layer of non-single-crystalline semiconductor, which is deposited on a base layer of glass, is processed to an island-shaped thin film layer at the time prior to the layer irradiation step. The laser irradiation ... 06/30/05 - 20050139833 - Image sensor with deep well region and method of fabricating the image sensor An imager, an image sensor included in the imager and a method of fabricating the image sensor are provided. The image sensor having a substrate with front and back sides to produce image data, includes a transparent conductive coating arranged on the back side of the substrate, a first well ... 06/30/05 - 20050139832 - Cmos image sensors and methods for fabricating the same CMOS image sensors and methods for fabricating the same are disclosed. A disclosed CMOS image sensor comprises: a semiconductor substrate; a photo diode; a microlens located over the photo diode; and a color filter layer located over the microlens. ... 06/02/05 - 20050116230 - Metal carbide gate structure and method of fabrication A semiconductor device such as a complementary metal oxide semiconductor (CMOS) comprising at least one FET that comprises a gate electrode comprising a metal carbide and method of fabrication are provided. The CMOS comprises dual work function metal gate electrodes whereby the dual work functions are provided by a metal ... ### FreshPatents.com Support |