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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Non-single Crystal, Or Recrystallized, Semiconductor Material Forms Part Of Active Junction (including Field-induced Active Junction) > Field Effect Device In Non-single Crystal, Or Recrystallized, Semiconductor Material > In Combination With Device Formed In Single Crystal Semiconductor Material (e.g., Stacked Fets) > Capacitor Element In Single Crystal Semiconductor (e.g., Dram) Capacitor Element In Single Crystal Semiconductor (e.g., Dram)Capacitor Element In Single Crystal Semiconductor (e.g., Dram) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.08/09/07 - 20070181884 - Integrated circuitry, dynamic random access memory cells, and electronic systems The invention includes semiconductor processing methods in which openings are formed to extend into a semiconductor substrate, and the substrate is then annealed around the openings to form cavities. The substrate is etched to expose the cavities, and the cavities are substantially filled with insulative material. The semiconductor substrate having ... 06/14/07 - 20070131935 - Capacitor and method of manufacturing same A capacitor comprises: a lower electrode formed of a foil made of a polycrystalline metal; an upper conductor layer; and a dielectric layer disposed between the lower electrode and the upper electrode layer. Grain boundaries of the polycrystalline metal appear at the top surface of the lower electrode. The capacitor ... 05/31/07 - 20070120128 - Semiconductor memory device A semiconductor memory device includes a plurality of active regions, and a gate electrode in a fish bone shape arranged on each active region. In each active region, a plurality of source regions and a plurality of drain regions are arranged in a matrix manner. The source regions are commonly ... 05/03/07 - 20070096105 - Methods of fabricating a semiconductor device using angled implantation Methods of fabricating structures, such as memory cell structures by exposing at least one edge portion of an intermediate nitride layer arranged between a polysilicon layer and a tungsten layer and performing an angled implant at the at least one edge portion to form a doped region through the at ... 04/26/07 - 20070090363 - Dram including a vertical surround gate transistor DRAM memory cells having a feature size of less than about 4F2 include vertical surround gate transistors that are configured to reduce any short channel effect on the reduced size memory cells. In addition, the memory cells may advantageously include reduced resistance word line contacts and reduced resistance bit line ... 03/29/07 - 20070069213 - Flexible adjustment of on-die termination values in semiconductor device A termination value for a pin of a semiconductor device is set to a first value if a pin signal has a first logic state at an edge of a control signal, and to a second value if the pin signal has a second logic state at the edge of ... 03/01/07 - 20070045629 - White light led A white light LED (light emitting diode) is disclosed. The white light LED comprises: a bracing frame; at least an UV (or a blue light) chip mounted on the bracing frame; and a flat thin film stacked on the UV chip and formed by mixing a main agent and a ... 11/30/06 - 20060267019 - Capacitor and methods of manufacturing the same In a capacitor having a semiconductor-insulator-metal (SIM) structure, an upper electrode may be formed into a multilayer structure including a polycrystalline semiconductor Group IV material. A dielectric layer may include a metal oxide, and a lower electrode may include a metal-based material. Therefore, a capacitor may have a sufficiently small ... 09/07/06 - 20060197091 - Pyramid-shaped capacitor structure A capacitor structure which has generally pyramidal or stepped profile to prevent or reduce dielectric layer breakdown is disclosed. The capacitor structure includes a first conductive layer, at least one dielectric layer having a first area provided on the first conductive layer and a second conductive layer provided on the ... 09/07/06 - 20060197090 - Pyramid-shaped capacitor structure A capacitor structure which has a generally pyramidal or stepped profile to prevent or reduce dielectric layer breakdown is disclosed. The capacitor structure includes a first conductive layer, at least one dielectric layer having a first area provided on the first conductive layer and a second conductive layer provided on ... 03/02/06 - 20060043368 - Flash cell structures and methods of formation Methods of fabrication and flash memory structures eliminate process steps while increasing capacitive coupling between floating gates and control gates of the memory cells. A thick floating gate is deposited early in the process, and a height and width of the floating gate is controlled with deposition and etching or ... 12/22/05 - 20050280001 - Memory cell using silicon carbide A memory includes an insulating layer; a plurality of spaced-apart semiconductor lines formed on the insulating layer; and a plurality of spaced-apart conductive gate lines formed on the insulating layer. Each of the gate lines is disposed to intersect the plurality of semiconductor lines at a plurality of intersections. The ... ### FreshPatents.com Support |