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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Non-single Crystal, Or Recrystallized, Semiconductor Material Forms Part Of Active Junction (including Field-induced Active Junction) > Field Effect Device In Non-single Crystal, Or Recrystallized, Semiconductor Material > In Combination With Device Formed In Single Crystal Semiconductor Material (e.g., Stacked Fets) In Combination With Device Formed In Single Crystal Semiconductor Material (e.g., Stacked Fets)In Combination With Device Formed In Single Crystal Semiconductor Material (e.g., Stacked Fets) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.08/09/07 - 20070181881 - Display device and manufacturing method of the same A display device according to the present invention comprises an insulating substrate; a switching thin film transistor formed on the insulating substrate for receiving a data voltage has a first semiconductor layer comprising amorphous silicon; a driving thin film transistor formed on the insulating substrate, having a control terminal connected ... 07/26/07 - 20070170433 - Multilevel semiconductor device and method of manufacturing the same A method of fabricating a multilevel semiconductor integrated circuit is provided, comprising: forming on a first active semiconductor structure a first plurality of transistors with respective gate structures disposed on a first substrate and source or drain regions disposed within the first substrate; depositing a first insulation layer on the ... 05/17/07 - 20070108448 - Display device and fabrication method thereof The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an ... 03/15/07 - 20070057259 - Three-terminal switch array, three-terminal switch array device, combined semiconductor device, and image form appartus An array of three-terminal switching elements such as light-emitting thyristors is formed from a thin semiconductor film. A combined semiconductor device may be formed by bonding the thin-film three-terminal switching elements to a major surface or edge surface of an integrated circuit chip including a shift register that shifts data ... 01/11/07 - 20070007532 - Stacked semiconductor device and related method A stacked semiconductor device and a method for manufacturing the stacked semiconductor device are disclosed. The stacked semiconductor device comprises a seed layer doped with first impurities, a multilayer insulation pattern disposed on the seed layer comprising at least two insulation interlayer patterns stacked vertically on the seed layer and ... 01/04/07 - 20070001173 - Semiconductor device structures and methods of forming semiconductor structures A method of patterning a semiconductor film is described. According to an embodiment of the present invention, a hard mask material is formed on a silicon film having a global crystal orientation wherein the semiconductor film has a first crystal plane and second crystal plane, wherein the first crystal plane ... 09/14/06 - 20060202206 - Semiconductor device and method for manufacturing the same An object of the present invention is to provide a semiconductor device which has flexibility and resistance to a physical change such as bending and a method for manufacturing the semiconductor device. A semiconductor device of the present invention includes a plurality of transistors provided over a flexible substrate, each ... 06/29/06 - 20060138425 - Methods of forming semiconductor constructions Thin film transistor based three-dimensional CMOS inverters utilizing a common gate bridged between a PFET device and an NFET device. One or both of the NFET and PFET devices can have an active region extending into both a strained crystalline lattice and a relaxed crystalline lattice. The relaxed crystalline lattice ... 06/15/06 - 20060124935 - Cmos inverter constructions Thin film transistor based three-dimensional CMOS inverters utilizing a common gate bridged between a PFET device and an NFET device. One or both of the NFET and PFET devices can have an active region extending into both a strained crystalline lattice and a relaxed crystalline lattice. The relaxed crystalline lattice ... 02/23/06 - 20060038179 - Method and apparatus for solution processed doping of carbon nanotube A method is provided for doping a carbon nanotube. The method comprises exposing the nanotube to a one-electron oxidant in a solution phase. A method is also provided for forming a carbon nanotube FET device. ... 12/22/05 - 20050280000 - Semiconductor memory device The present invention is a semiconductor memory device having a logic block and a memory block on the same chip. In the memory device, unit memory cells each include at least two transistors, one of which is a write transistor for storing an electric charge into and releasing it from ... 11/17/05 - 20050253143 - Semiconductor memory device using vertical-channel transistors The invention provides a semiconductor memory device comprising a plurality of word lines, a plurality of bit lines, and a plurality of static memory cells each having a first, second, third, fourth, fifth, and sixth transistors. While each of channels of the first, second, third, and fourth transistors are formed ... 10/27/05 - 20050236625 - Vertical thin film transistor A vertical thin-film transistor (V-TFT) is provided along with a method for forming the V-TFT. The method comprises: providing a substrate made from a material such as Si, quartz, glass, or plastic; conformally depositing an insulating layer overlying the substrate; forming a gate, having sidewalls and a thickness, overlying a ... 08/04/05 - 20050167668 - Nonvolatile semiconductor memory and manufacturing method for the same At least either above or below a memory transistor formed on an insulating substrate, a shielding layer which has an area larger than that of the semiconductor layer of the memory transistor and has either an electromagnetic wave shielding effect or a light shielding effect or both of these is ... 07/28/05 - 20050161675 - Close contact type sensor To provide a close contact type sensor promoting a light utilizing efficiency, there is provided a close contact type sensor featured in that in a close contact type sensor having a sensor circuit portion and an irradiation window portion, a plurality of the irradiation windows are arranged and positions and ... ### FreshPatents.com Support |