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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Non-single Crystal, Or Recrystallized, Semiconductor Material Forms Part Of Active Junction (including Field-induced Active Junction) > Field Effect Device In Non-single Crystal, Or Recrystallized, Semiconductor Material Field Effect Device In Non-single Crystal, Or Recrystallized, Semiconductor MaterialField Effect Device In Non-single Crystal, Or Recrystallized, Semiconductor Material patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.12/27/07 - 20070295964 - Semiconductor device and method for preparing the same A semiconductor device and a method for preparing the same that can solve crack of a semiconductor film, capacitance electrodes and the like due to stress when forming a source electrode and a drain electrode in a semiconductor device having a thin film transistor and a holding capacitance with three ... 12/13/07 - 20070284583 - Semiconductor device and method of manufacturing the same A method of manufacturing a semiconductor device, including forming a gate electrode or dummy gate on a fin-type silicon layer, introducing an impurity into the fin-type silicon layer with the gate electrode or dummy gate used as mask so as to form first impurity regions, etching the gate electrode or ... 11/15/07 - 20070262311 - Flat panel display and fabrication method and thereof The method for fabricating a flat panel display includes performing a first crystallization process to re-crystallize an amorphous silicon layer on a glass substrate to make the amorphous silicon layer become a polysilicon layer, forming a patterned absorbing layer to cover an active area pattern of a driving TFT and ... 11/01/07 - 20070252151 - Polysilicon thin film transistor device and method of fabricating the same A polysilicon thin film transistor device includes a gate metal pattern including a gate electrode and a gate line formed on a substrate, the gate metal pattern having a stepped portion, a gate insulating film formed on the gate metal pattern, a polysilicon semiconductor layer formed on the gate insulating ... 11/01/07 - 20070252150 - Light emitting device A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. ... 08/23/07 - 20070194315 - Semiconductor device and fabrication method thereof For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an ... 08/23/07 - 20070194314 - Display device and electronic apparatus having the display device A light-emitting element has a property that a resistance value (internal resistance) changes in accordance with an environmental temperature. It is an object to downsize a monitoring element which corrects an influence of variations in current value of the light-emitting element, which are caused by an environmental temperature change and ... 08/16/07 - 20070187684 - Semiconductor device, cpu, image processing circuit and electronic device, and driving method of semiconductor device The invention provides a semiconductor device which consumes less power in pending. The invention further provides a semiconductor device in which a gate electrode is provided over both sides of a semiconductor thin film which forms a transistor, a logic signal is applied to a first gate electrode, a threshold ... 07/26/07 - 20070170432 - Thin film transistor array substrate and method of fabricating the same A thin film transistor array substrate includes a gate line formed on a substrate, a data line formed on the substrate intersecting with the gate line to define a pixel region, a thin film transistor formed at the intersection of the gate line and the data line, the thin film ... 06/28/07 - 20070145373 - Epitaxial imprinting The present invention provides an epitaxial imprinting process for fabricating a hybrid substrate that includes a bottom semiconductor layer; a continuous buried insulating layer present atop said bottom semiconductor layer; and a top semiconductor layer present on said continuous buried insulating layer, wherein said top semiconductor layer includes separate planar ... 06/28/07 - 20070145372 - Semiconductor device, and electronic apparatus An object of the present invention is to provide a technique for improving characteristics of a TFT and realizing the structure of the TFT optimal for driving conditions of a pixel section and a driving circuit, using a smaller number of photo masks. A semiconductor device has a semiconductor film, ... 06/28/07 - 20070145371 - Thin-film transistor A thin-film transistor, such as a top-gate thin-film transistor, is provided herein. The thin-film transistor has a performance-enhancing layer, such as a performance-enhancing bottom layer, comprising a polymer other than a polyimide. In specific embodiments, the polymer is selected from the group consisting of polysiloxane, polysilsesquioxane, and mixtures thereof. In ... 06/21/07 - 20070138475 - Semiconductor device and manufacturing method thereof The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted, stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, ... 06/14/07 - 20070131934 - Polycrystalline silicon layer, flat panel display using the same, and method of fabricating the same A polycrystalline silicon layer, a flat panel display using the polycrystalline silicon layer, and a method of fabricating the same are provided. The polycrystalline silicon layer is formed by crystallizing a seed region of an amorphous silicon layer using a super grain silicon (SGS) crystallization technique. The crystallinity of the ... 05/31/07 - 20070120127 - Semiconductor device and semiconductor device production system It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed ... 05/17/07 - 20070108447 - Thin film transistor and liquid crystal display The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of ... 05/03/07 - 20070096104 - Semiconductor device having a mis-type fet, and methods for manufacturing the same and forming a metal oxide film [Means for solving Problems] A MIS-type field-effect-transistor (FET) including: a silicon substrate (1); an insulating film (6) formed on the silicon substrate and containing silicon and at least one of nitrogen and oxygen; a metal oxide film formed on the insulating film and containing silicon and hafnium; and a gate ... 04/26/07 - 20070090362 - Thin film transistor, method of manufacturing the same and flat panel display having the thin film transistor A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain ... 04/05/07 - 20070075314 - Low temperature polysilicon thin film transistor display and method of fabricating the same A display comprises a substrate, a polysilicon layer which is crystallized by a solid phase crystallization (SPC) method, a gate dielectric layer made of silicon oxy-nitride (SiON) and formed on the polysilicon layer, and a gate electrode formed on the gate dielectric layer (i.e. SiON). ... 03/01/07 - 20070045628 - Thin film transistor and method for fabricating the same Disclosed are a thin film transistor and a method for fabricating the same. The thin film transistor is capable of a fine current control. The thin film transistor includes a semiconductor layer comprising a channel; a gate electrode overlying the semiconductor layer; a source electrode connected to a first end ... 03/01/07 - 20070045627 - Thin film transistor substrate and method of manufacturing the same A thin film transistor substrate with good process efficiency and a method of manufacturing the same are provided. The thin film transistor substrate includes a first conductive type MOS transistor and a second conductive type MOS transistor. The first conductive type MOS transistor includes a first semiconductor layer formed on ... 02/22/07 - 20070040176 - Semiconductor device A semiconductor device having a display unit, which is small in size, suppresses the defect caused by the mounting of IC chips and the like on the substrate, and operates at a high speed. A semiconductor display unit and other circuit blocks are integrally formed on the substrate having an ... 02/22/07 - 20070040175 - Polysilicon thin film transistor and method of fabricating the same A polysilicon thin film transistor (TFT) may include a substrate, at least one insulating layer, a semiconductor layer, a gate electrode, a source electrode, a drain electrode, and a heat retaining layer formed to contact the semiconductor layer. The heat retaining layer may reduce and/or prevent a reduction in a ... 02/15/07 - 20070034877 - Semiconductor device and semiconductor device producing system An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. More specifically, stripe or rectangular depressions and projections are provided ... 02/15/07 - 20070034876 - Semiconductor device A systemized active matrix display in which a pixel matrix circuit, a driver circuit and a logic circuit are mounted on the same substrate, is formed. A TFT of the present invention has such characteristics as to be able to operate in a wide driving frequency range of 0.05 to ... 02/01/07 - 20070023758 - Semiconductor device and manufacturing method thereof It is an object of the present invention to provide a semiconductor device where, even in a case of stacking a plurality of semiconductor elements provided over a substrate, the stacked semiconductor elements can be electrically connected through the substrate, and a manufacturing method thereof. According to one feature of ... 02/01/07 - 20070023757 - Thin-film transistor, method for manufacturing thin-film transistor, and display using thin-film transistor The present invention provides a thin-film transistor having a higher mobility for electrons or holes, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. Thus, the present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a ... 01/25/07 - 20070018167 - Semiconductor integrated circuit and method of fabricating same A semiconductor integrated circuit comprising thin-film transistors in each of which the second wiring is prevented from breaking at steps. A silicon nitride film is formed on gate electrodes and on gate wiring extending from the gate electrodes. Substantially triangular regions are formed out of an insulator over side surfaces ... 01/18/07 - 20070012924 - Semiconductor device and method for manufacturing same A base layer is formed on an insulating substrate, and a semiconductor layer is formed in localized fashion thereon. A gate insulating film is then formed so as to cover the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film. An impurity is ... 01/18/07 - 20070012923 - Electronic circuit An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second ... 01/18/07 - 20070012922 - Field effect transistor and display using same The present invention provides a field effect transistor that includes a semiconductor layer (15) containing an organic substance, and a first electrode (16), a second electrode (12), and a third electrode (14) that are not in contact with each other at least electrically. The first electrode (16) is arranged above ... 01/11/07 - 20070007531 - Semiconductor device and manufacturing method thereof A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate, a first gate insulating layer, a second gate insulating layer, a first gate electrode, and a second gate electrode. The semiconductor substrate is divided into a first region and a second region. The ... 01/11/07 - 20070007530 - Thin-film transistors with metal source and drain and methods of fabrication A thin-film transistor includes a source and a drain that have each been replaced with a metal by a heat-treatment at a temperature within the range of 250° C. and 500° C. ... 01/04/07 - 20070001172 - Liquid crystal display device and fabrication method thereof A method for fabricating an LCD device includes providing first and second substrates; forming an active layer on the first substrate and forming first and second ohmic contact layers on the active layer; forming a first insulation film on the first substrate; forming a gate electrode on the first substrate; ... 12/21/06 - 20060284181 - Fabricating method for thin film transistor substrate and thin film transistor substrate using the same A thin film transistor substrate and its fabrication method are discussed. According to an embodiment, the fabricating method of a thin film transistor substrate includes forming a gate electrode on a substrate; forming a gate insulating film on the gate electrode, the gate insulating film having a groove in an ... 12/14/06 - 20060278876 - Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, and a heat treatment is carried out to obtain ... 12/14/06 - 20060278875 - Semiconductor device and manufacturing method thereof The present invention provides a TFT including at least one LDD region in a self-alignment manner without forming a sidewall spacer and increasing the number of manufacturing steps. A photomask or a reticle provided with an assist pattern that is formed of a diffraction grating pattern or a semi-transmitting film ... 12/07/06 - 20060273320 - Method of manufacturing semiconductor device According to an aspect of the invention, there is provided a method of manufacturing a semiconductor device including simultaneously supplying a source gas of an oxide insulating film and H2 to a semiconductor substrate when the oxide insulating film is formed on the semiconductor substrate by a CVD method. ... 12/07/06 - 20060273319 - Integrated circuit device and manufacturing method thereof It is an object of the present invention to improve a factor which influences productivity such as variation caused by a characteristic defect of a circuit by thinning or production yield when an integrated circuit device in which a substrate is thinned is manufactured. A stopper layer is formed over ... 12/07/06 - 20060273318 - Displaying device with photocurrent-reducing structure and method of manufacturing the same A displaying device includes a substrate, a gate electrode formed on the substrate, a gate insulating layer, a gate a-Si region covering the gate electrode, a source metal region, a drain metal region, a data-line (DL) metal region, a passivation layer and a conductive layer. The gate a-Si region is ... 11/30/06 - 20060267018 - Thin film circuit A practical operational amplifier circuit is formed using thing film transisters. An operational amplifier circuit is formed by thin film transistors formed on a quartz substrate wherein cumulative distribution of mobilities of the n-channel type thin film transistors becomes 90% or more at 260 cm2/Vs and wherein cumulative distribution of ... 11/30/06 - 20060267017 - Semi-conductor-on-insulator structure, semiconductor devices using the same and method of manufacturing the same Semiconductor-on-insulator (SOI) structures, semiconductor devices using the same and methods of manufacturing the same, and more particularly, to a structure with a single-crystalline (for example, germanium (x-Ge)) layer on an insulating layer, semiconductor devices using the same, and methods of manufacturing the same. The SOI structure may include a single-crystalline ... 11/23/06 - 20060261341 - Semiconductor device and manufacturing method of the same It is an object of the present invention is to provide a technique for forming a dense insulating film of good quality that is applicable to a transistor made on a substrate weak against heat such as a glass and a semiconductor device that can realize high performance and high ... 11/16/06 - 20060255338 - Thin film transistor and the manufacturing method thereof A thin film transistor and a method for manufacturing the same capable of reducing a change in a threshold voltage of the thin film transistor formed on a flexible substrate. The thin film transistor includes: a substrate, the substrate being flexible; a buffer layer having a low dielectric constant from ... 10/26/06 - 20060237725 - Semiconductor devices having thin film transistors and methods of fabricating the same Semiconductor devices having thin film transistors (TFTs) and methods of fabricating the same are provided. The semiconductor devices include a semiconductor substrate and a lower interlayer insulating layer disposed on the semiconductor substrate. A lower semiconductor body disposed on or in the lower interlayer insulating layer. A lower TFT includes ... 10/26/06 - 20060237724 - Thin film transistor and method of forming the same A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a soruce/drain is provided. The gate is disposed over a substrate, wherein the gate comprises at least one layer of aluminum-yttrium alloy nitride. The gate insulating layer is formed over the substrate to cover the ... 10/19/06 - 20060231841 - Silicon carbide semiconductor device A silicon carbide semiconductor device includes a semiconductor element disposed in a semiconductor substrate having a first conductive type silicon carbide layer and a silicon substrate. The device includes: a trench on the silicon carbide layer to reach the silicon substrate; and a conductive layer in the trench between the ... 10/12/06 - 20060226429 - Method and apparatus for directional organic light emitting diodes The directionality of organic light emitting diodes is improved by the introduction of a patterned metal electrode as either the anode or the cathode. ... 09/28/06 - 20060214170 - Versatile system for charge dissipation in the formation of semiconductor device structures The present invention provides a system for dissipating any aberrant charge that may accumulate during the fabrication of a semiconductor device segment (200), obviating overstress or break down damage to a focal device structure (208) that might result from uncontrolled dissipation of the aberrant charge. A substrate (202) has first ... 09/28/06 - 20060214169 - Active matrix display backplane A matrix display driver comprises a flexible substrate, a gate line arranged linearly along one surface of the substrate, a source line arranged perpendicularly to the gate line but on the opposed surface of the substrate, the relative overlap of the gate line and source line defining a display switch, ... 09/21/06 - 20060208258 - Semiconductor device, and method of fabricating the same A multi-layered gate electrode of a crystalline TFT is constructed as a clad structure formed by deposition of a first gate electrode, a second gate electrode and a third gate electrode, to thereby to enhance the thermal resistance of the gate electrode. Additionally, an n-channel TFT is formed by selective ... 09/07/06 - 20060197089 - Semiconductor device and its manufacturing method A semiconductor device and its manufacturing method are disclosed. The nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain having a nitrified gradient layer structure. Different extents of nitrification inside the nitrified gradient layer structure provide protection and buffering to prevent the undercut ... 08/31/06 - 20060192202 - Semiconductor device forming method In thin film transistors (TFTS) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. ... 08/24/06 - 20060186412 - Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, ... 08/17/06 - 20060180815 - Flexible active matrix display backplane and method An active matrix display backplane is formed by annealing a flexible dielectric substrate, and then forming one or more thin-film-transistors (TFTs), one or more pixel electrodes, and an interconnect on a surface of the annealed substrate. The interconnect includes individual, spaced apart electrodes that are electrically coupled to one another. ... 08/03/06 - 20060169981 - Thin film transistor array panel for organic electro luminescent display The light emitting efficiency of an organic electro luminance substance depends on the selected electro luminescent (EL) material. Each color of organic EL substances has a different light emitting efficiency from another color. The current source of a pixel having an EL layer with good light emitting efficiency is shared ... 07/27/06 - 20060163583 - Semiconductor device, liquid crystal device, electronic apparatus, and method of manufacturing semiconductor device A semiconductor device includes: a substrate; a plurality of island-shaped light shielding films formed on the substrate; a first insulating film formed between the plurality of light shielding films; a second insulating film formed on the first insulating film and the plurality of light shielding films; and semiconductor elements each ... 07/27/06 - 20060163582 - Thin film transistor substrate and method for forming metal wire thereof The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring method thereof. Since a thin film transistor substrate of the present invention ... 07/20/06 - 20060157708 - Single crystalline structure, method of forming the same, semiconductor device having the single crystalline structure, and method of manufacturing the semiconductor device A single crystalline structure includes a first insulation interlayer pattern, a first epitaxial layer pattern, a second insulation interlayer pattern, and a second epitaxial layer pattern. The first insulation interlayer pattern includes a contact hole that exposes a single crystalline seed. The first epitaxial layer pattern fills up the contact ... 07/20/06 - 20060157707 - Thin film transistor A thin film transistor, comprising a first N-type LDD (Lightly Doped Drain) and a second N-type LDD, is provided. The two N-type LDDs are formed in a semiconductor layer by tilted implantation with a gate electrode serving as a mask. The two N-type LDDs are adjacent to source/drain regions, respectively. ... 07/20/06 - 20060157706 - Structure and method for manufacturing strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels The present invention provides a strained Si directly on insulator (SSDOI) substrate having multiple crystallographic orientations and a method of forming thereof. Broadly, but in specific terms, the inventive SSDOI substrate includes a substrate; an insulating layer atop the substrate; and a semiconducting layer positioned atop and in direct contact ... 07/06/06 - 20060145158 - Poly-crystalline silicon thin film transistor Provided is a silicon thin film transistor (TFT) including: a substrate; a silicon channel layer formed on the substrate with a source and a drain on both sides thereof; a gate insulating layer formed on the silicon channel layer; and a gate formed on the gate insulating layer, wherein the ... 07/06/06 - 20060145157 - Tft array substrate and fabrication method thereof A TFT array substrate is provided. The TFT array substrate includes a gate electrode connected to a gate line; a source electrode connected to a data line, the data line crossing the gate line to define a pixel region; a drain electrode facing the source electrode with a channel interposed ... 07/06/06 - 20060145156 - Thin film transistor array panel and method manufacturing thereof A thin film transistor array panel according to the present invention includes: an insulating substrate; a gate wire formed on the insulating substrate and including a plurality of gate portions and a gate connection connecting the gate portions; a data wire insulated from the gate wire and intersecting the date ... 06/22/06 - 20060131585 - Thin film transistor array panel A thin film transistor array panel is provided, which includes a substrate; a plurality of semiconductor islands formed on the substrate, the plurality of semiconductor islands including a plurality of first and second extrinsic regions, and a plurality of intrinsic regions; a gate insulating layer covering the semiconductor islands; a ... 06/15/06 - 20060124934 - Thin film transistor, production method and production apparatus therefor A thin film transistor produced through flattening a gate insulating film acquires the high mobility of a carrier, but has a problem of occasionally showing low resistivity, low withstanding voltage, and consequent low reliability. The present invention solves the above described problem and provides a thin film transistor having the ... 06/08/06 - 20060118787 - Electronic device with electrostatic discharge protection Electronic devices with electrostatic discharge protection are provided. The electronic devices can comprise an array substrate with electrostatic discharge (ESD) protection, having a substrate, a plurality of conductive lines overlying the substrate along a first direction and at least one conductive segment overlying the substrate between every two conductive lines, ... 05/25/06 - 20060108585 - Thin film transistors and fabrication methods thereof Thin film transistors and fabrication methods thereof. A gate is formed overlying a portion of a substrate. A gate-insulating layer is formed overlying the gate. A vanadium oxide layer is formed between the gate and the substrate and/or the gate and the gate-insulating layer. A semiconductor layer is formed on ... 05/18/06 - 20060102902 - Thin film transistor array panel A thin film transistor array panel is provided, which includes: a substrate including a plurality of pixel areas; a semiconductor layer formed on the substrate and including a plurality of pairs of first and second semiconductor portions in respective pixel areas; a first insulating layer formed on the semiconductor layer; ... 05/11/06 - 20060097261 - Liquid crystal display device and method of manufacturing the same A liquid crystal display device including first and second active layers over a substrate, a storage line over the second active layer, a first insulating layer over the storage line, a gate electrode on the first insulating layer and corresponding to the first active layer, a second insulating layer over ... 05/11/06 - 20060097260 - Array substrates for use in liquid crystal displays and fabrication methods thereof Array substrates for use in TFT-LCDs and fabrication methods thereof. A transparent conductive layer, a first metal layer, a first insulating layer, a semiconductor layer, a second insulating layer and a sacrificial layer are sequentially formed on a substrate. With a first photomask, a photoresist layer with various thicknesses is ... 05/11/06 - 20060097259 - Thin-film photoelectric converter A thin film photoelectric converter, especially an integrated thin film photoelectric converter having improved photoelectric conversion efficiency is provided by controlling an open-circuit voltage and a fill factor so as not be small in a thin film photoelectric converter including a crystalline silicon photoelectric conversion unit. The thin film photoelectric ... 05/04/06 - 20060091394 - Semiconductor device and method for manufacturing the same A semiconductor device having an island semiconductor film which is a channel formation region and a semiconductor film which is a source or drain region being in contact with a side face of the island semiconductor film, and a method for manufacturing the semiconductor device are disclosed. The manufacturing costs ... 04/27/06 - 20060086936 - Method of forming a transistor having a dual layer dielectric Embodiments of methods, apparatuses, components, and/or systems for forming transistor having a dual layer dielectric are described. ... 03/30/06 - 20060065895 - Image display device An interlayer insulator with a low taper angle is formed as a laminated film in which a silicon nitride film is formed on a silicon oxide film formed on the glass substrate side (field insulator side). Thus, an upper electrode of a cathode formed on the interlayer insulator is prevented ... 03/30/06 - 20060065894 - Thin film transistor array panel and manufacturing method thereof A thin film transistor array panel is provided, which includes a substrate having a display area and driver, a polysilicon layer formed on the substrate and including channel, source, and drain regions, and lightly doped regions disposed between the channel region and the source and drain regions, and having an ... 03/23/06 - 20060060859 - High-density plasma multilayer gate oxide A thin-film transistor (TFT) with a multilayer gate insulator is provided, along with a method for forming the same. The method comprises: forming a channel, first source/drain (S/D) region, and a second S/D region in a Silicon (Si) active layer; using a high-density plasma (HDP) source, growing a first layer ... 03/23/06 - 20060060858 - Thin film transistor array panel and method of manufacturing the same A method of manufacturing a thin film transistor array panel is provided, which includes: forming a semiconductor layer of polysilicon on an insulating substrate; forming a gate insulating layer on the semiconductor layer; forming a gate electrode on the gate insulating layer; forming a source region and a drain region ... 03/23/06 - 20060060857 - Method of forming a solution processed device Embodiments of methods, apparatuses, devices, and/or systems for forming a solution processed device are described. ... 03/23/06 - 20060060856 - High-mobility bulk silicon pfet A field effect transistor and method of fabricating the field effect transistor. The field effect transistor, including: a gate electrode formed on a top surface of a gate dielectric layer, the gate dielectric layer on a top surface of a single-crystal silicon channel region, the single-crystal silicon channel region on ... 03/09/06 - 20060049406 - Power semiconductor and method of fabrication This invention is generally concerned with power semiconductors such as power MOS transistors, insulated gate by bipolar transistors (IGBTs), high voltage diodes and the like, and methods for their fabrication. A power semiconductor, the semiconductor comprising: a power device, said power device having first and second electrical contact regions and ... 03/02/06 - 20060043367 - Semiconductor device and method of fabricating a low temperature poly-silicon layer A method of fabricating a low temperature poly-silicon (LTPS). A plurality of semiconductor heat sinks are formed over a substrate. A buffer layer and an amorphous silicon layer are formed over the substrate and the semiconductor heat sinks. Following that, a laser crystallization process is performed to transform the amorphous ... 02/16/06 - 20060033108 - Transparent double-injection field-effect transistor A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent anode and/or cathode. The transistor may also be formed on a substantially transparent substrate. Electrode contacts ... 02/16/06 - 20060033107 - Thin film transistor and method of fabricating the same The present invention discloses a thin film transistor and a method of fabricating the same. The thin film transistor includes an insulating substrate; and a semiconductor layer, a gate insulating layer, a gate electrode, an interlayer insulator, and a source/drain electrode which are formed on the substrate, wherein the gate ... 02/16/06 - 20060033106 - Thin film transistor and method of fabricating the same A bottom gate thin film transistor and method of fabricating the same are disclosed, in which a channel region is crystallized by a super grain silicon (SGS) crystallization method, including: forming a gate electrode and a gate insulating layer on an insulating substrate; forming an amorphous silicon layer on the ... 02/16/06 - 20060033105 - Thin film transistor, liquid crystal display apparatus, manufacturing method of thin film transistor, and manafacturing method of liquid crystal display apparatus A manufacturing method of a thin film transistor of the present invention includes the steps of (i) forming an electrode formation area in which a source electrode and a drain electrode are formed by applying a droplet of an electrode raw material, (ii) applying the droplet of the electrode raw ... 02/09/06 - 20060027810 - Method for doping semiconductor layer, method for manufacturing thin film semiconductor device, and thin film semiconductor device A low concentration impurity diffusion region is formed with good controllability even in case of using a low heat resistant substrate. When doping a semiconductor layer, after forming the semiconductor layer on the substrate, the amount of the dopant ion adsorbed on a surface of the semiconductor layer is controlled ... 02/09/06 - 20060027809 - Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of ... 01/26/06 - 20060017053 - Semiconductor device and a method of manufacturing the same, integrated circuit, electro-optical device, and electronic apparatus Aspects of the invention provide a method, in a semiconductor device, such as a thin film transistor, a technology capable of preventing or reducing the electric field concentration at the edge section of the semiconductor film to enhance the reliability. The method of manufacturing a semiconductor device according to the ... 01/26/06 - 20060017052 - Method of fabricating semiconductor device and semiconductor fabricated by the same method A semiconductor device and method of fabricating the same are provided. The method includes: depositing a silicon layer containing amorphous silicon on a substrate; partially crystallizing the amorphous silicon by applying an annealing process to the silicon layer under an atmosphere of H2O at a predetermined temperature; forming a polycrystalline ... 01/19/06 - 20060011918 - Flat panel display device and method of manufacturing the same A flat panel display includes a pixel electrode having an opening portion formed on an insulating substrate, a semiconductor layer formed over a surface of the insulating substrate, spaced apart from the pixel electrode, having source and drain regions formed to both end portions thereof, a first insulating layer formed ... 01/19/06 - 20060011917 - Thin film transistor, flat panel display device therewith, and method of manufacturing the thin film transistor A thin film transistor that does not deform or exfoliate due to thermal or mechanical stress, a flat panel display having the same, and a method manufacturing the same, the thin film transistor including a substrate, a patterned buffer layer disposed on the substrate, a patterned active layer disposed on ... 01/12/06 - 20060006388 - Method of manufacturing semiconductor device A grain size of a crystal grain in a crystalline semiconductor film obtained by a thermal crystallization method using a metallic element is reduced. Thus, the number of crystal grains in active regions of a device is made uniform. The thermal crystallization method using a metallic element is performed for ... 01/12/06 - 20060006387 - Semiconductor device and ltps-tft within and method of making the same A thin film transistor (TFT) formed on a substrate includes a polycrystalline film, a gate insulator, a hydrogen-supplying film and a gate electrode. The polycrystalline film is formed on the substrate. Two sides of the polycrystalline film serve as the source and the drain of the semiconductor device, and the ... 01/05/06 - 20060001025 - Semiconductor device and method for fabricating the same A semiconductor device in which a semiconductor layer of a thin film transistor and a first electrode of a capacitor are formed of amorphous silicon and the whole or a part of source/drain regions of the semiconductor layer and the first electrode of the capacitor are crystallized by a metal ... 12/29/05 - 20050285112 - Thin film transistor and method for fabricating the same The present invention provides a thin film transistor in which a semiconductor layer and a gate insulation film of the thin film transistor are formed by depositing a second insulation film on a polycrystalline silicon layer pattern and a first insulation film pattern that were formed by first crystallizing and ... 12/29/05 - 20050285111 - Semiconductor apparatus and manufacturing method thereof A semiconductor apparatus in which a substantially entire channel region being a partial depletion type comprises a semiconductor layer provided on one surface side of a substrate, a channel region having a first electroconductive type provided in the semiconductor layer, a high-concentration diffusion region having a second electroconductive type provided ... 12/29/05 - 20050285110 - Thin film transistor and method of fabricating the same A thin film transistor and method of fabricating the same are provided. In the thin film transistor, a seed or a grain boundary exists in a semiconductor layer pattern but not in a junction region. The method includes forming a semiconductor layer pattern. Forming the semiconductor layer pattern includes: forming ... 12/22/05 - 20050279999 - Thin film transistor, method of fabricating the same, and flat panel display having the same A thin film transistor (TFT), a method of fabricating the TFT, and a flat panel display having the TFT, wherein the TFT includes a substrate; a gate electrode provided on the substrate; a gate insulating layer provided on the gate electrode; a source electrode and a drain electrode provided on ... 12/15/05 - 20050274953 - Organic thin film transistor array panel and manufacturing method thereof A method of manufacturing a thin film transistor array panel is provided, the method includes forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a data line and a drain electrode on the gate insulating layer; forming an organic semiconductor layer on ... 12/15/05 - 20050274952 - Semiconductor device and manufacturing method thereof In the invention, a low concentration impurity region is formed between a channel formation region and a source region or a drain region in a semiconductor layer and covered with a gate electrode layer in a thin film transistor The semiconductor layer is doped obliquely to the surface thereof using ... 12/15/05 - 20050274951 - Mosfet having channel in bulk semiconductor and source/drain on insulator, and method of fabrication A MOSFET device (100) in a mono-crystalline semiconductor material (101) of a first conductivity type, which comprises a source and a drain of the opposite conductivity type, each having regions of polycrystalline semiconductor (110, 120) and respective junctions (112a, 122a) in monocrystalline semiconductor. Localized buried insulator regions (113, 123) are ... 12/08/05 - 20050269571 - Method of forming thin-film transistor devices with electro-static discharge protection A silicon layer is formed on a substrate, and then the silicon layer is patterned, and source regions, drain regions and connectors, all with the same conductivity, are formed. The source regions are connected with the drain regions electrically by the connectors, and short circuits are thus constructed. Then, subsequent ... 12/01/05 - 20050263763 - Methods of forming devices, constructions and systems comprising thyristors The invention includes SOI constructions containing one or more memory cells which include a transistor and a thyristor. In one aspect, a scalable GLTRAM cell provides DRAM-like density and SRAM-like performance. The memory cell includes an access transistor and a gated-lateral thyristor integrally formed above the access transistor. The cathode ... 12/01/05 - 20050263762 - Amorphous silicon thin film transistor-liquid crystal display device and method of manufacturing the same In an amorphous silicon thin film transistor-liquid crystal display device and a method of manufacturing the same, gate patterns including a gate line and a gate electrode are formed on an insulation substrate having a display region and a driving circuit region on which a plurality of shift registers are ... 11/24/05 - 20050258423 - Semiconductor device and electronic device It is an object to provide technique for forming a further minute gate electrode in a semiconductor integrated circuit. According to the present invention, a conductive film is etched while a resist mask is made to recede so as to make a cross section of a gate wiring have a ... 11/10/05 - 20050247940 - Semiconductor device, manufacturing method thereof, and display device A multi-gate structure is used and a width (d1) of a high concentration impurity region sandwiched by two channel forming regions in a channel length direction is set to be shorter than a width (d2) of low concentration impurity regions in the channel length direction. Thus, a resistance of the ... 11/10/05 - 20050247939 - Active matrix organic el display device and manufacturing method thereof An active matrix organic EL display device includes pixels each having an organic EL element (7a) and a pixel circuit (3) including a polysilicon TFT for controlling the organic EL element (7a) arranged adjacently in each of the regions partitioned into a matrix shape by data line (12) and gate ... 11/03/05 - 20050242353 - Method of manufacturing thin film transistor having polycrystalline silicon layer, thin film transistor manufactured using the method and flat panel display comprising the thin film transistor A method for manufacturing a thin film transistor having a more uniform threshold voltage, and a flat panel display device that includes the thin film transistor. The method includes forming an amorphous silicon film on a substrate, removing a silicon oxide layer from a surface of the amorphous silicon film, ... 11/03/05 - 20050242352 - Fabrication method of polycrystalline silicon liquid crystal display device A method for fabricating a polysilicon silicon liquid crystal display device is disclosed in which a contact hole connecting source and drain electrodes to an active layer is formed without a stepped portion. An insulation layer containing a porous silicon nitride layer is formed. Wet etching the contact hole through ... 10/27/05 - 20050236624 - Thin film transistor array substrate for liquid crystal display and method of fabricating the same In a method of fabricating a thin film transistor array substrate, an aluminum-based conductive layer is deposited onto an insulating substrate, and patterned to form a gate line assembly. The gate line assembly includes gate lines, gate electrodes, and gate pads. A gate insulating layer is formed on the substrate ... 10/27/05 - 20050236623 - Semiconductor device An integrated circuit is formed on a flexible substrate by using an amorphous semiconductor thin film, or a polycrystalline or a monocrystalline semiconductor thin film crystallized by laser annealing. A plurality of such flexible integrated circuit boards and mounted on a separate support substrate. This can enhance the mechanical strength ... 10/27/05 - 20050236622 - Electronic device and method of manufacturing the same Provided are an electronic device and a method of manufacturing the same. The device includes a plastic substrate, a transparent thermal conductive layer stacked on the plastic substrate, a polysilicon layer stacked on the thermal conductive layer; and a functional device disposed on the polysilicon layer. The functional device is ... 10/20/05 - 20050230683 - Semiconductor device, method of making the same and liquid crystal display device To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate. A TFT having higher electron mobility can be realized within the predetermined range ... 10/13/05 - 20050224800 - Bulk non-planar transistor having strained enhanced mobility and methods of fabrication A method of a bulk tri-gate transistor having stained enhanced mobility and its method of fabrication. The present invention is a nonplanar transistor having a strained enhanced mobility and its method of fabrication. The transistor has a semiconductor body formed on a semiconductor substrate wherein the semiconductor body has a ... 10/13/05 - 20050224799 - Semiconductor device and method for fabricating the same A semiconductor device provided with a thin-film transistor comprising a polycrystalline semiconductor thin film (2) formed on an insulating substrate (100). The semiconductor device comprises a channel region (80), a source region (91), and a drain region (92), each disposed on both sides of the channel region (80) in the ... 10/06/05 - 20050218407 - Array substrate, liquid crystal display device and method of manufacturing array substrate A gate insulating film is formed on a glass substrate on which a plurality of polysilicon films are formed as islands. A first meal layer formed on the gate insulating film is patterned to form gate electrodes on the gate insulating film facing a polysilicon layer which gives rise to ... 10/06/05 - 20050218406 - High-density plasma oxidation for enhanced gate oxide performance A method is provided for forming a low-temperature vertical gate insulator in a vertical thin-film transistor (V-TFT) fabrication process. The method comprises: forming a gate, having vertical sidewalls and a top surface, overlying a substrate insulation layer; depositing a silicon oxide thin-film gate insulator overlying the gate; plasma oxidizing the ... 10/06/05 - 20050218405 - Non-volatile memory and semiconductor device A non-volatile memory comprising a semiconductor active layer provided on an insulating substrate, an insulating film provided on the. semiconductor active layer, a floating gate electrode provided on the insulating film, an anodic oxidized film obtained by anodic oxidation of the floating gate electrode, and a control gate electrode provided ... 09/29/05 - 20050211983 - Display device and manufacturing method of the same The invention provides a method of manufacture of a display device which can achieve a reduction of the manufacturing process. In the manufacturing method, a semiconductor layer is formed over an upper surface of a substrate. An insulation film is formed over an upper surface of the semiconductor layer. Using ... 09/15/05 - 20050199878 - Thin film transistor, semiconductor device, and method for manufacturing the same A semiconductor element is operated without being affected even when the substrate is largely affected by heat shrink such as a large substrate. Furthermore, a thin film semiconductor circuit and a thin film semiconductor device each having the semiconductor element. Also, a semiconductor element is operated without being affected even ... 09/08/05 - 20050194596 - Increasing carrier mobility in nfet and pfet transistors on a common wafer Enhanced carrier mobility in transistors of differing (e.g. complementary) conductivity types is achieved on a common chip by provision of two or more respective stressed layers, such as etch stop layers, overlying the transistors with stress being wholly or partially relieved in portions of the respective layers, preferably by implantations ... 09/08/05 - 20050194595 - Semiconductor device and method of manufacturing the same A semiconductor device having performance comparable with a MOSFET is provided. An active layer of the semiconductor device is formed by a crystalline silicon film crystallized by using a metal element for promoting crystallization, and further by carrying out a heat treatment in an atmosphere containing a halogen element to ... 08/18/05 - 20050179036 - Semiconductor device and manufacturing method thereof, liquid crystal television system, and el television system It is an object of the present invention to provide a method for manufacturing a semiconductor device that has high driving ability (that is, large W/L) according to a method in which the use efficiency of a material is improved and the throughput and yield are enhanced. The present invention ... 08/11/05 - 20050173706 - Transparent conductive laminate and process of producing the same A transparent conductive laminate having a completely crystallized, transparent conductive layer on a substrate comprising an organic polymer molding, and a process for producing the same. The transparent conductive layer is excellent in transparency and wet heat confidence and is not excessively low in specific resistivity. The transparent conductive laminate ... 08/04/05 - 20050167667 - Semiconductor integrated circuit The absolute value of the threshold voltage of a P-channel TFT is reduced by making its channel length shorter than that of an N-channel TFT by at least 20%, to thereby approximately equalize the threshold voltage absolute values of those TFTs. ... 08/04/05 - 20050167666 - Active matrix substrate, method of manufacturing the same, and display device An active matrix substrate comprises a substrate, a thick-film adhesive pad made of organic resin, provided on the substrate and including, at least at a part of a side face thereof, an inclined region having a first contact angle smaller than 90 degrees to the main face of the substrate, ... 08/04/05 - 20050167665 - Active matrix substrate, method of manufacturing the same, and display device An active matrix substrate comprises a substrate, a thick-film adhesive pad made of organic resin, provided on the substrate and including, at least at a part of a side face thereof, an inclined region having a first contact angle smaller than 90 degrees to the main face of the substrate, ... 08/04/05 - 20050167664 - Thyristor-based sram An integrated circuit structure includes a semiconductor substrate and a horizontal semiconductor fin on top of the semiconductor substrate. An access transistor gate and a thyristor gate are on top of the semiconductor substrate and in contact with the horizontal semiconductor fin. An access transistor is at least a portion ... 07/28/05 - 20050161674 - Semiconductor device and method of manufacturing the same According to the present invention, a pixel TFT (an n-channel TFT) having a considerably low OFF current value and a high ratio of an ON current value to an OFF current value can be realized. In a pixel portion, an electrode having a taper portion with a width of 1 ... 07/14/05 - 20050151134 - Method for isolating silicon germanium dislocation regions in strained-silicon cmos applications A dual gate strained-Si MOSFET with thin SiGe dislocation regions and a method for fabricating the same are provided. The method comprises: forming a first layer of relaxed SiGe overlying a substrate, having a thickness of less than 5000 Å; forming a second layer of relaxed SiGe overlying the substrate ... 07/14/05 - 20050151133 - Soi semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrate In one illustrative embodiment, the method comprises forming a gate electrode above an SOI substrate comprised of a bulk substrate, a buried insulation layer and an active layer, the gate electrode having a protective layer formed thereabove, and forming a plurality of dielectric regions in the bulk substrate after the ... 07/07/05 - 20050145845 - Semiconductor device, annealing method, annealing apparatus and display apparatus The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate. ... 06/30/05 - 20050139831 - Semiconductor integrated circuit In a monolithic active matrix circuit that uses offset-gate TFTs in which the gate electrode is offset from the source and drain regions or TFTs whose gate insulating film is formed by vapor deposition, not only an active matrix circuit but also a drive circuit therefor is formed by using ... 06/30/05 - 20050139830 - Semiconductor thin film decomposing method, decomposed semiconductor thin film, decomposed semiconductor thin film evaluation method, thin film transistor made of decomposed semiconductor thin film, and image display device having circuit constituted of t A surface roughness of a polycrystalline semiconductor film to be formed by a laser annealing method is reduced. A transmittance distribution filter is disposed at the optical system of a laser annealing apparatus. The transmittance distribution filter controls an irradiation light intensity distribution along a scanning direction of a substrate ... 06/23/05 - 20050133790 - Semiconductor integrated circuit, semiconductor device, and manufacturing method of the semiconductor integrated circuit A chip with increased impact resistance, attractive design and reduced cost, and a manufacturing method thereof are provided. A semiconductor integrated circuit is formed on a large glass substrate, and a part of data of a ROM included therein is determined by an ink jet method or a laser cutting ... 06/23/05 - 20050133789 - Semiconductor device having two different operation modes employing an asymmetrical buried insulating layer and method for fabricating the same According to some embodiments, a semiconductor device includes a lower semiconductor substrate, an upper silicon pattern, and a MOS transistor. The MOS transistor includes a body region formed within the upper silicon pattern and source/drain regions separated by the body region. A buried insulating layer is interposed between the lower ... 06/23/05 - 20050133788 - Electronic device and methods for fabricating an electronic device An electronic device and a method of fabricating the electronic device includes forming a first electrical contact, a dielectric layer and a second electrical contact wherein the dielectric layer is located between the first and the second electrical contacts, forming an electrically insulating layer over the dielectric layer and the ... 06/16/05 - 20050127362 - Sectional field effect devices and method of fabrication A field effect device is disclosed which has a body formed of a crystalline semiconductor material and has at least one vertically oriented section and at least one horizontally oriented section. The device is produced in SOI technology by fabricating first a formation of the device in masking insulators, and ... 06/09/05 - 20050121673 - Manufacturing method of thin film transistor substrate This invention provides a manufacturing method for fabricating on the same substrate both high voltage thin film transistors suitable for driving liquid crystal and low voltage drive high performance thin film transistors. In addition, this invention provides a thin film transistor substrate where the area occupied by a storage capacitor ... 06/02/05 - 20050116229 - Semiconductor device and method of manufacturing the same A crystalline semiconductor film in which the position and the size of crystal grains are controlled is provided, and a TFT that can operate at high speed is obtained by forming a channel formation region of the TFT from the crystalline semiconductor film. A heat retaining film is formed on ... 06/02/05 - 20050116228 - Methods of manufacturing thin film transistors using masks to protect the channel regions from impurities while doping a semiconductor layer to form source/drain regions A method of manufacturing a thin film transistor includes forming a semiconductor layer on a substrate; forming a gate insulating layer over the entire surface of the substrate to cover the semiconductor layer; depositing a conductive layer on the gate insulating layer; forming a first photosensitive pattern over the conductive ... 06/02/05 - 20050116227 - Semiconductor device and manufacturing method thereof In the manufacture of a semiconductor device, there are provided a method that enables reduction in the number of manufacturing steps thereof and a structure for realizing the method, to thereby realize improvement in yield and reduction in manufacturing cost. Wirings (source wiring, drain wiring, and the like), which are ... ### FreshPatents.com Support |