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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Non-single Crystal, Or Recrystallized, Semiconductor Material Forms Part Of Active Junction (including Field-induced Active Junction) > Amorphous Semiconductor Material > Field Effect Device In Amorphous Semiconductor Material Field Effect Device In Amorphous Semiconductor MaterialField Effect Device In Amorphous Semiconductor Material patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.10/11/07 - 20070235734 - Semiconductor device and method of manufacturing the same On an SOI substrate, a hydrogen ion implantation section in which distribution of hydrogen ions peaks in a BOX layer (buried oxide film layer), and a single-crystal silicon thin-film transistor are formed. Then this SOI substrate is bonded with an insulating substrate. Subsequently, the SOI substrate is cleaved at the ... 08/23/07 - 20070194311 - Photoelectric transducer and its manufacturing method A photoelectric transducer comprises an electrode (5) on which a semiconductor layer (7) carrying a sensitizing dye is deposited. The semiconductor layer (7) contains semiconductor particles and a binder and has a porosity of 40 to 80%. A method for manufacturing a photoelectric transducer by applying a solution containing semiconductor ... 07/26/07 - 20070170428 - Thin film material and method of manufacturing the same A thin film material and a method of manufacturing the thin film material are obtained with which properties of films formed on a substrate can be improved. A superconducting wire 1 includes a substrate 2, an intermediate thin film layer (intermediate layer 3) formed on the substrate and comprised of ... 06/21/07 - 20070138468 - Semiconductor device and method for producing it Disclosed is a technique of improving the heat resistance of the aluminum gate electrode in bottom-gate-type TFT of which the active layer is made of a crystalline silicon film. A pattern of a laminate of a titanium film 102 and an aluminum film 103 is formed on a glass substrate ... 06/14/07 - 20070131932 - Static electricity preventing assembly for display device and method of manufacturing the same A static electricity preventing assembly for an electronic device, may include a substrate, a buffer layer on the substrate, the buffer layer including a plurality of contact holes exposing respective regions of the substrate, a shorting bar on the buffer layer, pad electrodes on the buffer layer, metal wiring lines ... 04/26/07 - 20070090357 - Thin film transistor, pixel structure and repairing method thereof A pixel structure including a scan line, a gate pattern, a first dielectric layer, a channel layer, a source, a drain, a data line, a second dielectric layer and a pixel electrode is provided. The gate pattern is electrically connected with the scan line and has an opening therein. The ... 03/29/07 - 20070069209 - Transparent thin film transistor (tft) and its method of manufacture A transparent thin film transistor (TFT) and a method of fabricating the same are provided. The transparent TFT includes transparent source and drain electrodes formed of transparent material, a transparent semiconductor activation layer that contacts the source and drain electrodes, that is formed of transparent semiconductor, and in which source ... 02/22/07 - 20070040171 - Organic thin film transistor array panel and method for manufacturing the same An organic thin film transistor array panel includes; a substrate, a data line formed on the substrate, a gate line intersecting the data line and including a gate electrode, a first interlayer insulating layer formed on the gate line and the data line and including a first opening exposing the ... 02/22/07 - 20070040170 - Electronic devices An electronic device including at least first and second transistors integrated together on a substrate and each including an organic semiconductor region, wherein the first and second transistors are either both n-type or both p-type but wherein one of the first and second transistors is a normally-ON transistor and the ... 02/15/07 - 20070034870 - Semiconductor device and method of fabricating the same In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having ... 01/11/07 - 20070007522 - Thin film transistor and method of forming the same A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a source/drain is provided. The gate is disposed over a substrate, wherein the gate comprises at least one molybdenum-niobium alloy nitride layer. The gate insulating layer is formed over the substrate to cover the gate. ... 12/21/06 - 20060284175 - Thin-film semiconductor substrate, method of manufacturing thin-film semiconductor substrate, method of crystallization, apparatus for crystallization, thin-film semiconductor device, and method of manufacturing thin-film semiconductor device A thin-film semiconductor substrate includes an insulative substrate, an amorphous semiconductor thin film that is formed on the insulative substrate, and a plurality of alignment marks that are located on the semiconductor thin film and are indicative of reference positions for crystallization. ... 11/30/06 - 20060267012 - Thin-film transistor and method of fabricating the same A drain (6), a channel (7) and a source (8) are integrally formed on a surface of a second oxide film (4) by polysilicon. The drain (6) is formed to be connected with a pad layer (3) (second polycrystalline semiconductor layer) through a contact hole (5) which is formed to ... 11/30/06 - 20060267011 - Image display device and method for manufacturing the same Only a region where TFTs constituting a high-performance circuit will be disposed in a precursor semiconductor film PCS on an insulating substrate GLS with an insulating layer UCL serving as an undercoat is irradiated with a first energy beam LSR so as to be poly-crystallized while growing crystal grains laterally. ... 09/07/06 - 20060197084 - Organic semiconductor device An organic semiconductor device includes at least p-type and n-type channel organic semiconductor elements. Each organic semiconductor element includes a pair of a source electrode and a drain electrode which are facing each other, an organic semiconductor layer deposited between the source electrode and the drain electrode such that a ... 07/27/06 - 20060163574 - Semiconductor device and manufacturing method thereof By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be ... 07/06/06 - 20060145154 - Tft array substrate and the fabrication method thereof A TFT array substrate is provided. The TFT array substrate includes: a gate electrode connected to a gate line; a source electrode connected to a data line that crosses the gate line and defines a pixel region; a drain electrode facing the source electrode with a channel between; a semiconductor ... 07/06/06 - 20060145153 - Semiconductor device and method of manufacturing the same A semiconductor device having a CMOS structure, wherein, in manufacturing a CMOS circuit, an impurity element which imparts p-type conductivity to the active layer of the p-channel type semiconductor device is added before forming the gate insulating film. Then, by applying thermal oxidation treatment to the active layer, the impurity ... 06/29/06 - 20060138413 - Method of manufacturing semiconductor device Disclosed is a method of manufacturing a semiconductor device, comprising forming a gate electrode on a main surface of a semiconductor substrate via a gate insulating film, laminating sequentially a first insulating film with oxidation resistance and a silicon film on the main surface of the semiconductor substrate on which ... 06/15/06 - 20060124930 - Thin film transistor and method of making the same A thin film transistor is characterized by having an island-in structure having a semiconductor layer with a channel region, a bottom heavily-doped semiconductor layer, and a top heavily-doped semiconductor layer. The bottom heavily-doped semiconductor layer is positioned on two opposite sides of the surface of the semiconductor layer beyond the ... 06/01/06 - 20060113537 - Electronic unit integrated into a flexible polymer body A peel and stick electronic system comprises a silicone body, and at least one electronic unit operatively connected to the silicone body. The electronic system is produce by providing a silicone layer on a substrate, providing a metal layer on the silicone layer, and providing at least one electronic unit ... 06/01/06 - 20060113536 - Display An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous. ... 05/25/06 - 20060108584 - Display device A display device including a first substrate, a first subpixel electrode, a second subpixel electrode corresponding to the first substrate, a second substrate and a common electrode formed on the second substrate is provided. The first subpixel electrode and the second subpixel electrode are formed on the first substrate. The ... 05/11/06 - 20060097254 - Organic thin-film transistor, method of fabricating the same, and flat panel display having the same The present invention relates to an organic thin film transistor (OTFT), a method of fabricating the OTFT, and an organic electroluminescent display that has the OTFTs. The invention prevents surface damage of an organic semiconductor layer and reduces an off-current. The OTFT includes a substrate, a source electrode and a ... 04/06/06 - 20060071210 - Semiconductor device and method of fabricating the same It is an object of the present invention to manufacture a thin film transistor having a required property without complicating steps and devices. It is another object of the present invention to provide a technique for manufacturing a semiconductor device having high reliability and better electrical characteristics with a higher ... 02/23/06 - 20060038174 - Display device provided with semiconductor element and manufacturing method thereof, and electronic device installed with display device provided with semiconductor element According to one feature of the invention, a region of an insulating film surface at least overlapped with a part of a gate electrode or wiring is coated with an organic agent; a fluid in which conductive fine particles are dispersed in an organic solvent is discharged by a droplet ... 12/01/05 - 20050263761 - Thin film transistor, flat panel display having the same and a method of fabricating each A TFT having a dual buffer structure, a method of fabricating the same, and a flat panel display having the TFT, and a method of fabricating the same are provided. The TFT includes a first buffer layer formed of an amorphous silicon layer on a substrate, a second buffer layer ... 10/27/05 - 20050236619 - Cmos-compatible integration of silicon-based optical devices with electronic devices A conventional CMOS fabrication technique is used to integrate the formation of passive optical devices and active electro-optic devices with standard CMOS electrical devices on a common SOI structure. The electrical devices and optical devices share the same surface SOI layer (a relatively thin, single crystal silicon layer), with various ... 10/06/05 - 20050218402 - Thin-film transistor substrate, display device, cad program and transfer method for thin-film transistor substrate where Ca represents a capacitor between each of the semiconductor layer patterns and the metal table, Cb represents a capacitor between each of the semiconductor layer patterns and the gate electrode lines, Ce represents a capacitor between each of the gate electrode lines and the metal table, L represents a ... 07/07/05 - 20050145843 - Thin film transistor and method of manufacturing the same A thin film transistor and a method of manufacturing the same are provided. The thin film transistor includes a substrate; a buffer layer formed on the substrate; a source and a drain spaced apart from each other on the buffer layer; a channel layer formed on the buffer layer to ... 06/23/05 - 20050133787 - Thin film transistor array substrate and fabricating method thereof A thin film transistor array substrate includes: a gate line provided on a substrate; a data line crossing the gate line; and a thin film transistor having a source electrode that is a portion of the data line that crosses the gate line and a drain electrode overlapping the gate ... ### FreshPatents.com Support |