REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Non-single Crystal, Or Recrystallized, Semiconductor Material Forms Part Of Active Junction (including Field-induced Active Junction) > Amorphous Semiconductor Material > Responsive To Nonelectrical External Signals (e.g., Light) Responsive To Nonelectrical External Signals (e.g., Light)Responsive To Nonelectrical External Signals (e.g., Light) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/03/08 - 20080001148 - Semiconductor device and manufacturing method thereof An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According to the present invention, a semiconductor ... 12/06/07 - 20070278486 - Scanning head for optical position-measuring systems A scanning head for an optical position-measuring system includes a receiver grating, formed of photosensitive areas, for the scanning of locally intensity-modulated light of differing wavelengths. The receiver grating is formed from a semiconductor layer stack of a doped p-layer, an intrinsic i-layer and a doped n-layer. The individual photosensitive ... 10/04/07 - 20070228373 - Single-photon generator A single-photon generator includes a single-photon generating device generating a single-photon pulse having a wavelength on the shorter wavelength side than a communication wavelength band, and a single-photon wavelength conversion device performing wavelength conversion of the single-photon pulse into a single-photon pulse of the communication wavelength band, using pump pulse ... 09/27/07 - 20070221921 - Photodiode An optical diode 21 of the present invention comprises a cholesteric liquid crystal (CLC) layer 2 having a selective reflection wavelength band with a left-handed helical structure, and a phase shifter 24 for changing the phase difference between two intrinsic polarized light components of left-handed circularly polarized light having a ... 06/28/07 - 20070145368 - Two-frequency switchover type crystal oscillator The present invention relates to a two-frequency switchover type crystal oscillator in which first and second IC chips and first and second crystal resonators are connected to wiring patterns of a circuit substrate to form first and second oscillation circuits, and the first and second oscillation circuits are selectively operated ... 02/15/07 - 20070034869 - Solid-state imaging device and method for producing the same In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the charge transfer electrode has an alternate arrangement of a first layer electrode comprising ... 09/07/06 - 20060197083 - Optical sensor The present invention aims at providing a photodetector which can detect the incident light intensity with a high speed while having a wide dynamic range for incident light intensity detection. Each photodiode PDm,n generates electric charges Q by an amount corresponding to the intensity of light incident thereon. An electric ... 08/24/06 - 20060186407 - Device for measuring the reflection factor A device for measuring the reflection factor by irradiating a measurement area of a microchip with light, and in which a light receiving part is made to receive light reflected from the measurement area for determination of the reflection factor of the measurement area. The light receiving part is located ... 08/03/06 - 20060169978 - Solid-state image pickup device and method for producing the same A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation ... 06/29/06 - 20060138412 - Cmos image sensor and fabricating method thereof A CMOS image sensor and fabricating method thereof are provided, in which a microlens is additionally formed on a planarizing layer prior to a color filter forming step and by which transmission efficiency of light incident on a photodiode enhances performance of the image sensor. The CMOS image sensor includes ... 06/22/06 - 20060131579 - Semiconductor photodetector, device for multispectrum detection of electromagnetic radiation using such a photodetector and method for using such a device This semiconductor photodetector consists of a diode with at least two heterojunctions comprising two external layers, a first layer with a given kind or type of doping and a second layer with a kind or type of doping opposite to that of the first layer, the bandgap width of these ... 06/15/06 - 20060124929 - Semiconductor substrate for solid-state image pickup device and producing method therefor A semiconductor substrate for forming a pixel area provided surfacially with a plurality of pixels for photoelectric conversion, the semiconductor substrate, including a polysilicon film of a thickness of 0.5-2.0, on a rear surface of the pixel area-bearing surface, and having an oxygen concentration of 1.3-1.5E+18 atom/cm3 (old ASTM). ... 10/20/05 - 20050230681 - Image sensor, camera system comprising the image sensor and method of manufacturing such a device An image sensor (1) having a semiconductor body (2) with a first conductivity type and having a surface (3), the surface being provided with a number of cells (4), a cell comprising a photosensitive element (5) and a reset transistor (6), the reset transistor comprising a source region (7), a ... 07/21/05 - 20050156167 - Substrate for photoelectric conversion device The present invention provides a substrate for photoelectric conversion devices including an undercoating film and a conductive film that are formed sequentially on a glass sheet. Chloride fine particles are present in the undercoating film or at the interface between the undercoating film and the conductive film. Convex portions are ... ### FreshPatents.com Support |