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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Non-single Crystal, Or Recrystallized, Semiconductor Material Forms Part Of Active Junction (including Field-induced Active Junction) > Amorphous Semiconductor Material Amorphous Semiconductor MaterialAmorphous Semiconductor Material patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.11/15/07 - 20070262307 - Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the method A substrate is set at a predetermined temperature in a plasma treatment chamber, then the inside of the plasma treatment chamber is regulated at a reduced pressure containing at least a silicon hydride gas and a hydrogen gas, a high-frequency electric field is applied to form a silicon film of ... 05/04/06 - 20060091386 - Transistor and method for manufacturing the same In a process for manufacturing a thin film transistor having a semiconductor layer constituting source and drain regions and a channel forming region, by the semiconductor layer being made thinner in the source and drain regions than in the channel forming region a structure is realized wherein, at the boundary ... 03/23/06 - 20060060848 - Semiconductor device and method of fabricating a ltps film A semiconductor device and a method of fabricating a low-temperature polysilicon film are provided. An amorphous silicon film is formed over a substrate. An insulating layer and a laser absorption layer are formed over the amorphous silicon film. A photolithographic and etching process is performed to remove portions of the ... 02/23/06 - 20060038173 - Buffer layer for promoting electron mobility and thin film transistor having the same A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal ... 10/27/05 - 20050236618 - Semiconductor device A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor T including a source region, a drain region, a channel region having a predetermined channel length, a first GOLD region having an impurity concentration ... 09/08/05 - 20050194593 - Structure and method for fabricating gan devices utilizing the formation of a compliant substrate High quality epitaxial layers of GaN can be grown overlying large silicon wafers (200) by forming an amorphous layer (210) on the substrate. The amorphous layer dissipates strain and permits the growth of a high quality GaN layer (208). Any lattice mismatch between the GaN layer and the underlying substrate ... ### FreshPatents.com Support |