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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Non-single Crystal, Or Recrystallized, Semiconductor Material Forms Part Of Active Junction (including Field-induced Active Junction) Non-single Crystal, Or Recrystallized, Semiconductor Material Forms Part Of Active Junction (including Field-induced Active Junction)Non-single Crystal, Or Recrystallized, Semiconductor Material Forms Part Of Active Junction (including Field-induced Active Junction) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.06/28/07 - 20070145367 - Three-dimensional integrated circuit structure The preferred embodiments of the present invention provide a three-dimensional (3D) semiconductor structure and a method of forming the same. The 3D semiconductor structure includes a first substrate bonded to a second substrate. The first substrate includes substantially all NMOS devices. The second substrate includes substantially all PMOS devices. The ... 03/22/07 - 20070063197 - Adaptive input-cell circuitry useful in configurable electronic controllers A method for operating an input-cell comprises: receiving a sensor input signal, a digital-bias first control input and a second control input and, using a first resistor network to apply an analog pull-up bias to the sensor input signal when the bias of the first control input is in a ... 03/01/07 - 20070045624 - Method for manufacturing a thin-film transistor A thin-film transistor is formed on a transparent substrate and has a gate electrode film layer and a source and drain regions, and further has an alignment mark made of one and the same constituent material as a constituent material of at least one of the gate electrode film layer ... 11/02/06 - 20060243974 - Thin-film transistor A thin-film transistor (TFT) is described to have a gate layer, an insulating layer, a semiconductor layer, and a source/drain layer formed on a flexible substrate. The source and the drain layers are separated by a channel with a special shape. This does not only increase the aspect ratio of ... 10/26/06 - 20060237719 - Electronic components A method of manufacturing an electronic component comprising at least one n- or p-doped portion, comprising the steps of: co-depositing inorganic semi-conducting nanoparticles and dopant on a substrate, the nanoparticles being a group four element such as silicon or germanium; fusing the nanoparticles by heating to form a continuous layer; ... 10/19/06 - 20060231836 - Surge voltage protection diode and method of forming the same To prevent the destruction of a semiconductor element due to negative resistance, and to reduce the dynamic resistance of a static electricity prevention diode, the ratio of the maximum electric field intensity during an avalanche and the average electric field in a strong electric field region, as well as the ... 09/21/06 - 20060208257 - Method for low-temperature, hetero-epitaxial growth of thin film csi on amorphous and multi-crystalline substrates and c-si devices on amorphous, multi-crystalline, and crystalline substrates A crystalline, highly textured or biaxially textured, foreign (non-silicon) material, which is closely lattice-matched to silicon, is deposited on a glass or other amorphous or multi-crystalline substrate to provide a template for hetero-epitaxial growth of highly ordered crystalline silicon semiconductor layers on such substrates. This process enables crystalline silicon semiconductor ... 08/10/06 - 20060175608 - Relaxation of a strained layer using a molten layer A method for making a crystalline wafer, in which an interface layer is associated with a support substrate. A first layer is associated with the interface layer in a strained state. The interface layer is melted sufficiently to substantially uncouple the first layer from the support substrate to relax the ... 07/27/06 - 20060163573 - Method for preparing ball grid array substrates via use of a laser A method of using a laser to remove surface contamination and oxidation from a ball grid array substrate. The laser etching can be configured to cover the entire substrate or pinpointed to the epoxy molding compound/solder resist (EMC/SR) interfaces. Additionally, a laser can be used to roughen the surface of ... 05/04/06 - 20060091385 - Selectable application of offset to dynamically controlled voltage supply An electronic system. The system comprises a plurality of circuit paths. Each path in the plurality of circuit paths is coupled to receive a system voltage from a voltage supply. The system further comprises a first circuit for providing a first value indicating a potential capability of operational speed of ... 04/20/06 - 20060081843 - Semiconductor article and method for manufacturing the same Method for manufacturing a semiconductor article, in that a silicide layer is applied, an impurity which acts as a dopant in a semiconductor region is introduced into the silicide layer, the silicide layer being located at least partially beneath the monocrystalline semiconductor region adjacent to the silicide layer, so that ... 04/13/06 - 20060076559 - Method of fabricating an epitaxially grown layer A method of forming an epitaxially grown layer, preferably by providing a region of weakness in a support substrate and transferring a nucleation portion to the support substrate by bonding. A remainder portion of the support substrate is detached at the region of weakness and an epitaxial layer is grown ... 03/23/06 - 20060060847 - Silicon-insulator-silicon structure and method for fabricating the same A silicon-insulator-silicon structure with an insulator having a plurality of openings and a method for fabricating the same are provided. The silicon-insulator-silicon structure includes a lower silicon layer; an insulator formed on the lower silicon layer and having a plurality of openings; and an upper silicon layer formed on the ... 03/23/06 - 20060060846 - Thin layer element and associated fabrication process A method is provided for fabricating a thin layer element, in which a layer of a first material supports a pattern of a second material having a thickness of less than 15 nm, including a step of doping by implanting a chemical species over at least a portion of the ... 03/09/06 - 20060049401 - Nitride epitaxial layer structure and method of manufacturing the same Disclosed is a nitride epitaxial layer structure and manufacturing method thereof. The structure includes a substrate, which is used as the basic supporting material, a first immediate layer formed by stacking an appropriate thickness of high temperature aluminum-gallium-indium-nitride (Al1-x-yGaxInyN) on the substrate, a second immediate layer formed by re-crystallizing an ... 12/22/05 - 20050279997 - Methods of selectively forming epitaxial semiconductor layer on single crystalline semiconductor and semiconductor devices fabricated using the same In methods of selectively forming an epitaxial semiconductor layer on a single crystalline semiconductor and semiconductor devices fabricated using the same, a single crystalline epitaxial semiconductor layer and a non-single crystalline epitaxial semiconductor layer are formed on a single crystalline semiconductor and a non-single crystalline semiconductor pattern respectively, using a ... 11/24/05 - 20050258421 - Semiconductor device and manufacture method thereof The problem is to provide a technology to reduce a light leakage current in order to obtain a good display. One kind or plurality kinds of elements chosen from argon, germanium, silicon, helium, neon, krypton, and xenon are implanted in a crystalline semiconductor layer, to distribute crystal defects due to ... 09/08/05 - 20050194592 - Adaptive voltage control for performance and energy optimization A device for adaptively controlling a voltage supplied to circuitry in substantially close proximity to the device, comprising a processing module, a first tracking element coupled to the processing module and producing a first value indicative of a first estimated speed associated with the circuitry, and a second tracking element ... 08/25/05 - 20050184290 - Semiconductor device A metallic element is effectively removed from a semiconductor film crystallized by using the metallic element. The concentration distribution of phosphorous or antimony in the depth direction of at least one of a source and a drain of a TFT semiconductor film has: a region in which the concentration is ... 06/09/05 - 20050121671 - Method for fabricating laminated silicon gate electrode Within a method for forming a silicon layer, there is employed at least one sub-layer formed of a higher crystalline silicon material and at least one sub-layer formed of a lower crystalline silicon material. The lower crystalline silicon material is formed employing a hydrogen treatment of the higher crystalline silicon ... ### FreshPatents.com Support |