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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Thin Active Physical Layer Which Is (1) An Active Potential Well Layer Thin Enough To Establish Discrete Quantum Energy Levels Or (2) An Active Barrier Layer Thin Enough To Permit Quantum Mechanical Tunneling Or (3) An Active Layer Thin Enough To Permit Carrier Transmission With Substantially No Scattering (e.g., Superlattice Quantum Well, Or Ballistic Transport Device) > Tunneling Through Region Of Reduced Conductivity > Josephson JosephsonJosephson patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.12/27/07 - 20070295954 - Method and structure to isolate a qubit from the environment A method (and structure) of coupling a qubit includes locating the qubit near a transmission line approximately at a location corresponding to a node at a predetermined frequency. ... 09/20/07 - 20070215862 - Methods for preparing entangled quantum states Various embodiments of the present invention are directed to methods for generating an entangled state of qubits. In one embodiment of the present invention, a method for preparing an entangled state of qubits comprises providing a probe and N non-interacting qubits, each qubit comprises a linear superposition of two basis ... 04/12/07 - 20070080341 - Systems, methods and apparatus for factoring numbers Systems, methods and apparatus for factoring numbers are provided. The factoring may be accomplished by creating a factor graph, mapping the factor graph onto an analog processor, initializing the analog processor to an initial state, evolving the analog processor to a final state, and receiving an output from the analog ... 02/22/07 - 20070040163 - Electronic component and method of manufacturing the same The invention relates to a surface mount type electronic component mounted on a printed circuit board or hybrid IC (HIC) and a method of manufacturing the same and provides an electronic component which can be formed with a small size and a low height at a low cost and a ... 11/09/06 - 20060249728 - Switching device using superlattice without any dielectric barriers A switching device has an S (Superconductor)-N (Normal Metal)-S superlattice to control the stream of electrons without any dielectric materials. Each layer of said Superconductor has own terminal. The superlattice spacing is selected based on “Dimensional Crossover Effect”. This device can operate at a high frequency without such energy losses ... 02/16/06 - 20060033096 - Method and circuit for reading quantum state A single electron-transistor is used to read out charge states of two coupled qubits formed by two Cooper pair boxes. Detection is made about a gate voltage shift of the peak of the current that flows in the single electron transistor in accordance with the charge states. Since the current ... 01/05/06 - 20060001019 - Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same A storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode including a barrier layer interposed between a conductive plug and an oxidation resistant layer. A layer of titanium silicide is fabricated to lie between the conductive plug and the oxidation resistant layer. ... 08/04/05 - 20050167658 - Non-unitary probabilistic quantum computing circuit and method A quantum circuit performing quantum computation in a quantum computer. A chosen transformation of an initial n-qubit state is probabilistically obtained. The circuit comprises a unitary quantum operator obtained from a non-unitary quantum operator, operating on an n-qubit state and an ancilla state. When operation on the ancilla state provides ... 06/16/05 - 20050127353 - Substrate and method for the formation of continuous magnesium diboride and doped magnesium diboride wires A chemically doped boron coating is applied by chemical vapor deposition to a silicon carbide fiber and the coated fiber then is exposed to magnesium vapor to convert the doped boron to doped magnesium diboride and a resultant superconductor. ... ### FreshPatents.com Support |