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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Thin Active Physical Layer Which Is (1) An Active Potential Well Layer Thin Enough To Establish Discrete Quantum Energy Levels Or (2) An Active Barrier Layer Thin Enough To Permit Quantum Mechanical Tunneling Or (3) An Active Layer Thin Enough To Permit Carrier Transmission With Substantially No Scattering (e.g., Superlattice Quantum Well, Or Ballistic Transport Device) > Tunneling Through Region Of Reduced Conductivity Tunneling Through Region Of Reduced ConductivityTunneling Through Region Of Reduced Conductivity patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.08/23/07 - 20070194300 - Low resistance tunnel junctions in wide band gap materials and method of making same A low resistance tunnel junction that uses a natural polarization dipole associated with dissimilar materials to align a conduction band to a valence band is disclosed. Aligning the conduction band to the valence band of the junction encourages tunneling across the junction. The tunneling is encouraged, because the dipole space ... 04/26/07 - 20070090341 - Group i-vii semiconductor single crystal thin film and process for producing same A CaF2 buffer layer (3) is formed on a CaF2 (111) substrate (2) by an MBE method. Furthermore, a CuCl thin film is grown on the CaF2 buffer layer (3) by the MBE method while irradiating it with an electron beam to form an electro beam irradiation film (1a). Subsequently, ... 12/07/06 - 20060273301 - High speed electron tunneling devices A detector includes a voltage source for providing a bias voltage and first and second non-insulating layers, which are spaced apart such that the bias voltage can be applied therebetween and form an antenna for receiving electromagnetic radiation and directing it to a specific location within the detector. The detector ... 08/31/06 - 20060192196 - Method of increasing efficiency of thermotunnel devices The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted with an insulator layer, preferably aluminum or silicon nitride, disposed between ... 02/02/06 - 20060022190 - Systems and methods for performing quantum computations Apparatus and methods for performing quantum computations are disclosed. Such apparatus and methods may include identifying a first quantum state of a lattice having a system of quasi-particles disposed thereon, moving the quasi-particles within the lattice according to at least one predefined rule, identifying a second quantum state of the ... 11/10/05 - 20050247927 - Assemblies displaying differential negative resistance The invention includes a device displaying differential negative resistance characterized by a current-versus-voltage profile having a peak-to-valley ratio of at least about 9. The invention also includes a semiconductor construction comprising a substrate, and a first layer over the substrate. The first layer comprises Ge and one or more of ... 08/04/05 - 20050167657 - Multi-bit magnetic memory cells A magnetic memory cell includes first and second magneto-resistive devices connected in series. The first and second magneto-resistive devices have sense layers with different coercivities. Magnetic Random Access Memory (MRAM) devices may include arrays of these memory cells. ... 08/04/05 - 20050167656 - Phase-change memory cell and method of fabricating the phase-change memory cell A memory cell and method of fabricating the memory cell includes an insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the first opening, a phase-change ... ### FreshPatents.com Support |