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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Thin Active Physical Layer Which Is (1) An Active Potential Well Layer Thin Enough To Establish Discrete Quantum Energy Levels Or (2) An Active Barrier Layer Thin Enough To Permit Quantum Mechanical Tunneling Or (3) An Active Layer Thin Enough To Permit Carrier Transmission With Substantially No Scattering (e.g., Superlattice Quantum Well, Or Ballistic Transport Device) > Heterojunction > Quantum Well > Superlattice > With Specified Semiconductor Materials

With Specified Semiconductor Materials

With Specified Semiconductor Materials patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

07/31/14 - 20140209862 - Group iii nitride epitaxial substrate and method for manufacturing the same
Provided is a Group III nitride epitaxial substrate that can suppress the occurrence of breakage during a device formation process and a method for manufacturing the same. A Group III nitride epitaxial substrate according to the present invention includes a Si substrate, an initial layer in contact with the Si...

07/03/14 - 20140183450 - Catalyst free synthesis of vertically aligned cnts on sinw arrays
The present invention discloses novel one dimensional, direct nano-heterojunctions of vertically aligned silicon nanowires (SiNW)-carbon nano tube (CNT) arrays with ultra-low turn-on field useful in single electronic devices. The invention further discloses catalyst free chemical vapor deposition (CVD) route for synthesis of one dimensional, direct nano-heterojunctions of vertically aligned SiNW-CNT...

05/29/14 - 20140145147 - Nitride semiconductor structure and method of fabricating same
A nitride semiconductor structure of the present invention is obtained by growing an h- or t-BN thin film (12) and a wurtzite-structure AlxGa1-xN (x>0) thin film (14) as buffer layers and forming a single-crystal wurtzite-structure AlGaInBN thin film (13) thereon. While GaN, AlGaN, AlN, and the like have the wurtzite...

05/15/14 - 20140131659 - Gallium nitride devices with aluminum nitride intermediate layer
The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in...

05/01/14 - 20140117311 - Semiconductor structure having nanocrystalline core and nanocrystalline shell pairing with compositional transition layer
Semiconductor structures having a nanocrystalline core and nanocrystalline shell pairing compositional transition layers are described. In an example, a semiconductor structure includes a nanocrystalline core composed of a first semiconductor material. A nanocrystalline shell composed of a second semiconductor material surrounds the nanocrystalline core. A compositional transition layer is disposed...

03/13/14 - 20140070167 - Solid state cloaking for electrical charge carrier mobility control
An electrical mobility-controlled material includes a solid state host material having a controllable Fermi energy level and electrical charge carriers with a charge carrier mobility. At least one Fermi level energy at which a peak in charge carrier mobility is to occur is prespecified for the host material. A plurality...

02/13/14 - 20140042391 - Semiconductor device and method of manufactoring the same
A semiconductor device includes a first coalescent layer, a second coalescent layer, a nitride stacked structure on the second coalescent layer, and a third layer between the first and second coalescent layers. The first coalescent layer includes a plurality of formations that are partially merged, and the third layer is...

01/02/14 - 20140001439 - Graded aluminum-gallium-nitride and superlattice buffer layer for iii-v nitride layer on silicon substrate
The present disclosure is directed to an integrated circuit and a method for the fabrication of the integrated circuit. The integrated circuit includes a lattice matching structure. The lattice matching structure can include a first buffer region, a second buffer region and a superlattice structure formed from AlxGa1−xN/AlyGa1−yN layer pairs....

07/11/13 - 20130175501 - Pulsed growth of catalyst-free growth of gan nanowires and application in group iii nitride semiconductor bulk material
Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be...

06/06/13 - 20130140525 - Gallium nitride growth method on silicon substrate
A semiconductor structure includes a silicon substrate; more than one bulk layer of group-III/group-V (III-V) compound semiconductor atop the silicon substrate; and each bulk layer of the group III-V compound is separated by an interlayer....

02/21/13 - 20130043459 - Long wavelength infrared superlattice
An embodiment of the present invention improves the fabrication and operational characteristics of a type-II superlattice material. Layers of indium arsenide and gallium antimonide comprise the bulk of the superlattice structure. One or more layers of indium antimonide are added to unit cells of the superlattice to provide a further...

11/01/12 - 20120273759 - Epitaxial substrate for electronic device and method of producing the same
An epitaxial substrate for an electronic device, in which a lateral direction of the substrate is defined as a main current conducting direction and a warp configuration of the epitaxial substrate is adequately controlled, as well as a method of producing the epitaxial substrate. Specifically, the epitaxial substrate for an...

08/16/12 - 20120205625 - (al, in, ga, b)n device structures on a patterned substrate
A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN where 0<x<1 and 0≦y<1, and a nitride based active region having at least one quantum well structure on the nitride interlayer....

07/26/12 - 20120187374 - Semiconductor device
According to example embodiments, a semiconductor device includes a first layer and second layer. The first layer includes a nitride semiconductor doped with a first type dopant. The second layer is below the first layer and includes a high concentration layer. The high concentration layer includes the nitride semiconductor doped...

04/19/12 - 20120091435 - Epitaxial substrate for electronic device and method of producing the same
The epitaxial substrate includes a conductive SiC single crystal substrate, a buffer as an insulating layer on the SiC single crystal substrate, and a main laminate formed by epitaxially growing a plurality of Group III nitride layers on the buffer. Further, the buffer includes at least an initial growth layer...

01/12/12 - 20120007050 - Method of manufacturing a semiconductor device having a group-iii nitride superlattice layer on a silicon substrate
Provided is a semiconductor device containing a silicon single crystal substrate 101, a silicon carbide layer 102 provided on a surface of the substrate, a Group III nitride semiconductor junction layer 103 provided in contact with the silicon carbide layer, and a superlattice-structured layer 104 constituted by Group III nitride...

01/05/12 - 20120001153 - Pulsed growth of catalyst-free growth of gan nanowires and application in group iii nitride semiconductor bulk material
Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be...

11/10/11 - 20110272672 - Long wavelength infrared superlattice
An embodiment of the present invention improves the fabrication and operational characteristics of a type-II superlattice material. Layers of indium arsenide and gallium antimonide comprise the bulk of the superlattice structure. One or more layers of indium antimonide are added to unit cells of the superlattice to provide a further...

11/03/11 - 20110266522 - Semiconductor device
A semiconductor device may reduce a dislocation density and tensile stress by forming a plurality of interlayers between neighboring clad layers. The semiconductor device may include a plurality of clad layers on a substrate and a plurality of interlayers between neighboring clad layers....

09/15/11 - 20110220874 - Inorganic bulk multijunction materials and processes for preparing the same
A nanostructured composite material comprising semiconductor nanocrystals in a crystalline semiconductor matrix. Suitable nanocrystals include silicon, germanium, and silicon-germanium alloys, and lead salts such as PbS, PbSe, and PbTe. Suitable crystalline semiconductor matrix materials include Si and silicon-germanium alloys. A process for making the nanostructured composite materials. Devices comprising nanostructured...

05/05/11 - 20110101307 - Substrate for semiconductor device and method for manufacturing the same
Provided are a semiconductor substrate including an uneven structure disposed on a surface of a substrate, a buffer layer disposed on the uneven structure, the buffer layer having an acicular structure, a compound semiconductor layer disposed on the buffer layer to planarize the uneven structure, and a plurality of voids...

01/06/11 - 20110001127 - Semiconductor material, method of making the same, and semiconductor device
A semiconductor material is provided comprising: a composition graded layer, formed on a Si substrate or an interlayer formed thereon, comprising a composition of AlXGa1-XN graded such that a content ratio of Al in the composition decreases continuously or discontinuously in a crystal growing direction; a superlattice composite layer, formed...

05/13/10 - 20100117061 - Nitride semiconductor device
There is provided a nitride semiconductor device. A nitride semiconductor device according to an aspect of the invention may include: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; an active layer provided between the n-type and p-type nitride semiconductor layers and having quantum well layers and quantum barrier...

11/26/09 - 20090289244 - Semiconductor heterostructure nanowire devices
Nanowire devices comprising core-shell or segmented nanowires are provided. In these nanowire devices, strain can be used as a tool to form metallic portions in nanowires made from compound semiconductor materials, and/or to create nanowires in which embedded quantum dots experience negative hydrostatic pressure or high positive hydrostatic pressure, whereby...

10/15/09 - 20090256136 - Microresonator systems and methods of fabricating the same
Various embodiments of the present invention are related to microresonator systems that can be used as a laser, a modulator, and a photodetector and to methods for fabricating the microresonator systems. In one embodiment, a microdisk comprises: a top layer; a bottom layer; an intermediate layer having at least one...