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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Thin Active Physical Layer Which Is (1) An Active Potential Well Layer Thin Enough To Establish Discrete Quantum Energy Levels Or (2) An Active Barrier Layer Thin Enough To Permit Quantum Mechanical Tunneling Or (3) An Active Layer Thin Enough To Permit Carrier Transmission With Substantially No Scattering (e.g., Superlattice Quantum Well, Or Ballistic Transport Device) > Heterojunction > Quantum Well > Superlattice > Field Effect Device

Field Effect Device

Field Effect Device patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

03/27/14 - 20140084245 - Quantum dot array devices with metal source and drain
Metal quantum dots are incorporated into doped source and drain regions of a MOSFET array to assist in controlling transistor performance by altering the energy gap of the semiconductor crystal. In a first example, the quantum dots are incorporated into ion-doped source and drain regions. In a second example, the...

12/12/13 - 20130328015 - Extreme high mobility cmos logic
A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate....

11/28/13 - 20130313520 - Apparatus and methods for improving parallel conduction in a quantum well device
Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodiments may be described and claimed....

08/15/13 - 20130207078 - Ingan-based double heterostructure field effect transistor and method of forming the same
A double heterojunction field effect transistor (DHFET) includes a substrate, a buffer layer consisting of GaN back-barrier buffer layer formed on the substrate, a channel layer consisting of an InxGa1-xN ternary alloy in one embodiment, and in another embodiment, InGaN/GaN superlattice (SL) formed on the GaN back-barrier buffer layer opposite...

04/04/13 - 20130082240 - High electron mobility transistor and method of manufacturing the same
A high electron mobility transistor (HEMT) includes a substrate, an HEMT stack spaced apart from the substrate, and a pseudo-insulation layer (PIL) disposed between the substrate and the HEMT stack. The PIL layer includes at least two materials having different phases. The PIL layer defines an empty space that is...

11/08/12 - 20120280208 - Quantum dot channel (qdc) quantum dot gate transistors, memories and other devices
This invention describes a field-effect transistor in which the channel is formed in an array of quantum dots. In one embodiment the quantum dots are cladded with a thin layer serving as an energy barrier. The quantum dot channel (QDC) may consist of one or more layers of cladded dots....

10/11/12 - 20120256166 - Deposition of nanoparticles
The invention relates to a process for deposition of elongated nanoparticles from a liquid carrier onto a substrate, and to electronic devices prepared by this process....

08/09/12 - 20120199813 - Extreme high mobility cmos logic
A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate....

06/14/12 - 20120145995 - Nitride-based semiconductor device and method for manufacturing the same
Disclosed herein are a nitride-based semiconductor device and a method for manufacturing the same. The nitride-based semiconductor device includes: a base substrate having a front surface and a rear surface opposite to the front surface; an epitaxial growth film formed on the front surface of the base substrate; a semiconductor...

02/09/12 - 20120032146 - Apparatus and methods for improving parallel conduction in a quantum well device
Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodiments may be described and claimed....

01/12/12 - 20120007049 - Nitride-based semiconductor device and method for manufacturing the same
The present invention provides a nitride-based semiconductor device. The nitride-based semiconductor device includes: a base substrate having a diode structure; an epi-growth film disposed on the base substrate; and an electrode part disposed on the epi-growth film, wherein the diode structure includes: first-type semiconductor layers; and a second-type semiconductor layer...

12/22/11 - 20110309330 - 2-dimensional quantum wire array field effect transistor/power-transistor/switch/photo-cell
Applications for large arrays (>1010 parallel QWs) is a power transistor, for small arrays (single or few parallel QWs) it is non-volatile information-storage e.g. mediated via ferromagnetic/ferroelectric layers and/or nanoparticles, where due to the properties of 1-dimensional quantized conductivity multi-level logic is realized. Through optical gating of this transistor, an...

11/17/11 - 20110278540 - Field-effect transistor
Provided is a field-effect transistor which is capable of suppressing current collapse. An HEMT as the field-effect transistor includes: a first semiconductor layer made of a first nitride semiconductor; and a second semiconductor layer formed on the first semiconductor layer and made of a second nitride semiconductor having a greater...

09/29/11 - 20110233520 - Semiconductor device and method of manufacturing the same
There is provided a semiconductor device including a base substrate; a semiconductor layer formed on the base substrate and having a mesa protrusion including a receiving groove; a source electrode and a drain electrode disposed to be spaced apart from each other on the semiconductor layer, the source electrode having...

10/28/10 - 20100270535 - Electronic device including an electrically polled superlattice and related methods
A method for making an electronic device may include forming a selectively polable superlattice comprising a plurality of stacked groups of layers. Each group of layers of the selectively polable superlattice may include a plurality of stacked semiconductor monolayers defining a semiconductor base portion and at least one non-semiconductor monolayer...

09/30/10 - 20100243989 - Semiconductor device
A semiconductor device includes a substrate, a superlattice buffer layer that is formed on the substrate and is composed of first AlxGa1-xN layers and second AlxGa1-xN layers having an Al composition greater than that of the first AlxGa1-xN layers, the first and second AlxGa1-xN layers being alternately stacked one by...

09/09/10 - 20100224861 - Twin-drain spatial wavefunction switched field-effect transistors
A field-effect transistor is provided and includes source, gate and drain regions, where the gate region controls charge carrier location in the transport channel, the transport channel includes a asymmetric coupled quantum well layer, the asymmetric quantum well layer includes at least two quantum wells separated by a barrier layer...

08/26/10 - 20100213440 - Silicon-quantum-dot semiconductor near-infrared photodetector
A mesoporous silica having adjustable pores is obtained to form a template and thus a three-terminal metal-oxide-semiconductor field-effect transistor (MOSFET) photodetector is obtained. A gate dielectric of a nano-structural silicon-base membrane is used as infrared light absorber in it. Thus, a semiconductor photodetector made of pure silicon having a quantum-dot...

07/22/10 - 20100181551 - Quantum dot transistor
One or more quantum dots are used to control current flow in a transistor. Instead of being disposed in a channel between source and drain, the quantum dot (or dots) are vertically separated from the source and drain by an insulating layer. Current can tunnel between the source/drain electrodes and...

05/27/10 - 20100127241 - Electronic devices with carbon nanotube components
An electronic device has a source electrode, a drain electrode spaced apart from said source electrode, and at least one of a conducting material, dielectric material and a semiconductor material disposed between said source electrode and said drain electrode. At least one of the source electrode, the drain electrode and...

05/06/10 - 20100108987 - Semiconductor device and method of manufacturing the same
A CNT channel layer of a transistor is cut along a direction perpendicular to the channel to form a plurality of CNT patches, which are used to connect between a source and a drain. The arrangement of the CNT channel layer formed of a plurality of CNT patches can increase...

04/22/10 - 20100096619 - electronic devices using carbon nanotubes having vertical structure and the manufacturing method thereof
Provided are an electronic device to which vertical carbon nanotubes (CNTs) are applied and a method of manufacturing the same. The method of manufacturing an electronic device having a vertical CNT includes the steps of: (a) preparing a substrate on which a silicon source is formed; (b) forming a first...

04/15/10 - 20100090197 - Method of manufacturing semiconductor nanowire sensor device and semiconductor nanowire sensor device manufactured according to the method
Provided are a method of manufacturing a semiconductor nanowire sensor device and a semiconductor nanowire sensor device manufactured according to the method. The method includes preparing a first conductive type single crystal semiconductor substrate, forming a line-shaped first conductive type single crystal pattern from the first conductive type single crystal...

04/08/10 - 20100084631 - Phase-controlled field effect transistor device and method for manufacturing thereof
A phase controllable field effect transistor device is described. The device provides first and second scattering sites disposed at either side of a conducting channel region, the conducting region being gated such that on application of an appropriate signal to the gate, energies of the electrons in the channel region...

01/14/10 - 20100006821 - Nanoscale multi-junction quantum dot device and fabrication method thereof
The present invention relates to a method of fabricating a nanoscale multi-junction quantum dot device wherein it can minimize constraints depending on the number or shape of patterns and a line width, and in particular, overcome shortcomings depending on the proximity effect occurring between patterns while employing the advantages of...

08/13/09 - 20090200540 - Metal-oxide-semiconductor device including a multiple-layer energy filter
A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from...

07/09/09 - 20090173934 - Nonvolatile memory and three-state fets using cladded quantum dot gate structure
The present invention discloses use of quantum dot gate FETs as a nonvolatile memory element that can be used in flash memory architecture as well as in a nonvolatile random access memory (NVRAM) configuration that does not require refreshing of data as in dynamic random access memories. Another innovation is...

02/05/09 - 20090032802 - Mosfet device featuring a superlattice barrier layer and method
A method of forming a semiconductor structure comprises forming a channel layer; forming a superlattice barrier layer overlying the channel layer, and forming a gate dielectric overlying the superlattice barrier layer. The superlattice barrier layer includes a plurality of alternating first and second layers of barrier material. In addition, the...