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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Thin Active Physical Layer Which Is (1) An Active Potential Well Layer Thin Enough To Establish Discrete Quantum Energy Levels Or (2) An Active Barrier Layer Thin Enough To Permit Quantum Mechanical Tunneling Or (3) An Active Layer Thin Enough To Permit Carrier Transmission With Substantially No Scattering (e.g., Superlattice Quantum Well, Or Ballistic Transport Device) > Heterojunction > Quantum Well > Superlattice

Superlattice

Superlattice patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

01/02/14 - 20140001437 - Joined nanostructures and methods therefor
Nanostructures are joined using one or more of a variety of materials and approaches. As consistent with various example embodiments, two or more nanostructures are joined at a junction between the nanostructures. The nanostructures may touch or be nearly touching at the junction, and a joining material is deposited and...

12/19/13 - 20130334495 - Superlattice structure, semiconductor device including the same, and method of manufacturing the semiconductor device
A superlattice structure, and a semiconductor device including the same, include a plurality of pairs of layers are in a pattern repeated at least two times, in which a first layer and a second layer constitute a pair, the first layer is formed of AlxInyGa1-x-yN (where 0≦x and y≦1), the...

09/19/13 - 20130240835 - Semiconductor device and receiver
A semiconductor device includes a p-type semiconductor layer, an n-type semiconductor layer, a pn junction portion at which the p-type semiconductor layer and the n-type semiconductor layer are joined to each other, and a multiple quantum barrier structure or a multiple quantum well structure that is provided in at least...

07/11/13 - 20130175499 - Boundary-modulated nanoparticle junctions and a method for manufacture thereof
A method of providing miniaturized size down to nanoscale electronic materials, which may be easily incorporated into the future ever-scaling down power electronics, microelectronics and nanoelectronics device systems, is disclosed. A linear or nonlinear nanoparticle (nanowire) junction design that allows precise controllability over an electronic device (e.g., a varistor) performance,...

02/28/13 - 20130048947 - Methods to fabricate vertically oriented anatase nanowire arrays on transparent conductive substrates and applications thereof
The present invention relates to growth of vertically-oriented crystalline nanowire arrays upon a transparent conductive or other substrate for use in 3rd generation photovoltaic and other applications. A method of growing crystalline anatase nanowires includes the steps of: deposition of titania onto a substrate; conversion of the titania into titanate...

01/10/13 - 20130009132 - Low thermal conductivity material
Embodiments of a material having low cross-plane thermal conductivity are provided. Preferably, the material is a thermoelectric material. In general, the thermoelectric material is designed to block phonons, which reduces or eliminates heat transport due to lattice vibrations and thus cross-plane thermal conductivity. By reducing the thermal conductivity of the...

12/27/12 - 20120326123 - Apparatus and methods for improving parallel conduction in a quantum well device
Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodiments may be described and claimed....

12/20/12 - 20120319082 - Low thermal conductivity matrices with embedded nanostructures and methods thereof
A matrix with at least one embedded array of nanowires and method thereof. The matrix includes nanowires and one or more fill materials located between the nanowires. Each of the nanowires including a first end and a second end. The nanowires are substantially parallel to each other and are fixed...

07/05/12 - 20120168719 - Epitaxial substrate for electronic device, in which current flows in lateral direction and method of producing the same
To provide an epitaxial substrate for electronic devices, in which current flows in a lateral direction, which enables accurate measurement of the sheet resistance of HEMTs without contact, and to provide a method of efficiently producing the epitaxial substrate for electronic devices, the method characteristically includes the steps of forming...

05/17/12 - 20120119189 - Ohmic contact to semiconductor
An ohmic contact to a semiconductor layer including a heterostructure barrier layer and a metal layer adjacent to the heterostructure barrier layer is provided. The heterostructure barrier layer can form a two dimensional free carrier gas for the contact at a heterointerface of the heterostructure barrier layer and the semiconductor...

03/29/12 - 20120074385 - Semiconductor devices and methods of manufacturing the same
A semiconductor device includes a substrate, a buffer layer on the substrate, and a plurality of nitride semiconductor layers on the buffer layer. The semiconductor device further includes at least one masking layer and at least one inter layer between the plurality of nitride semiconductor layers. The at least one...

03/22/12 - 20120068157 - Transistor having graphene base
A transistor device having a graphene base for the transport of electrons into a collector is provided. The transistor consists of a heterostructure comprising an electron emitter, an electron collector, and a graphene material base layer consisting of one or more sheets of graphene situated between the emitter and the...

03/15/12 - 20120061648 - Apparatus, method and computer program product providing radial addressing of nanowires
Disclosed is a method to construct a device that includes a plurality of nanowires (NWs) each having a core and at least one shell. The method includes providing a plurality of radially encoded NWs where each shell contains one of a plurality of different shell materials; and differentiating individual ones...

01/12/12 - 20120007048 - Iii-nitride based semiconductor structure with multiple conductive tunneling layer
A semiconductor structure includes a substrate and a conductive carrier-tunneling layer over and contacting the substrate. The conductive carrier-tunneling layer includes first group-III nitride (III-nitride) layers having a first bandgap, wherein the first III-nitride layers have a thickness less than about 5 nm; and second III-nitride layers having a second...

12/29/11 - 20110315959 - Electronic and optoelectronic devices with quantum dot films
Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the...

12/22/11 - 20110309329 - Nitride semiconductor device
According to one embodiment, a nitride semiconductor device includes a substrate, an Alx1Ga1-x1N first buried layer, an InyAlzGa1-y-zN buried layer and an Alx2Ga1-x2N second buried layer. The substrate has protrusions formed in an in-plane direction on a first major surface, and a depression between adjacent ones of the protrusions. The...

10/13/11 - 20110248241 - Nitride semiconductor element
A nitride semiconductor element includes: a strain suppression layer formed on a silicon substrate via an initial layer; and an operation layer formed on the strain suppression layer. The strain suppression layer includes a first spacer layer, a second spacer layer formed on and in contact with the first spacer...

10/06/11 - 20110240962 - Epitaxial substrate for electronic device and method of producing the same
An epitaxial substrate for an electronic device having a Si single crystal substrate, a buffer as an insulating layer formed on the Si single crystal substrate, and a main laminated body formed by plural group III nitride layers epitaxially grown on the buffer, wherein a lateral direction of the epitaxial...

09/29/11 - 20110233519 - Fabrication of gan substrate by defect selective passivation
Defect selective passivation in semiconductor fabrication for reducing defects....

08/25/11 - 20110204330 - Joined nanostructures and methods therefor
Nanostructures are joined using one or more of a variety of materials and approaches. As consistent with various example embodiments, two or more nanostructures are joined at a junction between the nanostructures. The nanostructures may touch or be nearly touching at the junction, and a joining material is deposited and...

08/18/11 - 20110198569 - Apparatus and methods of nanopatterning and applications of same
A method for patterning nanostructures in a semiconductor heterostructure, which has at least a first layer and a second layer, wherein the first layer has a first surface and an opposite, second surface, the second layer has a first surface and an opposite, second surface, and the first layer is...

07/28/11 - 20110180783 - Boundary-modulated nanoparticle junctions and a method for manufacture thereof
A method of providing miniaturized size down to nanoscale electronic materials, which may be easily incorporated into the future ever-scaling down power electronics, microelectronics and nanoelectronics device systems, is disclosed. A linear or nonlinear nanoparticle (nanowire) junction design that allows precise controllability over an electronic device (e.g., a varistor) performance,...

07/14/11 - 20110168978 - High efficiency thermoelectric materials and devices
Growth of thermoelectric materials in the form of quantum well superlattices on three-dimensionally structured substrates provide the means to achieve high conversion efficiency of the thermoelectric module combined with inexpensiveness of fabrication and compatibility with large scale production. Thermoelectric devices utilizing thermoelectric materials in the form of quantum well semiconductor...

06/16/11 - 20110140083 - Semiconductor device structures with modulated doping and related methods
A semiconductor device may include a doped semiconductor region having a modulated dopant concentration. The doped semiconductor region may be a silicon doped Group III nitride semiconductor region with a dopant concentration of silicon being modulated in the Group III nitride semiconductor region. In addition, a semiconductor active region may...

04/07/11 - 20110079768 - Photoactive materials containing bulk and quantum-confined semiconductor structures and optoelectronic devices made therefrom
The present invention provides photoactive materials that include quantum-confined semiconductor nanostructures in combination with non-quantum confined and bulk semiconductor structures to enhance or create a type II band offset structure. The photoactive materials are well-suited for use as the photoactive layer in photoactive devices, including photovoltaic devices, photoconductors and photodetectors....

01/13/11 - 20110006285 - Core-alloyed shell semiconductor nanocrystals
The invention relates to a core-alloyed shell semiconductor nanocrystal comprising: (i) a core of a semiconductor material having a selected band gap energy; (ii) a core-overcoating shell consisting of one or more layers comprised of an alloy of the said semiconductor of (i) and a second semiconductor; (iii) and an...

12/09/10 - 20100308303 - Quantum dot memory
A method of making a quantum dot memory cell, the quantum dot memory cell including an array of quantum dots disposed between a first electrode and a second electrode, includes obtaining values for a tunneling current through the quantum dot memory cell as a function of a voltage applied to...

11/18/10 - 20100289004 - Zno-based thin film and zno-based semiconductor element
Provided are a ZnO-based thin film and a ZnO-based semiconductor device which allow: reduction in a burden on a manufacturing apparatus; improvement of controllability and reproducibility of doping; and obtaining p-type conduction without changing a crystalline structure. In order to be formed into a p-type ZnO-based thin film, a ZnO-based...

11/04/10 - 20100276664 - Thin-walled structures
Various embodiments provide thin-walled structures and methodologies for their formation. In one embodiment, the thin-walled structure can be formed by disposing a semiconductor material in a patterned aperture using a selective growth mask that includes a plurality of patterned apertures, followed by a continuous growth of the semiconductor material using...

11/04/10 - 20100276665 - Production of semiconductor devices
A method of producing a layered semiconductor device comprises the steps of: (a) providing a base comprising a plurality of semiconductor nano-structures, (b) growing a semiconductor material onto the nano-structures using an epitaxial 5 growth process, and (c) growing a layer of the semiconductor material using an epitaxial growth process....

11/04/10 - 20100276666 - Controlled quantum dot growth
The present disclosure generally relates to techniques for controlled quantum dot growth as well as a quantum dot structures. In some examples, a method is described that includes one or more of providing a substrate, forming a defect on the substrate, depositing a layer on the substrate and forming quantum...

08/19/10 - 20100207100 - Radiation-emitting semiconductor body
A radiation-emitting semiconductor body includes a contact layer and an active zone. The semiconductor body has a tunnel junction arranged between the contact layer and the active zone. The active zone has a multi-quantum well structure containing at least two active layers that emit electromagnetic radiation when an operating current...

06/24/10 - 20100155700 - Thermoelectric cooler for semiconductor devices with tsv
This invention discloses a thermoelectric structure for cooling an integrated circuit (IC) chip, the thermoelectric structure comprises a first type superlattice layer formed on top of the IC chip connected to a first voltage, and a second type superlattice layer formed on the bottom of the IC chip connected to...

04/08/10 - 20100084630 - Apparatus and method of detecting electromagnetic radiation
A high speed and miniature detection system, especially for electromagnetic radiation in the GHz and THz range comprises a semiconductor structure having a 2D charge carrier layer or a quasi 2D charge carrier layer with incorporated single or multiple defects, at least first and second contacts to the charge carrier...

12/24/09 - 20090315016 - Atomic layer deposition for functionalizing colloidal and semiconductor particles
A method for producing a product of a functionalized nanocomposition colloidal material using atomic layer deposition to coat the colloidal material. The ALD layer comprises an inorganic material which enables improved optical and electrical properties for the nanocomposite....

09/24/09 - 20090236586 - Epitaxial material used for gan based led with low polarization effect and manufacturing method thereof
A method of manufacturing epitaxial material used for GaN based LED with low polarization effect, which includes steps of growing n-type InGaAlN layer composed of GaN buffer layer (2) and n-type GaN layer (3), low polarizing active layer composed of InGaAlN multi-quantum well structure polarized regulating and controlling layer (4)...

07/09/09 - 20090173932 - Thermoelectric material, infrared sensor and image forming device
A thermoelectric conversion material includes a superlattice structure produced by laminating a barrier layer containing insulating SrTiO3, and a quantum well layer containing SrTiO3 which has been converted into a semiconductor by doping an n-type impurity therein. The quantum well layer has a thickness 4 times or less the unit...

06/18/09 - 20090152529 - Light emitting devices with inhomogeneous quantum well active regions
A method of fabricating a light emitting device includes modulating a crystal growth parameter to grow a quantum well layer that is inhomogeneous and that has a non-random composition fluctuation across the quantum well layer....

03/05/09 - 20090057649 - Assembly of ordered carbon shells on semiconducting nanomaterials
In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encapsulated semiconducting nanomaterials is disclosed. In some embodiments applications of encapsulated semiconducting nanomaterials are described....