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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Thin Active Physical Layer Which Is (1) An Active Potential Well Layer Thin Enough To Establish Discrete Quantum Energy Levels Or (2) An Active Barrier Layer Thin Enough To Permit Quantum Mechanical Tunneling Or (3) An Active Layer Thin Enough To Permit Carrier Transmission With Substantially No Scattering (e.g., Superlattice Quantum Well, Or Ballistic Transport Device) > Heterojunction > Quantum Well Quantum WellQuantum Well patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/10/08 - 20080006817 - Light emitting device and semiconductor device In order to make it possible to grow up a light emitting device easily on a substrate made of a Si material system while production of an anti-phase domain can be prevented and a sufficiently high luminous efficiency can be obtained, the light emitting device is configured as a device ... 01/10/08 - 20080006816 - Intersubband detector with avalanche multiplier region A photodetector for use at wavelengths of 2 μm and longer has an intersubband absorption region to provide absorption at wavelengths beyond 2 μm, integrated with an avalanche multiplier region to provide low-rise gain. In one particular design, the intersubband absorption region is a quantum-confined absorption region (e.g., based on ... 12/06/07 - 20070278476 - Optoelectronic devices utilizing materials having enhanced electronic transitions An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire. ... 11/29/07 - 20070272915 - Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active ... 11/22/07 - 20070267625 - Utilizing nanowire for different applications One embodiment in accordance with the invention is an apparatus that can include a non-single crystal substrate and a nanowire grown from a surface of the non-single crystal substrate. Furthermore, the apparatus can also include an electrode coupled to the nanowire. It is noted that the nanowire can be electrically ... 11/15/07 - 20070262294 - Light source including quantum dot material and apparatus including same A light source comprising a light emitting device and quantum dot material is disclosed. According to various embodiments, the quantum dot material is positioned relative to the light emitting device such that the quantum dot material absorbs light emitted from the light emitting device and converts the wavelengths of photons ... 09/20/07 - 20070215857 - Semiconductor quantum dot device A p-type semiconductor barrier layer is provided in the vicinity of undoped quantum dots, and holes in the p-type semiconductor barrier layer are injected in advance in the ground level of the valence band of the quantum dots. Lowering the threshold electron density of conduction electrons in the ground level ... 09/20/07 - 20070215856 - Quantum dot electroluminescence device and method of fabricating the same A quantum dot electroluminescence device and a method of fabricating the same are provided. The quantum dot electroluminescence device comprises an insulating substrate; a quantum dot luminescence layer supported by the insulating substrate, and composed of a monolayer or multilayer of quantum dots, which are cross-linked by a cross-link agent; ... 09/13/07 - 20070210300 - Semiconductor device and manufacturing method thereof A quantum dot semiconductor device securing sufficient gains without depending on polarization and a manufacturing method thereof. On a first barrier layer, a multilayer quantum dot is formed by repeatedly stacking alternately a quantum dot layer and a second barrier layer. On a quantum dot layer as an uppermost layer ... 07/26/07 - 20070170418 - Broad-emission nanocrystals and methods of making and using same In one aspect, the invention relates to an inorganic nanoparticle or nanocrystal, also referred to as a quantum dot, capable of emitting white light. In a further aspect, the invention relates to an inorganic nanoparticle capable of absorbing energy from a first electromagnetic region and capable of emitting light in ... 07/19/07 - 20070164270 - Methods of fabricating nanostructures and nanowires and devices fabricated therefrom One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will ... 07/05/07 - 20070152207 - Semiconductor light-emitting device and manufacturing method thereof A semiconductor light-emitting device comprises a substrate; and an active layer formed over the substrate comprising a well layer having an unintentionally-doped impurities; a first barrier layer; and a second barrier layer, wherein the well layer is disposed between the first barrier layer and the second barrier layer, the first ... 06/28/07 - 20070145351 - Semiconductor device with anisotropy-relaxed quantum dots A semiconductor quantum dot device includes: an inclined InP substrate whose principal surface normal is inclined from a [0 0 1] direction to a [1 −1 0] direction in a (0 0 1) plane; and semiconductor quantum dots made of InAs1-xSbx (0<x<1) and disposed above the principal surface of the ... 06/14/07 - 20070131923 - Infrared detector At least one or more dark current reducing layers having a quantum well structure are provided at an end portion in a stacking direction of an infrared detecting section in which quantum dot layers are stacked. ... 05/10/07 - 20070102694 - Polymer-nanocrystal quantum dot composites and optoelectronic devices Disclosed are compositions including semiconducting polymers and quantum dot nanocrystals. Also disclosed are optoelectronic devices prepared from semiconducting polymers and quantum dot nanocrystals. Also are disclosed methods of increasing the quantum efficiency in optoelectronic devices and methods of generating a photocurrent. ... 05/03/07 - 20070096078 - Organic-inorganic hybrid nanocomposite thin films for high-powered and/or broadband photonic device applications and methods for fabricating the same and photonic device having the thin films An organic-inorganic hybrid nanocomposite thin film for a high-powered and/or broadband photonic device having an organic ligand-coordinated semiconductor quantum dot layer, a photonic device having the same, and a method of fabricating the same are provided. The organic-inorganic hybrid nanocomposite thin film is composed of a stack structure comprising a ... 04/26/07 - 20070090339 - Nitride semiconductor light emitting device A nitride semiconductor light emitting device has high internal quantum efficiency but low operating voltage. The nitride semiconductor light emitting device includes an n-nitride semiconductor layer; an active layer of multi-quantum well structure formed on the n-nitride semiconductor layer, and having a plurality of quantum well layers and a plurality ... 04/26/07 - 20070090338 - Light-emitting device and light-emitting device array using a whispering gallery mode, and method for manufacturing same A light-emitting device is capable of oscillating in a convex-whispering gallery mode. The lighting-emitting device includes a PIN-type semiconductor including a p-type distributed Bragg reflector, an active region and an n-type distributed Bragg reflector formed on a substrate by an epitaxial growth, wherein the PIN-type semiconductor having a hole with ... 04/12/07 - 20070080340 - Variable capacitor single-electron device The present invention provides a single-electron transistor device 100. The device comprises a source 105 and drain 110 located over a substrate 115 and a quantum island 120 situated between the source and drain, to form tunnel junctions 125, 130 between the source and drain. The device further includes a ... 04/12/07 - 20070080339 - Universal gates for ising tqft via time-tilted interferometry Experiments suggest that the mathematically weakest non-abelian TQFT may be physically the most robust. Such TQFT's—the v=5/2 FQHE state in particular—have discrete braid group representations, so one cannot build a universal quantum computer from these alone. Time tilted interferometry provides an extension of the computational power (to universal) within the ... 03/29/07 - 20070069194 - Fabrication of nanowires This disclosure relates to a system and method for creating nanowires. A nanowire can be created by exposing layers of material in a superlattice and dissolving and transferring material from edges of the exposed layers onto a substrate. The nanowire can also be created by exposing layers of material in ... 03/22/07 - 20070063183 - Substrate having silicon dots A substrate having silicon dots wherein at least one insulating layer and at least one group of silicon dots are formed on a substrate selected from a non-alkali glass substrate and a substrate made of a polymer material. ... 03/22/07 - 20070063182 - Enhancement mode single electron transistor A transistor having a bottom dielectric layer, a first layer, a second layer, a top dielectric layer, and a gate electrode. The first layer and the second layer form a composite quantum well between the bottom dielectric layer and the top dielectric layer. The first layer, the second layer, and ... 03/15/07 - 20070057249 - Semiconductor light emitting device with lateral current injection in the light emitting region A semiconductor light emitting device includes an active region, an n-type region, and a p-type region comprising a portion that extends into the active region. The active region may include multiple quantum wells separated by barrier layers, and the p-type extension penetrates at least one of the quantum well layers. ... 03/08/07 - 20070051939 - Optical semiconductor device This invention is constructed by stacking an n-type InGaAlAs-GRIN-SCH layer 3, an MQW layer 4, a p-type InGaAlAs-GRIN-SCH layer 5, a p-type InAlAs electron-stopping layer 6, and others, in that order, on an n-type InP wafer 1; wherein the MQW layer 4 includes InGaAlAs-strained quantum well layers and InGaAlAsSb-formed barrier ... 03/08/07 - 20070051938 - Semiconductor device A two-dimensional carrier is generated in the vicinity of an interface that is a hetero interface between a semiconductor layer and a semiconductor layer. Two concave portions are formed so as to extend from a primary surface as far as the interface. An electrode that is made of metal and ... 03/01/07 - 20070045609 - Quantum wells for light conversion A solid state light emitting device according to the present invention comprises an emitter structure having an active region of semiconductor material and a pair of oppositely doped layers of semiconductor material on opposite sides of said active region. The active region emits light at a first wavelength in response ... 03/01/07 - 20070045608 - Window interface layer of a light-emitting diode This invention is about a window interface layer in a light-emitting diode which comprises an n-type GaAs substrate with an n-type ohmic electrode at the bottom side thereof; an n-type AlGaInP cladding layer formed atop the substrate; an undoped AlGaInP active layer formed atop the n-type cladding layer; a p-AlGaInP ... 03/01/07 - 20070045607 - Algainn nitride substrate structure using tin as buffer layer and the manufacturing method thereof The present invention discloses a AlGaInN nitride substrate structure using TiN as buffer layer and the manufacturing method thereof. The present invention deposits TiN having (111) surface onto the silicon substrate having (111) surface as a buffer layer, and grows III-V AlGaInN nitride epitaxy structure having (0001) surface. The present ... 02/15/07 - 20070034858 - Light-emitting diodes with quantum dots An apparatus includes a light-emitting diode. The light-emitting diode has a semiconductor matrix of one or more group III-nitride alloys and quantum dots dispersed inside the matrix. The quantum dots include a group III-nitride alloy different from the one or more group III-nitride alloys of the matrix. ... 02/08/07 - 20070029542 - Semiconductor optical device A semiconductor optical device comprises a first conductive type III-V compound semiconductor layer, a second conductive type III-V compound semiconductor layer, and an active region. The first conductive type III-V compound semiconductor layer is provided on a substrate. The second conductive type III-V compound semiconductor layer is provided on the ... 02/08/07 - 20070029541 - High efficiency light emitting device A highly efficient III-nitride/II-Oxide light emitting device that has a n++-tunneling layer, which comprises at least one material selected from a group consisting of n++-GaN, n++-InGaN, n++-AlGaN, n++-AlGaInN, n++-ZnO, n++-ZnCdO, n++-ZnMgO, n++-ZnMgCdO, that is deposited on top of the p-layer in a LED structure. After that, a top n-layer is ... 01/11/07 - 20070007507 - Single photon source Microcavity comprising two reflectors, at least one semiconductor layer separating said reflectors and a semiconductor quantum well wherein at least one of said reflectors and of said at least one semiconductor layer comprises a structure which is adjusted to localize a polariton in said microcavity. ... 01/04/07 - 20070001161 - Fabrication of quantum dots embedded in three-dimensional photonic crystal lattice In one embodiment, a method of producing an optoelectronic nanostructure includes preparing a substrate; providing a quantum well layer on the substrate; etching a volume of the substrate to produce a photonic crystal. The quantum dots are produced at multiple intersections of the quantum well layer within the photonic crystal. ... 12/28/06 - 20060289854 - Optical semiconductor device with multiple quantum well structure An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers ... 12/28/06 - 20060289853 - Apparatus for manufacturing a quantum-dot element An apparatus for manufacturing a quantum-dot element is disclosed. The apparatus includes a reaction chamber for evaporating or sputtering at least one electrode layer or at least one buffer layer on the substrate. The substrate-supporting base is located inside the reaction chamber for fixing the substrate. The atomizer has a ... 12/21/06 - 20060284163 - Single elog growth transverse p-n junction nitride semiconductor laser A vertical quantum well nitride laser-can be fabricated by ELOG (epitaxial lateral overgrowth), with the vertical quantum wells created by deposition over the vertical a-face of the laterally growing edges and forming the transverse junction in a single ELOG-MOCVD (metal organic chemical vapor deposition) growth step. Vertical quantum wells may ... 12/21/06 - 20060284162 - Programmable optical component for spatially controlling the intensity of beam of radiation A programmable optical component (10) for spatially controlling the intensity of a beam of radiation (b), which component comprises a programmable layer which is divided in programmable elements (4,6,8), characterized in that each programmable element comprises bendable nano-elements (8) which are switchable between a non-bend state (8) and a bend ... 12/14/06 - 20060278865 - Non-polar (al,b,in,ga)n quantum well and heterostructure materials and devices A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11{overscore (2)}0) a-plane GaN layers are grown on an r-plane (1{overscore (1)}02) sapphire substrate using MOCVD. These non-polar (11{overscore (2)}0) a-plane GaN layers comprise templates for producing non-polar (Al, B, In, Ga)N quantum well and heterostructure ... 11/23/06 - 20060261325 - Nuclear powered quantum dot light source A nuclear powered quantum dot light source, having a holder having at least a portion that is a radiolucent and a mixture of quantum dots, a radionuclide, and a radiolucent binder material into which the quantum dots and radionuclide are located. Alpha and/or beta particles from the radionuclide energize the ... 11/23/06 - 20060261324 - Photonic crystal optical circuit and method for controlling the same In an optical circuit including multi-dimensional photonic crystals, in which the optical circuit has a structure (33), such as a light emitting member or a light receiving member, having a natural resonance frequency, another structure (34) having a natural resonance frequency slightly differing from the natural resonance frequency of the ... 11/09/06 - 20060249727 - Gallium-nitride based light emitting diode light emitting layer structure A number of light-emitting layer structures for the GaN-based LEDs that can increase the lighting efficiency of the GaN-based LEDs on one hand and facilitate the growth of epitaxial layer with better quality on the other hand are provided. The light-emitting layer structure provided is located between the n-type GaN ... 11/02/06 - 20060243960 - Compound semiconductor and method for producing same A group III-V compound semiconductor comprising a single quantum well structure which has two barrier layers and a quantum well layer represented by the formula: InxGayAlzN (wherein x+y+z=1, 0<x<1, 0<y<1, and 0≧z <1) between the barrier layers, wherein a multiple quantum well structure having repeatedly the barrier layers and the ... 10/26/06 - 20060237711 - Field-effect transistor A nitride-based group III-V compound semiconductor device includes a buffer layer, a first nitride semiconductor layer and a second nitride semiconductor layer successively stacked on a substrate, the first and the second nitride layers having their respective lattice constants a1 and a2 in the relation a1>a2, an ohmic source electrode ... 10/12/06 - 20060226416 - Nitride semiconductor device The invention relates to a nitride semiconductor device having electron-emitting. In the device, an n-type nitride semiconductor layer is formed over a substrate, and an active layer is formed over the n-type nitride semiconductor layer. Also, a p-type nitride semiconductor layer is formed on the active layer. The active layer ... 10/05/06 - 20060220002 - Semiconductor laser having optical guide layer doped for decreasing resistance In a semiconductor laser element: a lower cladding layer of a first conductivity type, a quantum-well active layer, an upper cladding layer of a second conductivity type, a contact layer of the second conductivity type, and a first electrode of the second conductivity type are formed in this order above ... 10/05/06 - 20060220001 - Semiconductor device A semiconductor device including quantum dots comprises a barrier layer of a semiconductor crystal having a first lattice constant and a quantum dot layer including a plurality of quantum dots of a semiconductor crystal having a second lattice constant formed on the barrier layer and a side barrier layer of ... 10/05/06 - 20060220000 - Photon source A photon source comprising a photon source body, said photon source body comprising at least one quantum dot; carrier injection means for injecting carriers into said at least one quantum dot and change of state means for changing the state of the carriers within the quantum dot after a predetermined ... 09/14/06 - 20060202188 - Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid ... 08/31/06 - 20060192195 - Nitride semiconductor light emitting device A nitride semiconductor light emitting device is provided. The nitride semiconductor light emitting device includes: an n-type nitride semiconductor layer; an Incontaining super lattice structure layer formed above the n-type nitride semiconductor layer; a first electrode contact layer formed above the super lattice structure layer; a first cluster layer formed ... 08/10/06 - 20060175600 - Gallium nitride compound semiconductor device and manufacturing method A light-emitting element using GaN. On a substrate (10), formed are an SiN buffer layer (12), a GaN buffer layer (14), an undoped GaN layer (16), an Si-doped n-GaN layer (18), an SLS layer (20), an undoped GaN layer (22), an MQW light-emitting layer (24), an SLS layer (26), and ... 08/03/06 - 20060169971 - Energy conversion film and quantum dot film comprising quantum dot compound, energy conversion layer including the quantum dot film, and solar cell including the energy conversion layer An energy conversion film and a quantum dot film which contain a quantum dot compound, an energy conversion layer including the quantum dot film, and a solar cell including the energy conversion layer. The films act as cut-off filters blocking light of a particular energy level using the light absorption ... 08/03/06 - 20060169970 - Creation of anisotropic strain in semiconductor quantum well Methods and devices for creating an anisotropic strain in a semiconductor quantum well structure to induce anisotropy thereof are disclosed herein. Initially, a substrate is provided, and a quantum well structure formed upon the substrate. A first crystalline layer (e.g., a GaAs layer) having a first crystalline phase can then ... 07/27/06 - 20060163556 - Refractive index variable device A refractive index variable device has a structure including quantum dots dispersed in a solid matrix, each of the quantum dots comprising a combination of a negatively charged accepter and a positively charged atom, where the outermost electron shell of the positively charged atom is fully filled with electrons so ... 07/20/06 - 20060157686 - Quantum dot phosphor for light emitting diode and method of preparing the same Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the ... 07/20/06 - 20060157685 - Semiconductor device method of manfacturing a quantum well structure and a semiconductor device comprising such a quantum well structure Consistent with example embodiments a semiconductor device and a method are disclosed for obtaining on a substrate a multilayer structure with a quantum well structure. The quantum well structure comprises a semiconductor layer sandwiched by insulating layers, wherein the material of the insulating layers has preferably a high dielectric constant. ... 07/13/06 - 20060151775 - Solid state charge qubit device Ionisation of one of a pair of dopant atoms (11, 12) in a substrate (13) creates a double well potential, and a charge qubit is realised by the location of one or more electrons or holes (14) within this potential. The dopant atoms may comprise phosphorous atoms, located in a ... 07/06/06 - 20060145138 - Semiconductor nanoparticle surface modification method Semiconductor nanoparticles having high luminescence properties that are preferable for applications and uses of biotechnology are provided. With the use of electric charges on the surfaces of particles, the particles and selected polymers are allowed to electrostatically bind to each other, such that the surfaces of the particles are coated. ... 07/06/06 - 20060145137 - Quantum dot/quantum well light emitting diode A quantum dot/quantum well light emitting diode (LED) is provided with a LED at one side of a substrate, and a second light emitting layer and a third light emitting layer at the other side of the substrate. When a proper forward bias is applied to the LED to emit ... 07/06/06 - 20060145136 - Quantum dot memory Provided is a method for fabricating self-assembled regions of silicon as well as semiconductor memory cells based thereon. By structuring a layer of silicon prior to thermal formation of the self-assembled regions under vacuum conditions control of location of these regions is achieved. A chargeable self-assembled region of silicon acts ... 06/22/06 - 20060131557 - Optical semiconductor device and method for fabricating the same An optical semiconductor device includes an active layer having a quantum well structure including alternately stacked well layers and barrier layers with a larger band gap than the well layers. The band gap of each of the well layers and the barrier layers is constant, each well layer is uniformly ... 06/15/06 - 20060124918 - Polychromatic led's and related semiconductor devices A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The ... 04/20/06 - 20060081834 - Semiconductor luminescent device and manufacturing method thereof A first principal plane faces a second principal plane of a p-type Ga N compound semiconductor that is in contact with an MQW luminescent layer. On the surface of the first principal plane, a first region made up of the p-type Ga N compound semiconductor including at least Ni is ... 04/13/06 - 20060076552 - Light emitting device and method for fabricating the same The light emitting device comprises a substrate 10 of a p-type semiconductor; an active layer 20 formed of a plurality of quantum dot layers 18 stacked, the quantum dot layers 18 having three-dimensional grown islands self-formed by S-K mode, respectively; and an n-type semiconductor layer 22 formed over the active ... 04/13/06 - 20060076551 - Nanotube based multi-level memory structure A multi-level memory structure comprises the junction of a series of metallic type nanotube structures attached to a semiconductive nanotube so that electrons are substantially captured in said junction. In the preferred embodiment, one or more arms of the metallic type nanotube structures include one or more boron nitride bands. ... 03/16/06 - 20060054880 - High performance hyperspectral detectors using photon controlling cavities According to various embodiments, a photodetector including a first contact layer, a second contact layer, an active region, and a photonic crystal resonant cavity is disclosed. The photonic crystal resonant cavity can operate as a resonant structure to enhance the response of the photodetector at one or more wavelengths. In ... 03/09/06 - 20060049394 - Layered composite film incorporating a quantum dot shift register Quantum dots are positioned within a layered composite film to produce one-dimensional and multi-dimensional shift registers within the film. Charge carriers are driven into the quantum dots by energy in connected control paths. The charge carriers are trapped in the quantum dots through quantum confinement, such that the charge carriers ... 03/02/06 - 20060043357 - Quantum computer apparatus Quantum computer includes optical resonator including system group containing systems each having energy states highest-energy state |3>, and other two energy states |1> and |2>, fourth or more states |p>, transition angular frequency (ωij) between |i> and |j>, homogeneous broadening (Δωhomo,ij) in transition angular frequency between |i> and |j>, optical ... 03/02/06 - 20060043356 - Semiconductor optical device having quantum well structure and its manufacturing method Oxygen is doped in a quantum well active layer. First, an n-type In0.02Ga0.98N barrier layer 550 of 10 nm is formed by supplying TMG at 10 sccm, TMI at 30 sccm, O2 at 20 sccm, and NH3 at 10 slm, on the n-type GaN optical guide layer 405. Next, a ... 02/09/06 - 20060027799 - Methods of forming arryas of nanoscale building bolcks THE invention is a method of producing an individual an array, or multiple arrays of quantum dots. Single dots, as well as two or three-dimensional groupings may be created. The invention involves the transfer of quantum dots from a receptor site on a substrate where they are originally created to ... 01/19/06 - 20060011904 - Layered composite film incorporating quantum dots as programmable dopants Quantum dots are positioned within a layered composite film to produce a plurality of real-time programmable dopants within the film. Charge carriers are driven into the quantum dots by energy in connected control paths. The charge carriers are trapped in the quantum dots through quantum confinement, such that the charge ... 01/12/06 - 20060006376 - Strongly textured atomic ridge nanowindows The present invention provides a MOSFET device comprising: a substrate including a plurality of atomic ridges, each of the atomic ridges including a semiconductor layer comprising Si and an dielectric layer comprising a Si compound; a plurality nanogrooves between the atomic ridges; at least one elongated molecule located in at ... 01/12/06 - 20060006375 - Light mixing led A light mixing LED includes a first active layer containing In laminated adjacent to an n-type nitride-based semiconductor stack layer, a second active layer containing In laminated adjacent to a p-type nitride-based semiconductor stack layer, and a tunnelable barrier layer formed between the first active layer and the second active ... 12/01/05 - 20050263751 - Non-magnetic semiconductor spin transistor A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the characteristics of spin-polarized current flow. The nonmagnetic semiconductor device exploits the properties of bulk inversion asymmetry (BIA) in ... 11/24/05 - 20050258416 - Switching devices based on half-metals One embodiment of the present invention provides a switching device that can vary a spin-polarized current based on an input signal. The switching device comprises a first conducting region, a second conducting region, and a half-metal region interposed between the first conducting region and the second conducting region. The half-metal ... 11/24/05 - 20050258415 - Heterojunction far infrared photodetector A photodetector and method of detecting far infrared optical signals. In one embodiment of the present invention, the photodetctor has a plurality of N barriers, N being an integer greater than 1, each barrier being a layer of a material made from a first and a second group III elements ... 10/20/05 - 20050230674 - Semiconductor light emitter A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitute an active layer, wherein the barrier ... 10/13/05 - 20050224785 - Quantum logic gate and quantum logic operation method using exciton A quantum logic gate utilizes an inter-polarization (dipole-dipole) interaction between excitons having polarization in semiconductor quantum well structures, or a spin exchange interaction between spin polarized excitons in the semiconductor quantum well structures. Problems associated with conventional semiconductor quantum well structures are solved in that a phase relaxation time is ... 10/13/05 - 20050224784 - Adiabatic quantum computation with superconducting qubits A method for computing using a quantum system comprising a plurality of superconducting qubits is provided. Quantum system can be in any one of at least two configurations including (i) an initialization Hamiltonian H0 and (ii) a problem Hamiltonian HP. The plurality of superconducting qubits are arranged with respect to ... 10/13/05 - 20050224783 - Nitride semiconductor laser device and nitride semiconductor device A nitride semiconductor laser device comprises, on a principle face of a nitride semiconductor substrate: a nitride semiconductor layer having a first conductivity type; an active layer comprising indium, and a nitride semiconductor layer having a second conductivity type that is different from said first conductivity type, and on the ... 10/13/05 - 20050224782 - Diamond based blue/uv emission source A diamond based Blue/UV light emitting source is disclosed. The source includes a diamond substrate having a first conductivity type, a first aluminum gallium nitride layer above the diamond substrate having the same conductivity type as the substrate, a bulk or a quantum well structure on the AlGaN layer formed ... 10/13/05 - 20050224781 - Ultraviolet group iii-nitride-based quantum well laser diodes A pair of undoped spacer layers are provided adjacent to, or near to, a single quantum well aluminum gallium nitride active region. In various exemplary embodiments, the undoped spacer layers are provided between the single quantum well aluminum gallium nitride active region and carrier confinement layers. The undoped spacer layers ... 10/06/05 - 20050218398 - Nano-electronics Systems and methods are disclosed to process a semiconductor substrate by fabricating a first layer on the substrate using semiconductor fabrication techniques; fabricating a second layer above the first layer having one or more NANO-bonding areas; self-assemblying one or more NANO-elements; and bonding the NANO-elements to the NANO-bonding areas. ... 10/06/05 - 20050218397 - Nano-electronics for programmable array ic Systems and methods are disclosed to process a programmable semiconductor substrate by fabricating a first layer on the substrate using semiconductor fabrication techniques; fabricating a second layer above the first layer having one or more NANO-bonding areas; self-assemblying one or more NANO-elements; and bonding the NANO-elements to the NANO-bonding areas. ... 09/29/05 - 20050211971 - Gallium nitride semiconductor light emitting device having multi-quantum-well structure active layer, and semiconductor laser light source device A gallium nitride semiconductor laser device has an active layer (6) made of a nitride semiconductor containing at least indium and gallium between an n-type cladding layer (5) and a p-type cladding layer (9). The active layer (6) is composed of two quantum well layers (14) and a barrier layer ... 09/29/05 - 20050211970 - Metal nano-objects, formed on semiconductor surfaces, and method for making said nano-objects The invention is applicable in nano-electronics and for example provides a means of obtaining nano-objects (4) by depositing a metal on a prepared surface (2) of cubic SiC. ... 09/22/05 - 20050205857 - Qwip with electron launcher for reducing dielectric relaxation effect in low background conditions A QWIP structure is disclosed that includes a graded emitter barrier and can further be configured with a blocked superlattice miniband. The graded emitter barrier effectively operates to launch dark electrons into the active quantum well region, thereby improving responsivity. A graded collector barrier may also be included for reverse ... 09/15/05 - 20050199871 - Cold atom system with atom chip wall A compact vacuum chamber gives electric and optical access to a microchip, which is part of the chamber. The main use of the microchip is to confine, cool and manipulate cold atoms (atom chip). The main new feature is that the microchip forms one wall of a vacuum cell. This ... 09/15/05 - 20050199870 - Quantum dot structures Symmetric quantum dots are embedded in quantum wells. The symmetry is achieved by using slightly off-axis substrates and/or overpressure during the quantum dot growth. The quantum dot structure can be used in a variety of applications, including semiconductor lasers. ... 08/25/05 - 20050184285 - Spin readout and initialization in semiconductor quantum dots A semiconductor quantum dot device converts spin information to charge information utilizing an elongated quantum dot having an asymmetric confining potential along its length so that charge movement occurs during orbital excitation. A single electron sensitive electrometer is utilized to detect the charge movement. Initialization and readout can be carried ... 08/25/05 - 20050184284 - Method and structure to isolate a qubit from the environment A method (and structure) of coupling a qubit includes locating the qubit near a transmission line approximately at a location corresponding to a node at a predetermined frequency. ... 08/18/05 - 20050179027 - Nitride based semiconductor light-emitting device Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1−x1−y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1−AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer ... 08/18/05 - 20050179026 - Photonic assisted electron emitter device and method A photonic assisted emitter including an at least partially transparent electron source layer, a thin metal layer; and a tunneling layer disposed between said at least partially transparent electron source layer and said thin metal layer. ... 08/11/05 - 20050173695 - Method for forming quantum dot, and quantum semiconductor device and method for fabricating the same The method for forming a quantum dot according to the present invention comprises the step of forming an oxide in a dot-shape on the surface of a semiconductor substrate 10, the step of removing the oxide to form a concavity 16 in the position from which the oxide has been ... 08/11/05 - 20050173694 - Type ii quantum well mid-infrared optoelectronic devices Semiconductor optoelectronic devices such as diode lasers are formed on InP substrates with an active region with an InAsN or InGaAsN electron quantum well layer and a GaAsSb or InGaAsSb hole quantum well layer which form a type II quantum well. The active region may be incorporated in various devices ... 08/04/05 - 20050167648 - Variable semiconductor all-optical buffer using slow light based on electromagnetically induced transparency A variable semiconductor all-optical buffer and method of fabrication is provided where buffering is achieved by slowing down the optical signal using a control light source to vary the dispersion characteristic of the medium based on electromagnetically induced transparency (EIT). Photonic bandgap engineering in conjunction with strained quantum wells (QWs) ... 08/04/05 - 20050167647 - Thermal interface material and method for manufacturing same A thermal interface material (40) includes a macromolecular material (32), and a plurality of carbon nanotubes (22) embedded in the macromolecular material uniformly. The thermal interface material includes a first surface (42) and an opposite second surface (44). Each carbon nanotube is open at both ends thereof, and extends from ... 08/04/05 - 20050167646 - Nanosubstrate with conductive zone and method for its selective preparation The present invention provides novel nanostructure composed of at least one elongated structure element, an elongated structure element of said nanostructure bearing an electrically conductive zone selectively grown onto the elongated structure element. The present invention further provides a selective method for forming in a liquid medium, such nanostructures. ... 07/21/05 - 20050156153 - Quantum well structure and semiconductor device using it and production method of semiconductor element A semiconductor element excellent in luminous efficiency which sufficiently eliminates the effect of a piezo-electric field with the crystallinity of an active layer well retained. A quantum well active layer has a laminated structure in which a barrier layer undoped region ((In0.02Ga0.98N layer 702), a quantum well layer (undoped In0.02Ga0.8N ... 06/30/05 - 20050139819 - Process for fabricating nanoelectronic device by intermittent exposure A process for fabricating a nanoelectronic device by intermittent exposure is disclosed, consisting the steps of: providing a substrate on which a conductor or semiconductor thin film having a photoresist layer coated is formed; exposing the photoresist layer by lithography with a lithographic pattern which includes at least one noncontinuous ... 06/30/05 - 20050139818 - Gallium nitride semiconductor light emitting device and method of manufacturing the same Disclosed herein are a gallium nitride semiconductor LED (light emitting device) and a method of manufacturing the same, which reduces defects, such as Ga vacancies and dislocations caused by lattice mismatching, with Al doping, so that electrical and an optical properties are enhanced. The gallium nitride semiconductor LED comprises a ... 06/16/05 - 20050127352 - Light emitting diode A green LED has a substrate, a GaN heavily n-doped bottom confining layer, an active region, an upper GaN confinement layer, and a semi-transparent ohmic contact layer. The active region has less than or equal to three highly compressively strained quantum wells. The widths of the quantum wells is less ... 06/02/05 - 20050116216 - Optical semiconductor device with multiple quantum well structure An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers ... 06/02/05 - 20050116215 - Semiconductor light-emitting device The invention may be applied to a light-emitting diode (11) or to a laser diode. ... ### FreshPatents.com Support |