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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Thin Active Physical Layer Which Is (1) An Active Potential Well Layer Thin Enough To Establish Discrete Quantum Energy Levels Or (2) An Active Barrier Layer Thin Enough To Permit Quantum Mechanical Tunneling Or (3) An Active Layer Thin Enough To Permit Carrier Transmission With Substantially No Scattering (e.g., Superlattice Quantum Well, Or Ballistic Transport Device) > Heterojunction > Incoherent Light Emitter Incoherent Light EmitterIncoherent Light Emitter patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/31/08 - 20080023691 - Light emitting diode having vertical topology and method of making the same An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting ... 01/17/08 - 20080012003 - Quantum device, control method thereof and manufacturing method thereof A quantum dot (22) is formed on a GaAs substrate (20). In the quantum dot (22), a single electron exists. A cap layer (26) is formed on a surrounding area of the quantum dot (22), and a barrier layer (28) is formed thereon. A quantum dot (30) for detection is ... 01/03/08 - 20080001139 - Photonic devices monolithically integrated with cmos Photonic devices monolithically integrated with CMOS are disclosed, including sub-100nm CMOS, with active layers comprising acceleration regions, light emission and absorption layers, and optional energy filtering regions. Light emission or absorption is controlled by an applied voltage to deposited films on a pre-defined CMOS active area of a substrate, such ... 01/03/08 - 20080001138 - Nitride based semiconductor light-emitting device Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer ... 12/20/07 - 20070290190 - Adapted led device with re-emitting semiconductor construction An article includes an LED that has an emitting surface. A reemitting semiconductor structure has an emitting surface and converts light emitted by the LED to light of a different wavelength. At least one of the emitting surfaces frustrates total internal reflection. ... 12/13/07 - 20070284567 - Polarization recycling devices and methods Light-emitting devices and/or systems are described. In some embodiments, light-emitting devices and/or systems can recycle at least some light generated by a light-generating region of the light-emitting device. In one embodiment, a light-emitting device comprises a semiconductor light-emitting material stack including a light-generating region and a light emission surface, wherein ... 12/13/07 - 20070284564 - Gan-based semiconductor light-emitting device, light illuminator, image display planar light source device, and liquid crystal display assembly A GaN-based semiconductor light-emitting device includes (A) a first GaN-based compound semiconductor layer 13 having n-type conductivity, (B) an active layer 15 having a multi-quantum well structure including well layers and barrier layers for separating between the well layers, and (C) a second GaN-based compound semiconductor layer 17 having p-type ... 12/13/07 - 20070284563 - Light emitting device including rgb light emitting diodes and phosphor Disclosed herein is a light emitting device including at least three light emitting diodes having different peak emission wavelengths to primarily emit light in a blue, green or red wavelength range, and a wavelength-conversion means to convert primary light into secondary light in a visible light wavelength range, The light ... 12/06/07 - 20070278474 - Semiconductor light emitting element A semiconductor light emitting element includes an active layer of a quantum well structure, and an n-type semiconductor layer and a p-type semiconductor layer, formed to hold the active layer therebetween. The active layer includes at least a well layer containing InGaN, and at least two barrier layers formed to ... 11/01/07 - 20070252132 - Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles A radiation-emitting device includes a nanowire that is structurally and electrically coupled to a first electrode and a second electrode. The nanowire includes a double-heterostructure semiconductor device configured to emit electromagnetic radiation when a voltage is applied between the electrodes. A device includes a nanowire having an active longitudinal segment ... 10/11/07 - 20070235716 - Electrode An electrode is described. The electrode includes an electrode plate and a sensor circuit electrically connected to the electrode plate. The electrode can include a gimbaled contact element and a conductive flexure element connecting the electrode plate and the gimbaled contact element and providing a conductive path therebetween. In another ... 10/11/07 - 20070235715 - Semiconductor optical modulation device In a conventional EA/DFB laser, since the temperature dependence of the operation wavelength of the EA portion is substantially different from that of the DFB portion, the temperature range over which a stable operation is possible is small. In the case of using the EA/DFB laser as a light emission ... 10/04/07 - 20070228356 - Organic-inorganic composite semiconductor material, liquid material, organic light emitting element, method of manufacturing organic light emitting element, light emitting device and electronic apparatus where Ar1, Ar2 and Ar3 are each independently an aromatic ring group that optionally has a substituent group. ... 09/27/07 - 20070221908 - Semiconductor light emitter A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitute an active layer, wherein the barrier ... 08/16/07 - 20070187666 - Gallium nitride-based compound semiconductor light-emitting device An object of the present invention is to provide a gallium nitride compound semiconductor light-emitting device having excellent heat resistance, which device is resistive to an increase in the forward operation voltage (VF) caused by mild heating performed after formation of the light-emitting device (e.g., heating to about 300° C. ... 08/09/07 - 20070181868 - Silicon electrode plate for plasma etching with superior durability This silicon electrode plate for plasma etching is a silicon electrode plate for plasma etching with superior durability including silicon single crystal which, in terms of atomic ratio, contains 3 to 11 ppba of boron, and further contains a total of 0.5 to 6 ppba of either or both of ... 08/02/07 - 20070176161 - Light emitting device It is an object of the invention to provide a light emitting device which can display a superior image in which luminescent color from each light emitting layer is beautifully displayed and power consumption is lowered in a light emitting element in which light emitting layers are stacked. One feature ... 07/26/07 - 20070170415 - Semiconductor light emitting device The refractive index of the material for forming a light emitting element, example of the material including a group III Nitride Compound Semiconductor, is relatively higher than that of air; therefore, in order to emit, into air, light generated in an active layer in conventional semiconductor light emitting devices, it ... 07/19/07 - 20070164268 - Method and apparatus for providing a light source that combines different color leds A method for creating an improved signal light is disclosed. For example, the improved signal light includes a housing, one or more first type of light emitting diodes (LEDs) emitting a light energy having a first dominant wavelength deployed in the housing, one or more second type of LEDs emitting ... 07/12/07 - 20070158638 - Dual band photodetector A dual band photodetector for detecting infrared and ultraviolet optical signals is disclosed. Aspects include homojunction and heterojunction detectors comprised of one or more of GaN, AlGaN, and InGaN. In one aspect ultraviolet/infrared dual-band detector is disclosed that is configured to simultaneously detect UV and IR. ... 06/28/07 - 20070145350 - Display apparatus A display apparatus that includes: a plurality of light-emitting devices disposed on a substrate with an accumulation of, in this or inverse order, a light transmissive electrode layer, a functional layer including a light-emitting layer, and an opposing electrode layer; and a color conversion layer that is provided on a ... 06/28/07 - 20070145349 - Light emitting device A light emitting device includes a first light emitting diode (LED) emitting a first light emission of at least a first wavelength, and a second light emitting diode emitting a second light emission of at least a second wavelength. The second LED is placed in close proximity to the first ... 06/07/07 - 20070125997 - Light-controlling structure and display device employing the same Provided are a light-controlling structure having a simple structure and a short response time and a display device employing the structure, wherein the structure includes a first electrode; a second electrode which is disposed apart from the first electrode; at least one heat-emitting unit which is electrically connected to the ... 05/31/07 - 20070120109 - Surface light-source device using light-emitting elements A surface light-source device is composed of a light guide plate, luminescent panels and reflector sheets. The light guide plate is composed of three light guide units respectively formed in a rectangular plate-like shape having a rectangular light emission surface, a thick portion, a thin side portion, an incline rear ... 05/31/07 - 20070120108 - Light emitting device A light emitting device includes a laminate of a lower electrode layer, an organic light-emitting layer, and an upper transparent electrode layer. In the light emitting device, an auxiliary electrode layer is formed of colloidal nano-sized particles of a conductive metal between the lower electrode layer and the organic light-emitting ... 05/24/07 - 20070114515 - Nitride semiconductor device having a silver-base alloy electrode An LED is disclosed which comprises a nitride-made main semiconductor region formed on a substrate for generating light, and an electrode formed on the main semiconductor region to a thickness sufficiently small to transmit the light from the main semiconductor region. The electrode is made from a silver-base alloy, rather ... 05/24/07 - 20070114514 - Light emitting device A light emitting device includes: a light emitting element; and a substantially rectangular package body in which the light emitting element is contained and a concave portion is formed. The concave portion has a bottom surface on which the light emitting element is disposed, and is filled with a transparent ... 05/24/07 - 20070114513 - Semiconductor laser and method for manufacturing semiconductor laser A back-surface-electrode type semiconductor laser of GaN-based compound has low electric resistance and high light emitting efficiency, and includes negative electrodes made of Al having a contact surface that contacts with the n-type GaN substrate. The back-surface-electrode type semiconductor laser has GaN-based compound layers laminated on an n-type GaN substrate ... 05/24/07 - 20070114512 - Light emitting element and light emitting device using the same An object of the prevent invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light ... 05/24/07 - 20070114511 - Lll-nitride compound semiconductor light emiting device The present invention relates to a HI-nitride semiconductor light-emitting device having high external quantum efficiency, provides a HI-nitride compound semiconductor light-emitting device including an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen, an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is ... 05/17/07 - 20070108436 - Semiconductor light-emitting device and surface light source using the same A semiconductor light-emitting device can include high heat dissipation properties and a high degree of mounting flexibility. Also a surface light source can be configured to use the above-noted semiconductor light-emitting device. The semiconductor light-emitting element can be mounted on a package obtained by insert-molding lead frames with a resin. ... 05/10/07 - 20070102693 - Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device In an LED array chip (2), LEDs (6) are connected together in series by a bπ dging wire (30) The LEDs (6) each have a semiconductor multilayer structure (8-18) including a light emitting layer (14) Here, the semiconductor multilayer structure (8-18) is epitaxially grown on a front surface of an ... 05/10/07 - 20070102692 - Semiconductor light emitting device A semiconductor light emitting device includes a semiconductor light emitting portion, a front surface electrode provided on one side of the semiconductor light emitting portion, an electrically conductive substrate provided on the other side of the semiconductor light emitting portion, the electrically conductive substrate being transparent to a wavelength of ... 05/03/07 - 20070096077 - Nitride semiconductor device A nitride semiconductor device having excellent ESD tolerance, by preventing uneven distribution of the electric current in the p-side nitride semiconductor layer. The p-side nitride semiconductor layer (40) comprises, from the active layer (30) side, (a) a p-side wide band gap layer (12) containing a p-type impurity and (b) a ... 05/03/07 - 20070096076 - Light emitting device and method of manufacturing light emitting device A light emitting device includes: a light emitting layer; an n-type contact layer made of a compound provided on the light emitting layer; a composition modulation layer provided on the n-type contact layer; and a transparent electrode provided on the composition modulation layer. The composition modulation layer consists of a ... 04/26/07 - 20070090337 - Infrared sensor ic, and infrared sensor and manufacturing method thereof An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), ... 04/19/07 - 20070085070 - Lighting system An object of the present invention is to provide a lighting system which uses a stacked light emitting element provided with a plurality of light emitting units and causes little change in emission color even after being used for a long time. A lighting system is provided, which includes a ... 04/12/07 - 20070080338 - Infra-red light-emitting device The present infra-red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the ... 04/12/07 - 20070080337 - Radiation emitting component A radiation-emitting component (1) comprising a radiation source, a housing body (6), a radiation exit side (16), an underside (17) which is opposite the radiation exit side (16), a side surface (18) which connects the radiation exit side (16) and the underside (17), and at least one first contact region ... 04/05/07 - 20070075306 - Light emitting device A light emitting device having an emitting element and an element mounting portion on which the emitting element is mounted. The element mounting portion is formed of aluminum nitride. ... 04/05/07 - 20070075305 - Light emitting apparatus, method of manufacturing light emitting apparatus, and electronic apparatus A light emitting apparatus is provided. The light emitting apparatus has a plurality of unit devices including, on a substrate, a reflecting layer, a semi-transmitting semi-reflecting layer, a light emitting layer disposed between the light reflecting layer and the semi-reflecting layer, and a light transmitting pixel electrode disposed between the ... 03/15/07 - 20070057248 - Superlattice nano-device and method for making same A nanodevice (1) for a desired function includes a substrate (11), a one-dimensional nanostructure (12), a functional layer (20) having a desired function, a conductive thin film electrode (30), and an insulating layer (40). The one-dimensional nanostructure is operatively extends from the substrate. The functional layer is surrounds at least ... 03/08/07 - 20070051937 - Optical semiconductor devices on inp substrate Each specific layer, i.e., each ZnSe0.53Te0.47 layer (2ML) is inserted between host layers, i.e., Mg0.5Zn0.29Cd0.21Se layers (each having 10ML (atomic layer) thickness) each of which is lattice matched to an InP substrate. In this case, each specific layer in which a sufficient carrier concentration of 1×1018 cm−3 or more is ... 02/22/07 - 20070040162 - Highly efficient iii-nitride-based top emission type light emitting device having large area and high capacity and method of manufacturing the same Disclosed are a nitride-based top emission type light emitting device and a method of manufacturing the same. The light emitting device includes an n-nitride-based cladding layer, a p-nitride-based cladding layer, a nitride-based active layer, and a multiple p-ohmic contact layer. The multiple p-ohmic contact layer includes at least one pair ... 02/22/07 - 20070040161 - Light-emitting element and light-emitting device It is an object of the present invention to provide a light-emitting element having a layer containing a light-emitting material and a transparent conductive film between a pair of electrodes, in which electric erosion of the transparent conductive film and metal can be prevented, and also to provide a light-emitting ... 02/15/07 - 20070034857 - Nitride-based white light emitting device and manufacturing method thereof A light emitting device includes an n-type cladding layer. a p-type cladding layer. an active layer interposed between the n-type cladding layer and the p-type cladding layer and an ohmic contact layer contacting the p-type cladding layer or the n-type cladding layer. The ohmic contact layer includes a first film ... 02/15/07 - 20070034856 - Light emitting element, light emitting device and electronic device It is an object of the present invention to provide a light emitting element with improved luminous efficiency, a reduced drive voltage, and improved degree of deterioration with respect to driving time. According to a light emitting element including a first electrode; a second electrode; and a light emitting laminated ... 02/15/07 - 20070034855 - Nitride semiconductor light emitting device The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation ... 02/15/07 - 20070034854 - Organometallic complex, and light emitting element and electronic appliance using the same It is an object of the present invention to provide a substance which can emit red phosphorescence which is closer to the chromaticity coordinates of red according to the NTSC standard. The present invention provides an organometallic complex represented by the general formula (1), wherein each of R1 to R3 ... 02/15/07 - 20070034853 - Structures for reducing operating voltage in a semiconductor device A light-emitting device comprises an active region configured to generate light in response to injected charge, and an n-type material layer and a p-type material layer, wherein at least one of the n-type material layer and the p-type material layer is doped with at least two dopants, at least one ... 02/15/07 - 20070034852 - Mid-infrared resonant cavity light emitting diodes A Resonant Cavity Light Emitting Diode (RCLED) device having a first active region having one or more quantum wells disposed within, a first chamber and a second chamber coupled to the first active region and a first reflector and a second reflector coupled to the first and second chambers respectively ... 02/08/07 - 20070029540 - Semiconductor device A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal. ... 02/08/07 - 20070029539 - Light-emitting element array and display apparatus There is provided a light-emitting element array having a plurality of light-emitting elements of different emission colors each comprising a light extraction electrode, a reflecting electrode, and an organic layer disposed between the electrodes, said organic layer comprising a light-emitting layer and a carrier-transporting layer disposed between the light-emitting layer ... 12/21/06 - 20060284161 - Light source module and vehicle lamp A light source module is provided with a semiconductor light emitting element disposed in a hollow airtight region within a cover fixed to a circuit board, and electrodes which are disposed outside of the airtight region and supplies a current to the semiconductor light emitting element. The circuit board is ... 12/14/06 - 20060278864 - Light-emitting device A light-emitting device is equipped with a GaN substrate; an n-type AlxGa1-xN layer on a first main surface side of the GaN substrate; a p-type AlxGa1-xN layer positioned further away from the GaN substrate than the n-type AlxGa1-xN layer; and a multi-quantum well (MQW) positioned between the n-type AlxGa1-xN layer ... 11/23/06 - 20060261323 - Vertical nitride based semiconductor light emitting device having improved light extraction efficiency The invention provides a nitride semiconductor light emitting device. In the invention, a first conductivity-type nitride semiconductor layer is formed on a conductive substrate having light transmissibility. An active layer is formed on the first conductivity-type nitride semiconductor layer. Also, a second conductivity-type nitride semiconductor layer is formed on the ... 10/05/06 - 20060219999 - Group iii-nitride light emitting device The present invention provides a group III-nitride light emitting device improved in operating voltage and electrostatic discharge characteristics. The group III-nitride light emitting device comprises a lower n-type clad layer, a current spreading layer, an upper n-type clad layer, an active layer and an p-type clad layer formed in their ... 09/28/06 - 20060214152 - Light emitting device To provide a light emitting device in which generation of cross talk between adjacent light emitting elements is suppressed, even when the light emitting device uses a light emitting element having high current efficiency. Also, to provide a light emitting device having high display quality even when the light emitting ... 09/28/06 - 20060214151 - Light-emitting element and laser apparatus using the light-emitting element It is an object of the present invention to provide a light-emitting element in which an inverted distribution state can be formed by exciting an organic compound with current at low current density, and moreover to provide a laser oscillator of a current excitation type using an organic compound as ... 08/31/06 - 20060192194 - Electronic device contact structures Electronic device contact structures are disclosed. ... 07/27/06 - 20060163555 - Led and a lighting apparatus using the led Disclosed herein is a LED and a lighting apparatus, which employs a LED as a light source of low power and high efficiency for an optical projection system. The lighting apparatus comprises a reflection part together with the LED, and enhances light emitting directionality of the LED, thereby generating parallel ... 07/20/06 - 20060157684 - Thin film multilayer with nanolayers addressable from the macroscale A thin film multilayer device having a multilayer stack formation including an array of electrically conductive or optically transmissive nanolayers separated by insulating layers. The nanolayers have one end with nanometer size and spacing, and another end with macro-sized tab sections through which the array of nanolayers may be individually ... 06/29/06 - 20060138396 - Quantum-dot infrared photodetector A quantum-dot infrared photodetector comprises a semiconductor substrate; a buffer layer formed on the semiconductor substrate; an undoped first obstructing layer formed on the buffer layer; a first quantum-dot layer formed on the first barrier layer; a heavily doped first contact layer formed on the first quantum-dot layer; a second ... 06/15/06 - 20060124917 - Adapting short-wavelength led's for polychromatic, broadband, or white emission An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The ... 06/08/06 - 20060118775 - Headlamp An automotive headlamp is equipped with a light source containing one or more light-emitting devices (LEDs) and a base member (a pedestal and rear case) for securing the light source to the automobile. The LED includes: a GaN substrate 1; a n-type AlxGa1-xN layer 3 on a first main surface ... 05/25/06 - 20060108574 - Optoelectronic transmitter integrated circuit and method of fabricating the same using selective growth process Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA ... 05/11/06 - 20060097242 - Semiconductor light-emitting device The present invention provides a semiconductor light-emitting device which exhibits small threshold current, high differential efficiency and good characteristics, by reducing electrons that overflow an electron barrier for trapping the electrons in an active layer. Of barrier layers that configure an active layer 20, a final barrier layer 1, which ... 04/27/06 - 20060086932 - Nitride based semiconductor device The present invention provides a nitride based semiconductor device comprising an active layer having a quantum well layer and a quantum barrier layer, wherein the device includes an electron emitting layer formed of at least two repeats of a first nitride semiconductor layer and a second nitride semiconductor layer having ... 04/20/06 - 20060081833 - Package structure of light-emitting device A package structure of light-emitting device comprises a substrate. Two lines are formed on the substrate. An insulating layer is formed between two lines. A plurality of light-emitting sources are formed on the substrate for generating the light. Each light-emitting source has a positive electrode and a negative electrode. A ... 04/20/06 - 20060081832 - Light-emitting element with porous light-emitting layers The invention relates to a light-emitting element with porous light-emitting layers. The light-emitting element comprises: a substrate, a first conductive cladding layer, a second conductive cladding layer and at least one porous light-emitting layer. The porous light-emitting layer is formed between the first conductive cladding layer and the second conductive ... 04/13/06 - 20060076550 - Light emitting display and light emitting display panel A display device according to an embodiment of the present invention includes a pixel driver, first, second, and third light emitting diodes, and first, second, and third switches. The pixel driver outputs a driving current corresponding to a data signal to an output terminal in response to the scan signal. ... 03/30/06 - 20060065886 - Semiconductor apparatus for white light generation and amplification The present invention is a semiconductor apparatus for white light generation and amplification, where, under different current bias, white light can be generated steadily and evenly by folding up multi-wavelength quantum wells and by side-injecting a current. And, the white light can be excited out electronically without mingling with a ... 03/23/06 - 20060060833 - Radiation-emitting optoelectronic component with a quantum well structure and method for producing it A radiation-emitting optoelectronic component with an active zone having a quantum well structure (5) containing at least one first nitride compound semiconductor material. The quantum well structure (5) is grown on at least one side facet (9) of a nonplanar structure (4) containing at least one second nitride compound semiconductor ... 02/23/06 - 20060038166 - Nitride semiconductor light emitting device A first region and a second region that has a defect density of which the value is higher than that of the first region are respectively formed so as to be aligned in stripe form in the direction parallel to the direction in which a dug out region extends, where ... 12/22/05 - 20050279990 - High brightness light-emitting device and manufacturing process of the light-emitting device A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent passivation layer laid over an outmost surface of the multi-layer stack, a reflector layer laid over the passivation layer, and a plurality ... 12/22/05 - 20050279989 - Broadband light emitting device The invention concerns a superluminescent light emitting diode (SLED) comprising a semiconductor heterostructure forming a PN junction and a waveguide. The semiconductor heterostructure includes a gain region with a contact means for biasing the PN junction so as to produce light emission including stimulated emission from an active zone of ... 12/08/05 - 20050269560 - Illuminating device and liquid crystal display device A white light having a less light of a wavelength except wavelength bands showing red, green and blue colors and a sufficient amount of light is emitted to illuminate a liquid crystal panel. The present invention provides an illuminating device which generates a white light by mixing a light of ... 11/17/05 - 20050253131 - Method for manufacturing organic el device, organic el device, and electronic apparatus The present invention provides reduced production cost in a method for manufacturing an organic EL device including a step of forming a light-emitting layer having a predetermined pattern by an ink-jet method. The method achieves this objective by not forming a bank which surrounds an area in a substrate surface ... 11/17/05 - 20050253130 - Light source module and vehicle front lamp A light source module for generating light, including a semiconductor light-emitting element, nano-particles having a diameter smaller than half the wavelength of light generated by the light source module, a fluorescent substance for generating visible light in accordance with light generated by the semiconductor light-emitting element, and a binder formed ... 11/17/05 - 20050253129 - Light emitting diode with enhanced luminance and method for manufacturing the same A light emitting diode with enhanced luminance and a method for manufacturing the light emitting diode are provided. The light emitting diode includes a substrate, a passivation layer including a material selected from a group consisting of a metal alloy, a metal oxide, a metal nitride, organic materials, inorganic materials ... 11/10/05 - 20050247924 - Sequentially charged nanocrystal light emitting device A light emitting device including a transistor structure formed on a semiconductor substrate. The transistor structure having a source region, a drain region, a channel region between the source and drain regions, and a gate oxide on the channel region. The light emitting device including a plurality of nanocrystals embedded ... 10/20/05 - 20050230673 - Colloidal quantum dot light emitting diodes The present invention is directed to light emitting devices including a first layer of a semiconductor material from the group of a p-type semiconductor and a n-type semiconductor, a layer of colloidal nanocrystals on the first layer of a semiconductor material, and, a second layer of a semiconductor material from ... 10/13/05 - 20050224780 - Nanowire light emitting device A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the ... 10/06/05 - 20050218396 - Display device In a light emitting device using a light emitting element, the invention provides a sealing structure capable of preventing ingress of moisture from the outside and obtaining adequate reliability. The light emitting device has a light emitting element comprising a light emitting layer formed between a first electrode and a ... 09/08/05 - 20050194584 - Led fabrication via ion implant isolation A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the ... 09/01/05 - 20050189533 - Headlamp In a casing of a headlamp, a substrate portion to which a light-emitting diode as a light source is mounted, and a battery case accommodating a battery for providing necessary power to the light-emitting diode are provided. The substrate portion is spaced apart from a partition disposed on the front ... 08/18/05 - 20050179025 - Image display unit Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, ... 08/11/05 - 20050173693 - Light-emitting device, method of manufacturing the same, and electronic apparatus The invention enhances or optimizes chromaticity of light in a light-emitting device that includes light-emitting layers. A light-emitting device includes light-emitting layers and electrode layers. The light extracted from the light-emitting device includes the light, which is incident from the light-emitting layers to the electrode layers. The film thicknesses of ... 08/11/05 - 20050173692 - Vertical gan light emitting diode and method for manufacturing the same Disclosed are a vertical GaN light emitting diode and a method for manufacturing the same. The vertical GaN light emitting diode comprises a first conductive GaN clad layer with an upper surface provided with a first contact formed thereon, an active layer formed on a lower surface of the first ... 07/28/05 - 20050161661 - Semiconductor light emitting device Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have ... 07/28/05 - 20050161660 - Photon source and a method of fabricating a photon source A photon source comprising a quantum dot layer having a plurality of quantum dots with an n-modal distribution in emission wavelength, said n-modal distribution in emission wavelength comprising n peaks in a plot of dot density as a function of emission wavelength where n is an integer of at least ... 07/21/05 - 20050156152 - Flat panel display using silicon light-emitting device A flat panel display is provided. The flat panel display includes a silicon light-emitting device panel having a two-dimensional array of silicon light-emitting devices formed on an n- or p-type silicon-based substrate, and a fluorescent layer formed on the front surface of the silicon light-emitting device panel and emitting visible ... 07/14/05 - 20050151125 - Light emitting devices Light-emitting devices, and related components, systems and methods are disclosed. ... 06/23/05 - 20050133780 - Quantum-state-generating apparatus, bell measurement apparatus, quantum gate apparatus, and method for evaluating fidelity of quantum gate An apparatus for generating a quantum state of a two-qubit system including two qubits, each qubit being represented by a particle which invariably travels through one of two paths, includes a quantum gate composed of an interferometer for implementing an-interaction-free measurement. The apparatus receives two particles having no correlation and ... 06/09/05 - 20050121662 - Surface emitting device, manufacturing method thereof and projection display device using the same There are provided a surface emitting device and a projection display device, in which high power output can be produced by configuring a large-scaled LED. The surface emitting device includes a plurality of stacked light emitting elements provided on one module. Each of the stacked light emitting elements includes n-type ... ### FreshPatents.com Support |